論文

• Abe Katsumi, Kamiya Toshio, Hosono Hideo. Quantum confinement effects in amorphous In-Ga-Zn-O thin-film transistors with quantum well channel, Applied Physics Letters, Nov. 2024.
• Takayoshi Katase, Seiya Nomoto, Xinyi He, Suguru Kitani, Takashi Honda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Simultaneous Realization of Single-Crystal-Like Electron Transport and Strong Phonon Scattering in Polycrystalline SrTiO3–xHx, ACS Appl. Electron. Mater., Vol. 6, pp. 7424, Sept. 2024.
• Atsushi Fukuchi, Takayoshi Katase, Toshio Kamiya. Room-Temperature Possible Current-Induced Transition in Ca2RuO4 Thin Films Grown through Intercalation-Like Cation Diffusion in the A2BO4 Ruddlesden–Popper Structure, Small Methods, pp. 2400264, Sept. 2024.
• Fumiya Izumisawa, Yuta Ishii, Masatoshi Kimura, Takayoshi Katase, Toshio Kamiya, Jun-ichi Yamaura, Yusuke Kobayashi. Symmetry Change in LaNiO3 Films Caused by Epitaxial Strain from LaAlO3, SrTiO3, and DyScO3 Pseudocubic (001) Surfaces, J. Appl. Phys., Vol. 136, pp. 075303, Aug. 2024.
• Kosuke Takenaka, Hibiki Komatsu, Taichi Sagano, Keisuke Ide, Susumu Toko, Takayoshi Katase, Toshio Kamiya, Yuichi Setsuhara. Hydrogen-included Plasma-assisted Reactive Sputtering for Conductivity Control of Ultra-Wide Bandgap Amorphous Gallium Oxide, Jpn. J. Appl. Phys., Vol. 63, pp. 04SP65, Aug. 2024.
• Weizheng Cai, Xinyi He, Tian-Nan Ye, Xinmeng Hu, Chuanlong Liu, Masato Sasase, Masaaki Kitano, Toshio Kamiya, Hideo Hosono, Jiazhen Wu. Discovery of Self-Assembled 2D Ru/Si Superlattices Boosting Hydrogen Evolution, SMALL, July 2024.
• Atsushi Tsurumaki-Fukuchi, Takayoshi Katase, Toshio Kamiya. Thickness-dependent intergrowth of Ruddlesden–Popper impurity structures in solid-phase epitaxial growth of Ca2RuO4 thin films, J. Ceram. Soc. Jpn., Vol. 132, pp. 312, July 2024.
• Xinyi He, Tatsuya Cho, Takayoshi Katase, Kota Hanzawa, Suguru Kitani, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Wide-Gap p-Type Layered Oxychalcogenides AE2CuInO3Ch (AE: Alkaline Earth; Ch: Chalcogen): Unusually Low Residual Carrier Concentration and Green-to-Red Emission, CHEMISTRY OF MATERIALS, 36, June 2024.
• Chihiro Yamamoto, Xinyi He, Kota Hanzawa, Takayoshi Katase, Masato Sasase, Jun-ichi Yamaura, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Phonon drag thermopower persisting over 200 K in FeSb2 thin film on SrTiO3 single crystal, APPLIED PHYSICS LETTERS, May 2024.
• Keiji Tsubaki, Masashi Arita, Takayoshi Katase, Toshio Kamiya, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi. Significant effects of epitaxial strain on nonlinear transport properties in Ca2RuO4 thin films with the current-driven transition, Jpn. J. Appl. Phys., Vol. 63, pp. 01SP03, Dec. 2023.
• Xinyi He, Shigeru Kimura, Takayoshi Katase, Terumasa Tadano, Satoru Matsuishi, Makoto Minohara, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya. Inverse-Perovskite Ba3BO (B=Si and Ge) as a HighPerformance Environmentally Benign ThermoelectricMaterial with Low Lattice Thermal Conductivity, Advanced Science, p. 2307058, Dec. 2023.
