@article{CTT100885805,
  author = {Arisa Kimura and Kaito Kuroki and Ryoichiro Yoshida and Kenji Hirakawa and Masayuki Iwase and Munehiro Ogasawara and Takashi Yoda and Noboru Ishihara and Hiroyuki Ito},
  title = {Simulation of a ring oscillator operation during γ-ray irradiation using the TID response model of MOSFETs and its experimental verification},
  journal = {Japanese Journal of Applied Physics},
  year = 2023,
}

@article{CTT100885956,
  author = {Kaito Kuroki and Arisa Kimura and Kenji Hirakawa and Masayuki Iwase and Munehiro Ogasawara and Takashi Yoda and Noboru Ishihara and Hiroyuki Ito},
  title = {Design and Fabrication Results of Z-gate Layout MOSFETs for Radiation Hardness Integrated Circuit},
  journal = {Japanese Journal of Applied Physics},
  year = 2023,
}

@article{CTT100874132,
  author = {Takashi Yoda and Noboru Ishihara and Yuta Oshima and Motoki Ando and Kohei Kashiwagi and Ryoichiro Yoshida and Arisa Kimura and Kaito Kuroki and Shinsuke Nabeya and Kenji Hirakawa and Masayuki Iwase and Munehiro Ogasawara and Hiroyuki Ito},
  title = {Total ionizing dose effect on 2-D array data transfer ICs designed and fabricated by 0.18 μm CMOS technology},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100874137,
  author = {Munehiro Ogasawara and Ryoichiro Yoshida and Yuta Oshima and Motoki Ando and Arisa Kimura and Kenji Hirakawa and Masayuki Iwase and Shinsuke Nabeya and Takashi Yoda and Noboru Ishihara and Hiroyuki Ito},
  title = {Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage},
  journal = {Japanese Journal of Applied Physics},
  year = 2021,
}

@inproceedings{CTT100884714,
  author = {Arisa Kimura and Kaito Kuroki and Ryoichiro Yoshida and Kenji Hirakawa and Masayuki Iwase and Munehiro Ogasawara and Takashi Yoda and Noboru Ishihara and Hiroyuki Ito},
  title = {CMOS Inverter-Base Ring Oscillator Design and Evaluation Against gray Total Ionizing Dose Effect},
  booktitle = {International Conference on Solid State Devices and Materials},
  year = 2022,
}

@inproceedings{CTT100884713,
  author = {Kaito Kuroki and Arisa Kimura and Kenji Hirakawa and Masayuki Iwase and Munehiro Ogasawara and Takashi Yoda and Noboru Ishihara and Hiroyuki Ito},
  title = {A Z-gate Layout MOSFET Design and Verification of Radiation Hardness against γ-ray Total Ionizing Dose Effect},
  booktitle = {International Conference on Solid State Devices and Materials},
  year = 2022,
}

@inproceedings{CTT100885955,
  author = {黒木 海斗 and 木村 有佐 and 吉田 僚一郎 and 平川 顕二 and 岩瀬 正幸 and 小笠原 宗博 and 依田 孝 and 石原 昇 and 伊藤 浩之},
  title = {CMOS集積回路におけるリーク電流への γ線照射の影響},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100885804,
  author = {木村有佐 and 黒木海斗 and 吉田僚一郎 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之},
  title = {リング発振ICのγ線照射影響の回路モデル化},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100885803,
  author = {木村有佐 and 吉田僚一郎 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之},
  title = {P型とN型のFETサイズ比が異なるCMOS論理回路へのγ線照射の影響},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100884747,
  author = {吉田僚一郎 and 木村有佐 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 石原昇 and 小笠原宗博 and 依田孝 and 伊藤浩之},
  title = {ELT(Enclosed Layout Transistor)による耐放射線CMOS集積回路の設計},
  booktitle = {情報処理学会シンポジウムシリーズ},
  year = 2021,
}

@inproceedings{CTT100885802,
  author = {木村有佐 and 吉田僚一郎 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之},
  title = {CMOSリング発振回路へのγ線照射の影響とその要因解析},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100885801,
  author = {木村有佐 and 吉田僚一郎 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之},
  title = {リング発振回路におけるELTの耐放射線評価},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100842070,
  author = {吉田僚一郎 and 木村有佐 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之},
  title = {高累積線量におけるMOSFETのゲートバイアス特性比較},
  booktitle = {},
  year = 2020,
}