@book{CTT100804554,
  author = {Sugahara, S. and Shuto, Y. and Shuichiro Yamamoto},
  title = {Spin-Transistor Technology for Spintronics/CMOS Hybrid Logic Circuits and Systems},
  publisher = {},
  year = 2016,
}

@book{CTT100678456,
  author = {Satoshi Sugahara and Yota Takamura and Yusuke Shuto and Shuu’ichirou Yamamoto},
  title = {Field-Effect Spin-Transistors},
  publisher = {Springer Netherlands},
  year = 2014,
}

@book{CTT100425732,
  author = {S. Oda and S. Yamamoto and Z. Wang and H. Tobisaka and K. Nagata},
  title = {ATOMIC LAYER MOCVD OF OXIDE SUPERCONDUCTORS AND DIELECTRICS},
  publisher = {High-Temperature Superconductors and Novel Inorganic Materials, NATO ASI Series 3 (eds. by G. Van Tendeloo, E.V. Antipov and S.N. Putilin, Kluwer Academic, Dordorecht)},
  year = 1999,
}

@book{CTT100425731,
  author = {Shuu'ichirou Yamamoto and Atsushi Kawaguchi and Shunri Oda},
  title = {Critical Current Density of YBCO Ultra Thin Films Prepared by Atomic Layer MOCVD},
  publisher = {Advances in Superconductivity VII (eds. by K.Ysmafuji and T.Morishita Springer, Tokyo)},
  year = 1995,
}

@article{CTT100902513,
  author = {T. Akushichi and Y. Takamura and Y. Shiotsu and S. Yamamoto and S. Sugahara},
  title = {Spin Injection Behavior of CoFe/MgO/Si Tunnel Contacts: Effects of Radical Oxygen Annealing},
  journal = {J. Electron. Mater.},
  year = 2023,
}

@article{CTT100873419,
  author = {Hayato Yoshida and Yusaku Shiotsu and Daiki Kitagata and Shuichiro Yamamoto and Satoshi Sugahara},
  title = {Ultralow-Voltage Retention SRAM With a Power Gating Cell Architecture Using Header and Footer Power-Switches},
  journal = {IEEE Open Journal of Circuits and Systems},
  year = 2021,
}

@article{CTT100846255,
  author = {Y. Shiotsu and S. Yamamoto and Y. Shuto and H. Funakubo and M. K. Kurosawa and S. Sugahara},
  title = {Modeling and Design of a New Piezoelectronic Transistor for Ultralow-Voltage High-Speed Integrated Circuits},
  journal = {IEEE Trans. on Electron Devices},
  year = 2020,
}

@article{CTT100840211,
  author = {Daiki Kitagata and Shuichiro Yamamoto and SATOSHI SUGAHARA},
  title = {Proactive useless data flush architecture for nonvolatile SRAM using magnetic tunnel junctions},
  journal = {},
  year = 2020,
}

@article{CTT100814140,
  author = {D. Kitagata and S. Yamamoto and S. Sugahara},
  title = {Design and energy-efficient architectures for nonvolatile static random access memory using magnetic tunnel junctions},
  journal = {Jpn. J. Appl. Phys},
  year = 2019,
}

@article{CTT100754182,
  author = {Y. Takamura and Y. Shuto and S. Yamamoto and H. Funakubo and M. Kurosawa and S. Nakagawa and S. Sugahara},
  title = {Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM},
  journal = {Solid-State Electron.},
  year = 2016,
}

@article{CTT100695027,
  author = {R. Nakane and Y. Shuto and H. Sukegawa and Z.C. Wen and S. Yamamoto and S. Mitani and M. Tanaka and K. Inomata and S. Sugahara},
  title = {Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip},
  journal = {Solid-State Electronics},
  year = 2014,
}

@article{CTT100804795,
  author = {Shuichiro Yamamoto and Shuto, Y. and Sugahara, S.},
  title = {Nonvolatile flip-flop based on pseudo-spin-transistor architecture and its nonvolatile power-gating applications for low-power CMOS logic},
  journal = {EPJ Applied Physics},
  year = 2013,
}

@article{CTT100805460,
  author = {十山 圭介 and 久保田 瞬 and 山本修一郎 and 前島 英雄},
  title = {マルチコアでのメディア処理におけるプロセッサ動作時消費エネルギー低減方式の提案},
  journal = {映像情報メディア学会誌},
  year = 2012,
}

@article{CTT100804838,
  author = {Shuichiro Yamamoto and Shuto, Y. and Sugahara, S.},
  title = {Nonvolatile power-gating field-programmable gate array using nonvolatile static random access memory and nonvolatile flip-flops based on pseudo-spin-transistor architecture with spin-transfer-torque magnetic tunnel junctions},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100640885,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Evaluation and control of break-even time of nonvolatile SRAM based on spin-transistor architecture with spin-transfer-torque MTJs},
  journal = {J. Appl. Phys.},
  year = 2012,
}

@article{CTT100640889,
  author = {S. Yamamoto and Y. Shuto and S. Sugahara},
  title = {Nonvolatile delay flip-flop using spin-transistor architecture with spin transfer torque MTJs for power-gating systems},
  journal = {IET Electronics Letters},
  year = 2011,
}

@article{CTT100629902,
  author = {Shuu'ichirou  Yamamoto and Yusuke Shuto and Satoshi Sugahara},
  title = {Nonvolatile SRAM (NV-SRAM) Using Resistive Switching Devices: Variable-Transconductance MOSFET Approach},
  journal = {Jpn. J. Appl. Phys},
  year = 2010,
}

@article{CTT100629900,
  author = {S. Yamamoto and Satoshi Sugahara},
  title = {Nonvolatile Delay Flip-Flop Based on Spin-Transistor Architecture and Its Power-Gating Applications},
  journal = {Jpn. J. Appl. Phys.},
  year = 2010,
}

@article{CTT100629984,
  author = {Y. Shuto and R. Nakane and W. H. Wang and H. Sukegawa and S. Yamamoto and M. Tanaka and K. Inomata and S. Sugahara},
  title = {A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET},
  journal = {Appl. Phys. Exp.},
  year = 2010,
}

@article{CTT100575373,
  author = {三宅康夫 and 山本修一郎 and 前島英雄},
  title = {マスタ・スレーブ型マルチプロセッサにおける動的可変優先度バス制御方式とその評価},
  journal = {電子情報通信学会論文誌},
  year = 2009,
}

