"N. Takebe,T. Kobayashi,H. Suzuki,Y. Miyamoto,K. Furuya","Fabrication of InP/InGaAs DHBTs with buried SiO2 wires",,"IEICE Trans. Electron.","IEICE","vol. E94-C","no. 5","pp. 830-834",2011,May
"M. Yamada,T. Uesawa,Y. Miyamoto,K. Furuya","Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density",,"IEEE Electron Device Lett.","IEEE","vol. 32","# 4","pp. 491-493",2011,Apr.
"H. Saito,Y. Matsumoto,Y. Miyamoto,K. Furuya","Vertical InGaAs Channel Metal?Insulator?Semiconductor Field Effect Transistor with High Current Density",,"Jpn. J. Appl. Phys.",,"vol. 50","no. 1"," 014102",2011,Jan.
"Toru Kanazawa,kazuya wakabayashi,Hisashi Saito,Ryousuke Terao,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Submicron InP/InGaAs Composite-Channel Metal?Oxide?Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source",,"Applied Physics Express",,"Vol. 3","No. 9"," 094201",2010,Sept.
"H. Saito,Y. Miyamoto,K. Furuya","Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-wide Mesa Structure and a Drain Current Density of 7 MA/cm2",,"Applied Phys. Exp.",,"vol. 3","no. 8","p. 084101",2010,Aug.
"M. Yamada,T. Uesawa,Y. Miyamoto,K. Furuya","Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density","37th International Symposium on Compound Semiconductor",,,,,,2010,June
"T. Kanazawa,K. Wakabayashi,H. Saito,R. Terao,T. Tajima,S. Ikeda,Y. Miyamoto,K. Furuya","Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut","22nd Int. Conf. Indium Phosphide and Related Materials",,,,,,2010,June
"H. Saito,Y. Miyamoto,K. Furuya","Vertical InGaAs FET with hetero-launcher and undoped channel","22nd Int. Conf. Indium Phosphide and Related Materials",,,,,,2010,June
"Y. Miyamoto,S. Takahashi,T. Kobayashi,Hiroyuki Suzuki,K. Furuya","Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector",,"IEICE Trans. Electron.","電子情報通信学会","vol. E93C","no. 5","pp. 644-647",2010,May
"H. Saito,Y. Miyamoto,K. Furuya","Selective undercut etching for ultra narrow mesa structure in vertical InGaAs channel MISFET","Global COE International Symposium",,,,,,2010,Mar.
"若林和也,金澤 徹,齋藤尚史,寺尾良輔,池田俊介,宮本恭幸,古屋一仁","再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"寺尾良輔,金澤 徹,齋藤尚史,若林和也,池田俊介,宮本恭幸,古屋一仁","Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"磯谷優治,小林 嵩,山口裕太郎,宮本恭幸,古屋一仁","Si基板上へ転写したInP系HBTの動作","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"齋藤尚史,楠崎智樹,松本 豊,宮本恭幸,古屋一仁","縦型InGaAs チャネルMISFET の極微細メサに向けた選択的ウェットエッチング","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"小林 嵩,鈴木裕之,武部直明,宮本恭幸,古屋一仁","SiO2細線埋め込みInP/InGaAs DHBTの作製","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"金澤 徹,若林和也,齋藤尚史,寺尾良輔,田島智宣,池田俊介,宮本恭幸,古屋一仁","III-V族サブミクロンチャネルを有する高移動度MOSFET","電気学会電子デバイス研究会",,,,,,2010,Mar.
"Takafumi Uesawa,Masayuki Yamada,Yasuyuki Miyamoto,Kazuhito Furuya","Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases",,"Japanese Journal of Applied Physics","応用物理学会","Vol. 49",," 024302",2010,Feb.
"金澤徹,若林和也,齋藤尚史,寺尾良輔,田島智宣,池田俊介,宮本恭幸,古屋一仁","Al2O3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET","電子情報通信学会 電子デバイス研究会","電子情報通信学会技術研究報告 電子デバイス",,"Vol. 109","No. 360","pp. 39-42",2010,Jan.
"山田真之,上澤岳史,宮本恭幸,古屋一仁","HBTにおける高電流密度動作時エミッタ充電時間の電流反比例特性からの逸脱","電子情報通信学会電子デバイス研究会","電子情報通信学会技術研究報告 電子デバイス",,,,,2010,Jan.
"Toru Kanazawa,Hisashi Saito,Kazuya Wakabayashi,Ryousuke Terao,Tomonori Tajima,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N+-InGaAs Source Region","2009 International Conference on Solid State Devices and Materials",,,,,"pp. 246-247",2009,Oct.
"H. Saito,Y. Miyamoto,K. Furuya","Fabrication of vertical InGaAs channel MISFET with heterostructure launcher and undoped channel","Int. Symposium on Silicon Nano Devices in 2030",,,,,,2009,Oct.
"K. Wakabayashi,T. Kanazawa,H. Saito,R. Terao,S. Ikeda,Y. Miyamoto,K. Furuya","InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure","Int. Symposium on Silicon Nano Devices in 2030",,,,,,2009,Oct.
"武部直明,山下浩明,高橋新之助,宮本恭幸,古屋一仁","SiO2細線埋込InP系HBTにおけるCBr4を使ったin-situエッチング","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"齋藤尚史,楠崎智樹,松本 豊,宮本恭幸,古屋一仁","ヘテロランチャと真性チャネルを有する縦型InGaAs-MISFET の高駆動能力動作","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"楠崎智樹,齋藤尚史,松本 豊,宮本恭幸,古屋一仁","縦型InGaAs-MISFETの試作","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"若林和也,金澤 徹,齋藤尚史,田島智宣,寺尾良輔,宮本恭幸,古屋一仁","「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"山田真之,上澤岳史,宮本恭幸,古屋一仁","HBTにおける超高速動作時エミッタ充電時間の理論的解析","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"金澤徹,齋藤尚史,若林和也,田島智宣,宮本恭幸,古屋一仁","MOVPE再成長n+ソースを有する?-?族高移動度チャネルMOSFET","電気学会 電子・情報・システム部門大会",,,,,,2009,Sept.
"若林 和也,金澤 徹,齋藤 尚史,田島 智宣,寺尾 良輔,宮本 恭幸,古屋 一仁","再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性","第70回応用物理学会学術講演会",,,,,"pp. 1299",2009,Sept.
"YASUYUKI MIYAMOTO,Hiroaki Yamashita,Naoaki Takebe,KAZUHITO FURUYA","In-situ Etching in MOVPE for Thin Collector of InP HBT with Buried SiO2 Wire","Topical Workshop on Heterostructure Materials (TWHM2009)",,,,,,2009,Aug.
"Takafumi Uesawa,Masayuki Yamada,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Monte Carlo Analysis of Base Transit Times of InP/Gaines Heterojunction Bipolar Transistors with Ultrathin Bases","Topical Workshop on Heterostructure Materials (TWHM2009)",,,,,,2009,Aug.
"武部直明,山下浩明,高橋新之助,齋藤尚史,小林 嵩,宮本恭幸,古屋一仁","SiO2細線埋込InP系HBTにおけるCBr4を使ったIn-situエッチング","電子情報通信学会電子デバイス研究会",,,,,,2009,June
"YASUYUKI MIYAMOTO,Toru Kanazawa,Hisashi Saito,KAZUHITO FURUYA","InGaAs/InP MISFET with epitaxially grown source","2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD）",,,,,,2009,June
"YASUYUKI MIYAMOTO,Shinnosuke Takahashi,Takashi Kobayashi,Hiroyuki Suzuki,KAZUHITO FURUYA","Evaluation of collector current spreading of InGaAs SHBT with 75-nm-thick collector","2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD）",,,,,,2009,June
"H. Saito,Y. Miyamoto,K. Furuya","Vertical InGaAs MOSFET with Hetero-Launcher and Undoped Channel","IEEE 21th Conference on Indium Phosphide and Related Materials",,,,," 311",2009,May
"Toru Kanazawa,KAZUHITO FURUYA,YASUYUKI MIYAMOTO,Hisashi Saito,kazuya wakabayashi,Tomonori Tajima","InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source","IEEE 21th Conference on Indium Phosphide and Related Materials",,,,,,2009,May
"峯崎純太郎,宮本恭幸,古屋一仁","InP/GaInAs位相シフタによる電子波回折観測可能性の向上","2009年春季第56回応用物理学関係連合講演会",,,,,,2009,Mar.
