The authors developed a preparation technique of Co2FeSi full-Heusler alloy thin films with the
L21-ordered structure on silicon-on-insulator SOI substrates, employing rapid thermal annealing
RTA. The Co2FeSi full-Heusler alloy films were successfully formed by RTA-induced silicidation
reaction between an ultrathin SOI 001 layer and Fe/Co layers deposited on it. The highly
110-oriented L21-phase polycrystalline full-Heusler alloy films were obtained at the RTA
temperature of 700 °C. Crystallographic and magnetic properties of the RTA-formed full-Heusler
alloy films were qualitatively the same as those of bulk full-Heusler alloy. The proposed technique
is compatible with metal source/drain formation process in advanced complementary metal-oxide
semiconductor technology and would be applicable to the fabrication of the half-metallic source/
drain of metal-oxide-semiconductor field-effect transistor type of spin transistors.
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