"Si-Meng Chen,Sung Lin Tsai,Kazuto Mizutani,Takuya Hoshii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Edward Yi Chang,Kuniyuki KAKUSHIMA","GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation",,"Japanese Journal of Applied Physics",,"Volume 61",,,2022,June
"Si-Meng Chen,Sung-Lin Tsai,Kazuto Mizutani,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation","International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.