論文

• Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH05, Jan. 2021.
• Satoshi Igarashi, Yusuke Mochiduki, Haruki Tanigawa, Masaya Hamada, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH04, Jan. 2021.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation, Japanese Journal of Applied Physics (JJAP), Vol. 59, No. 10, Page 105501, Sept. 2020.
• Kentaro Matsuura, Masaya Hamada, Takuya Hamada, Haruki Tanigawa, Takuro Sakamoto, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo. Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 59, No. 8, Page 80906, Aug. 2020.
• Haruki Tanigawa, Kentaro Matsuura, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks, Japanese Journal of Applied Physics (JJAP), Vol. 59, Apr. 2020.
• K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration, IEEE Journal of the Electron Devices Society, IEEE, Vol. 6, pp. 1251 - 1257, Nov. 2018.  公式リンク  
  
• J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, N. Ikarashi, H. Wakabayashi, N. Ikarashi. Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing, Journal of the Electron Devices Society, Vol. 7, No. 1, p. 2, Oct. 2018.
• M. Toyama, T. Ohashi, K. Matsuura, J. Shimizu, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing, JPN J APPL PHYS, 57, 07MA04, June 2018.
• Y. Hibino, S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Investigation on Mo1-xWxS2 Fabricated by Co-Sputtering and Post-Deposition Sulfurization with (t-C4H9)2S2, JPN J APPL PHYS, 57, 06HB04, May 2018.
• N. Hayakawa, Iriya Muneta, Takumi Ohashi, Kenntarou Matsuura, Junnichi Shimizu, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Hitoshi Wakabayashi. Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control, Japan Journal of Applied Physics, IOP Publishing, Vol. 57, 04FP13, Mar. 2018.  公式リンク  
  
• K. Matsuura, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization, Journal of Electrical Materials, Springer US, Vol. 47, No. 7, pp. 3497, Mar. 2018.
• Y. Hibino, S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, H. Wakabayashi, A. Ogura. Band gap-tuned MoS2(1-x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process, Journal of Materials Research, Vol. 32, No. 16, 2017.
• "Jun’ichi Shimizu", "Takumi Ohashi", "Kentaro Matsuura", "Iriya Muneta", "Kuniyuki Kakushima", "Kazuo Tsutsui", "Hitoshi Wakabayashi". High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs, Japanese Journal of Applied Physics (JJAP), Vol. 56, No. 4S, 2017.
• S. Ishihara, Y. Hibino, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudo, H. Wakabayashi, A. Ogura. Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor, MRS Advances, Vol. 2, No. 29, 2017.
• Y. Hibino, S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudo, H. Wakabayashi, A. Ogura. Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition, MRS Advances, Vol. 2, No. 29, 2017.
• Y. Hibino, N. Sawamoto, K. Suda, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9)2S2, Japan Journal of Applied Physics, Vol. 55, 2016.
• S. Ishihara, Y. Hibino, N. Sawamoto, K. Suda, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2, Japan Journal of Applied Physics, Vol. 55, 2016.
• S. Ishihara, Y. Hibino, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Wakabayashi, A. Ogura. Large Scale Uniformity of Sputtering Deposited Single- and Few-Layer MoS2 Investigated by XPS Multipoint Measurements and Histogram Analysis of Optical Contrast, ECS J. Solid State Sci. Technol., Vol. 5, No. 11, 2016.
• T. Ohashi, K. Suda, S. Ishihara, N. Sawamoto, S. Yamaguchi, K. Matsuura, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai, A. Ogura, H. Wakabayashi. Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs, Japan Journal of Applied Physics, Vol. 54, No. 4S, Mar. 2015.