@article{CTT100575375,
  author = {Shuu'ichirou Yamamoto and Satoshi Sugahara},
  title = {Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology},
  journal = {Jpn. J. Appl. Phys.},
  year = 2009,
}

@article{CTT100583531,
  author = {S. Yamamoto and S. Sugahara},
  title = {Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture},
  journal = {Jpn. J. Appl. Phys.},
  year = 2009,
}

@article{CTT100575374,
  author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
  title = {Nonvolatile SRAM architecture using MOSFET-based spin-transistors},
  journal = {J. Appl. Phys.},
  year = 2009,
}

@article{CTT100388867,
  author = {Hyun-Soo Kim and Shuu'ichirou Yamamoto and Toru Ishikawa and Takaaki Fuchikami and Hiroshi Ohki and Hiroshi Ishiwara},
  title = {Fabrication and Characterization of 1k-bit 1T2C-Type Ferroelectric Memory Cell Array},
  journal = {Japanese Journal of Applied Physics},
  year = 2005,
}

@article{CTT100383130,
  author = {Shuu'ichirou Yamamoto},
  title = {Improvement of Data Readout Disturbance Effects in 1T2C-Type Ferroelectric Memory Array},
  journal = {Symposium Abstracts (The 16th International Symposium on Integrated Ferroelectrics) },
  year = 2004,
}

@article{CTT100383132,
  author = {Shuu'ichirou Yamamoto},
  title = {Fabrication and Characterization of 1k-bit 1T2C-Type Ferroelectric Memory Cell Array},
  journal = {Extended Abstract of the 2004 International Conference on Solid State Devices and Materials},
  year = 2004,
}

@article{CTT100383133,
  author = {Shuu'ichirou Yamamoto},
  title = {Improved Data Disturbance Effects in 1T2C-Type Ferroelectric Memory Array},
  journal = {Japanese Journal of Applied Physics},
  year = 2004,
}

@article{CTT100383131,
  author = {S. Yamamoto and T. Ishikawa and T.Fuchikami and H. Kim and K. Aizawa and B. Park and T. Furukawa and H. Ohki and S. Kikuchi and H. Hoko and H. Ishiwara},
  title = {Fabrication of 1K-Bit 1T2C-Type Ferroelectric Memory Cell Array},
  journal = {Symposium Abstracts (The 16th International Symposium on Integrated Ferroelectrics)},
  year = 2004,
}

@article{CTT100383127,
  author = {山本修一郎},
  title = {1T2C型強誘電体メモリアレイにおけるV/4データ書き込み法の提案},
  journal = {第51回応用物理学関係連合講演会講演予稿集},
  year = 2004,
}

@article{CTT100388865,
  author = {SHUU'ICHIROU YAMAMOTO and TORU ISHIKAWA and TAKAAKI FUCHIKAMI and HYUN-SOO KIM and KOUJI AIZAWA and BYUNG-EUN PARK and TAISUKE FURUKAWA and HIROSHI OHKI and SHIN KIKUCHI and HIROMASA HOKO and HIROSHI ISHIWARA},
  title = {Fabrication of 1K-Bit 1T2C-Type Ferroelectric Memory Cell Array},
  journal = {Integrated Ferroelectrics},
  year = 2004,
}

@article{CTT100388866,
  author = {HYUN-SOO KIM and SHUU'ICHIROU YAMAMOTO and HIROSHI ISHIWARA},
  title = {Improvement of Data Readout Disturbance Effect in 1T2C-Type Ferroelectric Memory Array},
  journal = {Integrated Ferroelectrics},
  year = 2004,
}

@article{CTT100492223,
  author = {山本修一郎},
  title = {1Ｔ2Ｃ型強誘電体メモリアレイの読み出し回路の設計と評価},
  journal = {第64回応用物理学会学術講演会講演予稿集},
  year = 2003,
}

@article{CTT100492613,
  author = {Shuu'ichirou Yamamoto},
  title = {Fabrication of 1T2C-Type Ferroelectric Memory Array with Sense Amplifiers},
  journal = {Journal of Conference Abstracts},
  year = 2003,
}

@article{CTT100492612,
  author = {石川徹 and 山本修一郎 and 石原宏},
  title = {SPICEによる1T2C型強誘電体メモリアレイの動作解析},
  journal = {第50回応用物理学関係連合講演会講演予稿集},
  year = 2003,
}

@article{CTT100492611,
  author = {タンブンイー and 斉藤亮平 and 山本修一郎 and 石原宏},
  title = {強誘電体を用いた不揮発性ＣＭＯＳラッチ回路の特性評価},
  journal = {第64回応用物理学会学術講演会講演予稿集},
  year = 2003,
}

@article{CTT100492610,
  author = {金泫季 and 山本修一郎 and 石原宏},
  title = {1Ｔ2Ｃ型強誘電体メモリセルに対する読み出しディスターブの低減法},
  journal = {第64回応用物理学会学術講演会講演予稿集},
  year = 2003,
}

@article{CTT100491702,
  author = {Toru Ishikawa and Shuu’ichirou Yamamoto and Takaaki Fuchikami and Taisuke Furukawa and Kouji Aizawa and Byung-Eun Park and Shin Kikuchi and Hiroshi Ohki and Hiromasa Hoko and Hiroshi},
  title = {Fabrication of 1T2C-Type Ferroelectric Memory Cell Array},
  journal = {Book of Abstracts (15th International Conference on Integrated Ferroelectrics)},
  year = 2003,
}

@article{CTT100491701,
  author = {Xusheng Wang and Shuu’ichirou Yamamoto and Hiroshi Ishiwara},
  title = {Low Temperature Synthesis of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films with Bi<sub>2</sub>SiO<sub>5</sub>-Containing Seed Layers},
  journal = {Japanese Journal of Applied Physics },
  year = 2003,
}

@article{CTT100491700,
  author = {Shuu'ichirou Yamamoto and Hyun-Soo Kim and Hiroshi Ishiwara},
  title = {Proposal of a Planar 8F<sup>2</sup> 1T2C-Type Ferroelectric Memory Cell},
  journal = {Japanese Journal of Applied Physics},
  year = 2003,
}

@article{CTT100491697,
  author = {Hyun-soo Kim and Shuu’ichirou Yamamoto and Hiroshi Ishiwara},
  title = {Operation Simulation of an 8F<sup>2</sup> 1T2C-Type Ferroelectric Memory Array with a Revised Data Writing Method},
  journal = {Book of Abstracts (15th International Conference on Integrated Ferroelectrics)},
  year = 2003,
}

