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和文:Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors 
英文:Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors 
著者
和文: Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, Rena Suzuki, Sunghoon Lee, Ryo Iida, Takuya Hoshii, Wipakorn Jevasuwan, Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi.  
英文: Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, Rena Suzuki, Sunghoon Lee, Ryo Iida, Takuya Hoshii, Wipakorn Jevasuwan, Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi.  
言語 English 
掲載誌/書名
和文:Applied Physics Letters 
英文:Applied Physics Letters 
巻, 号, ページ Vol. 103    No. 14    pp. 143509
出版年月 2013年 
出版者
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英文: 
会議名称
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英文: 
開催地
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英文: 
公式リンク http://scitation.aip.org/content/aip/journal/apl/103/14/10.1063/1.4824474
 
DOI https://doi.org/10.1063/1.4824474
アブストラクト Combining the split capacitance-voltage method with Hall measurements revealed the existence of interface traps within the conduction band (CB) of InGaAs in metal-oxide-semiconductor (MOS) structures with Al2O3 (or HfO2)/InGaAs interfaces. The impact of these interface traps on inversion-layer mobilities in InGaAs MOS field-effect transistors with various interface structures was investigated. We found that the interface traps (>1013 cm竏� eV竏�) induce Fermi level pining at an energy level 0.21窶�.35 eV above the CB minimum, which degrades the mobilities in the high inversion carrier concentration region. Furthermore, the energy levels are tunable by changing the interface structures.

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