"金澤徹,古屋一仁,宮本恭幸,齋藤尚史,若林和也,田島智宣","MOVPE再成長ソースを有するIII-V族MOSFETの電流特性","第56回応用物理学関係連合講演会",,,,,,2009,Mar.
"齋藤尚史,楠崎智樹,松本豊,宮本恭幸,古屋一仁","ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFET","第56回応用物理学会関係連合講演会",,,,," 1456",2009,Mar.
"上澤岳史,山田真之,宮本恭幸,古屋一仁","超薄層ベースInP/GaInAs HBTの組成傾斜によるベース走行時間短縮","2009年春季第56回応用物理学関係連合講演会",,,,,,2009,Mar.
"齋藤尚史,金澤徹,宮本恭幸,古屋一仁","ヘ テロランチャと真性チャネルを有する縦型InGaAs-MOSFETの作製","電気学会電子デバイス研究会",,,,,,2009,Mar.
"Hisashi Saito,Yasuyuki Miyamoto,Kazuhito Furuya","Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain",,"Applied Physics Express","The Japan Society of Applied Physics","Vol. 2","No. 3"," 034501",2009,Mar.
"上澤岳史,山田真之,宮本恭幸,古屋一仁","超薄層ベースInP 系HBT におけるGraded Base によるベース走行時間短縮","Technical Report of IEICE, Electron Devices",,,,,,2009,Jan.
"So Nishimura,KAZUHITO FURUYA,YASUYUKI MIYAMOTO","Design and Simulation of Hot-Electron Diffraction Oservation by Scanning Probe ? Quantitative Evaluation of Observation Possibility ?",,"Jap. J. Appl. Phys.",,"vol. 47","no. 9","pp. 8652-8658",2008,Nov.
"So Nishimura,KAZUHITO FURUYA,YASUYUKI MIYAMOTO","Design and Simulation of Hot-Electron Diffraction Oservation by Scanning Probe ? Quantitative Evaluation of Observation Possibility ?",,"Jpn. J. Appl.Phys.",,"vol. 47","no. 9","pp. 8652-8658",2008,Nov.
"宮本 恭幸,長谷川 貴史,齋藤 尚史,古屋 一仁","RF Characteristics of Schottky-Gate-Controlled Hot Electron Transistor","IEEE Nanotechnology Materials and Devices Conference 2008",,,,,,2008,Oct.
"高橋新之助,山下浩明,小林嵩,磯谷優治,鈴木裕之,宮本恭幸,古屋一仁","EB露光により作製したエミッタ幅200nmのInP/InGaAs SHBT","2008年秋季第69回応用物理会学術講演会",,,,,,2008,Sept.
"T. Kanazawa,H. Saito,K. Wakabayashi,Y. Miyamoto,K. Furuya","Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET","2008 International Conference on Solid State Devices and Materials",,,,,,2008,Sept.
"上澤岳史,宮本恭幸,古屋一仁","InP/InGaAs HBTベース層におけるプラズモン散乱のモンテカルロ解析","2008年秋季第69回応用物理会学術講演会",,,,,,2008,Sept.
"齋藤尚史,孟 伶我,宮本 恭幸,古屋 一仁","絶縁ゲート制御型ホットエレク トロントランジスタのゲート制御能力向上","第69回応用物理学会学術講演会",,,,," 1262",2008,Sept.
"金澤徹,古屋一仁,宮本恭幸,齋藤尚史,若林和也,田島智宣","?-?族高駆動能力MOSFETへ向けたn+-InGaAsソース/ドレイン層の横方向埋め込み成長","第69回応用物理学会学術講演会",,,,,,2008,Sept.
"H. Saito,Y. Miyamoto,K. FUruya","Increment of voltage gain of InP/InGaAs Hot Electron Transistors controlled by insulated gate","International Nano-Optoelectronic Workshop (iNOW 2008)","Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International",,,," 355",2008,Aug.
"西村 想,荒井 剛,宮本恭幸,古屋一仁","弾道電子放出顕微鏡を利用した電子波回折観測の可能性",,,,,,,2008,July
"Hisashi Saito,Takahiro Hino,Yasuyuki Miyamoto,Kazuhito Furuya","Hot electron transistor controlled by insulated gate with 70nm-wide emitter","IEEE 20th Conference on Indium Phosphide and Related Materials",,,,,,2008,May
"齋藤尚史,孟 伶我,宮本恭幸,古屋一仁","絶縁ゲート制御型ホットエレクト ロントランジスタの電圧利得向上","第55回応用物理学関係連合研究会",,,,," 1471",2008,Mar.
"山田朋宏,上澤岳史,古屋一仁,宮本恭幸","ゲート制御ホットエレクトロントランジスタのバリスティックモデル解析","応用物理学会春季",,," 29a-D-3",,,2008,Mar.
"Mitsuhiko Igarashi,KAZUHITO FURUYA,YASUYUKI MIYAMOTO","Cutoff Frequency Characteristics of Gate-Control Hot Electron Transistors by Monte Carlo Simulation",,"Physica Status Solidi(C)",,"vol. 5","no. 1","p. 70",2008,Jan.
"Shinnosuke Takahashi,Tsukasa Miura,Hiroaki Yamashita,Yasuyuki Miyamoto,Kazuhito Furuya","DC Characteristics of Heterojunction Bipolar Transistor with Buried SiO2 Wires in Collector","The 34th International Symposium on Compound Semiconductors",,,,,,2007,Oct.
"山田朋宏,古屋一仁,宮本恭幸","先端ノンドープ構造ホットエレクトロンエミッタ充電時間解析","応用物理学会秋季",,," 4p-K-4",,,2007,Sept.
"Hiroaki Yamashita,Tsukasa Miura,Shinnosuke Takahashi,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Fabrication of 200-nm-thick SiO2 wires buried in InP for reduction in collector capacitance in InP/InGaAs DHBT","7th Topical Workshop on Heterostructure Microelectronics",,,,,,2007,Aug.
"M. Igarashi,N. Machida,Y. Miyamoto,K. Furuya","Cutoff Frequency Characteristics of Insulated-gate Hot-electron Transistors","15th International Conference on 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors(HCIS15)","Organizing Committee of HCIS15",,"Vol. MoP-45",,,2007,July
"日野高宏,諏訪 輝,齋藤尚史,宮本恭幸,古屋一仁","絶縁ゲートホットエレクトロントランジスタのエミッタ微細化","応用物理学関係連合講演会","応用物理学会",,"Vol. 27p-X-4",,,2007,Mar.
"山下浩明,三浦 司,高橋新之助,宮本恭幸,古屋一仁","SiO2細線埋め込みHBTにおけるコレクタ容量削減のための200nm厚細線","応用物理学会関係連合講演会","応用物理学会",,"Vol. 27a-SM-8",,,2007,Mar.
"高橋新之助,三浦 司,山下浩明,宮本恭幸,古屋一仁","コレクタ層内にSiO2細線を埋め込んだHBTのDC特性","応用物理学関係連合講演会","応用物理学会",,"Vol. 27p-X-5",,,2007,Mar.
"Akira Suwa,Issei Kashima,Yasuyuki Miyamoto,Kazuhito Furuya","Increase in collector current in hot-electron transistors controlled by gate bias",,"Japanese journal of Applied Physica",,"Vol. 46","No. 9","pp. L202-L204",2007,
"Yasuyuki Miyamoto,Masashi Ishida,Tohru Yamamoto,Tsukasa Miura,Kazuhito Furuya","InP buried growth of Si2 wires toward reduction of collector capacitance in HBT",,"Journal of Crystal Growth",,"Vol. 298",,"pp. 867-870",2007,
"斎藤尚史,諏訪 輝,長谷川貴史,日野高宏,大野真也,五十嵐満彦,宮本恭幸,古屋一仁","絶縁ゲートにより制御するホットエレクトロントランジスタの走行層幅微細化","電子デバイス研究会","電子情報通信学会",,"Vol. EDD-07-42",,,2007,
"諏訪 輝,長谷川貴史,日野高宏,宮本恭幸,古屋一仁","絶縁ゲートにより制御するホットエレクトロントランジスタの作製","電子デバイス研究会","電子情報通信学会 技術報告書",,"Vol. ED206","No. 186",,2006,Dec.
