"Kunihiro Suzuki,Tetsu Fukano,Tatsuya Yamazaki,Shinpei Hijiya,Takashi Ito,Hajime Ishikawa","Pseudo-HBT with Polysilicon Emitter Contact and an Ultra shallow Highly Doped Base by Photoepitaxy","Tech. Dig. of, IEDM","Tech. Dig. of, IEDM",,,,"pp. 811-813",1998,
"Takayuki Aoyama,Kunihiro Suzuki,Hiroko Tashiro,Yoko Toda,Tatsuya Yamazaki,Kanetake Takasaki,Takashi Ito","Effect of Fluorine on Boron Diffusion in Thin Silicon Dioxides and Oxynitride",,"Journal of Applied Physics","American Institute of Physics","Vol. 77","No. 1","pp. 417-419",1994,Sept.
"Kunihiro Suzuki,Tetsu Tanaka,Yoshiharu Tosaka,Hiroshi Horie,Yoshihiro Arimoto,Takashi Ito","Analytical Surface Potential Expression for Thin Film Double-Gate SOI MOSFETs",,"Solid-State Electron","ELSEVIER","Vol. 37","No. 2","pp. 327-332",1994,Feb.
"Takayuki Aoyama,Kunihiro Suzuki,Hiroko Tashiro,Tatsuya Yamazaki,Yoshihiro Arimoto,Takashi Ito","Boron Diffusion Through Pure Silicon Oxide and Oxynitride for Metal-Oxide-Semiconductor Devices",,"Journal of The Electrochemical Society","The Electrochemical Society","Vol. 140","No. 12","pp. 3624-3627",1993,Dec.
"Kunihiro Suzuki,Tetsu Tanaka,Hiroshi Horie,Yoshihiro Arimoto,Takashi Ito","Analytical Surface Potential Expression for Double-Gate SOI MOS FETS","Proc. Int. Workshop on VLSI Process and Device Modeling","Proc. Int. Workshop on VLSI Process and Device Modeling",,,,"pp. 150-151",1993,
"Toshihiro Sugii,Tatsuya Yamazaki,Kunihiro Suzuki,Tetsu Fukano,Takashi Ito","Si Hetero-Bipolar Transistor with an SiC Emitter and a Thin Epitaxial Base","Tech. Dig. of IEDM","Tech. Dig. of IEDM",,,,"pp. 659-662",1989,
"Kunihiro Suzuki,Tetsu Fukano,Hiroshi Ishiwari,Tatsuya Yamazaki,Masao Taguchi,Takashi Ito,Hajime Ishikawa","50nm Ultra Thin Base Silicon Bipolar. Device Fabrication Based on Photo-epitaxial Growth","Digest of Symp. on VLSI Technology","Digest of Symp. on VLSI Technology",,,,"pp. 91-93",1989,
"Tetsuo Eshita,Kunihiro Suzuki,Toru Hara,Fumio Mieno,Yuji Furumura,Mamoru  Maeda,Toshihiro Sugii,Takashi Ito","Low-Temperature Heteroepitaxy of ƒÀ- SiC on Si(111) Substrates",,"Proc. MRS Symp.",,,,"pp. 357-362",1988,