@article{CTT100641018,
  author = {K. Fushinobu and T. Hatakeyama},
  title = {Electro-thermal scaling analysis of Si MOSFETs with device length typically larger than 100 nm},
  journal = {Transactions of The Japan Institute of Electronics Packaging},
  year = 2012,
}

@article{CTT100585603,
  author = {Taisuke Miura and Tomoyuki Hatakeyama and KAZUYOSHI FUSHINOBU and Ken Okazaki},
  title = {An investigation of effect of micro-structure on current collector for polymer electrolyte fuel cells},
  journal = {Thermal Science and Engineering},
  year = 2009,
}

@article{CTT100597903,
  author = {S. Hasmady and T. Hatakeyama and M. P. Wacker and K. Fushinobu and KEN OKAZAKI},
  title = {Treatment of Heterogeneous Electrocatalysis in Modeling Transport-Reaction Phenomena in PEFCs},
  journal = {Thermal Science and Engineering},
  year = 2009,
}

@article{CTT100582147,
  author = {Tomoyuki Hatakeyama and KEN OKAZAKI and KAZUYOSHI FUSHINOBU},
  title = {Electro-Thermal Analysis of Submicron Si MOSFET with Zoned Mesh Based on Semiconductor Physics Theory},
  journal = {},
  year = 2008,
}

@article{CTT100568902,
  author = {T. Hatakeyama and K. Fushinobu},
  title = {Modeling of Heat Generation and Heat Flow in CMOS Device (Invited)},
  journal = {Heat Transfer Engineering},
  year = 2008,
}

@article{CTT100582533,
  author = {Tomoyuki Hatakeyama and KAZUYOSHI FUSHINOBU},
  title = {Modeling of Heat Generation and Heat Flow in CMOS Device (Invited)},
  journal = {Heat Transfer Engineering},
  year = 2008,
}

@inproceedings{CTT100624134,
  author = {T. Hatakeyama and M. Ishizuka and S. Nakagawa and K. Fushinobu},
  title = {Electro-Thermal Analysis and Monte Carlo Simulation for Thermal Design of Si Devices},
  booktitle = {Proc. ICEP2011},
  year = 2011,
}

@inproceedings{CTT100624133,
  author = {K. Fushinobu and T. Hatakeyama},
  title = {Electro-thermal scaling analysis of Si MOSFETs with device length typically larger than 100 nm},
  booktitle = {Proc. ICEP2011},
  year = 2011,
}

@inproceedings{CTT100624307,
  author = {K. Fushinobu and T. Hatakeyama},
  title = {Scaling consideration on local hotspot for Si MOSFETs - For device length scale typically larger than 100 nm},
  booktitle = {Proc. SEMI-THERM 27},
  year = 2011,
}

@inproceedings{CTT100609246,
  author = {K. Fushinobu and Y. Yamamoto and T. Hatakeyama},
  title = {Scaling consideration on local hotspot for Si MOSFETs - For device length scale typically larger than 100 nm},
  booktitle = {Proc. ITherm 2010},
  year = 2010,
}

@inproceedings{CTT100591722,
  author = {畠山友行 and 伏信一慶 and 石塚勝},
  title = {Siナノトランジスタ熱管理のための熱・電気連成解析},
  booktitle = {日本機械学会第22回計算力学講演会講演論文集},
  year = 2009,
}

@inproceedings{CTT100591714,
  author = {Yasufumi Yamamoto and T. Hatakeyama and K. Fushinobu and K. Okazaki},
  title = {Heat generation characteristics in Si MOSFETs for the device-level thermal management - Effect of the device scaling and transport properties},
  booktitle = {Proc. 7th CHE Conference},
  year = 2009,
}

@inproceedings{CTT100582554,
  author = {T. Hatakeyama and K. Fushinobu and K. Okazaki and M. Ishizuka},
  title = {Electro-Thermal Analysis and Monte Carlo Simulation for Thermal Issue in Si Devices},
  booktitle = {Proc. InterPACK 09},
  year = 2009,
}

@inproceedings{CTT100582537,
  author = {畠山友行 and 岡崎健 and 伏信一慶 and 石塚勝},
  title = {熱・電気連成解析における緩和時間が発熱に与える影響},
  booktitle = {第46回日本伝熱シンポジウム講演論文集},
  year = 2009,
}

@inproceedings{CTT100588965,
  author = {T. Hatakeyama and K. Fushinobu and K. Okazaki},
  title = {Impact of the Device Design on Electro-Thermal Properties of Si Devices},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100566432,
  author = {Yasufumi Yamamoto and Tomoyuki Hatakeyama and Kazuyoshi Fushinobu and Ken Okazaki},
  title = {Electro-Thermal Analysis for Compact Heat Generation Model of Si MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100588963,
  author = {T. Hatakeyama and K. Fushinobu and K. Okazaki},
  title = {Temperature and Applied Voltage Dependence of the Device Interactions in Bulk Si CMOS},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100557016,
  author = {山本泰史 and 畠山友行 and 伏信一慶 and 岡崎健},
  title = {Si MOSFETにおけるコンパクト発熱モデルのための熱・電気連成解析},
  booktitle = {第４５回日本伝熱シンポジウム講演論文集},
  year = 2008,
}

@inproceedings{CTT100557015,
  author = {畠山友行 and 伏信一慶 and 岡崎健},
  title = {Si CMOS内デバイス間相互作用に関する実験},
  booktitle = {第４５回日本伝熱シンポジウム講演論文集},
  year = 2008,
}

@inproceedings{CTT100544067,
  author = {Tomoyuki Hatakeyama and Kazuyoshi Fushinobu and Ken Okazaki},
  title = {ELECTRO-THERMAL ANALYSIS OF SUBMICRON Si MOSFET WITH ZONED MESH BASED ON SEMICONDUCTOR PHYSICS THEORY},
  booktitle = {Proc. The ASME-JSME 2007 Thermal Engineering and Summer Heat Transfer Conference},
  year = 2007,
}

@inproceedings{CTT100562145,
  author = {T. Hatakeyama and K. Fushinobu and K. Okazaki},
  title = {Modeling of Heat Generation and Heat Flow in CMOS Device},
  booktitle = {Tokyo Tech - ?? Workshop},
  year = 2007,
}

@inproceedings{CTT100533832,
  author = {畠山 友行 and 伏信 一慶 and 岡崎 健},
  title = {サブミクロンSi MOSFETの熱・電気連成解析におけるチャンネル部での最適メッシュサイズ},
  booktitle = {第44回日本伝熱シンポジウム講演論文集},
  year = 2007,
}

@inproceedings{CTT100544069,
  author = {Tomoyuki Hatakeyama and Kazuyoshi Fushinobu and Ken Okazaki},
  title = {Device level thermal management of sub-100 nm semiconductor devices},
  booktitle = {Book of abstracts, 3rd International Nanotechnology Conference on Communication and Cooperation},
  year = 2007,
}

@inproceedings{CTT100533823,
  author = {畠山 友行 and 伏信 一慶 and 岡崎 健},
  title = {サブミクロンSi MOSFETの熱・電気連成解析におけるメッシュサイズのゾーニング手法},
  booktitle = {熱工学コンファレンス2006講演論文集},
  year = 2006,
}

@inproceedings{CTT100411377,
  author = {T. Hatakeyama and K. Fushinobu and K. Okazaki},
  title = {Device Interactions of Submicron Si CMOS in Transient State},
  booktitle = {Proc. 17th ISTP},
  year = 2006,
}

@inproceedings{CTT100411375,
  author = {T. Hatakeyama and K. Fushinobu and K. Okazaki},
  title = {Temperature and Time Dependence of Device Interactions in Submicron Si CMOS},
  booktitle = {Proc. 9th AIAA/ASME Joint Thermophysics and Heat Transfer Conference},
  year = 2006,
}

@inproceedings{CTT100411374,
  author = {畠山友行 and 伏信一慶 and 岡崎健},
  title = {サブミクロンSi CMOSにおけるデバイス間相互作用の熱・電気連成解析},
  booktitle = {第43回日本伝熱シンポジウム講演論文集},
  year = 2006,
}

@inproceedings{CTT100411369,
  author = {Tomoyuki Hatakeyama and K. Fushinobu and KEN OKAZAKI},
  title = {Electro-thermal analysis of device interactions in Si CMOS structure},
  booktitle = {Proc. EMAP2005},
  year = 2005,
}

@inproceedings{CTT100390650,
  author = {Tomoyuki Hatakeyama and K. Fushinobu and KEN OKAZAKI},
  title = {Effect of the Device Structure in Electro-Thermal Analysis of Si CMOS},
  booktitle = {Proc. InterPACK'05},
  year = 2005,
}

@inproceedings{CTT100390649,
  author = {Tomoyuki Hatakeyama and K. Fushinobu and KEN OKAZAKI},
  title = {Electro-thermal analysis of interactions between Si MOSFETs in CMOS structures},
  booktitle = {Abstracts of Japan/US Joint Seminar on Nanoscale Transport Phenomena -Science and Engineering -},
  year = 2005,
}

@misc{CTT100602968,
  author = {畠山友行},
  title = {シリコンナノデバイス熱管理のための熱・電気連成現象解明},
  year = 2008,
}



@phdthesis{CTT100602968,
  author = {畠山友行},
  title = {シリコンナノデバイス熱管理のための熱・電気連成現象解明},
  school = {東京工業大学},
  year = 2008,
}