"Kazuhito Furuya","Double-Slit Interference Observation of Hot Electrons in Semiconductors---Analysis of Experimental Data---","Japan-Germany Joint Workshop, 2006 'Nano-Electronics'",,,,,"pp. Session 6-2",2006,Oct.
"Nobuya Machida,Shunsuke Satoh,Kazuhito Furuya","Transfer efficiency in ballistic electron emission microscopy taking diffraction of emitted hot electrons into account",,"Surface Science",,"Vol. 600",,"pp. 4843-4847",2006,Oct.
"諏訪 輝,長谷川貴史,日野高宏,宮本恭幸,古屋一仁","新ホットエレクトロントランジスタの室温動作にむけた新構造の提案","応用物理学関係連合講演会","応用物理学会",,"Vol. 31p-ZB-3",,,2006,Aug.
"五十嵐満彦,山田朋宏,町田信也,宮本恭幸,古屋一仁","ゲート制御ホットエレクトロントランジスタの実験構造を考慮したモンテカルロ解析","応用物理学関係連合講演会","応用物理学会",,"Vol. 31p-ZB-4",,,2006,Aug.
"甲斐敬紹,福山義人,宮本恭幸,古屋一仁","狭メサHBTの為のノンセルフアラインメント電子ビーム露光","応用物理学関係連合講演会","応用物理学会",,"Vol. 31p-ZB-2",,,2006,Aug.
"西村 想,町田信也,古屋一仁","有効質量差と非放物線特性を考慮した電子波回折実験のシミュレーション","応用物理学関係連合講演会","応用物理学会",,"Vol. 30p-RE-1",,,2006,Aug.
"Yasuyuki MIYAMOTO,Ryo NAKAGAWA,Issei KASHIMA,Masashi ISHIDA,Nobuya MACHIDA,Kazuhito FURUYA","Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer",,"Trans. IECE of Japan",,"Vol. E89-C","No. 7","pp. 972-978",2006,July
"Y. Miyamoto,I. Kashima,A. Suwa,K. Furuya","Increase in currentdensity at 25-nm-wide emitter for InP hot-electron transistors without base layer","64th Annual Device Research Conference","64th Annual Device Research Conference",,,,"pp. V.A-7",2006,June
"宮本恭幸,石田昌司,山本 徹,三浦 司,古屋一仁","MOVPEによるInP中のSi2細線埋込成長とそのHBTコレクタ容量低減への応用","電子情報通信学会 電子デバイス研究会","電子情報通信学会",,"Vol. DE2006-44",,,2006,June
"N. Machida,Y. Miyamoto,K. Furuya","Minimum emitter charging time for heterojunction bipolar transistors","The 18th Indium Phosphide and Related Materials Conference (IPRM2006)","The 18th Indium Phosphide and Related Materials Conference (IPRM2006)",,,,"pp. WP16",2006,May
"Y. Miyamoto,M. Ishida,T. Yamamoto,T. Miura,K. Furuya","InP Buried growth of SiO2 wires toward reduction of collector","13th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE -XIII)","13th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE -XIII)",,,,"pp. We-A3-1",2006,May
"町田信也,五十嵐満彦,山田朋宏,宮本恭幸,古屋一仁","ゲート制御ホットエレクトロントランジスタのモンテカルロ解析","応用物理学関係連合講演会","応用物理学会",,"Vol. 23a-ZE-20",,,2006,Mar.
"古屋一仁,宮本恭幸,鹿嶋一生,諏訪 輝","ゲートにより制御するホットエレクトロントランジスタにおける電流量の増大","応用物理学関係連合講演会","応用物理学会",,"Vol. 23a-ZE-21",,,2006,Mar.
"五十嵐満彦,町田信也,古屋一仁","ゲート制御ホットエレクトロントランジスタにおけるエミッタ充電時間のエミッタ幅依存性","応用物理学関係連合講演会","応用物理学会",,"Vol. 23a-ZE-22",,,2006,Mar.
"町田信也,宮本恭幸,古屋一仁","ヘテロ接合バイポーラトランジスタの最小エミッタ充電時間","応用物理学関係連合講演会","応用物理学会",,"Vol. 23a-ZE-23",,,2006,Mar.
"石田昌司,山本 徹,三浦 司,宮本恭幸,古屋一仁","SiO2細線埋め込み成長によるInP系HBTのコレクタ容量低減の提案","応用物理学関係連合講演会","応用物理学会",,"Vol. 23a-ZE-26",,,2006,Mar.
"K. Furuya,N. Machida,M. Igarashi,R. Nakagawa,I. Kashima,M. Ishida,Y. Miyamoto","MC simulation of ultrafast transistor using ballistic electron in intrinsic semiconductor and its fabrication feasibility",,"Journal of Physics: Conference Series",,"Vol. 38",,"pp. 208-211",2006,
"T. Kai,Y. Fukuyama,Y. Miyamoto,K. Furuya,K. Kurishima,S. Yamahata","Electron beam lithography for non self-aligned HBTs with extreamly narrow emitter mesa","2006 International Microprocesses and Nanotechnology Conference",,,"Vol. 26A-4-4",,,2006,
"N. Machida,Y. Miyamoto,K. Furuya","Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism",,"Jpn. J. Appl. Phys.",,"Vol. 45","No. 35","pp. L935-L937",2006,
"K. Furuya,N. Machida,R. Nakagawa,I. Kashima,M. Ishida,Y.Miyamoto","MC simulation and fabrication of ultrafast transistor using ballistic electron in intrinsic semiconductor","Int. Conf. New Phenomena in Mesoscopic Systems and Surfaces and Interfaces of Mesoscopic Devices","Int. Conf. New Phenomena in Mesoscopic Systems and Surfaces and Interfaces of Mesoscopic Devices",,"Vol. P30",,,2005,Nov.
"佐藤俊介,町田信也,古屋一仁","電子波回折実験における波長広がりを考慮したバリスティック電流の数値解析","応用物理学関係連合講演会","応用物理学会",,"Vol. 11a-W-11",,,2005,Sept.
"鹿嶋一生,古屋一仁,宮本恭幸,中川 亮","InP系ホットエレクトロントランジスタにおけるエミッタ接地の飽和特性とゲートリーク電流の低減","応用物理学関係連合講演会","応用物理学会",,"Vol. 7a-W-11",,,2005,Sept.
"Y. Miyamoto,R. Nakagawa,I. Kashima,K. Takeuchi,Y. Yamada,T. Fujisaki,M. Ishida,KAZUHITO FURUYA","25 nm Wide Emitter and Precise Alignment between Gate and Emitter in InP Hot Electron Transistors","The 6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005)","Topical Workshop on Heterostructure Microelectronics",,,,"pp. TuC-3",2005,Aug.
"五十嵐満彦,中川 亮,鹿島一生,町田信也,宮本恭幸,古屋一仁","25nm幅エミッタInP系バリスティックトランジスタのエミッタ電流制御特性解析","応用物理学関係連合講演会","応用物理学会",,"Vol. 31p-S-7",,,2005,Mar.
"宮本恭幸,石田昌司,野中俊宏,山本 徹,古屋一仁","InP系HBTコレクタ容量低減の為の金属細線埋込成長における流速増大による表面平坦化","応用物理学関係連合講演会",,,"Vol. 1a-ZM-10",,,2005,Mar.
"佐藤俊介,町田信也,古屋一仁","FDTD法による三次元電子波回折シミュレーション","応用物理学関係連合講演会","応用物理学会",,"Vol. 31p-ZD-8",,,2005,Mar.
