"Wei Li,’†“‡ˆκ—T,Kuniyuki KAKUSHIMA,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Extraction of Interface State Density of 3-dimensional Si channel","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"’†“‡ˆκ—T,Wei Li,Kuniyuki KAKUSHIMA,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,Akira Nishiyama,™ˆδM”V,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface state density measurements of 3D silicon channel by charge pumping method","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by Worldfs Leading Scientists",,,,,,2013,
"’†“‡ˆκ—T,Wei Li,Kuniyuki KAKUSHIMA,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,Akira Nishiyama,™ˆδM”V,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface state density measurements of 3D silicon channel by charge pumping method","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by Worldfs Leading Scientists",,,,,,2013,
"’†“‡ˆκ—T,Soshi Sato,Kuniyuki KAKUSHIMA,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method","ECS 220th Meeting","ECS Transactions",,"Vol. 41","No. 7","pp. 293-298",2013,
"’†“‡ˆκ—T,Soshi Sato,Kuniyuki KAKUSHIMA,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method","ECS 220th Meeting","ECS Transactions",,"Vol. 41","No. 7","pp. 293-298",2013,
"Wei Li,’†“‡ˆκ—T,⅏t–G,Kuniyuki KAKUSHIMA,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,•Π‰ͺD‘₯,Kenji Natori,takeo hattori,HIROSHI IWAI","Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method","CSTIC 2012",,,,,,2012,
"’†“‡ˆκ—T,Wei Li,Kuniyuki KAKUSHIMA,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface state density measurements of 3D silicon channel by charge pumping method","[550]	K. Nakajima, W. Li, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, gInterface state density measurements of 3D silicon channel by charge pumping methodh, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"’†“‡ˆκ—T,Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Interface State Density Measurement of Three Dimensional Silicon Structures by Charge Pumping Method","Taiwan-Japan Workshop on gNano Devicesh",,,,,,2011,
"’†“‡ ˆκ—T,²“‘‘nŽu,Šp“ˆ–M”V,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,“›ˆδˆκΆ,ΌŽR²,™ˆδM”V,–ΌŽζŒ€“ρ,•ž•”Œ’—Y,Šβˆδ—m","ƒ`ƒƒ[ƒWƒ|ƒ“ƒsƒ“ƒO–@‚Ι‚ζ‚ι—§‘ΜSi\‘’‚ΜŠE–ʏ€ˆΚ–§“x‚Μ•]‰Ώ","‘ζ‚V‚P‰ρ‰ž—p•¨—Šw‰οŠwpu‰‰‰ο",,,,,,2010,Sept.
"’†“‡ˆκ—T,²“‘‘nŽu,Šp“ˆ–M”V,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,“›ˆδˆκΆ,ΌŽR²,™ˆδM”V,–ΌŽζŒ€“ρ,•ž•”Œ’—Y,Šβˆδ—m","Interface state density of 3-D structured Si using charge pumping method","•‘‡‘n‘’—ΜˆζƒVƒ“ƒ|ƒWƒEƒ€",,,,,,2010,