""Y. Wu","H. Hasegawa","K. Kakushima","K. Ohmori","T. Watanabe","A. Nishiyama","N. Sugii","H. Wakabayashi","K. Tsutsui","Y. Kataoka","K. Natori","K. Yamada","H. Iwai"","A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability",,"Microelectronics Reliability",,"Vol. 54","No. 5","pp. 899-904",2014,May
"Y. Wu,Hiroki Hasegawa,Kuniyuki KAKUSHIMA,大毛利健治,T. Watanabe,Hitoshi Wakabayashi,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,片岡好則,Kenji Natori,Keisaku Yamada,HIROSHI IWAI","Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance","2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY-",,,,,,2014,
"Y. Wu,竇春萌,F. Wei,Kuniyuki KAKUSHIMA,大毛利健治,パールハットアヘメト,T. Watanabe,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,Keisaku Yamada,片岡好則,takeo hattori,HIROSHI IWAI","Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability",,"Japanese Journal of Applied Physics",,"Vol. 52","No. 4S","pp. 04CC28-1-04CC28-5",2013,Apr.
"小山将央,Naoto Shigemori,Kenji Ozawa,Kiichi Tachi,Kuniyuki KAKUSHIMA,O. Nakatsuka,大毛利健治,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Keisaku Yamada,HIROSHI IWAI","Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source","41st European Solid-State Device Research Conference",,,,,,2013,
"宋  ?漢,小山将央,Kazuki Matsumoto,Kuniyuki KAKUSHIMA,中塚理,大毛利健治,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Keisaku Yamada,HIROSHI IWAI","Atomically flat Ni-silicide/Si interface using NiSi2 sputtering","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"W. Feng,R. Hettiarachchi,Soshi Sato,Kuniyuki KAKUSHIMA,M. Niwa,HIROSHI IWAI,Keisaku Yamada,Kenji Ohmori","Advantages of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties",,"Japanese Journal of Applied Physics",,"Vol. 51",,"pp. 04DC06-1-04DC06-5",2012,Apr.
"大毛利健治,W. Feng,R. Hettiarachchi,Yeonghun Lee,Soshi Sato,Kuniyuki KAKUSHIMA,M. Sato,K. Fukuda,M. Niwa,K. Yamabe,Kenji Shiraishi,HIROSHI IWAI,Keisaku Yamada","Low-frequency noise reduction in Si Nanowire MOSFETs","ECS 221st Meeting","ECS Transactions",,"Vol. 45","No. 3","pp. 437-442",2012,
"大毛利健治,W. Feng,R. Hettiarachchi,Yeonghun Lee,Soshi Sato,Kuniyuki KAKUSHIMA,M. Sato,K. Fukuda,M. Niwa,K. Yamabe,Kenji Shiraishi,HIROSHI IWAI,Keisaku Yamada","Low-frequency noise reduction in Si Nanowire MOSFETs","ECS 221st Meeting","ECS Transactions",,"Vol. 45","No. 3","pp. 437-442",2012,
"大毛利健治,W. Feng,R. Hettiarachchi,Yeonghun Lee,Soshi Sato,Kuniyuki KAKUSHIMA,M. Sato,K. Fukuda,M. Niwa,K. Yamabe,Kenji Shiraishi,HIROSHI IWAI,Keisaku Yamada","Low-frequency noise reduction in Si Nanowire MOSFETs","ECS 221st Meeting","ECS Transactions",,"Vol. 45","No. 3","pp. 437-442",2012,
"櫻井蓉子,大毛利健治,Keisaku Yamada,Kuniyuki KAKUSHIMA,T. Tayagaki,HIROSHI IWAI,Y. Kanemitsu,K. Asakawa,Kenji Shiraishi,S. Nomura","Photoluminescence Properties of Si Nanolayers and Si Nanowires","Tsukuba Nanotechnology Symposium 2012(TNS’12)",,,,,,2012,
"Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure",,"Solid-State Electronics",,"Vol. 65-66",,"pp. 2-8",2011,Nov.
"Soshi Sato,Kuniyuki KAKUSHIMA,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Electrical characteristics of asymmetrical silicon nanowire field-effect transistors",,"APPLIED PHYSICS LETTERS",,"Vol. 99","No. 22","pp. 223518-1-3",2011,Nov.
"Soshi Sato,Wei Li,Kuniyuki KAKUSHIMA,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Eatraction of additional interfacial states of silicon nanowire field-effect transistors",,"APPLIED PHYSICS LETTERS",,"Vol. 98",,,2011,June
"Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors",,"Microelectronics Reliability",,"Vol. 51",,"pp. 879-884",2011,May
"HIROSHI IWAI,KENJI NATORI,Kenji Shiraishi,岩田 潤一,押山  淳,Keisaku Yamada,Kenji Ohmori,Kuniyuki KAKUSHIMA,Ahmet Parhat","Si nanowire FET and its modeling",,"Science China",,"Vol. 54","No. 5","pp. 1004-1011",2011,May
"Soshi Sato,Kenji Ohmori,Kuniyuki KAKUSHIMA,Ahmet Parhat,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Experimental Characterization of Quasi-Fermi Pontential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry",,"Applied Physics Express",,"Vol. 4","No. 044201",,2011,Apr.
"Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Structural Effects of Channel Cross-section on a Gate Capacitance of Silicon Nanowire Field-Effect Transistors","CSTIC2011",,,,,,2011,
"Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Influence of the cross-sectional shape for Si nanowire FETs",",Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"W. Feng,R. Hettiarachchi,Soshi Sato,Kuniyuki KAKUSHIMA,M. Niwa,HIROSHI IWAI,Keisaku Yamada,Kenji Ohmori","Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties","2011 International Conference on Solid State Devices and Materials(SSDM 2011)",,,,,,2011,
"Kenji Ohmori,W. Feng,Soshi Sato,R. Hettiarachchi,M. Sato,T. Matsuki,Kuniyuki KAKUSHIMA,HIROSHI IWAI,Keisaku Yamada","Direct Real-Time Observation of Channel Potential Fluctuation, Correlated to Random Telegraph Noise of Drain Current Using Nanowire MOSFETs with Four-Probe Terminals","2011 Symposium on VLSI Technology",,,,,,2011,
"フェン ウェイ,ヘッティアーラッチ・ランガ,佐藤創志,角嶋邦之,M.Niwa,岩井洋,山田啓作,大毛利健二","Advantages of Silicon Nanowire MOSFETs over Planar MOSFETs Investigated from the Aspect of Drain-Current Noise","第72回応用物理学会学術講演会",,,,,,2011,
"大毛利健二,フェン ウェイ,佐藤創志,ヘッティアーラッチ・ランガ,佐藤 基之,松木 武雄,角嶋邦之,岩井洋,山田啓作","ドレイン電流のランダムテレグラフノイズに相関したFETチャネルポテンシャル揺らぎの実時間直接観測","第72回応用物理学会学術講演会",,,,,,2011,
"佐藤創志,角嶋邦之,パールハットアヘメト,大毛利健治,名取研二,山田啓作,岩井洋","Effects of corners of channel cross-section on electrical performance of silicon nanowire field-effect transistors","ゲートスタック研究会?材料･プロセス・評価の物理?（第16回研究会）",,,,,,2011,
"櫻井 蓉子,大毛利健治,Keisaku Yamada,Kenji Shiraishi,Kuniyuki KAKUSHIMA,HIROSHI IWAI,S. Nomura","Photoluminescence Characterization of the Interface Properties of Si Nanolayers and Nanowires","ECS 220th Meeting",,,,,,2011,
"Y. Wu,Kuniyuki KAKUSHIMA,大毛利健治,Akira Nishiyama,HIROSHI IWAI,Keisaku Yamada","A Study on Fabrication and Analytic Modeling of novel Schottky contact tunneling Transistors","Tsukuba Nanotechnology Symposium(TNS’11)",,,,,,2011,
"T. Nakayama,Kuniyuki KAKUSHIMA,O. Nakatsuka,Y. Machida,S. Sotome,T. Matsuki,Kenji Ohmori,HIROSHI IWAI,S. Zaima,知京豊裕,Kenji Shiraishi,Keisaku Yamada","Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature","2010 IEDM",,,,,,2010,Dec.
"Soshi Sato,Yeonghun Lee,Kuniyuki KAKUSHIMA,Ahmet Parhat,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Gate Semi-Around Si Nanowire FET Fabricated by Conventional CMOS Process with Very High Drivability","ESSDERC 2010, 40th European Solid-State Device Research Conference",,,,,,2010,Sept.
"角嶋邦之,小柳友常,来山大祐,幸田みゆき,宋在烈,佐藤創志,川那子高暢,M. マイマイティ,舘喜一,M.K. Bera,パールハットアヘメト,野平博司,筒井一生,西山彰,杉井信之,名取研二,服部健雄,山田啓作,岩井洋","LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御","応用物理学会分科会 シリコンテクノロジー","，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）",,,"No. 127","pp. 4-8",2010,July
"佐藤創志,角嶋邦之,パールハットアヘメト,大毛利健二,名取研二,岩井洋,山田啓作","キャリア移動度評価によるシリコンナノワイヤトランジスタの電気特性解析",,"電子情報通信学会技術研究報告 pp.11-16",,,,,2010,June
"Kuniyuki KAKUSHIMA,Tomotsune Koyanagi,来山大祐,Miyuki Kouda,Jaeyeol Song,Takamasa Kawanago,M. Mamatrishat,Kiichi Tachi,M. K. Bera,Ahmet Parhat,Hiroshi Nohira,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,Keisaku Yamada,HIROSHI IWAI","Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability","2010 Symposium on VLSI Technology",,,,,,2010,June
"佐藤創志,新井英朗,角嶋邦之,パールハットアヘメト,大毛利 健治,名取研二,岩井洋,山田啓作","Siナノワイヤトランジスタの電気特性の断面形状依存症","第57回応用物理学関係連合講演会","第57回応用物理学関係連合講演会講演予稿集",,,,"pp. 13-270",2010,Apr.