"渡辺康弘,Wei-Bin Qiu,宮本恭幸,古屋一仁","微細HBTのコレクタ中における横方向電流広がりの解析","応用物理学関係連合講演会","応用物理学会",,"Vol. 31p-S-1",,,2005,Mar.
"町田信也,佐藤俊介,古屋一仁","相反定理による電子波回折シミュレーションの高速化","応用物理学関係連合講演会","応用物理学会",,"Vol. 31p-ZD-9",,,2005,Mar.
"古屋一仁","量子効果デバイス研究の展望と課題",,"2005年電子情報通信学会 チュートリアルセッション招待講演「化合物半導体電子デバイスの現状とその可能性?次世代エレクトロニクスの代替と補完?",,"Vol. TC3",,,2005,
"K. Furuya,Y. Ninomiya,N. Machida,Y. Miyamoto","Double-Slit Interference Observation of Hot Electrons in Semiconductors --- Analysis of Experimental Data ---",,"Japanese Journal of Applied Physics",,"Vol. 44","No. 5A","pp. 2936 - 2944",2005,
"五十嵐,中川,鹿嶋,町田,宮本,古屋","25nm幅エミッタInP系バリスティックトランジスタのエミッタ電流制御特性解析",,"応用物理学会講演会",,,,,2005,
"渡辺,丘,宮本,古屋","微細HBTのコレクタ中における横方向電流広がりの解析",,"応用物理学会講演会",,,,,2005,
"KAZUHITO FURUYA","InP ballistic hot electron transistors with reduced emitter width",,"2005 Sweden-Japan International Workshop on Quantum Nano-Physics and Electronics, Kyoto, April 7th -8th",,,,,2005,
"Y. Miyamoto,R. Nakagawa,I. Kashima,M. Ishida,K. Furuya","Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate","Int. Conf. Solid State Devices and Mater","Int. Conf. Solid State Devices and Mater",,"Vol. I-2-6",,,2005,
"Y. Miyamoto,Y. Watanabe,W. Qiu,K. Furuya","Analysis of lateral current spreading in collector of submicron HBT","Int. Conf. Indium Phosphide and Related Materials","Int. Conf. Indium Phosphide and Related Materials",,"Vol. WP-15",,,2005,
"Y,Miyamoto,R. Nakagawa,I. Kashima1,K. Takeuchi,Y. Yamada,T. Fujisaki,M. Ishida,K. Furuya","25 nm Wide Emitter and Precise Alignment between Gate and Emitter in InP Hot Electron Transistors"," 6th Top. WS Heterostructure Microelectronics","6th Top. WS Heterostructure Microelectronics",,"Vol. TuC-3",,,2005,
"Y. Miyamoto,M. Ishida,T. Nonaka,T. Yamamoto,K. Furuya","Tungsten Buried Growth by Using Thin Flow-Liner for Small Collector Capacitance in InP HBT","Int. Conf. Indium Phosphide and Related Materials","Int. Conf. Indium Phosphide and Related Materials",,"Vol. TuA-1-4",,,2005,
"佐藤,狩野,町田,古屋","走査探針による非熱平衡電子回折実験における信号電流の見積もり",,"応用物理学会講演会",,,,"pp. 2a-ZK-5",2004,
"町田,佐藤,古屋","相反定理による電子波回折シミュレーションの高速化",,"応用物理学会講演会",,,,,2004,
"R. Nakagawa,K. Takeuchi,Y. Yamada,Y. Miyamoto,K. Furuya","InP hot electron transistors with reduced emitter width for controllability of collector current by gate bias",,"International Conference on Indium Phosphide and Related Materials",,,,"pp. P1-14",2004,
"R. Nakagawa,K. Takeuchi,Y. Yamada,Y. Miyamoto,K. Furuya","エミッタ形状を変えてゲートによる制御性を高めたInP系ホットエレクトロントランジスタ",,"応用物理学会講演会",,,,"pp. 30a-S-4",2004,
"R. Nakagawa,Y. Yamada,K. Takeuchi,T. Fujisaki,Y. Miyamoto,K. Furuya","InP系ホットエレクトロントランジスタにおける25nm微細幅エミッタの作製",,"応用物理学会講演会",,,,"pp. 3a-ZS-5",2004,
"Y. Miyamoto,Y. Shirai,M. Yoshizawa,K. Furuya","20 nm Periodical Pattern by Calixarene Resists: Comparison of CMC[4]AOMe with MC[6]AOAc",,"2004 International Microprocesses and Nanotechnology Conference",,,,"pp. 28P-6-54",2004,
"N. Machida,H. Kanoh,K. Furuya","Numerical Foundation of Hot-Electron Diffraction Experiment Based on Ballistic Electron Emission Microscope",,"Japanese Journal of Applied Physics",,"Vol. 43","No. 11A","pp. 7390-7394",2004,
"佐藤,町田,古屋","FDTD法による三次元電子波回折シミュレーション",,"応用物理学会講演会",,,,,2004,
"Katsuhiko Takeuchi,Hiroshi Maeda1,Ryo Nakagawa1,Yasuyuki Miyamoto,Kazuhito Furuya","InP hot-electron transistors with emitter mesa fabricated between gate electrodes for reduction in emitter-gate gate-leakage current",,"Jpn. J. Appl. Phys.",,"Vol. 43","No. 2A","pp. L183-L186",2004,
"古屋一仁","ホットエレクトロンによるヤングの2重スリット干渉実験",,"パリティ",,"Vol. 19","No. 2","pp. 54-56",2004,
"町田,狩野,古屋","弾道電子放出顕微鏡によるホットエレクトロン回折実験の数値解析―量子相反性成立の起源―",,"電子情報通信学会電子デバイス研究会技術報告",,"Vol. ED2003","No. 222","pp. 5-9",2004,
"狩野,町田,古屋","BEEMを用いたホットエレクトロン回折実験における量子相反性成立の起源",,"応用物理学会講演会",,,,"pp. 30p-ZE-17",2004,
"古屋,佐藤,町田","放射ホットエレクトロンの回折を考慮したBEEM輸送効率解析",,"応用物理学会講演会",,,,"pp. 31a-ZB-6",2004,
"Yasuyuki Miyamoto,Ren Yamamoto,Hiroshi Maeda,Katuhiko Tekeuchi,Nobuya Machida,Lars-Erik Wernersson,Kazuhito Furuya","InP Hot Electron Transistors with a Buried Metal Gate",,"Japanese Journal of Applied Physics",,"Vol. 42","No. 12","pp. 7221-7226",2003,Dec.
