@article{CTT100654225,
  author = {K. Takeda and T. Obata and Y. Fukuoka and W. M. Akhtar and J. Kamioka and T. Kodera and S. Oda and S. Tarucha},
  title = {Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots},
  journal = {Appl. Phys. Lett},
  year = 2013,
}

@inproceedings{CTT100655071,
  author = {K. Takeda and Y. Fukuoka and T. Obata and J. Sailer and A. Wild and T. Kodera and K. Sawano and S. Oda and D. Bougeard and G. Abstreiter and S. Tarucha and Y Shiraki},
  title = {Charge noise characterization and reduction in Si/SiGe quantum devices},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654212,
  author = {福岡佑二 and 小寺哲夫 and 武田健太 and 小幡利顕 and 吉田勝治 and 澤野憲太郎 and 内田建 and 白木靖寛 and 樽茶清悟 and 小田俊理},
  title = {Capping gate構造を有するSi/SiGe量子ドットの作製と評価},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100653586,
  author = {T. Kodera and Y. Fukuoka and SHUNRI ODA and K. Takeda and T. Obata and K. Yoshida and K. Sawano},
  title = {Fabrication and characterization of Si/SiGe quantum dots with capping gate},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100634393,
  author = {Y. Fukuoka and T. Kodera and K. Takeda and T. Obata and K. Yoshida and T. Otsuka and K. Sawano and K Uchida and Y. Shiraki and S. Tarucha and S. Oda},
  title = {Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630241,
  author = {福岡佑二 and 小寺哲夫 and 大塚朋廣 and 武田健太 and 小幡利顕 and 吉田勝治 and 澤野憲太郎 and 内田 建 and 白木靖寛 and 樽茶清悟 and 小田俊理},
  title = {Si/SiGe量子ドット構造のシミュレーションと作製},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620661,
  author = {Y. Fukuoka and T. Kodera and T. Otsuka and K. Takeda and T. Obata and K. Yoshida and K. Sawano and K Uchida and Y. Shiraki and S. Tarucha and S. Oda},
  title = {Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619845,
  author = {福岡佑二 and 小寺哲夫 and 大塚朋廣 and 武田健太 and 小幡利顕 and 吉田勝治 and 澤野憲太郎 and 内田 建 and 白木靖寛 and 樽茶清悟 and 小田俊理},
  title = {Si/SiGe 量子ドット作製に向けたPd トップゲート動作点の低電圧化},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620250,
  author = {福岡佑二 and 小寺哲夫 and 大塚朋廣 and 武田健太 and 小幡利顕 and 吉田勝治 and 澤野憲太郎 and 内田 建 and 白木靖寛 and 樽茶清悟 and 小田俊理},
  title = {Si/SiGe系2DEGのPdショットゲート制御による結合量子ドットの作製},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100660364,
  author = {武田健太 and 小幡利顕 and 福岡佑二 and 大塚朋廣 and 小寺哲夫 and 吉田勝治 and 澤野憲太郎 and 小田俊理 and 白木靖寛 and 樽茶清悟},
  title = {PdショットキーゲートによるSi/SiGe量子ドットの作製とその評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100660366,
  author = {Toshiaki Obata and 申潤錫 and ロランドブルナ and Kenta Takeda and Yuji Fukuoka and 大塚朋廣 and Tetsuo Kodera and 吉田勝治 and 澤野憲太郎 and SHUNRI ODA and 白木靖寛 and Seigo Tarucha},
  title = {Lateral dot fabrication by using a MOS electric gate on SiGe hetero structure},
  booktitle = {},
  year = 2010,
}