@article{CTT100583533,
  author = {Y.  Takamura and A. Nishijima and Y. Nagahama and R. Nakane and S. Sugahara},
  title = {Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors},
  journal = {ECS Trans.},
  year = 2008,
}

@inproceedings{CTT100585372,
  author = {Tomoyuki Kurihara and Yohei Nagahama and Daisuke Kobayshi and Hiroki Niikura and Yoshishige Tsuchiya and Hiroshi Mizuta and Hiroshi Nohira and Ken Uchida and Shunri Oda},
  title = {Engineering of Heterostructured Tunnel Barrier for Non-Volatile Memory Applications: Potential of Pr-based Heterostructured Barrier as a Tunneling Oxide},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583559,
  author = {Y. Takamura and Y. Nagahama and A. Nishijima and R. Nakane and S. Sugahara},
  title = {Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors},
  booktitle = {Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME2008)},
  year = 2008,
}

@inproceedings{CTT100589210,
  author = {Y. Takamura and A. Nishijima and Y. Nagahama and R. Nakane and S. Sugahara},
  title = {Fabrication Technique of Si- and Ge-based Full-Heusler Alloys for Half-metallic Source/Drain Spin MOSFETs},
  booktitle = {The 4th Intl. Nanotechnology Conf. on Communication and Cooperation (INC4)},
  year = 2008,
}

@inproceedings{CTT100583598,
  author = {高村陽太 and 長浜陽平 and 西島輝 and 中根了昌 and 宗片比呂夫 and 菅原聡},
  title = {RTAを用いて作製したフルホイスラー合金Co2FeSi、Co2FeGeの構造},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100669710,
  author = {高村陽太 and 西島輝 and 長浜陽平 and 中根了昌 and 宗片比呂夫 and 菅原聡},
  title = {Rapid Thermal Annealingを用いたフルホイスラー合金の作製と評価},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100548143,
  author = {高村陽太 and 長浜陽平 and 中根了昌 and 宗片比呂夫 and 菅原聡},
  title = {RTAを用いた非晶質絶縁膜上へのホイスラー合金の形成とその評価},
  booktitle = {第68回応用物理学会学術講演会},
  year = 2007,
}