国際会議発表 (査読有り)

• Satoshi Igarashi, Yusuke Mochiduki, Haruki Tanigawa, Masaya Hamada, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Y. Oyanagi, Y. Hibino, S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Wakabayashi, A. Ogura. Fabrication of WS2 Film by DC Bias Applied High-Temperature Sputtering, MRS Fall Meeting & Exhibit, Nov. 2018.
• S. Ishihara, Y. Hibino, Y. Oyanagi, N. Sawamoto, T. Ohashi, K. Matsuura, H. Wakabayashi, A. Ogura. Stimulating Raman Spectra of Sputtering Deposited Polycrystalline MoS2 Films by Phonon Confinement Model, MRS Fall Meeting & Exhibit, Nov. 2018.
• M. Hamada, K. Matsuura, T. Sakamoto, H. Tanigawa, T. Ohashi, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, H. Wakabayashi. Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct. 2018.
• T. Sakamoto, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, Y. Suzuki, N. Ikarashi, H. Wakabayashi. Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct. 2018.
• S. Ishihara, Y. Hibino, N. Sawamoto, T. Ohashi, K. Matsuura, H. Wakabayashi, A. Ogura. Centimeter-scale high-performance few-layer MoS2 fabricated by RF magnetron sputtering and subsequent post-deposition annealing, International Conference on Solid State Devices and Materials, Sept. 2018.
• S. Ishihara, Y. Hibino, N. Sawamoto, T. Ohashi, K. Matsuura, H. Wakabayashi, A. Ogura. Low-temperature solid-phase crystallization of sputtering deposited quasi-layered MoS2 thin film, The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), Aug. 2018.
• Y. Hibino, S. Ishihara, Y. Oyanagi, N. Sawamoto, T. Ohashi, K. Matsuura, H. Wakabayashi, A. Ogura. Suppression of Sulfur Desorption of High-Temperature Sputtered MoS2 Film by Applying DC Bias, ECS Transactions, vol. 85, no. 13, 531, May 2018.
• Y. Hibino, S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Investigation of MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition, MRS Spring Meeting & Exhibit, Mar. 2018.
• S. Ishihara, Y. Hibino, N. Sawamoto, K. Suda, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor, MRS Spring Meeting & Exhibit, Mar. 2018.
• K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, pp. 104-106, Mar. 2018.
• M. Toyama, T. Ohashi, K. Matsuura, J. Shimizu, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing, Advanced Metallization Conference 2017: 27th Asian Session, Oct. 2017.  公式リンク  
  
• N. Hayakawa, I. Muneta, T. Ohashi, K. Matsuura, J. Shimizu, K. Kakushima, K. Tsutsui, H. Wakabayashi. Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure, International Conference on Solid State Devices and Materials, Sept. 2017.
• J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, N. Ikarashi, H. Wakabayashi. Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET, IEEE Electron Device Technology and Manufacturing Conference (EDTM), 2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM), pp. 222-223, June 2017.  公式リンク  
  
• S. Hirano, J. Shimizu, K. Matsuura, T. Ohashi, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films, 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM), pp. 234-235, June 2017.  公式リンク  
  
• J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC, International Conference on Solid State Devices and Materials, Sept. 2016.
• K. Matsuura, T. Ohashi, I. Muneta, S. Ishihara, N. Sawamoto, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film, Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC), 2016.
• S. Ishihara, Y. Hibino, N. Sawamoto, K. Suda, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Fabrication of High-Quality Single- and Few-Layer MoS2 Films by Combination of Sputtering Deposition and Post-Deposition Sulfurization Annealing, MRS Fall Meeting & Exhibit, 2015.
• S. Ishihara, K. Suda, Y. Hibino, N. Sawamoto, T. Ohashi, S. Yamaguchi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Improving Crystalline Quality of Sputtering Deposited MoS2 Thin Film by Post-Deposition Sulfurization Annealing Using (t-C4H9)2S2, International Conference on Solid State Devices and Materials, 2015.
• S. Ishihara, K. Suda, Y. Hibino, N. Sawamoto, T. Ohashi, S. Yamaguchi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Evaluation of Sputtering Deposited 2-Dimensional MoS2 Film by Raman Spectroscopy, MRS Proceedings, 1781, 11, 2015.
• Y. Hibino, S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Low Temperature Formation of Layered MoS2 by Sulfurization of E-Beam Evaporated Mo Thin Film Using (t-C4H9)2S2, MRS Fall Meeting & Exhibit, 2015.
• S. Ishihara, Y. Hibino, N. Sawamoto, K. Suda, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Properties of Single-Layer MoS2 Film Fabricated by Combination of Sputtering Deposition and Post-Deposition Sulfurization Annealing Using (t-C4H9)2S2, International Microprocesses and Nanotechnology Conference (MNC), 2015.
• T. Ohashi, K. Suda, S. Ishihara, N. Sawamoto, S. Yamaguchi, K. Matsuura, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai, A. Ogura, Hitoshi Wakabayashi. Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs, International Conference on Solid State Devices and Materials, Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, 1074, 2014.
• T. Ohashi, S. Yamaguchi, K. Matsuura, H. Wakabayashi. Sputtered MoS2 Film for Future High-Performance Nanoelectronic Devices, The 7th Thailand-Japan International Academic Conference, Material Engineering and Technology, 2014.

