論文

• 小田俊理 (訳), 小田俊理. ナノ結晶だけからなるトランジスターの製法, パリティ, Vol. 32, pp. 29-32, Apr. 2017.
• Takamasa Kawanago, Shunri Oda. Control of threshold voltage by gate metal electrode in molybdenum disulfide fieldeffect, Applied Physics Letters, Vol. 110, 133507, Mar. 2017.
• J. O. Tenorio-Pearl, E. D. Herbschleb, S. Fleming, C. Creatore, S. Oda, W. I. Milne, A. W. Chin. Observation and coherent control of interface-induced electronic resonances in a field-effect transistor, Nature Materials, Vol. 16, pp. 208-213, 2017.
• J. O. Tenorio-Pearl, E. D. Herbschleb, S. Fleming, C. Creatore, S. Oda, W. I. Milne, A. W. Chin. Observation and coherent control of interface-induced electronic resonances in a field-effect transistor, Nature Materials, Sept. 2016.
• Y. Yamaoka, Shunri. Oda, T. Kodera. Electron transport in physically-defined double quantum dots on a highly doped silicon-on-insulator substrate, Appl. Phys. Lett., Vol. 109, p. 113019-1-4, Sept. 2016.
• Zhengyu Xu, Koichi Usami, Marolop Simanullang, Tomohiro Noguchi, Yukio Kawano, Shunri Oda. Effect of gold migration on the morphology of germanium nanowires grown by a two-step growth method with temperature modulation, The Japan Society of Applied Physics, Vol. 55, No. 8, p. 085002, July 2016.  公式リンク  
  
• Zhengyu Xu, kouichi usami, Tomohiro Noguchi, Yukio Kawano, Teruyuki Ohashi, Takahisa Tanaka, Tsunaki Takahashi, Shunri Oda, Ken Uchida. Experimental Study on Deformation Potential (D_ac) in MOSFETs: Demonstration of Increased D_ac at MOS Interfaces and Its Impact on Electron Mobility, IEEE Journal of the Electron, Vol. PP, p. 1, June 2016.
• Tomohiro Noguchi, Marolop Simanullang, Zhengyu Xu, Koichi Usami, Tetsuo Kodera, Shunri Oda. Synthesis of Ge/Si core/shell nanowires with suppression of branch formation, Applied Physics Express, The Japan Society of Applied Physics, Vol. 9, No. 5, p. 055504, Apr. 2016.  公式リンク  
  
• Marolop Simanullang, Gde Bimananda Mahardika Wisna, Koichi Usami, Wei Cao, Yukio Kawano, Kaustav Banerjee, Shunri Oda. Undoped and catalyst-free germanium nanowires for high-performance p-type enhancement-mode field-effect transistors, Journal of Materials Chemistry C, Royal Society of Chemistry, Vol. 4, No. 22, pp. 5102-5108, Apr. 2016.  公式リンク  
  
• Takamasa Kawanago, Shunri Oda. Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors, Applied Physics Letters, Vol. 108, pp. 041605-5, Jan. 2016.
• Takahisa Tanaka, Yuya Kurosawa, Naotoshi Kadotani, Tsunaki Takahashi, Shunri Oda, Ken Uchida. Deionization of Dopants in Silicon Nanofilms Even with Donor Concentration of Greater than 1019 cm–3, Nano Letters, Vol. 16 (2), pp. 1143–1149, Jan. 2016.
• Takamasa Kawanago, Shunri Oda. Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum, Applied Physics Letters, Vol. 108, pp. 041605 (2016) 1-4, Jan. 2016.
• Jie Yu (于杰)1, Kun-ji Chen (陈坤基)1, 3, Zhong-yuan Ma (马忠元)1, Xin-xin Zhang (张鑫鑫)1, Xiao-fan Jiang (江小帆)1, Yang-qing Wu (吴仰晴)1, Xin-fan Huang (黄信凡)1, Shunri Oda. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices, Chinese Physics B, Vol. 25, p. 097304-1-5, 2016.
• Shotaro Yamazaki, Yoshifumi Nakamine, Ran Zheng, Masahiro Kouge, Tetsuya Ishikawa, Koichi Usami, Tetsuo Kodera, Yukio Kawano, Shunri Oda. Formation of three-dimensionally integrated nanocrystalline silicon particles by dip-coating method, Japanese Journal of Applied Physics, Vol. 54, pp. 105001-5, Sept. 2015.
• S. Ihara, A. Andreev, D. A. Williams, T. Kodera, S. Oda. Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures, Applied Physics Letters, Vol. 107, pp. 013102 (2015), July 2015.
• Dalin Zhang, Zhi Liu, Dongliang Zhang, Xu Zhang, Junying Zhang, Jun Zheng, Yuhua Zuo, Chunlai Xue, Chuanbo Li, Shunri Oda, Buwen Cheng, Qiming Wang. Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular, The Journal of Physical Chemistry, 119, pp. 17842-17847, July 2015.
• Tomohiro Noguchi, Kodai Morita, Marolop Simanullang, Zhengyu Xu, Tetsuo Kodera, Yukio Kawano, Shunri Oda. Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness, Phys. Status Solidi A, Wiley Online Library, Vol. 212, pp. 1578–1581, June 2015.  公式リンク  
  
• Kosuke Horibe, Tetsuo Kodera, Shunri Oda. Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate, Applied Physics Letters, Vol. 106, No. 8, pp. 083111 (2015), Feb. 2015.
• K. Horibe, T. Kodera, S. Oda. Lithographically-defined few-electron silicon quantum dots based on a silicon-on-insulator substrate, Internatilnal Workshop on silicon Quantum Electronics, Applied Physics Letters, Vol. 106, pp. 083111, Feb. 2015.
• Kosuke Horibe, Tetsuo Kodera, Shunri Oda. Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor, Applied Physics Letters, Vol. 106, No. 5, pp. 053119 (2015), Feb. 2015.
• Akhmadi Surawijaya, Yukio Kawano, Shunri Oda. Proposal for fast-response radial Schottky junction photodetectors based on silicon nanowires, Japanese Journal of Applied Physics, Vol. 54, No. 3, pp. 034301 (2015), Feb. 2015.
• Kazufumi Ikemoto, Yoshifumi Nakamine, Yukio Kawano, Shunri Oda. In-Situ Monitoring of Silicon Nanocrystal Deposition with Pulsed SiH4 Supply by Optical Emission Spectroscopy of Ar Plasma, Japanese Journal of Applied Physics, Vol. 53, No. 11, pp. 116102 (4 pages), Oct. 2014.
• Ko Yamada, Tetsuo Kodera, Tomohiro Kambara, Shunri Oda. Fabrication and characterization of p-channel Si double quantum dots, Applied Physics Letters, Vol. 105, No. 11, pp. 113110 (2014), Sept. 2014.
• J. Kamioka, T. Kodera, K. Takeda, T. Obata, S. Tarucha, S. Oda. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts, Journal of Applied Physics, Vol. 115, pp. 203709 (5 pages), May 2014.
• Marolop Simanullang, Koichi Usami, Tomohiro Noguchi, Akhmadi Surawijaya, Tetsuo Kodera, Yukio Kawano, Shunri Oda. Surface passivation of germanium nanowires using Al2O3 and HfO2 deposited via atomic layer deposition (ALD) technique, Japanese Journal of Applied Physics, Vol. 53, pp. 06JG04, May 2014.  公式リンク  
  
• T. Ferrus, A. Rossi, A. Andreev, T. Kodera, T. Kambara, W. Lin, S. Oda, D. A. Williams. GHz photon-activated hopping between localized states in a silicon quantum dot, New Journal of Physics, Vol. 16, pp. 013016 (18 pages), Jan. 2014.
• Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Yukio Kawano, Shunri Oda. Microscopic study of germanium nanowires grown via gold-catalyzed chemical vapor deposition below the eutectic temperature, Journal of Crystal Growth, Vol. 384, pp. 77-81, Dec. 2013.  公式リンク  
  
• M. A. Sulthoni, T. Kodera, Y. Kawano, S. Oda. Optimization and Tunnel Junction Parameters Extraction of Electro-statically Defined Silicon Double Quantum Dots Structure, Japanese Journal of Applied Physics, Vol. 52, pp. 081301 (5 pages), July 2013.
• Tsunaki Takahashi, Shunri Oda, Ken Uchida. Methodology for Evaluating Operation Temperatures of Fin-Type Field-Effect Transistors Connected by Interconnect Wires, Japanese Journal of Applied Physics, Vol. 52, pp. 064203 (7 pages), May 2013.
• K. Takeda, T. Obata, Y. Fukuoka, W. M. Akhtar, J. Kamioka, T. Kodera, S. Oda, S. Tarucha. Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots, Appl. Phys. Lett, Vol. 102, pp. 123113 (3 pages), Mar. 2013.
• Teruyuki Ohashi, Shunri Oda, Ken Uchida. Impact of Deformation Potential Increase at Si/SiO$_{2}$ Interfaces on Stress-Induced Electron Mobility Enhancement in Metal–Oxide–Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, Vol. 52, pp. 04CC12 (6 pages), Mar. 2013.
• SHUNRI ODA, Jannatul Susoma, Yoshifumi Nakamine, Tetsuo Kodera. Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High Performance Electron Devices, Japanese Journal of Applied Physics, Vol. 52, pp. 04CH08 (4 pages), Mar. 2013.
• Daichi Suzuki, Shunri Oda, Yukio Kawano. GaAs/AlGaAs field-effect transistor for tunable terahertz detection and spectroscopy with built-in signal modulation, Applied Physics Letters, Vol. 102, pp. 122102 (4 pages), Mar. 2013.
• Aya Shindome, Yu Doioka, Nobuyasu Beppu, Shunri Oda, Ken Uchida. Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons, Japanese Journal of Applied Physics, Vol. 52, pp. 04CN05 (5 pages), Mar. 2013.
• Tomohiro Kambara, Tetsuo Kodera, Yasuhiko Arakawa, Shunri Oda. Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing, Jpn. J. Appl. Phys, Vol. 52, pp. 04CJ01 (4 pages), Feb. 2013.
• Tsunaki Takahashi, Nobuyasu Beppu, Kunro Chen, Shunri Oda, Ken Uchida. Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors, Japanese Journal of Applied Physics, Vol. 52, pp. 04CC03 (6 pages), Feb. 2013.
• K. Someno, K. Usami, T. Kodera, Y. Kawano, M. Hatano, S. Oda. Photoluminescence of Nanocrystalline Silicon Quantum Dots with Various Sizes and Various Phosphorus Doping Concentrations prepared by Very High Frequency Plasma, Jpn. J. Appl. Phys, Vol. 51, pp. 115202-1-4, Oct. 2012.
• G. Yamahata, T. Kodera, H. O. H. Churchill, K. Uchida, C. M. Marcus, S. Oda. Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots, Physical Review B, Vol. 86, pp. 115322 (5 pages), Sept. 2012.
• M. A. Sulthoni, T. Kodera, Y. Kawano, S. Oda. A Multi-purpose Electrostatically Defined Silicon Quantum Dots, Jpn. J. Appl. Phys, Vol. 51, No. 2, pp. 02BJ10-1-4, May 2012.
• K. Horibe, T. Kodera, T. Kambara, K. Uchida, S. Oda. Key capacitive parameters for designing single-electron transistor charge sensors, J. Appl. Phys, Journal of Applied Physics, Vol. 111, pp. 093715-1-5, May 2012.
• T. Ferrus, A. Rossi, W. Lin, D. A. Williams, T. Kodera, S. Oda. Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots, AIP Advances 2, Vol. 2, pp. 022114-1-9, Apr. 2012.
• Muhammad A. Rafiq, Katsunori Masubuchi, Zahid A. K. Durrani, Alan Colli, Hiroshi Mizuta, William I. Milne, Shunri Oda. High ON/OFF ratio and multimode transport in silicon nanochains field effect, Applied Physics Letters, Vol. 100, pp. 113108 (4 pages), Mar. 2012.
• Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, YoshiChika Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda. Temperature Evolution of Spin Polarized Electron Tunneling in Silicon Nanowire-Permalloy Lateral Spin Valve System, Applied Physics Express, Vol. 5, pp. 045001 (3 pages), Mar. 2012.
• Muhammad Amin Sulthoni, Tetsuo Kodera, Yukio Kawano, Shunri Oda. A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure, Japanese Journal of Applied Physics, Vol. 51, pp. 02BJ10 (4 pages), Feb. 2012.
• Muhammad A. Rafiq, Katsunori Masubuchi, Zahid A. K. Durrani, Alan Colli, Hiroshi Mizuta, William I. Milne, Shunri Oda. Conduction Bottleneck in Silicon Nanochain Single Electron Transistors Operating at Room Temperature, Japanese Journal of Applied Physics, Vol. 51, pp. 025202 (6 pages), Feb. 2012.
• Marolop Simanullang, Ayse Seyhan, Koichi Usami, Tetsuo Kodera, Yukio Kawano, Shunri Oda. Low-temperature growth of Ge nanowires by vapor-liquid-solid chemical vapor deposition, ECS Transactions, Vol. 45, No. (3), pp. 17-29, 2012.
• Y. Nakamine, T. Kodera, K. Uchida, S. Oda. Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching, Japanese Journal of Applied Physics, Vol. 50, pp. 115002-1-4, Nov. 2011.
• Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda. Growth of narrow and straight germanium nanowires by vapour-liquid-solid chemical-vapour-deposition, Japanese Journal of Applied Physics, Vol. 50, pp. 105002 (6 pages), Oct. 2011.  公式リンク  
  
• N. Kadotani, T. Ohashi, T. Takahashi, S. Oda, K. Uchida. Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, Vol. 50, pp. 094101 (7 pages), Sept. 2011.
• Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda. Germanium nanowires with 3-nm-diameter prepared by low temperature vapour-liquid-solid chemical vapour deposition, Journal of Nanoscience and Nanotechnology, Vol. 11, pp. 8163-8168, Sept. 2011.  公式リンク  
  
