"‹�“‡˜aŽ÷,Š‹–{�¹Ž÷,”‹Œ´�½,Ÿì”ò,�Έä—C‹G,’†“ˆ�ƒˆê,–xŒû�„Ži,–¸–Ø�NŽ ,’n“¹‘ñŽu","6.5 kV‘ψ³SiC-MOSFET‚̃fƒoƒCƒXƒ‚ƒfƒ‹‚ð—p‚¢‚½•À—ñ‹ì“®“®�ì‚ÉŠÖ‚·‚éˆêŒŸ“¢","“d‹CŠw‰ïŒ¤‹†‰ïŽ‘—¿. SPC, ”¼“±‘Ì“d—Í•ÏŠ·Œ¤‹†‰ï",,,,,"  SPC-20-048",2020,Jan.
"Ÿì”ò,Š‹–{�¹Ž÷,”‹Œ´�½,�Έä—C‹G,’†“ˆ�ƒˆê,–xŒû�„Ži,–¸–Ø�NŽ ,’n“¹‘ñŽu","6.5kV‘ψ³SiC-MOSFET‚̃fƒoƒCƒXƒ‚ƒfƒ‹ŠJ”­","“d‹CŠw‰ïŒ¤‹†‰ïŽ‘—¿. SPC, ”¼“±‘Ì“d—Í•ÏŠ·Œ¤‹†‰ï",,,,,"  SPC-19-068",2019,Oct.
"Ÿì”ò,Š‹–{�¹Ž÷,”‹Œ´�½,�Έä—C‹G,’†“ˆ�ƒˆê,–¸–Ø�NŽ ,–xŒû�„Ži","6.5kV‘ψ³SiC-MOSFET‚Ì�o—Í“Á�«ƒ‚ƒfƒŠƒ“ƒO","•½�¬31”N“d‹CŠw‰ï‘S�‘‘å‰ï",,,,"  4-013","pp. 20-21",2019,Mar.
"�Έä—C‹G,“¡“c‰p–¾","ƒ]?�[?ƒ“?ƒR?ƒ“?ƒg?ƒ�?�[?ƒ‹?—U?“±?‰Á?”M?‘•?’u?‚Ì?’¼?Œð?�À?•W?•Ï?Š·?‚ð?—p?‚¢?‚½?ƒR?ƒC?ƒ‹?“d?—¬?�§?Œä?–@?",,"“d‹CŠw‰ï˜_•¶Ž�D","“d‹CŠw‰ï","vol. 132","no. 6","pp. 659-665",2012,June
"�Îˆä —C‹G,“¡“c ‰p–¾,“à“c ’¼Šì,”ö�è ˆê”Ž","ƒ]�[ƒ“ƒRƒ“ƒgƒ��[ƒ‹—U“±‰Á”M‘•’u‚Ì’¼Œð�À•W•ÏŠ·‚ð—p‚¢‚½ƒRƒCƒ‹“d—¬�§Œä–@","”¼“±‘Ì“d—Í•ÏŠ·Œ¤‹†‰ï","“d‹CŠw‰ïŒ¤‹†‰ïŽ‘—¿",,,"no. SPC-11-052","pp. 157-162",2011,Jan.
"�Έä—C‹G,ƒtƒ@ƒ€ ƒSƒN ƒn�[,“¡“c‰p–¾,“à“c’¼Šì,”ö�èˆê”Ž","ƒ]�[ƒ“ƒRƒ“ƒgƒ��[ƒ‹—U“±‰Á”M‘•’u‚Ì“d—¬�§Œä–@","•½�¬22”N“d‹CŠw‰ï‘S�‘‘å‰ï","•½�¬22”N “d‹CŠw‰ï‘S�‘‘å‰ï �u‰‰˜_•¶�W",,"Vol. 4","No. 040","pp. 66-67",2010,Mar.