"小山将央,Naoto Shigemori,Kenji Ozawa,Kiichi Tachi,Kuniyuki KAKUSHIMA,O. Nakatsuka,大毛利健治,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Keisaku Yamada,HIROSHI IWAI","Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source","41st European Solid-State Device Research Conference",,,,,,2013,
"Miyuki Kouda,Kenji Ozawa,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI,ト部友二,安田哲二","Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PA06-1-4",2011,Oct.
"Miyuki Kouda,Kenji Ozawa,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI,ト部友二,安田哲二","Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PA06-1-4",2011,Oct.
"小澤健児,幸田みゆき,角嶋邦之,パールハットアヘメト,岩井洋,ト部友二,安田哲二","La2O3 のALD成長のための原料選択：シクロペンタジエニル錯体とアミディネート錯体の比較","ゲートスタック研究会?材料･プロセス・評価の物理?（第16回研究会）",,,,,,2011,
"Kenji Ozawa,Miyuki Kouda,Y. Urabe,T. Yasuda,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI","La2O3  insulators prepared by ALD using La(iPrCp)3 source: self-limiting growth conditions and electrical properties","ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010",,,,,,2010,Nov.
"幸田みゆき,小澤健児,角嶋邦之,パールハットアヘメト,岩井洋,ト部 友二,安田 哲二","CVD法によるCeOx絶縁膜の作製と特性評価","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"小澤健児,幸田みゆき,角嶋邦之,パールハットアヘメト,岩井洋,ト部友二,安田哲二","La(iPrCp)3 を原料としたLa2O3のALD: Self-limiting 成長条件の明確化","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"Wataru Hosoda,Kenji Ozawa,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer","China Semiconductor Technology International Conference",,,,,"pp. 1105-1110",2010,Mar.
"小澤健児,幸田みゆき,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","La2O3 MOSFETへのCeOxキャップによる電気特性の改善","第57回応用物理学関係連合講演会","第57回応用物理学関係連合講演会講演予稿集",,,,"pp. 13-096",2010,Mar.
"幸田みゆき,小澤健児,角嶋邦之,パールハットアヘメト,岩井洋,ト部友二,安田哲二","Electrical characterization of CVD deposited Ce oxides","複合創造領域シンポジウム",,,,,,2010,
"小澤健児,幸田みゆき,角嶋邦之,パールハットアヘメト,岩井洋,ト部友二,安田哲二","Self-limited growth of La oxides with ALD","複合創造領域シンポジウム",,,,,,2010,
"Wataru Hosoda,Kenji Ozawa,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","A Study of Schottky Barrier Height Modulation of NiSi by Interlayer Insertion and Its Application to SOI SB-MOSFETs","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.