• M. A. Sulthoni, T. Kodera, K. Uchida, S. Oda. Numerical simulation study of electrostatically defined silicon double quantum dot device, J. Appl. Phys., Vol. 110, pp. 054511 -1-4, Aug. 2011.
• Y. Ogawa, Y. Yuasa, F. Minami, S. Oda. Tip-enhanced Raman mapping of a single Ge nanowire, Applied Physics Letters, Vol. 99, pp. 053112 (3 pages), Aug. 2011.
• BERRIN PINAR ALGUL, 小寺 哲夫, 小田 俊理, 内田 建. Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade, Jpn. J. Appl. Phys, Vol. 50, pp. 04DN01 (4 pages), Apr. 2011.
• A. Rossi, T. Ferrus, W. Lin, T. Kodera, D. A. Williams, S. Oda. Detection of variable tunneling rates in silicon quantum dots, Appl. Phys. Lett., Vol. 98, pp. 133506-1-3, Apr. 2011.
• C. B. Li, K. Usami, H. Mizuta, S. Oda. Growth of Ge-Si nanowires heterostructure via chemical vapour deposition, Thin Solid Films, pp. 4174-4176, Apr. 2011.
• Jean L. Tarun, Shaoyun Huang, Y. Fukuma, H. Idzuchi, Y. Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda. Demonstration of spin valve effects in Silicon nanowires, Journal of Applied Physics, Vol. 109, 07C508, Apr. 2011.
• Tomohiro Kambara, Tetsuo Kodera, Tsunaki Takahashi, Gento Yamahata, Ken Uchida, Shunri Oda. Simulation study of charge modulation in coupled quantum dots in silicon, Japanese Journal of Applied Physics, Vol. 50, 04DJ05, Apr. 2011.
• T. Takahashi, T. Kodera, S. Oda, K. Uchida. Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field, Journal of Applied Physics, Vol. 109, pp. 034505, Feb. 2011.
• Y. Nakamine, N. Inaba, T. Kodera, K. Uchida, R. N. Pereira, A. R. Stegner, M. S. Brandt, M. Stutzmann, S. Oda. Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System, Japanese Journal of Applied Physics, Vol. 50, pp. 025002, Feb. 2011.
• Tetsuo Kodera, Gento Yamahata, Tomohiro Kambara, Kousuke Horibe, Thierry Ferrus, David A. Williams, Yasuhiko Arakawa, SHUNRI ODA. Realization of Lithographically-Defined Silicon Quantum Dots without Unintentional Localized Potentials, AIP Conference Proceedings, Vol. 1399, pp. 331-332, 2011.
• N. Kadotani, T. Takahashi, T. Ohashi, S. Oda, K. Uchida. Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm, Journal of Applied Physics, Vol. 110, pp. 034502. (7 pages), 2011.
• Y. Nakamine, T. Kodera, K. Uchida, S. Oda. Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching, Vol. 50, No. 115002, 4pages, 2011.
• T. Ishikawa, H. Nikaido, K. Usami, K. Uchida, S. Oda. Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots, Japanese Journal of Applied Physics, pp. 125002 (4 pages), Dec. 2010.
• X. Zhou, M. A. Rafiq, H. Mizuta, S. Oda. Size effect on hopping conduction in silicon nanocrystals, AIP Conf. Proc, Vol. 199, pp. 321-322, Jan. 2010.
• T. Nagami, Y. Tsuchiya, K. Uchida, H. Mizuta, S. Oda. Scaling Analysis of Nanoelectromechanical Memory Devices, Japanese Journal of Applied Physics, Vol. 49, in press, 2010.
• Jun Ogi, Mohammad Adel Ghiass, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, Shunri Oda, Hiroshi Mizuta. Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation, Japanese Journal of Applied Physics, Vol. 49, pp. 044001, 2010.
• 高橋綱己, 山端元音, 小木純, 小寺哲夫, 小田俊理, 内田建. 「強磁場印加による(110)pMOSFETサブバンド構造の直接的観測」, 『応用物理学会シリコンテクノロジー分科会研究集会予稿集』, 応用物理学会, No. 118, pp. 12-15, 2010.
• Jun Ogi, Thierry Ferrus, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, David A. Williams, Shunri Oda, Hiroshi Mizuta. Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots, Japanese Journal of Applied Physics, Vol. 49, pp. 045203, 2010.
• 小田俊理. シリコンナノ結晶のCVD成長と新機能, 日本結晶成長学会誌, Vol. 37 (4), 2010.
• G. Yamahata, T. Kodera, H. Mizuta, K. Uchida, S. Oda, H. Mizuta. Control of Inter-dot Electrostatic Coupling by a Side Gate in Silicon Double Quantum Dot Operating at 4.5 K, Appl. Phys. Express., Vol. 2, No. 9, pp. 095002, Sept. 2009.
• Xin Zhou, Ken Uchida, hiroshi mizuta, SHUNRI ODA. Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure, Journal of Applied Physics, Vol. 106, pp. 044511, Aug. 2009.
• Chuanbo Li, Kouichi Usami, T. Muraki, H. Mizuta, K. Uchida, S. Oda. The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate, Applied Physics Letters, Vol. 93, pp. 041917 (3 pages), Aug. 2009.
• Chuanbo Li, Kouichi Usami, Hiroshi Mizuta, SHUNRI ODA. Vapor-solid-solid radial growth of Ge nanowires, Journal of Applied Physics, Vol. 106, pp. 046102, Aug. 2009.
• G. Yamahata, Y. Tsuchiya, H. Mizuta, K. Uchida, S. Oda. Electron transport through silicon serial triple quantum dots, Solid State Electronics, Vol. 53, pp. 779-785, July 2009.
• D. Hippo, Y. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshida, S. Oda. Spontaneous Emission Control of Silicon Nanocrystals by Silicon Three-Dimensional Photonic Crystal Structure Fabricated by Self-Aligned Two-Directional Electrochemical Etching Method, Materials Chemistry and Physics, Vol. 116, pp. 107-111, July 2009.
• R. Singha, S. Das, Achintya Dhar, Samir K. Lahiri, Samit K. Ray, Akhmadi Surawijaya, Shunri Oda. Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si(001) by, Nanoscience and Nanotechnology Letters, Vol. 1 (2), pp. 82-86, June 2009.
• Benjamin Henri Jose Pruvost, K. Uchida, H. Mizuta, S. Oda. Design optimization of NEMS switches for suspended-gate single-electron transistor applications, IEEE Transactions on Nanotechnology, 8 (2), 174-184, Mar. 2009.
• C. B. Li, K. Usami, G. Yamahata, Y. Tsuchiya, H. Mizuta, S. Oda. Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate, Applied Physics Express, 2 (1), 015004, Jan. 2009.
• Tasuku Nagami, Yoshishige Tsuchiya, Shinichi Saito, Tadashi Arai, Toshikazu Shimada, hiroshi mizuta, SHUNRI ODA. Electro-Mechanical Simulation of Switching Characteristics for Nanoelectromechanical, Japanese Journal of Applied Physics, 2009.
• Hiroshi Mizuta, Mario A.G. Ramirez, Yoshishige Tsuchiya, Tasuku Nagami, Shun-ichiro Sawai, Shunri Oda, Masakuni Okamoto. MULTI-SCALE SIMULATION OF HYBRID SILICON NANO-ELECTROMECHANICAL (NEM) INFORMATION SYSTEMS, Journal of Automation, Mobile Robotics & Intelligent Systems, pp. 58-61, 2009.
• Xin Zhou, K. Uchida, H. Mizuta, S. Oda. Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films, 2009.
• Benjamin Henri Jose Pruvost, Ken Uchida, hiroshi mizuta, SHUNRI ODA. Design of New Logic Architectures utilizing Optimized Suspended-Gate Single-Electron Transistors, IEEE Transactions on Nanotechnology, 2009.
• MANOHARAN MURUGANATHAN, Yoshishige Tsuchiya, SHUNRI ODA, hiroshi mizuta. Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K, Nano Letters, Vol. 8 (12), pp. 4648-4652, Dec. 2008.
• Muhammand Rafiq, Z. A. K. Durrani, hiroshi mizuta, A Colli, P Servati, A. C. Ferrari, W. I. Milne, SHUNRI ODA. Field-dependant hopping conduction in silicon nanocrystal films, Journal of Applied Physics, Vol. 104, pp. 123710 (3 pages), Dec. 2008.
• Saeed Akhtar, A Tanaka, K. Usami, Y. Tsuchiya, S. Oda. Influence of the Crystal Orientation of Substrate on Low Temperature Synthesis of Silicon Nanowires from Si2H6, Thin Solid Films, Vol. 517(5), pp. 317-319, Nov. 2008.
• H-J Cheong, A. Tanaka, D. Hippo, K. Usami, Y. Tsuchiya, H. Mizuta, S. Oda. Visible Electroluminescence from Spherical-shaped Silicon Nanocrystals, Japanese Journal of Applied Physics, Vol. 47, pp. 8137-8140, Oct. 2008.
• D. Hippo, Y. Nakamine, K. Urakawa, Y. Kawata, Y. Tsuchiya, H. Mizuta, N. Koshida, S. Oda. Formation Mechanism of 100 nm-Scale Periodic-Structures in Silicon Using Magnetic-Field-Assisted Anodization, Japanese Journal of Applied Physics, Vol. 47, pp. 7398-7402, Sept. 2008.
• M. Manoharan, Shunri Oda, Hiroshi Mizuta. Impact of channel constrictions on the formation of multiple tunnel junctions in heavily doped silicon single electron transistors, Applied Physics Letters, Vol. 93, pp. 112107 (3 pages), Sept. 2008.
• Y. Kawata, Y.Tsuchiya, S.Oda, H. Mizuta. Study of Single-Charge Polarization on a Pair of Charge Qubits Integrated Onto a Silicon Double, IEEE TRANSACTIONS ON NANOTECHNOLOGY, Vol. 7, No. 5, pp. 617-623, Sept. 2008.
• X. Zhou, K. Usami, M. A. Rafiq. H. Mizuta, Y. Tsuchiya, S. Oda. Influence of nanocrystal size on conduction mechanism across silicon nanocrystals, Journal of Applied Physics, Vol. 104, pp. 024518 (4 pages), July 2008.
• Gento Yamahata, Yoshishige Tsuchiya, Shunri Oda, Z. A. K. Durrani. Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures, Japanese Journal of Applied Physics, Vol. 47 (6), pp. 4820-4826, June 2008.
• Saeed AKHTAR, Kouichi USAMI, Yoshishige TSUCHIYA, Hiroshi MIZUTA, Shunri ODA. Size-Dependent Structural Characterization of Silicon Nanowires, Japanese Journal of Applied Physics, Vol. 47, No. 6, pp. 5053-5056, June 2008.
• Y. Kawata, SHUNRI ODA, Tomohiro Yamaguchi, Koji Ishibashi, Yoshishige. Observation of Quantum Level Spectrum for Silicon Double Single-Electron Transistors, Applied Physics Express, Vol. 1 (5), pp. 051401 (3 pages), May 2008.
• J. Ogi, Y. Tsuchiya, H. Mizuta, S. Oda. Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge, Microelectronics Engineering, Vol. 85 (5-6), pp. 1410-1412, May 2008.
• M. Manoharan, Benjamin Henri Jose Pruvost, Hiroshi Mizuta, Shunri Oda. Impact of key circuit parameters onsignal-to-noise ratio characteristics for theradio-frequency single electron transistors, IEEE Transactions on Nanotechnology, Vol. 7, No. 8, May 2008.
• A.Tanaka, Y.Tsuchiya, kouichi usami, S Saito, T.Arai, H.Mizuta, S.Oda. Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir-Blodgett Technique, Japanese Journal of Applied Physics, Vol. 47 (5), pp. 3731-3734, May 2008.
• M. A. Rafiq, Z. A. K. Durrani, H. Mizuta, A Colli, P Servati, A. C. Ferrari, W. I. Milne, S. Oda. Room temperature single electron charging in single silicon nanochains, JOURNAL OF APPLIED PHYSICS, Vol. 103, pp. 053705 (4 pages), Mar. 2008.
• Benjamin Henri Jose Pruvost, H. Mizuta, S. Oda. Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate discrete energy states, Journal of Applied Physics, Vol. 103, pp. 054508 (10 pages), Mar. 2008.
• M. Manoharan, Yoshishige Tsuchiya, Shunri Oda, Hiroshi Mizuta. Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation, Vol. 92, pp. 092110 (3 pages), Mar. 2008.
• Hiroshi Mizuta, Shunri Oda. Bottom-up approach to silicon nanoelectronics, Microelectronics Journal, Vol. 39, No. 2, pp. 171-176, Feb. 2008.
• M. Manoharan, Yoshiyuki Kawata, Yoshishige Tsuchiya, Shunri Oda, Hiroshi Mizuta. Strongly coupled multiple-dot characteristics in dual recess structured silicon channel, Applied Physics Letters, Feb. 2008.
• Yangdong ZHENG, Hiroshi MIZUTA, Shunri ODA. Theoretical Study of Nonequilibrium Electron Transport and Charge Distribution in a Three-site Quantum Wire, Japanese Journal of Applied Physics, Vol. 47 (1A), No. 1A, pp. 371-382, Jan. 2008.
• Saeed Akhtar, Koichi Usami, Yoshishige Tsuchiya, Hiroshi Mizuta, Shunri Oda. Vapor–Liquid–Solid Growth of Small- and Uniform-Diameter Silicon Nanowiresat Low Temperature from Si2H6, Applied Physics Express, Vol. 1, No. 1, pp. 014003 (3 pages), Jan. 2008.
• Yangdong Zheng, Hiroshi Mizuta, Shunri Oda. Nonequilibrium transport properties for a three-site quantum wire model, physica status solidi (c), Vol. 5 (1), pp. 56-60, Jan. 2008.
• Y. Kawata, M. Khalafalla, K. Usami, Y. Tsuchiya,, H. Mizuta, S. Oda. Integration of tunnel-coupled double nanocrystalline silicon quantum dots with a multiple gate single-electron transistor Japanese, Journal of Applied Physics, Vol. 46 (7A), pp. 4386-4389, July 2007.
• Tasuku Nagami, hiroshi mizuta, N.Momo, Yoshishige Tsuchiya, S. Saito, T. Arai, T. Shimada, S. Oda. Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory, IEEE Trans. Electron Devices, Vol. 54 (5), pp. 1132 - 1139, May 2007.
• S. Oda, S. Y. Huang, M. A. Salem, D. Hippo, H. Mizuta. ChargeStorage and Electron/Light Emission Properties of Silicon Nanocrystals, Physica E, Vol. 38, pp. 59-63, Apr. 2007.
• B. Pruvost, H. Mizuta, S. Oda. 3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs, IEEE Transactions on Nanotechnology, Vol. 6 (2), pp. 218-224, Mar. 2007.
• daihei hippo, Kei Urakawa, Yoshiyuki Kawata, Yoshishige Tsuchiya, hiroshi mizuta, Nobuyoshi Koshida, SHUNRI ODA. New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures, Japanese Journal of Applied Physics, Vol. 46 (2), pp. 633-637, Feb. 2007.
• M. Khalafalla, Z. A.K. Durrani, H. Ahmed, S. Oda, H. Mizuta. Observation of Interdot Coupling Phenomena in Nanocrystalline Silicon Point-Contact Structures, Current Applied Physics, Vol. *, No. 3, pp. 536-540, June 2006.
• A. Surawijaya, H. Mizuta, S. Oda. Observation and Analysis of Tunneling Properties of a Single Spherical Nanocrystalline Silicon Quantum Dot, Japanese Journal of Applied Physics, Vol. 45, No. 4B, pp. 3638-3641, 2006.
• M. Khalafalla, H. Mizuta, Z. A.K. Durrani, H. Ahmed, S. Oda. Observation of Interdot Coupling Phenomena in Nanocrystalline Silicon Point-Contact Structures, Current Applied Physics, Vol. 6, No. 3, pp. 536-540, 2006.
• Y. Tsuchiya, K. Takai, N. Momo, T. Nagami, S. Yamaguchi, T. Shimada, H. Mizuta, S. Oda. Nano-electro-mechanical nonvolatile memory device incorporating nanocrystalline Si dots, Journal of Applied Physics, Vol. 100, pp. 094306 (6 pages), 2006.
• M. A. Rafiq, Y. Tsuchiya, H. Mizuta, S. Oda, S. Uno, Z. A. K. Durrani, W. I. Milne. Hopping conduction in size-controlled Si nanocrystals, Journal of Applied Physics, Vol. 100, pp. 014303 (4 pages), 2006.
• A. Tanaka, Y. Tsuchiya, K. Usami, H. Mizuta, S. Oda. High-Density Assembly of Nanocrystalline Silicon Quantum Dots, Current Applied Physics, Vol. 6, No. 3, pp. 344-347, 2006.
• Muhammand Rafiq, Yoshishige Tsuchiya, hiroshi mizuta, SHUNRI ODA, S． Uno, Z. A. K. Durrani, W. I. Milne. Charge injection and trapping in silicon nanocrystals, Applied Physics Letters, Vol. 87, pp. 182101(3 pages), Oct. 2005.
• M. A. Salem, Y. Tsuchiya, K. Usami, H. Mizuta, S. Oda. Study of charge quantization in individual silicon quantum dots using Kelvin Probe Force Microscopy, Japanese Journal of Applied Physics, Vol. 44, No. 2, 2005.
• S. Huang, S. Oda. Charge storage in nitrided nanocrystalline silicon dots, Applied Physics Letters, Vol. 87(17), 2005.
• M. A. Salem, H. Mizuta, S. Oda, Y. Fu, M. Willander. Atomic force microscope current-imaging study for current density through nanocrystalline silicon dots embedded in SiO2, Japanese Journal of Applied Physics, Vol. 44 (2), pp. 88-91, 2005.
• Y. D. Zheng, H Mizuta, Y. Tsuchiya, M. Endo, D. Sato, S. Oda. In situ real-time spectroscopic ellipsometry study of HfO2 thin films grown by using the pulsed-source MOCVD, Journal of Applied Physics, Vol. 97, pp. 023527, 2005.
• S. Oda. Characterization and Device Applications of Nanocrystalline Silicon Quantum Dots Prepared by VHF Plasma Processes, Gordon Research Conference on Plasma Processing Science, 2004.
• M. A. Salem, Y. Tsuchiya, K. Usami, H. Mizuta, S. Oda. Study of charge quantization in individual silicon quantum dots using Kelvin Probe Force Microscopy, Solid State Devices and Materials Conference, Extended Abstracts, 2004.
• H. Mizuta, M. Khalafalla, Z. A.K. Durrani, S. Uno, N. Koshida, Y. Tsuchiya, S. Oda. Electron Transport Properties and Device Applications of Nanocrystalline Silicon Quantum Dots, Electrochemical Society Meeting, 2004.
• H. Mizuta, M. Khalafalla, Z. A.K. Durrani, S. Uno, N. Koshida, Y. Tsuchiya, S. Oda. Bottom-up Silicon Nanoelectronics, ICSICT, 2004.
• Y. Tsuchiya, T. Nakatsukasa, H. Mizuta, S. Oda, A. Kojima, N. Koshida. Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode, MRS Fall Meeting, 2004.
• S. Oda. Nanocrystalline Silicon Quantum Dot Devices, International Symposium on Molecular Nano-Engineering and Its Development into Microsystems, 2004.
• S. Huang, K. Arai, K. Usami, S. Oda. Towards Long-Term Retention-Time Single-Electron-Memory Devices Based on Nitrided Nanocrystalline Silicon Dots, IEEE Transactions on Nanotechnology, Vol. 3, No. 1, pp. 210-214, 2004.
• S. Kanjanachuchai, Y. Tsuchiya, K. Usami, S. Oda. Nanocrystalline silicon dot displacement using speed-controlled tapping-mode atomic force microscopy, Microelectronic Engineering, Vol. 73-74, pp. 615-619, 2004.
• M. A. Salem, H. Mizuta, S. Oda. Probing electron charging in nanocrystalline Si dots using Kelvin Probe Force Microscopy, Applied Physics Letters, Vol. 85, No. 15, pp. 3262-3264, 2004.
• 土屋良重, 藤田啓嗣, 野平博司, 服部健雄, 水田博, 小田俊理. MOCVD法によるPrシリケート膜の作製と特性評価, 薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別 研究会「極薄シリコン酸化膜の形成・評価・信頼性」, 2004.
• 高居康介, 山口伸也, 土屋良重, 嶋田壽一, 水田博, 小田俊理. NEMSメモリデバイスの実現に向けた機械的特性の検討, 第51回応用物理学関係連合講演会, 2004.
• M. Khalafalla, H. Mizuta, Z. A. K. Durrani, H. Ahmed, S. Oda. Electron coupling states in quantum dots in nanocrystalline silicon, Silicon Nanoelectrinics Workshop, 2004.
• M. A. Salem, Y. Tsuchiya, K. Usami, H. Mizuta, S. Oda. Nanoscale Observation of Size and Potential for Charged Nanocrystalline Si Dots using KFM, 16th Internatioinal Vacuum Congress, 2004.
• M. A. Salem, H. Mizuta, S. Oda, Y. Fu, M. Willander. AFM current imaging for surface oxidized nanocrystalline silicon dot, International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, 2004.
• 藤田啓嗣, 土屋良重, 野平博司, 服部健雄, 水田博, 小田俊理. MOCVD法によるPrシリケート膜の作製及び特性評価, 第51回応用物理学関係連合講演会, 2004.
• S. Huang, K. Usami, Y. Tsuchiya, H. Mizuta, S. Oda. Charge Storage in Nitrided nc.-Si Dots, Promising Memory Nodes for Nonvolatile Memory Application, 第51回応用物理学関係連合講演会, 2004.
• M. Khalafalla, H. Mizuta, Z. A. K. Durrani, H. Ahmed, S. Oda. Interdot coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistors, 第51回応用物理学関係連合講演会, 2004.
• S. Huang, S. Oda. Silicon Quantum Dot Based Nonvolatile Memory Devices, 第６６回半導体集積回路技術シンポジウム, 2004.
• 筆宝大平, 水田博, 小田俊理. 3次元フォトニック結晶構造Si量子ドットレーザの提案, 第65回応用物理学会学術講演会, 2004.
• 東島賢, 黒川康良, 土屋良重, 岡本政邦, 水田博, 小田俊理. 第一原理計算(SIESTA)を用いたナノ結晶Si量子ドットの電子状態解析, 第65回応用物理学会学術講演会, 2004.
• 黒川康良, 東島賢, 土屋良重, 岡本政邦, 水田博, 小田俊理. 第一原理シミュレーションによるシリコンナノロッドの電子状態解析, 第65回応用物理学会学術講演会, 2004.
• 田中敦之, 土屋良重, 宇佐美浩一, 水田博, 小田俊理. 分散溶媒を用いたナノ結晶シリコンドットの配列制御, 第65回応用物理学会学術講演会, 2004.
• 永見佑, 百々信幸, 土屋良重, 斎藤慎一, 新井唯, 嶋田壽一, 水田博, 小田俊理. NEMSメモリデバイスにおけるスイッチング動作解析, 第65回応用物理学会学術講演会, 2004.
• M. A. Salem, H. Mizuta, S. Oda. Kelvin probe force microscopy study of charging nanocrystalline silicon dots, 第65回応用物理学会学術講演会, 2004.
• Y. Tsuchiya, K. Takai, N. Momo, S. Yamaguchi, T. Shimada, S. Koyama, K. Takashima, Y. Higo, H. Mizuta, S. Oda. Nano Electromechanical Memory Device Usingnc-Si Dots, Silicon Nanoelectrinics Workshop, 2004.
• Y. Tsuchiya, H. Fujita, H. Mizuta, H. Nohira, T. Hattori, S. Oda. Pr-silicate Ultrathin Films for High-k Gate Dielectrics Prepared by Metal-Organic Chemical Vapor Deposition, 46th Electronic Materials Conference, 2004.
• Y. Tsuchiya, K. Takai, N. Momo, S. Yamaguchi, T. Shimada, H. Mizuta, S. Oda. High-speed and nonvolatile nano electromechanical memory incorporating Si quantum dots, 27th International Conference on Physics of Semiconductors, 2004.
• Y. Tsuchiya, T. Iwasa, A. Tanaka, K. Usami, H. Mizuta, S. Oda. Formation of an Ordered Array of nc-Si Dots by Using a Solution Droplet Evaporation Method, MRS Spring Meeting, 2004.
• M. Khalafalla, H. Mizuta, Z. A. K. Durrani, H. Ahmed, S. Oda. Observation of coherent states in coupled nanocrystalline Si double dots at 4.2K, 27th International Conference on Physics of Semiconductors, 2004.
• Yoshishige Tsuchiya, kouichi usami, hiroshi mizuta, SHUNRI ODA. Formation of an Ordered Array of nc-Si Dots by Using a Solution Droplet Evaporation Method, MRS Proceedings: Nanoparticles and Nanowire Building Blocks-Synthesis, Processing, Characterization and Theory, Vol. 818, 2004.
• 中務琢也, 池澤健太, 田中敦之, 宇佐美浩一, 土屋良重, 小田俊理. ﾅﾉ結晶ｼﾘｺﾝ粒径縮小化に向けたﾊﾟﾙｽｶﾞｽﾌﾟﾗｽﾞﾏﾌﾟﾛｾｽの制御, 第64回応用物理学会学術講演会, 2003.
• S. Banerjee, S. Huang, Y. Tsuchiya, K. Usami, S. Oda. Localized charge injection in nanocrystalline silicon dot using an atomic force microscope tip, 第50回応用物理学関係連合講演会, 2003.
• Shaoyun Huang, Souri Banerjee, Raymond T.Tung, Shunri Oda. Electron Trapping, Storing and Emission in nanocrystalline Si dots by Capacitance-Voltage Measurements, Journal of Applied Physics, Vol. 93(1), pp. 576-581, 2003.
• S. Banerjee, S. Y. Huang, S. Oda. A narrow-channel few-electron-memory with nanocrystalline Si dots as floating gate: Evidencee of electron trapping and emission, IEEE Transactions on Nanotechnology, Vol. 2 (2), pp. 88-92, 2003.
• S. Oda. NeoSilicon materials and silicon nanodevices, Materials Science and Engineering B, Vol. 101, pp. 19-23, 2003.
• K. Arai, J. Omachi, S. Oda. No-phonon assisted recombination of surface oxidized nanocrystalline silicon dots, Japanese Journal of Applied Physics, 2003.
• K. Arai, S. Oda. Photoluminescence of Surface Nitrided Nanocrystalline Silicon Dots, Physica Status Solid (c), Vol. 0 (4), pp. 1254-1257, 2003.
• SHUNRI ODA. Observation of Quantum Confinement Effect in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices, Materials Research Society Symposium Proceedings, Vol. 737, pp. F11.3.1-F11.3.6, 2003.
• S. Huang, K. Arai, K. Usami, S. Oda. Towards Long-Term Retention-Time Single-Electron-Memory Based on Nitrided Nanocrystalline Silicon Dots, Silicon Nanoelectrinics Workshop, 2003.
• Y. Tsuchiya, M. Endo, M. Kurosawa, R.T.Tung T. Hattori, S. Oda. Pulsed Source MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry, Japanese Journal of Applied Physics, Vol. 42 (4B), pp. 1957-1961, 2003.
• Shaoyun Huang, Souri Banerjee, Raymond T.Tung, Shunri Oda. Evaluation of quantum confinement energy in nanocrystaline silicon dots from high-frequency conductance measurement, Journal of Applied Physics, Vol. 94 (11), pp. 7261-7265, 2003.
• S. Huang, K. Arai, K. Usami, S. Oda. Towards Long-Term Retention-Time Single-Electron-Memory Devices Based on Nitrided Nanocrystalline Silicon Dots, IEEE Transactions on Nanotechnology, 2003.
• S. Banerjee, M. A. Salem, S. Oda. Conducting-tip Atomic Force Microscopy for Injection and Probing of Localized Charges in Silicon Nanocrystals, Applied Physics Letters, Vol. 83 (18), pp. 3788-3790, 2003.
• 中務琢也, 中村暦, 土屋良重, 宇佐美浩一, 小田俊理, 小島明, 越田信義. ナノクリスタルシリコン平面型電子源の電子エネルギー分布, 第50回応用物理学関係連合講演会, 2003.
• 黒澤正敏, 吉岡健一, 土屋良重, 服部健雄, 小田俊理. パルス供給MOCVD法によるPrOxの作製と特性評価, 第50回応用物理学関係連合講演会, 2003.
• 遠藤真人, 鄭仰東, 土屋良重, 小田俊理. HfO2薄膜のMOCVD成長初期のエリプソメトリによるその場観察, 第50回応用物理学関係連合講演会, 2003.
• 岩佐達也, 土屋良重, 宇佐美浩一, 小田俊理. 液相分散系を用いたナノクリスタルシリコンの配列技術, 第50回応用物理学関係連合講演会, 2003.
• S. Oda. Silicon Nanodevices and NeoSilicon, International Conference on Materials for Advanced Technologies, 2003.
• S. Oda. Nanocrystalline Silicon Quantum Dot Devices, 6th Sweden-Japan QNANO Workshop, 2003.
• S. Oda. Fabrication and Device Application of Nanocrystalline Silicon Particles, Gas Phase Cluster Assembling of Nanostructured Materials, 2003.
• S. Kanjanachuchai, Y. Tsuchiya, K. Usami, S. Oda. Nanocrystalline silicon dots displacement using tapping-mode atomic force microscopy, Micro and Nano Engineering, 2003.
• S. Huang, K. Arai, K. Usami, Y.Tsuchiya, S. Oda. Long-term retention-time memory devices using dual memory nodes: nanocrystalline-silicon and silicon nitride, 第64回応用物理学会学術講演会, 2003.
• 高居康介, 山口伸也, 土屋良重, 嶋田壽一, 小田俊理. ﾅﾉ結晶ｼﾘｺﾝﾄﾞｯﾄを用いたNEMSﾒﾓﾘﾃﾞﾊﾞｲｽの提案, 第64回応用物理学会学術講演会, 2003.
• 鄭仰東, 土屋良重, 佐藤大典, 小田俊理. 分光ｴﾘﾌﾟｿﾒﾄﾘによるHFO2薄幕のﾊﾟﾙｽ供給MOCVD成長過程の観察とﾓﾃﾞﾘﾝｸﾞ, 第64回応用物理学会学術講演会, 2003.
• M. A. Salem, S. Banerjee, S. Oda. Estimation of charge injected in a single Si dot using AFM, 第64回応用物理学会学術講演会, 2003.
• Y. Tsuchiya, M. Endo, S. Oda. Pulsed-source MOCVD HfO2 ultrathin film growth optimized by in situ ellipsometry monitoring, Solid State Devices and Materials Conference, Extended Abstracts, 2003.
• Y. Tsuchiya, T. Nakatsukasa, R. Nakamura, K. Nishiguchi, S. Oda, A. Kojima, N. Koshida. Evidence of Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode, FEMD Newsletter, 2003.
• S. Huang, S. Banerjee, Y. Tsuchiya, K. Usami, S. Oda. Investigation of nc-Si Quantum Dot Based p/n Channel Few-Electron Devices, 第50回応用物理学関係連合講演会, 2003.
• SHUNRI ODA. NeoSilicon: Silicon quantum dots with controlled interparticle distance, International Workshop on Quantum Dots for Quantum Computing, pp. 18,paper 7, 2002.
• S. Y. Huang, S. Banerjee, S. Oda. Temperature and frequency dependencies of charging and discharging properties in MOS memory based on nanocrystalline silicon dot, Materials Research Society Symposium Proceedings, Vol. 715, pp. A12.5.1-A12.5.6, 2002.
• S. Y. Huang, S. Banerjee, S. Oda. C-V and G-V measurements showing single electron trapping in nanocrystalline silicon dot embedded in MOS memory structure, Materials Research Society Symposium Proceedings, Vol. 686, pp. A8.8.1-A8.8.6, 2002.
• S. Banerjee, S. Y. Huang, T.Yamanaka, S. Oda. Evidence of storing and erasing of electrons in nanocrystalline-Si based memory device at 77K, Journal of Vacuum Science and Technology, Vol. B20(3), pp. 1135-1138, 2002.
• K. Nishuguchi, X. Zhao, S. Oda. Nanocrystalline silicon electron emitter with a high efficiency enhanced by a planarization technique, Journal of Applied Physics, Vol. 92(5), pp. 2748-2757, 2002.
• K. Nishiguchi, S. Oda. Ballistic transport in silicon vertical transistors, Journal of Applied Physics, Vol. 92(3), pp. 1399-1405, 2002.
• Y. Tsuchiya, M. Endo, M. Kurosawa, R.T.Tung T. Hattori, S. Oda. Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry, Solid State Devices and Materials Conference, Extended Abstracts, pp. 474,P4-3, 2002.
