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"�¬—Ñ �“,—é–Ø—T”V,•�•”’¼–¾,‹{–{‹±�K,ŒÃ‰®ˆê�m","SiO2�×�ü–„‚ß�ž‚ÝInP/InGaAs DHBT‚Ì�ì�»","‘æ57‰ñ‰ž—p•¨—�ŠwŠÖŒW˜A�‡Œ¤‹†‰ï",,,,,,2010,Mar.
"YASUYUKI MIYAMOTO,Shinnosuke Takahashi,Takashi Kobayashi,Hiroyuki Suzuki,KAZUHITO FURUYA","Evaluation of collector current spreading of InGaAs SHBT with 75-nm-thick collector","2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices�iAWAD�j",,,,,,2009,June
"�‚‹´�V”V�•,ŽR‰º�_–¾,�¬—Ñ�“,ˆé’J—DŽ¡,—é–Ø—T”V,‹{–{‹±�K,ŒÃ‰®ˆê�m","EB˜IŒõ‚É‚æ‚è�ì�»‚µ‚½ƒGƒ~ƒbƒ^•�200nm‚ÌInP/InGaAs SHBT","2008”N�H‹G‘æ69‰ñ‰ž—p•¨—�‰ïŠw�p�u‰‰‰ï",,,,,,2008,Sept.