@article{CTT100491696,
  author = {金&#27883;季 and 山本修一郎 and 石原宏},
  title = {1T2C型強誘電体メモリにおけるデータディスターブの解析と低減法の提案},
  journal = {電子情報通信学会技術報告},
  year = 2003,
}

@article{CTT100491695,
  author = {金&#27883;季 and 山本修一郎 and 石原宏},
  title = {1T2C型強誘電体メモリアレイに対するデータ書き込みディスターブの低減法},
  journal = {第50回応用物理学関係連合講演会講演予稿集},
  year = 2003,
}

@article{CTT100491694,
  author = {山本修一郎},
  title = {強誘電体を用いた不揮発性CMOSラッチ回路の消費電力の評価},
  journal = {第50回応用物理学関係連合講演会講演予稿集},
  year = 2003,
}

@article{CTT100383129,
  author = {Shuu'ichirou Yamamoto},
  title = {Operation Simulation of an 8F<sup>2</sup> 1T2C-Type Ferroelectric Memory Array with a Revised Data Writing Method},
  journal = {Integrated Ferroelectrics},
  year = 2003,
}

@article{CTT100473993,
  author = {Hiroshi Ishiwara and Shuu'ichirou Yamamoto},
  title = {A Novel Data Writing Method in a 1T2C-Type Ferroelectric Memory},
  journal = {Proceedings of the 23rd International Conference on Microelectronics},
  year = 2002,
}

@article{CTT100473990,
  author = {Shuu'ichirou Yamamoto and Susumu Inoue and Hiroshi Ishiwara},
  title = {Analysis of non-volatile latch circuits with ferroelectric-gate field effect transistors for low power and low voltage operation},
  journal = {Proceedings of the 23rd International Conference on Microelectronics},
  year = 2002,
}

@article{CTT100473985,
  author = {Hiroshi Ishiwara and Shuu'ichirou Yamamoto},
  title = {A novel data writing method in a 1T2C-type ferroelectric memory},
  journal = {Facta Universitatis (Nis) - Elec. Energ.},
  year = 2002,
}

@article{CTT100473982,
  author = {山本修一郎 and 石原宏},
  title = {FETのゲート容量を考慮した1T2C型強誘電体メモリの新規書込み法の提案と動作解析},
  journal = {第49回応用物理学関係連合講演会講演予稿集},
  year = 2002,
}

@article{CTT100473975,
  author = {山本修一郎 and 井上進 and 石原宏},
  title = {不揮発性強誘電体ラッチ回路の新構成法と低電圧動作解析},
  journal = {電子情報通信学会技術報告},
  year = 2002,
}

@article{CTT100474004,
  author = {金■玄秀 and 山本修一郎 and 石原宏},
  title = {1T2C型強誘電体の高集積化とSPICEによる動作解析},
  journal = {第63回応用物理学会学術講演会講演予稿集},
  year = 2002,
}

@article{CTT100473997,
  author = {Shuu'ichirou Yamamoto and Hyun-Soo Kim and Hiroshi Ishiwara},
  title = {Proposal of a planar 8F<sup>2</sup> 1T2C-type ferroelectric memory cell},
  journal = {Extended Abstract of the 2002 International Conference on Solid State Devices and Materials},
  year = 2002,
}

@article{CTT100474003,
  author = {山本修一郎 and 金■玄秀 and 石原宏},
  title = {1T2C型強誘電体メモリアレイにおける書込み・読出しデータディスターブ低減法},
  journal = {第63回応用物理学会学術講演会講演予稿集},
  year = 2002,
}

@article{CTT100457410,
  author = {Shuu'ichirou Yamamoto and Takumi Kato and Hiroshi Ishiwara},
  title = {Novel Simulation Program with Integrated Circuit Emphasis (SPICE) Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit},
  journal = {Japanese Journal of Applied Physics},
  year = 2001,
}

@article{CTT100457409,
  author = {井上進 and 山本修一郎 and 石原宏},
  title = {強誘電体ゲートFETを用いた不揮発性ラッチ回路の動作解析},
  journal = {第48回応用物理学関係連合講演会講演予稿集},
  year = 2001,
}

@article{CTT100457408,
  author = {山本修一郎 and 平山智久 and 石原宏},
  title = {強誘電体キャパシタシミュレーション支援LSIの設計},
  journal = {電子情報通信学会2001年総合大会講演講演論文集・エレクトロニクス２},
  year = 2001,
}

@article{CTT100457407,
  author = {山本修一郎 and 石原宏},
  title = {強誘電体を用いた不揮発性CMOSラッチ回路の新構成法と低電圧動作解析},
  journal = {第62回応用物理学会学術講演会講演予稿集},
  year = 2001,
}

@article{CTT100457406,
  author = {平山智久 and 山本修一郎 and 石原宏},
  title = {1T2C型強誘電体メモリの周辺回路の設計},
  journal = {電子情報通信学会2001年エレクトロニクスソサイエティ大会講演論文集２},
  year = 2001,
}

@article{CTT100386586,
  author = {Shuu'ichirou Yamamoto and Shunri Oda},
  title = {Atomic Layer-by-Layer MOCVD of Complex Metal Oxides and In Situ Process Monitoring},
  journal = {Chemical Vapor Deposition},
  year = 2001,
}

@article{CTT100440416,
  author = {山本修一郎 and 石原宏},
  title = {シュミットトリガ回路を用いた回路要素並列型強誘電体SPICEモデルの構築},
  journal = {第60回応用物理学会学術講演会講演予稿集},
  year = 2000,
}

@article{CTT100440415,
  author = {Shuu'ichirou Yamamoto and Takumi Kato and Hiroshi Ishiwara},
  title = {A Novel SPICE Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit},
  journal = {Extended Abstract of the 2000 International Conference on Solid State Devices and Materials},
  year = 2000,
}

@article{CTT100440414,
  author = {加藤匠 and 高原淳 and 山本修一郎 and 小笠原悟 and 徳光永輔 and 石原宏},
  title = {HSPICEによるトランジスタ型強誘電体メモリの動作解析},
  journal = {第47回応用物理学関係連合講演会予稿集},
  year = 2000,
}

@article{CTT100425730,
  author = {Shuu'ichirou Yamamoto and Kouji Nagata and Satoshi Sugai and Akio Sengoku and Yasunari Matsukawa and Takeo Hattori and Shunri Oda},
  title = {Reproducible Growth of Metalorganic Chemical Vapor Deposition Derived YBa<sub>2</sub>Cu<sub>3</sub>O<sub>X</sub> Thin Films Using Ultrasonic Gas Concentration Analyzer},
  journal = {Japanese Journal of Applied Physics},
  year = 1999,
}

