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タイトル
和文: 
英文:Enhanced electron-phonon coupling for a semiconductor charge qubit in a surface phonon cavity 
著者
和文: CHEN Jun, 佐藤 裕也, 小坂 玲雄, 橋坂 昌幸, 村木 康二, 藤澤 利正.  
英文: J. C. H. Chen, Y. Sato, R. Kosaka, M. Hashisaka, K. Muraki, T. Fujisawa.  
言語 English 
掲載誌/書名
和文: 
英文:Scientific Reports 
巻, 号, ページ vol. 5        p. 15176
出版年月 2015年10月15日 
出版者
和文: 
英文:Nature publishing group 
会議名称
和文: 
英文: 
開催地
和文: 
英文: 
DOI https://doi.org/10.1038/srep15176
アブストラクト Electron-phonon coupling is a major decoherence mechanism, which often causes scattering and energy dissipation in semiconductor electronic systems. However, this electron-phonon coupling may be used in a positive way for reaching the strong or ultra-strong coupling regime in an acoustic version of the cavity quantum electrodynamic system. Here we propose and demonstrate a phonon cavity for surface acoustic waves, which is made of periodic metal fingers that constitute Bragg reflectors on a GaAs/AlGaAs heterostructure. Phonon band gap and cavity phonon modes are identified by frequency, time and spatially resolved measurements of the piezoelectric potential. Tunneling spectroscopy on a double quantum dot indicates the enhancement of phonon assisted transitions in a charge qubit. This encourages studying of acoustic cavity quantum electrodynamics with surface phonons.

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