@article{CTT100772146,
  author = {J. Yaita and T.Suto and M. Natal and S. E. Saddow and M. Hatano and T. Iwasaki},
  title = {In-situ bias current monitoring of nucleation for epitaxial diamonds on 3C-SiC/Si substrates},
  journal = {Diamond & Related Materials},
  year = 2018,
}

@article{CTT100740917,
  author = {T. Suto and J. Yaita and T. Iwasaki and M. Hatano},
  title = {Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC-Si (111) substrate},
  journal = {Appl. Phys. Lett.},
  year = 2017,
}

@inproceedings{CTT100738864,
  author = {Takeru Suto and Junya Yaita and Takayuki Iwasaki and Mutsuko Hatano},
  title = {Heteroepitaxial Growth of Highly-Oriented Diamond Films on 3C-SiC / Si (111) Substrates by Pulse Bias Enhanced Nucleation},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740909,
  author = {須藤建瑠 and 桑原新之介 and 矢板潤也 and 岩崎孝之 and 波多野睦子},
  title = {高酸素濃度成長を用いたSi(111)上高配向ダイヤ膜の合成},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735398,
  author = {Yusuke Shimamoto and Takeru Suto and Hayato Ozawa and Mutsuko Hatano and Shunri Oda and Takayuki Iwasaki},
  title = {Very Narrow Linewidths in the Fluorescence from Germanium-Vacancy Centers in Nanodiamonds},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100738869,
  author = {須藤建瑠 and 矢板潤也 and 岩崎孝之 and 波多野睦子},
  title = {パルスバイアス核形成および選択的エッチング効果を用いた3C-SiC/Si上への(111)高配向ダイヤモンドの合成},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100734159,
  author = {Y. Shimamoto and T. Suto and H. Ozawa and M. Hatano and S.Oda and T. Iwasaki},
  title = {Very Narrow Linewidths in the Fluorescence from Germanium-Vacancy Centers in Nanodiamonds},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100723180,
  author = {島本祐輔 and 須藤建瑠 and 波多野睦子 and 小田俊理 and 岩崎孝之},
  title = {ナノダイヤモンド中に形成したGeVセンターからの単一光子放出},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100723154,
  author = {須藤 建瑠 and 矢板 潤也 and 岩崎 孝之 and 波多野 睦子},
  title = {3C-SiC(111)/Si(111)上への高配向ダイヤモンドのヘテロエピタキシャル成長},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100707712,
  author = {須藤 建瑠 and 矢板 潤也 and 岩崎 孝之 and 波多野 睦子},
  title = {“パルスバイアス核形成法を用いた3C-SiC(111)/Si(111)上への高配向ダイヤモンドの合成},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100709179,
  author = {須藤建瑠 and 矢板潤也 and 岩崎孝之 and 波多野睦子},
  title = {パルスバイアス核形成による3C-SiC(111)/Si(111)上へのダイヤモンドヘテロエピタキシャル成長},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100709189,
  author = {T.Suto and J.Yaita and T.Iwasaki and M.Natal and S.E.Saddow and M.Hatano},
  title = {Heteroepitaxial Growth of Diamond on 3C-SiC/Si Substrates by Antenna-Edge Microwave Plasma CVD},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100712026,
  author = {T. Suto and J. Yaita and T. Iwasaki and M. Hatano},
  title = {Heteroepitaxial Growth of Diamond on 3C-SiC/Si by Antenna-edge Microwave Plasma CVD},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100679662,
  author = {長谷川淳一 and 須藤建瑠 and 岩崎孝之 and 小寺哲夫 and 古橋壮之 and 野口宗隆 and 中田修平 and 西村正 and 波多野睦子},
  title = {DLTS法による窒化後酸化SiC-MOSFETの界面準位評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100681294,
  author = {長谷川淳一 and 野口宗隆 and 中田修平 and 須藤建瑠 and 岩崎孝之 and 小寺哲夫 and 古橋壮之 and 西村正 and 波多野睦子},
  title = {DLTS法による窒化後酸化SiC-MOSFETの界面準位評価},
  booktitle = {},
  year = 2014,
}