• Takayoshi Katase, Toshio Kamiya. Enhancement of thermoelectric performance by breaking thermopower - conductivity trade-off relation in artificially designed oxide thin-film heterostructures, J. Ceram. Soc. Jpn., Vol. 131, pp. 343, Aug. 2023.
• Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo. Enhancement of thermoelectric properties of SrSi2 films by mixing cubic and trigonal phase, ACS Appl. Energy Mater. 2023, vol. 6, pp. 6593−6597, June 2023.
• Keiji Tsubaki, Atsushi Tsurumaki-Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi. Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High-Speed Resistive Switching in the Absence of an Abrupt Thermal Transition, Adv. Electron. Mater., Vol. 9, pp. 2201303, Apr. 2023.
• Xinyi He, Seiya Nomoto, Takehito Komatsu, Takayoshi Katase, Terumasa Tadano, Suguru Kitani, Hideto Yoshida, Takafumi Yamamoto, Hiroshi Mizoguchi, Keisuke Ide, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya. Hydride anion substitution boosts thermoelectric performance of polycrystalline SrTiO3 via simultaneous realization of reduced thermal conductivity and high electronic conductivity, Adv.Funct. Mater., Vol. 33, 28, p. 2313144, Apr. 2023.
• Xinyi He, Seiya Nomoto, Takehito Komatsu, Takayoshi Katase, Terumasa Tadano, Suguru Kitani, Hideto Yoshida, Takafumi Yamamoto, Hiroshi Mizoguchi, Keisuke Ide, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya. Hydride anion substitution boosts thermoelectric performance of polycrystalline SrTiO3 via simultaneous realization of reduced thermal conductivity and high electronic conductivity, Adv.Funct. Mater., Vol. 33, 28, p. 2313144, Apr. 2023.
• Xinyi He, Seiya Nomoto, Takehito Komatsu, Takayoshi Katase, Terumasa Tadano, Suguru Kitani, Hideto Yoshida, Takafumi Yamamoto, Hiroshi Mizoguchi, Keisuke Ide, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya. Hydride anion substitution boosts thermoelectric performance of polycrystalline SrTiO3 via simultaneous realization of reduced thermal conductivity and high electronic conductivity, Adv.Funct. Mater., Vol. 33, 28, p. 2313144, Apr. 2023.
• Zhongxu Hu, Mari Hiramatsu, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Reversible Thermal Conductivity Modulation of Non-equilibrium (Sn1-xPbx)S by 2D-3D Structural Phase Transition above Room Temperature, ACS Appl. Energy Mater., Vol. 6, pp. 3504, Mar. 2023.
• M. Hiraishi, H. Okabe, A. Koda, R. Kadono, T. Ohsawa, N. Ohashi, Keisuke Ide, Toshio Kamiya, Hideo Hosono. Local electronic structure of dilute hydrogen in Beta-Ga2O3 probed by muons, Phys. Rev. B, Jan. 2023.
• M. Hiraishi, H. Okabe, A. Koda, R. Kadono, T. Ohsawa, N. Ohashi, Keisuke Ide, Toshio Kamiya, Hideo Hosono. Local electronic structure of dilute hydrogen in Beta-Ga2O3 probed by muons, Phys. Rev. B, Jan. 2023.
• Takayoshi Katase, Toshio Kamiya. Giant electronic conductivity switching driven by artificial modulation of crystal structure dimensionality, JSAP Review, pp. 220418, Dec. 2022.
• 片瀬貴義, 神谷利夫. 非平衡(Pb,Sn)Se半導体における2D-3D構造転移の人工的誘起と巨大電気特性変調, 応用物理, Vol. 91, No. 11, pp. 683, Nov. 2022.
• Keisuke Ide, Naoto Watanabe, Takayoshi Katase, Masato Sasase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes, Appl. Phys. Lett., Vol. 121, pp. 192108, Nov. 2022.
