Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very high frequency plasma enhanced chemical vapor deposition using fluorinated source gas
著者
和文:
K. Nakahata,
T. Kamiya,
C.M. Fortmann,
I. Shimizu,
H. Stuchlíková,
A.Fejfar,
J. Koèka.
英文:
K. Nakahata,
T. Kamiya,
C.M. Fortmann,
I. Shimizu,
H. Stuchlíková,
A.Fejfar,
J. Koèka.