• SHUNRI ODA. Single Electron and Ballistic Transport in Silicon Devices, ECS International Semiconductor Technology Conference, pp. Abs#44, 2002.
• S. Banerjee, S. Huang, S. Oda. Evidence of Electron Trapping and Emission in Nanocrystalline-Si Based Memory Devices, Silicon Nanoelectrinics Workshop, pp. 87,9-6, 2002.
• Shaoyun Huang, Souri Banerjee, Shunri Oda. Observation of Quantum Confinement Effect in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices, MRS Fall Meeting Boston, pp. F11.3, 2002.
• Souri Banerjee, Shaoyun Huang, Shunri Oda. Operation of a narrow channel memory device with a few Si quantum dots in the active region, E-MRS Spring Meeting, pp. S/PII.03, 2002.
• K. Arai, J. Omachi, S. Oda. Manifestation of the Quasi-Direct Recombination in Nanocrystalline Silicon Dots by Reducing the Core Diameter, Electrochemical Society, pp. Abs#1207, 2002.
• S. Y. Huang, S. Banerjee, S. Oda. Investigation of frequency and temperature dependence of C-V and G-V characteristics in SiO2/nc-Si/SiO2sandwich structure, 第49回応用物理学関係連合講演会, pp. 497,937, 2002.
• 遠藤真人, 黒澤正敏, H. Sauddin､ 平野貴裕, 服部健雄, 土屋良重, 小田俊理. 分光エリプソメトリによる高誘電率ゲート酸化膜成長のその場観察(2), 第49回応用物理学関係連合講演会, pp. 838, 2002.
• 黒澤正敏, 平野貴裕, 遠藤真人, H. Sauddin, 土屋良重, 服部健雄, 小田俊理. MOCVD法によるPr酸化物の作製と評価, 第49回応用物理学関係連合講演会, pp. 838, 2002.
• 新井健太, 小田俊理. 表面酸化シリコン量子ドットのPL特性の粒径依存性, 第49回応用物理学関係連合講演会, pp. 1471, 2002.
• 西口克彦, 趙新為, 小田俊理. ナノクリスタルシリコン平面型ホットエレクトロン放出素子の特性向上, 第49回応用物理学関係連合講演会, pp. 495,935, 2002.
• S. Banerjee, S. Y. Huang, S. Oda. Electron storing and emission in nanocrystalline Si-based memory device at 77K, 第49回応用物理学関係連合講演会, pp. 498,938, 2002.
• Shaoyun Huang, Souri Banerjee, Shunri Oda. Analysis of electron energy spacing in nanocrystalline silicon dots by C-V and G-V method, 第63回応用物理学会学術講演会, pp. 790, 2002.
• 遠藤真人, 黒澤正敏, 土屋良重, 服部健雄, R.T.Tung, 小田俊理. 分光エリプソエメトリによるHfO2による薄膜の原子層MOCVD成長その場観察, 第63回応用物理学会学術講演会, pp. 721, 2002.
• 小澤治, 高居康介, 星出祐亮, 土屋良重, 小田俊理. セルフアライン金属・半導体ダブルドット単電子素子の作製と評価, 第63回応用物理学会学術講演会, pp. 792, 2002.
• 新井健太, 森智彦, 小田俊理. 表面酸化シリコン量子ドットのＰＬ特性の窒化による変化, 第63回応用物理学会学術講演会, pp. 1258, 2002.
• S. Huang, S. Banerjee, S. Oda. Observation of Electron Trapping, Storage and Emission in Nanocrystalline Si Dots by C-V and G-V Measurements, FEMD Newsletter, Vol. 3(4), pp. 6-7, 2002.
• SHUNRI ODA. High efficiency electron/photon emission from silicon quantum dots, 5th Sweden-Japan QNANO Workshop, 2002.
• SHUNRI ODA. NeoSilicon material and silicon nanodevices, E-MRS Spring Meeting, pp. S-III.1, 2002.
• S. Y. Huang, S. Banerjee, S. Oda. Temperature and frequency dependence of charging and discharging properties in MOS memories based on nanocrystalline silicon dots, MRS Spring Meeting 2002 San Francisco, pp. 25,A12.5, 2002.
• K. Arai, S. Oda. Photoluminescence of Surface Nitrided Nanocrystalline Silicon Dots, 2nd International Conference on Semiconductor Quantum Dots, pp. 122,K-29, 2002.
• S. Y. Huang, S. Banerjee, S. Oda. Observation of Single Electron Trapping in nc-Si Dot by C-V Measurement, 第62回応用物理学会学術講演会, 2001.
• 松川康成, 黒澤正敏, 伊藤誠吾､服部健雄, 小田俊理. 原子レベルで制御する高誘電率ゲート酸化膜のMOCVD成長と分光エリプソメトリ観察, 第48回応用物理学関係連合講演会, 2001.
• B. J. Hinds, T.Yamanaka, S.Huang, R.Nakamura, S.Oda. Quantum Confinement Polarization Model for Lifetime of Discrete Charge Stored in Single Nano-crystalline Si Dot Floating-Gate Memory, 第48回応用物理学関係連合講演会, 2001.
• 小田俊理. シリコンナノデバイスとネオシリコン, シリコンテクノロジー分科会第27回研究集会, 2001.
• SHUNRI ODA. Nanocrystalline silicon quantum dots: fabrication, characterization and application, Yamada Conference LVII on Atomic-scale surface designing for functional low-dimensional materials, 2001.
• S. Y. Huang, S. Banerjee, S. Oda. C-V and G-V measurements showing single electron trapping in nanocrystalline silicon dot embedded in MOS memory structure, MRS Fall Meeting, 2001.
• SHUNRI ODA. Fabrication and device application of silicon nanostructures, AIST International Symposium on Nanotechnology, 2001.
• S. Oda, K. Nishiguchi. Single electron and ballistic transport in silicon nanoscale devices, FSRC Science and Technology of Silicon Materials, 2001.
• S. Oda, K. Nishiguchi. Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition, EUROCVD-13, 2001.
• SHUNRI ODA. NeoSilicon materials, Ninth Hitachi-Cambridge Seminar, 2001.
• S. Oda, K. Nishiguchi. Single electron and ballistic transport in silicon nanostructures, Sweden-Japanese Workshop on Quantum Nanostructure Devices, 2001.
• K. Nishiguchi, S. Oda. Ballistic transport under magnetic field in a silicon vertical structure device, Silicon Nanoelectrinics Workshop, 2001.
• S. Oda, S. Sugai, Y. Matsukawa. In situ ellipsometry of undoped and Ga-doped YBa₂Cu₃O_7-d films by MOCVD, International Superconductivity Electronics Conference, 2001.
• B. J. Hinds, T. Yamanaka, S. Oda. Emission Lifetime of Polarizable Charge Stored in Nano-Crystalline Si Based Single Electron Memory, Journal of Applied Physics, Vol. 90, No. 12, pp. 6402-6408, 2001.
• 新井健太, 大町純一, 小田俊理. 表面酸化によるSi量子ドットの発光強度の増大, 第62回応用物理学会学術講演会, 2001.
• 黒澤正敏, 遠藤真人, 服部健雄, 小田俊理. 原子層MOCVD法によるY₂O₃薄膜の作製と評価, 第62回応用物理学会学術講演会, 2001.
• 遠藤真人, 黒澤正敏, 服部健雄, 小田俊理. 分光エリプソメトリによる高誘電率ゲート酸化膜成長のその場観察, 第62回応用物理学会学術講演会, 2001.
• 大町純一､西口克彦, 新井健太､小田俊理. Ｓｉ量子ドットのストレス誘起酸化抑制（Ｉ）:ＴＥＭ観察, 第48回応用物理学関係連合講演会, 2001.
• 西口克彦, 趙新為, 小田俊理. ナノクリスタルシリコン平面型電子放出素子の最適化, 第48回応用物理学関係連合講演会, 2001.
• 新井健太､大町純一､西口克彦､小田俊理. Ｓｉ量子ドットのストレス誘起酸化抑制（ＩＩ）：ＰＬ評価, 第48回応用物理学関係連合講演会, 2001.
• K. Nishiguchi, X. Zhao, S. Oda. Enhancement of Electron Emission Characteristics from Nanocrystalline Silicon by Planarization Technique, Device Research Conference, 2001.
• K. Arai, J. Omachi, K. Nishiguchi, S. Oda. Photoluminescence study of the self-limiting oxidation in nanocrystalline silicon quantum dots, MRS Spring Meeting, 2001.
• 小田俊理. ２１世紀の単電子デバイス, 電気学会論文誌Ｃ, Vol. 121-C, No. 1, pp. 19-22, 2001.
• S. Oda, K. Nishiguchi. Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition, Journal de Physique IV, Vol. 11, No. Pr-3, pp. 1065-1071, 2001.
• Shuu'ichirou Yamamoto, Shunri Oda. Atomic Layer-by-Layer MOCVD of Complex Metal Oxides and Related Growth Technologies, Chemical Vapor Deposition, Vol. 7, No. 1, pp. 7-18, 2001.
• K. Nishiguchi, S. Oda. A self-alligned two-gate single-electron transistor derived from 0.12μm lithography, Applied Physics Letters, Vol. 78, No. 14, pp. 2070-2072, 2001.
• K. Arai, J. Omachi, K. Nishiguchi, S. Oda. Photoluminescence study of the self-limiting oxidation in nanocrystalline silicon quantum dots, Materials Research Society Symposium Proceedings, Vol. 664, pp. A20.6.1-A20.6.6, 2001.
• K. Nishiguchi, X. Zhao, S. Oda. Fabrication and characterization of cold electron emitter based on nanocrystalline silicon quantum dots, Materials Research Society Symposium Proceedings, Vol. 638, pp. F5.9.1-F5.9.6, 2001.
• J. Omachi, R. Nakamura, K. Nishiguchi, S. Oda. Retardation in the oxidation rate of nanocrystalline silicon quantum dots, Materials Research Society Symposium Proceedings, Vol. 638, pp. F5.3.1-F5.3.6, 2001.
• B. J. Hinds, T. Yamanaka, S. Oda. Charge Storage Mechanism in Nano-Crystalline Si Based Single Electron Memories, Materials Research Society Symposium Proceedings, Vol. 638, pp. F2.2.1-F2.2.6, 2001.
• S.Sugai, Y.Matsukawa, K.Shimosato, S.Oda. Stabilization of Oxygen Diffusion in Ga-doped YBa2Cu3O7-σ Thin Films Observed by Spectroscopic Ellipsometry, Japanese Journal of Applied Physics, Vol. 39, No. 10B, pp. L1032-L1034, 2000.
• A. Dutta, S. P. Lee, Y. Hayafune, S. Hatatani, S. Oda. Single Electron Tunneling Devices Based on Silicon Quantum Dots Fabricated by Plasma Process, Japanese Journal of Applied Physics, Vol. 39, No. 1, pp. 264-267, 2000.
• SHUNRI ODA. An era of reform for the New Century, FED Journal, Vol. 11, No. Suppl, pp. 3, 2000.
• 小田俊理. ２１世紀への道　電子材料－ナノシリコンとネオシリコン－, Electrochemistry, Vol. 68, No. 12, pp. 294-296, 2000.
• 小田俊理. ULSI技術は電気化学の時代, Electrochemistry, Vol. 68, No. 10, pp. 763, 2000.
• K. Nishiguchi, S. Oda. Conductance quantization in nanoscale vertical-structure silicon field-effect transistors with a wrap gate, Applied Physics Letters, Vol. 76, No. 20, pp. 2922-2924, 2000.
• Shunri Oda, Amit Dutta, Katsuhiko Nishiguchi, Bruce J.Hinds, X. Zhao, Shigeo Hatatani. Single Electron Tunneling and Ballistic Transport in Silicon Nanodevices, International Symposium on Formation, Physics and Device Application of Quantum Dot Structres, Sapporo, pp. 8, 2000.
• Bruce J. Hinds, Amit Dutta, Takayuki Yamanaka, Shigeo Hatatani, Shunri Oda. Nano-Crystalline Si as Floating Gate Node for Single Electron Memory Devices, International Symposium on Formation, Physics and Device Application of Quantum Dot Structres, Sapporo, pp. 114, 2000.
• Katsuhiko Nishiguchi, Shunri Oda. Ballistic transport under magnetic field in silicon vertical transistors, 25th International Conference on Physics of Semiconductors, Osaka, pp. 512, 2000.
• Katsuhiko Nishiguchi, X. Zhao, Shunri Oda. Fabrication and characterization of nanocrystalline silicon electron emitter, 25th International Conference on Physics of Semiconductors, Osaka, pp. 288, 2000.
• SHUNRI ODA. Electron Transport in Silicon Nanodevices, The 8th Asia Pacific Physics Conference, Taipei, pp. 49-50, 2000.
• K. Nishiguchi, S. Oda. Single-Electron Transistors with Two Self-Aligned Gates, Solid State Devices and Materials Conference, Extended Abstracts, Sendai, pp. 116-117, 2000.
• B. J. Hinds, A. Dutta, T. Yamanaka, S. Hatatani, S. Oda. lifetime measurements of electrons stored nano-crystalline Si single electron memory devices, IEEE Silicon Nanoelectrics Workshop, Honolulu, pp. 75-76, 2000.
• K. Nishiguchi, S. Oda. Ballistic transport in a silicon vertical transistor, IEEE Silicon Nanoelectrics Workshop, Honolulu, pp. 32-33, 2000.
• K. Nishiguchi, S. Oda. Electron transport in a single silicon quantum dot structure using a vertical silicon probe, IEEE Device Research Conference, Denver, pp. 79-80, 2000.
• B. J. Hinds, A. Dutta, F. Yun, T. Yamanaka, S. Hatatani, S. Oda. Single electron memory utilizing nano-crystalline Si over short channel silicon-on-insulator transistors, IEEE Device Research Conference, Denver, pp. 151-152, 2000.
• Amit Dutta, Yoshinori Hayafune, Shunri Oda. Single Electron Memory Devices Based on Plasma Derived Silicon Nanocrystals, Japanese Journal of Applied Physics, Vol. 39, No. 8B, pp. L855-L857, 2000.
• K. Nishiguchi, S. Oda. Electron transport in a single silicon quantum structure using a vertical silicon probe, Journal of Applied Physics, Vol. 88, No. 7, pp. 4186-4190, 2000.
• Z. Wang, S. Oda. Electrical properties of SrTiO3/BaTiO3 strained superlattice films prepared by atomic-layer metalorganic chemical vapor deposition, Journal of Electrochemical Society, Vol. 147, No. 12, pp. 4615-4617, 2000.
• A. Dutta, S. P. Lee, Y. Hayafune, S. Oda. Electron-Beam Direct-Writing using RD2000N for Fabrication of Nano-Devices, Journal of Vacuum Science and Technology, Vol. 18, No. 6, pp. 2857-2861, 2000.
• K. Nishiguchi, S. Hara, T. Amano, S. Hatatani, S. Oda. Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates, Materials Research Society Symposium Proceedings, Vol. 571, pp. 43-48, 2000.
• Y. Fu, M. Willander, A. Dutta, S. Oda. Carrier conduction in Si-nanocrystal-based single electron transistor-I. Effect of a gate bias, Superlattices and Microstructures, Vol. 28, No. 3, pp. 177-187, 2000.
• Y. Fu, M. Willander, A. Dutta, S. Oda. Carrier conduction in Si-nanocrystal-based single electron transistor-II. Effect of a drain bias, Superlattices and Microstructures, Vol. 28, No. 3, pp. 189-198, 2000.
• F. Yun, B. J. Hinds, S. Hatatani, S. Oda, Q. X. Zhao, M. Willander. Study of Structural and Optical Properties of Nanocrystalline Silicon Embedded in SIO2, Thin Solid Films, Vol. 375, No. 1-2, pp. 137-141, 2000.
• SHUNRI ODA. Silicon Nanodevices and Neosilicon, 10th Seoul International Symposium on the Physics of Semiconductor and Applications-2000, Cheju, pp. 60, 2000.
• SHUNRI ODA. Ballistic transport in silicon vertical transistors, 4th International Workshop on Quantum Functional Devices, Kanazawa, pp. 56-59, 2000.
• B.J.Hinds, T.Yamanaka, S.Hatatani, S.Oda. Charge Storage Mechanism in Nano-crystalline Si based Single-electron Memories, Materials Research Society 2000 Fall Meeting, Boston, pp. F2.2, 2000.
• J.Ohmachi, R.Nakamura, K.Nishiguchi, S.Oda. Retardation in the Oxidation rate of Nanocrystalline Silicon Quantum Dots, Materials Research Society 2000 Fall Meeting, Boston, pp. F5.3, 2000.
• K.Nishiguchi, S.Oda. Fabrication and Characterization of Cold Electron Emitter based on Nanocrystalline Silicon Quantum Dots, Materials Research Society 2000 Fall Meeting, Boston, pp. F5.9, 2000.
• 西口克彦, 小田俊理. シリコン縦型トランジスタによるバリスティック伝導の観測, 第47回応用物理学関係連合講演会, pp. 29p-C-6, 2000.
• Y. Feng, B. J. Hinds, A. Dutta, S. Hatatani, S. Oda. Single electron memory from nano-crystalline Si dots fromed by the disproportiation reaction of silicon suboxide, 第47回応用物理学関係連合講演会, pp. 29p-C-10, 2000.
• B.J.Hinds, T.Yamanaka, S.Hatatani, S.Oda. Lifetime Analysis of Single Electron Memory from Nano-crystalline Si Dots Floating-Gate over Nano-Scale Channel Transistor, 第61回応用物理学会学術講演会, pp. 4p-R-7, 2000.
• 吉田征一郎, 西口克彦, 小田俊理. シリコン量子ドットを用いた短チャネルスイッチング素子の提案, 第61回応用物理学会学術講演会, pp. 5p-ZE-15, 2000.
• 山中崇行, B.J.ハインズ, 畑谷成郎, 小田俊理. ナノ結晶シリコンを用いたナノチャネル単電子メモリの作製, 第61回応用物理学会学術講演会, pp. 4p-R-4, 2000.
• 松川康成, 下里圭司, 服部健雄, 小田俊理. 分光エリプソメトリによるMOCVD成長YBCO薄膜のその場観察(III）, 第61回応用物理学会学術講演会, pp. 4a-ZK-15, 2000.
• 西口克彦, 小田俊理. セルフアライン・ダブルゲート単電子トランジスタの作製, 第61回応用物理学会学術講演会, pp. 4a-R-7, 2000.
• 西口克彦, 趙新為, 小田俊理. ナノクリスタルシリコンを用いた平面型電子放出素子の作製, 第61回応用物理学会学術講演会, pp. 6p-ZB-6, 2000.
• F. Yun, B. J. Hinds, S. Hatatani, S. Oda. Room temperature single-electron narrow channel memory with silicon nanodots embedded in SiO2 matrix, Japanese Journal of Applied Physics, Vol. 39, No. 8A, pp. L792-L795, 2000.
• A. Dutta, S. Oda, Y. Fu, M. Willander. Electron Transport in Nanocrystalline-Si Based Single Electron Transistors, Japanese Journal of Applied Physics, Vol. 39, No. 7B, pp. 4647-4650, 2000.
• B. J. Hinds, K. Nishiguchi, A. Dutta, T. Yamanaka, S. Hatatani, S. Oda. Two-Gate Transistor for the Study of Si/SiO2 Interface in SOI Nano-Channel and Nanocrystalline Si memory Device, Japanese Journal of Applied Physics, Vol. 39, No. 7B, pp. 4637-4641, 2000.
• Z. Wang, S. Oda, M. Karlsteen, U. Sodervall, M. Willander. Structure analysis of SrTiO3/BaTiO3 strained superlattice films prepared by atomic-layer metalorganic chemical vapor deposition, Japanese Journal of Applied Physics, Vol. 39, No. 7A, pp. 4164-4167, 2000.
• S. Oda, D. F. Moore, W. I. Milne. The nanostructuring of materials for device and sensor applications, IEE Engineering Science and Education Journal, Vol. 8, No. 6, pp. 281-285, 1999.
• A.Dutta, S.P.Lee, Sigeo HATATANI, Shunri ODA. Silicon Based Single Electron Memory Using Multi-Tunnel Junction Fabricated by Electron Beam Direct Writing, Applied Physics Letters, Vol. 75, No. 10, pp. 1422-142, 1999.
• Shuichiro YAMAMOTO, Koji NAGATA, Satoshi SUGAI, Akio SENGOKU, Yasunari MATSUKAWA, Takeo HATTORI, Shunri ODA. Reproducible Growth of Meralorganic Chemical Vapor Deposition Derived, Japanese Journal of Applied Physics, Vol. 38, No. 8, pp. 4727-4732, 1999.
• S.YAMAMOTO, S. SUGAI, Y. MATSUKAWA, A.SENGOKU, H.TOBISAKA, T.HATTORI, S.ODA. In situ growth monitoring during metaloganic chemical vapor deposition of YBa2Cu3Ox thinfilms by spectroscopic ellipsometry, Japanese Journal if Applied Physics, Vol. 38, No. 6A/B, pp. L632-L635, 1999.
• S.YAMAMOTO, S.SUGAI, S.ODA. In Situ process monitoring of MOCVD of superconducting and dielectric oxide, Journal de Physique IV, Vol. 9, pp. Pr8-1013-1020, 1999.
• D.F.MOORE, W.I.MILNE, S.ODA. Nanostructured materials and devices for sensor and electronic application, Power Engineering Journal, Vol. 13, pp. 89-93, 1999.
• Zaiyang Wang, Tomohiko Yasuda, Shigeo Hatatani, Shunri Oda. Enhanced Dielectric Properties in SrTiO3/BaTiO3 Strained Superlattice Structures Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Vol. 38, No. 12A, pp. 6817-6820, 1999.
• Shigeru SUZUKI, Satoshi SUGAI, Shunri ODA. Electric Field-effect Enhancement by a Combination of Coplanar High-Tc Superconducting Devices with Step Edge Junctions, Japanese Journal of Applied Physics, Vol. 37, pp. L784-L786, 1998.
• M.Otobe, H.Yajima, S.Oda. Observation of Single Electron Charging Effect in Nanocrystalline Silicon at Room Temperature Using Atomic Force Microscopy, Applied Physics Letters, Vol. 72, pp. 1089-1091, 1998.
• S.Suzuki, H.Tobisaka, S.Oda. Electric Properties of Coplanar High-Tc Superconducting Field-Effect Devices, Japanese Journal of Applied Physics, Vol. 37, pp. 492-495, 1998.
• Z.Wang, S.Oda. Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO3 Films with a Very smooth Surface, Japanese Journal of Applied Physics, Vol. 37, pp. 942-947, 1998.
• Toru Ifuku, Masanori Otobe, Akira Itoh, Shunri Oda. Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma, Japanese Journal of Applied Physics, Vol. 36, pp. 4031-4034, 1997.
• Amit Dutta, Masao Kimura, Yoshiaki Honda, Masanori Otobe Akira Itoh, Shunri Oda. Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing, Japanese Journal of Applied Physics, Vol. 36, pp. 4038-4041, 1997.
• Yoshihiko Kanemitsu, Shinji Okamoto, Masanori Otobe, Shunri Oda. Photoluminescnce Mechanism in Surface-Oxidized Silicon Nanocrystals, Phys. Rev. B, Vol. 55, pp. R7375-R7378, 1997.
• S. Oda. Preparation of Nanocrystalline Silicon Quantum Dot Structure by Pulsed Plasma Processes, Adv. Colloid Interface Sci., Vol. 71-72, pp. 31-47, 1997.
• Shigeru Suzuki, S.Oda. Proposal of coplanar-type high-Tc superconducting field-effect devices, Physica C, Vol. 282-287, pp. 2495-2496, 1997.
• S. Yamamoto, A. Kawaguchi, S. Oda. Anomalous Current-Voltage Characteristics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography, Physica C, Vol. 293, pp. 244-248, 1997.
• 田部道晴, 小田俊理, 平本俊郎, 中里和郎, 雨宮好仁. 単電子デバイス・回路の研究状況と今後の展望, 応用物理, Vol. 66, pp. 99-108, 1997.
• S. Yamamoto, T. Watanabe, S. Oda. Junction Formation in YBaCuO Thin Films by Scanning Probe, J. Low. Temp. Phys, Vol. 106, pp. 423-432, 1997.
• S. Yamamoto, A. Kawaguchi, K. Nagata, T. Hattori, S. Oda. Atomic layer-by-layer epitaxy of oxide superconductors by MOCVD, Applied Surface Science, Vol. 112, pp. 30-37, 1997.
• Akira Itoh, Toru Ifuku, Masanori Otobe, S.Oda. Grain-Size Control of Nanocrystalline Silicon by Pulsed Gas Plasma Process, Materials Research Society Symposium Proceedings, Vol. 452, pp. 749-754, 1997.
• M. Otobe, J. Kawahara, S. Oda. Preferential Nucleation of Nanocrystalline Silicon along Microsteps, Japanese Journal of Applied Physics, Vol. 35, No. 2, pp. 1325-1328, 1996.
• M. Otobe, T. Kanai, T. Ifuku, H.Yajima, S. Oda. Nanocrystalline silicon formation in a SiH4 plasma cell, Journal of Non-Crystalline Solids, Vol. 198-200, pp. 875-878, 1996.
• S. Yamamoto, A. kawaguchi, S. Oda. Preparation of Thin Films of YBa2Cu30x with a Smooth Surface by Atomic Layer MOCVD, Mat. Sci. Eng. B, Vol. 41, pp. 87-92, 1996.
• T. Tsukui, S. Oda. Computer Simulation and Measurement of Capacitance-Voltage Characteristics in Quantum Wire Devices of Trench-Oxide MOS Structure, Jpn. J. Appl. Phys., Vol. 34, pp. 874-877, 1995.
• S. Oda, M. Otobe. Preparation of Nanocrystalline Silicon by Pulsed Plasma Processing, Mat. Res. Soc. Symp. Proc., Vol. 358, pp. 721-731, 1995.
• S. Oda, S. Yamamoto, H. Zama. Superconductivity and Surface Morphology of YBCO Thin Films Prepared by Metalorganic Chemical Vapor Deposition, IEEE Transactions on Applied Superconductivity, Vol. 5, pp. 1801-1804, 1995.
• M. Otobe, T. Kanai, S. Oda. Farication of Nano-crystalline Si by SiH4 Plasma Cell, Mat. Res. Soc. Symp. Proc., Vol. 377, pp. 51-56, 1995.
• S. Oda, S. Yamamoto, A. Kawaguchi. Atomic Layer-by-Layer MOCVD of Oxide Superconductors, Journal de Physique IV, Vol. C5, pp. 379-390, 1995.
• 小田俊理. MOCVD法による酸化物超伝導薄膜のエピタキシャル成長, 日本結晶成長学会誌, Vol. 22, pp. 395-402, 1995.
• S. Oda. Atomic Layer-by-Layer Metalorganic Chemical Vapor Deposition of YBa2Cu3Ox Thin Films, Electrotechnical Laboratory Bulletin of the Electrotechnical Laboratory, Vol. 58, No. 6, pp. 107-111, 1994.
• H. Zama, J. Saga, T. Hattori, S. Oda. Superconducting Properties of Ultrathin Films of YBa2Cu3Ox Prepared by Metalorganic Chemical Vapor Deposition at 500℃, Jpn. J. Appl. Phys., Vol. 33, pp. L312-314, 1994.
• S.Oda, M.Kobayashi, H.Zama. Preparation of Y-doped SrCuO2 Infinite Layer Films by MOCVD, Elsevier Physica C, pp. 235-240, 1994.
• S.Oda, M.Kobayashi, H.Zama. Preparation of Y-doped SrCuO┣D22┫D2 Infinite Layer Films by MOCVD, Physica C, Vol. 235-240, pp. 979-980, 1994.
• S. Oda, H. Zama, S. Yamamoto. Atomic Layer Controlled Metalorganic Chemical Vapor Deposition of Superconducting YBa┣D22┫D2Cu┣D23┫D2Ox Films, Journal of Crystal Growth, Vol. 145, pp. 232-236, 1994.
• S. Oda, K. Sakai, H. Zama. Staircase-like Structures in In Situ Optical Reflectance Measurement as an Evidence for Two-Dimensional Crystal Growth in Layer-by-Layer Chemical Vapor Deposition of YBa2Cu2Ox, Applied Surface Science, Vol. 75, pp. 259-262, 1994.
• S. Oda. (Frequency effects in Processing plasmas of the VHF band), Plasma Sources Sci Technol, Vol. 2, pp. 26-29, 1993.
• T. Tsukui, S. Oda. (Proposal of Trench-Oxide Metal-Oxide-Semiconductor Structure and Computer Simulation of Silicon Quantum-Wire Characteristics), Jpn J Appl Phys, Vol. 32, No. 12B, pp. 6213-6217, 1993.
• S. Oda, H. Zama, K. Fujii, K. Sakai, Y.C. Chen. Self-limiting adsorption and in situ optical monitoring for atomic layer epitaxy of oxide superconductors, Thin Solid Films, No. 225, pp. 284-287, 1993.
• K. Sakai, H. Zama, S. Oda. (In Situ Optical Monitoring of Two-Dimensional Crystal Growth in Layer-by-Layer Chemical Vapor Deposition of YBa┣D22┫D2Cu┣D23┫D2Ox), Jpn J Appl Phys, No. 32, pp. L638-L686, 1993.
• 小田俊理. Layer-by-Layer Growth and In Situ Optical Monitaring in CVD of oxide superconductors, Solid State Physics, Vol. 28, No. 10, pp. 659-663, 1993.
• 小田俊理. Prospects for Semiconductor Integrated Circuit, Electrochemical Society of Japan, Vol. 61, No. 1, pp. 25-26, 1993.
• M. Otobe, S. Oda. (The role of hydrogen radicals in nucleation and growth of nanocrystalline silicon), (Journal of Non-Crystalline Solids), Vol. 164-166, pp. 993-996, 1993.
• H. Zama, T. Miyake, T. Hattori, S. Oda. Preparation and Characterization of YBaCuO Superconducting Films by Low-Temperature Chemical Vapor Deposition Using β-Diketonate Complex and N┣D22┫D2O, Jpn J Appl Phys, Vol. 31, pp. 3839-3843, 1992.
• H. Zama, K. Sakai, S. Oda. In Situ Monitoring of Optical Reflectance Oscillation in Layer-by-Layer Chemical Vapor Deposition of Oxide Superconductor Films, Jpn J Appl Phys, Vol. 31, pp. L1243-L1245, 1992.
• M. Otobe, S. Oda. Preparation of Microcrystalline Silicon Films by Very-High-Frequency Digital Chemical Vapor Deposition, Japanese Journal of Applied Physics, Vol. 31, pp. 1948-1952, 1992.
• K. Fujii, H. Zama, S. Oda. (Preparation of YBa┣D22┫D2Cu┣D23┫D2Ox Thin Films by Layer-by-Layer Metalorganic Chemical Vapor Deposition), Jpn J Appl Phys, Vol. 31, pp. L787-L789, 1992.
• H. Zama, T. MIiyake, T. Hattori, S. Oda. (Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex), Jpn J Appl Phys, Vol. 31, pp. L588-L590, 1992.
• M. Otobe, S. Oda. (Role of Hydrogen Radical Treatment in Nucleation of Nanocrystalline Silicon), Jpn J Appl Phys, Vol. 31, pp. L1443-L1445, 1992.
• M. Otobe, S. Oda. (Growth Mechanism of Microcrystalline Silicon Prepared by Alternating Deposition of Amorphous Silicon and Hydrogen Radical Annealing), Jpn J Appl Phys, Vol. 31, pp. L1388-L1391, 1992.
• S. Oda, H. Zama, K. Masuda, K. Fujii, Y.C. Chen. Selflimiting Adsorption of Precursors for Chemical Vapor Deposition of Oxide Supercondductors, Physica C, Vol. 185-189, pp. 2001-2002, 1991.
• S. Oda, M. Yasukawa. High Quality a-Si : H and Interfaces Prepared by VHF Plasma CVD, J. Non-Crystalline Solids, Vol. 137/138, pp. 677-680, 1991.
• K. Shimizu, S. Oda, M. Matsumura. Fabrication of nanostructure by anisotropic wet etching of silicon, Japanese Journal of Applied Physics, Vol. 28, pp. L1778-L1779, 1989.
• S. Oda, H. Zama, T. Ohtsuka, K. Sugiyama, T. Hattori. Epitaxial growth of YBaCuO films on sapphire at 500℃ by metalorganic chemical vapor deposition, Japanese Journal of Applied Physics, Vol. 28, pp. L427-L429, 1989.
• S. Oda, R. Kawase, T. Sato, I.Shimizu, H. Kokado. Hydrogen radical assisted chemical vapor deposition of AnSe, Applied Physics Letters, Vol. 48, pp. 33-35, 1986.
• S. Oda, S. Ishihara, N. Shibata, H. Shirai, A. Miyauchi, K. Fukuda, A. Tanabe, H. Ohtoshi, J. Hanna, I. Shimizu. The role of hydrogen radicals in the growth of a-Si and related alloys, Japanese Journal of Applied Physics, Vol. 25, pp. 188-190, 1986.
• S. Oda, Y. Saitoh, I. Shimizu, E. Inoue. Electrophotographic studies of glow-discharge amorphous silicon, Philosophical Magazine, Vol. 43, pp. 1079-1089, 1981.
• S. Oda, K. Saito, H. Tomita, I. Shimizu, E. Inoue. The role of the blocking structure in a-Si : H vidicon target, Journal of Applied Physics, Vol. 52, pp. 7275-7280, 1981.
• H. Katayama, S. Oda, H. Kukimoto. ZnS blue-light-emitting diodes with an external quantum efficiency of 5x10┣D1-4┫D1, Applied Physics Letters, Vol. 27, pp. 697-699, 1975.

