@inproceedings{CTT100808047,
  author = {岡田 泰典 and 山口 晋平 and 大橋 匠 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas},
  booktitle = {},
  year = 2017,
}

@misc{CTT100770127,
  author = {Shimpei Yamaguchi},
  title = {Threshold voltage control technology in metal/high-k pFET consisting of high germanium content SiGe channel and fixed charge/oxygen vacancy control in gate stack},
  year = 2018,
}

@misc{CTT100770128,
  author = {Shimpei Yamaguchi},
  title = {Threshold voltage control technology in metal/high-k pFET consisting of high germanium content SiGe channel and fixed charge/oxygen vacancy control in gate stack},
  year = 2018,
}

@misc{CTT100807263,
  author = {Shimpei Yamaguchi},
  title = {Threshold voltage control technology in metal/high-k pFET consisting of high germanium content SiGe channel and fixed charge/oxygen vacancy control in gate stack},
  year = 2018,
}



@phdthesis{CTT100770127,
  author = {Shimpei Yamaguchi},
  title = {Threshold voltage control technology in metal/high-k pFET consisting of high germanium content SiGe channel and fixed charge/oxygen vacancy control in gate stack},
  school = {東京工業大学},
  year = 2018,
}

@phdthesis{CTT100770128,
  author = {Shimpei Yamaguchi},
  title = {Threshold voltage control technology in metal/high-k pFET consisting of high germanium content SiGe channel and fixed charge/oxygen vacancy control in gate stack},
  school = {東京工業大学},
  year = 2018,
}

@phdthesis{CTT100807263,
  author = {Shimpei Yamaguchi},
  title = {Threshold voltage control technology in metal/high-k pFET consisting of high germanium content SiGe channel and fixed charge/oxygen vacancy control in gate stack},
  school = {東京工業大学},
  year = 2018,
}