"浦壁隆浩,神田大毅,萩原誠,檜垣優介,糸川祐樹","直列接続されたパワー半導体素子のゲート磁気結合駆動におけるゲート電圧振動の抑制法",,"電気学会論文誌. D, 産業応用部門誌","電気学会",,,,2024,Dec.
"神田大毅,石井一輝,浦壁隆浩,萩原 誠,糸川祐樹,檜垣優介","トランス並列ダンピング方式とコンデンサを併用した直列素子の電圧アンバランス抑制方法","令和6年電気学会全国大会",,"電気学会",,"No. 4-014","pp. 24-25",2024,Mar.
"神田大毅,石井一輝,浦壁隆浩,萩原 誠,糸川祐樹,檜垣優介","ゲート磁気結合方式を用いた駆動回路におけるゲート電圧振動抑制方法","電気学会研究会資料. SPC, 半導体電力変換研究会",,,,,,2023,Oct.
"K. Fujisaki,T. Hosotani,T. Urakabe,Y. Takamura,Y. Matsumoto","Market Research on Electrical Motor and Power Electronics Technology and Magnetic Material Multi-Scale Analysis","The 47th Annual Conference on MAGNETISM in Japan",,,,,,2023,Sept.
"石井一輝,神田大毅,浦壁隆浩,萩原誠,糸川祐樹,檜垣優介","ゲート磁気結合トランスとコンデンサを併用したSiC-MOSFET/SiC-SBDスイッチング素子の直列駆動に関する研究","電気学会研究会資料. SPC, 半導体電力変換研究会",,"電気学会",,,,2023,July
"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Makoto Hagiwara,Takahiro Urakabe,Shigeki Harada","Automated Flexible Modeling for Various Full-SiC Power Modules",,"IEEE Transactions on Power Electronics","IEEE","Vol. 38","Issue 5","pp. 6094-6107",2023,May
"神田大毅,石井一輝,浦壁隆浩,萩原 誠,檜垣優介","ゲート磁気結合方式を用いた駆動回路におけるゲート電圧振動抑制方法","令和5年電気学会全国大会",,,,"  4-019","pp. 28-29",2023,Mar.
"石井一輝,浦壁隆浩,萩原誠,中嶋純一,檜垣優介,地道拓志","ゲート磁気結合トランスとコンデンサを併用したSiC-MOSFET/SiC-SBDスイッチング素子の直列駆動に関する研究","2022年電気学会産業応用部門大会",,,,"  1-40","pp. I-183-I-186",2022,Aug.
"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Kenji Hatori,Ryo Tsuda,Hitoshi Uemura,Makoto Hagiwara,Takahiro Urakabe","Investigation of Full SiC Power Modules for More Electric Aircraft with Focus on FIT Rate and High Frequency Switching",,"IEEE Transactions on Industry Applications","IEEE","Vol. 58","No. 3","pp. 2978-2986",2022,May
"藤?敬介,細谷達也,浦壁隆浩,高村陽太,松本 康","モータやパワーエレクトロニクスの市場調査と磁性体マルチスケール解析","令和4年電気学会全国大会シンポジウム","令和4年電気学会全国大会講演論文集",,,,,2022,Mar.
"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Kenji Hatori,Ryo Tsuda,Hitoshi Uemura,Makoto Hagiwara,Takahiro Urakabe","Investigation of Full SiC Power Modules for More Electric Aircraft with Focus on FIT Rate and High Frequency Switching","2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia)",,,,,,2021,July
"中嶋純一,堀口剛司,浦壁隆浩,萩原誠","SiC-MOSFET, GaN-HEMTに適用可能なユニバーサルデバイスモデルの開発","令和3年電気学会全国大会",,,,"  4-001","pp. 1-2",2021,Mar.
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