"K. Takeuchi,H. Maeda,R. Nakagawa,Y. Miyamoto,K. Furuya","Wet Etching for Self-Aligned 0.1-mm-wide Emitter in InP/InGaAs HBT",,"Topical Workshop on Heterostructure Microelectronics (TWHM'03)",,"Vol. W-11",,,2003,
"Kazuhito Furuya,Yasunori Ninomiya,Nobuya Machida,Yasuyuki Miyamoto","Young's Double-Slit Interference Observation of Hot Electrons in Semiconductors",,"PHYSICAL REVIEW LETTERS",,"Vol. 91","No. 21","pp. 216803-1-216803-4",2003,
"狩野裕之,町田信也,古屋一仁","位相シフタによる電子波回折観測のための横コヒーレンス条件",,"第64回応用物理学会学術講演会",,,,,2003,
"竹内克彦,前田 寛,中川 亮,宮本恭幸,古屋一仁","ゲート電極間にエミッタメサを作製したInP系ホットエレクトロントランジスタ",,"第64回応用物理学会学術講演会",,,,,2003,
"町田信也,永塚浩之,古屋一仁","井戸幅揺らぎによるダブルバリア共鳴スペクトルの不均一広がり",,"第64回応用物理学会学術講演会",,,,,2003,
"宮本恭幸,二宮泰徳,町田信也,古屋一仁","半導体中のホットエレクトロンによるダブルスリット干渉観測",,"第64回応用物理学会学術講演会",,,,,2003,
"町田信也,鳥海陽平,古屋一仁","ホットエレクトロンダブルスリット透過のモード展開法による解析",,"第64回応用物理学会学術講演会",,,,,2003,
"町田信也,古屋一仁,宮本恭幸,前田寛","超ヘテロナノ構造によるバリスティック伝導の数値シミュレーション",,"第50回応用物理学関係連合講演会",,"Vol. 29a-ZE-10",,,2003,
"横山啓吾,松田耕治,森田竜夫,新井俊希,宮本恭幸,古屋一仁","InP/InGaAs系HBT0.1-um幅エミッタの為のウェットエッチングの改善",,"第50回応用物理学関係連合講演会",,"Vol. 30a-ZF-1",,,2003,
"町田信也,古屋一仁,宮本恭幸,前田寛","超ヘテロナノ構造によるバリスティック伝導の数値シミュレーション",,"第50回応用物理学関係連合講演会",,"Vol. 29a-ZE-10",,,2003,
"K. Furuya,Y. Ninomiya,N. Machida,Y. Miyamoto","Young's Double-Slit Interference of Hot Electron in Semiconductors",,"The 13th International Conference on Non-equilibrium Carrier Dynamics in Semiconductors (HCIS 13)",,"Vol. Th11.17",,,2003,
"K. Furuya,Y. Ninomiya,N. Machida,Y. Miyamoto","Young’s double-slit interference experiment of hot electron in semiconductors",,"Japan-UK 10+10 Meeting",,,,,2003,
"K. Takeuchi,H. Maeda,R. Nakagawa,Y. Miyamoto,K. Furuya","InP hot electron transistors using modulation of gate electrodes sandwiching emitter mesa",,"2003 International Conference on Solid State Devices and Materials",,"Vol. E-7-3",,,2003,
"Y. Miyamoto,R. Yamamoto,H. Maeda,K. Takeuchi,L.-E. Wernersson,K. Furuya Furuya","InP Hot Electron Transistor with a Buried Metallic Gate for Electron Emission",,"60th Annual Device Research Conference, Santa Barbara, CA, June ",,"Vol. III-20",,,2002,
"Y. Miyamoto,H. Nakamura,Y. Ninomiya,H. Oguchi,N. Machida,K. Furuya","Current modulation in fine electrode by hot electron passing through GaInAs/InP double slits",,"International Conference on Indium Phosphide and Related Materials, Stockholm, Sweden",,"Vol. PII-24",,,2002,
"Y. Miyamoto,T. Arai,S. Yamagami,K. Matsuda,K. Furuya","Evaluation of base-collector capacitance in submicron buried metal heterojunction bipolar transistors",,"The 2002 International Conference on Solid State Devices and Materials, Nagoya",,"Vol. E-1-4",,,2002,
"K. Takeuchi,R. Yamamoto,H. Maeda,Y. Miyamoto,K. Furuya","Freestanding tungten wires for BM-HET",,"2002 International Microprocesses and Nanotechnology Conference, Tokyo",,"Vol. 6B-3-4",,,2002,
"町田信也,古屋一仁","位相シフタ干渉観測デバイスにおける3次元 BEEM転送効率の解析",,"第63回応用物理学会学術講演会",,"Vol. 25p-P9-9",,,2002,
"永塚浩之,町田信也,古屋一仁","二重障壁共鳴を用いた位相コヒー レンス評価における構造不均一の影響",,"第63回応用物理学 会学術講演会",,"Vol. 25p-P9-8",,,2002,
"二宮泰徳,中村弘道,宮本恭幸,町田信也,古屋一仁","GaInAs/InP ダブルスリットを通過したホットエレクトロンの電流変調",,"第49回応用物理学関係連合講演会",,"Vol. 27p-YH-16",,,2002,
"町田信也,古屋一仁,深澤優壽,前堅一,平田朋彦,宮本大悟","BEEMを用いた電子波回折観測法の提案",,"電 子情報通信学会技術研究報告",,"Vol. 101","No. 619","pp. 13-18",2002,
"N. Machida,Y. Ninomiya,H. Nakamura,Y. Miyamoto,K. Furuya","Theoretical Explanation of Current Modulation by Magnetic Field Observed in Hot-Electron Double-Slit Experiment",,"21st Electronic Materials Symposium (EMS-21), Izu-Nagaoka",,"Vol. G-10",,"pp. 19-21",2002,
"N. Machida,M. Fukasawa,K. Furuya","Numerical Simulation toward Observation of Electron Wave Diffraction by Ballistic Electron Emission Microscope",,"7th Int'l Conf. Nanometer-scale science and technology (nano-7), 21st European conference on surface science (ecoss-21), Malmo, Sweden",,"Vol. TH-P-091",,"pp. 24-28",2002,
"N. Machida,H. Nagatsuka,M. Nagase,K. Furuya","Phase Coherence and Temperature Dependence of Current-Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode",,"Jpn. J. Appl. Phys.",,"Vol. 41","No. 7A","pp. 4469-4473",2002,
"宮本恭幸,古屋一仁","InP系ヘテロ接合バイポーラトランジスタの高速化技術",,"応用物理",,"Vol. 71","No. 3","pp. 285-294",2002,
"T. Morita,T. Arai,H. Nagatsuka,Y. Miyamoto,K. Furuya","Fabrication of InP/GaInAs Double Heterojunction Bipolar Transistors with 0.1-um-Wide Emitter",,"Jpn. J. Appl. Phys.",,"Vol. 41","No. 2A","pp. L121 - L123",2002,
"前田寛,山本練,竹内克彦,宮本恭幸,古屋一仁","ノンドープInP中の埋込金属周期電極構造を用いたホットエレクトロントランジスタ",,"第63回応用物理学会学術講演会 新潟",,"Vol. 25p-P9-7",,,2002,
"K. Takeuchi,R. Yamamoto,H. Maeda,Y. Miyamoto,K. Furuya","Freestanding Tungten Wires for BM-HET",,"2002 International Microprocesses and Nanotechnology Conference",,"Vol. 6B-3-4",,,2002,
"T. Arai,S. Yamagami,Y. Miyamoto,KAZUHITO FURUYA","Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors with Buried Tungsten Wires",,"Jpn. J. Appl. Phys.",,"Vol. 40","No. 7B","pp. L735",2001,July
"N. Machida,K. Furuya","Coherent hot-electron emitter",,"Japanese Journal of Applied Physics",,"Vol. 44",,"pp. 64",2001,
"B. Y. Zhang,K. Furuya","Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopy",,"Applied Surface Science",,"Vol. 175-176",,"pp. 294",2001,
"M. Nagase,K. Furuya,N. Machida","Phase-braking effect appearing in the current-voltage characteristics of double- barrier resonant-tunneling diodes - Theoretical fitting over four orders of magnitude-",,"Japanese Journal of Applied Physics",,"Vol. 40",,"pp. 3018",2001,
"T. Arai,S. Yamagmi,Y. Miyamoto,K. Furuya","Reduction of base-collector capacitance in submicron InP/GaInAs heterojunction bipolar transistors with buried Tungsten wires",,"Japanese Journal of Applied Physics",,"Vol. 40",," L735",2001,
"N. Machida,H. Tamura,K. Furuya","Numerical simulation of hot electron interference in solid-state biprism",,"Springer Proceedings in Physics",,"Vol. 87",,"pp. 1723",2001,
