"T. Saraya,K. Itou,T. Takakura,M. Fukui,S. Suzuki,K. Takeuchi,M. Tsukuda,Y. Numasawa,K. Satoh,T. Matsudai,W. Saito,K. Kakushima,T. Hoshii,K. Furukawa,M. Watanabe,N. Shigyo,K. Tsutsui,H. Iwai,A. Ogura,S. Nishizawa,I. Omura,H. Ohashi,T. Hiramoto","Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss","International Electron Devices Meeting (IEDM2018)",,,,,,2018,Dec.