""J. Chen","H. Wakabayashi","K. Tsutsui","H. Iwai","K. Kakushima"","Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current",,"Microelectronic Reliability",,"Vol. 63",,"pp. 52-55",2016,Aug.
"Jiangning Chen","A study on AlGaN/GaN HEMT gate stacks for threshold voltage control and leakage current suppression",,,,,,,2016,June
"Jiangning Chen","A study on AlGaN/GaN HEMT gate stacks for threshold voltage control and leakage current suppression",,,,,,,2016,June
"Jiangning Chen","A study on AlGaN/GaN HEMT gate stacks for threshold voltage control and leakage current suppression",,,,,,,2016,June
""J. Chen","T. Kawanago","H. Wakabayashi","K. Tsutsui","H. Iwai","D. Nohata","H. Nohira","K. Kakushima"","La2O3 gate dielectrics for AlGaN/GaN HEMT",,"Microelectronics Reliability",,"Vol. 60",,"pp. 16-19",2016,
"Jiangning Chen,Kuniyuki KAKUSHIMA,•Ð‰ª�D‘¥,�¼ŽR�²,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI,âV“¡�Â","Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"’Â�]”J,Šp“ˆ–M”V,•Ð‰ª�D‘¥,�¼ŽR�²,�™ˆä�M”V,Žá—Ñ�®,“›ˆäˆê�¶,–¼ŽæŒ¤“ñ,Šâˆä—m,âV“¡�Â","La2O‚RƒQ�[ƒg�â‰�–Œ‚ð—p‚¢‚½AlGaN/GaNƒfƒoƒCƒX‚̃vƒ�ƒZƒXˆË‘¶�«","‘æ61‰ñ‰ž—p•¨—�Šw‰ï�t‹GŠw�p�u‰‰‰ï",,,,,,2014,
"Jiangning Chen,Ž­ �‘‹­,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,•Ð‰ª�D‘¥,�¼ŽR�²,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Jiangning Chen,Ž­ �‘‹­,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,•Ð‰ª�D‘¥,�¼ŽR�²,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Jiangning Chen,Ž­ �‘‹­,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,•Ð‰ª�D‘¥,�¼ŽR�²,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Kana Tsuneishi,Jiangning Chen,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,•Ð‰ª�D‘¥,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","A Robust Ohmic Contact Process for AlGaN/GaN using Ti-silicide electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Jiangning Chen,Kana Tsuneishi,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,•Ð‰ª�D‘¥,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 3","pp. 353-357",2012,
"Kana Tsuneishi,Jiangning Chen,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,•Ð‰ª�D‘¥,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure","ECS 222nd Meeting, ECS Transactions, Vol.50, No.3, pp., October 11, 2012,","ECS Transactions",,"Vol. 50","No. 3","pp. 447-450",2012,
"Jiangning Chen,Kana Tsuneishi,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,•Ð‰ª�D‘¥,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 3","pp. 353-357",2012,