• Makoto Minohara, Yuka Dobashi, Naoto Kikuchi, Akane Samizo, Takashi Honda, Xinyi He, Takayoshi Katase, Toshio Kamiya, Keishi Nishio, Yoshihiro Aiura. Tuning of Hole Carrier Density in p-type α-SnWO4 by Exploiting Oxygen Defects, Materials Advances, Vol. 3, pp. 9111, Nov. 2022.
• 片瀬貴義, 神谷利夫. 電気伝導率と熱起電力を同時に向上できる酸化物熱電材料を開発, セラミックス, Vol. 57, No. 2, pp. 114, Aug. 2022.
• Akihiro Shiraishi, Shigeru Kimura, Xinyi He, Naoto Watanabe, Takayoshi Katase, Keisuke Ide, Makoto Minohara, Kosuke Matsuzaki, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya. Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors, INORG. CHEM., 61, 6650−6659, Apr. 2022.
• Kohei Yamamoto, Tomoyuki Tsuyama, Suguru Ito, Kou Takubo, Iwao Matsuda, Niko Pontius, Christian Schusler-Langeheine, Makoto Minohara, Hiroshi Kumigashira, Yuichi Yamasaki, Hironori Nakao, Youichi Murakami, Takayoshi Katase, Toshio Kamiya, Hiroki Wadati. Photoinduced transient states of antiferromagnetic orderings in La1/3Sr2/3FeO3 and SrFeO3-δ thin films observed through time-resolved resonant soft x-ray scattering, New J. Phys., Vol. 24, pp. 043012, Apr. 2022.
• Kaiwen Li, Atsushi Shimizu, Xinyi He, Keisuke Ide, Kota Hanzawa, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Q. Zhang, Toshio Kamiya. Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate, ACS Appl. Electron. Mater., Vol. 4, pp. 2026, Apr. 2022.
• Xinyi He, Jinshuai Chen, Takayoshi Katase, Makoto Minohara, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya. High-Mobility Metastable Rock-Salt Type (Sn,Ca)Se Thin Film Stabilized by Direct Epitaxial Growth on a YSZ (111) Single-Crystal Substrate, ACS Appl. Mater. Interfaces, 14, 18682–18689, Apr. 2022.
• Makoto Minohara, Naoto Kikuchi, TKouhei Tsukada, Yuka, Dobashi, Akane Samizo, Keishi Nishio, Xinyi He, Takayoshi Katase, Toshio Kamiya, Yoshihiro Aiura. Effect of intentional chemical doping on crystallographic and electric properties of the pyrochlore Bi2Sn2O7, Materials & Design, Vol. 216, pp. 110549, Mar. 2022.
• Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution, Advanced Science, Vol. 9, pp. 202105958, Mar. 2022.
• 片瀬貴義, 神谷利夫. 温度差で発電する酸化物熱電材料 人工構造を利用した、熱電変換特性を高める新たなアプローチ, クリーンエネルギー, Vol. 31, No. 3, pp. 37, Mar. 2022.
• 片瀬貴義, 神谷利夫. 結晶構造の次元性を人為的に制御し,巨大な電気抵抗スイッチを実現, 自動車技術「超の世界」, Vol. 75, No. 12, pp. 118, Feb. 2022.
• Yusaku Nishimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Suguru Kitani, Kota Hanzawa, Shigenori Ueda, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya. Electronic and Lattice Thermal Conductivity Switching by 3D−2D Crystal Structure Transition in Nonequilibrium (Pb1−xSnx)Se, Advanced Electronic Materials, 32, 2200024 (1 of 9), Feb. 2022.
• Masatoshi Kimura, Xinyi He, Takayoshi Katase*, Terumasa Tadano, Jan M. Tomczak, Makoto Minohara, Ryotaro Aso, Hideto Yoshida, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya. Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO3/LaNiO3/LaAlO3 heterostructure, Nano letters, Vol. 21, pp. 9240-9246, Oct. 2021.
