@article{CTT100737085,
  author = {Junghwan Kim and Takumi Sekiya and Norihiko Miyokawa and Naoto Watanabe and Koji Kimoto and Keisuke Ide and Yoshitake Toda and Shigenori Ueda and Naoki Ohashi and Hidenori Hiramatsu and Hideo Hosono and Toshio Kamiya},
  title = {Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor},
  journal = {NPG Asia Materials},
  year = 2017,
}

@article{CTT100711033,
  author = {Junghwan Kim and Norihiko Miyokawa and Takumi Sekiya and Keisuke Ide and Yoshitake Toda and Hidenori Hiramatsu and Hideo Hosono and Toshio Kamiya},
  title = {Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O},
  journal = {Thin Solid Films},
  year = 2016,
}

@article{CTT100701200,
  author = {Junghwan Kim and Norihiko Miyokawa and Keisuke Ide and Yoshitake Toda and Hidenori Hiramatsu and Hideo Hosono and Toshio Kamiya},
  title = {Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor},
  journal = {AIP Advances},
  year = 2016,
}

@article{CTT100711032,
  author = {Junghwan KIM and Norihiko MIYOKAWA and Keisuke IDE and Hidenori HIRAMATSU and Hideo HOSONO and Toshio KAMIYA},
  title = {Transparent amorphous oxide semiconductor thin film phosphor, In–Mg–O:Eu},
  journal = {J. Cerm. Soc. Jpn.},
  year = 2016,
}