"Yoji Saito,Hideo Imai,Yoshihiro Sugita,Takashi Ito","Effects of Vacuum-Ultraviolet-Light-Induced Surface Reaction on Selective and Anisotropic Etching of Silicon Dioxide Using Anhydrous Hydrogen Fluoride Gas",,"Japanese Journal of Applied Physics","The Japan Society of Applied Phisics","Vol. 34","No. 12B","pp. 6882-6885",1995,Dec. "Yoshihiro Sugita,Naoki Awaji,Satoshi Ohkubo,Satoru Watanabe,Satoshi Komiya,Takashi Ito","X Ray Refractometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment","Ext. Abst. of 1995 Int. Conf. on SSDM","Ext. Abst. of 1995 Int. Conf. on SSDM",,,,"pp. 836-837",1995, "Yasuo Nara,Yoshihiro Sugita,Kei Horiuchi,Takashi Ito","Fine Pattern Etching of Silicon Using SR-Assisted lonization of CP4 Gas",,"Journal of Photopolymer Science and Technology","The Conference of Photopolymer Science and Technology","Vol. 6","No. 4","pp. 617-24",1993, "Yasuo Nara,Yoshihiro Sugita,Kei Horiuchi,Takashi Ito","SR-Assisted Epitaxy and Surface Cleaning of Silicon","Proc. of A Workshop on Two-dimensional Semiconductor Research using Synchrotron Radiation","Proc. of A Workshop on Two-dimensional Semiconductor Research using Synchrotron Radiation",,,,"p. 15",1993, "Yasuo Nara,Yoshihiro Sugita,Kei Horiuchi,Takashi Ito","Synchrotron Radiation-Assisted Silicon Homoepitaxy at 100 Using Si2H6/H2 Mixture",,"Applied Phisics Letters","American Institute of Physics","Vol. 61","No. 1","pp. 93-95",1992,July "Yasuo Nara,Yoshihiro Sugita,Kei Horiuchi,Takashi Ito","Synchrotron Radiation-Assisted Silicon Film Growth by lrradiation Parallel to the Substrate",,"Japanese Journal of Applied Physics","The Japan Society of Applied Phisics","Vol. 31","No. 8","pp. 2333-2337",1992,June "Yasuo Nara,Yoshihiro Sugita,Noriaki Nakayama,Takashi Ito","Etching of Si02 Film by Synchrotron Radiation in Hydrogen and its Application to Low Temperature Surface Cleaning",,"Journal of Vaccum Science and Technology","AVS","Vol. B10",,"pp. 274-277",1992,Jan. "Yasuo Nara,Yoshihiro Sugita,Noriaki Nakayama,Takashi Ito","Synchrotron Radiation Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface",,"Japanese Journal of Applied Physics","The Japan Society of Applied Phisics","Vol. 30","No. 10A","pp. L1753-L1755",1991,Oct.