"Kunihiro Suzuki,Tetsu Fukano,Tatsuya Yamazaki,Shinpei Hijiya,Takashi Ito,Hajime Ishikawa","Pseudo-HBT with Polysilicon Emitter Contact and an Ultra shallow Highly Doped Base by Photoepitaxy","Tech. Dig. of, IEDM","Tech. Dig. of, IEDM",,,,"pp. 811-813",1998,
"Yoshihiro Arimoto,Shinpei Hijiya,Takashi Ito","Advanced Bipolar and MOS  Devices Based on Silicon Wafer-Bonding","Proc. 1st. Int. Symp. on Semicon. Wafer Bonding, ECS","Proc. 1st. Int. Symp. on Semicon. Wafer Bonding, ECS",,,,"pp. 414-426",1992,
"Yasuhisa Sato,Rinshi Sugino,Masaki Okuno,Nobuo Kikuchi,Junichi Teramae,Akinao Ogawa,Shinpei Hijiya,Takashi Ito","Photo-Excited Dry Cleaning for ULSI","Proc. of VLSI Symp. on Tech. System and Application","Proc. of VLSI Symp. on Tech. System and Application",,,,,1991,
"Shinpei Hijiya,Takashi Ito,Tetsuo Nakamura","A High-Speed Write/Erase EAROM Cell",,"FUJITSU SCIENTIFIC & TECHNICAL JOURNAL","Fijitsu","Vol. 20","No. 4","pp. 535-545",1984,Dec.
"土屋真平,伊藤隆司,中村哲夫","傾斜したバンドギャップを持つ高速EAROMセル",,"電子通信学会論文誌","電子通信学会","Vol. J67-C","No. 6","pp. 505-512",1984,June
"Shinpei Hijiya,Takashi Ito,Tetsuo Nakamura,Hajime Ishikawa,Hideki Arakawa","A Nitride Barrier Avalanche Injection EAROM","ISSCC Dig. of Tech. Papers","ISSCC Dig. of Tech. Papers",,,,"pp. 116-117",1982,
"Shinpei Hijiya,Takashi Ito,Tetsuo Nakamura,Hajime Ishikawa,Hideki Arakawa","A Nitride Barrier Avalanche Injection EAROM",,"IEEE Journal of Solid-State Circuits","IEEE Solid-State Circuits Society","Vol. SC-17","No. 5","pp. 852-856",1982,
"Shinpei Hijiya,Takashi Ito,Masaichi Shinoda","Dual Dielectric Nonvolatile Memory Cells with Thermally Grown Silicon Nitride Films",,"Fujitsu Scientific and Technical Journal.","Fujitsu Ltd.","Vol. 16","No. 3","pp. 115-121",1980,Sept.
"Shinpei Hijiya,Takashi Ito,Tetsuo Nakamura,Nobuo Toyokura,Hajime Ishikawa","Electrically Alterable Read Only Memory Cell with Graded Energy Band-Gap Insulator","Tech. Dig. of IEDM","Tech. Dig. of IEDM",,,,"pp. 590-593",1980,
"Takashi Ito,Shinpei Hijiya,Takao Nozaki,Hideki Arakawa,Masaichi Shinoda","Low Voltage Alterable EAROM Cells with Nitride-Barrier Avalanche Injection MIS(NAMIS)",,"IEEE TRANSACTIONS ON ELECTRON DEVICES","IEEE Electron Devices Society","Vol. ED-26","No. 6","pp. 906-913",1979,
"Takashi Ito,Shinpei Hijiya,Takao Nozaki,Hideki Arakawa,Masaichi Shinoda,Yukio Fukukawa","Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with Nitrogen",,"Journal of The Electrochemical Society","The Electrochemical Society","Vol. 125","No. 3","pp. 448-452",1979,
"Takashi Ito,Shinpei Hijiya,Hidetoshi Nishi,Masaichi Shinoda,Toshio Furuya","Interfacial Doping by Recoil Implantation for Nonvolatile Memories",,"Japanese Journal of Applied Physics. Supplement","The Japan Society of Applied Phisics","Vol. 17-1",,"pp. 201-206",1978,
"Takashi Ito,Shinpei Hijiya,Hajime Ishikawa,Masaichi Shinoda","0V Write/Erase EAROM Cells with Directly Nitrided Silicon Nitride Films as First  Insulating Layers","Tech. Dig. of IEDM","Tech. Dig. of IEDM",,,,"pp. 284-286",1977,
"Takashi Ito,Shinpei Hijiya,Hidetoshi Nishi,Masaichi Shinoda,Toshio Furuya","Interfacial Doping by Recoil Implantation for Nonvolatile Memories","Ext. Abs. on 9th Conf: on SSDM","Ext. Abs. on 9th Conf: on SSDM",,,,"pp. 61-62",1977,
"Takashi Ito,Takao Nozaki,Hideki Arakawa,Shinpei Hijiya,Masaichi Shinoda,Yukio Fukukawa","Thermally Nitrided Silicon Films By Direct Reaction","Abs. of 150th ECS Fall Meeting","Abs. of 150th ECS Fall Meeting",,,,"p. 310",1976,