@article{CTT100440413,
  author = {加藤匠 and 山本修一郎 and 石原宏},
  title = {強誘電体の過渡応答SPICEモデル(II)},
  journal = {第47回応用物理学関係連合講演会講演予稿集},
  year = 1999,
}

@article{CTT100425729,
  author = {Shuu'ichirou Yamamoto and Satoshi Sugai and Yasunari Matsukawa and Akio Sengoku and Hiroshi Tobisaka and Takeo Hattori and Shunri Oda},
  title = {In situ Growth Monitoring during Metalorganic Chemical Vapor Deposition of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>X</sub> Thin Films by Spectroscopic Ellipsometry},
  journal = {Japanese Journal of Applied Physics},
  year = 1999,
}

@article{CTT100425735,
  author = {Shuu'ichirou Yamamoto and Shunri Oda},
  title = {atomic controlled interface of superconductors},
  journal = {Extended Abstracts of Special Session for Superconducting Devices},
  year = 1998,
}

@article{CTT100425727,
  author = {Shuu'ichirou Yamamoto and Tomotaka Watanabe and Shunri Oda},
  title = {Junction Formation in YBaCuO Thin Films by Scanning Probe},
  journal = {Journal of Low Temperature Physics},
  year = 1997,
}

@article{CTT100425728,
  author = {Shuu'ichirou Yamamoto and Atsushi Kawaguchi and Shunri Oda},
  title = {Anomalous Current-Voltage Characteristics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography},
  journal = {Phisica C},
  year = 1997,
}

@article{CTT100425726,
  author = {Shuu'ichirou Yamamoto and Atsushi Kawaguchi and Kouji Nagata and Takeo Hattori and Shunri Oda},
  title = {Atomic layer-by-layer epitaxy of oxide superconductors by MOCVD},
  journal = {Applied Surface Science},
  year = 1997,
}

@article{CTT100425725,
  author = {Shuu'ichirou Yamamoto and Atsushi Kawaguchi and Shunri Oda},
  title = {Preparation of Thin Films of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>X</sub> with a Smooth Surface by Atomic Layer MOCVD},
  journal = {Material Science of Engineering B},
  year = 1996,
}

@article{CTT100425723,
  author = {Shunri Oda and Hideaki Zama and Shuu'ichirou Yamamoto},
  title = {Superconductivity and Surface Morphology of YBCO Thin Films Prepared by Metalorganic Chemical Vapor Deposition},
  journal = {IEEE Transaction of Applied Superconductor},
  year = 1995,
}

@article{CTT100425733,
  author = {Shuu'ichirou Yamamoto and Hideaki Suzuki and Tomotaka Watanabe and Atsushi Kawaguchi and Takeo Hattori and Shunri Oda},
  title = {STM/AFM Fabricated Junctions of YBaCuO Films},
  journal = {Extended Abstracts of 5th International Superconductive Electronics Conference},
  year = 1995,
}

@article{CTT100425724,
  author = {Shunri Oda and Shuu'ichirou Yamamoto and Atsushi Kawaguchi},
  title = {Atomic Layer-by-Layer MOCVD of Oxide Superconductors},
  journal = {Journal de Physique IV},
  year = 1995,
}

@article{CTT100425722,
  author = {Shunri Oda and Hideaki Zama and Shuu'ichirou Yamamoto},
  title = {Atomic layer controlled metalorganic chemical vapor deposition of superconducting YBa<sub>2</sub>Cu<sub>3</sub>O<sub>X</sub> films},
  journal = {Journal of Crystal Growth},
  year = 1994,
}

@article{CTT100425734,
  author = {Shunri Oda and Hideaki Zama and Shuu'ichirou Yamamoto},
  title = {Atomic Layer Metalorganic Chemical Vapor Deposition of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>X</sub> with In Situ Optical Reflectance Measurement},
  journal = {Proceedings of the 7th Topical Meeting on Crystal Growth Mechanism},
  year = 1994,
}