"Y. Miyamoto,H. Oguchi,H. Nakamura,Y. Ninomiya,K. Furuya","80 nm periodical ohmic contacts toward Young's double slit experiment using a semiconductor",,"1st International Workshop on Quantum Nonplaner Nanostructures & Nanoelectronics, Tu-P31",,,,,2001,
"B. Zhang,K. Furuya,S. Karasawa","Theoretical ratio of hot electron current to thermal electron current in scanning hot electron microscopy",,"Journal of Applied Physics",,"Vol. 89",,"pp. 5516",2001,
"KAZUHITO FURUYA","Hot Electron Modulation by Buried Metal Gate Toward Metal/Semiconductor Quantum Nanostructure Devices",,"4th QNANO Workshop, Stockholm, June 13-15",,,,,2001,
"K. Furuya,M. Nagase,N. Machida","Phase Breaking Effects Seen in I-V Curves of Resonant Tunneling Diodes",,"Progress in Electromagnetic Research Symposium, Osaka, Japan",,,,,2001,
"前,柄沢,宮本,古屋","GaAs/AlAs/InGaP ショットキーコンタクト構造真空エミッタ",,"応用物理学会学術講演会",,"Vol. 13a-M-3",,,2001,
"M. Nagase,K. Furuya,N. Machida,M. Kurahashi","Current Peak Characteristics of Triple-Barrier Resonant-Tunneling Diodes with and without Phase Breaking",,"Japanese Journal of Applied Physics",,"Vol. 40","No. 12","pp. 6753-6760",2001,
"町田,古屋","半導体へテロ構造による電子波面広がり制御の可能性",,"電子情報通信学会全国大会",,"Vol. C-10-14",,,2001,
"永塚,町田,古屋","二重障壁共鳴トンネ ルダイオードによる電子位相コヒーレンスの温度特性評価の可能性",,"応用物理学会学術講演会",,"Vol. 14a-YB-8",,,2001,
"永瀬,町田,倉橋,古屋","位相相関法を用いた三重障壁共鳴トンネルダイオードの電流ピーク幅解析",,"応用物理学会学術講演会",,"Vol. 14a-YB-9",,,2001,
"町田,古屋","電子波デバイスの相反性",,"応用物理学会学術講演会",,"Vol. 14a-YB-11",,,2001,
"町田,古屋","走査探針による新しい固体電子波検出実験",,"電子情報通信学会全国大会",,"Vol. C-10-1",,,2001,
"L.-E. Wernersson,R. Yamamoto,E. Lind,I. Pietzonka,W. Seifert,Y. Miyamoto,K. Furuya,L. Samuelson","Attractive Potential around a Buried Metallic Gate in a Schottky Collector Hot Electron Transistor",,"28th International Symposium on Compound Semiconductors 2001 (ISCS2001), MoP-33",,,,,2001,
"K. Furuya,M. Nagase,N. Machida","Phase Breaking Effects Seen in I-V Curves of Resonant Tunneling Diodes",,"Progress in Electromagnetic Research Symposium (PIERS2001), 3P6b-4",,,,"pp. 401",2001,
"栗田昌尚,宮本恭幸,古屋一仁","GaInAs/AlAs/InP構造真空エミッタからの電子放出",,"第61回応用物理学会学術講演会",,"Vol. 6p-ZB-12",,,2000,
"M. Nagase,M. Suhara,Y. Miyamoto,K. Furuya","Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 6A","pp. 3314-3318",2000,
"M. Nagase,K. Furuya,N. Machida","Phase breaking effect appearing in I-V characteristics of double-barrier resonant tunneling diodes---Theoretical fitting over four orders of magnitudes---",,"Int'l Conf. on Solid State Devices and Materials, Sendai, Aug.2000",,"Vol. D-6-5",,,2000,
"B. Y. Zhang,K. Furuya","Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopy",,"Applied Surface Science(accepted for publication)",,"Vol. 00",,,2000,
"B. Y. Zhang,S. Karasawa,N. Sakai,Y. Miyamoto,K. Furuya","Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopy",,"10th International Conference on Solid Films and Surface, July 9-13, Princeton, USA",,,,,2000,
"B. Y. Zhang,Y. Ikeda,Y. Miyamoto,K. Furuya,N. Kikegawa","A versatile hot electron emitter of InGaAs/AlAs heterostructure with wide energy range at high current density",,"Physica",,"Vol. E7",,"pp. 851-854",2000,
"B. Hansson,N. Machida,K. Furuya,L. -E. Wernersson,L. Samuelson","Simulation of interference patterns in solid-state biprism devices",,"Solid-State Electron",,"Vol. 44","No. 9A","pp. 1275-1280",2000,
"N. Machida,K. Furuya","Numerical simulation of hot electron interference in a solid state biprism: Conditions for interference observation",,"J. Appl. Phys.",,"Vol. 88",,"pp. 2885-2891",2000,
"T. Arai,Y. Harada,S. Yamagami,Y. Miyamoto,K. Furuya","First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 6A","pp. L503-L505",2000,
"T. Arai,H. Tobita,Y. Harada,M. Suhara,Y. Miyamoto,K. Furuya","Toward nano-metal buried structure in InP - 20 nm wire and InP buried growth of tungsten",,"Physica E",,"Vol. 7","No. 3-4","pp. 896-901",2000,
"B. Gustafson,M. Suhara,K.Furuya,L. Samuelson,W. Seifert","Lateral current confinement in selectively grown resonant tunneling transistor with an embedded gate",,"Physica E",,"Vol. 7",,"pp. 819-822",2000,
"N. Sakai,K. Furuya,B. Y. Zhang,S. Karasawa","Theoretical relation between spatial resolution and efficiency of detection in scanning hot electron microscope",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 9A","pp. 5256-5260",2000,
"T. Arai,Y. Harada,S. Yamagami,Y. Miyamoto,K. Furuya","CBC reduction in GaInAs/InP buried metal heterojunction bipolar transistor",,"Twelfth International Conference on Indium Phosphide and Related Materials (IPRM'00)",,"Vol. TuB1.6",,,2000,
"T. Arai,H. Tobita,Y. Miyamoto,K. Furuya","GaAs buried growth over tungsten stripes using TEG and TMG",,"11th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XI)",,"Vol. Tu-A3",,,2000,
"Y. Miyamoto,M. Kurita,K. Furuya","Vacuum Microelectronic Electron Emitter by InP Double Barrier Diode Toward RFApplication",,"58th Annual Device Research Conference",,"Vol. III-5",,,2000,
"T. Arai,S. Yamagami,Y. Okuda,Y. Harada,Y. Miyamoto,K. Furuya","InP DHBT with 0.5mm Wide Emitter along <010> Direction toward BM-HBT with Narrow Emitter",,"Topical Workshop on Heterostructure Microelectronics (TWHM' 00)",,"Vol. Tue-3",,,2000,
"Y. Miyamoto,R. Yamamoto,H. Tobita,K. Furuya","Very shallow n-GaAs ohmic contact with 10nm thick GaInAs layer",,"19th Electronic Materials Symposium",,"Vol. B2",,,2000,
"新井俊希,原田恵充,山上滋春,宮本恭幸,古屋一仁","Buried Metal Heterojunction Bipolar Transistorにおけるベースコレクタ間容量の低減",,"第47回 応用物理学会関係連合講演会",,"Vol. 28a-ZA-3",,,2000,
"新井俊希,飛田洋,宮本恭幸,古屋一仁","TMGとTEGを材料としたタングステン細線 のGaAs OMVPE埋め込み成長",,"第47回応用物理学会関係連合講演会",,"Vol. 31a-P20-10",,,2000,
"小口博嗣,佐藤航一郎,宮本恭幸,古屋一仁","電子波干渉素子用GaInAs上80nm周期 電極の特性",,"第47回応用物理学会関係連合講演会",,"Vol. 30p-YD-1",,,2000,
"山上滋春,新井俊希,奥田慶文,宮本恭幸,古屋一仁","BMHBT微細化に向けた0.5μ ｍ幅エミッタInP系DHBTの作製と評価",,"第61回応用物理学会学術講演会",,"Vol. 3p-ZQ-3",,,2000,
"柄沢伸也,張 冰陽,阪井則雄,宮本恭幸,古屋一仁","走査型ホットエレクトロン顕 微鏡のためのホットエレクトロンエミッタ",,"第47回応用物理学会関係連合講演会",,"Vol. 29p-A-10",,,2000,
"張 冰陽,阪井則雄,柄沢伸也,古屋一仁","Estimation of Potential Profile and Hot Electron Transmission Through the air Gap from I-S Characteristics of STM",,"第47回応用物理学会関係連合講演会",,"Vol. 29p-A-8",,,2000,
