"柏木,上田,寺尾,鈴木,高尾,下川,中本","ヒータ加熱方式を用いた超小型香り発生デバイスの性能評価","電気学会全国大会、2014",,,,,,2014,
"T. Kanazawa,R. Terao,S. Ikeda,Y. Miyamoto","MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm","23rd Int. Conf. Indium Phosphide and Related Materials (IPRM2011)",,,,,,2011,Sept.
"R. Terao,T. Kanazawa,S. Ikeda,Y. Yonai,A. Kato,Y. Miyamoto","InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm",,"Applied Phys. Exp.","The Japan Society of Applied Physics","vol. 4","no. 5","  054201",2011,Apr.
"金澤 徹,寺尾 良輔,山口 裕太郎,池田 俊介,米内 義晴,加藤 淳,宮本 恭幸","裏面電極を有する???族量子井戸型チャネルMOSFET","電子情報通信学会電子デバイス研究会",,,,,,2011,Jan.
"金澤徹,寺尾良輔,山口裕太郎,池田俊介,米内義晴,加藤淳,宮本恭幸","Si基板上貼付された裏面電極付InP/InGaAs MOSFET","第71回応用物理学会学術講演会",,,,,,2010,Sept.
"Toru Kanazawa,Ryousuke Terao,Yuutarou Yamaguchi,Shunsuke Ikeda,Yosiharu Yonai,YASUYUKI MIYAMOTO","InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer","2010 International Conference on Solid State Devices and Materials",,,,,"pp. 129-130",2010,Sept.
"寺尾良輔,金澤徹,池田俊介,米内義晴,加藤淳,宮本恭幸","Al2O3ゲート絶縁膜および再成長ソースを有するサブミクロンInP/InGaAs n-MOSFET","第71回応用物理学会学術講演会",,,,,,2010,Sept.
"Toru Kanazawa,kazuya wakabayashi,Hisashi Saito,Ryousuke Terao,Shunsuke Ikeda,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Submicron InP/InGaAs Composite-Channel Metal?Oxide?Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source",,"Applied Physics Express",,"Vol. 3","No. 9","  094201",2010,Sept.
"T. Kanazawa,K. Wakabayashi,H. Saito,R. Terao,T. Tajima,S. Ikeda,Y. Miyamoto,K. Furuya","Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut","22nd Int. Conf. Indium Phosphide and Related Materials",,,,,,2010,June
"若林和也,金澤 徹,齋藤尚史,寺尾良輔,池田俊介,宮本恭幸,古屋一仁","再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"金澤 徹,若林和也,齋藤尚史,寺尾良輔,田島智宣,池田俊介,宮本恭幸,古屋一仁","III-V族サブミクロンチャネルを有する高移動度MOSFET","電気学会電子デバイス研究会",,,,,,2010,Mar.
"寺尾良輔,金澤 徹,齋藤尚史,若林和也,池田俊介,宮本恭幸,古屋一仁","Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特","第57回応用物理学関係連合研究会",,,,,,2010,Mar.
"金澤徹,若林和也,齋藤尚史,寺尾良輔,田島智宣,池田俊介,宮本恭幸,古屋一仁","Al2O3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET","電子情報通信学会 電子デバイス研究会","電子情報通信学会技術研究報告 電子デバイス",,"Vol. 109","No. 360","pp. 39-42",2010,Jan.
"Toru Kanazawa,Hisashi Saito,Kazuya Wakabayashi,Ryousuke Terao,Tomonori Tajima,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N<sup>+</sup>-InGaAs Source Region","2009 International Conference on Solid State Devices and Materials",,,,,"pp. 246-247",2009,Oct.
"K. Wakabayashi,T. Kanazawa,H. Saito,R. Terao,S. Ikeda,Y. Miyamoto,K. Furuya","InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure","Int. Symposium on Silicon Nano Devices in 2030",,,,,,2009,Oct.
"若林和也,金澤 徹,齋藤尚史,田島智宣,寺尾良輔,宮本恭幸,古屋一仁","「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"若林 和也,金澤 徹,齋藤 尚史,田島 智宣,寺尾 良輔,宮本 恭幸,古屋 一仁","再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性","第70回応用物理学会学術講演会",,,,,"pp. 1299",2009,Sept.