国内会議発表 (査読なし・不明)

• 濱田 昌也, 松浦 賢太朗, 濱田 拓也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact, 第70回応用物理学会春季学術講演会, Mar. 2023.
• 松浦 賢太朗, 濱田 昌也, 濱田 拓也, 谷川 晴紀, 坂本 拓朗, 堀 敦, 宗田 伊理也, 川那子 高暢, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. 大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs, 第67回応用物理学会春期学術講演会, Mar. 2020.
• 五十嵐 智, 望月 祐輔, 谷川 晴紀, 濱田 昌也, 松浦 賢太朗, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜とTiSi2膜の界面におけるFGアニールによるコンタクト抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 濱田 昌也, 松浦 賢太朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 谷川 晴紀, 松浦 賢太朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. 正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 北原廉, 髙木聡太, 松浦賢太朗, 鷲尾拓哉, 西條美紀, 大橋匠. 次世代AI人材育成に向けた機械学習ワークショップデザイン, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 髙木聡太, 北原廉, 松浦賢太朗, 鷲尾拓哉, 西條美紀, 大橋匠. 機械学習ワークショップ設計に向けた高専生の意識調査, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 松浦 賢太朗, 濱田 昌也, 坂本 拓朗, 谷川 晴紀, 宗田 伊理也, 石原 聖也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 松浦賢太朗, 清水淳一, 外山真矢人, 大橋匠, 坂本拓朗, 宗田伊理也, 石原聖也, 角嶋邦之, 筒井一生, 小椋厚志, 若林整. 大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用, 応用物理学会シリコンテクノロジー分科会第216回研究集会, Feb. 2019.
• 谷川 晴紀, 松浦 賢太朗, 濱田 昌也, 坂本 拓朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 五十嵐 智, 松浦 賢太朗, 濱田 昌也, 谷川 晴紀, 坂本 拓朗, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 松浦 賢太朗, 清水 淳一, 外山 真矢人, 大橋 匠, 宗田 伊理也, 石原 聖也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. 大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 坂本 拓朗, 大橋 匠, 松浦 賢太朗, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減, Mar. 2018.
• 大橋 匠, 坂本 拓朗, 松浦 賢太朗, 清水 淳一, 外山 真矢人, 石原 聖也, 日比野 祐介, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. Migration制御したスパッタリング法による2次元層状MoS2成膜, 第65回応用物理学会春季学術講演会, Mar. 2018.
• 早川直希, 宗田伊理也, 大橋匠, 松浦賢太朗, 清水淳一, 角嶋邦之, 筒井一生, 若林整. トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 外山 真矢人, 大橋 匠, 松浦 賢太朗, 清水 淳一, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性, 第64回応用物理学会春季学術講演会, Mar. 2017.

学位論文

• Chip Level Integration for High Performance Sputtered-MoS2 nMISFETs,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2020/03/26,   
• Chip Level Integration for High Performance Sputtered-MoS2 nMISFETs,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2020/03/26,   
• Chip Level Integration for High Performance Sputtered-MoS2 nMISFETs,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2020/03/26,   

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