"阪井則雄,張 冰陽,柄沢伸也,古屋一仁","走査型ホットエレクトロン顕微鏡における分解能と検出効率の関係",,"第47回応用物理学会関係連合講演会",,"Vol. 29p-A-9",,,2000,
"町田信也,古屋一仁","半導体／金属構造を用いた電子波干渉実験の提案",,"第47回応用物理学会関係連合講演会",,"Vol. 20p-YD-2",,,2000,
"町田信也,古屋一仁","固体バイプリズム中ホットエレクトロン波干渉の数値シミュレーション：干渉観測条件",,"第47回応用物理学会関係連合講演会",,"Vol. 20p-YD-3",,,2000,
"永瀬成範,古屋一仁,町田信也","位相破壊を採り入れた電子波共鳴特性の解析について",,"第47回応用物理学会関係連合講演会",,"Vol. 20p-YD-4",,,2000,
"張 冰陽,古屋一仁,柄沢伸也,平田朋彦","Hot electron current to thermal electron current ratio in scanning hot electron microscopy(SHEM)",,"第61回応用物理学会学術講演会",,"Vol. 5a-H-2",,,2000,
"柄沢伸也,張 冰陽,平田朋彦,古屋一仁","走査型ホットエレクトロン顕微鏡における検出可能な電流値の実験的評価",,"第61回応用物理学会学術講演会",,"Vol. 5a-H-3",,,2000,
"永瀬成範,倉橋将樹,古屋一仁","位相破壊を考慮した三重障壁共鳴トンネルダイオードの共鳴特性解析",,"第61回応用物理学会学術講演会",,"Vol. 6a-ZR-6",,,2000,
"町田信也,古屋一仁,岡田達也","コヒーレントホットエレクトロンエミッタ",,"第61回応用物理学会学術講演会",,"Vol. 6a-ZR-10",,,2000,
"N. Machida,H. Tamura,K. Furuya","Numerical Simulation of Hot Electron Interference in Solid-State Biprism",,"25th International Conference on the Physics of Semiconductors (ICPS25), M261",,,,"pp. 964",2000,
"Yasuyuki Miyamoto,Atsushi Kokubo,Hirotsugu Oguchi,Masaki Kurahashi and,KAZUHITO FURUYA","Fabrication and transport properties of 50-nm-wide Au/Cr/ GaInAs electrode for electron wave interference device",,"Applied Surface Science",,"Vol. 159-160","No. 1-4","pp. 179-185",2000,
"B. Y. Zhang,K. Furuya,Y. Ikeda,N. Kikegawa,M. Watanabe,T. Maruyama","Theoretical and Experimental Characterizations of Hot Electron Emission of n-Si/CaF2/Au Emitter Used in Hot Electron Detection Experiment",,"The 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11), Kyoto, Japan, July 19-23",,"Vol. ThP-18",,"pp. 182",1999,
"M. Suhara,L. -E. Wernersson,B. Gustafson,W. Seifert,L. Samuelson,K. Furu,KAZUHITO FURUYA","A Study of the Regrown Semiconductor Interface Including Patterned Metal Using Resonant Tunneling Structures Fabricated in the Overgrowth Process",,"7th International Conference on the Formation of Semiconductor Interfaces (ICFSI7), Goethenberg",,"Vol. 0Fr02",,"pp. 182",1999,
"M. Suhara,L. E. Wernersson,B. Gustafson,N .Carlsson,W. Seifert,A. Gustafson,J. O. Malm,A. Litwin,L. Samuelson an,KAZUHITO FURUYA","Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures",,"Jpn.J.Appl.Phys.",,"Vol. 38","No. 6A","pp. 3466-3469",1999,
"B. Y. Zhang,Y. Ikeda,K. Furuya,N. Kikegawa","Comparison between Fermi-Dirac and Boltzmann Methods for Band-bending Calculations of Si/CaF2/Au Hot Electron Emitter",,"Jpn. J. Appl. Phys.",,"Vol. 38","No. 4A","pp. 1905-1908",1999,
"B. Y. Zhang,K. Furuya,Y. Ikeda,N. Kikegawa","Design and experimental characteristics of n-Si/CaF2/Au hot electron emitter for use in scanning hot electron microscopy",,"Jpn. J. Appl. Phys.",,"Vol. 38","No. 8","pp. 4887-4892",1999,
"B. Y. Zhang,K. Furuya,Y. Ikeda,N. Kikegawa,M. Watanabe,T. Maruyama","Theoretical and experimental characterizations of hot electron emission of n-Si/CaF2/Au emitter used in hot electron detection experiment",,"Physica B",,"Vol. 272",,"pp. 425-427",1999,
"K. Furuya,Y. Miyamoto,N. Machida,T. Arai","Toward Quantum Devices of Metal/Semiconductor Structure",,"The 3rd Sweden-Japan International Workshop on Quantum Nanoelectronics",,,,"pp. 9",1999,
" N. Machida,K. Furuya","Analysis of Electron Coherence Effects in Solid-State Biprism Devices",,"The 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) Kyoto, Japan, July 19-23",," MoP-21",," 57",1999,
" B. Y. Zhang,Y. Ikeda,Y. Miyamoto,K. Furuya,N. Kikegawa","A Versatile Hot Electron Emitter of InGaAs/AlAs Heterostructure with Wide Energy Range at High Current Density",,"The 9th International Conference on Modulated Semiconductor Structures (MSS9), Fukuoka, Japan, July 12-16",," N13",," 279",1999,
"B. Gustafson,M. Suhara,K. Furuya,L. Samuelson,W. Seifert,L. E. Werners","Lateral Quantum Confinement in Selectively Grown Resonant Tunneling Transistor with an Embedded Gate",,"The 9th International Conference on Modulated Semiconductor Structures (MSS9), Fukuoka, Japan, July 12-16",," G09",," 128",1999,
"Y. Miyamoto,A. Kokubo,H. Oguchi,M. Kurahashi,K. Furuya","Anomalous Current in 50 nm width Au/Cr/GaInAs Electrode for electron wave interference device",,"Third International Symposium on Control of Semiconductor Interface, A5-6",,,,,1999,
"N. Machida,K. Furuya","Analysis of Phase-Breaking Effects in Triple-Barrier Resonant-Tunneling Diodes",,"Jpn. J. Appl. Phys.",,"Vol. 38","No. 7A","pp. 4017-4020",1999,
"N. Machida,K. Furuya","Analysis of Electron Incoherence Effects in Solid-State Biprism Devices",,"Physica B",,"Vol. 272",,"pp. 82-84",1999,
"L. E. Wernersson,M. Suhara,N .Carlsson,K. Furuya,B. Gustafson,A. Litwin,L. Samuelson,W. Seifert","Lateral confinement in a resonant tunneling transistor with a buried metallic gate",,"Appl. Phys. Lett.",,"Vol. 74","No. 2","pp. 311-313",1999,
"Y. Miyamoto,H. Tobita,K. Oshima,K. Furuya","Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE",,"Solid-State Electronics",,"Vol. 43",,"pp. 1395-1398",1999,
"N. Kikegawa,B. Y. Zhang,Y. Ikeda,N. Sakai,K. Furuya,M. Asada,M. Wanatabe,W. Saito","Shortening of detection time for observation of hot electron spatial distribution by scanning hot electron microscopy",,"Jpn. J. Appl. Phys.",,"Vol. 38","No. 4A","pp. 2108-2113",1999,
"A. Kokubo,T. Hattori,H. Hongo,M. Suhara,Y. Miyamoto,K. Furuya","25nm pitch GaInAs/InP buried structure by calixarene resist",,"Jpn. J. Appl. Phys.",,"Vol. 37","No. 7A","pp. L827-L829",1998,
"Y. Miyamoto,A. Kokubo,T. Hattori,H. Hongo,M. Suhara,K. Furuya","25nm ptich GaInAs/InP buried structure:improvement by calixarene as EB resist ane TBP as P-source in OMVPE regrowth",,"J. Vac. Sci. Technol.",,"Vol. B16","No. 12",,1998,
"N. Kikegawa,K. Furuya,F. Vazuqez,Y. Ikeda","Characteristics and reduction of noise in scanning hot electron microscope",,"Jpn. J. Appl. Phys.",,"Vol. 37","No. 12",,1998,