著書

• Shunri Oda, David K. Ferry. Nanoscale Silicon Devices, CRC Press, pp. 1-38, 2016.
• T. Kodera, S. Oda. Coupled Si quantum dots for spin-based qubits, Nanoscale Silicon Devices, CRC press, Chapter 10, pp. 231-253, 2015.
• 小田俊理. VLS Geナノワイヤ成長, ナノワイヤ最新技術の基礎と応用展開, pp. 38-47, Mar. 2013.
• Chuanbo Li, Hiroshi Mizuta, Shunri Oda. Chapter 22. Growth and Characterisation of Ge Nanowires by Chemical Vapour Deposition, Nanowires - Implementations and Applications (Edited by Abbass Hashim, InTech Press, Rijeka, Croatia), pp. 487-508, July 2011.
• 小田俊理. Si量子ドットを用いた単電子トランジスタの研究, 量子ドットエレクトロニクスの最前線, エヌ・ティー・エス, 2011.
• 小寺哲夫, 小田俊理. トップゲートとサイドゲートによるシリコン結合量子ドットの静電結合制御, 株式会社エヌ・ティー・エス, 2011.
• 小田俊理. メモリデバイス, 電子情報通信学会「知識ベース」, オーム社, 2011.
• M. Winterer, W. Gladfelter, D. Gamelin, S. Oda. Photovoltaics and Optoelectronics from Nanoparticles, Materials Research Society Symposium Proceedings, ISBN 978-1-60511-237-4, Vol. 1260, pp. 159 pages, 2010.
• 小田俊理. プラズマ技術によるナノシリコンドットの作製, ナノシリコンの最新技術と応用展開（越田信義監修、シーエムシー出版）, シーエムシー出版, 2010.
• S. Oda, S-Y Huang. Silicon Nanocrystal Flash Memory, Silicon Nanocrystals: Fundamentals, Synthesis and Applications, Edited by L. Pavesi and R Turan, Wiley VCH, Weinheim, pp. 395-444, 2010.
• 小田俊理. 量子化構造とデバイス, pp. 215-219, 2009.
• SHUNRI ODA, H. Mizuta, S. Uno, N. Mori, S. Oda, N. Koshida. Electron transport in nanocrystalline silicon, Device Applications of Silicon Nanocrystals and Nanostructures (Nanostructure Science and Technology), N. Koshida ed,, Springer, pp. 197-222, 2008.
• 森泉豊栄, 小田俊理, 山本寛, 川名明夫 編, 岩本光正. 電子物性・材料の事典, 朝倉書店, pp. total 696 pages, 2006.
• H. Mizuta, S. Uno, N. Mori, S. Oda, N. Koshida. Electron transport in nanocrystalline silicon, Springer, Vol. *, 2006.
• S-Y. Huang, H. Mizuta, S. Oda. Nanocrystalline Silicon Memory Devices, Handbook of Semiconductor Nanostructures and Nanodevices Edited by A. A. Balandin and K. L. Wang, American Scientific Publishers, pp. 131-194, 2006.
• H. Mizuta, S. Uno, N. Mori, S. Oda, N. Koshida. Electron transport in nanocrystalline silicon, Springer, pp. total 25 pages, 2006.
• S. Oda, D. Ferry. Silicon Nanoelectronics, ISBN 0824726332, CRC Press, pp. 1-328, 2005.
• S. Oda, D.F. Moore. Future Integrated Systems, ISBN 0 9535142 1 8, MTP, Cambridge, pp. 1-65, 2005.
• S-Y. Huang, H. Mizuta, S. Oda. Nanocrystalline Silicon Memory Devices, Handbook of Semiconductor Nanostructures and Nanodevices, Edited by A.A. Balandin and K.L. Wang, American Scientific Publishers, Los Angeles (2005), Vol. *, 2005.
• 小田俊理, 土屋良重. 表面加工(化学便覧　基礎編), 日本化学会編、丸善, 日本化学会編、丸善, 2004.
• Shunri Oda. MOCVD for Thin Film Growth, Vortex Electronics and SQUIDs, (Springer-Verlag), Vortex Electronics and SQUIDs, (Springer-Verlag), 2003.
• 小田俊理. 量子構造と界面, 界面ハンドブック(N.T.S.), 界面ハンドブック(N.T.S.), pp. 566-573, 2001.
• K. Nishiguchi, X. Zhao, S. Oda. Fabrication and characterization of nanocrystalline silicon electron emitter, Proceedings of the 25th International Conference on the Physics of Semiconductors, Eds by N. Miura and T. Ando (Springer, Berlin, 2001), Proceedings of the 25th International Conference on the Physics of Semiconductors, Eds by N. Miura and T. Ando (Springer, Berlin, 2001), pp. 1749-1750, 2001.
• K. Nishiguchi, S. Oda. Ballistic transport under magnetic field in silicon vertical transistors, Proceedings of the 25th International Conference on the Physics of Semiconductors, Eds by N. Miura and T. Ando (Springer, Berlin, 2001), Proceedings of the 25th International Conference on the Physics of Semiconductors, Eds by N. Miura and T. Ando (Springer, Berlin, 2001), pp. 1037-1038, 2001.
• SHUNRI ODA. Electron transport in silicon nanodevices, APPC 2000, Eds by Y. D. Yao et al (World Scientific, Singapore, 2001), APPC 2000, Eds by Y. D. Yao et al (World Scientific, Singapore, 2001), pp. 67-72, 2001.
• S.ODA, S.YAMAMOTO, Z.WANG, H.TOBISAKA, K.NAGATA. Atomic Layer MOCVD of Oxide Superconductors and Dielectrics, High-Temperature Superconductors and Novel Inorganic Materials,NATO Science Series (Eds. by Van Tendeloo et al., Kluwer Academic Publishers), High-Temperature Superconductors and Novel Inorganic Materials,NATO Science Series (Eds. by Van Tendeloo et al., Kluwer Academic Publishers), Vol. 62, pp. 75-78, 1999.
• S. Yamamoto, A. Kawaguchi, S. Oda. Critical Current Density of YBCO Ultra Thin Films Prepared by atomic Layer MOCVD, Advances in Superconductivity VII, Advances in Superconductivity VII, pp. 979-982, 1995.
• H. Zama, S. Oda, J. Saga, T. Hattori. Low Temperature Chemical Vapor Deposition of RBa┣D22┫D2Cu┣D23┫D2Ox (R┣D22┫D2Y, Pr) Ultra Thin Films, Advances in Superconductivity VI, (Springer-Verlag, Tokyo), Advances in Superconductivity VI, (Springer-Verlag, Tokyo), pp. 921-924, 1994.
• S. Oda, M.Otobe. Preparation of Nanocrystalline Silicon by Digital Chemical Vapor Deposition, Springer-Verlag Nanostructures and Quantum Effects, Springer-Verlag Nanostructures and Quantum Effects, Vol. 31, pp. 248-253, 1994.
• K. Sakai, H. Zama, S. Oda. In Situ Optical Diagnostics for Layer-by-Layer CVD of YBaCuO Films, Advances in Superconductivity V, Edited by Y. Bando and H. Yamauchi, (Springer-Verlag, Tokyo), Advances in Superconductivity V, Edited by Y. Bando and H. Yamauchi, (Springer-Verlag, Tokyo), pp. 841-844, 1993.
• S. Oda. Low-Temperature Growth of YBaCuO Films by Chemical Vapor Deposition, High Temperature Superconducting Electronics, Edited by K. Hara, (Ohmsha, Tokyo), High Temperature Superconducting Electronics, Edited by K. Hara, (Ohmsha, Tokyo), pp. 28-38, 1993.
• S. Oda, K.Sakai, H.Zama. In-Situ Optical Monitoring of Crystal Growth in Layer-by Layer Chemical Vapor Deposition of YBa┣D22┫D2Cu┣D23┫D2Ox, Proc. 6┣D1th┫D1 Topical Meeting on Crystal Growth Mechanism, Proc. 6┣D1th┫D1 Topical Meeting on Crystal Growth Mechanism, pp. 277-282, 1993.
• K. Sakai, H. Zama, S. Oda. (In Situ Optical Diagnostics for Layer-by-Layer CVD of YBaCuO Films), Advances in Superconductivity V, Edited by Y. Bando and H. Yamauchi, (Springer-Verlag, Tokyo), Advances in Superconductivity V, Edited by Y. Bando and H. Yamauchi, (Springer-Verlag, Tokyo), pp. 841-844, 1993.
• M. Otobe, S. Oda. (Separation of Nucleation and Growth Processes of Nanocrystalline Silicon by Hydrogen Radical Treatment of Hydrogenated Amorphous Silicon), Mat Res Soc Symp Proc, Mat Res Soc Symp Proc, pp. 283, 1993.
• H. Zama, R. Anzai, S. Oda, k. Hiroumi, K. Saito, T. Hattori. (The Relation Between Deposition Temperature, Superconductivity and Surface Morphology on CVD Process), Advances in Superconductivity V, Edited by Y. Bando and H. Yamauchi, (Springer-Verlag, Tokyo), Advances in Superconductivity V, Edited by Y. Bando and H. Yamauchi, (Springer-Verlag, Tokyo), pp. 947-950, 1993.
• M. Otobe, S. Oda. Crystallization Mechanism of Nanocrystalline Silicon Fabricated by Hydrogen Radical Annealing, Solid State Devices and Materials Conference, Extended Abstracts, Solid State Devices and Materials Conference, Extended Abstracts, pp. 395-397, 1992.
• H. Zama, K. Sakai, S. Oda. In-situ Optical Monitoring of Oxide Superconductor Growth for Layer-by-Layer Chemical Vapor Deposition, Solid State Devices and Materials Conference, Extended Abstracts, Solid State Devices and Materials Conference, Extended Abstracts, pp. 460-462, 1992.
• M. Otobe, S. Oda. The Role of Hydrogen Radicals in the Nanocrystallization of Silicon, Proc. Jpn. Symp. Plasma Chem., Proc. Jpn. Symp. Plasma Chem., Vol. 5, pp. 123-128, 1992.
• S. Oda. Frequency effects in processing plasmas-Experimental-, Proc. Jpn. Symp. Plasma Chem., Proc. Jpn. Symp. Plasma Chem., Vol. 5, pp. 7-12, 1992.

国際会議発表 (査読有り)

• Takahiro Matsuzaki, Takamasa Kawanago, SHUNRI ODA. Impact of Contact Doping on Electrical Characteristics in WSe2 FET, The Electrochemical Society PRiME 2020, Oct. 2020.
• Tomoaki Oba, Takamasa Kawanago, Shunri Oda. Gated Four-Probe Method for Evaluation of Electrical Characteristics in MoS2 Field-Effect Transistors, The 10th annual Recent Progress in Graphene and Two-dimensional Materials Research Conference (RPGR2018), Oct. 2018.
• Tomohiro Otsuka, Kenta Takeda, Jun Yoneda, Takumu Honda, Matthieu R. Delbecq, Giles Allison, Marian Marx, Takashi Nakajima, Tetsuo Kodera, Shunri Oda, Yusuke Hoshi, Noritaka Usami, Kohei M. Itoh, Seigo Tarucha. Measurement of charge states in Si/SiGe multiple quantum dots, Silicon Quantum Electronics Workshop 2016, June 2016.
• Marolop Dapot Krisman Simanullang, Gde Bimananda Mahardika Wisna, Koichi Usami, Wei Cao, Kaustav Banerjee, Shunri Oda. Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors, IEEE Silicon Nanoelectronics Workshop, June 2016.
• S. Oda. Silicon device technology for intelligent communications, IEEE EDS Minicolloquium, May 2016.
• Shunri Oda. Silicon quantum dots for future electronics and photonics, International Conference on Microwave and THz Technologies, Photonics and Wireless Communications, May 2016.
• Marolop Simanullang, G. Bimananda M. Wisna, Tomohiro Noguchi, Koichi Usami, Shunri Oda. Synthesis of Ge-core/Si-shell Nanowires with Conformal Shell Thickness Deposited after Au Removal, 28th International Microprocesses and Nanotechnology Conference, Nov. 2015.
• T. Kodera, K. Horibe, S. Oda. (Keynote) Devices Architectures and Technology for Quantum Computing, 228th ECS Meeting, Oct. 2015.
• T. Ferrus, T.-Y. Yang, Y. Yamaoka, T. Kambara, S. Oda, T. Kodera, D. Williams. Wireless manipulation of quantum states in silicon isolated double quantum dots, Silicon quantum information processing : scaling up, Sept. 2015.
• S. Oda. Silicon device technology for intelligent communications, EE Seminar (EPFL), Sept. 2015.
• S. Oda. Silicon nanocrystals for future, ICANS26, Sept. 2015.
• T. Ferrus, T.-Y. Yang, Y. Yamaoka, T. Kambara, S. Oda, T. Kodera, D. Williams. Wireless manipulation of quantum states in silicon isolated double quantum dots, Silicon Quantum Electronics Workshop 2015, Aug. 2015.
• T.-Y. Yang, Y. Yamaoka, A. Andreev, T. Ferrus, D. A. Williams, T. Kodera, S. Oda. Detection of electronic states in doped silicon double quantum dot, Silicon Quantum Electronics Workshop 2015, Aug. 2015.
• T. Kodera, K. Horibe, K. Yamada, S. Ihara, T. Kambara, A. Andreev, D. A. Williams, Y. Arakawa, S. Oda. Physically-defined quantum dots fabricated on silicon-on-insulator substrate, Silicon Quantum Electronics Workshop 2015, Aug. 2015.
• J. Yoneda, T. Honda, K. Takeda, M. Marx, T. Otsuka, T.Nakajima, M. R. Delbecq, S. Amaha, G. Allison, T. Kodera, S. Oda, S. Tarucha. Fabrication and characterization of gate-defined small Si-MOS quantum dot devices, Silicon Quantum Electronics Workshop 2015, Aug. 2015.
• M.Marx, K. Takeda, J. Yoneda, G. Allison, T. Honda, M. Delbecq, T.Otsuka, T.Nakajima, S. Amaha, T. Kodera, S. Oda, S.Tarucha. Increasing valley-splitting in Si/SiGe quantum dots, Silicon Quantum Electronics Workshop 2015, Aug. 2015.
• K. Takeda, J. Kamioka, T. Obata, T. Otsuka, T. Nakajima, M. R. Delbecq, S. Amaha, J. Yoneda, G. Allison, A. Noiri, R. Sugawara, T. Kodera, S. Oda, S. Tarucha. Fast addressable single-spin qubits in a Si/SiGe double quantum dot with a micro-magnet, Silicon Quantum Electronics Workshop 2015, Aug. 2015.
• K. Takeda, J. Kamioka, T. Obata, T. Otsuka, T. Nakajima, M. R. Delbecq, S. Amaha, J. Yoneda, A. Noiri, R. Sugawara, T. Kodera, S. Oda, S. Tarucha. A strongly driven single-spin qubit, Spintech VIII, Aug. 2015.
• T. Ferrus, T.-Y. Yang, Y. Yamaoka, T. Kambara, S. Oda, T. Kodera, D. Williams. Charge Qubits in Doped Quantum Dots : Effects on Computation and Coherence, Ninth International Conference on Quantum, Nano/Bio, and Micro Technologies, Aug. 2015.
• S. Hiraoka, K. Horibe, R. Mizokuchi, T. Kodera, S. Oda. Physically-defined silicon triple quantum dots in metal-oxide-semiconductor structures, Silicon Quantum Electronics Workshop 2015, Aug. 2015.
• Y. Yamaoka, S. Oda, T. Kodera. Characterization of physically-defined double quantum dots on highly-doped silicon substrate, Silicon Quantum Electronics Workshop 2015, Aug. 2015.
• S. Hiraoka, K. Horibe, T. Kodera, S. Oda. Physically-Defined Few-Electron Triple Quantum Dots in Metal-Oxide-Semiconductor Structures, 21th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21), July 2015.
• K. Horibe, K. Yamada, T. Kodera, S. Oda. Few-Electron and Few-Hole Regimes in Silicon Double Quantum Dots, 21th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21), July 2015.
• S. Ihara, A. Andreev, D. A. Williams, T. Kodera, S. Oda. Integration of Quantum Dots on Ultrathin Silicon-on-Insulator Film, 21th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21), July 2015.
• T. Ferrus, T.-Y. Yang, Y. Yamaoka, T. Kambara, S. Oda, T. Kodera, D. Williams. Wireless manipulation of quantum states in silicon isolated double quantum dots, 21th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21), July 2015.
• T. Noguchi, koudai morita, M. Simanullang, K. Usami, T. Kodera, S. Oda. Transport and thermoelectric properties in Ge/Si core/shell nanowires, the 15th International Conference on Modulated Semiconductor Structures (MSS-17), July 2015.
• T. Noguchi, M. Simanullang, Z. Xu, K. Usami, Yukio Kawano, T. Kodera, S. Oda. A Ge/Si core/shell nanowire with controlled low temperature grown Si shell thickness, 20th Biennial European Conference on Chemical Vapor Deposition (EuroCVD20), July 2015.
• K. Iwasaki, T. Kodera, S. Oda. Charge sensing of p-channel double quantum dots fabricated on (110) silicon substrate, IEEE 2015 Silicon Nanoelectronics Workshop, June 2015.
• Y. Yamaoka, T. Kodera, S. Oda. Fabrication and characterization of physically-defined double quantum dots without unintentional localized states on highly-doped silicon substrate, IEEE 2015 Silicon Nanoelectronics Workshop, June 2015.
• T. Honda, J. Yoneda, K. Takeda, T. Kodera, S. Tarucha, S. Oda. Fabrication of a highly controllable Si-MOS quantum dot device, IEEE 2015 Silicon Nanoelectronics Workshop, June 2015.
• T. Noguchi, K. Morita, M. Simanullang, Z. Xu, K. Usami, T. Kodera, S. Oda. Fabrication and Thermo-electric Properties of Ge/Si Core/Shell Nanowires, INC11, May 2015.
• T. Honda, K. Horibe, R. Mizokuchi, Lu Yi, K. Iwasaki, S. Hiraoka, T.Kodera, S. Oda. Coupled quantum dot devices, INC11, May 2015.
• S. Yamazaki, K. Ikemoto, Y. Shimamoto, S. Oda. Fabrication of silicon nanocrystals by VHF plasma processes, INC11, May 2015.
• Kenta Takeda, Jun Kamioka, Toshiaki Obata, Tomohiro Otsuka, Takashi Nakajima, Matthieu Delbecq, Shinichi Amaha, Jun Yoneda, Akito Noiri, Retsu Sugawara, Tetsuo Kodera, Shunri Oda, Seigo Tarucha. Single-electron spin resonance in a Si/SiGe double quantum dot with a micromagnet, APS March Meeting 2015, Vol. 60, No. 1, 2015.
• S. Oda. Silicon quantum dots for future electronics and photonics, Workshop on Advancement of Group IV Nanostructures Nanophotonics and Nanoelectronics, Nov. 2014.
• S. Oda. Silicon quantum dot devices for future electronics, The 4th International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, Oct. 2014.
• S. Oda. Change the future through the strong collaborations among our society, Solid State Devices and Materials Conference, Sept. 2014.
• Keiki Fukumoto, Yuuki Yamada, Takashi Matsuki, Ken Onda, Tomohiro Noguchi, Raisei Mizokuchi, Shunri Oda, Shin-ya Koshihara. Visualization of ultrafast electron dynamics using time-resolved photoemission electron microscopy, International Conference on Ultrafest Phenomena, July 2014.
• R. Mizokuchi, T. Kodera, K. Horibe, S. Oda. Perpendicular Magnetic Field Dependence of Triangular Triple Silicon Quantum Dot System, The 2014 IEEE Silicon Nanoelectronics Workshop (SNW2014), June 2014.
• T. Ferrus, A. Rossi, T. Kodera, T. Kambara, S. Oda, D.A. Williams. Manipulation of Silicon Quantum Dots and Isolated Structures using GHz Photons, The 2014 IEEE Silicon Nanoelectronics Workshop (SNW2014), June 2014.
• T. Kodera, K. Yamada, K. Horibe, T. Kambara, S. Oda. Fabrication and characterization of silicon double quantum dots in n-MOS and p-MOS structures, M52, International Conference on Quantum Dots (QD 2014), May 2014.
• S. Oda. Silicon quantum dot devices for future electronics, 29th International Conference on Microelectronics, May 2014.
• Yi Ro, Tetsuo. Kodera, kousuke Horibe, Shunri Oda. Fabrication of Si quantum dots using SF6 dry etching technique, International Conference on Quantum Dots (QD 2014), May 2014.
• T. Ferrus, A. Rossi, T. Kodera, T. Kambara, S. Das, T-Y. Yang, S. Oda, D. A. Williams. Manipulating quantum states with GHz photons in silicon quantum dots and isolated structures, International Conference on Quantum Dots (QD 2014), May 2014.
• Ayse Seyhan, Keiki Fukumoto, Yuuki Yamada, Takashi Matsuki, Ken Onda, Shin-ya Koshihara, Yoshifumi Nakamine, Kazufumi Ikemoto, Kengo Funaki, Shunri Oda. Direct Imaging of Carrier Dynamics in Si Nanocrystals by Using Femtosecond Time-Resolved Photoemission Electron Microscopy, Materials Research Society, Apr. 2014.
• S. Oda. Si quantum dots and Si/Ge nanowires for future electronics and photonics, International Conference on Metamaterials and Nanophysics, Apr. 2014.
• A. Andreev, T. Ferrus, S. Das, T. Yang, S. Ihara, D. Williams, A. Andreev, T. Ferrus, S. Das, T. Yang, T. Kodera, S. Ihara, K. Horibe, S. Oda, D. Williams. Charge Manipulations in Si-Based Quantum Dot Qubit Devices with Single Electron Transistors: Theory and Experiment, 2014 International Conference on Solid State Devices and Materials (SSDM 2014), 2014.
• T. Kodera, T. Kambara, K. Yamada, K. Horibe, Y. Arakawa, S. Oda. Silicon double quantum dots in metal-oxide-semiconductor structures, International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013), Dec. 2013.
• Marolop Simanullang, Kouichi Usami, Tomohiro Noguchi, Akhmadi Surawijaya, Tetsuo Kodera, Yukio Kawano, Shunri Oda. Surface passivation of germanium nanowires using Al2O3 and HfO2 deposited via atomic layer deposition (ALD) technique, 26th International Microprocesses and Nanotechnology Conference, Nov. 2013.
• S. Oda. Silicon Quantum Dot Devices for Future Electron Devices, IEEE NMDC 2013, Oct. 2013.
• S. Oda. Silicon Quantum Dots for Future Nanoelectronics, International Semiconductor Conference Dresden - Grenoble, Sept. 2013.
• Aya Shindome, Tsunaki Takahashi, Shunri Oda, Ken Uchida. Experimental Study on SET/RESET Conditions for Graphene ReRAM, Solid State Devices and Materials Conference, Sept. 2013.
• J.Kamioka, T.Kodera, T.Obata, K.Takeda, W.M.Akhtar, S.Tarucha, S.Oda. Reduction of Charge Noise in Dual-Gate Si/SiGe Quantum Point Contact, Solid State Devices and Materials Conference, Sept. 2013.
• K.Ikemoto, Y.Nakamine, Y.Kawano, S.Oda. In-Situ Monitoring of Silicon Nanocrystal Deposition with Pulsed SiH₄ Supply by Optical Emission Spectroscopy of Ar Plasma, Solid State Devices and Materials Conference, Sept. 2013.
• K. Horibe, T. Kodera, S. Oda. Direct measurement of the valley splitting in a few-electron silicon quantum dot using charge sensor source-drain bias spectroscopy, EP2DS-20/MSS-16, ThP65, July 2013.
• T. Kodera, K. Horibe, Y. Arakawa, S. Oda. Few-electron silicon single and double quantum dots fabricated in a metal-oxide-semiconductor structure, EP2DS-20/MSS-16, ThP67, July 2013.
• T. Obata, K. Takeda, J. Kamioka, T. Kodera, W.M. Akhtar, K. Sawano, S. Oda. Charge-Noise-Free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer” the 12th Asia Pacific Physics Conference (APPC12), the 12th Asia Pacific Physics Conference (APPC12), July 2013.
• T. Kodera, K. Horibe, T. Kambara, T. Sawada, K. Uchida, Y. Arakawa, S. Oda. Fabrication and characterization of silicon quantum dots toward spin-based quantum information devices, Internatilnal Workshop on silicon Quantum Electronics, Feb. 2013.
• Akhmadi Surawijaya, Tetsuo Kodera, Yukio Kawano, Shunri Oda. High Density Vertical Silicon Nanowires for Photodetector Applications, IEEE EDS WIMNACT 37: Future Trend of Nanodevices and Photonics, Feb. 2013.
• T. Kambara, T. Kodera, S. Oda. Multifunctional lithographically-defined Si quantum dots for spin qubits, Internatilnal Workshop on silicon Quantum Electronics, Feb. 2013.
• T. Kodera, T. Sawada, K. Horibe, T. Ferrus, D. Williams, M. Hatano, S. Oda. Top-down and bottom-up silicon quantum dots for qubit application, Quantum Dot Day 2013, Jan. 2013.
• R. Mizokuchi, T. Kodera, K. Horibe, Y. Kawano, Y. Arakawa, S. Oda. Observation of electron transitions in triple quantum dot by using charge sensor, IEEE EDS WIMNACT-37, P-7, 2013.
• Satoshi Ihara, Tetsuo Kodera, Kosuke Horibe, Yukio Kawano, Ken Uchida, Shunri Oda. Demonstration of large charging energy in quantum dots fabricated on ultrathin SOI, IEEE EDS WIMNACT-37, P-8, 2013.
• Tomohiro Kambara, Tetsuo Kodera, Yukio Kawano, Yasuhiko Arakawa, Shunri Oda. Micro magnets on lithographically-defined Si double quantum dots for electron spin resonance, IEEE EDS WIMNACT-37, P-9, 2013.
• S. Oda. NeoSilicon based nanoelectromechanical information devices, ICMAT 2013, 2013.
• S. Oda. NeoSilicon based nanoelectromechanical information devices, CFAED Seminar, TU Dresden, 2013.
• Daichi Suzuki, Shunri Oda, Yukio Kawano. Gate-voltage tunable terahertz detection by a GaAs/AlGaAs quantum device, IRMMW-THz 2012, 2013.
• S. Oda. NeoSilicon based nanoelectromechanical information devices, ICEVENT 2013, 2013.
• Tomohiro Noguchi, Tetsuo Kodera, Marolop Simanullang, Akhmadi Surawijaya, Koichi Usami, Yukio Kawano, Shunri Oda. Fabrication and characterization of bottom-up Si Nanowire, IEEE EDS WIMNACT-37, 2013.
• Tomoya Shoji, Tetsuo Kodera, Tomohiro Noguchi, Kouichi Usami, Yukio Kawano, Shunri Oda. Fabrication of Ge/Si core/shell nanowires using size controlled Au nanoparticles as Vapor-Liquid-Solid growth catalysts, IEEE EDS WIMNACT-37, P-11, 2013.
• Daichi Suzuki, Shunri Oda, Yukio Kawano. Terahertz spectroscopic signal modulation by the gate voltage with a GaAs/AlGaAs field-effect transistor, IEEE EDS WIMNACT-37, P-12, 2013.
• S. Oda. Silicon Quantum Dot Devices for Future Electron Devices, IEEE NMDC 2013, 2013.
• Yuuki Yamada, Takashi Matsuki, Keiki Fukumoto, Ken Onda, Kazufumi Ikemoto, Kengo Funaki, Ayse Seyhan, Shunri Oda, Shin-ya Koshihara. Imaging of the photo-carrier dynamics in a semiconductor by time-resolved photoemission electron microscopy, International School and Symposium on Molecular Materials (ISSMM2013), 2013.
• Nobuhiro Kondo, Shinya Ishii, Daichi Suzuki, Takayoshi Kuga, Shunri Oda, Yukio Kawano, Hiromichi Hoshina. Terahertz camera imaging of crystalline polyhydroxybutyrates, IEEE EDS WIMNACT-37, P-13, 2013.
• Takayoshi Kuga, Luca Crespi, Jun Kamioka, Daichi Suzuki, Tetsuo Kodera, Shunri Oda, Yukio Kawano. Terahertz detection with antenna-coupled heavily P-doped Si quantum dots, IEEE EDS, WIMNACT-37, P-14, 2013.
• Teruyuki Ohashi, Shunri Oda, Ken Uchida. Impact of Deformation Potential Increase at Si/SiO2 Interfaces on Stress-Induced Electron Mobility Enhancement in MOSFET, IEEE EDS WIMNACT-37, P-15, 2013.
• A. Boudraa, A. Seyhan, Y. Nakamine, Y. Ogawa, F. Minami, Y. Kawano, S. Oda. Surface Plasmon Enhanced Light Emission from Silicon Nanocrystals, IEEE EDS WIMNACT-37, P-2, 2013.
• Jun Kamioka, Tetsuo Kodera, Toshiaki Obata, Kenta Takeda, Waseem. M. Akhtar, Seigo Tarucha, Shunri Oda. Fabrication of MOS structure gate-defined Si/SiGe quantum dot device, IEEE EDS WIMNACT-37, P-3, 2013.
• Ko Yamada, Tetsuo Kodera, Tomohiro Kambara, Yukio Kawano, Shunri Oda. Observation of Few-Hole Regime throughp-channel Si Double Quantum Dots, IEEE EDS WIMNACT-37, P-4, 2013.
• K. Horibe, T. Kodera, T. Kambara, Y. Kawano, S. Oda. Two-electron silicon double quantum dots fabricated for spin-based qubit application, IEEE EDS WIMNACT-37, P-5, 2013.
• Marolop Simanullang, T. Noguchi, Akhmadi Surawijaya, Koichi Usami, Tetsuo Kodera, Yukio Kawano, Shunri Oda. Synthesis of Ge nanowires far below AuGe eutectic temperature, their characterisation and device fabrication, IEEE EDS WIMNACT-37, P-6, 2013.
• T. Kodera, T. Sawada, S. Oda. Transport properties of a single nanocrystalline silicon quantum dot between nanogap electrodes, 2012 Workshop on Innovative Nanoscale Devices and Systems (WINDS 2012), Dec. 2012.
• Marolop Simanullang, Tomohiro. Noguchi, Akhmadi Surawijaya, Koichi Usami, Tetsuo Kodera, Yukio Kawano, Shunri. Oda. Modulation of germanium nanowire diameter by controlling the growth temperature for device application, MRS Fall meeting & Exhibit, Nov. 2012.
• T. Ohashi, T. Takahashi, T. Kodera, S. Oda, K. Uchida. Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms, 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Sept. 2012.
• K. Takeda, Y. Fukuoka, T. Obata, J. Sailer, A. Wild, T. Kodera, K. Sawano, S. Oda, D. Bougeard, G. Abstreiter, S. Tarucha, Y Shiraki. Charge noise characterization and reduction in Si/SiGe quantum devices, 31st International Conference on the Physics of Semiconductor (ICPS2012), Aug. 2012.
• T. Ferrus, A. Rossi, T. Kodera, T. Kambara, W. Lin, S. Oda, D. Williams. Microwave effects on silicon quantum dots, 31st International Conference on the Physics of Semiconductor (ICPS2012), July 2012.
• SHUNRI ODA. Silicon quantum dots devices, IMRC 2012, June 2012.
• SHUNRI ODA. NeoSilicon based nanoelectromechanical information devices, 28th International Conference on Microelectronics, June 2012.
• SHUNRI ODA. NeoSilicon based nanoelectromechanical information devices, MPA 2012 – 6th Int. Meeting on Developments in Materials, Processes and Applications of Emerging Technologies, June 2012.
• Yoshifumi Nakamine, Jannatul Ferdous Susoma, Ran Zheng, Nobuhiro Kondo, Mohammad R. T. Mofrad, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Yukio Kawano, Ken Uchida, Mutsuko Hatano, Ryoichi Ishihara, Shunri Oda. Electrical and Optical Properties of Silicon Nanocrystals Prepared by Very High Frequency Plasma Deposition System, 8th International Nanotechnology Conference, May 2012.
• Marolop Simanullang, Ayse Seyhan, Koichi Usami, Tetsuo Kodera, Yukio Kawano, Shunri Oda. Fabrication and characterization of Ge nanowires prepared at low temperatures by vapour-liquid-solid chemical vapour deposition, 8th International Nanotechnology Conference, May 2012.
• Tetsuo Kodera, kousuke Horibe, Tomohiro Kambara, Thierry Ferrus, Alessandro Rossi, Ken Uchida, David A. Williams, Yasuhiko Arakawa, Shunri Oda. Silicon quantum dot devices toward electron spin quantum bits, 8th International Nanotechnology Conference, May 2012.
• Marolop Simanullang, Ayse Seyhan, Koichi Usami, Tetsuo Kodera, Yukio Kawano, Shunri Oda. Low-temperature growth of Ge nanowires by vapor-liquid-solid chemical vapor deposition, The Electrochemical Society, May 2012.  公式リンク  
  