@inproceedings{CTT100886914,
  author = {山崎修 and 塩津勇作 and 菅原聡 and 山本修一郎},
  title = {FinFETを用いた低電圧駆動不揮発性SRAM (NV-SRAM)の設計},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100886913,
  author = {加藤豪人 and 塩津勇作 and 菅原聡 and 山本修一郎},
  title = {ニアスレッショルド電圧駆動ULVR-SRAMのパワーゲーティング性能},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100886912,
  author = {伊藤克俊 and 塩津勇作 and 山本修一郎 and 菅原聡},
  title = {新型超低電圧リテンションSRAM (ULVR-SRAM)セルの提案},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100873415,
  author = {矢野広気 and 塩津勇作 and 山本修一郎 and 菅原聡},
  title = {超低電圧リテンションSRAMのパワーゲーティング性能とアーキテクチャ},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100873417,
  author = {塩津勇作 and 山本修一郎 and 菅原聡},
  title = {不揮発性SRAM：エッジコンピューティングの革新的低消費電力技術},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100873404,
  author = {塩津勇作 and 山本修一郎 and 菅原聡},
  title = {ULVR-SRAMを用いたBNNアクセラレータの提案と性能予測},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100873406,
  author = {斎藤修平 and 塩津勇作 and 原拓実 and 山本修一郎 and 菅原聡},
  title = {ボディバイアス制御ULVR-SRAMの設計と解析},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100873414,
  author = {原拓実 and 塩津勇作 and 山本修一郎 and 菅原聡},
  title = {ニアスレッショルド電圧動作ULVR-SRAMマクロの設計と解析},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100873407,
  author = {松﨑翼 and 塩津勇作 and 山本修一郎 and 菅原聡},
  title = {バルクデバイスを用いた超低電圧リテンションFlip-Flopの設計と解析},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100873401,
  author = {原拓実 and 塩津勇作 and 山本修一郎 and 菅原聡},
  title = {ニアスレッショルド電圧動作超低電圧リテンションSRAMの設計と性能解析},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100873402,
  author = {塩津勇作 and 吉田隼 and 山本修一郎 and 菅原聡},
  title = {ボディバイアス効果を用いたULVR-SRAMセルの設計とそのパワーゲーティング性能},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100846260,
  author = {原拓実 and 吉田隼 and 塩津勇作 and 山本修一郎 and 菅原聡},
  title = {ニアスレッショルド電圧動作ULVR-SRAMセルの設計},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100846267,
  author = {瀧口憲一郎 and 塩津勇作 and 松﨑翼 and 山本修一郎 and 菅原聡},
  title = {超低電圧リテンションフリップフロップ（ULVR-FF）のエネルギー極小点動作},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100846265,
  author = {吉田隼 and 塩津勇作 and 山本修一郎 and 菅原聡},
  title = {ULVR-SRAMを用いたキャッシュのパワーゲーティング性能},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100846263,
  author = {塩津勇作 and 山本修一郎 and 菅原聡},
  title = {超低電圧リテンションSRAM (ULVR-SRAM)のエネルギー極小点動作},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100846274,
  author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {各種リテンションSRAMのパワーゲーティングにおける電力削減効率に関する電源遮断可能時間分布の影響},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100846277,
  author = {北形大樹 and 吉田隼 and 塩津勇作 and 山本修一郎 and 菅原聡},
  title = {新型超低電圧リテンションSRAMセルの設計と解析},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100846276,
  author = {瀧口憲一郎 and 北形大樹 and 松﨑翼 and 山本修一郎 and 菅原聡},
  title = {新型超低電圧リテンションFFの提案},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100846275,
  author = {塩津勇作 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {新型超低電圧リテンションSRAMマクロの設計と解析},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100840218,
  author = {原拓実 and 吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {ニアスレッショルド電圧動作擬似不揮発SRAMセルの設計と解析},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100840216,
  author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {新型擬似不揮発性SRAMセルの提案},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100814136,
  author = {D. Kitagata and S. Yamamoto and S. Sugahara},
  title = {A New Store Energy and Latency Reduction Architecture for Nonvolatile SRAM Using STT-MTJs: Proactive Useless Data Flush Architecture},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814145,
  author = {塩津勇作 and 山本修一郎 and 舟窪浩 and 黒澤実 and 菅原聡},
  title = {新構造ピエゾエレクトロニックトランジスタを用いたFFの設計と性能},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100840214,
  author = {瀧口憲一郎 and 北形大樹 and 松﨑翼 and 山本修一郎 and 菅原聡},
  title = {不揮発/擬似不揮発性FFを用いたパワーゲーティングの性能評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814142,
  author = {原拓実 and 吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {各種リテンション技術を用いたSRAMのパワーゲーティング性能},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814144,
  author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {不揮発/擬似不揮発記憶を用いたSRAMのパワーゲーティング性能},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814146,
  author = {北形大樹 and 山本修一郎 and 菅原聡},
  title = {NV-SRAMを用いたUseless dataの積極的破棄による不揮発性パワーゲーティング},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814137,
  author = {Yusaku Shiotsu and Shuichiro Yamamoto and HIROSHI FUNAKUBO and Minoru Kuribayashi Kurosawa and SATOSHI SUGAHARA},
  title = {Design of New Piezoelectronic Transistors and Their Ultralow-Voltage SRAM Application},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814243,
  author = {北形大樹 and 松﨑翼 and 山本修一郎 and 菅原聡},
  title = {擬似不揮発性FFの速度性能優先設計とその回路性能},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814150,
  author = {北形大樹 and 松﨑翼 and 山本修一郎 and 菅原聡},
  title = {擬似不揮発性FFの速度性能優先設計とその回路性能},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814242,
  author = {塩津勇作 and 山本修一郎 and 舟窪浩 and 黒澤実 and 菅原聡},
  title = {新構造ピエゾエレクトロニックトランジスタの低リーク設計とそのSRAMへの応用},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814147,
  author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {デュアルパワースイッチを用いた擬似不揮発性SRAMの設計と解析},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100784484,
  author = {D. Kitagata and S. Yamamoto and S. Sugahara},
  title = {Design and Performance of Virtually Nonvolatile Retention Flip-Flop Using Dual-Mode Inverters},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784485,
  author = {Kitagata and H. Yoshida and S. Yamamoto and S. Sugahara},
  title = {Virtually Nonvolatile Retention SRAM cell Using Dual-Mode Inverters},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784486,
  author = {D. Kitagata and S. Yamamoto and S. Sugahara},
  title = {A New Architecture of Store Energy and Latency Reduction for Nonvolatile SRAM Based on Spintronics/CMOS-Hybrid Technology},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784489,
  author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {デュアルモードインバータを用いた疑似不揮発性SRAMの設計と解析},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784490,
  author = {北形大樹 and 山本修一郎 and 菅原聡},
  title = {デュアルモードインバータを用いた疑似不揮発性FFの設計と解析},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100771714,
  author = {塩津勇作 and 山本修一郎 and 舟窪浩 and 黒澤実 and 菅原聡},
  title = {新構造ピエゾエレクトロニックトランジスタの設計方法},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784487,
  author = {D. Kitagata and S. Yamamoto and S. Sugahara},
  title = {Virtually Nonovolatile Retention Flip-Flop Using FinFET Technology},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100768963,
  author = {Y. Shiotsu and S. Yamamoto and Y. Shuto and H. Funakubo and M. K. Kurosawa and S. Sugahara},
  title = {Design and circuit performance of a new piezoelectronic transistor},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784493,
  author = {北形大樹 and 山本修一郎 and 菅原聡},
  title = {階層型ストアフリー電源遮断を用いた不揮発性SRAMのエネルギー性能},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100768982,
  author = {塩津勇作 and 山本修一郎 and 周藤悠介 and 舟窪浩 and 黒澤実 and 菅原聡},
  title = {新構造ピエゾエレクトロニックトランジスタの設計とそのデバイス・回路性能},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100760746,
  author = {Y. Takamura and S. Yamamoto and H. Funakubo and M.K. Kurosawa and S. Nakagawa and S. Sugahara},
  title = {Piezoelectronic magnetoresistive-device and its low-voltage MRAM application},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784470,
  author = {D. Kitagata and S. Yamamoto and S. Sugahara},
  title = {Hierarchical Store-Free Architecture for Nonvolatile SRAM Using STT-MTJs},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100784477,
  author = {Sugahara and Y. Shuto and S. Yamamoto and H. Funakubo and M. K. Kurosawa},
  title = {Piezoelectronic Transistor for Low-Voltage High-Speed Integrated Electronics},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100742637,
  author = {北形大樹 and 周藤悠介 and 山本修一郎 and 菅原聡},
  title = {不揮発性SRAMのアーキテクチャとエネルギー性能},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2017,
}

