"Tomoyuki Kurihara,Yohei Nagahama,Daisuke Kobayshi,Hiroki Niikura,Yoshishige Tsuchiya,Hiroshi Mizuta,Hiroshi Nohira,Ken Uchida,Shunri Oda","Engineering of Heterostructured Tunnel Barrier for Non-Volatile Memory Applications: Potential of Pr-based Heterostructured Barrier as a Tunneling Oxide","IEEE Silicon Nanoelectronics Workshop",,,,,,2009,June
"Y.  Takamura,A. Nishijima,Y. Nagahama,R. Nakane,S. Sugahara","Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors",,"ECS Trans.","The Electrochemical Society","vol. 16","no. 10","pp. 945-952",2008,Oct.
"Y. Takamura,Y. Nagahama,A. Nishijima,R. Nakane,S. Sugahara","Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors",,"Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME2008)",,,"  session E15-E23","  paper 2480",2008,Oct.
"Y. Takamura,A. Nishijima,Y. Nagahama,R. Nakane,S. Sugahara","Fabrication Technique of Si- and Ge-based Full-Heusler Alloys for Half-metallic Source/Drain Spin MOSFETs","The 4th Intl. Nanotechnology Conf. on Communication and Cooperation (INC4)","The 4th Intl. Nanotechnology Conf. on Communication and Cooperation (INC4)",,,,"  paper P-19",2008,Apr.
"高村陽太,長浜陽平,西島輝,中根了昌,宗片比呂夫,菅原聡","RTAを用いて作製したフルホイスラー合金Co2FeSi、Co2FeGeの構造","第55回応用物理学会関連連合講演会",,,"  28a-F-4",,,2008,Mar.
"高村陽太,西島輝,長浜陽平,中根了昌,宗片比呂夫,菅原聡","Rapid Thermal Annealingを用いたフルホイスラー合金の作製と評価","第12回半導体スピン工学の基礎と応用 (PASPS-12)",,,,,"  P6",2007,Dec.
"高村陽太,長浜陽平,中根了昌,宗片比呂夫,菅原聡","RTAを用いた非晶質絶縁膜上へのホイスラー合金の形成とその評価","第68回応用物理学会学術講演会","第68回応用物理学会学術講演会",,"  5a-S-1",,,2007,Sept.