"Šâ�è�F”V,�¯–ì—Y“l,“s’z�N•½,‰Á“¡’ˆŒõ,–q–ì�r�°,�¬‘q�­•F,’|“à‘å•ã,‘å‹ø�G�¢,ŽR�è‘�,”g‘½–ì–rŽq","ƒ_ƒCƒ„ƒ‚ƒ“ƒh�Ú�‡Œ^“dŠEŒø‰Êƒgƒ‰ƒ“ƒWƒXƒ^‚Ì�‚‰·�E�‚“dˆ³“Á�«","‘æ27‰ñƒ_ƒCƒ„ƒ‚ƒ“ƒhƒVƒ“ƒ|ƒWƒEƒ€",,,,,,2013,Nov.
"K.Sato,T.Iwasaki,Y.Hoshino,H.Kato,T.Makino,M.Ogura,S.Yamasaki,S.Nakamura,K.Ichikawa,A.Sawabe,M.Hatano","Analysis of Selective Growth of n-Type Diamond in Lateral pn Junction Diodes","2013 JSAP-MRS Joint Symposia",,,,,,2013,Sept.
"T. Iwasaki,Y.Hoshino,K.Tsuzuki,H.Kato,T.Makino,M.Ogura,D.Takechi,H.Okushi,S.Yamazaki,M.Hatano","High Temperature Performance of Diamond Junction Field Effect Transistors","JSAP-MRS Joint Symposia",,,,,,2013,Sept.
"Takayuki Iwasaki,Yuto Hoshino,KoheiTsuzuki,Hiomitsu Kato,Toshiharu Makino,Masahiko Ogura,Daisuke Takeuchi,Hideyo Okushi,SatoshiYamasaki,Mutsuko Hatano","High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions",,"IEEE Electron Device Lett",,"Vol. 34",,"pp. 1175-1177",2013,Aug.
"�²“¡ˆêŽ÷,Šâ�è�F”V,�¯–ì—Y“l,‰Á“¡’ˆŒõ,–q–ì�r�°,�¬‘q�­•F,’|“à‘å•ã,‘å‹ø�G�¢,ŽR�è‘�,”g‘½–ì–rŽq","ƒ_ƒCƒ„ƒ‚ƒ“ƒh‰¡Œ^�Ú�‡ƒfƒoƒCƒX‚̑ψ³•]‰¿","‘æ60‰ñ‰ž—p•¨—�Šw‰ï�t‹GŠw�p�u‰‰‰ï",,,,,,2013,Mar.
"�¯–ì—Y“l,Šâ�è�F”V,“s’z�N•½,‰Á“¡’ˆŒõ,–q–ì�r�°,�¬‘q�­•F,’|“à‘å•ã,‘å‹ø�G�¢,ŽR�è‘�,”g‘½–ì–rŽq","ƒ_ƒCƒ„ƒ‚ƒ“ƒh‰¡Œ^�Ú�‡FET‚̉·“x“Á�«","‘æ60‰ñ‰ž—p•¨—�Šw‰ï�t‹GŠw�p�u‰‰‰ï",,,,,,2013,Mar.
"K. Tsuzuki,T. Iwasaki,Y. Hoshino,H. Kato,T. Makino,M. Ogura,D. Takeuchi,S. Yamasaki,M. Hatano","Diamond JFET Fabricated by Selectively Grown n+ Diamond Gates","IEEE EDS WIMNACT-37, Future Trend of Nanodevices and Photonics",,,,,,2013,Feb.
"�¯–ì—Y“l,“s’z�N•½,‰Á“¡’ˆŒõ,–q–ì�r�°,�¬‘q�­•F,Šâ�è�F”V,’|“à‘å•ã,‘å‹ø�G�¢,ŽR�è‘�,”g‘½–ì–rŽq","n+‘I‘ð�¬’·‚ð—˜—p‚µ‚½ƒ_ƒCƒ„ƒ‚ƒ“ƒh�Ú�‡Œ^“dŠEŒø‰Êƒgƒ‰ƒ“ƒWƒXƒ^‚ÌŽŽ�ì‚ƃfƒoƒCƒX“Á�«‚̉ð�Í","‘æ26‰ñƒ_ƒCƒ„ƒ‚ƒ“ƒhƒVƒ“ƒ|ƒWƒEƒ€",,,,,,2012,Nov.
