"Ahmet Parhat,���쌒���Y,Kuniyuki KAKUSHIMA,Hiroshi Nohira,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack",,"Microelectronics Reliability",,"Vol. 48",,"pp. 1769?1771",2008,