• Shunri Oda, Shaoyun Huang. Silicon nanocrystal memory, Materials Research Society, Apr. 2012.
• Ian Robertson, Yasuko Yanagida, Shunri Oda. Manifesting a 2D Layer of DNA Origami Tiles Using Base-Pair Shape Recognition, IEEE NEMS 2012, W2D-3L, Mar. 2012.
• Teruyuki Ohashi, Shunri Oda, Ken Uchida. Physical Mechanism of Enhanced Uniaxial Stress Effect on Carrier Mobility in ETSOI MOSFETs, ECS Transactions, Vol. 50 (9), pp. 171-174, 2012.
• Jannatul Susoma, Nakamine Yoshifumi, kouichi usami, Tetsuo Kodera, Yukio Kawano, Shunri Oda. Scaling of Channel Length for Highly Conductive Silicon Nanocrystal Films, Solid State Devices and Materials Conference, 2012.
• Yamada Ko, Kodera Tetsuo, Tomohiro Kambara, Kawano Yukio, Oda Shunri. Fabrication and Characterization of p-Channel Si Double-Quantum-Dot Structures, Solid State Devices and Materials Conference, 2012.
• Luca Crespi, Tetsuo Kodera, Shunri Oda, Yukio Kawano. Terahertz Radiation Detection through a Micro-Scale Antenna and a Silicon-Based Quantum Dot, IRMMW-THz 2012, 2012.
• Kambara Tomohiro, Kodera Tetsuo, Oda Shunri. Dual Function of Charge Sensor: Charge Sensing and Gating, Solid State Devices and Materials Conference, 2012.
• T. Kodera, Y. Fukuoka, SHUNRI ODA, K. Takeda, T. Obata, K. Yoshida, K. Sawano. Fabrication and characterization of Si/SiGe quantum dots with capping gate, IEEE Silicon Nanoelectronics Workshop, 2012.
• R. Mizokuchi, T. Kodera, K. Horibe, Y. Kawano, SHUNRI ODA. Charge sensing of a Si triple quantum dot system using single electron transistors, IEEE Silicon Nanoelectronics Workshop, 2012.
• T. Ferrus, A. Rossi, T. Kodera, T. Kambara, W. Lin, S. Oda, D.A. Williams. Microwave manipulation of electrons in silicon quantum dots, IEEE Silicon Nanoelectronics Workshop, 2012.
• J.Kamioka, T. Kodera, K. Horibe, Y. Kawano, SHUNRI ODA. Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot, IEEE Silicon Nanoelectronics Workshop, 2012.
• N. Beppu, T. Takahashi, S Oda, K. Uchida. Experimental Study of Self-Heating Effect (SHE) in SOI MOSFETs: Accurate Understanding of Temperatures During AC Conductance Measurement, Proposals of 2ω Method and Modified Pulsed IV, IEDM 2012, pp. 641-644, 2012.
• T. Ohashi, T. Takahashi, N. Beppu, S. Oda, K. Uchida. Experimental Evidence of Increased Deformation Potential at MOS Interface and its Impact on Characteristics of ETSOI FETs, IEDM2011, No. 16.4, Dec. 2011.
• T. Takahashi, K.Chen, N.Beppu, S. Oda, K. Uchida. Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability, IEDM2011, 34.6, Dec. 2011.
• S. Oda. NeoSilicon Based Nano-electromechanical Information Devices, International Conference on Theoretical and Applied Physics, CN-II I3, Dec. 2011.
• S. Oda. NeoSilicon Based Nano-electromechanical Information Devices, International Workshop on Group IV Nano-materials and Advanced Devices, Nov. 2011.
• S. Oda. NeoSilicon Based Nano-electromechanical Devices, THE 3rd INTERNATIONAL WORKSHOP ON NANOTECHNOLOGY AND APPLICATION - IWNA 2011, NFT-288-I, Nov. 2011.
• Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, Yoshichika Otani, Tetsuo Kodera, Naoki Fukata, Koji Ishibashi, Shunri Oda. Low-Temperature Magnetoresistance Studies of Silicon Nanowires with Permalloy Leads, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-4, Oct. 2011.
• Teruyuki Ohashi, Naotoshi Kadotani, Tsunaki Takahashi, Shunri Oda, Ken Uchida. Mechanisms of electron mobility enhancement in junctionless SOI MOSFETs, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-15, Oct. 2011.
• Tsunaki Takahashi, Tetsuo Kodera, Shunri Oda, Ken Uchida. Direct Observation of Subband Structures in (110) Si pMOSFETs under High Magnetic Field and Its Impact on Hole Transport, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-14, Oct. 2011.
• T. Kodera, K. Horibe, W. Lin, T. Kambara, T. Ferrus, A. Rossi, K. Uchida, D. A. Williams, Y. Arakawa, S. Oda. Development of silicon quantum dot devices toward spin quantum bits, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-12, Oct. 2011.
• K. Horibe, T. Kodera, T. Kambara, K. Uchida, S. Oda. Fabrication of few-electron silicon quantum dot devices based on an SOI substrate with a top gate cintact, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-11, Oct. 2011.
• Y. Fukuoka, T. Kodera, K. Takeda, T. Obata, K. Yoshida, T. Otsuka, K. Sawano, K Uchida, Y. Shiraki, S. Tarucha, S. Oda. Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-10, Oct. 2011.
• Tomotaka Sawada, Tetsuo Kodera, Yuki Kawano, Mutsuko Hatano, Shunri Oda. Electron transport in a single silicon nanocrystal between nanogap electrodes, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-9, Oct. 2011.
• Ken Someno, Kouichi Usami, Tetsuo Kodera, Yukio Kawano, Mutsuko Hatano, Shunri Oda. Photoluminescence of Nanocrystalline Silicon Quantum Dots prepared by VHF Plasma, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-8, Oct. 2011.
• Ayse Seyhan, Yoshi Ogawa, Marolop Simanullang, Shunri Oda. Photoluminescence and Raman studies of Ge nanowires grown on Si (100) and (111) substrates, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-7, Oct. 2011.
• Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda. Synthesis of small-diameter Ge NW at low temperature for electron device application, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-6, Oct. 2011.
• Tomohiro Kambara, Tetsuo Kodera, Thierry Ferrus, Alessandro Rossi, kousuke Horibe, Yasuhiko Arakawa, David Williams, Shunri Oda. Charge detection techniques in Si double quantum dots, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-5, Oct. 2011.
• Yoshifumi Nakamine, Ken Someno, Hiroki Nikaido, Masahiro Kouge, Tetsuo Kodera, Yukio Kawano, Ken Uchida, Mutsuko Hatano, Shunri Oda. Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-3, Oct. 2011.
• Muhammad Amin Sulthoni, Tetsuo Kodera, Yukio Kawano, Shunri Oda. Transport Simulation of an Electrostatically Defined Silicon Double Quantum Dot Device, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-2, Oct. 2011.
• Ian C. Robertson, Tetsuo Kodera, Yasuko Yanagida, Ken Uchida, Shunri Oda. Utilizing 2D figures of DNA polymer for self-assembly applications on silicon platform, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-1, Oct. 2011.
• S. Oda. NeoSilicon Based Nano-electromechanical Information Devices, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 5-3, Oct. 2011.
• Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda. Microscopic Study of the Germanium Nanowires grown at Low-temperatures by Au-catalysed Chemical Vapour Deposition, 24th International Microprocesses and Nanotechnology Conference, 27B-8-4, Oct. 2011.
• J. Tarun, S. Huang, Y. Fukuma, H.dzuchi, Y. Otani, T. Kodera, N.Fukata, K. Ishibashi, S. Oda. Influence of Backgate Voltage on Spin Accumulation in a Silicon Nanowire Spin Valve, MNC 2011, 26P-7-143L, Oct. 2011.
• M. A. Sulthoni, T. Kodera, Y. Kawano, S. Oda. A Multi-purpose Electrostatically Defi ned Silicon Quantum Dot Structure, Solid State Devices and Materials Conference, Extended Abstracts, P-9-7, Sept. 2011.
• T. Kodera, K. Horibe, T. Kambara, G. Yamahata, K. Uchida, Y. Arakawa, S. Oda. Observation of few-electron regime and suppression of inter-dot tunneling in silicon quantum dots, the International Conference on Quantum Information Processing and Communication 2011 (QIPC 2011), Sept. 2011.
• A. Rossi, T. Ferrus, T. Kodera, S. Oda, D. A. Williams. Charge sensing in silicon quantum dots for quantum computation, the International Conference on Quantum Information Processing and Communication 2011 (QIPC 2011), Sept. 2011.
• Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda. Germanium nanowires with 3-nm-diameter prepared by low temperature (260oC) vapour-liquid-solid chemical vapour deposition, EuroCVD 18, 9-5, Sept. 2011.
• T. Kodera, K. Horibe, H. Hayashi, Tomohiro Kambara, K. Uchida, Y. Arakawa, S. Oda. Triangularly-positioned silicon triple quantum dots, the 15th International Conference on Modulated Semiconductor Structures (MSS 15), Tu-P-119, Aug. 2011.
• Yoshifumi Nakamine, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Shunri Oda. Electrical Property of Nano-Crystalline Silicon Thin-Films Prepared by Very High Frequency Plasma Deposition System, 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), 4C4-4, Aug. 2011.
• Ken Someno, Kouichi Usami, Tetsuo Kodera, Mutsuko Hatano, Shunri Oda. Photoluminescence of Nanocrystalline ICANS-24Silicon Quantum Dots Prepared by VHF Plasma Cell, 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), 2C1-1, Aug. 2011.
• K. Horibe, T. Kodera, T. Kambara, K. Uchida, S. Oda. Observation of single-electron regime in a silicon quantum dot by a single-electron transistor, the 19th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS 19), Tu-P-49, July 2011.
• Y. Fukuoka, T. Kodera, T. Otsuka, K. Takeda, T. Obata, K. Yoshida, K. Sawano, K Uchida, Y. Shiraki, S. Tarucha, S. Oda. Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact, IEEE Silicon Nanoelectronics Workshop, No. 5-17, June 2011.
• Yoshifumi Nakamine, Mohammad R. T. Mofrad, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Ryoichi Ishihara, Shunri Oda. Electrical Property of Nano-Crystalline Silicon Thin-Films Transistors Prepared by Very High Frequency Plasma Deposition System, IEEE Silicon Nanoelectronics Workshop, No. 5-6, June 2011.
• Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, Shunri Oda. Simulation Study of Electrostatically Defined Silicon Double Quantum Dot Device, IEEE Silicon Nanoelectronics Workshop, No. 5-12, June 2011.
• Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, YoshiChika Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda. Magnetoresistance of Cobalt-Contacted Silicon Nanowire, IEEE Silicon Nanoelectronics Workshop, No. 3-5, June 2011.
• S. Oda. NeoSilicon Based Nano-electromechanical Devices, 18th International Conference on Mixed Design of Integrated Circuits and Systems, June 2011.
• T. Ferrus, A. Rossi, W. Lin, D. A. Williams, T. Kodera, S. Oda. An apparent metal-insulator transition in a phosphorous doped silicon single electron transistor, IEEE Silicon Nanoelectronics Workshop, No. 5-16, June 2011.
• Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda. Synthesis of small-diameter Ge NW at low temperature for electron device application, 7th International Nanotechnology Conference on Communication and Cooperation (INC7), May 2011.
• T. Kodera, K. Horibe, W. Lin, T. Kambara, T. Ferrus, A. Rossi, K. Uchida, D. A. Williams, Y. Arakawa, S. Oda. Charge Detection in Silicon Quantum Dots Coupled in Parallel, IEEE Silicon Nanoelectronics Workshop, No. 6-3, May 2011.
• Tetsuo Kodera, Kousuke Horibe, Tomohiro Kambara, Gento Yamahata, Ken Uchida, Yasuhiko Arakawa, Shunri Oda. Observation of Pauli-Spin Blockade and Single-Electron Regime in Silicon Coupled Quantum Dots, 7th International Nanotechnology Conference on Communication and Cooperation (INC7), May 2011.
• Yoshifumi Nakamine, Ken Someno, Hiroki Nikaido, Masahiro Kouge, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Shunri Oda. Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application, 7th International Nanotechnology Conference on Communication and Cooperation (INC7), May 2011.
• Y. Nakamine, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Ken Uchida, Ryoichi Ishihara, Shunri Oda. Laser Annealing of Silicon Nanocrystals Thin-films Prepared by VHF Plasma Deposition System, Materials Research Society, A9.5, Apr. 2011.
• Ian Robertson, Tetsuo Kodera, Yasuko Yanagida, Ken Uchida, Shunri Oda. Constructing Templates for One-dimensional Nanostructure Uusing DNA Origami, Materials Research Society, LL5.6, Apr. 2011.
• T. Ohashi, T. Takahashi, N. Beppu, S. Oda, K. Uchida. Experimental Evidence of Increased Deformation Potential at MOS Interface and Its Impact on Characteristic of ETSOI FETs, IEDM 2011, pp. 390-393, 2011.
• T. Takahashi, N. Beppu, K. Chen, S. Oda, K. Uchida. Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability, IEDM 2011, pp. 809-812, 2011.
• N. Kadotani, T. Takahashi, K. Chen, T. Kodera, S. Oda, K. Uchida. Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1×1018cm-3, EDM2010, Dec. 2010.
• Jean L. Tarun, Shaoyun Huang, Y. Fukuma, H. Idzuchi, Y. Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda. Spin valve effects in Silicon nanowires, 55th Magnetism and Magnetic Materials Conference (MMM), Nov. 2010.
• Jean L. Tarun, Shaoyun Huang, Y. Fukuma, H. Idzuchi, Y. Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda. Distinct Spin Valve Effects in Silicon Nanowires Measured by Non-local Electrode Configuration, International Microprocesses and Nanotechnology Conference (MNC 2010), Nov. 2010.
• S. Oda. NeoSilicon based nanoelectromechanical information devices, IEEE EDS Minicolloquim on Physics of Electron Devices in Engineering Education, Oct. 2010.
• Berrin Pinar Algul, Tetsuo Kodera, Shunri Oda, Ken Uchida. Study on Device Parameters of Carbon Nanotube FETs to RealizeSteep Subthreshold Slope of less than 60 mV/decade, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Sept. 2010.
• S. Oda. Scaled silicon NEM hybrid devices, Nano-Electro-Mechanical Devices for Integrated Sensing and Switching; Satellite workshop to ESSDERC/ESSCIRC 2010, Sept. 2010.
• Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, Shunri Oda. Preparation of SOI-based Double Quantum Dots Structure Defined by Geometry and Electrostatically, Solid State Devices and Materials Conference, Extended Abstracts, Sept. 2010.
• Tomohiro Kambara, Tetsuo Kodera, Gento Yamahata, Ken Uchida, Shunri Oda. Simulation study of charge modulation in coupled quantum dots in silicon, Solid State Devices and Materials Conference, Extended Abstracts, Sept. 2010.
• S. Oda. Silicon Quantum Dot Devices, Silicon Quantum Dot Devices, Sixteenth School on Condensed Matter Physics, Aug. 2010.
• T. Kodera, G. Yamahata, T. Kambara, K. Uchida, C. M. Marcus, S. Oda. Magnetic field dependence of a leakage current in Pauli-spin blockade regime of silicon double quantum dots, School and conference on Spin-based quantum information processing, Aug. 2010.
• Tetsuo Kodera, Gento Yamahata, Tomohiro Kambara, Kousuke Horibe, Thierry Ferrus, David Williams, Yasuhiko Arakawa, Shunri Oda. Realization of lithographically-defined silicon quantum dots without unintentional localized potentials, 30th International Conference on Physics of Semiconductors (ICPS-30), July 2010.
• Ian C. Robertson, Ken Uchida, Shunri Oda. Artificial Membrane Constructed by one-dimensional Nanostructure using DNA Origami, 7th International Conference – NN10, July 2010.
• J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, H. Mizuta. Single-electron energy dissipation processes mediated by slab mode phonons observed for suspended silicon double quantum dots, IEEE Silicon Nanoelectronics Workshop, June 2010.
• T. Kodera, G. Yamahata, T. Kambara, K. Horibe, K. Uchida, C. M. Marcus, S. Oda. Spin-related tunneling in lithographically-defined silicon quantum dots, , 2010 IEEE Silicon Nanoelectronics Workshop, June 2010.
• H. Armini, M. Carli, J. Snauwaert, V. Cherman, I. De Wolf, V. Simons, A. Maestre Caro, J. Moonens, P. Neutens, K. Arstila, J. Ogi, S. Oda, Y. Tsuchiya. Nanoscale Selective Silicon Nanowires Surface Functionalization for Sensing Applications, Materials Research Society, Apr. 2010.
• Ian C. Robertson, K. Uchida, S. Oda. Artificial membrane constructed by one-dimensional nanostructure using DNA origami, Materials Research Society, Apr. 2010.
• T. Kodera, K. Ono, N. Kumagai, T. Nakaoka, S. Tarucha, S. Oda, Y. Arakawa. Resonant tunnelling between a self-assembled InAs quantum dot and an electrically-defined InGaAs quantum dot, the 6th International Conference on Semiconductor Quantum Dots (QD2010), Apr. 2010.
• T. Kodera, K. Ono, N. Kumagai, T. Nakaoka, S. Tarucha, S. Oda, Y. Arakawa, N. Kumagai. Magnetic field dependence of resonant tunneling between an InAs quantum dot and an InGaAs quantum dot, , International Symposium on Quantum Nanostructures and Spin-related Phenomena (QNSP2010), Mar. 2010.
• G. Yamahata, T. Kodera, T. Kambara, K. Uchida, C. M. Marcus, S. Oda. Pauli Spin Blockade in a Lithographycally-defined Silicon Double Quantum Dot, QNSP2010, Mar. 2010.
• SHUNRI ODA. VHF Plasma process for size-controlled Si nanodot fabrication, 2010 International Symposium on Atom -scale Silicon Hybrid Nanotechnologies for, Mar. 2010.
• Xin Zhou, Ken Uchida, Shunri Oda. Current fluctuations in three-dimensionally stacked Si nanorystals thin films, Applied Physics Letters, Vol. 96, pp. 092112 (3 pages), Mar. 2010.
• H. Mizuta, Y. Tsuchiya, S. Oda. Hybrid Silicon Nanoelectromechanical Devices: Physics and Applications, UK-Japan Workshop on Novel Phenomena and Technologies in Semiconductor Nanostructures, Jan. 2010.
• J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, H. Mizuta. Inelastic single-electron tunneling assisted by confined phonons observed for suspended silicon double quantum dots, IOP Quantum Dot Meeting (QDCAM2010), Jan. 2010.
• T. Takahashi, G. Yamahata, J. Ogi, T. Kodera, S. Oda, K. Uchida. Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field: Impact of Energy Split Between Bands and Effective Masses on Hole Mobility, IEDM2009, Dec. 2009.
• SHUNRI ODA. Silicon quantum dots devices, International workshop on Physics, International workshop on Physics, Delhi,招待講演, Dec. 2009.
• 小田俊理. Silicon quantum dots devices, IEEE EDS Minicolloquim on the Past and Future of Integrated Circuits, Nov. 2009.
• SHUNRI ODA. Silicon quantum dots devices, IEEE EDS Minicolloquim on the Past and Future of Integrated Circuits, Nov. 2009.
• J. Ogi, T Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, Hiroshi Mizuta. Electron-phonon interaction in suspended Si double quantum dots, International Microprocesses and Nanotechnology Conference (MNC 2009), Nov. 2009.
• T. Kodera, G. Yamahata, T. Kambara, T. Ferrus, D. Williams, S. Oda, Y. Arakawa. Improvements of transport properties in silicon quantum dots, International Symposium on Quantum Nanophotonics and Nanoelectronics (ISQNN 2009), pp. 76, Nov. 2009.
• J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, H. Mizuta, S. Oda. Suspended quantum dot devices for sensor or quantum bit applications, G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists, Oct. 2009.
• SHUNRI ODA. Silicon quantum dots and related devices, G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists, Oct. 2009.
• T. Nagami, Y. Tsuchiya, K. Uchida, hiroshi mizuta, S. Oda. Scaling Analysis of NEMS Memory Devices, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Liang He, kouichi usami, Ken Uchida, Shunri Oda. Preparation and characterization of P-doped Ge nanowires by VLS-CVD, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• D. Hippo, Y. Nakamine, K. Uchida, S. Oda. Thermotherapy for Cancer Using Silicon Nanocrystals, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Tetsuya Ishikawa, Hiroki Nikaido, kouichi usami, Ken Uchida, Shunri Oda. Formation of two-dimensional array of Si nanocrystals using nano Si ink, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Xin Zhou, Ken Uchida, Shunri Oda. Carrier transport in ensemble of Si nanocrystals prepared by VHF plasma process,, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Chao Yan, Ken Uchida, Shunri Oda. Design Optimization of MEMS(NEMS) Resonator by 3-D Anisotropic Thermoelastic Modeling, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Y.Nakamine, T.Kodera, K.Uchida, Shunri Oda. Phosphorous-Doping in Silicon Nanocrystals by using VHF Plasma, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• SHUNRI ODA. Performance Projections for Nanomechanical Memory, SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies: Processes, Devices, and Architectures, Oct. 2009.
• Berrin Pinar Algul, Ken Uchida, Shunri Oda. Modeling of Band-to-Band Tunneling in MOS Structures, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Y. Nakamine, T. Kodera, K. Uchida, S. Oda. Removal of Surface Oxide Layer from Silicon Nanocrystals by HF Vapor Etching, 22nd Int. Microprocess and Nanotechnology Conference (MNC 2009), Oct. 2009.
• Jean L. Tarun, Shaoyun Huang, Ken Uchida, Naoki Fukata, Koji Ishibashi, Shunri Oda. Transport Properties of Silicon Nanowire with Ferromagnetic Leads, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Ian C. Robertson, Ken Uchida, Shunri Oda. Artificial Membrane Interfacial Layers via 1D nanostructures for Bio-Sensors, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• T. Kodera, G. Yamahata, T. Kambara, Thierry Ferrus, D. A. Williams, K. Uchida, Yasuhiko Arakawa, S. Oda. Fabrication and characterization of silicon double quantum dots towards spin qubits, G-COE PICE International Symposium on Silicon Nano Devices in 2030:, Oct. 2009.
• Gento Yamahata, Tetsuo Kodera, Hiroshi Mizuta, Ken Uchida, Shunri Oda. Electron transport through coupled Si quantum dots toward quantum information devices, G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists, Oct. 2009.
• T. Ishikawa, H. Nikaido, Kouichi Usami, K. Uchida, S. Oda. Fabrication of nano Si ink and two-dimensionally assembled Si nanocrystals, 35th International Conference on Micro & Nano Engineering, Sept. 2009.
• H. Mizuta, M. A. G-. Ramirez, F. A. Hassani, M. A. Ghiass, Y. Tsuchiya, T. Nagami, B. Pruvost, J. Ogi, S. Sawai, S. Oda, M. Okamoto. Multi-scale Simulation of Hybrid Silicon Nano-electromechanical (NEM) Information Devices, 8th International Conference on Global Research and Education – Inter-Academia, Sept. 2009.
• Zhou, K Uchida, SHUNRI ODA. Characteristics of current oscillations phenomenon in Si nanorystal thin films, 第70回応用物理学会学術講演会, Sept. 2009.
• 二階堂広基, 石川哲也, 内田 建, 小田俊理. Langmuir-Blodgett法によるナノ結晶シリコン量子ドットの集積配列, 第70回応用物理学会学術講演会, Sept. 2009.
• 筆宝大平, 中峯嘉文, 内田 健, 小田俊理. レーザ照射によるナノ結晶シリコンの温度上昇の観測, 第70回応用物理学会学術講演会, Sept. 2009.
• 晏超, 内田 建, 小田俊理. MEMS(NEMS) 共振器設計のための体系的最適化法, 、第70回応用物理学会学術講演会, Sept. 2009.
• 小田俊理. イントロダクトリートーク：ネオシリコン材料の構造制御と新機能, 第70回応用物理学会学術講演会, Sept. 2009.
• Hiroshi Mizuta, M. A. G.-Ramirez, Y. Tsuchiya, T. Nagami, S. Oda. NEM – MOS Co-integration for Fast & Nonvolatile Memory Applications, IEEE-NANO Satellite Workshop on Emerging Non-volatile Memory, July 2009.
• Aditi Goyal, Muhammad A Rafiq, Ken Uchida, Shunri Oda. Parameter Randomness Analysis of Multiple Tunnel Junctions, IEEE Silicon Nanoelectronics Workshop, June 2009.
• Xin Zhou, Ken Uchida, Hiroshi Mizuta, Shunri Oda. Current oscillations observed for sparse Si nanorystal thin films, IEEE Silicon Nanoelectronics Workshop, June 2009.
• J. Ogi, T. Ferrus, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, Hiroshi Mizuta. Study of single-electron transport via suspended double silicon quantum dots, IEEE Silicon Nanoelectronics Workshop, June 2009.
• Xin Zhou, Ken Uchida, Hiroshi Mizuta, Shunri Oda. Lateral conduction of Si nanorystals by thin film transistor structures, IEEE Silicon Nanoelectronics Workshop, June 2009.
• Tomoyuki Kurihara, Yohei Nagahama, Daisuke Kobayshi, Hiroki Niikura, Yoshishige Tsuchiya, Hiroshi Mizuta, Hiroshi Nohira, Ken Uchida, Shunri Oda. Engineering of Heterostructured Tunnel Barrier for Non-Volatile Memory Applications: Potential of Pr-based Heterostructured Barrier as a Tunneling Oxide, IEEE Silicon Nanoelectronics Workshop, June 2009.
• S. Oda. Nano-silicon for novel quantum dot based electronic and photonic devices, EPFL, Apr. 2009.
• S. Oda. NeoSilicon Materials, Materials Research Society, Apr. 2009.
• Chao Yan, Ken Uchida, Shunri Oda. Design Optimization of MEMS(NEMS) Resonator by 3-D Anisotropic Thermoelastic Modeling, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2008.
• Gento. Yamahata, Ken. Uchida, Shunri. Oda, Yoshishige. Tsuchiya, Hiroshi. Mizuta. Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots, Sept. 2008.
• Yoshiyuki Kawata, Shunri Oda, Yoshishige Tsuchiya, Hiroshi Mizuta. Detection of Single-Charge Polarisation in SiliconDouble Quantum Dots by Using Serially-ConnectedMultiple Single-Electron Transistors, ESSDERC2008, Sept. 2008.
• SHUNRI ODA. Silicon quantum dot devices., 26th International Conference on Microelectronics, 26th International Conference on Microelectronics, Nis, Serbia,招待講演, May 2008.
• SHUNRI ODA. NeoSilicon Devices, 22nd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 22), 22nd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 22), Breckenridge,招待講演, Aug. 2007.
• S. Oda, H. Mizuta. Nanocrystalline Silicon Quantum Dot Devices, Electrochemical Society, Electrochemical Society,Denver,招待講演, pp. I1-389, May 2006.
• Satoshi Higashijima, Yasuyoshi Kurokawa, Yoshishige Tsuchiya, Masakuni Okamoto, Hiroshi Mizuta, Shunri Oda. Ab-initio Method of designing artificial quantum bits, The 15th Workshop on Modeling and Simulation of Electron Devices, July 2005.
• Yasuyoshi Kurokawa, Satoshi Higashijima, Yoshishige Tsuchiya, Masakuni Okamoto, Hiroshi Mizuta, Shunri Oda. Atomistic simulation of quantum transport in nanoscale silicon transistors, The 15th Workshop on Modeling and Simulation of Electron Devices, July 2005.
• Satoshi Higashijima, Yasuyoshi Kurokawa, Yoshishige Tsuchiya, Masakuni Okamoto, Hiroshi Mizuta, Shunri Oda. Ab-Initio Calculations of Electronic States in Nano-Crystalline Si Quantum Dots, IEEE Silicon Nanoelectronics Workshop, June 2005.
• SHUNRI ODA. Formation, Characterization and Applications of Nanocrystalline Silicon Quantum Dots Prepared by VHF Plasma Processes, 4th International Conference on the Physics of Dusty Plasmas, 4th International Conference on the Physics of Dusty Plasmas, Orleans,招待講演, June 2005.
• Yasuyoshi Kurokawa, Satoshi Higashijima, Yoshishige Tsuchiya, Masakuni Okamoto, Hiroshi Mizuta, Shunri Oda. Electric States and Quantum Transport in Si Nanorod Transistors, IEEE Silicon Nanoelectronics Workshop, June 2005.
• 東島賢, 黒川康良, 土屋良重, 岡本政邦, 水田博, 小田俊理. Ab-initio calculations of electronic states in Si nanodots and nanorods, 2004 CREST Symposium on "Function Evolution of Materials and Devices based on Electron / Photon Related Phenomena, Sept. 2004.
• S. Oda. Silicon quantum dot devices for future electronics, International Workshop on Advanced Materials and Nanotechnology.

