The paper presents a novel preparation technique for Si- and Gebased
half-metallic full-Heusler alloy thin films, utilizing siliconon-
insulator (SOI) and germanium-on-insulator (GOI) substrates,
respectively. Full-Heusler Co2FeSi (Co2FeGe) alloy thin films
were successfully formed by thermally activated silicidation
(germanidation) reaction between an ultra-thin SOI (GOI) layer
and Co/Fe layers deposited on it. This technique can easily
produce fully ordered L21 structure that is necessary for the halfmetallicity
of full-Heusler alloys. The proposed technique is
compatible with metal source/drain formation process in advanced
CMOS technology and would be applicable to the fabrication of
the half-metallic source/drain of MOSFET type of spin transistors.
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