"Takayuki Iwasaki,Yuto Hoshino,Kouhei Tsuzuki,Hiromitsu Kato,Toshiharu Makino,Masahiko Ogura,Daisuke Takeuchi,Tsubasa Matsumoto,Hideyo Okushi,Satoshi Yamasaki,Mutsuko Hatano","Diamond Junction Field-Effect Transistors with Slectively Grown n+-Side Gates",,"Appl. Phys. Express",,"  5","  091301",,2012,Sept.
"Yuto Hoshino,H. Kato,T.Makino,M. Ogura,Takayuki Iwasaki,Mutsuko Hatano,S. Yamasaki","Electrical properties of lateral p-n junction diodes fabricated by selective growth of n+ diamond",,"PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE",,"  209","  9","  1761-1764",2012,Sept.
"“s’z�N•½,‰Á“¡’ˆŒõ,–q–ì�r�°,�¬‘q�­•F,’|“à‘å•ã,‘å‹ø�G�¢,�¯–ì—Y“l,Šâ�è�F”V,ŽR�è‘�,”g‘½–ì–rŽq","nŒ^ƒ_ƒCƒ„ƒ‚ƒ“ƒh”¼“±‘Ì‚Ì‘I‘ð�¬’·–@‚ð—p‚¢‚½‰¡Œ^�Ú�‡FET","‘æ73‰ñ�H‹G‰ž—p•¨—�Šw‰ïŠw�p�u‰‰‰ï",,,,,,2012,Sept.
"“s’z �N•½,‰Á“¡’ˆŒõ,–q–ì�r�°,�¬‘q�­•F,�¯–ì—Y“l,Šâ�è�F”V,ŽR�è‘�,”g‘½–ì–rŽq","nŒ^ƒ_ƒCƒ„ƒ‚ƒ“ƒh”¼“±‘Ì‚Ì‘I‘ð�¬’·‚ð“K—p‚µ‚½‰¡Œ^p-nƒ_ƒCƒI�[ƒh","‘æ59‰ñ‰ž—p•¨—�ŠwŠÖŒW˜A�‡�u‰‰‰ï",,,,,,2012,Mar.
"Yuto Hoshino,H.Kato,T. Makino,M.Ogura,Takayuki Iwasaki,Mutsuko Hatano,S. Yamasaki","Electrical Properties of Lateral p-n Junction Diode Fabricated by Selective Growth of n+ Diamond","Hasselt Diamond Workshop 2012, 17th SBDD",,,,,,2012,
"Takayuki Iwasaki,Yuto Hoshino,Kouhei Tsuzuki,H. Kato,T. Makino,M. Ogura,D. Takeuchi,T. Matsumoto,H. Okushi,S. Yamasaki,Mutsuko Hatano","Diamond Semiconductor JFETs by Selectively Grown n+-Diamond Side Gates for Next Generation Power Devices","2012 IEEE International Electron Devices Meeting (IEDM)(2012)",,,,,,2012,
"Takayuki Iwasaki,Yuto Hoshino,H. Kato,T. Makino,M. Ogura,D. Takeuchi,T. Matsumoto,S. Yamasaki,Mutsuko Hatano","Diamond Junction Field Effect Transistors with Selectively Grown n+ Gates","International Conference on Diamond and Carbon Materials (2012)",,,,,,2012,
"Yuto Hoshino,Takayuki Iwasaki,Kouhei Tsuzuki,H. Kato,T. Makino,M. Ogura,D. Takeuchi,T. Matsumoto,S. Yamasaki,Mutsuko Hatano","Diamond Lateral p-n Diodes and JFETs by Selective Growth of n+ Diamond","2012 International Conference on Solid State Devices and Materials(SSDM 2012)",,,,,,2012,