"佐藤創志,角嶋邦之,パールハットアヘメト,大毛利健治,山田啓作,名取研二,岩井洋","Influence of the cross-sectional shape for Si nanowire FETs","複合創造領域シンポジウム",,,,,,2010,
"Miyuki Kouda,Naoto Umezawa,Kuniyuki KAKUSHIMA,Hiroshi Nohira,Ahmet Parhat,Kenji Shiraishi,知京豊裕,Keisaku Yamada,HIROSHI IWAI","Charged defects reduction in gate insulator with multivalent materials","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.
"Soshi Sato,Hideyuki Kamimura,Hideaki Arai,Kuniyuki KAKUSHIMA,Ahmet Parhat,Kenji Ohmori,Keisaku Yamada,HIROSHI IWAI","High-Performance Si Nanowire FET with a Semi Gate-Around Structure Suitable for Integration","ESSDERC 2009, 39th European Solid-State Device Research Conference",,,,,"p. 249",2009,Sept.
"Miyuki Kouda,Kuniyuki KAKUSHIMA,Naoto Umezawa,Ahmet Parhat,Kenji Shiraishi,Toyohiro Chikyow,Keisaku Yamada,HIROSHI IWAI","Charged defects reduction in gate insulator with multivalent materials","2009 Symposium on VLSI Technology","2009 Symposium on VLSI Technology Digest of Technical Papers","VLSI Technology",,,"pp. 200-201",2009,June
"岩井洋,名取研二,白石賢二,山田啓作,大毛利健二,筒井一生,角嶋邦之,パールハットアヘメト","シリコンナノワイヤFET研究の現状とロードマップ作成の考え方","第56回応用物理学関係連合講演会","第56回応用物理学関係連合講演会予稿集","応用物理学会",,"No. 0","pp. 155",2009,Mar.
"岩井洋,山田啓作,大毛利健二,筒井一生,角嶋邦之,パールハットアヘメト,佐藤創志,上村英之,新井英朗","トップダウンSiナノワイヤFETの作製法とその電気的特性のサーベイ","第56回応用物理学関係連合講演会","第56回応用物理学関係連合講演会予稿集","応用物理学会",,"No. 0","pp. 147",2009,Mar.
"佐藤創志,上村英之,新井英朗,角嶋邦之,パールハットアヘメト,大毛利健二,筒井一生,杉井信之,服部健雄,山田啓作,岩井洋","四端子測定TEGを用いたSiナノワイヤトランジスタのチャネル内電位の測定","第56回応用物理学関係連合講演会","第56回応用物理学関係連合講演会予稿集","応用物理学会",,"No. 2","pp. 901",2009,Mar.
"幸田みゆき,梅澤直人,角嶋邦之,パールハットアヘメト,白石賢二,知京豊裕,山田啓作,岩井洋,服部健雄","低電子揺動Ce酸化物を利用したhigh?k膜中の固定電荷の抑制","応用物理学会 薄膜･表面物理分科会/シリコンテクノロジー分科会共催特別研究会 ゲートスタック研究会?材料･プロセス・評価の物理?（第14回研究会）","ゲートスタック研究会?材料･プロセス・評価の物理?（第14回研究会）","ゲートスタック研究会",,,"pp. 21",2009,Jan.
"佐藤創志,上村英之,新井英朗,大毛利健二,角嶋邦之,パールハットアヘメト,筒井一生,服部健雄,杉井信之,山田啓作,岩井洋","Si Finのアスペクト比最適化により作製した円形Siナノワイヤの形状に関する研究","秋季第69回応用物理学会学術講演会","秋季第69回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 735",2008,Sept.
"Naoto Umezawa,Kenji Shiraishi,Kuniyuki KAKUSHIMA,Kenji Ohmori,Keisaku Yamada,知京豊裕,HIROSHI IWAI","Relation between solubility of silicon in high-k oxides and the effect of Fermi level pinning","ECS 213th Meeting",,,,,,2008,May
"Kentaro Doi,Yutaka Mikazuki,Shinya Sugino,Tatsuki Doi,Pawel Szarek,Masato Senami,Kenji Shiraishi,HIROSHI IWAI,Naoto Umezawa,知京豊裕,Keisaku Yamada,Akitomo Tachibana","Electronic structure study of local dielectric properties of lanthanoid oxide, clusters",,"JAPANESE JOURNAL OF APPLIED PHYSICS",,"Vol. 47",,"pp. 205-211",2008,Jan.