@inproceedings{CTT100784481,
  author = {北形大樹 and 山本修一郎 and 菅原聡},
  title = {強磁性トンネル接合を用いた不揮発性SRAMの待機時電力削減能力},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100742359,
  author = {北形大樹 and 周藤悠介 and 山本修一郎 and 菅原聡},
  title = {不揮発性SRAMの設計とエネルギー性能の解析},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100742353,
  author = {D. Kitagata and Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Analysis of Break-Even Time for Nonvolatile SRAM with SOTB Technology},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100742351,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Energy Performance of Nonvolatile Power-Gating SRAM Using SOTB Technology},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100742350,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Design and Implementation of Nonvolatile Power-Gating SRAM Using SOTB Technology},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100742347,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Nonvolatile Power-gating Architecture for SRAM using SOTB Technology},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100742346,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {New power-gating architectures using nonvolatile retention: Comparative study of nonvolatile power-gating (NVPG) and normally-off architectures for SRAM},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100754181,
  author = {Y. Takamura and Y. Shuto and S. Yamamoto and H. Funakubo and M.K. Kurosawa and S. Nakagawa and S. Sugahara},
  title = {Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAMs},
  booktitle = {2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)},
  year = 2016,
}

@inproceedings{CTT100695031,
  author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
  title = {Comparative study of power-gating architectures for nonvolatile FinFET-SRAM using spintronics-based retention technology},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100804772,
  author = {Shuto, Y. and Shuichiro Yamamoto and Sugahara, S.},
  title = {Quantitative comparison of power-gating architectures for FinFET-based nonvolatile SRAM using spintronics retention technology},
  booktitle = {2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings},
  year = 2015,
}

@inproceedings{CTT100695032,
  author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
  title = {Comparative Study of Power-Gating Architectures for Nonvolatile SRAM Cells Based on Spintronics Technology},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100695033,
  author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
  title = {Near-threshold voltage operation of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100695034,
  author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
  title = {0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100695035,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Design and performance of nonvolatile SRAM cells based on pseudo-spin-FinFET architecture},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100804400,
  author = {Shuto, Y. and Shuichiro Yamamoto and Sugahara, S.},
  title = {FinFET-based pseudo-spin-transistor: Design and performance},
  booktitle = {2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013},
  year = 2013,
}

@inproceedings{CTT100804715,
  author = {Nakane, R. and Shuto, Y. and Sukegawa, H. and Wen, Z.C. and Shuichiro Yamamoto and Mitani, S. and Tanaka, M. and Inomata, K. and Sugahara, S.},
  title = {Monolithic integration of pseudo-spin-MOSFETs using a custom CMOS chip fabricated through multi-project wafer service},
  booktitle = {European Solid-State Device Research Conference},
  year = 2013,
}

@inproceedings{CTT100640866,
  author = {S. Sugahara and Y. Shuto and S. Yamamoto},
  title = {Energy-efficient nonvolatile logic systems based on CMOS/spintronics hybrid technology},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640868,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {スピントロニクス/CMOS融合技術:スピントランジスタ・アーキテクチャ},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640962,
  author = {山本修一郎 and 周藤悠介 and 菅原聡},
  title = {擬似スピンMOSFET技術を用いたFPGAの不揮発性パワーゲーティング},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640959,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM:スリープモード動作とその応用},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640960,
  author = {山本修一郎 and 周藤悠介 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性DFF：BETにおける静的リーク電流の影響},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640963,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAMのスタティックノイズマージンとエネルギー性能の解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640869,
  author = {菅原 聡 and 周藤 悠介 and 山本 修一郎},
  title = {スピントロニクス/CMOS融合技術: スピン機能MOSFETとその低消費電力ロジック応用},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640901,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Analysis of static noise margin and power-gating efficiency of a new nonvolatile SRAM cell using pseudo-spin-MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640902,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Static noise margin and power-gating efficiency of a new nonvolatile SRAM cell based on pseudo-spin-transistor architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640965,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM:スタティックノイズマージン評価},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100804549,
  author = {Shuichiro Yamamoto and Shuto, Y. and Sugahara, S.},
  title = {Nonvolatile power-gating FPGA based on pseudo-spin-transistor architecture with spin-transfer-torque MTJs},
  booktitle = {Materials Research Society Symposium Proceedings},
  year = 2012,
}

@inproceedings{CTT100804296,
  author = {Shuichiro Yamamoto and Shuto, Y. and Sugahara, S.},
  title = {Nonvolatile flip-flop using pseudo-spin-transistor architecture and its power-gating applications},
  booktitle = {IEEE 2012 International Semiconductor Conference Dresden-Grenoble, ISCDG 2012},
  year = 2012,
}

@inproceedings{CTT100804768,
  author = {Shuto, Y. and Shuichiro Yamamoto and Sukegawa, H. and Wen, Z.C. and Nakane, R. and Mitani, S. and Tanaka, M. and Inomata, K. and Sugahara, S.},
  title = {Design and performance of pseudo-spin-MOSFETs using nano-CMOS devices},
  booktitle = {Technical Digest - International Electron Devices Meeting, IEDM},
  year = 2012,
}

@inproceedings{CTT100640906,
  author = {S. Yamamoto and Y. Shuto and S. Sugahara},
  title = {Nonvolatile power-gating FPGAs based on spin-transistor architecture},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640905,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Nonvolatile SRAM based on spin-transistor architecture for nonvolatile power-gating systems},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640874,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100629976,
  author = {山本修一郎 and 菅原聡},
  title = {抵抗変化素子を用いたばらつき補償CMOSゲート},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640969,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM：スリープ時リーク電流削減効果},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640915,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Evaluation and control of break-even time for nonvolatile SRAM using pseudo-spin-MOSFETs wit spin-transfer-torque MTJs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640917,
  author = {S. Yamamoto and Y. Shuto and S. Sugahara},
  title = {Power-gating ability and power aware design of nonvolatile delay flip-flop using spin-transistor architecture with spin transfer torque MTJs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640916,
  author = {S. Yamamoto and Y. Shuto and S. Sugahara},
  title = {Application of NV-DFF and NV-SRAM using spin-transistor Architecture with spin transfer torque MTJs to nonvolatile power-gating FPGA},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100629970,
  author = {山本修一郎 and 周藤悠介 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAMと不揮発性DFFのFPGA応用},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629843,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {不揮発性メモリ素子を用いた不揮発性/ばらつき補償SRAM技術},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629967,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM：ストア時の書き込み電流制御},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629969,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM：セルリーク電流とBETの削減},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629971,
  author = {山本修一郎 and 周藤悠介 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性DFF：静的リーク電流とBETの削減},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629904,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Operating analysis of nonvolatile SRAM using pseudo-spin-MOSFETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629985,
  author = {Y. Shuto and R. Nakane and W. H. Wang and H. Sukegawa and S. Yamamoto and M. Tanaka and K. Inomata and S. Sugahara},
  title = {A new spin-functional MOSFET based on MTJ technology: Pseudo-spin-MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629980,
  author = {山本修一郎 and 菅原聡},
  title = {抵抗変化素子を用いたばらつき補償CMOSゲート},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629972,
  author = {周藤悠介 and 中根了昌 and Wenhong Wang and 介川裕章 and 山本修一郎 and 田中雅明 and 猪俣浩一郎 and 菅原 聡},
  title = {擬似スピンMOSFETの作製と評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100805667,
  author = {鈴木 邦彦 and 山本修一郎 and 前島 英雄},
  title = {マルチコア向け統合開発環境におけるデバッグ効率向上のための視覚化機能の開発},
  booktitle = {全国大会講演論文集},
  year = 2010,
}