国内会議発表 (査読有り)

• 舩木健伍, 山崎将太郎, 宇佐美浩一, 河野行雄, 野崎智洋, 小田俊理. 表面修飾したシリコンナノ結晶とP3HTの複合体における光伝導特性評価, 第75回応用物理学会秋季学術講演会, Sept. 2014.
• 小田俊理, 内田 建. シリコンナノテクノロジー：１次元、０次元、その先は？, 第70回応用物理学会学術講演会, Sept. 2009.
• 水田 博, 土屋良重, 小田俊理. ナノエレクトロメカニカル構造を有するシリコンナノ機能デバイス, 第70回応用物理学会学術講演会, Sept. 2009.
• 村木太郎, 李 伝波, 増渕和典, 宇佐美浩一, 内田 建, 小田俊理. ラジカル窒化を用いたゲルマニウムナノワイヤデバイスの作製, 第56回応用物理学関係連合講演会, Apr. 2009.

国際会議発表 (査読なし・不明)

• S. Oda. Coupled Quantum Dots on SOI as Highly Integrated Si Qubits, IEDM, Dec. 2016.
• S. Oda. Silicon device technology for intelligent communications, Global Nanotechnology 2016, Dec. 2016.
• Y. Shimamoto, T. Suto, H. Ozawa, M. Hatano, S.Oda, T. Iwasaki. Very Narrow Linewidths in the Fluorescence from Germanium-Vacancy Centers in Nanodiamonds, Materials Research Society Fall Meeting, Nov. 2016.
• T. Kawanago, S. Oda. Self-Assembled Monolayer-Based Gate Dielectrics for MoS2 FETs, 230th ECS Meeting, Oct. 2016.
• Jaime Oscar Tenorio-Pearl, Ernst David Herbschleb, Celestino, Alex Chin Creatore, Shunri Oda. Coherent control of trapped-charge induced resonances in a field-effect transistor, IEEE Silicon Nanoelectronics Workshop, June 2016.
• S. Oda. Quantum dot devices: technology vehicles for nanoscale physics and paths for future applications, ESSDERC, 2016.
• Daichi Suzuki, Shunri Oda, Yukio Kawano. A Wide Band And Flexible Terahertz Detector With Carbon Nanotubes, 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2016.
• Takashi Iguchi, Satoshi Ihara, Shunri Oda, Yukio Kawano. Silicon Terahertz Plasmonic Antenna, 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2016.
• Tetsuo Kodera, Kosuke Horibe, Shunri Oda. Devices Architectures andTechnology for Quantum Computing, 228th ECS Meeting, ECS Transactions, Vol. 69, 10, pp. 3-10, 2015.
• N. Fujimura, T. Kuga, J. M. Lloyd, T. Kodera, S. Oda, Y. Kawano. Nanoscale Imaging by Scattering-type Scanning Near-Field Optical Microscopy with Infrared Light, U.S.-Japan Symposium on Global Scientist Education through Research Partnerships, 2013.
• Takayoshi Kuga, Luca Crespi, Jun Kamioka, Daichi Suzuki, Tetsuo Kodera, Shunri Oda, Yukio Kawano. Terahertz dtection with log-spiral antenna-coupled Si quantum dots, Third International Symposium on Terahertz Nanoscience, 2012.
• Tetsuo Kodera, Tomohiro Kambara, Kousuke Horibe, Gento Yamahata, Ken Uchida, Shunri Oda. Silicon Quantum Dots for Spin-Based Quantum Information Processing, , 2nd Japanese-Russian young scientists conference on nano-materials and nano-technology, Sept. 2010.
• S. Oda. Preparation and Applications of Nanocrystalline Silicon Devices, IEEE TENCON 2006, pp. *, Nov. 2006.
• Y. Tsuchiya, R. Furukawa, T. Suto, H. Mizuta, S. Oda, H. Nohira, T. Maruizumi, Y. Shiraki. Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode, International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF2006), pp. *, Nov. 2006.
• S. Oda, Y. Tsuchiya, H. Mizuta. NeoSilicon: Novel functional materials with controlled interaction between quantum dots, International Topical Workshop "Tera- and Nano-Devices: Physics and Modeling", pp. *, Oct. 2006.
• S. Oda, S. Y. Huang, M. A. Salem, D. Hippo, A. Tanaka, Y. Tsuchiya, H. Mizuta. Nanocrystalline Silicon Quantum Dot Devices, 8th International Conference on Solid-State and Integrated-Circuit Technology D3.3, pp. *, Oct. 2006.
• M. Manoharan, H. Mizuta, S. Oda. Hybrid simulation of the RFSET and its charge sensitivity analysis, Solid State Devices and Materials Conference, Extended Abstracts, pp. P-9-11, Sept. 2006.
• M. A. H. Khalafalla, H. Mizuta, S. Oda, Z. A. K. Durrani. Possible Nonequilibrium Kondo Effect in a Nanocrystalline Silicon Point-Contact Transistor, Solid State Devices and Materials Conference, Extended Abstracts, pp. A-9-2, Sept. 2006.
• Y. Kawata, M. Khalafalla, K. Usami, Y. Tsuchiya, H. Mizuta, S. Oda. Tunnel-coupled double nanocrystalline Si quantum dots integrated into a singleelectron transistor, Solid State Devices and Materials Conference, Extended Abstracts, pp. A-7-5, Sept. 2006.
• S. Oda. Preparation, characterization and application of nanocrystalline silicon quantum dot devices, Rencontres du Vietnam 2006: Nanophysics: from fundamentals to applications, pp. PS3.42, Aug. 2006.
• M. Khalafalla, H. Mizuta, Z. A.K. Durrani, S. Oda. Observation of quantum effects in the electron transport characteristics of a nanocrystalline silicon point contact transistor, International Conference on Physics of Semiconductors, pp. *, July 2006.
• T. Nagami, N.Momo, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, H. Mizuta, S. Oda. Electro-Mechanical simulation of programming/readout characteristics for NEMS memory, IEEE Silicon Nanoelectrinics Workshop, Vol. *, June 2006.
• N. Momo, T. Nagami, S. Matsuda, Y. Tsuchiya, S. Saito, T. Arai, Y. Kimura, T. Shimada, H. Mizuta, S. Oda. Fabrication and characterization of nanoscale suspended floating gates for NEMS memory, IEEE Silicon Nanoelectrinics Workshop, pp. *, June 2006.
• J. Ogi, N. Momo, M.A.H. Khalafalla, Y. Tsuchiya, H. Mizuta, S. Oda. Fabrication and evaluation of Si nanobridge transistor, IEEE Silicon Nanoelectrinics Workshop, pp. *, June 2006.
• B. Pruvost, H. Mizuta, S. Oda. Design and Analysis of Functional NEMS-gate MOSFETs and SETs, IEEE Silicon Nanoelectrinics Workshop, pp. *, June 2006.
• Hea Jeong Cheong, D. Hippo, A. Tanaka, K. Usami, Y. Tsuchiya, H. Mizuta, S. Oda. Visible Electroluminescence from Size-Controlled Silicon Quantum Dots, CLEO/QELS 2006, pp. CTuN4, May 2006.
• D. Hippo, Y. Kawata, Y. Tsuchiya, H. Mizuta, S. Oda, K. Urakawa, N. Koshida. Fabrication of Silicon 3D Photonic Crystal Structures in 100nm Scale Using Double Directional Etchings Method, CLEO/QELS 2006, pp. JTuD47, May 2006.
• S. Oda, H. Mizuta. Charge Storage and Electron/Light Emission Properties of Silicon Nanocrystals, E-MRS Spring Meeting, pp. I2, May 2006.
• Hea-Jeong Cheong, Daihei Hippo, Atsushi Tanaka, Kouichi Usami, Yoshishige Tsuchiya, Hiroshi Mizuta, Shunri Od. Visible Electroluminescence from Size-Controlled Silicon Quantum Dots, CLEO/QELS 2006, May 2006.
• K. Ogawa, K. Tomizawa, Y-T. Tan, My The Doan, Yu Ming Bin, Dim-Lee Kwong, S. Yamada, J. B. Cole, Y. Katayama, H. Mizuta, S. Oda. Broadband Variable Chromatic Dispersion in Photonic-Band Electro-Optic Waveguide, OFC 2006, pp. OThE4, Mar. 2006.
• B. Pruvost, H. Mizuta, S. Oda. Design and Analysis of Functional NEMS-gate MOSFETs and SETs, IEEE Silicon Nanoelectrinics Workshop, Vol. *, 2006.
• S. Oda, H. Mizuta. Nanocrystalline Silicon Quantum Dot Devices, Electrochemical Society, Vol. *, 2006.
• T. Nagami, N. Momo, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, H. Mizuta, S. Oda. Fabrication and characterization of nanoscale suspended floating gates for NEMS memory, IEEE Silicon Nanoelectrinics Workshop, Vol. *, 2006.
• J. Ogi, N. Momo, M.A.H. Khalafalla, Y. Tsuchiya, H. Mizuta, S. Oda. Fabrication and evaluation of Si nanobridge transistor, IEEE Silicon Nanoelectrinics Workshop, Vol. *, 2006.
• K. Ogawa, K. Tomizawa, Y-T. Tan, My The Doan, Yu Ming Bin, Dim-Lee Kwong, S. Yamada, J. B. Cole, Y. Katayama, H. Mizuta, S. Oda. Broadband Variable Chromatic Dispersion in Photonic-Band Electro-Optic Waveguide, OFC 2006, Vol. *, 2006.
• S. Oda, H. Mizuta. Charge Storage and Electron/Light Emission Properties of Silicon Nanocrystals, E-MRS Spring Meeting, Vol. *, 2006.
• Hea Jeong Cheong, D. Hippo, A. Tanaka, K. Usami, Y. Tsuchiya, H. Mizuta, S. Oda. Visible Electroluminescence from Size-Controlled Silicon Quantum Dots, CLEO/QELS 2006, Vol. *, 2006.
• D. Hippo, Y. Kawata, Y. Tsuchiya, H. Mizuta, S. Oda, K. Urakawa, N. Koshida. Fabrication of Silicon 3D Photonic Crystal Structures in 100nm Scale Using Double Directional Etchings Method, CLEO/QELS 2006, Vol. *, 2006.
• S. Higashijima, Y. Kurokawa, Y. Tsuchiya, M. Okamoto, H. Mizuta, S. Oda. Ab-initio method of designing artificial quantum bits, Workshop on Modeling and Simulation of Electron Devices, Vol. *, 2005.
• S. Oda. Nanocrystalline Silicon Quantum Dot Devices, AUN/SEED-Net Field Wise Seminar, Vol. Keynote Presentation, 2005.
• S. Oda. Nanocrystalline Silicon Quantum Dot Devices, International Conference on MEMS and Semiconductor Nanotechnology, Vol. Keynote Address, 2005.
• S. Oda. Nanocrystalline Silicon Quantum Dot Devices, 9th Workshop and IEEE EDS Mini-colloquia on NAnometer CMOS Technology, Vol. 5.3, 2005.
• S. Oda. NeoSilicon: Nanometer scale control of materials in device application, Conference on Future Integrated Systems, Vol. *, 2005.
• A.Tanaka, G.Yamahata, Y.Tsuchiya, H.Mizuta, S.Oda. Formation of Nanocrystalline Silicon Quantum Dot Arrays, 12th International Conference on COMPOSITES/NANO ENGINEERING, Vol. 9a-4, 2005.
• S. Oda. Charge storage in silicon nanocrystals and device application, First International Workshop on Semiconductor Nanocrystals SEMINANO 2005, Vol. *, 2005.
• S. Oda. Nanocrystalline Silicon Quantum Dot Devices, 6th Workshop and IEEE EDS Mini-colloquia on NAnometer CMOS Technology, Vol. 5.3, 2005.
• D. Hippo, Y. Kawata, Y. Tsuchiya, H. Mizuta, S. Oda, K. Urakawa, N. Koshida. A New fabrication process of 3-dimensional full bandgap silicon photonic crystal structures at submicron scale, CLEO Europe EQEC 2005, Vol. CP3-7-THU, 2005.
• D. Hippo, H-J. Chong, Y. Kawata, A. Tanaka, Y. Tsuchiya, H. Mizuta, S. Oda, K. Urakawa, N. Koshida. A new design of nanocrystalline silicon optical devices based on 3-dimensional photonic crystal structures, 2nd International Conference on Group IV Photonics, Vol. P22, 2005.
• A. Surawijaya1, H. Mizuta, S. Oda. Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot, Solid State Devices and Materials Conference, Extended Abstracts, Vol. G-2-9L, 2005.
• A.Tanaka, G.Yamahata, Y.Tsuchiya, K.Usami, H.Mizuta, S.Oda. Assembly of Nanocrystalline Silicon Quantum Dots Based on a Colloidal Solution Method, 5th IEEE Conference on Nanotechnology, Vol. TH-A3-5, 2005.
• S-Y. Huang, H. Mizuta, S. Oda. Charge Operations of Nitrided Nanocrystalline Silicon Dot Memory Devices, China International Conference on Nanoscience and Technology, Vol. 3O-09-114, 2005.
• Y. Kurokawa, S. Higashijima, Y. Tsuchiya, M. Okamoto, H. Mizuta, S. Oda. Atomistic simulation of quantum transport in nanoscale silicon transistors, Workshop on Modeling and Simulation of Electron Devices, Vol. *, 2005.
• Y. Kurokawa, S. Higashijima, Y. Tsuchiya, M. Okamoto, H. Mizuta, S. Oda. Electronic States and Quantum Transport in Si Nanorod Transistors, IEEE Silicon Nanoelectrinics Workshop, Vol. 9-17, 2005.
• S. Higashijima, Y. Kurokawa, Y. Tsuchiya, M. Okamoto, H. Mizuta, S. Oda. Ab-Initio Calculations of Electronic States in Nano-Crystalline Si Quantam Dots, IEEE Silicon Nanoelectrinics Workshop, Vol. 9-16, 2005.
• M. A. H. Khalafalla, H. Mizuta, S. Oda, Z. A. K. Durrani. Variation of Electrostatic Coupling and Investigation of Single Electron Percolation Paths in Nanocrystalline Silicon Cross Transistors, IEEE Silicon Nanoelectrinics Workshop, Vol. 9-15, 2005.
• G. Yamahata, A. Tanaka, Y. Kawata, Y.Tsuchiya, S. Saito, T. Arai, H. Mizuta, S. Oda. Bottom-Up Fabrication of Si Nanodot Transistors Using the Nc-Si Dots Solution, IEEE Silicon Nanoelectrinics Workshop, Vol. 9-14, 2005.
• S. Huang, H. Mizuta, S. Oda. Charging-Storing-Discharging Processes in Nitrided Nanocrystalline Silicon Dots, IEEE Silicon Nanoelectrinics Workshop, Vol. 9-10, 2005.
• T. Nagami, N.Momo, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, H. Mizuta, S. Oda. Mechanical Property Analysis and Structural Optimization for NEMS Memory Devices, IEEE Silicon Nanoelectrinics Workshop, Vol. 7-4, 2005.
• S. Oda. Formation, Characterization and Applications of Nanocrystalline Silicon Quantum Dots Prepared by VHF Plasma Processes, 4th International Conference on the Physics of Dusty Plasmas, Vol. *, 2005.
• M. Khalafalla, H. Mizuta, Z. A.K. Durrani, H. Ahmed, S. Oda. Observation of Interdot Coupling Phenomena in Nanocrystalline Silicon Point-Contact Structures, Second International Conference on Advanced Materials and Nanotechnology, Vol. *, 2005.
• A. Tanaka, Y. Tsuchiya, K. Usami, H. Mizuta, S. Oda. High-Density Assembly of Nanocrystalline Silicon Quantum Dots, Second International Conference on Advanced Materials and Nanotechnology, Vol. *, 2005.

