"Masashi Yukinari,Noriaki Sato,Nobuhiko Nishiyama,Shigehisa Arai","Spectral characteristics of a 1.3-?m npn-AlGaInAs/InP transistor laser under various operating conditions",,"IEICE Electronics Express",,"Vol. 11","No. 18","pp. 1-6",2014,Aug.
"行成 元志,佐藤 憲明,西山 伸彦,荒井 滋久","1.3μm帯npn-AlGaInAs/InPトランジスタレーザ発光スペクトルの動作条件依存性","電気情報通信学会 2013年ソサイエティ大会",,,,,"  C-4-26",2013,Sept.
"Masashi Yukinari,Noriaki Sato,Nobuhiko Nishiyama,Shigehisa Arai","Spectral Characteristics under Various Operation Conditions of 1.3-μm npn-AlGaInAs/InP Transistor Laser","The 10th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2013)",,,,,"  ThK2-2",2013,July
"Noriaki Sato,Mizuki Shirao,Takashi Sato,Masashi Yukinari,Nobuhiko Nishiyama,Tomohiro Amemiya,Shigehisa Arai","Design and Characterization of AlGaInAs/InP Buried Heterostructure Transistor Lasers Emitting at 1.3-?m Wavelength",,"IEEE J. Select. Top. Quantum Electron.",,"Vol. 19","No. 4","pp. 1502608",2013,July
"Noriaki Sato,Mizuki Shirao,Takashi Sato,Masashi Yukinari,Nobuhiko Nishiyama,Tomohiro Amemiya,Shigehisa Arai","Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3-um Wavelength",,"IEEE Photonics Technol. Lett.",,"Vol. 25","No. 8","pp. 728-730",2013,Feb.
"Mizuki Shirao,Nobuhiko Nishiyama,Noriaki Sato,Shigehisa Arai","Theoretical analysis of the damping effect on a transistor laser",,"IEICE Electronics Express",,"Vol. 9","No. 23","pp. 1792-1798",2012,Dec.
"Noriaki Sato,Mizuki Shirao,Takashi Sato,Masashi Yukinari,Nobuhiko Nishiyama,Tomohiro Amemiya,S. Arai","Room-Temperature Continuous-Wave Operation of a 1.3-μm npn-AlGaInAs/InP Transistor Laser","23rd IEEE International Semiconductor Laser Conference (ISLC 2012)",,,,"No. MA7",,2012,Oct.
"Yuuta Takino,Mizuki Shirao,Noriaki Sato,takashi sato,Tomohiro Amemiya,Nobuhiko Nishiyama,SHIGEHISA ARAI","Improved regrowth interface of AlGaInAs/InP-buried-heterostructure lasers by in-situ thermal cleaning",,"IEEE Journal of Quantum Electronics",,"Vol. 48","No. 8","pp. 971-979",2012,Aug.
"Mizuki Shirao,takashi sato,Noriaki Sato,Nobuhiko Nishiyama,SHIGEHISA ARAI","Room-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 1.3-?m wavelength",,"Optics Express",,"Vol. 20","No. 4","pp. 3983?3989",2012,Feb.
"佐藤 孝司,白尾 瑞基,佐藤 憲明,西山 伸彦,荒井 滋久","1.3-?m帯npn-AlGaInAs/InPトランジスタレーザの室温パルス動作","第72回応用物理学会学術講演会",,,,,,2011,Oct.
"Takashi Sato,Mizuki Shirao,Yuta Takino,Noriaki Sato,Nobuhiko Nishiyama,Shigehisa Arai","Room-Temperature Lasing Operation of a 1.3-?m npn-AlGaInAs/InP Transistor Laser","the IEEE Photonics Conference 2011",,,,,,2011,Oct.
"佐藤憲明,白尾瑞基,佐藤孝司,西山伸彦,荒井滋久","ICP-RIEを用いたAlGaInAs/InP埋め込みヘテロ構造レーザ","第72回応用物理学会学術講演会",,,,,,2011,July
"Noriaki Sato,Yuuta Takino,Mizuki Shirao,Nobuhiko NIshiyama,Shigehisa Arai","Effect of Thermal Cleaning on Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers","International Symposium on Compound Semiconductors",,,"  P5.60",,,2011,July
"佐藤憲明,瀧野祐太,白尾瑞基,佐藤孝司,西山伸彦,荒井滋久","AlGaInAs/InP 埋め込みヘテロ構造レーザにおけるサーマルクリーニング中温度の再成長界面品質に対する影響","2011春季第58回応用物理関係連合講演会",,,,,,2011,July
"mizuki shirao,takashi sato,yuta takino,noriaki sato,nobuhiko nishiyama,shigehisa arai","Room-Temperature Continuous-Wave Operation of 1.3-?m Transistor Laser with AlGaInAs/InP Quantum Wells",,"Appl. Phys. Express",,"Vol. 4","No. 7","pp. 072101-1-3",2011,June
"mizuki shirao,takashi sato,noriaki sato,nobuhiko nishiyama,shigehisa arai","Lasing Operation of Long-Wavelength Transistor Laser Using AlGaInAs/InP Quantum Well Active Region",,"The 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)",,,,"pp. Tu-3.2.4",2011,May