論文

• H. Sugiyama, A. Teranishi, S. Suzuki, M. Asada. Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates, Jpn. J. Appl. Phys., vol. 53, p. 031202, Feb. 2014.
• A. Teranishi, K. Shizuno, S. Suzuki, M. Asada, H. Sugiyama, H. Yokoyama. Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High-Indium Composition Transit Layers for Reduction of Transit Delay, IEICE Electron. Express, vol. 9, no. 5, pp. 385-390, Mar. 2012.
• A. Teranishi, S. Suzuki, K. Shizuno, M. Asada, H. Sugiyama, H. Yokoyama. Estimation of Transit time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers, Trans. Electron. IEICE of Japan, vol. E95-C, no. 3, pp. 401-407, Mar. 2012.
• H. Sugiyama, A. Teranishi, S. Suzuki, M. Asada. High Uniformity InP-Based Resonant Tunneling Diode Wafers with Peak Current Density of over 6×10⁵ A/cm² Grown by Metal-Organic Vapor-Phase Epitaxy, J. Crystal Growth, vol. 336, pp. 24-28, Sept. 2011.
• S. Suzuki, M. Asada, A. Teranishi, H. Sugiyama, H. Yokoyama. Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature, Appl. Phys. Lett., Vol. 97, p. 242102, Dec. 2010.
• S. Suzuki, K. Sawada, A. Teranishi, M. Asada, H. Sugiyama, H. Yokoyama. Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doping structures, Electron. Lett., vol. 46, pp. 1006-1007, July 2010.
• H. Sugiyama, H. Yokoyama, A. Teranishi, S. Suzuki, M. Asada. Extremely High Peak Current Densities of over 1×10⁶ A/cm² in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy, Jpn. J. Appl. Phys., vol. 49, p. 051201, 2010.
• M. Shiraishi, S. Suzuki, A. Teranishi, M. Asada, H. Sugiyama, H. Yokoyama. Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas, Jpn. J. Appl. Phys., vol. 49, p. 020211, 2010.
• Safumi Suzuki, Atsushi Teranishi, Kensuke Hinata, Masahiro Asada, Hiroki Sugiyama, Haruki Yokoyama. Fundamental Oscillation of up to 831 GHz in GaInAs/AlAs Resonant Tunneling Diode, Applied Physics Express, Vol. 2, p. 054501, Apr. 2009.
• N. Kishimoto, S. Suzuki, A. Teranishi, M. Asada. Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers, Applied Phys. Express, vol. 1, p. 042003, 2008.

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