"Masashi Yukinari,Noriaki Sato,Nobuhiko Nishiyama,Shigehisa Arai","Spectral characteristics of a 1.3-?m npn-AlGaInAs/InP transistor laser under various operating conditions",,"IEICE Electronics Express",,"Vol. 11","No. 18","pp. 1-6",2014,Aug.
"Takumi Yoshida,Takaaki Kaneko,Masashi Yukinari,Nobuhiko Nishiyama,SHIGEHISA ARAI","Lasing characteristics of 1.3-?m npn-AlGaInAs/InP Transistor Laser - dependence of the base layer structure","Compound Semiconductor Week 2014, 26th International Conference on Indium Phosphide and Related Materials.",,,"  Mo","  B2","  1",2014,May
"金子貴晃,行成元志,吉田匠,西山伸彦,荒井滋久","1.3μm帯npn-AlGaInAs/InPトランジスタレーザにおける ベース層構造の変更による発振特性の改善","電子情報通信学会 光エレクトロニクス（OPE）研究会 2014年度4月研究会",,,,,,2014,Apr.
"金子貴晃,行成元志,吉田匠,西山伸彦,荒井滋久","1.3μm帯npn-AlGaInAs/InPトランジスタレーザ発振特性の ベース層構造依存性","電子情報通信学会 2014年総合大会",,,"  C-4-31",,,2014,Mar.
"吉田匠,行成元志,金子貴晃,西山伸彦,荒井滋久","ベース層の広禁制帯幅化による1.3 ?m帯npn-AlGaInAs/InP トランジスタレーザの発振特性改善","第3回IPDA研究会",,,"  P03",,,2014,Jan.
"行成 元志,佐藤 憲明,西山 伸彦,荒井 滋久","1.3μm帯npn-AlGaInAs/InPトランジスタレーザ発光スペクトルの動作条件依存性","電気情報通信学会 2013年ソサイエティ大会",,,,,"  C-4-26",2013,Sept.
"Noriaki Sato,Mizuki Shirao,Takashi Sato,Masashi Yukinari,Nobuhiko Nishiyama,Tomohiro Amemiya,Shigehisa Arai","Design and Characterization of AlGaInAs/InP Buried Heterostructure Transistor Lasers Emitting at 1.3-?m Wavelength",,"IEEE J. Select. Top. Quantum Electron.",,"Vol. 19","No. 4","pp. 1502608",2013,July
"Masashi Yukinari,Noriaki Sato,Nobuhiko Nishiyama,Shigehisa Arai","Spectral Characteristics under Various Operation Conditions of 1.3-μm npn-AlGaInAs/InP Transistor Laser","The 10th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2013)",,,,,"  ThK2-2",2013,July
"Noriaki Sato,Mizuki Shirao,Takashi Sato,Masashi Yukinari,Nobuhiko Nishiyama,Tomohiro Amemiya,Shigehisa Arai","Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3-um Wavelength",,"IEEE Photonics Technol. Lett.",,"Vol. 25","No. 8","pp. 728-730",2013,Feb.
"Noriaki Sato,Mizuki Shirao,Takashi Sato,Masashi Yukinari,Nobuhiko Nishiyama,Tomohiro Amemiya,S. Arai","Room-Temperature Continuous-Wave Operation of a 1.3-μm npn-AlGaInAs/InP Transistor Laser","23rd IEEE International Semiconductor Laser Conference (ISLC 2012)",,,,"No. MA7",,2012,Oct.