@inproceedings{CTT100629963,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Operating analysis of nonvolatile SRAM using pseudo-spin-MOSFETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629960,
  author = {S Yamamoto and Satoshi Sugahara},
  title = {Nonvolatile delay flip-flop using pseudo-spin-MOSFETs and its power-gating applications},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100605436,
  author = {Y. Shuto and R. Nakane and H. Sukegawa and S. Yamamoto and M. Tanaka and K. Inomata and S. Sugahara},
  title = {Fabrication and characterization of pseudo-spin-MOSFETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605406,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Analysis and design of nonvolatile SRAM using spintronics technology},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605410,
  author = {S. Yamamoto and Yusuke Shuto and Satoshi Sugahara},
  title = {Nonvolatile power-gating microprocessor concepts using nonvolatile SRAM and flip-flop},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605420,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM：電源遮断動作消費電力の評価},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605421,
  author = {山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性DFF：バルーンDFFとの比較},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605358,
  author = {山本修一郎 and 菅原聡 and 前島英雄},
  title = {マイクロプロセッサにおけるエマージングメモリデバイスへの期待},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605352,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {Spin-RAM/ReRAM技術を用いた機能MOSFETとその不揮発性SRAM/フリップフロップへの応用},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605412,
  author = {Shuu’ichirou.Yamamoto and Yusuke Shuto and Satoshi Sugahara},
  title = {Nonvolatile SRAM(NV-SRAM) Using Functional MOSFET Merged with Resistive Switching Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605414,
  author = {Shuu’ichirou Yamamoto and Satoshi Sugahara},
  title = {Nonvolatile delay flip-flop using magnetic tunnel junctions with current-induced magnetization switching architecture},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605418,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Analysis and Design of Nonvolatile SRAM Using MOSFET-Based Spin-Transistors},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100575383,
  author = {山本修一郎 and 菅原聡},
  title = {スピン注入磁化反転MTJを用いた不揮発性Dフリップフロップ},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100583575,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {抵抗変化素子を用いたFunctional MOSFET/CMOS},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583576,
  author = {山本修一郎 and 菅原聡},
  title = {ノンポーラ型抵抗変化素子のSPICEモデル},
  booktitle = {第56回応用物理学関連連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100583568,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {Pseudo-spin-MOSFETを用いた不揮発性SRAM：情報ストア動作解析},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583572,
  author = {山本修一郎 and 周藤悠介 and 菅原聡},
  title = {ノンポーラ型抵抗変化素子を用いた不揮発性SRAM},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583578,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAMの提案と解析},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605405,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Variability-Tolerant CMOS Gates Using Functional MOSFETs with Resistive Switching Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583556,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Novel nonvolatile SRAM architecture using MOSFET-based spin-transistors},
  booktitle = {53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008)},
  year = 2008,
}

@inproceedings{CTT100583558,
  author = {S. Yamamoto and S. Sugahara},
  title = {Analysis and design of nonvolatile SRAM using magnetic tunnel junctions with current-induced magnetization switching technology},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100575381,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {スピン機能MOSFETを用いた不揮発性高機能・高性能ロジック},
  booktitle = {応用電子物性分科会誌},
  year = 2008,
}

@inproceedings{CTT100583515,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {スピン機能MOSFETによるスピントランジスタ・エレクトロニクス},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100575380,
  author = {三宅康夫 and 山本修一郎 and 前島英雄},
  title = {マスタ・スレーブ型マルチプロセッサにおける動的可変優先度バス制御方式とその評価},
  booktitle = {2008年電子情報通信学会エレクトロニクスソサイエティ大会予稿集},
  year = 2008,
}

@inproceedings{CTT100583517,
  author = {菅原 聡 and 高村 陽太 and 中根 了昌 and 周藤悠介 and 山本 修一郎},
  title = {スピンMOSFET を用いたスピントランジスタ・エレクトロニクス},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100589214,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {Pseudo-spin-MOSFETを用いた不揮発性SRAM：消費電力削減の効果},
  booktitle = {第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100575379,
  author = {山本修一郎 and 菅原聡},
  title = {スピン注入磁化反転MTJを用いた不揮発性SRAM：通常動作時消費電力の削減},
  booktitle = {第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100553217,
  author = {菅原聡 and 山本修一郎},
  title = {スピン注入磁化反転MTJを用いたpseudo-spin-MOSFETの動作解析},
  booktitle = {第55回応用物理学関係連合講演会},
  year = 2008,
}

@inproceedings{CTT100583597,
  author = {山本修一郎 and 菅原聡},
  title = {スピン注入磁化反転MTJを用いた不揮発性SRAM：Vhalfの影響},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100583595,
  author = {山本修一郎 and 菅原聡},
  title = {スピン注入磁化反転MTJを用いた不揮発性SRAM：仮想接地セルアーキテクチャ},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100553202,
  author = {S. Yamamoto and S. Sugahara},
  title = {Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology},
  booktitle = {52nd Annual Conf. on Magnetism and Magnetic Materials},
  year = 2007,
}

@inproceedings{CTT100553212,
  author = {山本修一郎 and 菅原聡},
  title = {スピン注入磁化反転MTJを用いた不揮発性SRAM/ラッチ回路},
  booktitle = {第68回応用物理学会学術講演会},
  year = 2007,
}

