"K. Fukuda,N. Nogami,S. Kunisada,Y. Miyamoto","Circuit speedoriented device design scheme for GaAsSb / InGaAs double gatehetero-junction tunnel FETs",,"Jpn. J. Appl. Phys.",,,,"  59, SGGA06 (2020)",2020,Feb.
"K. Fukuda,N. Nogami,S. Kunisada,Y. Miyamoto","Circuit speedoriented device design scheme for double gate hetero tunnel FETs","2019 International Conference on Solid State Devices and Materials(SSDM 2019)",,,,,"  PS-1-21(LN),",2019,Sept.
"野上 直哉,福田 浩一,宮本 恭幸","量子効果の影響を考慮したGaAsSb/InGaAs Double-Gate Tunnel FETの検討","第66回応用物理学会春季学術講演会",,,,,"  9p-S221-4",2019,Mar.
"岩田 真次郎,大橋 一水,祢津 誠晃,福田 浩一,宮本 恭幸","GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化","第76回応用物理学会秋季学術講演会",,,,,"  16a-1C-6",2018,Sept.
"國貞 彰吾,福田 浩一,宮本 恭幸","GaAsSb/InGaAsダブルゲートTunnel FETにおける量子効果の検討‐正孔バンドの取り扱い","第65回応用物理学会春季学術講演会",,,,,"  18a-G203-7",2018,Mar.
"國貞 彰吾,福田 浩一,宮本 恭幸","[8a-C18-3] InGaAs/GaAsSbダブルゲートTunnel FETにおける量子効果の影響","第78回応用物理学会秋季学術講演会",,,,,,2017,Sept.
"金澤 徹,雨宮 智宏,祢津 誠晃,Vikrant Upadhyaya,福田 浩一,宮本 恭幸","HfS2系トンネルトランジスタのデバイスシミュレーション","第64回応用物理学会春季学術講演会",,,,,"  16a-F203-3",2017,Mar.
"Y. Miyamoto,W. Lin,S.Iwata,K. Fukuda","Steep sub-threshold slope in short-channel InGaAs TFET  (Invited)","The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2016)",,,,,"  A6-I-01",2016,July
"Wenbo Lin,Shinjiro Iwata,Koichi Fukuda,Yasuyuki Miyamoto","Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration",,"Japanese Journal of Applied Physics",,"Vol. 55","No. 7","pp. 070303",2016,June
"岩田 真次郎,大橋 一水,林 文博,福田 浩一,宮本 恭幸","GaAsSb/InGaAsダブルゲートンネルFET におけるソースおよびドレイン不純物濃度依存性",,"電気学会論文誌C",,"Vol. 136","no. 4","pp. 467-473",2016,Apr.
"林 文博,岩田 真次郎,福田 浩一,宮本 恭幸","短チャネルTFET におけるソース-ドレイン間直接トンネリングのオフ電流への寄与","第63回応用物理学会春季学術講演会",,,,,,2016,Mar.