論文

• Pham Xuan Thi, Masanobu Miyata, Huynh Van Ngoc, Pham Tien Lam, Nguyen Thanh Tung, Manoharan Muruganathan, Phan Trong Tue, Masashi Akabori, Dam Hieu Chi, Hiroshi Mizuta, Yuzuru Takamura, Mikio Koyano. Thermoelectric Properties and Carrier Localization in Ultrathin Layer of Nb-Doped MoS2, physica status solidi B, Wiley, Vol. 255, p. 1800125, Aug. 2018.
• A. Kunisaki, M. Muruganathan, H. Mizuta, T. Kodera. First-principles calculation of a negatively charged boron-vacancy center in diamond, Jpn. J. Appl. Phys., 56, 04CK02-1-4, Mar. 2017.
• MANOHARAN MURUGANATHAN, Yoshishige Tsuchiya, SHUNRI ODA, hiroshi mizuta. Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K, Nano Letters, Vol. 8 (12), pp. 4648-4652, Dec. 2008.
• M. Manoharan, Shunri Oda, Hiroshi Mizuta. Impact of channel constrictions on the formation of multiple tunnel junctions in heavily doped silicon single electron transistors, Applied Physics Letters, Vol. 93, pp. 112107 (3 pages), Sept. 2008.
• M. Manoharan, Benjamin Henri Jose Pruvost, Hiroshi Mizuta, Shunri Oda. Impact of key circuit parameters onsignal-to-noise ratio characteristics for theradio-frequency single electron transistors, IEEE Transactions on Nanotechnology, Vol. 7, No. 8, May 2008.
• M. Manoharan, Yoshishige Tsuchiya, Shunri Oda, Hiroshi Mizuta. Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation, Vol. 92, pp. 092110 (3 pages), Mar. 2008.
• M. Manoharan, Yoshiyuki Kawata, Yoshishige Tsuchiya, Shunri Oda, Hiroshi Mizuta. Strongly coupled multiple-dot characteristics in dual recess structured silicon channel, Applied Physics Letters, Feb. 2008.

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