@inproceedings{CTT100553210,
  author = {山本修一郎 and 菅原聡},
  title = {pseudo spin-MOSFET/spin-MOSFETの不揮発性SRAM/ラッチ回路への応用},
  booktitle = {第68回応用物理学会学術講演会講演予稿集},
  year = 2007,
}

@inproceedings{CTT100553208,
  author = {山本修一郎 and 菅原聡},
  title = {強磁性トンネル接合を用いたpseudo spin-MOSFETの提案と理論解析},
  booktitle = {第68回応用物理学会学術講演会講演予稿集},
  year = 2007,
}

@inproceedings{CTT100398903,
  author = {加藤潤三 and 佐伯元司 and 大西淳 and 古宮誠一 and 山本修一郎 and 海谷治彦},
  title = {シソーラスを用いた要求分析法},
  booktitle = {電子情報通信学会技術研究報告ソフトウェアサイエンス研究会},
  year = 2005,
}

@inproceedings{CTT100383128,
  author = {金泫秀 and 山本修一郎 and 石川徹 and 大木博 and 石原宏},
  title = {1T2C型強誘電体メモリアレイの作製と評価},
  booktitle = {第65回応用物理学会学術講演会講演予稿集},
  year = 2004,
}

@inproceedings{CTT100502568,
  author = {Juzo Kato and Motoshi Saeki and Atsushi Ohnishi and Morio Nagata and Haruhiko Kaiya and Seiichi Komiya and Shuichiro Yamamoto and Hisayuki Horai and Kenji Watahiki},
  title = {PAORE: Package Oriented Requirements Elicitation},
  booktitle = {Proc. of 10th Asia-Pacific Software Engineering Conference (APSEC2003)},
  year = 2003,
}

@inproceedings{CTT100485409,
  author = {加藤潤三 and 佐伯元司 and 大西淳 and 永田守男 and 海谷治彦 and 古宮誠一 and 山本修一郎 and 綿引健二 and 蓬莱尚幸},
  title = {要求分析のためのシソーラス作成支援},
  booktitle = {電子情報通信学会技術研究報告知能ソフトウェア工学KBSE2003-5～12},
  year = 2003,
}

@inproceedings{CTT100485408,
  author = {加藤潤三 and 佐伯元司 and 大西淳 and 永田守男 and 海谷治彦 and 古宮誠一 and 山本修一郎 and 綿引健二 and 蓬莱尚幸},
  title = {PAORE : パッケージ指向の要求獲得プロセス},
  booktitle = {電子情報通信学会技術研究報告知能ソフトウェア工学KBSE2002-13～20},
  year = 2002,
}

@misc{CTT100805967,
  author = {周藤 悠介 and 山本修一郎 and 介川 裕章 and Wen ZhenChao and 中根 了昌 and 三谷 誠司 and 田中 雅明 and 猪俣 浩一郎 and 菅原 聡},
  title = {ナノCMOSデバイスを用いた擬似スピンMOSFETの設計と性能 (シリコン材料・デバイス・IEDM特集(先端CMOSデバイス・プロセス技術))},
  year = 2013,
}

@misc{CTT100805508,
  author = {林 明日香 and 山本修一郎 and 前島 英雄},
  title = {マルチメディア処理に向けたリコンフィギュラブルプロセッサの実現と評価},
  year = 2012,
}

@misc{CTT100805161,
  author = {林 明日香 and 山本修一郎 and 前島 英雄},
  title = {マルチメディア処理に向けたリコンフィギュラブルプロセッサの実現と評価},
  year = 2012,
}

@misc{CTT100805883,
  author = {林 明日香 and 山本修一郎 and 前島 英雄},
  title = {マルチメディア処理に向けたリコンフィギュラブルプロセッサの実現と評価},
  year = 2012,
}

@misc{CTT100805916,
  author = {林 明日香 and 山本修一郎 and 前島 英雄},
  title = {マルチメディア処理に向けたリコンフィギュラブルプロセッサの実現と評価 (VLSI設計技術)},
  year = 2012,
}

@misc{CTT100805930,
  author = {林 明日香 and 山本修一郎 and 前島 英雄},
  title = {マルチメディア処理に向けたリコンフィギュラブルプロセッサの実現と評価 (コンピュータシステム)},
  year = 2012,
}

@misc{CTT100805939,
  author = {林 明日香 and 山本修一郎 and 前島 英雄},
  title = {マルチメディア処理に向けたリコンフィギュラブルプロセッサの実現と評価 (リコンフィギャラブルシステム)},
  year = 2012,
}

@misc{CTT100640998,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望},
  year = 2011,
}

@misc{CTT100605322,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {スピン機能MOSFETによる不揮発性ロック 不揮発性パワーゲーティング・ロジックへの応用 不揮発性SRAM/フリップフロップの可能性を検証},
  year = 2009,
}

@misc{CTT100605323,
  author = {山本修一郎 and 周藤悠介 and 菅原聡},
  title = {スピン機能CMOSによる不揮発性高機能・高性能ロジック},
  year = 2009,
}

@misc{CTT100594073,
  author = {Shuu'ichirou Yamamoto},
  title = {原子層MOCVD法による高温超伝導薄膜デバイスに関する研究},
  year = 1999,
}

@misc{CTT100633942,
  author = {菅原聡 and 山本修一郎 and 周藤悠介},
  title = {電子回路},
  howpublished = {登録特許},
  year = 2013,
  month  = {},
  note   = {特願2009-078082(2009/03/27), 特開2010-232959(2010/10/14), 特許第5234547号(2013/04/05)}
}


@misc{CTT100654999,
  author = {山本修一郎 and 菅原聡},
  title = {スピン注入磁化反転ＭＴＪを用いた不揮発性ＳＲＡＭ／ラッチ回路},
  howpublished = {登録特許},
  year = 2013,
  month  = {},
  note   = {特願2009-530030(2008/07/31), 再表2009/028298(2010/11/25), 特許第5170706号(2013/01/11)}
}


@misc{CTT100587132,
  author = {菅原 聡 and 山本修一郎},
  title = {電子回路},
  howpublished = {公開特許},
  year = 2009,
  month  = {},
  note   = {特願2007-225698(2007/08/31), 特開2009-059884(2009/03/19)}
}




@phdthesis{CTT100594073,
  author = {Shuu'ichirou Yamamoto},
  title = {原子層MOCVD法による高温超伝導薄膜デバイスに関する研究},
  school = {東京工業大学},
  year = 1999,
}