The 32nd Electronics Division Meeting of the Ceramic Society of Japan
開催地
和文:
東京
英文:
アブストラクト
Electrical properties of epitaxially grown yttria stabilized zirconia(YSZ) thin films on <100> Si substrate were measured. YSZ thin film with 100nm thickness was deposited by PLD. Si substrate was partially etched with 400μm in diameter by reactive ion etching apparatus. The apparent activation energy determined by AC impedance measurement showed lower value than that of measured without etching.