"Shinpei Hijiya,Takashi Ito,Tetsuo Nakamura","A High-Speed Write/Erase EAROM Cell",,"FUJITSU SCIENTIFIC & TECHNICAL JOURNAL","Fijitsu","Vol. 20","No. 4","pp. 535-545",1984,Dec.
"Ichiro Kato,Takashi Ito,Tetsuo Nakamura,Hajime Ishikawa","Characteristics of Thermally Nitrided Silicon Dioxide Film and Plasma Enhancement",,"Journal of Electronic Materials","Springer","Vol. 13","No. 6","pp. 913-929",1984,Aug.
"土屋真平,伊藤隆司,中村哲夫","傾斜したバンドギャップを持つ高速EAROMセル",,"電子通信学会論文誌","電子通信学会","Vol. J67-C","No. 6","pp. 505-512",1984,June
"Ichiro Kato,Takashi Ito,Tetsuo Nakamura,Hajime Ishikawa","Plasma Nitrided Silicon Dioxide Film for VLSI Gate Dielectrics","Elec. Mat. Conf.","Elec. Mat. Conf.",,"Vol. 6","No. 13","pp. 913-929",1983,
"Takashi Kato,Takashi Ito,Masao Taguchi,Tetsuo Nakamura,Hajime Ishikawa","Interfacial Oxidation of Ta205-Si Systems for High Density DRAM","Dig. of Tech. Papers on 1983 Symp. on VLSI Tech.","Dig. of Tech. Papers on 1983 Symp. on VLSI Tech.",,,,"pp. 86-87",1983,
"Takashi Ito,Ichiro Kato,Tetsuo Nakamura,Hajime Ishikawa","Thermal Nitride Thin Films for VLSI Circuits","Proc. of Symp. on Silicon Nitride Thin Insulating Films, ECS","Proc. of Symp. on Silicon Nitride Thin Insulating Films, ECS",,,,"pp. 295-301",1983,
"Takashi Ito,Tetsuo Nakamura,Hajime Ishikawa","Advantages of Thermal Nitride and Nirtoxide Gate Films in VLSI Process",,"IEEE Transactions on Electron Devices","IEEE Electron Devices Society","Vol. ED-29","No. 4","pp. 498-502",1982,Apr.
"Takashi Ito,Tetsuo Nakamura,Hajime Ishikawa","Effect of Thermally Nitrided SiO2 (Nirtoxide) on MOS Charactristics",,"Journal of The Electrochemical Society","The Electrochemical Society","Vol. 129","No. 1","pp. 184-188",1982,
"Takashi Ito,Toshihiko Sugii,Tetsuo Nakamura","Aluminum Plasma CVD for VLSI Circuit Inter-connections","Dig. of Tech. Papers on 1982 Symp. on VLSI Tech.","Dig. of Tech. Papers on 1982 Symp. on VLSI Tech.",,,,"pp. 20-21",1982,
"Ichiro Kato,Takashi Ito,Shnichi Inoue,Tetsuo Nakamura,Hajime Ishikawa","Ammonia Annealed SiO2 Films for Thin Gate Insulators",,"Japanese Journal of Applied Physics. Supplement","The Japan Society of Applied Phisics","Vol. 21-1",,"pp. 153-158",1982,
"Shinpei Hijiya,Takashi Ito,Tetsuo Nakamura,Hajime Ishikawa,Hideki Arakawa","A Nitride Barrier Avalanche Injection EAROM",,"IEEE Journal of Solid-State Circuits","IEEE Solid-State Circuits Society","Vol. SC-17","No. 5","pp. 852-856",1982,
"Shinpei Hijiya,Takashi Ito,Tetsuo Nakamura,Hajime Ishikawa,Hideki Arakawa","A Nitride Barrier Avalanche Injection EAROM","ISSCC Dig. of Tech. Papers","ISSCC Dig. of Tech. Papers",,,,"pp. 116-117",1982,
"Takashi Ito,Ichiro Kato,Takao Nozak,Tetsuo Nakamura,Hajime Ishikawa","Plasma enhanced Thermal Nitridation of Silicon",,"Applied Phisics Letters","American Institute of Physics","Vol. 38","No. 5","pp. 370-372",1981,
"Ichiro Kato,Takashi Ito,Shinichi Inoue,Tetsuo Nakamura,Hajime Ishikawa","Ammonia Annealed SiO2. Films for Thin Gate Insulators","Ext. Abs. on 13th Conf. on SSDM","Ext. Abs. on 13th Conf. on SSDM",,,,"pp. 73-74",1981,
"Masao Taguchi,Takashi Ito,Tetsu Fukano,Tetsuo Nakamura,Hajime Ishikawa","Thermal Nitride Capacitors for High Density RAMs","Tech. Dig. of IEDM","Tech. Dig. of IEDM",,,,"pp. 400-403",1981,
"Takashi Ito,Tetsuo Nakamura,Hajime Ishikawa","Thin Gate Insulators for VLSI","Dig. of Tech. Papers on 1981 Symp. on VLSI Tech.","Dig. of Tech. Papers on 1981 Symp. on VLSI Tech.",,,,"pp. 72-73",1981,
"Shinpei Hijiya,Takashi Ito,Tetsuo Nakamura,Nobuo Toyokura,Hajime Ishikawa","Electrically Alterable Read Only Memory Cell with Graded Energy Band-Gap Insulator","Tech. Dig. of IEDM","Tech. Dig. of IEDM",,,,"pp. 590-593",1980,