"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Makoto Hagiwara,Takahiro Urakabe,Shigeki Harada","Automated Flexible Modeling for Various Full-SiC Power Modules",,"IEEE Transactions on Power Electronics","IEEE","Vol. 38","Issue 5","pp. 6094-6107",2023,May
"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Kenji Hatori,Ryo Tsuda,Hitoshi Uemura,Makoto Hagiwara,Takahiro Urakabe","Investigation of Full SiC Power Modules for More Electric Aircraft with Focus on FIT Rate and High Frequency Switching",,"IEEE Transactions on Industry Applications","IEEE","Vol. 58","No. 3","pp. 2978-2986",2022,May
"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Kenji Hatori,Ryo Tsuda,Hitoshi Uemura,Makoto Hagiwara,Takahiro Urakabe","Investigation of Full SiC Power Modules for More Electric Aircraft with Focus on FIT Rate and High Frequency Switching","2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia)",,,,,,2021,July
"牛島和樹,葛本昌樹,萩原誠,滕飛,石井佑季,中嶋純一,堀口剛司,椋木康滋,地道拓志","6.5 kV耐圧SiC-MOSFETのデバイスモデルを用いた並列駆動動作に関する一検討","電気学会研究会資料. SPC, 半導体電力変換研究会",,,,,"  SPC-20-048",2020,Jan.
"滕飛,葛本昌樹,萩原誠,石井佑季,中嶋純一,堀口剛司,椋木康滋,地道拓志","6.5kV耐圧SiC-MOSFETのデバイスモデル開発","電気学会研究会資料. SPC, 半導体電力変換研究会",,,,,"  SPC-19-068",2019,Oct.
"Yasushige Mukunoki,Takeshi Horiguchi,Hiroshi Nakatake,Masaki Kuzumoto,Makoto Hagiwara,Hirofumi Akagi","Physical Analysis of Gate-Source Voltage Dependencies of Parasitic Capacitors, and Their Impacts on Switching Behavior of a Discrete Silicon-Carbide MOSFET","2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)",,"IEEE",,,,2019,May
"滕飛,葛本昌樹,萩原誠,石井佑季,中嶋純一,椋木康滋,堀口剛司","6.5kV耐圧SiC-MOSFETの出力特性モデリング","平成31年電気学会全国大会",,,,"  4-013","pp. 20-21",2019,Mar.
"Y. Mukunoki,K. Konno,T. Horiguchi,A. Nishizawa,M. Kuzumoto,M. Hagiwara,H. Akagi","An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation",,"IEEE Transactions on Power Electronics",,"Vol. 33","No. 11","pp. 9834-9842",2018,Nov.
"椋木康滋,堀口剛司,葛本昌樹,萩原誠,赤木泰文","SiC-MOSFETデバイスモデルの開発","平成30年電気学会産業応用部門大会",,,,"  7-1","pp. VII-1",2018,Aug.
"椋木康滋","SiC-MOSFETデバイスモデルの開発と高精度回路解析への適用に関する研究",,,,,,,2018,June
"椋木康滋","SiC-MOSFETデバイスモデルの開発と高精度回路解析への適用に関する研究",,,,,,,2018,June
"椋木康滋","SiC-MOSFETデバイスモデルの開発と高精度回路解析への適用に関する研究",,,,,,,2018,June
"椋木康滋","SiC-MOSFETデバイスモデルの開発と高精度回路解析への適用に関する研究",,,,,,,2018,June
"松尾翼,昆野賢太郎,葛本昌樹,萩原誠,赤木泰文,椋木康滋,堀口剛司,中武浩","SiC-MOSFETデバイスモデルによる高周波漏洩電流の解析","平成30年電気学会全国大会",,,,"  4-112","pp. 181-182",2018,Mar.
"松尾翼,昆野賢太郎,葛本昌樹,萩原誠,赤木泰文,椋木康滋,堀口剛司,中山靖","双方向絶縁形DC-DCコンバータにおけるSiC-MOSFETのソフトスイッチング特性解析","平成29年電気学会産業応用部門大会",,,,"  1-134","pp. I-585-I-586",2017,Aug.