"N. Machida,B. Hansson,K. Furuya,L. Wernersson,L. Samuelson","Proposal for a solid state biprism device",,"Jpn. J. Appl. Phys.",,"Vol. 37","No. 8","pp. 4311-4315",1998,
"T. Oobo,R. Takemura,K. Sato,M. Suhara,Y. Miyamoto,K. Furuya","Effect of space layer thickness in energy level width narrowing in GaInAs/InP resonant tunneling diodes grown by OMVPE",,"Jpn. J. Appl. Phys.",,"Vol. 37","No. 2","pp. 445-449",1998,
"H. Hongo,Y. Miyamoto,J. Suzuki,M. Suhara,K. Furuya","Wrapped alignment mark for fabrication of interference/diffraction hot electron devices",,"Jpn. J. Appl. Phys.",,"Vol. 37","No. 3B","pp. 1518-1521",1998,
"Y. Miyamoto,J. Yoshinaga,H. Toda,T. Arai,H. Hongo,T. Hattori,A. Kokubo,K. Furuya","Submicron GaInAs/InP hot electron transistors by EBL process and size dependence of current gain",,"Solid State Electronics",,"Vol. 42","No. 7-8","pp. 1467-1470",1998,
"古屋一仁","エンサイクロペディア電子情報通信ハンドブック（副幹事長，分担）",,"オーム社","オーム社",,,,1998,
"H.Hongo H.Tanaka,Y.Miyamoto,T.Otake,J.Yoshinaga,K.Furuya","Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs toward hot electron interference/diffraction devices",," Microelectronic Engineering",,"Vol. 35",,"pp. 241-244",1997,
"M.Suhara,C.Nagao,H.Honji,Y.Miyamoto,K.Furuya,R.Takemura","Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes",,"J.Cryst.Growth",,"Vol. 179","No. 1","pp. 18-25",1997,
"D.Kobayashi,K.Furuya,N.Kikegawa,F.Vazquez","Estimation of lateral resolution in scanning hot electron microscope",,"Jpn.J.Appl.Phys",,"Vol. 36","No. 7A","pp. 1172-1173",1997,
"T.Oobo,R.Takemura,M.Suhara,Y.Miyamoto,K.Furuya","High Peak to Valley Current Ratio GaInAs/GaInP Resonant Tinneling Diodes",,"Jpn.J.Appl.Phys.",,"Vol. 36","No. 8","pp. 5079-5080",1997,
"H.Hongo,Y.Miyamoto,M.Gault,K.Furuya","Influence of a finite energy width in electron distribution to an experiment of hot electron double-slit interference - a design of the emitter structure",,"J. Appl. Phys.",,"Vol. 82","No. 8","pp. 3846-3852",1997,
"H.HongoY.Miyamoto,M.Suhara,K.Furuya","A 40nm pitch double slit experiment of hot electrons in a semiconductor under a magnetic field",,"Appl.Phys.Lett.",,"Vol. 70",,"pp. 93-95",1997,
"R.Takemura M.Suhara,T.Oobo,Y.Miyamoto,K.Furuya","High-temperature estimation of phase coherent length of hot electron using GaInAs/InP triple-barrier resonant tunneling diodes grown by OMVPE",," Jpn.J.Appl.Phys.",,"Vol. 36",,"pp. 1846-1848",1997,
"H. Hongou,Y. Miyamoto,M. Suhara,K. Furuya","Hot electron interference by 40nm-pitch double slit buried in semiconductor",," Microelectronic Engineering",,"Vol. 35",,"pp. 337-340",1997,
"服部哲也,本郷廣生,宮本恭幸,古屋一仁,松沼 健司,渡辺正裕,浅田雅洋","電子ビーム露光によるCaF2無機レジスト70nm周期パターニング","第43回応用物理学会関係連合講演会",,," 26a-SZW-27"," 2"," 565",1996,Mar.
"R.Takemura,M.Suhara,Y.Miyamoto,K.Furuya,Y.Nakamura","Current-voltage characteristics of triple-barrier resonant tunneling diodes including coherent and incoherent tunneling process",," IEICE of Jpn.",,"Vol. E79-C",,"pp. 1525-1529",1996,
"Y. C. Kang,M. Suhara,K. Furuya,M. Gault,R. Takemura","Undoped spacer layer effects on the evaluation on the coherent length in GaInAs/InP resonant tunneling diodes",," Physica B",,"Vol. 227",,"pp. 210-212",1996,
"H. Hongo T. Hattori,Y. Miyamoto,K. Furuya,K. Matsunuma,M. Watanabe,M. Asada","Seventy nm pitch patterning on CaF2 by e-beam exposure: An inorganic resist and a contamination resist",,"Jpn. J. Appl. Phys.",,"Vol. 35","No. 12",,1996,
"Vazquez K. Furuya,D. Kobayashi","Proposal of a technique to detect subsurface hot electrons with a scanning probe microscope",," Jpn. J. Appl. Phys.",,"Vol. 35",,"pp. 1306-1310",1996,
"F. Vazquez K. Furuya,D. Kobayashi","Detecting subsurface hot electrons with a scanning probe microscope",,"J. Appl. Phys.",,"Vol. 79","No. 2","pp. 651-655",1996,
"KAZUHITO FURUYA","Detection of hot electron current with scanning hot electron microscopy",,"Appl. Phys. Lett.",,"Vol. 68","No. 15","pp. 2196",1996,
"H. Hongo,H. Tanaka,Y. Miyamoto,J. Yoshinaga,K. Furuya","Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs",,"Jpn. J. Appl. Phys.",,"Vol. 35","No. 8A","pp. 964-967",1996,
"F. Vazquez,K. Furuya,D. Kobayashi","Possibility of hot electron detection with a scanning probe microscope",," Physica B",,"Vol. 227",,"pp. 282-286",1996,
"N. Machida,K. Furuya,M. Gault","Theoretical study of resonant tunneling diodes with impurity ions located in wells",," Jpn. J. Appl. Phys.",,"Vol. 35",,"pp. 4232-4237",1996,
"H. Hongo J. Suzuki,M. Suhara,Y. Miyamoto,K. Furuya","Nanostructure alignment for hot electron interference/diffraction devices",,"Jpn. J. Appl. Phys.",,"Vol. 34","No. 8B","pp. 4436-4438",1995,
"M. Gault H. Matsuura,K. Furuya,P. Mawby,M. S. Towers","The inclusion of a finite scattering time in the simulation of quantum effect devices",,"Solid State Electronics",,"Vol. 38",,"pp. 9-15",1995,
"H. Matsuura K. Furuya","Wavefront spread of hot electrons generated by planar tunnel emitters",,"Jpn. J. Appl. Phys.",,"Vol. 34","No. 7A","pp. 3589-3592",1995,
"Y.C.Kang M.Suhara,K.Furuya,R.Koizumi","Evaluation of hot electron coherent length using well width dependence of the resonance characteristics of resonant tunneling diodes",," Jpn.J.Appl.Phys.",,"Vol. 34",,"pp. 4417-4419",1995,
"M.Suhara,R. Takemura,K.Furuya","Possibility of high-temperature evaluation of phase coherent length of hot electrons in triple-barrier resonant tunneling diodes",," Jpn.J.Appl.Phys. - ()",,"Vol. 34",,"pp. 4452-4454",1995,
"M. Suhara,Y. Miyamoto,H. Hongo,J. Suzuki,K. Furuya","GaInAs/InP organometallic vapor phase epitaxy regrowth for ultrafine buried heterostructures with 50nm pitch toward electron wave devices",,"J. Crystal Growth",,"Vol. 145",,"pp. 698-701",1994,
"K. Furuya,N. Machida,Y. C. Kang","Analysis of phase breaking effect in resonant tunneling diodes using correlation function",,"Jpn. J. Appl. Phys.",,"Vol. 33",,"pp. 2511-2512",1994,
"末松,古屋一仁","レンズ状媒質に沿うビーム波のベクトル解析",,"電子通信学会論文誌",,"Vol. 54-B","No. 6","pp. 631-639",1994,
"古屋一仁","電子波干渉とデバイス化の可能性",,"電気学会誌",,"Vol. 114",,"pp. 376-379",1994,