Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

論文・著書情報

タイトル

和文:
英文:	Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

著者

和文:	星井拓也, 菅原聡, Takagi Shin-ichi.
英文:	Hoshii Takuya, SATOSHI SUGAHARA, Takagi Shin-ichi.

言語

English

掲載誌/書名

和文:
英文:	Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers

巻, 号, ページ

Vol. 46 No. 4 pp. 2122-2126

出版年月

2007年4月

出版者

和文:
英文:	Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

会議名称

和文:
英文:

開催地

和文:
英文: