@book{CTT100433962,
author = {古屋一仁},
title = {エンサイクロペディア電子情報通信ハンドブック（副幹事長，分担）},
publisher = {オーム社},
year = 1998,
}
@book{CTT100433961,
author = {古屋一仁},
title = {先端デバイス材料ハンドブック（副幹事長，分担）},
publisher = {オーム社},
year = 1993,
}
@article{CTT100628828,
author = {N. Takebe and T. Kobayashi and H. Suzuki and Y. Miyamoto and K. Furuya},
title = {Fabrication of InP/InGaAs DHBTs with buried SiO2 wires},
journal = {IEICE Trans. Electron.},
year = 2011,
}
@article{CTT100619794,
author = {M. Yamada and T. Uesawa and Y. Miyamoto and K. Furuya},
title = {Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density},
journal = {IEEE Electron Device Lett.},
year = 2011,
}
@article{CTT100619792,
author = {H. Saito and Y. Matsumoto and Y. Miyamoto and K. Furuya},
title = {Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density},
journal = {Jpn. J. Appl. Phys.},
year = 2011,
}
@article{CTT100611953,
author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
title = {Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source},
journal = {Applied Physics Express},
year = 2010,
}
@article{CTT100610516,
author = {H. Saito and Y. Miyamoto and K. Furuya},
title = {Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-wide Mesa Structure and a Drain Current Density of 7 MA/cm2},
journal = {Applied Phys. Exp.},
year = 2010,
}
@article{CTT100610507,
author = {Y. Miyamoto and S. Takahashi and T. Kobayashi and Hiroyuki Suzuki and K. Furuya},
title = {Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector},
journal = {IEICE Trans. Electron.},
year = 2010,
}
@article{CTT100600644,
author = {Takafumi Uesawa and Masayuki Yamada and Yasuyuki Miyamoto and Kazuhito Furuya},
title = {Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases},
journal = {Japanese Journal of Applied Physics},
year = 2010,
}
@article{CTT100576788,
author = {Hisashi Saito and Yasuyuki Miyamoto and Kazuhito Furuya},
title = {Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain},
journal = {Applied Physics Express},
year = 2009,
}
@article{CTT100598411,
author = {So Nishimura and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
title = {Design and Simulation of Hot-Electron Diffraction Oservation by Scanning Probe – Quantitative Evaluation of Observation Possibility –},
journal = {Jap. J. Appl. Phys.},
year = 2008,
}
@article{CTT100598413,
author = {So Nishimura and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
title = {Design and Simulation of Hot-Electron Diffraction Oservation by Scanning Probe – Quantitative Evaluation of Observation Possibility –},
journal = {Jpn. J. Appl.Phys.},
year = 2008,
}
@article{CTT100549485,
author = {Mitsuhiko Igarashi and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
title = {Cutoff Frequency Characteristics of Gate-Control Hot Electron Transistors by Monte Carlo Simulation},
journal = {Physica Status Solidi(C)},
year = 2008,
}
@article{CTT100535067,
author = {Akira Suwa and Issei Kashima and Yasuyuki Miyamoto and Kazuhito Furuya},
title = {Increase in collector current in hot-electron transistors controlled by gate bias},
journal = {Japanese journal of Applied Physica},
year = 2007,
}
@article{CTT100535086,
author = {Yasuyuki Miyamoto and Masashi Ishida and Tohru Yamamoto and Tsukasa Miura and Kazuhito Furuya},
title = {InP buried growth of Si2 wires toward reduction of collector capacitance in HBT},
journal = {Journal of Crystal Growth},
year = 2007,
}
@article{CTT100523943,
author = {Nobuya Machida and Shunsuke Satoh and Kazuhito Furuya},
title = {Transfer efficiency in ballistic electron emission microscopy taking diffraction of emitted hot electrons into account},
journal = {Surface Science},
year = 2006,
}
@article{CTT100520776,
author = {Yasuyuki MIYAMOTO and Ryo NAKAGAWA and Issei KASHIMA and Masashi ISHIDA and Nobuya MACHIDA and Kazuhito FURUYA},
title = {Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer},
journal = {Trans. IECE of Japan},
year = 2006,
}
@article{CTT100520773,
author = {K. Furuya and N. Machida and M. Igarashi and R. Nakagawa and I. Kashima and M. Ishida and Y. Miyamoto},
title = {MC simulation of ultrafast transistor using ballistic electron in intrinsic semiconductor and its fabrication feasibility},
journal = {Journal of Physics: Conference Series},
year = 2006,
}
@article{CTT100520775,
author = {N. Machida and Y. Miyamoto and K. Furuya},
title = {Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism},
journal = {Jpn. J. Appl. Phys.},
year = 2006,
}
@article{CTT100389805,
author = {古屋一仁},
title = {量子効果デバイス研究の展望と課題},
journal = {2005年電子情報通信学会 チュートリアルセッション招待講演「化合物半導体電子デバイスの現状とその可能性－次世代エレクトロニクスの代替と補完－},
year = 2005,
}
@article{CTT100389831,
author = {K. Furuya and Y. Ninomiya and N. Machida and Y. Miyamoto},
title = {Double-Slit Interference Observation of Hot Electrons in Semiconductors --- Analysis of Experimental Data ---},
journal = {Japanese Journal of Applied Physics},
year = 2005,
}
@article{CTT100386989,
author = {五十嵐 and 中川 and 鹿嶋 and 町田 and 宮本 and 古屋},
title = {25nm幅エミッタInP系バリスティックトランジスタのエミッタ電流制御特性解析},
journal = {応用物理学会講演会},
year = 2005,
}
@article{CTT100386988,
author = {渡辺 and 丘 and 宮本 and 古屋},
title = {微細HBTのコレクタ中における横方向電流広がりの解析},
journal = {応用物理学会講演会},
year = 2005,
}
@article{CTT100389804,
author = {KAZUHITO FURUYA},
title = {InP ballistic hot electron transistors with reduced emitter width},
journal = {2005 Sweden-Japan International Workshop on Quantum Nano-Physics and Electronics, Kyoto, April 7th -8th},
year = 2005,
}
@article{CTT100386980,
author = {佐藤 and 狩野 and 町田 and 古屋},
title = {走査探針による非熱平衡電子回折実験における信号電流の見積もり},
journal = {応用物理学会講演会},
year = 2004,
}
@article{CTT100386982,
author = {町田 and 佐藤 and 古屋},
title = {相反定理による電子波回折シミュレーションの高速化},
journal = {応用物理学会講演会},
year = 2004,
}
@article{CTT100386983,
author = {R. Nakagawa and K. Takeuchi and Y. Yamada and Y. Miyamoto and K. Furuya},
title = {InP hot electron transistors with reduced emitter width for controllability of collector current by gate bias},
journal = {International Conference on Indium Phosphide and Related Materials},
year = 2004,
}
@article{CTT100386984,
author = {R. Nakagawa and K. Takeuchi and Y. Yamada and Y. Miyamoto and K. Furuya},
title = {エミッタ形状を変えてゲートによる制御性を高めたInP系ホットエレクトロントランジスタ},
journal = {応用物理学会講演会},
year = 2004,
}
@article{CTT100386985,
author = {R. Nakagawa and Y. Yamada and K. Takeuchi and T. Fujisaki and Y. Miyamoto and K. Furuya},
title = {InP系ホットエレクトロントランジスタにおける25nm微細幅エミッタの作製},
journal = {応用物理学会講演会},
year = 2004,
}
@article{CTT100387349,
author = {Y. Miyamoto and Y. Shirai and M. Yoshizawa and K. Furuya},
title = {20 nm Periodical Pattern by Calixarene Resists: Comparison of CMC[4]AOMe with MC[6]AOAc},
journal = {2004 International Microprocesses and Nanotechnology Conference},
year = 2004,
}
@article{CTT100383300,
author = {N. Machida and H. Kanoh and K. Furuya},
title = {Numerical Foundation of Hot-Electron Diffraction Experiment Based on Ballistic Electron Emission Microscope},
journal = {Japanese Journal of Applied Physics},
year = 2004,
}
@article{CTT100386981,
author = {佐藤 and 町田 and 古屋},
title = {FDTD法による三次元電子波回折シミュレーション},
journal = {応用物理学会講演会},
year = 2004,
}
@article{CTT100383302,
author = {Katsuhiko Takeuchi and Hiroshi Maeda1 and Ryo Nakagawa1 and Yasuyuki Miyamoto and Kazuhito Furuya},
title = {InP hot-electron transistors with emitter mesa fabricated between gate electrodes for reduction in emitter-gate gate-leakage current},
journal = {Jpn. J. Appl. Phys.},
year = 2004,
}
@article{CTT100386976,
author = {古屋一仁},
title = {ホットエレクトロンによるヤングの2重スリット干渉実験},
journal = {パリティ},
year = 2004,
}
@article{CTT100386977,
author = {町田 and 狩野 and 古屋},
title = {弾道電子放出顕微鏡によるホットエレクトロン回折実験の数値解析―量子相反性成立の起源―},
journal = {電子情報通信学会電子デバイス研究会技術報告},
year = 2004,
}
@article{CTT100386978,
author = {狩野 and 町田 and 古屋},
title = {BEEMを用いたホットエレクトロン回折実験における量子相反性成立の起源},
journal = {応用物理学会講演会},
year = 2004,
}
@article{CTT100386979,
author = {古屋 and 佐藤 and 町田},
title = {放射ホットエレクトロンの回折を考慮したBEEM輸送効率解析},
journal = {応用物理学会講演会},
year = 2004,
}
@article{CTT100520769,
author = {Yasuyuki Miyamoto and Ren Yamamoto and Hiroshi Maeda and Katuhiko Tekeuchi and Nobuya Machida and Lars-Erik Wernersson and Kazuhito Furuya},
title = {InP Hot Electron Transistors with a Buried Metal Gate},
journal = {Japanese Journal of Applied Physics},
year = 2003,
}
@article{CTT100489614,
author = {K. Takeuchi and H. Maeda and R. Nakagawa and Y. Miyamoto and K. Furuya},
title = {Wet Etching for Self-Aligned 0.1-mm-wide Emitter in InP/InGaAs HBT},
journal = {Topical Workshop on Heterostructure Microelectronics (TWHM'03)},
year = 2003,
}
@article{CTT100496075,
author = {Kazuhito Furuya and Yasunori Ninomiya and Nobuya Machida and Yasuyuki Miyamoto},
title = {Young's Double-Slit Interference Observation of Hot Electrons in Semiconductors},
journal = {PHYSICAL REVIEW LETTERS},
year = 2003,
}
@article{CTT100489646,
author = {狩野裕之 and 町田信也 and 古屋一仁},
title = {位相シフタによる電子波回折観測のための横コヒーレンス条件},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100489645,
author = {竹内克彦 and 前田 寛 and 中川 亮 and 宮本恭幸 and 古屋一仁},
title = {ゲート電極間にエミッタメサを作製したInP系ホットエレクトロントランジスタ},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100489644,
author = {町田信也 and 永塚浩之 and 古屋一仁},
title = {井戸幅揺らぎによるダブルバリア共鳴スペクトルの不均一広がり},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100489643,
author = {宮本恭幸 and 二宮泰徳 and 町田信也 and 古屋一仁},
title = {半導体中のホットエレクトロンによるダブルスリット干渉観測},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100489642,
author = {町田信也 and 鳥海陽平 and 古屋一仁},
title = {ホットエレクトロンダブルスリット透過のモード展開法による解析},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100489641,
author = {町田信也 and 古屋一仁 and 宮本恭幸 and 前田寛},
title = {超ヘテロナノ構造によるバリスティック伝導の数値シミュレーション},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100489637,
author = {横山啓吾 and 松田耕治 and 森田竜夫 and 新井俊希 and 宮本恭幸 and 古屋一仁},
title = {InP/InGaAs系HBT0.1-um幅エミッタの為のウェットエッチングの改善},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100489635,
author = {町田信也 and 古屋一仁 and 宮本恭幸 and 前田寛},
title = {超ヘテロナノ構造によるバリスティック伝導の数値シミュレーション},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100489634,
author = {K. Furuya and Y. Ninomiya and N. Machida and Y. Miyamoto},
title = {Young's Double-Slit Interference of Hot Electron in Semiconductors},
journal = {The 13th International Conference on Non-equilibrium Carrier Dynamics in Semiconductors (HCIS 13)},
year = 2003,
}
@article{CTT100489633,
author = {K. Furuya and Y. Ninomiya and N. Machida and Y. Miyamoto},
title = {Young’s double-slit interference experiment of hot electron in semiconductors},
journal = {Japan-UK 10+10 Meeting},
year = 2003,
}
@article{CTT100489632,
author = {K. Takeuchi and H. Maeda and R. Nakagawa and Y. Miyamoto and K. Furuya},
title = {InP hot electron transistors using modulation of gate electrodes sandwiching emitter mesa},
journal = {2003 International Conference on Solid State Devices and Materials},
year = 2003,
}
@article{CTT100477660,
author = {Y. Miyamoto and R. Yamamoto and H. Maeda and K. Takeuchi and L.-E. Wernersson and K. Furuya Furuya},
title = {InP Hot Electron Transistor with a Buried Metallic Gate for Electron Emission},
journal = {60th Annual Device Research Conference, Santa Barbara, CA, June },
year = 2002,
}
@article{CTT100477661,
author = {Y. Miyamoto and H. Nakamura and Y. Ninomiya and H. Oguchi and N. Machida and K. Furuya},
title = {Current modulation in fine electrode by hot electron passing through GaInAs/InP double slits},
journal = {International Conference on Indium Phosphide and Related Materials, Stockholm, Sweden},
year = 2002,
}
@article{CTT100477662,
author = {Y. Miyamoto and T. Arai and S. Yamagami and K. Matsuda and K. Furuya},
title = {Evaluation of base-collector capacitance in submicron buried metal heterojunction bipolar transistors},
journal = {The 2002 International Conference on Solid State Devices and Materials, Nagoya},
year = 2002,
}
@article{CTT100477663,
author = {K. Takeuchi and R. Yamamoto and H. Maeda and Y. Miyamoto and K. Furuya},
title = {Freestanding tungten wires for BM-HET},
journal = {2002 International Microprocesses and Nanotechnology Conference, Tokyo},
year = 2002,
}
@article{CTT100471579,
author = {町田信也 and 古屋一仁},
title = {位相シフタ干渉観測デバイスにおける3次元 BEEM転送効率の解析},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100471578,
author = {永塚浩之 and 町田信也 and 古屋一仁},
title = {二重障壁共鳴を用いた位相コヒー レンス評価における構造不均一の影響},
journal = {第63回応用物理学 会学術講演会},
year = 2002,
}
@article{CTT100471577,
author = {二宮泰徳 and 中村弘道 and 宮本恭幸 and 町田信也 and 古屋一仁},
title = {GaInAs/InP ダブルスリットを通過したホットエレクトロンの電流変調},
journal = {第49回応用物理学関係連合講演会},
year = 2002,
}
@article{CTT100471576,
author = {町田信也 and 古屋一仁 and 深澤優壽 and 前堅一 and 平田朋彦 and 宮本大悟},
title = {BEEMを用いた電子波回折観測法の提案},
journal = {電 子情報通信学会技術研究報告},
year = 2002,
}
@article{CTT100471328,
author = {N. Machida and Y. Ninomiya and H. Nakamura and Y. Miyamoto and K. Furuya},
title = {Theoretical Explanation of Current Modulation by Magnetic Field Observed in Hot-Electron Double-Slit Experiment},
journal = {21st Electronic Materials Symposium (EMS-21), Izu-Nagaoka},
year = 2002,
}
@article{CTT100471327,
author = {N. Machida and M. Fukasawa and K. Furuya},
title = {Numerical Simulation toward Observation of Electron Wave Diffraction by Ballistic Electron Emission Microscope},
journal = {7th Int'l Conf. Nanometer-scale science and technology (nano-7), 21st European conference on surface science (ecoss-21), Malmo, Sweden},
year = 2002,
}
@article{CTT100471326,
author = {N. Machida and H. Nagatsuka and M. Nagase and K. Furuya},
title = {Phase Coherence and Temperature Dependence of Current-Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode},
journal = {Jpn. J. Appl. Phys.},
year = 2002,
}
@article{CTT100471325,
author = {宮本恭幸 and 古屋一仁},
title = {InP系ヘテロ接合バイポーラトランジスタの高速化技術},
journal = {応用物理},
year = 2002,
}
@article{CTT100471324,
author = {T. Morita and T. Arai and H. Nagatsuka and Y. Miyamoto and K. Furuya},
title = {Fabrication of InP/GaInAs Double Heterojunction Bipolar Transistors with 0.1-um-Wide Emitter},
journal = {Jpn. J. Appl. Phys.},
year = 2002,
}
@article{CTT100477664,
author = {前田寛 and 山本練 and 竹内克彦 and 宮本恭幸 and 古屋一仁},
title = {ノンドープInP中の埋込金属周期電極構造を用いたホットエレクトロントランジスタ},
journal = {第63回応用物理学会学術講演会 新潟},
year = 2002,
}
@article{CTT100489611,
author = {K. Takeuchi and R. Yamamoto and H. Maeda and Y. Miyamoto and K. Furuya},
title = {Freestanding Tungten Wires for BM-HET},
journal = {2002 International Microprocesses and Nanotechnology Conference},
year = 2002,
}
@article{CTT100451464,
author = {T. Arai and S. Yamagami and Y. Miyamoto and KAZUHITO FURUYA},
title = {Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors with Buried Tungsten Wires},
journal = {Jpn. J. Appl. Phys.},
year = 2001,
}
@article{CTT100449976,
author = {N. Machida and K. Furuya},
title = {Coherent hot-electron emitter},
journal = {Japanese Journal of Applied Physics},
year = 2001,
}
@article{CTT100449977,
author = {B. Y. Zhang and K. Furuya},
title = {Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopy},
journal = {Applied Surface Science},
year = 2001,
}
@article{CTT100449978,
author = {M. Nagase and K. Furuya and N. Machida},
title = {Phase-braking effect appearing in the current-voltage characteristics of double- barrier resonant-tunneling diodes - Theoretical fitting over four orders of magnitude-},
journal = {Japanese Journal of Applied Physics},
year = 2001,
}
@article{CTT100449979,
author = {T. Arai and S. Yamagmi and Y. Miyamoto and K. Furuya},
title = {Reduction of base-collector capacitance in submicron InP/GaInAs heterojunction bipolar transistors with buried Tungsten wires},
journal = {Japanese Journal of Applied Physics},
year = 2001,
}
@article{CTT100450019,
author = {N. Machida and H. Tamura and K. Furuya},
title = {Numerical simulation of hot electron interference in solid-state biprism},
journal = {Springer Proceedings in Physics},
year = 2001,
}
@article{CTT100463467,
author = {Y. Miyamoto and H. Oguchi and H. Nakamura and Y. Ninomiya and K. Furuya},
title = {80 nm periodical ohmic contacts toward Young's double slit experiment using a semiconductor},
journal = {1st International Workshop on Quantum Nonplaner Nanostructures & Nanoelectronics, Tu-P31},
year = 2001,
}
@article{CTT100462164,
author = {B. Zhang and K. Furuya and S. Karasawa},
title = {Theoretical ratio of hot electron current to thermal electron current in scanning hot electron microscopy},
journal = {Journal of Applied Physics},
year = 2001,
}
@article{CTT100462208,
author = {KAZUHITO FURUYA},
title = {Hot Electron Modulation by Buried Metal Gate Toward Metal/Semiconductor Quantum Nanostructure Devices},
journal = {4th QNANO Workshop, Stockholm, June 13-15},
year = 2001,
}
@article{CTT100462209,
author = {K. Furuya and M. Nagase and N. Machida},
title = {Phase Breaking Effects Seen in I-V Curves of Resonant Tunneling Diodes},
journal = {Progress in Electromagnetic Research Symposium, Osaka, Japan},
year = 2001,
}
@article{CTT100462210,
author = {前 and 柄沢 and 宮本 and 古屋},
title = {GaAs/AlAs/InGaP ショットキーコンタクト構造真空エミッタ},
journal = {応用物理学会学術講演会},
year = 2001,
}
@article{CTT100462211,
author = {M. Nagase and K. Furuya and N. Machida and M. Kurahashi},
title = {Current Peak Characteristics of Triple-Barrier Resonant-Tunneling Diodes with and without Phase Breaking},
journal = {Japanese Journal of Applied Physics},
year = 2001,
}
@article{CTT100462305,
author = {町田 and 古屋},
title = {半導体へテロ構造による電子波面広がり制御の可能性},
journal = {電子情報通信学会全国大会},
year = 2001,
}
@article{CTT100462306,
author = {永塚 and 町田 and 古屋},
title = {二重障壁共鳴トンネ ルダイオードによる電子位相コヒーレンスの温度特性評価の可能性},
journal = {応用物理学会学術講演会},
year = 2001,
}
@article{CTT100462307,
author = {永瀬 and 町田 and 倉橋 and 古屋},
title = {位相相関法を用いた三重障壁共鳴トンネルダイオードの電流ピーク幅解析},
journal = {応用物理学会学術講演会},
year = 2001,
}
@article{CTT100462308,
author = {町田 and 古屋},
title = {電子波デバイスの相反性},
journal = {応用物理学会学術講演会},
year = 2001,
}
@article{CTT100462309,
author = {町田 and 古屋},
title = {走査探針による新しい固体電子波検出実験},
journal = {電子情報通信学会全国大会},
year = 2001,
}
@article{CTT100463465,
author = {L.-E. Wernersson and R. Yamamoto and E. Lind and I. Pietzonka and W. Seifert and Y. Miyamoto and K. Furuya and L. Samuelson},
title = {Attractive Potential around a Buried Metallic Gate in a Schottky Collector Hot Electron Transistor},
journal = {28th International Symposium on Compound Semiconductors 2001 (ISCS2001), MoP-33},
year = 2001,
}
@article{CTT100463468,
author = {K. Furuya and M. Nagase and N. Machida},
title = {Phase Breaking Effects Seen in I-V Curves of Resonant Tunneling Diodes},
journal = {Progress in Electromagnetic Research Symposium (PIERS2001), 3P6b-4},
year = 2001,
}
@article{CTT100437681,
author = {栗田昌尚 and 宮本恭幸 and 古屋一仁},
title = {GaInAs/AlAs/InP構造真空エミッタからの電子放出},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100435256,
author = {M. Nagase and M. Suhara and Y. Miyamoto and K. Furuya},
title = {Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes},
journal = {Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100435257,
author = {M. Nagase and K. Furuya and N. Machida},
title = {Phase breaking effect appearing in I-V characteristics of double-barrier resonant tunneling diodes---Theoretical fitting over four orders of magnitudes---},
journal = {Int'l Conf. on Solid State Devices and Materials, Sendai, Aug.2000},
year = 2000,
}
@article{CTT100435258,
author = {B. Y. Zhang and K. Furuya},
title = {Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopy},
journal = {Applied Surface Science(accepted for publication)},
year = 2000,
}
@article{CTT100435259,
author = {B. Y. Zhang and S. Karasawa and N. Sakai and Y. Miyamoto and K. Furuya},
title = {Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopy},
journal = {10th International Conference on Solid Films and Surface, July 9-13, Princeton, USA},
year = 2000,
}
@article{CTT100435260,
author = {B. Y. Zhang and Y. Ikeda and Y. Miyamoto and K. Furuya and N. Kikegawa},
title = {A versatile hot electron emitter of InGaAs/AlAs heterostructure with wide energy range at high current density},
journal = {Physica},
year = 2000,
}
@article{CTT100435261,
author = {B. Hansson and N. Machida and K. Furuya and L. -E. Wernersson and L. Samuelson},
title = {Simulation of interference patterns in solid-state biprism devices},
journal = {Solid-State Electron},
year = 2000,
}
@article{CTT100435262,
author = {N. Machida and K. Furuya},
title = {Numerical simulation of hot electron interference in a solid state biprism: Conditions for interference observation},
journal = {J. Appl. Phys.},
year = 2000,
}
@article{CTT100435263,
author = {T. Arai and Y. Harada and S. Yamagami and Y. Miyamoto and K. Furuya},
title = {First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance},
journal = {Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100435264,
author = {T. Arai and H. Tobita and Y. Harada and M. Suhara and Y. Miyamoto and K. Furuya},
title = {Toward nano-metal buried structure in InP - 20 nm wire and InP buried growth of tungsten},
journal = {Physica E},
year = 2000,
}
@article{CTT100435265,
author = {B. Gustafson and M. Suhara and K.Furuya and L. Samuelson and W. Seifert},
title = {Lateral current confinement in selectively grown resonant tunneling transistor with an embedded gate},
journal = {Physica E},
year = 2000,
}
@article{CTT100435266,
author = {N. Sakai and K. Furuya and B. Y. Zhang and S. Karasawa},
title = {Theoretical relation between spatial resolution and efficiency of detection in scanning hot electron microscope},
journal = {Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100437588,
author = {T. Arai and Y. Harada and S. Yamagami and Y. Miyamoto and K. Furuya},
title = {CBC reduction in GaInAs/InP buried metal heterojunction bipolar transistor},
journal = {Twelfth International Conference on Indium Phosphide and Related Materials (IPRM'00)},
year = 2000,
}
@article{CTT100437589,
author = {T. Arai and H. Tobita and Y. Miyamoto and K. Furuya},
title = {GaAs buried growth over tungsten stripes using TEG and TMG},
journal = {11th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XI)},
year = 2000,
}
@article{CTT100437674,
author = {Y. Miyamoto and M. Kurita and K. Furuya},
title = {Vacuum Microelectronic Electron Emitter by InP Double Barrier Diode Toward RFApplication},
journal = {58th Annual Device Research Conference},
year = 2000,
}
@article{CTT100437675,
author = {T. Arai and S. Yamagami and Y. Okuda and Y. Harada and Y. Miyamoto and K. Furuya},
title = {InP DHBT with 0.5mm Wide Emitter along <010> Direction toward BM-HBT with Narrow Emitter},
journal = {Topical Workshop on Heterostructure Microelectronics (TWHM' 00)},
year = 2000,
}
@article{CTT100437676,
author = {Y. Miyamoto and R. Yamamoto and H. Tobita and K. Furuya},
title = {Very shallow n-GaAs ohmic contact with 10nm thick GaInAs layer},
journal = {19th Electronic Materials Symposium},
year = 2000,
}
@article{CTT100437677,
author = {新井俊希 and 原田恵充 and 山上滋春 and 宮本恭幸 and 古屋一仁},
title = {Buried Metal Heterojunction Bipolar Transistorにおけるベースコレクタ間容量の低減},
journal = {第47回 応用物理学会関係連合講演会},
year = 2000,
}
@article{CTT100437678,
author = {新井俊希 and 飛田洋 and 宮本恭幸 and 古屋一仁},
title = {TMGとTEGを材料としたタングステン細線 のGaAs OMVPE埋め込み成長},
journal = {第47回応用物理学会関係連合講演会},
year = 2000,
}
@article{CTT100437679,
author = {小口博嗣 and 佐藤航一郎 and 宮本恭幸 and 古屋一仁},
title = {電子波干渉素子用GaInAs上80nm周期 電極の特性},
journal = {第47回応用物理学会関係連合講演会},
year = 2000,
}
@article{CTT100437680,
author = {山上滋春 and 新井俊希 and 奥田慶文 and 宮本恭幸 and 古屋一仁},
title = {BMHBT微細化に向けた0.5μ ｍ幅エミッタInP系DHBTの作製と評価},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100437697,
author = {柄沢伸也 and 張 冰陽 and 阪井則雄 and 宮本恭幸 and 古屋一仁},
title = {走査型ホットエレクトロン顕 微鏡のためのホットエレクトロンエミッタ},
journal = {第47回応用物理学会関係連合講演会},
year = 2000,
}
@article{CTT100437698,
author = {張 冰陽 and 阪井則雄 and 柄沢伸也 and 古屋一仁},
title = {Estimation of Potential Profile and Hot Electron Transmission Through the air Gap from I-S Characteristics of STM},
journal = {第47回応用物理学会関係連合講演会},
year = 2000,
}
@article{CTT100437699,
author = {阪井則雄 and 張 冰陽 and 柄沢伸也 and 古屋一仁},
title = {走査型ホットエレクトロン顕微鏡における分解能と検出効率の関係},
journal = {第47回応用物理学会関係連合講演会},
year = 2000,
}
@article{CTT100437700,
author = {町田信也 and 古屋一仁},
title = {半導体／金属構造を用いた電子波干渉実験の提案},
journal = {第47回応用物理学会関係連合講演会},
year = 2000,
}
@article{CTT100437701,
author = {町田信也 and 古屋一仁},
title = {固体バイプリズム中ホットエレクトロン波干渉の数値シミュレーション：干渉観測条件},
journal = {第47回応用物理学会関係連合講演会},
year = 2000,
}
@article{CTT100437702,
author = {永瀬成範 and 古屋一仁 and 町田信也},
title = {位相破壊を採り入れた電子波共鳴特性の解析について},
journal = {第47回応用物理学会関係連合講演会},
year = 2000,
}
@article{CTT100437703,
author = {張 冰陽 and 古屋一仁 and 柄沢伸也 and 平田朋彦},
title = {Hot electron current to thermal electron current ratio in scanning hot electron microscopy(SHEM)},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100437704,
author = {柄沢伸也 and 張 冰陽 and 平田朋彦 and 古屋一仁},
title = {走査型ホットエレクトロン顕微鏡における検出可能な電流値の実験的評価},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100437705,
author = {永瀬成範 and 倉橋将樹 and 古屋一仁},
title = {位相破壊を考慮した三重障壁共鳴トンネルダイオードの共鳴特性解析},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100437706,
author = {町田信也 and 古屋一仁 and 岡田達也},
title = {コヒーレントホットエレクトロンエミッタ},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100463464,
author = {N. Machida and H. Tamura and K. Furuya},
title = {Numerical Simulation of Hot Electron Interference in Solid-State Biprism},
journal = {25th International Conference on the Physics of Semiconductors (ICPS25), M261},
year = 2000,
}
@article{CTT100546703,
author = {Yasuyuki Miyamoto and Atsushi Kokubo and Hirotsugu Oguchi and Masaki Kurahashi and and KAZUHITO FURUYA},
title = {Fabrication and transport properties of 50-nm-wide Au/Cr/ GaInAs electrode for electron wave interference device},
journal = {Applied Surface Science},
year = 2000,
}
@article{CTT100435255,
author = {B. Y. Zhang and K. Furuya and Y. Ikeda and N. Kikegawa and M. Watanabe and T. Maruyama},
title = {Theoretical and Experimental Characterizations of Hot Electron Emission of n-Si/CaF2/Au Emitter Used in Hot Electron Detection Experiment},
journal = {The 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11), Kyoto, Japan, July 19-23},
year = 1999,
}
@article{CTT100546702,
author = {M. Suhara and L. -E. Wernersson and B. Gustafson and W. Seifert and L. Samuelson and K. Furu and KAZUHITO FURUYA},
title = {A Study of the Regrown Semiconductor Interface Including Patterned Metal Using Resonant Tunneling Structures Fabricated in the Overgrowth Process},
journal = {7th International Conference on the Formation of Semiconductor Interfaces (ICFSI7), Goethenberg},
year = 1999,
}
@article{CTT100546701,
author = {M. Suhara and L. E. Wernersson and B. Gustafson and N .Carlsson and W. Seifert and A. Gustafson and J. O. Malm and A. Litwin and L. Samuelson an and KAZUHITO FURUYA},
title = {Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures},
journal = {Jpn.J.Appl.Phys.},
year = 1999,
}
@article{CTT100432253,
author = {B. Y. Zhang and Y. Ikeda and K. Furuya and N. Kikegawa},
title = {Comparison between Fermi-Dirac and Boltzmann Methods for Band-bending Calculations of Si/CaF2/Au Hot Electron Emitter},
journal = {Jpn. J. Appl. Phys.},
year = 1999,
}
@article{CTT100432254,
author = {B. Y. Zhang and K. Furuya and Y. Ikeda and N. Kikegawa},
title = {Design and experimental characteristics of n-Si/CaF2/Au hot electron emitter for use in scanning hot electron microscopy},
journal = {Jpn. J. Appl. Phys.},
year = 1999,
}
@article{CTT100432255,
author = {B. Y. Zhang and K. Furuya and Y. Ikeda and N. Kikegawa and M. Watanabe and T. Maruyama},
title = {Theoretical and experimental characterizations of hot electron emission of n-Si/CaF2/Au emitter used in hot electron detection experiment},
journal = {Physica B},
year = 1999,
}
@article{CTT100433140,
author = {K. Furuya and Y. Miyamoto and N. Machida and T. Arai},
title = {Toward Quantum Devices of Metal/Semiconductor Structure},
journal = {The 3rd Sweden-Japan International Workshop on Quantum Nanoelectronics},
year = 1999,
}
@article{CTT100435216,
author = { N. Machida and K. Furuya},
title = {Analysis of Electron Coherence Effects in Solid-State Biprism Devices},
journal = {The 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) Kyoto, Japan, July 19-23},
year = 1999,
}
@article{CTT100435217,
author = { B. Y. Zhang and Y. Ikeda and Y. Miyamoto and K. Furuya and N. Kikegawa},
title = {A Versatile Hot Electron Emitter of InGaAs/AlAs Heterostructure with Wide Energy Range at High Current Density},
journal = {The 9th International Conference on Modulated Semiconductor Structures (MSS9), Fukuoka, Japan, July 12-16},
year = 1999,
}
@article{CTT100435253,
author = {B. Gustafson and M. Suhara and K. Furuya and L. Samuelson and W. Seifert and L. E. Werners},
title = {Lateral Quantum Confinement in Selectively Grown Resonant Tunneling Transistor with an Embedded Gate},
journal = {The 9th International Conference on Modulated Semiconductor Structures (MSS9), Fukuoka, Japan, July 12-16},
year = 1999,
}
@article{CTT100463466,
author = {Y. Miyamoto and A. Kokubo and H. Oguchi and M. Kurahashi and K. Furuya},
title = {Anomalous Current in 50 nm width Au/Cr/GaInAs Electrode for electron wave interference device},
journal = {Third International Symposium on Control of Semiconductor Interface, A5-6},
year = 1999,
}
@article{CTT100432247,
author = {N. Machida and K. Furuya},
title = {Analysis of Phase-Breaking Effects in Triple-Barrier Resonant-Tunneling Diodes},
journal = {Jpn. J. Appl. Phys.},
year = 1999,
}
@article{CTT100432248,
author = {N. Machida and K. Furuya},
title = {Analysis of Electron Incoherence Effects in Solid-State Biprism Devices},
journal = {Physica B},
year = 1999,
}
@article{CTT100432249,
author = {L. E. Wernersson and M. Suhara and N .Carlsson and K. Furuya and B. Gustafson and A. Litwin and L. Samuelson and W. Seifert},
title = {Lateral confinement in a resonant tunneling transistor with a buried metallic gate},
journal = {Appl. Phys. Lett.},
year = 1999,
}
@article{CTT100432251,
author = {Y. Miyamoto and H. Tobita and K. Oshima and K. Furuya},
title = {Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE},
journal = {Solid-State Electronics},
year = 1999,
}
@article{CTT100432252,
author = {N. Kikegawa and B. Y. Zhang and Y. Ikeda and N. Sakai and K. Furuya and M. Asada and M. Wanatabe and W. Saito},
title = {Shortening of detection time for observation of hot electron spatial distribution by scanning hot electron microscopy},
journal = {Jpn. J. Appl. Phys.},
year = 1999,
}
@article{CTT100432074,
author = {A. Kokubo and T. Hattori and H. Hongo and M. Suhara and Y. Miyamoto and K. Furuya},
title = {25nm pitch GaInAs/InP buried structure by calixarene resist},
journal = {Jpn. J. Appl. Phys.},
year = 1998,
}
@article{CTT100432075,
author = {Y. Miyamoto and A. Kokubo and T. Hattori and H. Hongo and M. Suhara and K. Furuya},
title = {25nm ptich GaInAs/InP buried structure:improvement by calixarene as EB resist ane TBP as P-source in OMVPE regrowth},
journal = {J. Vac. Sci. Technol.},
year = 1998,
}
@article{CTT100432076,
author = {N. Kikegawa and K. Furuya and F. Vazuqez and Y. Ikeda},
title = {Characteristics and reduction of noise in scanning hot electron microscope},
journal = {Jpn. J. Appl. Phys.},
year = 1998,
}
@article{CTT100432077,
author = {N. Machida and B. Hansson and K. Furuya and L. Wernersson and L. Samuelson},
title = {Proposal for a solid state biprism device},
journal = {Jpn. J. Appl. Phys.},
year = 1998,
}
@article{CTT100432256,
author = {T. Oobo and R. Takemura and K. Sato and M. Suhara and Y. Miyamoto and K. Furuya},
title = {Effect of space layer thickness in energy level width narrowing in GaInAs/InP resonant tunneling diodes grown by OMVPE},
journal = {Jpn. J. Appl. Phys.},
year = 1998,
}
@article{CTT100432257,
author = {H. Hongo and Y. Miyamoto and J. Suzuki and M. Suhara and K. Furuya},
title = {Wrapped alignment mark for fabrication of interference/diffraction hot electron devices},
journal = {Jpn. J. Appl. Phys.},
year = 1998,
}
@article{CTT100432258,
author = {Y. Miyamoto and J. Yoshinaga and H. Toda and T. Arai and H. Hongo and T. Hattori and A. Kokubo and K. Furuya},
title = {Submicron GaInAs/InP hot electron transistors by EBL process and size dependence of current gain},
journal = {Solid State Electronics},
year = 1998,
}
@article{CTT100428685,
author = {H.Hongo H.Tanaka and Y.Miyamoto and T.Otake and J.Yoshinaga and K.Furuya},
title = {Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs toward hot electron interference/diffraction devices},
journal = { Microelectronic Engineering},
year = 1997,
}
@article{CTT100506636,
author = {M.Suhara and C.Nagao and H.Honji and Y.Miyamoto and K.Furuya and R.Takemura},
title = {Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes},
journal = {J.Cryst.Growth},
year = 1997,
}
@article{CTT100506637,
author = {D.Kobayashi and K.Furuya and N.Kikegawa and F.Vazquez},
title = {Estimation of lateral resolution in scanning hot electron microscope},
journal = {Jpn.J.Appl.Phys},
year = 1997,
}
@article{CTT100506638,
author = {T.Oobo and R.Takemura and M.Suhara and Y.Miyamoto and K.Furuya},
title = {High Peak to Valley Current Ratio GaInAs/GaInP Resonant Tinneling Diodes},
journal = {Jpn.J.Appl.Phys.},
year = 1997,
}
@article{CTT100506639,
author = {H.Hongo and Y.Miyamoto and M.Gault and K.Furuya},
title = {Influence of a finite energy width in electron distribution to an experiment of hot electron double-slit interference - a design of the emitter structure},
journal = {J. Appl. Phys.},
year = 1997,
}
@article{CTT100428687,
author = {H.HongoY.Miyamoto and M.Suhara and K.Furuya},
title = {A 40nm pitch double slit experiment of hot electrons in a semiconductor under a magnetic field},
journal = {Appl.Phys.Lett.},
year = 1997,
}
@article{CTT100428686,
author = {R.Takemura M.Suhara and T.Oobo and Y.Miyamoto and K.Furuya},
title = {High-temperature estimation of phase coherent length of hot electron using GaInAs/InP triple-barrier resonant tunneling diodes grown by OMVPE},
journal = { Jpn.J.Appl.Phys.},
year = 1997,
}
@article{CTT100428684,
author = {H. Hongou and Y. Miyamoto and M. Suhara and K. Furuya},
title = {Hot electron interference by 40nm-pitch double slit buried in semiconductor},
journal = { Microelectronic Engineering},
year = 1997,
}
@article{CTT100506633,
author = {R.Takemura and M.Suhara and Y.Miyamoto and K.Furuya and Y.Nakamura},
title = {Current-voltage characteristics of triple-barrier resonant tunneling diodes including coherent and incoherent tunneling process},
journal = { IEICE of Jpn.},
year = 1996,
}
@article{CTT100506635,
author = {Y. C. Kang and M. Suhara and K. Furuya and M. Gault and R. Takemura},
title = {Undoped spacer layer effects on the evaluation on the coherent length in GaInAs/InP resonant tunneling diodes},
journal = { Physica B},
year = 1996,
}
@article{CTT100428682,
author = {H. Hongo T. Hattori and Y. Miyamoto and K. Furuya and K. Matsunuma and M. Watanabe and M. Asada},
title = {Seventy nm pitch patterning on CaF2 by e-beam exposure: An inorganic resist and a contamination resist},
journal = {Jpn. J. Appl. Phys.},
year = 1996,
}
@article{CTT100428683,
author = {Vazquez K. Furuya and D. Kobayashi},
title = {Proposal of a technique to detect subsurface hot electrons with a scanning probe microscope},
journal = { Jpn. J. Appl. Phys.},
year = 1996,
}
@article{CTT100428681,
author = {F. Vazquez K. Furuya and D. Kobayashi},
title = {Detecting subsurface hot electrons with a scanning probe microscope},
journal = {J. Appl. Phys.},
year = 1996,
}
@article{CTT100442253,
author = {KAZUHITO FURUYA},
title = {Detection of hot electron current with scanning hot electron microscopy},
journal = {Appl. Phys. Lett.},
year = 1996,
}
@article{CTT100506629,
author = {H. Hongo and H. Tanaka and Y. Miyamoto and J. Yoshinaga and K. Furuya},
title = {Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs},
journal = {Jpn. J. Appl. Phys.},
year = 1996,
}
@article{CTT100506632,
author = {F. Vazquez and K. Furuya and D. Kobayashi},
title = {Possibility of hot electron detection with a scanning probe microscope},
journal = { Physica B},
year = 1996,
}
@article{CTT100506631,
author = {N. Machida and K. Furuya and M. Gault},
title = {Theoretical study of resonant tunneling diodes with impurity ions located in wells},
journal = { Jpn. J. Appl. Phys.},
year = 1996,
}
@article{CTT100428679,
author = {H. Hongo J. Suzuki and M. Suhara and Y. Miyamoto and K. Furuya},
title = {Nanostructure alignment for hot electron interference/diffraction devices},
journal = {Jpn. J. Appl. Phys.},
year = 1995,
}
@article{CTT100428678,
author = {M. Gault H. Matsuura and K. Furuya and P. Mawby and M. S. Towers},
title = {The inclusion of a finite scattering time in the simulation of quantum effect devices},
journal = {Solid State Electronics},
year = 1995,
}
@article{CTT100428369,
author = {H. Matsuura K. Furuya},
title = {Wavefront spread of hot electrons generated by planar tunnel emitters},
journal = {Jpn. J. Appl. Phys.},
year = 1995,
}
@article{CTT100428680,
author = {Y.C.Kang M.Suhara and K.Furuya and R.Koizumi},
title = {Evaluation of hot electron coherent length using well width dependence of the resonance characteristics of resonant tunneling diodes},
journal = { Jpn.J.Appl.Phys.},
year = 1995,
}
@article{CTT100506628,
author = {M.Suhara and R. Takemura and K.Furuya},
title = {Possibility of high-temperature evaluation of phase coherent length of hot electrons in triple-barrier resonant tunneling diodes},
journal = { Jpn.J.Appl.Phys. - ()},
year = 1995,
}
@article{CTT100428367,
author = {M. Suhara and Y. Miyamoto and H. Hongo and J. Suzuki and K. Furuya},
title = {GaInAs/InP organometallic vapor phase epitaxy regrowth for ultrafine buried heterostructures with 50nm pitch toward electron wave devices},
journal = {J. Crystal Growth},
year = 1994,
}
@article{CTT100506627,
author = {K. Furuya and N. Machida and Y. C. Kang},
title = {Analysis of phase breaking effect in resonant tunneling diodes using correlation function},
journal = {Jpn. J. Appl. Phys.},
year = 1994,
}
@article{CTT100546700,
author = {末松 and 古屋一仁},
title = {レンズ状媒質に沿うビーム波のベクトル解析},
journal = {電子通信学会論文誌},
year = 1994,
}
@article{CTT100428368,
author = {古屋一仁},
title = {電子波干渉とデバイス化の可能性},
journal = {電気学会誌},
year = 1994,
}
@article{CTT100428366,
author = {H. Hongo and Y. Miyamoto and J. Suzuki and M. Funayama and K. Furuya},
title = {Ultrafine fabrication technique for hot electron interference/Diffraction devices},
journal = {Jpn. J. Appl. Phys.},
year = 1994,
}
@article{CTT100428364,
author = {Y. C. Kang and K. Furuya and M. Suhara and Y. Miyamoto},
title = {Estimation of phase coherent length of hot electrons in GaInAs using resonant tunneling diodes},
journal = {Jpn. J. Appl. Phys.},
year = 1994,
}
@article{CTT100442254,
author = {Y. C. Kang and K. Furuya and M. Suhara and Y. Miyamoto},
title = {Estimation of phase coherent length of hot electrons in GaInAs using resonant tunneling diodes},
journal = {Jpn. J. Appl. Phys.},
year = 1994,
}
@article{CTT100428365,
author = {M. Gault H. Matsuura and K. Furuya and P. Mawby},
title = {Coherent properties of electron emission from a single barrier},
journal = {J. Appl. Phys.},
year = 1994,
}
@article{CTT100506595,
author = {M. Takakuwa and K. Furuya},
title = {The analysis of waveguideing effects on the minimum transferable linewith of an ultrafine X-ray mask},
journal = {IEICE Trans. Electron.},
year = 1993,
}
@article{CTT100506626,
author = {T. Sekiguchi and Y. Miayamoto and K. Furuya},
title = {Influence of impurities on the performance of doped well GaInAs/InP resonant tunneling diode},
journal = {Jpn. J. Appl. Phys.},
year = 1993,
}
@article{CTT100506625,
author = {K. Kurihara and Y. Miyamoto and K. Furuya},
title = {Observation of InP surfaces after (NH4)2Sx treatment by a scanning tunneling microscope},
journal = {Jpn. J. Appl. Phys.},
year = 1993,
}
@article{CTT100428304,
author = {古屋一仁},
title = {電子波干渉とコヒーレンス},
journal = {応用物理},
year = 1993,
}
@article{CTT100506594,
author = {T. Sekiguchi and K. Furuya},
title = {Calculation of the potential distribution around an impurity-atom-wire--the validity of the Thomas-Fermi approximation},
journal = {IEICE Trans. Electron.},
year = 1993,
}
@article{CTT100506593,
author = {T. Sekiguchi and Y. Miyamoto and K. Furuya},
title = {High P/V ratio of GaInAs/InP resonant tunneling diode grown by OMVPE},
journal = {J. Cryst. Growth},
year = 1992,
}
@article{CTT100506592,
author = {Y. Miyamoto and K. Furuya and D. Yamazaki},
title = {Fabrication of ultrafine x-ray mask using precise crystal growth technique},
journal = {Jpn. J. Appl. Phys.},
year = 1992,
}
@article{CTT100426970,
author = {T. Suemasu Y. Miyamoto and K. Furuya},
title = {Improvement of organometallic vapor phase epitaxy regrown GaInAs/InP heterostructure by surface treatment},
journal = {Jpn. J. Appl. Phys.},
year = 1991,
}
@article{CTT100442255,
author = {KAZUHITO FURUYA},
title = {Coherent Electron Devices},
journal = {Jpn. J. Appl. Phys.},
year = 1991,
}
@article{CTT100506591,
author = {古屋一仁 and 宮本恭幸},
title = {量子細線構造の形成},
journal = {日本結晶学会誌},
year = 1991,
}
@article{CTT100426969,
author = {K. FuruyaY. Miyamoto},
title = {GaInAsP/InP organometallic vapor phase epitaxy for research and fabrication of devices},
journal = {Int. J. Highspeed Electronics},
year = 1990,
}
@article{CTT100427576,
author = {Y. MiyamotoM. Kohtoku and S. Yamaura and K. Furuya},
title = {High-quality n-GaInAs grown by OMVPE using Si2H6 by high-velocity flow},
journal = {Jpn. J. Appl. Phys.},
year = 1990,
}
@article{CTT100427579,
author = {E. Inamura and K. Furuya},
title = {Relation between coherence and current density of ballistic electron transport},
journal = {Trans. IEICE},
year = 1990,
}
@article{CTT100427578,
author = {T. Yamamoto and Y. Miyamoto and M. Ogawa and E. Inamura and K. Furuya},
title = {Buried rectangular GaInAs/InP corrugations of 70nm pitch by OMVPE},
journal = {Electron. Lett.},
year = 1990,
}
@article{CTT100427577,
author = {S.Yamaura and Y. Miyamoto and K. Furuya},
title = {High current gain GaInAs/InP hot electron transistor},
journal = {Electron. Lett.},
year = 1990,
}
@article{CTT100426968,
author = {T. Yamamoto and E. Inamura and Y. Miyamoto and K.Furuya},
title = {OMVPE Buried Ultrafine Periodic Structures in GaInAs and InP},
journal = {Microelectronic Engineering},
year = 1990,
}
@article{CTT100428237,
author = {Y. Miyamoto S. Yamaura and K. Furuya},
title = {Negative differential conductance due to resonant states in GaInAs/InP hot electron transistors},
journal = {Appl. Phys.Lett.},
year = 1990,
}
@article{CTT100506620,
author = {宮本恭幸 and 古屋一仁},
title = {化学エッチング},
journal = {応用物理},
year = 1989,
}
@article{CTT100428236,
author = {KAZUHITO FURUYA},
title = {Possibility of High-Speed Device on Electron-Wave Principle},
journal = {J. Crystal Growth},
year = 1989,
}
@article{CTT100428235,
author = {KAZUHITO FURUYA},
title = {Transient Response of Aharonov-Bohm Effect},
journal = {Jpn. J. Appl. Phys.},
year = 1989,
}
@article{CTT100428231,
author = {KAZUHITO FURUYA},
title = {電子波デバイス},
journal = {電子情報通信学会誌},
year = 1989,
}
@article{CTT100506621,
author = {K. Uesaka and S.Yamaura and Y. Miyamoto and K. Furuya},
title = {High efficiency hot-electron transport in GaInAs/InP hot electron transistor grown by OMVPE},
journal = {Electron. Lett.},
year = 1989,
}
@article{CTT100506624,
author = {宮本恭幸 and 古屋一仁},
title = {化学エッチング（量子効果デバイスのための微細プロセス技術）},
journal = {応用物理},
year = 1989,
}
@article{CTT100506623,
author = {E. Inamura and Y. Miyamoto and S. Tamura and K. Furuya and Y. Suematsu},
title = {Very Fine Corrugations Formed on InP by Wet Chemical Etching and Electron Beam Lithography},
journal = {Electron. Lett.},
year = 1989,
}
@article{CTT100506622,
author = {K. Furuya and K. Kurishima and S. Samadi},
title = {Theoretical Characteristics of Electron Diffraction Transistor},
journal = {Trans. IEICE Japan},
year = 1989,
}
@article{CTT100506617,
author = {K. Kurishima and K. Furuya and S. Samadi},
title = {Theoretical Study of Electron Wave Diffraction Caused by Transverse Potential Grating--Effect of Incident Angle--},
journal = {IEEE J. QE.},
year = 1989,
}
@article{CTT100506618,
author = {Y.Miyamoto and K.Uesaka and S.Yamaura and K.Furuya},
title = {Observation of quantum coherence properties of hot electron},
journal = {IEEE Trans. ED},
year = 1989,
}
@article{CTT100506619,
author = {E. Inamura and Y. Miyamoto and S. Tamura and T. Takasugi and K. Furuya},
title = {Wet Chemical Etching for Ultrafine Periodic Structure:Rectangular InP Corrugations of 70nm Pitch and 100 nm Depth},
journal = {Jpn. J. Appl. Phys.},
year = 1989,
}
@article{CTT100506613,
author = {K. Furuya and K. Kurishima},
title = {Electron wave diffraction by nanometer grating and its application for high-speed transistors},
journal = {J. Vac. Sci. Tech.},
year = 1988,
}
@article{CTT100506611,
author = {P.Daste and Y. Miyake and M. Cao, Y. and Miyamoto and S. Arai and Y. Suematsu and K. Furuya},
title = {Fabrication Technique for GaInAsP/InP Quantum Wire Structure by LP-MOVPE},
journal = {J. Cryst. Growth},
year = 1988,
}
@article{CTT100506615,
author = {M.Cao and P. Daste and Y. Miyamoto and Y. Miyake and S. Nogiwa and S. Arai and K. Furuya and Y. Suematsu},
title = {GaInAsP/InP Single-Quantum-Well (SQW) Laser with Wire-like Active Region Towards Quantum Wire Laser},
journal = {Electron. Lett.},
year = 1988,
}
@article{CTT100506616,
author = {K.Furuya and K. Kurishima and T. Yamamoto},
title = {Proposal of Electron Diffraction Transistor},
journal = {Trans. IEICE Japan},
year = 1988,
}
@article{CTT100506612,
author = {Y. Miyamoto and K. Uesaka and M. Takadou and K. Furuya and Y. Suematsu},
title = {OMVPE Conditions for GaInAs/InP Heterointerfaces and Superlattices,},
journal = {J. Cryst. Growth},
year = 1988,
}
@article{CTT100506614,
author = {K. Furuya and K. Kurishima},
title = {Theoretical Properties of Electron Wave Diffraction Due to Transversally Periodic Structure in Semiconductors},
journal = {IEEE J. QE.},
year = 1988,
}
@article{CTT100506608,
author = {K. Ishihara and S. Kinoshita and K. Furuya and Y. Miyamoto and K. Uesaka and M. Miyauchi},
title = {GaInAs/InP Hot Electron Transistors Grown by OMVPE},
journal = {Jpn. J. Appl. Phys.},
year = 1987,
}
@article{CTT100506607,
author = {H. Fukui and K. Furuya and Y. Suematsu},
title = {Suppression of mode hopping noise caused by externalreflection in dynamic single mode (DSM) lasers},
journal = {Trans. IEICE Japan},
year = 1987,
}
@article{CTT100506610,
author = {宮本恭幸 and 古屋一仁},
title = {半導体レーザ用四元混晶の有機金属気相成長法},
journal = {応用物理},
year = 1987,
}
@article{CTT100428225,
author = {Y. Miyamoto and M. Cao and K. Furuya and Y. Suematsu},
title = {GaInAsP/InP Single Quantum-Well Lasers by OMVPE},
journal = {Jpn. J. Appl. Phys.},
year = 1987,
}
@article{CTT100428224,
author = {Y. Miyamoto and M. Cao and Y. Shingai and K. Furuya Y. Suematsu and K. G. Ravikumar and S. Arai},
title = {Light Emission from Quantum-Box Structure by Current Injection},
journal = {Jpn. J. Appl. Phys.},
year = 1987,
}
@article{CTT100428223,
author = {K. Furuya},
title = {Novel high-speed transistor using electron-wave diffraction},
journal = {J. Appl. Phys.},
year = 1987,
}
@article{CTT100506609,
author = {Y. Miyamoto and C. Watanabe and M. Nagashima and K. Furuya and Y. Suematsu},
title = {Fabrication of GaInAsP/InP heterostructure for 1.5μm lasers by OMVPE},
journal = {Trans. IEICE Japan},
year = 1987,
}
@article{CTT100506604,
author = {C. Watanabe and S. Kinoshita and K. Furuya and Y. Miyamoto},
title = {GaInAs/InP MOSFET by Organometallic Vapor Phase Epitaxy and Water Oxidation Techniques},
journal = {Trans. IEICE Japan},
year = 1986,
}
@article{CTT100506606,
author = {N. Nagashima and Y. Miyamoto and C. Watanabe and Y. Suematsu and K. Furuya},
title = {1.55μm GaInAsP/InP Buried Heterostructure Lasers with Multiple p-n Current Blocking Layer Entirely Grown by Low-Pressure OMVPE},
journal = {Trans. IECE Japan},
year = 1986,
}
@article{CTT100506605,
author = {H. Fukui and Y. Suematsu and K. Furuya and Y. Tohmori and S. Arai},
title = {Reflection noise measurement of dynamic single mode lasers},
journal = {Trans. IECE Japan},
year = 1986,
}
@article{CTT100506603,
author = {N. Eda and K. Furuya and F.Koyama and Y. Suematsu},
title = {Axial Mode Selectivity in Active Distributed-Reflector for Dynamic-Single-Mode Lasers},
journal = {IEEE/OSA J. Lightwave Tech.},
year = 1985,
}
@article{CTT100442252,
author = {N. Eda and K. Furuya and F. Koyama and Y. Suematsu},
title = {Axial Mode Selectivity in Active Distributed-Reflector for Dynamic-Single-Mode Lasers},
journal = {IEEE/OSA J. Lightwave Tech.},
year = 1985,
}
@article{CTT100428222,
author = {KAZUHITO FURUYA},
title = {Dependence of Linewidth Enhancement Factor α on Waveguide Structure in Semiconductor Lasers},
journal = {Electron. Lett.},
year = 1985,
}
@article{CTT100428210,
author = {K. Sekartedjo and N. Eda and K. Furuya and Y. Suematsu},
title = {1.5μm Phase-shifted DFB Laser by EBX and Mass-Transport Techniques},
journal = {Electron. Lett.},
year = 1985,
}
@article{CTT100428209,
author = {K. SekartedjoK. and Furuya and Y. Suematsu},
title = {1.54μm Phase Adjusted InGaAsP/InP Lasers with Mass-Transported Windows},
journal = {Appl. Phys. Lett.},
year = 1985,
}
@article{CTT100428208,
author = {S. Yang and Y. Miyamoto and C. Watanabe and M. Nagashima and K. Furuya and Y. Suematsu},
title = {Gain and Loss of GaInAsP/InP(λg=1.5μｍ) Grown by OMVPE Estimated from Lasing Characeristics},
journal = {Trans. IECE Japan},
year = 1985,
}
@article{CTT100428207,
author = {M. NagashimaY. Miyamoto and K. Furuya and Y.Suematsu and C. Watanabe and S. Yang},
title = {Mass Transported 1.55μｍ GaInAsP/InP BH Laser Grown by OMVPE},
journal = {Trans. IECE Japan},
year = 1985,
}
@article{CTT100428206,
author = {Y. Miyamoto and C. Watanabe and M. Nagashima and K. Furuya and Y. Suematsu},
title = {OMVPE Grown GaInAsP/InP BH Laser on p-Type Substrate},
journal = {Trans. IECE Japan},
year = 1985,
}
@article{CTT100709421,
author = {FUMIO KOYAMA and K. Sekartedjo and B. Broberg and K. Furuya and Y. Suematsu},
title = {Active distributed reflector laser phase adjusted by groove region},
journal = {The Japanese Journal of Applied Physics},
year = 1984,
}
@article{CTT100708375,
author = {FUMIO KOYAMA and Y.Suematsu and K.Kojima and K.Furuya and K. Furuya},
title = {1.5μm Phase Adjusted Active Distributed Reflector Laser for Dynamic Single-Mode Operation},
journal = {Electron. Lett.},
year = 1984,
}
@article{CTT100708377,
author = {FUMIO KOYAMA and K. Sekartedjo and N. Eda and K. Furuya and Y. Suematsu and T. Tanbun-ek},
title = {1.5μm Phase-Shifted DFB Lasers for Single-Mode Operation},
journal = {Electronics Letters},
year = 1984,
}
@article{CTT100427797,
author = {S. Sugou and A. Kameyama and Y. Miyamoto and K. Furuya and Y. Suematsu},
title = {Conditions for OMVPE Growth of GaInAsP/InP Crystal},
journal = {Jpn. J. Appl. Phys.},
year = 1984,
}
@article{CTT100506600,
author = {L. A. Coldren and K. Furuya and B. I. Miller},
title = {On the Formation of Planar-Etched Facets in GaInAsP/InP Double Heterostructure Lasers},
journal = {J. Electrochem. Soc.:Solid-State Science and Technology},
year = 1983,
}
@article{CTT100427789,
author = {S. Sugou and A. Kameyama and H. Katsuda and Y. Miyamoto and K. Furuya andY. Suematsu},
title = {Alloy Composition and Flow Rates in GaxIn1-xAsyP1-y Lattice-Matched to InP Grown by MO-CVD},
journal = {Electron. Lett.},
year = 1983,
}
@article{CTT100506601,
author = {K. Furuya and K. Yoshida and K. Honjo and Y. Suematsu},
title = {Precise Control of Grating Pitch by Electron-Beam Exposure System for Integrated Optics },
journal = {Trans. IECE Japan. },
year = 1983,
}
@article{CTT100506602,
author = {F. Koyama and T. Tanbun-ek and S. Arai and S. Wang and Y. Suematsu and K. Furuya},
title = {Suppression of Intensity Fluctuation of a Longitudinal Mode in Directly Modulated GaInAsP/InP Dynamic Single-Mode Laser },
journal = {Electron. Lett. },
year = 1983,
}
@article{CTT100506597,
author = {L. A. Coldren and K. Furuya and B. I. Miller},
title = {Etched Mirror and Groove-Coupled GaInAsP/InP Laser Devices for Integrated Optics},
journal = {IEEE J. QE},
year = 1982,
}
@article{CTT100506599,
author = {K. Furuya and B. I. Miller and L. A. Coldren and R. E. Howard},
title = {A Novel Deposit/Spin Waveguide Interconnection (DSWI)---Technique for Semiconductor Integrated Optics---},
journal = {Electron. Lett.},
year = 1982,
}
@article{CTT100506598,
author = {L. A. Coldren and K. Furuya and B. I. Miller, J. A. and Rentschler},
title = {Combined Dry and Wet Etching Techniques to Form Planar (011) Facets in GaInAsP/InP double Heterostructures},
journal = {Electron. Lett.},
year = 1982,
}
@article{CTT100506596,
author = {K. Furuya, B. I. and Miller and L. A. Coldren and R. E. Howard},
title = {A Novel Deposit/Spin Waveguide Interconnection(DSWI) for Semiconductor Integrated Optics},
journal = {IEEE J. QE},
year = 1982,
}
@article{CTT100427552,
author = {Y. Kidoh and Y. Suematsu and K. Furuya},
title = {Polarization Control on Output of Single-Mode Optical Fibers},
journal = {IEEE J.QE.},
year = 1981,
}
@article{CTT100427551,
author = {K. Furuya and L. A. Coldren and B. I. Miller and J. A. Rentschler},
title = {Crystallographic Facets Chemically Etched in GaInAsP/InP for Integrated Optics},
journal = {Electron. Lett.},
year = 1981,
}
@article{CTT100427774,
author = {M. Kubota and T. Oohara and K. Furuya and Y.Suematsu},
title = {Electro-Optical Polarization Control on Single-Mode Optical Fibers},
journal = {Electron. Lett.},
year = 1980,
}
@article{CTT100427775,
author = {Y. Sakakibara and K. Furuya and K. Utaka and Y. Suematsu},
title = {Single Mode Oscillation under High-Speed direct Modulation in GaInAsP/InP Integrated Twin-Guide Lasers with Distributed Bragg Reflectors},
journal = {Electron. Lett.},
year = 1980,
}
@article{CTT100427776,
author = {K. Furuya and Y. Suematsu},
title = {Random-Bend Loss in Single-Mode and Parabolic-Index Multi-Mode Optical Fiber Cables},
journal = {Applied Optics},
year = 1980,
}
@article{CTT100426616,
author = {M. Kubota K. Furuya and Y. Suematsu},
title = {Random-Bend Loss-Evalution in Single Mode Optical Fiber with Various Index Profiles },
journal = {Trans. IECE Japan },
year = 1980,
}
@article{CTT100506590,
author = {K. Furuya and M. Miyamoto and Y.Suematsu},
title = {Bandwidth Limitation due to Harmonic Distortion in Single-Mode Optical Fibers},
journal = {Proc. IEEE},
year = 1979,
}
@article{CTT100506589,
author = {K. Furuya and M. Miyamoto and Y. Suematsu},
title = {Bandwidths of Single-Mode Optical Fibers},
journal = {Trans. IECE Japan},
year = 1979,
}
@article{CTT100426615,
author = {K. Furuya and Y. Suematsu and Y. Sakakibara and M. Yamada},
title = {Influence of Intraband Electronic Relaxation Oscillation of Injection Lasers},
journal = {Trans. IECE Japan},
year = 1979,
}
@article{CTT100506588,
author = {K. Furuya and Y. Suematsu and S. Sugou},
title = {Integrated Optical Branching Filter Consisting of Three-Dimensional Waveguide and Its Nonradiative Condition},
journal = {IEEE Trans. on Circuits and Systems},
year = 1979,
}
@article{CTT100426591,
author = {Y. Sakakibara and K. Furuya and Y. Suematsu and Y. Itaya},
title = {Direct Modulation Characteristics of GaInAsP/InP D.H.Lasers with Various Stripe Widths Measured by Sharp-Pulse Medthod},
journal = {Electron. Lett.},
year = 1979,
}
@article{CTT100426414,
author = {S. Ishikawa and K. Furuya and Y. Suematsu},
title = {Vector Wave Analysis of Broadband Multimode Optical Fibers with Optimum Refractive Index Dstribution},
journal = {J. Opt. Soc. Am.},
year = 1978,
}
@article{CTT100426590,
author = {Y. Suematsu T. Hong and K. Furuya},
title = {Reduction of Resonance-Like Peak in Direct-Modulation of Injection Laser due to Carrier Diffusion and External Circuits},
journal = {NTZ},
year = 1978,
}
@article{CTT100426415,
author = {K. Furuya and Y. Suematsu},
title = {An Optimum Refractive Index Profile of Broadband Multimode Optical Fibers},
journal = {Trans. IECE Japan},
year = 1978,
}
@article{CTT100506587,
author = {H. Tokiwa and Y. Suematsu and K. Furuya},
title = {Estimation of Coupling Length in Mode-Coupled Multimode Optical Fibers},
journal = {Trans. IECE Japan},
year = 1978,
}
@article{CTT100426413,
author = {K. Furuya and Y. Suematsu and T. Hong},
title = {Reduction of Resonance-Like Peak in Direct-Modulation due to Carrier Diffusion in Injection Laser},
journal = {Appl. Optics.},
year = 1978,
}
@article{CTT100426412,
author = {K. Furuya and Y. Suematsu and H. Tokiwa},
title = {Coupling Length due to Random Bending in Multimode Optical Fibers},
journal = {Optical and Quantaum Elecronics},
year = 1978,
}
@article{CTT100426411,
author = {K. Furuya and Y.Suematsu},
title = {Random Bend Losses in Single-Mode Optical-Fiber Cables: Power-Spectrum Estimation from Spectral Losses},
journal = {Electron. Lett.},
year = 1978,
}
@article{CTT100426403,
author = {K. FuruyaT. Chong and Y. Suematsu},
title = {Low-Loss Splicing of Single-Mode Fibers by Tapered-Butt-Joint Method},
journal = {Trans. IECE Japan},
year = 1978,
}
@article{CTT100426402,
author = {Y. Suematsu and K. Furuya},
title = {Theoretical Spontaneous Emission Factor of Injection Lasers},
journal = {Trans. IECE Japan},
year = 1977,
}
@article{CTT100426400,
author = {K. Furuya and Y. Suematsu and J. Nayyer and S. Ishikawa and F. Tagami},
title = {External Higher-Index Mode Filters for Band Widening of Multimode Optical Fibers},
journal = {Appl. Phys. Lett.},
year = 1975,
}
@article{CTT100426401,
author = {Y. Suematsu and K. Furuya},
title = {Quasi-Guided Modes and Related Radiation Losses in Optical Dielectric Waveguides with External-Higher-Index Surroundings},
journal = {IEEE Trans. MTT},
year = 1975,
}
@article{CTT100426395,
author = {Y. Suematsu and K. Furuya and K. Shibata and S. Ibukuro},
title = {Optical Second Harmonic Generation Due To Guided Wave Structure Consisting of Quartz and Glass Film},
journal = {IEEE J.QE.},
year = 1974,
}
@article{CTT100426399,
author = {古屋 and 末松},
title = {外部高屈折率層付レンズ状媒質の姿態フィルタ特性},
journal = {電子通信学会論文誌},
year = 1974,
}
@article{CTT100426393,
author = {古屋 and 末松},
title = {外部高屈折率層付誘電体導波路の放射損},
journal = {電子通信学会論文誌},
year = 1974,
}
@article{CTT100426394,
author = {末松 and 古屋},
title = {多姿態誘電体光導波路の屈折率分布と群遅延特性},
journal = {電子通信学会論文誌},
year = 1974,
}
@article{CTT100426389,
author = {末松 and 古屋 and 白田 and 千葉},
title = {光誘電体導波路の境界面の乱れによる散乱パターンと乱れの相関長の推定},
journal = {電子通信学会論文誌},
year = 1973,
}
@article{CTT100426388,
author = {Y. Suematsu and K. Furuya and T. Kambayashi},
title = {Focusing Properties of Thin-Film Lenslike Light Guide for Integrated Optics},
journal = {Appl. Phys. Lett.},
year = 1973,
}
@article{CTT100426392,
author = {末松 and 古屋},
title = {非対称薄膜光誘電体導波路の固有姿態と散乱損失},
journal = {電子通信学会論文誌},
year = 1973,
}
@article{CTT100426379,
author = {Y. Suematsu and K. Furuya and K. Chiba and M. Hakuta and R. Hasumi},
title = {Fundamental Transverse Electric Field (TE0) Mode Selection for Thin Film Asymmetric Light Guide},
journal = {Appl. Phys. Lett.},
year = 1972,
}
@article{CTT100426381,
author = {Y. Suematsu and K. Furuya and M. Hakuta and K. Chiba},
title = {Properties of Irregular Boundary of R-F Sputtered Glass Film for Light Guide},
journal = {Proc. IEEE(Letter)},
year = 1972,
}
@article{CTT100426380,
author = {Y. Suematsu and K. Furuya},
title = {Propagation Mode and Scattering Loss of Two-Dimensional Dielectric Waveguide with Gradual Distribution of Refractive-Index},
journal = {IEEE Trans. MTT},
year = 1972,
}
@inproceedings{CTT100610517,
author = {M. Yamada and T. Uesawa and Y. Miyamoto and K. Furuya},
title = {Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610518,
author = {T. Kanazawa and K. Wakabayashi and H. Saito and R. Terao and T. Tajima and S. Ikeda and Y. Miyamoto and K. Furuya},
title = {Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610523,
author = {H. Saito and Y. Miyamoto and K. Furuya},
title = {Vertical InGaAs FET with hetero-launcher and undoped channel},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610506,
author = {H. Saito and Y. Miyamoto and K. Furuya},
title = {Selective undercut etching for ultra narrow mesa structure in vertical InGaAs channel MISFET},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610493,
author = {若林和也 and 金澤 徹 and 齋藤尚史 and 寺尾良輔 and 池田俊介 and 宮本恭幸 and 古屋一仁},
title = {再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610494,
author = {寺尾良輔 and 金澤 徹 and 齋藤尚史 and 若林和也 and 池田俊介 and 宮本恭幸 and 古屋一仁},
title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610495,
author = {磯谷優治 and 小林 嵩 and 山口裕太郎 and 宮本恭幸 and 古屋一仁},
title = {Si基板上へ転写したInP系HBTの動作},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610496,
author = {齋藤尚史 and 楠崎智樹 and 松本 豊 and 宮本恭幸 and 古屋一仁},
title = {縦型InGaAs チャネルMISFET の極微細メサに向けた選択的ウェットエッチング},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610497,
author = {小林 嵩 and 鈴木裕之 and 武部直明 and 宮本恭幸 and 古屋一仁},
title = {SiO2細線埋め込みInP/InGaAs DHBTの作製},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610505,
author = {金澤 徹 and 若林和也 and 齋藤尚史 and 寺尾良輔 and 田島智宣 and 池田俊介 and 宮本恭幸 and 古屋一仁},
title = {III-V族サブミクロンチャネルを有する高移動度MOSFET},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100597640,
author = {金澤徹 and 若林和也 and 齋藤尚史 and 寺尾良輔 and 田島智宣 and 池田俊介 and 宮本恭幸 and 古屋一仁},
title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET},
booktitle = {電子情報通信学会技術研究報告 電子デバイス},
year = 2010,
}
@inproceedings{CTT100610504,
author = {山田真之 and 上澤岳史 and 宮本恭幸 and 古屋一仁},
title = {HBTにおける高電流密度動作時エミッタ充電時間の電流反比例特性からの逸脱},
booktitle = {電子情報通信学会技術研究報告 電子デバイス},
year = 2010,
}
@inproceedings{CTT100591555,
author = {Toru Kanazawa and Hisashi Saito and Kazuya Wakabayashi and Ryousuke Terao and Tomonori Tajima and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
title = {Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N+-InGaAs Source Region},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610499,
author = {H. Saito and Y. Miyamoto and K. Furuya},
title = {Fabrication of vertical InGaAs channel MISFET with heterostructure launcher and undoped channel},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610500,
author = {K. Wakabayashi and T. Kanazawa and H. Saito and R. Terao and S. Ikeda and Y. Miyamoto and K. Furuya},
title = {InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610502,
author = {武部直明 and 山下浩明 and 高橋新之助 and 宮本恭幸 and 古屋一仁},
title = {SiO2細線埋込InP系HBTにおけるCBr4を使ったin-situエッチング},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610490,
author = {齋藤尚史 and 楠崎智樹 and 松本 豊 and 宮本恭幸 and 古屋一仁},
title = {ヘテロランチャと真性チャネルを有する縦型InGaAs-MISFET の高駆動能力動作},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610488,
author = {楠崎智樹 and 齋藤尚史 and 松本 豊 and 宮本恭幸 and 古屋一仁},
title = {縦型InGaAs-MISFETの試作},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610491,
author = {若林和也 and 金澤 徹 and 齋藤尚史 and 田島智宣 and 寺尾良輔 and 宮本恭幸 and 古屋一仁},
title = {「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610492,
author = {山田真之 and 上澤岳史 and 宮本恭幸 and 古屋一仁},
title = {HBTにおける超高速動作時エミッタ充電時間の理論的解析},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100591551,
author = {金澤徹 and 齋藤尚史 and 若林和也 and 田島智宣 and 宮本恭幸 and 古屋一仁},
title = {MOVPE再成長n+ソースを有するⅢ-Ⅴ族高移動度チャネルMOSFET},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100591554,
author = {若林 和也 and 金澤 徹 and 齋藤 尚史 and 田島 智宣 and 寺尾 良輔 and 宮本 恭幸 and 古屋 一仁},
title = {再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100598419,
author = {YASUYUKI MIYAMOTO and Hiroaki Yamashita and Naoaki Takebe and KAZUHITO FURUYA},
title = {In-situ Etching in MOVPE for Thin Collector of InP HBT with Buried SiO2 Wire},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100598420,
author = {Takafumi Uesawa and Masayuki Yamada and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
title = {Monte Carlo Analysis of Base Transit Times of InP/Gaines Heterojunction Bipolar Transistors with Ultrathin Bases},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610503,
author = {武部直明 and 山下浩明 and 高橋新之助 and 齋藤尚史 and 小林 嵩 and 宮本恭幸 and 古屋一仁},
title = {SiO2細線埋込InP系HBTにおけるCBr4を使ったIn-situエッチング},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100598415,
author = {YASUYUKI MIYAMOTO and Toru Kanazawa and Hisashi Saito and KAZUHITO FURUYA},
title = {InGaAs/InP MISFET with epitaxially grown source},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100598417,
author = {YASUYUKI MIYAMOTO and Shinnosuke Takahashi and Takashi Kobayashi and Hiroyuki Suzuki and KAZUHITO FURUYA},
title = {Evaluation of collector current spreading of InGaAs SHBT with 75-nm-thick collector},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576790,
author = {H. Saito and Y. Miyamoto and K. Furuya},
title = {Vertical InGaAs MOSFET with Hetero-Launcher and Undoped Channel},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583670,
author = {Toru Kanazawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima},
title = {InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576981,
author = {峯崎純太郎 and 宮本恭幸 and 古屋一仁},
title = {InP/GaInAs位相シフタによる電子波回折観測可能性の向上},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583674,
author = {金澤徹 and 古屋一仁 and 宮本恭幸 and 齋藤尚史 and 若林和也 and 田島智宣},
title = {MOVPE再成長ソースを有するIII-V族MOSFETの電流特性},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610501,
author = {齋藤尚史 and 楠崎智樹 and 松本豊 and 宮本恭幸 and 古屋一仁},
title = {ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFET},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576982,
author = {上澤岳史 and 山田真之 and 宮本恭幸 and 古屋一仁},
title = {超薄層ベースInP/GaInAs HBTの組成傾斜によるベース走行時間短縮},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576791,
author = {齋藤尚史 and 金澤徹 and 宮本恭幸 and 古屋一仁},
title = {ヘ テロランチャと真性チャネルを有する縦型InGaAs-MOSFETの作製},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576972,
author = {上澤岳史 and 山田真之 and 宮本恭幸 and 古屋一仁},
title = {超薄層ベースInP 系HBT におけるGraded Base によるベース走行時間短縮},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100565411,
author = {宮本 恭幸 and 長谷川 貴史 and 齋藤 尚史 and 古屋 一仁},
title = {RF Characteristics of Schottky-Gate-Controlled Hot Electron Transistor},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100576980,
author = {高橋新之助 and 山下浩明 and 小林嵩 and 磯谷優治 and 鈴木裕之 and 宮本恭幸 and 古屋一仁},
title = {EB露光により作製したエミッタ幅200nmのInP/InGaAs SHBT},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100565410,
author = {T. Kanazawa and H. Saito and K. Wakabayashi and Y. Miyamoto and K. Furuya},
title = {Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100576977,
author = {上澤岳史 and 宮本恭幸 and 古屋一仁},
title = {InP/InGaAs HBTベース層におけるプラズモン散乱のモンテカルロ解析},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100576793,
author = {齋藤尚史 and 孟 伶我 and 宮本 恭幸 and 古屋 一仁},
title = {絶縁ゲート制御型ホットエレク トロントランジスタのゲート制御能力向上},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100583676,
author = {金澤徹 and 古屋一仁 and 宮本恭幸 and 齋藤尚史 and 若林和也 and 田島智宣},
title = {Ⅲ-Ⅴ族高駆動能力MOSFETへ向けたn+-InGaAsソース/ドレイン層の横方向埋め込み成長},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100576789,
author = {H. Saito and Y. Miyamoto and K. FUruya},
title = {Increment of voltage gain of InP/InGaAs Hot Electron Transistors controlled by insulated gate},
booktitle = {Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International},
year = 2008,
}
@inproceedings{CTT100563450,
author = {西村 想 and 荒井 剛 and 宮本恭幸 and 古屋一仁},
title = {弾道電子放出顕微鏡を利用した電子波回折観測の可能性},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100565408,
author = {Hisashi Saito and Takahiro Hino and Yasuyuki Miyamoto and Kazuhito Furuya},
title = {Hot electron transistor controlled by insulated gate with 70nm-wide emitter},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100576792,
author = {齋藤尚史 and 孟 伶我 and 宮本恭幸 and 古屋一仁},
title = {絶縁ゲート制御型ホットエレクト ロントランジスタの電圧利得向上},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100563452,
author = {山田朋宏 and 上澤岳史 and 古屋一仁 and 宮本恭幸},
title = {ゲート制御ホットエレクトロントランジスタのバリスティックモデル解析},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100549527,
author = {Shinnosuke Takahashi and Tsukasa Miura and Hiroaki Yamashita and Yasuyuki Miyamoto and Kazuhito Furuya},
title = {DC Characteristics of Heterojunction Bipolar Transistor with Buried SiO2 Wires in Collector},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100563449,
author = {山田朋宏 and 古屋一仁 and 宮本恭幸},
title = {先端ノンドープ構造ホットエレクトロンエミッタ充電時間解析},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100549526,
author = {Hiroaki Yamashita and Tsukasa Miura and Shinnosuke Takahashi and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
title = {Fabrication of 200-nm-thick SiO2 wires buried in InP for reduction in collector capacitance in InP/InGaAs DHBT},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100535168,
author = {M. Igarashi and N. Machida and Y. Miyamoto and K. Furuya},
title = {Cutoff Frequency Characteristics of Insulated-gate Hot-electron Transistors},
booktitle = {Organizing Committee of HCIS15},
year = 2007,
}
@inproceedings{CTT100535098,
author = {日野高宏 and 諏訪 輝 and 齋藤尚史 and 宮本恭幸 and 古屋一仁},
title = {絶縁ゲートホットエレクトロントランジスタのエミッタ微細化},
booktitle = {応用物理学会},
year = 2007,
}
@inproceedings{CTT100535097,
author = {山下浩明 and 三浦 司 and 高橋新之助 and 宮本恭幸 and 古屋一仁},
title = {SiO2細線埋め込みHBTにおけるコレクタ容量削減のための200nm厚細線},
booktitle = {応用物理学会},
year = 2007,
}
@inproceedings{CTT100535099,
author = {高橋新之助 and 三浦 司 and 山下浩明 and 宮本恭幸 and 古屋一仁},
title = {コレクタ層内にSiO2細線を埋め込んだHBTのDC特性},
booktitle = {応用物理学会},
year = 2007,
}
@inproceedings{CTT100535085,
author = {斎藤尚史 and 諏訪 輝 and 長谷川貴史 and 日野高宏 and 大野真也 and 五十嵐満彦 and 宮本恭幸 and 古屋一仁},
title = {絶縁ゲートにより制御するホットエレクトロントランジスタの走行層幅微細化},
booktitle = {電子情報通信学会},
year = 2007,
}
@inproceedings{CTT100535082,
author = {諏訪 輝 and 長谷川貴史 and 日野高宏 and 宮本恭幸 and 古屋一仁},
title = {絶縁ゲートにより制御するホットエレクトロントランジスタの作製},
booktitle = {電子情報通信学会 技術報告書},
year = 2006,
}
@inproceedings{CTT100543410,
author = {Kazuhito Furuya},
title = {Double-Slit Interference Observation of Hot Electrons in Semiconductors---Analysis of Experimental Data---},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100535104,
author = {諏訪 輝 and 長谷川貴史 and 日野高宏 and 宮本恭幸 and 古屋一仁},
title = {新ホットエレクトロントランジスタの室温動作にむけた新構造の提案},
booktitle = {応用物理学会},
year = 2006,
}
@inproceedings{CTT100535106,
author = {五十嵐満彦 and 山田朋宏 and 町田信也 and 宮本恭幸 and 古屋一仁},
title = {ゲート制御ホットエレクトロントランジスタの実験構造を考慮したモンテカルロ解析},
booktitle = {応用物理学会},
year = 2006,
}
@inproceedings{CTT100535102,
author = {甲斐敬紹 and 福山義人 and 宮本恭幸 and 古屋一仁},
title = {狭メサHBTの為のノンセルフアラインメント電子ビーム露光},
booktitle = {応用物理学会},
year = 2006,
}
@inproceedings{CTT100535100,
author = {西村 想 and 町田信也 and 古屋一仁},
title = {有効質量差と非放物線特性を考慮した電子波回折実験のシミュレーション},
booktitle = {応用物理学会},
year = 2006,
}
@inproceedings{CTT100520778,
author = {Y. Miyamoto and I. Kashima and A. Suwa and K. Furuya},
title = {Increase in currentdensity at 25-nm-wide emitter for InP hot-electron transistors without base layer},
booktitle = {64th Annual Device Research Conference},
year = 2006,
}
@inproceedings{CTT100535087,
author = {宮本恭幸 and 石田昌司 and 山本 徹 and 三浦 司 and 古屋一仁},
title = {MOVPEによるInP中のSi2細線埋込成長とそのHBTコレクタ容量低減への応用},
booktitle = {電子情報通信学会},
year = 2006,
}
@inproceedings{CTT100520779,
author = {N. Machida and Y. Miyamoto and K. Furuya},
title = {Minimum emitter charging time for heterojunction bipolar transistors},
booktitle = {The 18th Indium Phosphide and Related Materials Conference (IPRM2006)},
year = 2006,
}
@inproceedings{CTT100520777,
author = {Y. Miyamoto and M. Ishida and T. Yamamoto and T. Miura and K. Furuya},
title = {InP Buried growth of SiO2 wires toward reduction of collector},
booktitle = {13th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE -XIII)},
year = 2006,
}
@inproceedings{CTT100535127,
author = {町田信也 and 五十嵐満彦 and 山田朋宏 and 宮本恭幸 and 古屋一仁},
title = {ゲート制御ホットエレクトロントランジスタのモンテカルロ解析},
booktitle = {応用物理学会},
year = 2006,
}
@inproceedings{CTT100535133,
author = {古屋一仁 and 宮本恭幸 and 鹿嶋一生 and 諏訪 輝},
title = {ゲートにより制御するホットエレクトロントランジスタにおける電流量の増大},
booktitle = {応用物理学会},
year = 2006,
}
@inproceedings{CTT100535138,
author = {五十嵐満彦 and 町田信也 and 古屋一仁},
title = {ゲート制御ホットエレクトロントランジスタにおけるエミッタ充電時間のエミッタ幅依存性},
booktitle = {応用物理学会},
year = 2006,
}
@inproceedings{CTT100535140,
author = {町田信也 and 宮本恭幸 and 古屋一仁},
title = {ヘテロ接合バイポーラトランジスタの最小エミッタ充電時間},
booktitle = {応用物理学会},
year = 2006,
}
@inproceedings{CTT100535144,
author = {石田昌司 and 山本 徹 and 三浦 司 and 宮本恭幸 and 古屋一仁},
title = {SiO2細線埋め込み成長によるInP系HBTのコレクタ容量低減の提案},
booktitle = {応用物理学会},
year = 2006,
}
@inproceedings{CTT100535076,
author = {T. Kai and Y. Fukuyama and Y. Miyamoto and K. Furuya and K. Kurishima and S. Yamahata},
title = {Electron beam lithography for non self-aligned HBTs with extreamly narrow emitter mesa},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100397954,
author = {K. Furuya and N. Machida and R. Nakagawa and I. Kashima and M. Ishida and Y.Miyamoto},
title = {MC simulation and fabrication of ultrafast transistor using ballistic electron in intrinsic semiconductor},
booktitle = {Int. Conf. New Phenomena in Mesoscopic Systems and Surfaces and Interfaces of Mesoscopic Devices},
year = 2005,
}
@inproceedings{CTT100535148,
author = {佐藤俊介 and 町田信也 and 古屋一仁},
title = {電子波回折実験における波長広がりを考慮したバリスティック電流の数値解析},
booktitle = {応用物理学会},
year = 2005,
}
@inproceedings{CTT100535150,
author = {鹿嶋一生 and 古屋一仁 and 宮本恭幸 and 中川 亮},
title = {InP系ホットエレクトロントランジスタにおけるエミッタ接地の飽和特性とゲートリーク電流の低減},
booktitle = {応用物理学会},
year = 2005,
}
@inproceedings{CTT100391823,
author = {Y. Miyamoto and R. Nakagawa and I. Kashima and K. Takeuchi and Y. Yamada and T. Fujisaki and M. Ishida and KAZUHITO FURUYA},
title = {25 nm Wide Emitter and Precise Alignment between Gate and Emitter in InP Hot Electron Transistors},
booktitle = {Topical Workshop on Heterostructure Microelectronics},
year = 2005,
}
@inproceedings{CTT100535159,
author = {五十嵐満彦 and 中川 亮 and 鹿島一生 and 町田信也 and 宮本恭幸 and 古屋一仁},
title = {25nm幅エミッタInP系バリスティックトランジスタのエミッタ電流制御特性解析},
booktitle = {応用物理学会},
year = 2005,
}
@inproceedings{CTT100535160,
author = {宮本恭幸 and 石田昌司 and 野中俊宏 and 山本 徹 and 古屋一仁},
title = {InP系HBTコレクタ容量低減の為の金属細線埋込成長における流速増大による表面平坦化},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100535153,
author = {佐藤俊介 and 町田信也 and 古屋一仁},
title = {FDTD法による三次元電子波回折シミュレーション},
booktitle = {応用物理学会},
year = 2005,
}
@inproceedings{CTT100535157,
author = {渡辺康弘 and Wei-Bin Qiu and 宮本恭幸 and 古屋一仁},
title = {微細HBTのコレクタ中における横方向電流広がりの解析},
booktitle = {応用物理学会},
year = 2005,
}
@inproceedings{CTT100535156,
author = {町田信也 and 佐藤俊介 and 古屋一仁},
title = {相反定理による電子波回折シミュレーションの高速化},
booktitle = {応用物理学会},
year = 2005,
}
@inproceedings{CTT100397971,
author = {Y. Miyamoto and R. Nakagawa and I. Kashima and M. Ishida and K. Furuya},
title = {Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate},
booktitle = {Int. Conf. Solid State Devices and Mater},
year = 2005,
}
@inproceedings{CTT100397966,
author = {Y. Miyamoto and Y. Watanabe and W. Qiu and K. Furuya},
title = {Analysis of lateral current spreading in collector of submicron HBT},
booktitle = {Int. Conf. Indium Phosphide and Related Materials},
year = 2005,
}
@inproceedings{CTT100397969,
author = {Y and Miyamoto and R. Nakagawa and I. Kashima1 and K. Takeuchi and Y. Yamada and T. Fujisaki and M. Ishida and K. Furuya},
title = {25 nm Wide Emitter and Precise Alignment between Gate and Emitter in InP Hot Electron Transistors},
booktitle = {6th Top. WS Heterostructure Microelectronics},
year = 2005,
}
@inproceedings{CTT100397959,
author = {Y. Miyamoto and M. Ishida and T. Nonaka and T. Yamamoto and K. Furuya},
title = {Tungsten Buried Growth by Using Thin Flow-Liner for Small Collector Capacitance in InP HBT},
booktitle = {Int. Conf. Indium Phosphide and Related Materials},
year = 2005,
}
@inproceedings{CTT100667668,
author = {服部哲也 and 本郷廣生 and 宮本恭幸 and 古屋一仁 and 松沼 健司 and 渡辺正裕 and 浅田雅洋},
title = {電子ビーム露光によるCaF2無機レジスト70nm周期パターニング},
booktitle = {},
year = 1996,
}
@inproceedings{CTT100667597,
author = {末益崇 and 薗田大資 and 渡辺正裕 and 浅田雅洋 and 古屋一仁},
title = {Si/CaF2/Si(111)断面のSTM観察},
booktitle = {},
year = 1993,
}
@misc{CTT100595402,
author = {KAZUHITO FURUYA},
title = {誘電体光導波路の広帯域化に関する基礎研究},
year = 1975,
}
@misc{CTT100595979,
author = {KAZUHITO FURUYA},
title = {光微小回路用導波路の研究},
year = 1972,
}
@phdthesis{CTT100595402,
author = {KAZUHITO FURUYA},
title = {誘電体光導波路の広帯域化に関する基礎研究},
school = {東京工業大学},
year = 1975,
}
@mastersthesis{CTT100595979,
author = {KAZUHITO FURUYA},
title = {光微小回路用導波路の研究},
school = {東京工業大学},
year = 1972,
}