"M. Hatano,T. Iwasaki,K. Tsuzuki,K. Sato,H. Kato,T. Makino,M. Ogura,D. Takeuchi,H. Okushi,S. Yamasaki","High voltage and high temperature operation of diamond junction FETs with the lateral p-n junctions","Hasselt Diamond Workshop 2014",,,,,,2015,Feb. "ŠâèF”V,¯–ì—Y“l,“s’zN•½,‰Á“¡’ˆŒõ,–q–ìr°,¬‘q­•F,’|“à‘å•ã,‘å‹øG¢,ŽRè‘,”g‘½–ì–rŽq","ƒ_ƒCƒ„ƒ‚ƒ“ƒhÚ‡Œ^“dŠEŒø‰Êƒgƒ‰ƒ“ƒWƒXƒ^‚Ì‚‰·E‚“dˆ³“Á«","‘æ27‰ñƒ_ƒCƒ„ƒ‚ƒ“ƒhƒVƒ“ƒ|ƒWƒEƒ€",,,,,,2013,Nov. "T. Iwasaki,Y.Hoshino,K.Tsuzuki,H.Kato,T.Makino,M.Ogura,D.Takechi,H.Okushi,S.Yamazaki,M.Hatano","High Temperature Performance of Diamond Junction Field Effect Transistors","JSAP-MRS Joint Symposia",,,,,,2013,Sept. "¯–ì—Y“l,ŠâèF”V,“s’zN•½,‰Á“¡’ˆŒõ,–q–ìr°,¬‘q­•F,’|“à‘å•ã,‘å‹øG¢,ŽRè‘,”g‘½–ì–rŽq","ƒ_ƒCƒ„ƒ‚ƒ“ƒh‰¡Œ^Ú‡FET‚̉·“x“Á«","‘æ60‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï",,,,,,2013,Mar. "K. Tsuzuki,T. Iwasaki,Y. Hoshino,H. Kato,T. Makino,M. Ogura,D. Takeuchi,S. Yamasaki,M. Hatano","Diamond JFET Fabricated by Selectively Grown n+ Diamond Gates","IEEE EDS WIMNACT-37, Future Trend of Nanodevices and Photonics",,,,,,2013,Feb. "¯–ì—Y“l,“s’zN•½,‰Á“¡’ˆŒõ,–q–ìr°,¬‘q­•F,ŠâèF”V,’|“à‘å•ã,‘å‹øG¢,ŽRè‘,”g‘½–ì–rŽq","n+‘I‘𬒷‚ð—˜—p‚µ‚½ƒ_ƒCƒ„ƒ‚ƒ“ƒhÚ‡Œ^“dŠEŒø‰Êƒgƒ‰ƒ“ƒWƒXƒ^‚ÌŽŽì‚ƃfƒoƒCƒX“Á«‚̉ðÍ","‘æ26‰ñƒ_ƒCƒ„ƒ‚ƒ“ƒhƒVƒ“ƒ|ƒWƒEƒ€",,,,,,2012,Nov. "Takayuki Iwasaki,Yuto Hoshino,Kouhei Tsuzuki,Hiromitsu Kato,Toshiharu Makino,Masahiko Ogura,Daisuke Takeuchi,Tsubasa Matsumoto,Hideyo Okushi,Satoshi Yamasaki,Mutsuko Hatano","Diamond Junction Field-Effect Transistors with Slectively Grown n+-Side Gates",,"Appl. Phys. Express",," 5"," 091301",,2012,Sept. "“s’zN•½,‰Á“¡’ˆŒõ,–q–ìr°,¬‘q­•F,’|“à‘å•ã,‘å‹øG¢,¯–ì—Y“l,ŠâèF”V,ŽRè‘,”g‘½–ì–rŽq","nŒ^ƒ_ƒCƒ„ƒ‚ƒ“ƒh”¼“±‘Ì‚Ì‘I‘𬒷–@‚ð—p‚¢‚½‰¡Œ^Ú‡FET","‘æ73‰ñH‹G‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,,,2012,Sept. "“s’z N•½,‰Á“¡’ˆŒõ,–q–ìr°,¬‘q­•F,¯–ì—Y“l,ŠâèF”V,ŽRè‘,”g‘½–ì–rŽq","nŒ^ƒ_ƒCƒ„ƒ‚ƒ“ƒh”¼“±‘Ì‚Ì‘I‘𬒷‚ð“K—p‚µ‚½‰¡Œ^p-nƒ_ƒCƒI[ƒh","‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï",,,,,,2012,Mar. "Takayuki Iwasaki,Yuto Hoshino,Kouhei Tsuzuki,H. Kato,T. Makino,M. Ogura,D. Takeuchi,T. Matsumoto,H. Okushi,S. Yamasaki,Mutsuko Hatano","Diamond Semiconductor JFETs by Selectively Grown n+-Diamond Side Gates for Next Generation Power Devices","2012 IEEE International Electron Devices Meeting (IEDM)(2012)",,,,,,2012, "Yuto Hoshino,Takayuki Iwasaki,Kouhei Tsuzuki,H. Kato,T. Makino,M. Ogura,D. Takeuchi,T. Matsumoto,S. Yamasaki,Mutsuko Hatano","Diamond Lateral p-n Diodes and JFETs by Selective Growth of n+ Diamond","2012 International Conference on Solid State Devices and Materials(SSDM 2012)",,,,,,2012,