国内会議発表 (査読なし・不明)

• 松﨑貴広, 大場智昭, 川那子高暢, 小田俊理. PVAによるMoS2FETへのキャリアドーピングと電気特性への影響, 2019年 第80回 応用物理学会秋季学術講演会, Sept. 2019.
• 大場智昭, 川那子高暢, 小田俊理. ゲート付き4 端子法によるMoS2 FET の電気特性評価, 2018年 第79回 応用物理学会秋季学術講演会, 第79回応用物理学会秋季学術講演会 講演予稿集, 公益社団法人 応用物理学会, Sept. 2018.
• 米田淳, 武田健太, 大塚朋廣, 中島峻, Matthieu R. Delbecq, Giles Allison, 本田拓夢, 小寺哲夫, 小田俊理, 星裕介, 宇佐美徳隆, 伊藤公平, 樽茶清悟. 同位体制御Si/SiGe単一電子スピンの1/f電荷揺らぎによる位相雑音, 日本物理学会2017年秋季大会, Sept. 2017.
• 島⾕直樹, ⼭岡裕, ⽯原良⼀, Aleksey Andreev, David Williams, ⼩⽥俊理, ⼩寺哲夫. シリコン量⼦ドットにおける正孔輸送特性の温度依存性, 第64回応用物理学会春季学術講演会, Mar. 2017.
• ⼭岡裕, 岩崎⼀真, ⼩⽥俊理, ⼩寺哲夫. スピン軌道相互作⽤量⼦ビットに向けたpチャネルシリコン量子ドットの正孔スピン輸送特性, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 川那⼦⾼暢, 居駒遼, Du Wanjing, ⼩⽥俊理. ⾃⼰組織化単分⼦膜を⽤いたadhesion lithographyによるMoS2 FETの作製, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 野口 智弘, Simanullang Marolop, 宇佐美 浩一, 小寺 哲夫, 小田 俊理. Ge/Si コアシェル ナノワイヤの電気伝導率における径依存性, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• 前川 未知瑠, テノリオぺルル ハイメ, ヘルブスレブ エルンスト, 山岡 裕, 小寺 哲夫, 小田 俊理. シリコン量子ドットにおける表面酸化膜中電荷のコヒーレンス効果, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• 河野行雄, 居駒遼, 川那子高暢, 小田俊理. ジデシルホスホン酸(C12H25-PA)をゲート絶縁膜の用いたMoS2 FETの作製, 第７７回応用物理学会秋季学術講演, Sept. 2016.
• 島本祐輔, 須藤建瑠, 波多野睦子, 小田俊理, 岩崎孝之. ナノダイヤモンド中に形成したGeVセンターからの単一光子放出, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• 鈴木 大地, 小田 俊理, 河野 行雄. 光熱起電力を用いたテラヘルツ帯検出器の熱解析及びイメージング応用, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• 落合 雄輝, 鈴木 大地, 小田 俊理, 河野 行雄. 単層カーボンナノチューブフィルムを用いたテラヘルツ波検出器における熱電効果の向上, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• 山岡 裕, 岩崎 一真, 小田 俊理, 小寺 哲夫. p型シリコン2重量子ドットにおけるパウリスピンブロッケード領域内漏れ電流の磁場依存性, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• 高木 寛之, 野口 智弘, Simanullang Marolop, 宇佐美 浩一, 小寺 哲夫, 小田 俊理. 低温下におけるGe/Si コアシェルナノワイヤの電気特性評価, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• 平岡 宗一郎, 堀部 浩介, 小寺 哲夫, 小田 俊理. シリコン3重量子ドットの等価回路シミュレーション, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• 杜 婉静, 川那子 高暢, 小田 俊理. Multifunctional Phosphonic Acid Self-Assembled Monolayer for Metal Patterning, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• 川那子 高暢, 小田 俊理. 自己組織化単分子膜をゲート絶縁膜に用いた低電圧駆動MoS2 FETの作製, 第63回応用物理学会春季学術講演会, June 2016.
• K. Takeda, J. Kamioka, J. Yoneda, T. Otsuka, M. R. Delbecq, G. Allison, T. Nakajima, T. Kodera, S. Oda, S. Tarucha. AC Stark effect and optimal control of a strongly driven Si/SiGe quantum dot spin qubit, Silicon Quantum Electronics Workshop, June 2016.
• 山岡 裕, 小田 俊理, 小寺 哲夫. 高濃度ドーピングしたシリコンを用いた単一量子ドットの正孔輸送特性, 第63回応用物理学会春季学術講演会, Mar. 2016.
• 本田 拓夢, 米田 淳, 武田 健太, 川那子 高暢, 小寺 哲夫, 樽茶 清悟, 小田 俊理. 多層Al ゲート構造を用いたSi-MOS 量子ドットデバイス作製プロセスの検討, 第63回応用物理学会春季学術講演会, Mar. 2016.
• 前川 未知瑠, テノリオペルル ハイメ, ヘルブスレブ エルンスト, 山岡 裕, 小寺 哲夫, 小田 俊理. 極低温下連続マイクロ波照射下での単一量子ドットの電子輸送特性, 第63回応用物理学会春季学術講演会, Mar. 2016.
• 野口 智弘, シマヌラン マロロップ ダポット クリスマン, Koichi Usami, 小寺 哲夫, 小田 俊理. Ge/Si コアシェル ナノワイヤの熱電性能測定, 第63回応用物理学会春季学術講演会, Mar. 2016.
• 堀部 浩介, 小寺 哲夫, 小田 俊理. 【第7回シリコンテクノロジー分科会論文賞受賞記念講演】 スピン量子デバイスに向けた少数電子シリコン量子ドットの研究, 第63回応用物理学会春季学術講演会, Mar. 2016.
• 西野 孝夫, 平岡 宗一郎, 井原 敏, 小寺 哲夫, 小田 俊理. 極薄膜SOIを用いた量子ドットデバイスの作製と評価, 第63回応用物理学会春季学術講演会, Mar. 2016.
• 島本 祐輔, 岩崎 孝之, 須藤 健瑠, 波多野 睦子, 小田 俊理. ダイヤモンド粒子中に形成したGeVセンターの発光特性, 第63回応用物理学会春季学術講演会, Mar. 2016.
• 岩崎 一真, 小寺 哲夫, 小田 俊理. P型Si二重量子ドット内の少数正孔領域でのパウリスピンブロッケードの観測, 第63回応用物理学会春季学術講演会, Mar. 2016.
• S. Hiraoka, S. Oda. Electrical Properties and Equivalent-Circuit Model of Physically-Defined Silicon Triple Quantum Dots Charged with Few Electrons, 2016.
• Xiangying Deng, Shunri Oda, Yukio Kawano. Split-joint Bull''s Eye Structure With Aperture Optimization For Multi-frequency Terahertz Plasmonic Antennas, 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2016.
• Michiru Maekawa, Jaime Tenorio-Pearl, Ernst Herbschleb, Yu Yamaoka, Tetsuo Kodera, Shunri Oda. Controlling the asymmetric line-shape of charge-trapped induced resonances in a single quantum dot, 9th International Conference on Quantum Dots, 2016.
• 野口智弘, 森田広大, Simanullang Marolop, 宇佐美浩一, 小寺哲夫, 小田俊理. ナノツリーを抑制したGe/Si コアシェル ナノワイヤの熱電性能測定, 第76回応用物理学会秋季学術講演会, p. 14p-2Q-10, Sept. 2015.
• 武田健太, 神岡純, 小幡利顕, 大塚朋廣, 中島峻, Matthieu Delbecq, 天羽真一, 米田淳, Giles Alison, 野入亮人, 菅原烈, 小寺哲夫, 小田俊理, 樽茶清悟. Si2重量子ドット中の単一電子スピンの高速独立操作, 日本物理学会 2015秋季大会, Sept. 2015.
• 岩崎 一真, 小寺 哲夫, 小田 俊理. シリコン２重量子ドットにおける正孔輸送特性, 第76回応用物理学会秋季学術講演会, Sept. 2015.
• 山岡 裕, 小田 俊理, 小寺 哲夫. 高濃度ドーピングしたシリコンを用いた2重量子ドットの電子輸送特, 第76回応用物理学会秋季学術講演会, Sept. 2015.
• 米田淳, 本田拓夢, 武田健太, Marian Marx, 大塚朋廣, 中島峻, Matthieu Delbecq, 天羽真一, Giles Allison, 小寺哲夫, 小田俊理, 樽茶清悟. 電極閉じ込め型シリコンMOS量子ドットの作製と評価, 2015年日本物理学会秋季大会, Sept. 2015.
• 国崎愛子, ムルガナタンマノハラン, 水田博, 小田俊理, 岩崎孝之, 波多野睦子, 小寺哲夫. ダイヤモンド中の単一複合欠陥の探索に向けたスピン状態に関する第一原理計算, 第76回応用物理学会秋季学術講演会, p. 15p-4F-25, Sept. 2015.
• 平岡宗一郎, 堀部浩介, 小寺哲夫, 小田俊理. サイドゲートによるシリコン3重量子ドットの単電子移動制御, 第76回応用物理学会秋季学術講演会, p. 15a-1C-4, Sept. 2015.
• 本田拓夢, 米田淳, 武田健太, 小寺哲夫, 樽茶清悟, 小田俊理. Si-MOS構造を有する多重量子ドットデバイスの特性評価, 第76回応用物理学会秋季学術講演会, p. 15a-1C-3, Sept. 2015.
• 堀部 浩介, 小寺 哲夫, 小田 俊理. リソグラフィにより形成されたシリコン2重結合量子ドット内の電子スピン状態のパルス測定, 応用物理学会春季学術講演会, Mar. 2015.
• 藤村 直紀, 石川 昴, 陸 昴義, 小田 俊理, 河野 行雄. 近接場光顕微鏡を用いた中赤外ログスパイラルアンテナの解析, 応用物理学会春季学術講演会, Mar. 2015.
• 野口 智弘, 森田 広大, Simanullang Marolop, Xu Zhengyu, 宇佐美 浩一, 河野 行雄, 小寺 哲夫, 小田 俊理. コアシェルナノワイヤ作製に向けたナノワイヤ形状に対するSiシェル膜厚依存性の観測, 応用物理学会春季学術講演会, Mar. 2015.
• 本田 拓夢, 小寺 哲夫, 米田 淳, 武田 健太, 樽茶 清悟, 小田 俊理. ゲート制御性を向上したSi-MOS量子ドットデバイスの作製と評価, 応用物理学会春季学術講演会, Mar. 2015.
• 森田 広大, 野口 智弘, 宇佐美 浩一, SIMANULLANGMAROLOP, 河野 行雄, 小寺 哲夫, 小田 俊理. Ge/Si コアシェルナノワイヤの熱電特性評価, 応用物理学会春季学術講演会, 2015.
• T. Kodera, K. Horibe, T. Kambara, K. Yamada, R. Mizokuchi, Y. Lu, S. Ihara, S. Oda. Silicon quantum dot devices using metal-insulator-semiconductor structures, 第４回半導体量子効果と量子情報の夏期研修会, Sept. 2014.
• 井原敏, 小田俊理, 河野行雄. FDTD法によるテラヘルツ帯プラズモニックアンテナの小型化検討, 第75回応用物理学会秋季学術講演会, Sept. 2014.
• 平野智之, 鈴木大地, 小田俊理, 河野行雄. GaAs/AlGaAsを用いたテラヘルツ帯チューナブル検出素子のゲート電圧による出力変調とキャリア緩和過程, 第75回応用物理学会秋季学術講演会, Sept. 2014.
• 山崎将太郎, 舩木健伍, 宇佐美浩一, 河野行雄, 小田俊理. 電気泳動を用いたディップコーティング法によるシリコンナノ結晶の配列制御, 第75回応用物理学会秋季学術講演会, Sept. 2014.
• 本田拓夢, 武田健太, 神岡純, 米田淳, Marian Marx, 小寺哲夫, 樽茶清悟, 小田俊理. アンドープ基板を用いたSi/SiGe量子ドットデバイスのノイズ評価, 第75回応用物理学会秋季学術講演会, Sept. 2014.
• 野口智弘, 森田広大, Marolop Simanullang, Zhengyu Xu, 宇佐美浩一, 河野行雄, 小寺哲夫, 小田俊理. ナノツリーの発生を抑制したGe/Siコアシェルナノワイヤ成長, 第75回応用物理学会秋季学術講演会, Sept. 2014.
• 呂逸, 堀部浩介, 小寺哲夫, 小田俊理. 2つのシリコン2重量子ドットデバイス間の静電結合観測, 第75回応用物理学会秋季学術講演会, Sept. 2014.
• 堀部浩介, 小寺哲夫, 小田俊理. チャージセンサを用いた2重結合シリコン量子ドット内のスピンブロッケード現象の観測, 第75回応用物理学会秋季学術講演会, Sept. 2014.
• 森田広大, 野口智弘, SIMANULLANGMAROLOP, 宇佐美浩一, 小寺哲夫, 小田俊理. Ge/Si コアシェルナノワイヤとSiナノワイヤのヘテロ接合作製, 第61回応用物理学会春季学術講演会, Mar. 2014.
• 高橋綱己, 別府伸耕, 陳君ろ, 小田俊理, 内田建. バルク／SOI FinFET の自己加熱およびアナログ特性の最適化, 第61回応用物理学会春季学術講演会, Mar. 2014.
• Marolop Simanullang, Kouichi Usami, Tetsuo Kodera, Yukio Kawano, Kaustav Banerjee, Shunri Oda. Design of tunnel FET based on Ge nanowires, 東京工業大学COI-Tプログラム平成25年度成果報告会, Mar. 2014.
• 溝口来成, 小寺哲夫, 堀部浩介, 小田俊理. 電荷センサを集積した三角形状三重量子ドット構造による電荷フラストレーション, 第61回応用物理学会春季学術講演会, Mar. 2014.
• 新留彩, 高橋綱己, 小田俊理, 内田建. グラフェン抵抗変化型メモリの3端子動作に関する研究, 第61回応用物理学会春季学術講演会, Mar. 2014.
• 神岡純, 武田健太, 小幡利顕, 小寺哲夫, 樽茶清悟, 小田俊理. Si/SiGe二重量子ドットによるパウリスピンブロッケードの観測, 第61回応用物理学会春季学術講演会, Mar. 2014.
• 山田宏, 小寺哲夫, 蒲原知宏, 堀部浩介, 河野行雄, 小田俊理. ホール輸送によるp型二重結合量子ドットの磁場依存性, 第61回応用物理学会春季学術講演会, Mar. 2014.
• 蒲原知宏, 小寺哲夫, 小田俊理. 形状異方性を持つ強磁性体を用いた局所磁場によるシリコン量子ドット中の電子スピン共鳴法の検討, 第61回応用物理学会春季学術講演会, 2014.
• 呂逸, 小寺哲夫, 堀部浩介, 小田俊理. SF6ドライエッチングによるシリコン量子ドットの作製と評価, 第61回応用物理学会春季学術講演会, 2014.
• 陸昂義, 神岡純, 小寺哲夫, 小田俊理, 河野行雄. 広帯域アンテナを結合したシリコン量子ドットによるテラヘルツ波検出, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 小幡利顕, 武田健太, J. Kierig, A. Wild, J. Sailer, 神岡純, 小寺哲夫, W. M. Akhtar, 小田俊理, D. Bougeard, G. Abstreiter, 樽茶清悟. 同位体制御したSiを用いたSi/SiGeにおけるダブルドット, 日本物理学会 2013年秋季大会, Sept. 2013.
• T. Kodera, K. Horibe, T. Kambara, R. Mizokuchi, Y. Arakawa, S. Oda. Lithographically- defined silicon quantum dots in a metal-oxide-semiconductor structure, 3rd Summer School on Semiconductor/Superconducting Quantum Coherence Effects and Quantum Information, Sept. 2013.
• K. Horibe, T. Kodera, Y. Kawano, S. Oda. Observation of back-action by a charge sensor in a silocon device, 3rd Summer School on Semiconductor/Superconducting Quantum Coherence Effects and Quantum Information, Sept. 2013.
• R. Mizokuchi, T. Kodera, K. Horibe, Y. Arakawa, S. Oda. Silicon triangular triple quantum dot with charge sensor, 3rd Summer School on Semiconductor/Superconducting Quantum Coherence Effects and Quantum Information, Sept. 2013.
• 高橋綱己, 小田俊理, 内田建. 熱特性モデル化による回路中のFinFET動作温度評価手法, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 近藤信啓, 舩木健伍, 中峯嘉文, 宇佐美浩一, 小寺哲夫, 河野行雄, 小田俊理. VHFプラズマにより作製したナノ結晶シリコン中のトラップの評価, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 野口智弘, 小寺哲夫, 小路智也, Simanullang Marolop, 宇佐美浩一, 河野行雄, 小田俊理. 微細径Ge/Siコアシェルナノワイヤの作製と評価, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 黒澤裕也, 角谷直哉, 高橋綱己, 大橋輝之, 小田俊理, 内田建. 不純物のイオン化エネルギー増大によるナノワイヤトランジスタの電気的特性に与える影響, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 溝口来成, 小寺哲夫, 堀部浩介, 河野行雄, 荒川泰彦, 小田俊理. 三角形状に配置したシリコン三重量子ドットのチャージセンシング, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 堀部浩介, 小寺哲夫, 河野行雄, 小田俊理. チャージセンサのバックアクションによるシリコン量子ドット内電子励起の観測, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 山田宏, 小寺哲夫, 蒲原知宏, 河野行雄, 小田俊理. ホール輸送によるp型二重結合量子ドットの特性評価, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 神岡純, 小寺哲夫, 武田健太, 小幡利顕, W. M. Akhtar, 樽茶清悟, 小田俊理. Si/SiGe系MOS構造量子ポイントコンタクトの特性評価, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 池本和史, 中峯嘉文, 河野行雄, 小田俊理. SiH4パルス供給によるArプラズマ発光の増大と生成したシリコンナノ結晶の関係, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 舩木健伍, 近藤信啓, 宇佐美浩一, 小寺哲夫, 河野行雄, 野崎智洋, 小田俊理. シリコンナノ結晶とP3HTの複合体における光伝導特性評価, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 新留彩, 高橋綱己, 小田俊理, 内田建. グラフェン抵抗変化型メモリのSET/RESET条件に関する研究, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• SulthoniMuhammad Amin, 小寺哲夫, 蒲原知宏, 河野行雄, 小田俊理. 単層ゲートによるシリコン2重量子ドット形成のシミュレーション, 2012年春季第59回応用物理学関係連合学術講演会, 18a-GP6-10, Mar. 2013.
• 小寺 哲夫, 堀部 浩介, 蒲原 知宏, 山端 元音, 内田 建, 荒川 泰彦, 小田 俊理. 電子スピン量子ビットに向けた少数電子シリコン量子ドットの実現, 第58回応用物理学関係連合講演会, 25p-KV-1, Mar. 2013.
• 堀部浩介, 小寺哲夫, 蒲原知宏, 河野行雄, 小田俊理. チャージセンサによるシリコン2重結合量子ドットの少数電子状態観測, 第60回応用物理学会春季学術講演会, Mar. 2013.
• 高橋綱己, 別府伸耕, 小田俊理, 内田建. 熱配慮設計によるFinFETアナログ特性の最適化, 第60回応用物理学会春季学術講演会, 2013.
• 大橋輝之, 小田俊理, 内田建. 歪みによる電子移動度向上へMOS界面における変形ポテンシャル上昇が与える影響, 第60回応用物理学会春季学術講演会, 2013.
• 鈴木大地, 小田俊理, 河野行雄. GaAs/AlGaAsを用いたテラヘルツ帯分光器のゲート電圧による出力変調, 第60回応用物理学会春季学術講演会, 2013.
• 新留 彩, 別府伸耕, 高橋綱己, 小田俊理, 内田 建. 架橋・非架橋構造のグラフェン抵抗変化型メモリの書込・消去特性, 第60回応用物理学会春季学術講演会, 2013.
• 小路智也, 小寺哲夫, 野口智弘, 宇佐美浩一, 河野行雄, 小田俊理. 熱電変換素子に向けたGe/Si コアシェルナノワイヤの作製, 第60回応用物理学会春季学術講演会, 2013.
• 溝口来成, 小寺哲夫, 堀部浩介, 河野行雄, 小田俊理. 三角形状に配置したシリコン三重量子ドットの電子輸送特性, 第60回応用物理学会春季学術講演会, 2013.
• 蒲原知宏, 小寺哲夫, 河野行雄, 小田俊理. 微小磁性体電極集積によるシリコン2重結合量子ドットへの2軸磁場印加, 第60回応用物理学会春季学術講演会, 2013.
• 神岡純, 小寺哲夫, 武田健太, 小幡利顕, Waseem. M. Akhtar, 樽茶清悟, 小田俊理. Si/SiGe系MOS構造量子ポイントコンタクトの特性評価, 2013.
• 神岡 純, 小寺哲夫, 武田健太, 小幡利顕, 吉田勝治, 樽茶清悟, 小田俊理. MOS構造gateを有するSi/SiGe量子ドットデバイスの作製, 2012年 秋季 第73回応用物理学会学術講演会, Sept. 2012.
• 山田 宏, 小寺哲夫, 蒲原知宏, 河野行雄, 小田俊理. ホール輸送によるp型量子ドットの作製と特性評価, 2012年 秋季 第73回応用物理学会学術講演会, Sept. 2012.
• 小寺哲夫, 溝口来成, 林 久志, 堀部浩介, 蒲原知宏, 荒川泰彦, 小田俊理. 正三角形の頂点に配置したシリコン3重量子ドットの作製と特性評価, 第73回応用物理学会学術講演会, Sept. 2012.
• Marolop Simanullang, 野口智弘, Akhmadi Surawijaya, 宇佐美浩一, 小寺哲夫, 河野行雄, 小田俊理. Low growth temperature of Ge NWs for electron device application, 2012年 秋季 第73回応用物理学会学術講演会, Sept. 2012.
• Jannatul Susoma, Yoshifumi Nakamine, Nobuhiro Kondo, Tetsuo Kodera, kouichi usami, Yukio Kawano, SHUNRI ODA. Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High Performance Electron Device, 2012年 秋季 第73回応用物理学会学術講演会, Sept. 2012.
• 近藤信啓, 染野健, 中峯嘉文, 宇佐美浩一, 小寺哲夫, 河野行雄, 小田俊理. VHFプラズマにより作製したナノ結晶シリコンのフッ硝酸による粒径縮小, 2012年 秋季 第73回応用物理学会学術講演会, Sept. 2012.
• 蒲原知宏, 小寺哲夫, 小田俊理. バックゲートとソース/ドレイン電圧印加による各量子ドットの電気化学ポテンシャル制御, 2012年 秋季 第73回応用物理学会学術講演会, Sept. 2012.
• 小田俊理. クロージングトーク, 第59回応用物理学関係連合講演会, 15p-F6-9, Mar. 2012.
• 蒲原知宏, 小寺哲夫, T. Ferrus, A. Rossi, 堀部浩介, 荒川泰彦, D. Williams, 小田俊理. シリコン２重結合量子ドットの少数電子領域観測へ向けた構造最適化の検討, 2012年春季第59回応用物理学関係連合学術講演会, 17a-A1-3, Mar. 2012.
• 福岡佑二, 小寺哲夫, 武田健太, 小幡利顕, 吉田勝治, 澤野憲太郎, 内田建, 白木靖寛, 樽茶清悟, 小田俊理. Capping gate構造を有するSi/SiGe量子ドットの作製と評価, 2012年春季第59回応用物理学関係連合学術講演会, Mar. 2012.
• 澤田知孝, 小寺哲夫, 河野行雄, 波多野睦子, 小田俊理. ナノギャップ電極とナノ結晶シリコン量子ドットの電子輸送特性, 2012年春季第59回応用物理学関係連合学術講演会, 18a-GP6-9, Mar. 2012.
• 黒澤裕也, 角谷直哉, 高橋綱己, 大橋輝之, 小田俊理, 内田 建. ナノ薄膜SOI における不純物のイオン化エネルギー増大, 第59回応用物理学関係連合講演会, 17a-A1-4, Mar. 2012.
• 小寺哲夫, 堀部浩介, 林文城, 蒲原知宏, T. Ferrus, A. Rossi, 内田建, D. A. Williams, 荒川泰彦, 小田俊理. シリコン量子ドットを用いた電荷検出, 日本物理学会2012年年次大会, Mar. 2012.
• 別府伸耕, 小田俊理, 内田 建. AC コンダクタンス法及びパルスIV 法による自己発熱抑制時のSOI MOSFETドレイン電流評価, 第59回応用物理学関係連合講演会, 17a-A1-8, Mar. 2012.
• 高橋綱己, 別府伸耕, 陳 君璐, 小田俊理, 内田 建. デバイスシミュレータを用いたナノスケールBulk/SOI FinFET の熱設計, 第59回応用物理学関係連合講演会, 17a-A1-9, Mar. 2012.
• 大橋輝之, 高橋綱己, 内田 建, 小田俊理. MOS 界面における変形ポテンシャルの上昇, 第59回応用物理学関係連合講演会, 17a-A1-3, Mar. 2012.
• 中峯嘉文, 小寺哲夫, 河野行雄, 内田 建, 小田俊理. 無水フッ酸エッチングによるシリコンナノ結晶の自然酸化膜の除去, 第59回応用物理学関係連合講演会, 17p-GP11-9, Mar. 2012.
• 大橋輝之, 高橋綱己, 小寺哲夫, 小田俊理, 内田 建. ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明, 秋季 第73回応用物理学会学術講演会, 2012.
• 野口智弘, 小寺哲夫, Marolop Simanullang, Surawijaya Akhmadi, 宇佐美浩一, 小田俊理. Si ナノワイヤ FETの電気特性に対するアニーリング処理の影響, 秋季 第73回応用物理学会学術講演会, 2012.
• 神岡 純, 小寺哲夫, 武田健太, 小幡利顕, 吉田勝治, 樽茶清悟, 小田俊理. MOS構造gateを有するSi/SiGe量子ドットデバイスの作製, 第73回応用物理学会学術講演会, 2012.
• Jannatul susoma, 中峯嘉文, 近藤信啓, 小寺哲夫, 宇佐美浩一, 河野行雄, 小田俊理. Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High Performance Electron Device, 第73回応用物理学会学術講演会, 2012.
• Marolop Simanullang, 野口智弘, Akhmadi Surawijaya, 宇佐美浩一, 小寺哲夫, 河野行雄, 小田俊理. Low growth temperature of Ge NWs for electron device application, 第73回応用物理学会学術講演会, 2012.
• 別府伸耕, 小田俊理, 内田 建. ACコンダクタンス法を用いた実験手法に対する検証, 第73回応用物理学会学術講演会, 2012.
• 高橋綱己, 別府伸耕, 小田俊理, 内田 建. デバイスシミュレータを用いたナノスケールBulk/SOI FinFET熱等価回路モデルの導出, 第73回応用物理学会学術講演会, 2012.
• 新留 彩, 福田祐樹, 小田俊理, 内田 建. ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明, 第73回応用物理学会学術講演会, 2012.
• 鈴木大地, 小田俊理, 河野行雄. GaAs/AlGaAsを用いた周波数可変テラヘルツ波検出器のゲート電圧による応答制御, 第73回応用物理学会学術講演会, 2012.
• 新留 彩, 福田裕樹, 小田俊理, 内田 建. 架橋多層グラフェンナノリボンにおける電荷数の温度依存性, 第59回応用物理学関係連合講演会, 2012.
• 小寺哲夫, 溝口来成, 堀部浩介, 河野行雄, 小田俊理. 単電子トランジスタによるSi三重量子ドットのチャージセンシング, 第73回応用物理学会学術講演会, 2012.
• 小寺哲夫, 堀部浩介, 蒲原知宏, 山端元音, 内田建, 荒川泰彦, 小田俊理. シリコン量子ドットにおけるスピン効果と磁場依存性, 日本物理学会2011年秋季大会, Sept. 2011.
• Jean Tarun, Shaoyun Huang, 福間康裕, 井土 宏, 大谷義近, 深田直樹, 石橋幸治, 小田俊理. シリコンナノワイヤ磁気抵抗効果における界面の影響, 第72回応用物理学会学術講演会, 第72回応用物理学会学術講演会, pp. 1a-P7-21, Sept. 2011.
• 中峯嘉文, Mohammad Mofrad, Michiel Van Der Zwan, Johan Van Der Cingel, 小寺哲夫, 内田 建, 石原良一, 小田俊理. レーザアニーリングによるシリコンナノ結晶薄膜の電気特性への影響, 第72回応用物理学会学術講演会, pp. 2p-ZG-2, Aug. 2011.
• Berrin Pinar Algul, Tetsuo Kodera, SHUNRI ODA, Ken Uchida. NTFETsにおけるトンネル・リーク電流の抑制に関する研究, 第72回応用物理学会学術講演会, pp. 30a-ZJ-4, Aug. 2011.
• 染野 健, 宇佐美浩一, 小寺哲夫, 河野行雄, 波多野睦子, 小田俊理. VHF プラズマにより作製したナノ結晶シリコンの光学的特性, 第72回応用物理学会学術講演会, pp. 31p-P6-3, Aug. 2011.
• 澤田知孝, 小寺哲夫, 河野行雄, 波多野睦子, 小田俊理. ナノギャップ電極とナノ結晶シリコン量子ドットの集積配列, 第72回応用物理学会学術講演会, pp. 1p-P10-1, Aug. 2011.
• 堀部浩介, 小寺哲夫, 蒲原知宏, 内田 建, 小田俊理. シリコン量子ドットと単電子トランジスタ電荷センサーの静電結合評価, 第72回応用物理学会学術講演会, pp. 1p-P10-2, Aug. 2011.
• 福岡佑二, 小寺哲夫, 大塚朋廣, 武田健太, 小幡利顕, 吉田勝治, 澤野憲太郎, 内田 建, 白木靖寛, 樽茶清悟, 小田俊理. Si/SiGe量子ドット構造のシミュレーションと作製, 第72回応用物理学会学術講演会, pp. 1p-P10-3, Aug. 2011.
• 大橋輝之, 高橋綱己, 小寺哲夫, 小田俊理, 内田 建. 低温・強磁場環境を利用した極薄膜SOI中の変形ポテンシャルの評価, 第72回応用物理学会学術講演会, pp. 2a-J-11, Aug. 2011.
• 小寺哲夫, 堀部浩介, 林 文城, 蒲原知宏, Thierry Ferrus, Alessandro Rossi, 内田 建, David Williams, 荒川泰彦, 小田俊理. 並列結合したシリコン量子ドットにおける電荷検出実験, 第72回応用物理学会学術講演会, pp. 2p-K-5, Aug. 2011.
• 小田俊理. トップダウンとボトムアッププロセスを融合したシリコン量子構造デバイス, 第58回応用物理学関係連合講演会, 26p-BN-7, Mar. 2011.
• 福岡佑二, 小寺哲夫, 大塚朋廣, 武田健太, 小幡利顕, 吉田勝治, 澤野憲太郎, 内田 建, 白木靖寛, 樽茶清悟, 小田俊理. Si/SiGe 量子ドット作製に向けたPd トップゲート動作点の低電圧化, 第58回応用物理学関係連合講演会, 26p-KV-6, Mar. 2011.
• 林 文城, 小寺哲夫, Thierry Ferrus, Alessandro Rossi, David Williams, 内田 建, 小田俊理. シリコン単電子トランジスタを電荷センサとした電子数変化の検出, 第58回応用物理学関係連合講演会, 27a-KC-7, Mar. 2011.
• 角谷直哉, 高橋綱己, 大橋輝之, 小寺哲夫, 小田俊理, 内田 建. 高不純物濃度のETSOI(Extremely-Thin SOI) 拡散層における移動度とSOI 膜厚および不純物濃度の関係, 第58回応用物理学関係連合講演会, Mar. 2011.
• 染野 健, 宇佐美浩一, 小寺哲夫, 波多野睦子, 小田俊理. VHF プラズマセル法によるナノ結晶シリコンのフォトルミネッセンス特性, 第58回応用物理学関係連合講演会, 25a-BJ-9, Mar. 2011.
• 堀部浩介, 小寺哲夫, 蒲原知宏, 内田 建, 小田俊理. チャージセンサによるシリコン量子ドットの少数電子状態観測, 第58回応用物理学関係連合講演会, Mar. 2011.
• 中峯嘉文, Michiel Van Der Zwan, Johan Van Der Cingel, 小寺哲夫, 内田 建, 石原良一, 小田俊理. VHF プラズマにより作製されたシリコンナノ結晶のレーザアニーリング, 第58回応用物理学関係連合講演会, 27p-BA-4, Mar. 2011.
• 武田健太, 小幡利顕, 福岡佑二, 大塚朋廣, 小寺哲夫, 吉田勝治, 澤野憲太郎, 小田俊理, 白木靖寛, 樽茶清悟. PdショットキーゲートによるSi/SiGe量子ドットの作製とその評価, 日本物理学会秋季大会, Sept. 2010.
• ベッリン ピナー アルグル, 小寺哲夫, 小田俊理, 内田 建. CNTトランジスタにおけるバンド間トンネルを利用したS係数60 mV/dec未満を実現するデバイスパラメータの研究, 第71回応用物理学会学術講演会, 15a-ZK-1, Sept. 2010.
• 高下雅央, 石川哲也, 宇佐美浩一, 小寺哲夫, 内田 建, 小田俊理. 凹凸基板を用いたディップコーティング法によるナノ結晶シリコンの集積化技術, 第71回応用物理学会学術講演会, 17a-ZB-4, Sept. 2010.
• 小寺哲夫, 山端元音, 蒲原知宏, 内田 建, 小田俊理. シリコン結合量子ドットにおけるスピン効果の観測, 第71回応用物理学会学術講演会, 14p-NC-6, Sept. 2010.
• 福岡佑二, 小寺哲夫, 大塚朋廣, 武田健太, 小幡利顕, 吉田勝治, 澤野憲太郎, 内田 建, 白木靖寛, 樽茶清悟, 小田俊理. Si/SiGe系2DEGのPdショットゲート制御による結合量子ドットの作製, 第71回応用物理学会学術講演会, 14a-NC-1, Sept. 2010.
• 蒲原知宏, 小寺哲夫, 山端元音, 内田 建, 小田俊理. サイドゲートとトップゲートを用いたシリコン二重結合量子ドット形成シミュレーション, 第71回応用物理学会学術講演会, 17p-ZE-1, Sept. 2010.
• 小林大助, 栗原智之, 小寺哲夫, 内田 建, 野平博司, 小田俊理. Pr系酸化膜を用いたヘテロ積層構造トンネル膜の電気特性シミュレーションと作製及び評価, 第71回応用物理学会学術講演会, 17a-ZE-2, Sept. 2010.
• 引田和宏, 小寺哲夫, 小田俊理, 内田 建. InPに格子整合したIn0.53Ga0.47Asバンド構造の一軸歪み依存性, 第71回応用物理学会学術講演会, 16a-ZE-10, Sept. 2010.
• 角谷直哉, 高橋綱己, 小寺哲夫, 小田俊理, 内田 建. pn接合の無い極薄膜SOIトランジスタの作製と電気特性評価, 第71回応用物理学会学術講演会, 16a-ZE-2, Sept. 2010.
• kouichi usami, Tetsuo Kodera, Ken Uchida, SHUNRI ODA. Small-diameter Ge nanowires grown at 280°C by VLS－CVD, 第71回応用物理学会学術講演会, 15a-ZD-4, Sept. 2010.
• Jean Tarun, Shaoyun Huang, 福間康裕, 井土 宏, 大谷義近, 深田直樹, 石橋幸治, 小田俊理. Silicon Nanowire-Based Lateral Spin Valve Device, 第71回応用物理学会学術講演会, 16a-A-11, Sept. 2010.
• Toshiaki Obata, 申潤錫, ロランドブルナ, Kenta Takeda, Yuji Fukuoka, 大塚朋廣, Tetsuo Kodera, 吉田勝治, 澤野憲太郎, SHUNRI ODA, 白木靖寛, Seigo Tarucha. Lateral dot fabrication by using a MOS electric gate on SiGe hetero structure, 日本物理学会秋季大会, Sept. 2010.
• 小寺哲夫, 堀部浩介, 蒲原知宏, 山端元音, T. Ferrus, D. Williams, 荒川泰彦, 小田俊理. 少数電子シリコン量子ドットの作製とスピン現象の観測, 公開シンポジウム 「ナノ量子情報エレクトロニクスの進展」, Mar. 2010.
• 蒲原知宏, 小寺哲夫, 山端元音, 内田 建, 小田俊理. ダブルトップゲートを有するシリコン量子ドットのシミュレーションと作製, 第57回応用物理学関係連合講演会, 19a-B-3, Mar. 2010.
• Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, Syunri Oda. Simulation of silicon double quantum dots device fabricated by combining lithographical and electrostatical approaches, 第57回応用物理学関係連合講演会, 19a-B-4, Mar. 2010.
• 中峯嘉文, 小寺哲夫, 内田 建, 小田俊理. VHFプラズマパワーの変化によるシリコンナノ結晶の縮小化, 第57回応用物理学関係連合講演会, 17a-TG-10, Mar. 2010.
• 小田俊理. ナノ結晶シリコン量子ドットデバイス, 第57回応用物理学関係連合講演会, 19p-TG-5, Mar. 2010.
• 高橋綱己, 山端元音, 小木 純, 小寺哲夫, 小田俊理, 内田 建. 強磁場印加による(110) pMOSFETサブバンド構造の直接的観測, 第57回応用物理学関係連合講演会, 18a-B-2, Mar. 2010.
• 永見 佑, 土屋良重, 水田 博, 内田 建, 小田俊理. エレクトロメカニカルシミュレーションによるNEMSメモリのスケーリング特性, 第57回応用物理学関係連合講演会, 17p-B-12, Mar. 2010.
• ロバートソン イアン, 内田 建, 小田 俊理. Utilizing electoosmotic affects in aligning DNA functionalized nanowires after being anchored onto a pattern surface, 第57回応用物理学関係連合講演会, 19p-ZE-4, Mar. 2010.
• 小木 純, Thierry Ferrus, 小寺哲夫, 土屋良重, 内田 建, David Williams, 水田 博, 小田俊理. シリコン宙づり構造内の結合二重量子ドットの電子フォノン相互作用, 第57回応用物理学関係連合講演会, 20a-P14-13, Mar. 2010.
• 小寺哲夫, Thierry Ferrus, 山端元音, 中岡俊裕, David Williams, 小田俊理, 荒川泰彦. シリコン結合量子ドットの電子輸送特性評価, 日本物理学会2009年秋季大会, Sept. 2009.
• 山端元音, 小寺哲夫, 水田 博, 内田 建, 小田俊理. トップゲートとサイドゲートによるシリコン結合量子ドットの静電結合制御, 第70回応用物理学会学術講演会, Sept. 2009.
• 小寺哲夫, 大野圭司, 中岡俊裕, 熊谷直人, 樽茶清悟, 小田俊理, 荒川泰彦. InAs量子ドットとInGaAs量子井戸を内包した縦型ピラー構造の電気伝導特性, 第70回応用物理学会学術講演会, Sept. 2009.
• 中峯嘉文, 内田 建, 小田俊理. VHFプラズマにより作製されたSi量子ドットのPドーピング, 第56回応用物理学関係連合講演会, Apr. 2009.
• 永見 佑, 土屋良重, 斎藤慎一, 新井 唯, 嶋田壽一, 水田 博, 内田 建, 小田俊理. pn接合部でのトラップを介したトンネリングを考慮したNEMSメモリの, 第56回応用物理学関係連合講演会, Apr. 2009.
• 小木 純, Thierry Ferrus, 土屋良重, 内田 建, David Williams, 水田 博, 小田俊理. Siナノブリッジチャネルに埋め込まれた結合二重量子ドット特性観測, 第56回応用物理学関係連合講演会, Mar. 2009.
• Xin Zhou, 中峯嘉文, 内田 建, 小田俊理. Trap effects on carrier transport in Si nanocrystals thin film, 第56回応用物理学関係連合講演会, Mar. 2009.
• 山端元音, 土屋良重, 水田 博, 内田 建, 小田俊理. シリコン量子ドットデバイスの制御性向上に関する検討, 第56回応用物理学関係連合講演会, Mar. 2009.
• 小田俊理. ネオSiによる新デバイス, ワークショップ「オン・シリコンテクノロジーの新展開 ─ Si上の新しい世界」, pp. *, Oct. 2006.
• 水田 博, 永見 祐, Benjamin Pruvost, 百々信幸, 小木 純, 松田真之助, 柴村純平, 土屋良重, 斎藤慎一, 新井 唯, 木村嘉伸, 嶋田壽一, 小田俊理. ナノエレクトロメカニカル構造を有するシリコンナノ機能デバイス, 応用物理学会シリコンテクノロジー分科会第85回研究集会, pp. *, Sept. 2006.
• 筆宝大平, 浦川圭, 川田善之, 土屋良重, 水田博, 越田信義, 小田俊理. 2方向エッチングによるシリコン3次元フォトニック結晶への欠陥導入プロセス, 第67回応用物理学会学術講演会, pp. 29a-ZD-5, Aug. 2006.
• Benjamin Pruvost, 水田　博, 小田俊理. ハイブリッドSET-NEMS用いた構造を新機能デバイスの研究, 第67回応用物理学会学術講演会, pp. 31p-ZR-9, Aug. 2006.
• 鄭 恵貞, 田中敦之, 筆宝大平, 宇佐美浩一, 土屋良重, 水田　博, 小田俊理. サイズ制御したシリコン量子ドットからの可視エレクトロルミネッセンス, 第67回応用物理学会学術講演会, pp. 1a-P15-27, Aug. 2006.
• 田中敦之, 土屋良重, 宇佐美浩一, 齋藤真一, 新井　唯, 水田　博, 小田俊理. LB膜作製法を用いたナノ結晶シリコンドット集積化技術, 第67回応用物理学会学術講演会, pp. 29a-ZR-3, Aug. 2006.
• 永見　佑, 松田真之介, 土屋良重, 斎藤慎一, 新井　唯, 嶋田壽一, 水田　博, 小田俊理. 有限要素シミュレーションによるNEMSメモリの読み出し特性の解析, 第67回応用物理学会学術講演会, pp. 30p-ZR-7, Aug. 2006.
• 松田真之介, 永見　佑, 土屋良重, 斎藤慎一, 新井　唯, 嶋田壽一, 水田　博, 小田俊理. NEMSメモリデバイスの実現にむけた電圧印加による曲がり梁のスイッチング検証, 第67回応用物理学会学術講演会, pp. 30p-ZR-8, Aug. 2006.
• 向井　崇, 田中敦之, 土屋良重, 宇佐美浩一, 水田　博, 小田俊理. 分散液中のナノ結晶シリコンドットの表面修飾, 第67回応用物理学会学術講演会, pp. 29a-ZR-2, Aug. 2006.
• 古川亮介, 須藤貴也, 土屋良重, 野平博司, 水田　博, 丸泉琢也, 白木靖寛, 小田俊理. MOCVD法によるPrシリケートゲート絶縁膜のN2アニール効果の検討, 第67回応用物理学会学術講演会, pp. 31a-P10-1, Aug. 2006.
• 澤井俊一郎, 東島　賢, 土屋良重, 岡本政邦, 水田　博, 小田俊理. 第一原理計算によるSiO2/Si/SiO2ナノ構造中のフォノン解析, 第67回応用物理学会学術講演会, pp. 29a-ZR-6, Aug. 2006.
• 川田善之, Mohamed Kharafalla, 宇佐美浩一, 土屋良重, 水田　博, 小田俊理. ナノ結晶シリコン二重量子ドットと単電子トランジスタの集積化, 第67回応用物理学会学術講演会, pp. 29a-ZR-7, Aug. 2006.
• Manoharan Muruganathan, Kawata Yoshiyuki, Mizuta Hiroshi, Oda Shunri. RF-SETに向けた可変トンネルバリア・マルチゲートシリコン単電子トランジスタ, 第67回応用物理学会学術講演会, pp. 29a-ZR-8, Aug. 2006.
• Mohammed Khalafalla, 水田　博, 小田俊理, DurraniZahid. ナノ結晶シリコンポッイントコンタクトトランジスタにおけるクーロンギャップ内共嗚コンダクタンスの観測, 第67回応用物理学会学術講演会, pp. 29p-ZR-3, Aug. 2006.
• 小木　純, Mohammed Khalafalla, 永見　佑, 土屋良重, 水田　博, 小田俊理. シリコンナノブリッジトランジスタの作製と評価, 第67回応用物理学会学術講演会, pp. 29p-ZR-4, Aug. 2006.
• 栗原智之, 新倉浩樹, 土屋良重, 水田　博, 小田俊理. スタック型二重フローティングゲート不揮発性メモリ特性シミュレーション, 第67回応用物理学会学術講演会, pp. 30p-ZR-6, Aug. 2006.
• 山端元音, 土屋良重, 水田　博, 小田俊理. シリコン多重量子ドットアレイデバイスの作製, 第67回応用物理学会学術講演会, pp. 29a-ZR-4, Aug. 2006.
• A Surawijaya, Y. Tsuchiya, H. Mizuta, S. Oda. Resonant Tunneling Device Using a Single Nanocrystalline Silicon Quantum Dot, Extended Abstracts (The 53rd Spring Meeting, 2006); The Japan Society of Applied Physics and Related Societies, Vol. 24p-X-19, Mar. 2006.
• 永見　佑, 百々信幸, 土屋良重, 斎藤慎一, 新井　唯, 嶋田壽一, 水田　博, 小田俊理. 3次元有限要素シミュレーションによるNEMSメモリのスイッチング電圧低減の検討, 第53回応用物理学関係連合講演会, Vol. 25a-X-1, Mar. 2006.
• M.Muruganathan, H. Mizuta, S. Oda. SET-Spiceハイブリッドシミュレーションを用いたRE-SETの感度解析, 第53回応用物理学関係連合講演会, pp. 24p-X-1, Mar. 2006.
• 小木　純, 百々信幸, Mohammed Khalafalla, 土屋良重, 水田　博, 小田俊理. シリコンナノブリッジトランジスタの作製と評価, 第53回応用物理学関係連合講演会, Vol. 24p-G-4, Mar. 2006.
• 川田善之, Mohamed Kharafalla, 宇佐美浩一, 土屋良重, 水田　博, 小田俊理. マルチゲートシリコン単電子トランジスタの作製, 第53回応用物理学関係連合講演会, Vol. 24p-G-3, Mar. 2006.
• 鄭　恵貞, 筆宝大平, 田中敦之, 宇佐美浩一, 土屋良重, 水田　博, 小田俊理. シリコン量子ドットからの可視エレクトロルミネッセンスの観測, 第53回応用物理学関係連合講演会, Vol. 25p-ZH-10, Mar. 2006.
• 百々信幸, 永見　佑, 土屋良重, 斎藤慎一, 新井　唯, 嶋田壽一, 水田　博, 小田俊理. NEMSメモリデバイスの実現に向けた2層ブリッジ構造体の作製, 第53回応用物理学関係連合講演会, Vol. 25a-X-2, Mar. 2006.
• 筆宝大平, 浦川　圭, 川田善之, 土屋良重, 水田　博, 越田信義, 小田俊理. 2方向エッチングによるシリコン3次元フォトニック結晶の作製, 第53回応用物理学関係連合講演会, pp. 22a-L-6, Mar. 2006.
• 田中敦之, 土屋良重, 宇佐美浩一, 水田　博, 小田俊理. 分散溶媒を用いたナノ結晶シリコンドット集積化技術：傾斜基板上での集積化, 第53回応用物理学関係連合講演会, pp. 22p-N-8, Mar. 2006.
• B. Pruvost, H. Mizuta, S. Oda. ナノエレクトロメカニカルゲートを有する高機能MOSFET及びSETの設計・解析, 第53回応用物理学関係連合講演会, pp. 23p-X-6, Mar. 2006.
• 佐藤大典, 新倉浩樹, 土屋良重, 水田　博, 野平博司, 丸泉琢也, 白木靖寛, 小田俊理. SiO2/HfO2/SiO2積層トンネル膜を用いたスタック型二重フローティングゲートメモリ, 第53回応用物理学関係連合講演会, pp. 24a-X-10, Mar. 2006.
• S-Y. Huang, K. Usami, Y. Tsuchiya, H. Mizuta, S. Oda. A Few Electron Memory Device Based on Surface Nitrided Nanocrystalline Silicon Dots, Extended Abstracts (The 53rd Spring Meeting, 2006); The Japan Society of Applied Physics and Related Societies, Vol. 24p-X-11, Mar. 2006.
• 筆宝大平, 浦川　圭, 川田善之, 土屋良重, 水田　博, 越田信義, 小田俊理. 2方向エッチングによるシリコン3次元フォトニック結晶の作製, 第53回応用物理学関係連合講演会, Vol. 22a-L-6, 2006.
• 田中敦之, 土屋良重, 宇佐美浩一, 水田　博, 小田俊理. 分散溶媒を用いたナノ結晶シリコンドット集積化技術：傾斜基板上での集積化, 第53回応用物理学関係連合講演会, Vol. 22p-N-8, 2006.
• 佐藤大典, 新倉浩樹, 土屋良重, 水田　博, 野平博司, 丸泉琢也, 白木靖寛, 小田俊理. SiO2/HfO2/SiO2積層トンネル膜を用いたスタック型二重フローティングゲートメモリ, 第53回応用物理学関係連合講演会, Vol. 24a-X-10, 2006.
• M.Muruganathan, H. Mizuta, S. Oda. SET-Spiceハイブリッドシミュレーションを用いたRE-SETの感度解析, 第53回応用物理学関係連合講演会, Vol. 24p-X-1, 2006.
• B. Pruvost, H. Mizuta, S. Oda. ナノエレクトロメカニカルゲートを有する高機能MOSFET及びSETの設計・解析, 第53回応用物理学関係連合講演会, Vol. 23p-X-6, 2006.
• 黒川康良, 東島賢, 土屋良重, 岡本政邦, 水田博, 小田俊理. 第一原理計算によるシリコンナノロッドの量子輸送シミュレーション, 平成17年春季 第52回応用物理学関係連合講演会, Mar. 2005.
• 鄭 仰東, 土屋 良重, 佐藤 大典, 水田 博, 小田 俊理. HfO2薄膜成長過程の分光エリプソメトリによるその場観察と第一原理計算との比較, 応用物理学会 シリコンテクノロジー分科会　第70回研究集会「ゲート絶縁膜の現状と課題 ? 誘電率と界面 ?」, Vol. 70-1, pp. 13-18, 2005.
• Benjamin Pruvost, 小田俊理, 水田　博. ハイブリッドSET-MOS-NEMSシミュレーション用単電子トランジスタ解析モデル, 第66回応用物理学会学術講演会, Vol. 8p-S-6, 2005.
• 筆宝大平, 浦川圭, 川田善之, 土屋良重, 水田　博, 越田信義, 小田俊理. 磁場印加陽極酸化法を用いたシリコン3次元構造の作製, 第66回応用物理学会学術講演会, Vol. 8a-H-11, 2005.
• 小田俊理, 水田博. シリコン量子ドットデバイス, 応用物理学会応用電子物性分科会研究会, pp. 77-81, 2005.
• 池澤健太, 土屋良重, 宇佐美浩一, 水田　博, 小田俊理. SiH4/H2/Arガス混合プラズマによるナノ結晶シリコンの作製と評価, 第52回応用物理学関係連合講演会, Vol. 30a-ZG-9, 2005.
• 永見　佑, 百々信幸, 土屋良重, 斎藤慎一, 新井　唯, 嶋田壽一, 水田　博, 小田俊理. 歪みを考慮したNEMSメモリデバイスの高精度スイッチング動作解析, 第52回応用物理学関係連合講演会, Vol. 1a-P6-23, 2005.
• 田中敦之, 土屋良重, 宇佐美浩一, 水田　博, 小田俊理. 分散溶媒を用いたナノ結晶シリコンドットの2次元集積化, 第52回応用物理学関係連合講演会, Vol. 1a-P6-16, 2005.
• S. Huang, K. Usami, Y. Tsuchiya, H. Mizuta, S. Oda. Analysis of Combined Storage in Nitrided Nanocrystalline Silicon Dots, Extended Abstracts (The 52nd Spring Meeting, 2005); The Japan Society of Applied Physics and Related Societies, Vol. 1a-P6-14, 2005.
• 黒川康良, 東島　賢, 土屋良重, 岡本政邦, 水田　博, 小田俊理. 第一原理計算によるシリコンナノロッドの量子輸送シミュレーション, 第52回応用物理学関係連合講演会, Vol. 1a-P6-9, 2005.
• 山端元音, 田中敦之, 川田善之, 土屋良重, 斎藤真一, 新井　唯, 水田　博, 小田俊理. ナノ結晶Siドット分散溶液を用いたSiナノドットクラスタデバイスの作製, 第52回応用物理学関係連合講演会, Vol. 1a-P6-8, 2005.
• Mohammed Khalafalla, H. Mizuta, Zahid Durrani, S. Oda. Variation of electrostatic coupling and investigation of current percolation paths in novel nanocrystalline silicon cross transistors, Extended Abstracts (The 52nd Spring Meeting, 2005); The Japan Society of Applied Physics and Related Societies, Vol. 1a-P6-4, 2005.
• 藤田啓嗣, 土屋良重, 野平博司, 水田　博, 丸泉琢也, 服部健雄, 小田俊理. 角度分解X線光電子分光法によるPrシリケート／Si(100)界面近傍の深さ方向化学結合状態分析, 第52回応用物理学関係連合講演会, Vol. 1p-ZB-5, 2005.
• 鄭　仰東, 土屋良重, 佐藤大典, 水田　博, 小田俊理. 分光エリプソメトリによるHfO2薄膜成長過程のその場観察：第一原理計算との比較, 第52回応用物理学関係連合講演会, Vol. 30a-ZB-5, 2005.
• 筆宝大平, 浦川　圭, 土屋良重, 水田　博, 越田信義, 小田俊理. I可視域3次元シリコンフォトニック結晶の設計と作製プロセス, 第52回応用物理学関係連合講演会, Vol. 29a-YV-7, 2005.
• 黒川康良, 東島賢, 土屋良重, 岡本政邦, 水田博, 小田俊理. 第一原理シミュレーションによるシリコンナノロッドの電子状態解析, 平成16年秋季 第65回応用物理学会学術講演会, Sept. 2004.
• 東島賢, 黒川康良, 土屋良重, 岡本政邦, 水田博, 小田俊理. 第一原理計算(SIESTA)を用いたナノ結晶Si量子ドットの電子状態解析, 平成16年秋季 第65回応用物理学会学術講演会, Sept. 2004.

特許など

• 水田博, 佐藤　大典, 土屋良重, 小田俊理. 不揮発性半導体記憶装置. 特許. 公開. 国立大学法人東京工業大学. 2006/03/17. 特願2006-074489. 2007/09/27. 特開2007-250974. 2007.
• 小田俊理, 水田博, 筆宝　大平, 越田　信義. 周期構造体およびその製造方法. 特許. 登録. 国立大学法人東京工業大学, 国立大学法人　東京農工大学. 2005/06/10. 特願2005-171213. 2006/12/21. 特開2006-343671. 特許第4734633号. 2011/05/13 2011.

学位論文

• ZnSの低抵抗化と表示素子への応用に関する研究,  本文,  工学博士,  東京工業大学,  1979/03/26,   

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