"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Makoto Hagiwara,Takahiro Urakabe,Shigeki Harada","Automated Flexible Modeling for Various Full-SiC Power Modules",,"IEEE Transactions on Power Electronics","IEEE","Vol. 38","Issue 5","pp. 6094-6107",2023,May
"中嶋純一","電力変換器設計の効率化に向けたパラメトリックスタディに関する研究",,,,,,,2023,Mar.
"中嶋純一","電力変換器設計の効率化に向けたパラメトリックスタディに関する研究",,,,,,,2023,Mar.
"中嶋純一","電力変換器設計の効率化に向けたパラメトリックスタディに関する研究",,,,,,,2023,Mar.
"石井一輝,浦壁隆浩,萩原誠,中嶋純一,檜垣優介,地道拓志","ゲート磁気結合トランスとコンデンサを併用したSiC-MOSFET/SiC-SBDスイッチング素子の直列駆動に関する研究","2022年電気学会産業応用部門大会",,,,"  1-40","pp. I-183-I-186",2022,Aug.
"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Kenji Hatori,Ryo Tsuda,Hitoshi Uemura,Makoto Hagiwara,Takahiro Urakabe","Investigation of Full SiC Power Modules for More Electric Aircraft with Focus on FIT Rate and High Frequency Switching",,"IEEE Transactions on Industry Applications","IEEE","Vol. 58","No. 3","pp. 2978-2986",2022,May
"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Kenji Hatori,Ryo Tsuda,Hitoshi Uemura,Makoto Hagiwara,Takahiro Urakabe","Investigation of Full SiC Power Modules for More Electric Aircraft with Focus on FIT Rate and High Frequency Switching","2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia)",,,,,,2021,July
"中嶋純一,堀口剛司,浦壁隆浩,萩原誠","SiC-MOSFET, GaN-HEMTに適用可能なユニバーサルデバイスモデルの開発","令和3年電気学会全国大会",,,,"  4-001","pp. 1-2",2021,Mar.
"牛島和樹,葛本昌樹,萩原誠,滕飛,石井佑季,中嶋純一,堀口剛司,椋木康滋,地道拓志","6.5 kV耐圧SiC-MOSFETのデバイスモデルを用いた並列駆動動作に関する一検討","電気学会研究会資料. SPC, 半導体電力変換研究会",,,,,"  SPC-20-048",2020,Jan.
"滕飛,葛本昌樹,萩原誠,石井佑季,中嶋純一,堀口剛司,椋木康滋,地道拓志","6.5kV耐圧SiC-MOSFETのデバイスモデル開発","電気学会研究会資料. SPC, 半導体電力変換研究会",,,,,"  SPC-19-068",2019,Oct.
"滕飛,葛本昌樹,萩原誠,石井佑季,中嶋純一,椋木康滋,堀口剛司","6.5kV耐圧SiC-MOSFETの出力特性モデリング","平成31年電気学会全国大会",,,,"  4-013","pp. 20-21",2019,Mar.