• Takayoshi Katase*, Xinyi He, Terumasa Tadano, Jan M. Tomczak, Takaki Onozato, Keisuke Ide, Bin Feng, Tetsuya Tohei, Hidenori Hiramatsu, Hiromichi Ohta, Yuichi Ikuhara, Hideo Hosono, Toshio Kamiya. Breaking of thermopower – conductivity trade-off in LaTiO3 film around Mott insulator to metal transition, Advanced Science, Vol. 8, pp. 202102097, Oct. 2021.
• Xinyi He, Takayoshi Katase*, Keisuke Ide, Hideo Hosono, Toshio Kamiya. Ion substitution effect on defect formation in two-dimensional transition metal nitrides semiconductor, AETiN2 (AE = Ca, Sr, Ba), Inorg. Chem., Vol. 60, pp. 10227-10234, July 2021.
• Loku Singgappulige Rosantha Kumara, Kyohei Ishikawa, Keisuke Ide, Hideo Hosono, Toshio Kamiya, Osami Sakata. Local Structure Properties of Hydrogenated and Nonhydrogenated Amorphous In-Ga-Zn-O Thin Films Using XAFS and High-Energy XRD, J. Phys. Chem. C, 125, 13619–13628, June 2021.
• Kohei Yamagami, Keisuke Ikeda, Atushi Hariki, Yujun Zhang, Akira Yasui, Yasumasa Takagi, Takayoshi Katase, Toshio Kamiya, Hiroki Wadati. Hard x-ray photoemission study on strain effect in LaNiO3 thin films, Appl. Phys. Lett., vol. 118, pp. 161601, Apr. 2021.
• Takayoshi Katase, Yudai Takahashi, Xinyi He, Terumasa Tadano, Keisuke Ide, Hideto Yoshida, Shiro Kawachi, Jun-ichi Yamaura, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Reversible 3D-2D structural phase transition and giant electronic modulation in nonequilibrium alloy semiconductor, lead-tin-selenide, SCIENCE ADVANCES, Vol. 7, pp. eabf2725, Mar. 2021.
• Chihiro Yamamoto, Xinyi He, Takayoshi Katase, Keisuke Ide, Yosuke Goto, Yoshikazu Mizuguchi, Akane Samizo, Makoto Minohara, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Double charge polarity switching in Sb-doped SnSe with switchable substitution sites, Adv. Funct. Mater., p. 202008092, Dec. 2020.
• Christian A. Niedermeier, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya. Shallow valence band of rutile GeO2 and p-type doping, J. Phys. Chem. C, vol. 124, p. 25721-25728, Nov. 2020.
• Hikaru Sato, Hidenori Hiramatsu, * Toshio Kamiya, Hideo Hosono. Strain Engineering at Heterointerfaces: Application to an Iron Pnictide Superconductor, Cobalt-Doped BaFe2As2, ACS Appl. Mater. Interfaces,, 12, 50096-50104, Oct. 2020.
• Sanlue Hu, Bing Xia, Yang-Peng Lin, Takayoshi Katase, Jun Fujioka, Toshio Kamiya, Hideo Hosono, Ke-Zhao Du, Zewen Xiao. p-Type Transparent Quadruple Perovskite Halide Conductors: Fact or Fiction?, Adv. funct. mater., 30, 1909906-1-6, June 2020.
• Tianping Ying, Yoshinori Muraba, Soshi Iimura, Tongxu Yu, Peihong Cheng, Toshio Kamiya, Yangfan Lu, Jiang Li, Yanpeng Qi, Hideo Hosono. Anomalous Charge State Evolution and Its Control of Superconductivity in M3Al2C (M = Mo, W), iScience,, 23, 101196-1-9, June 2020.
• Atsushi Tsurumaki-Fukuchi, Keiji Tsubaki, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi. Stable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca2RuO4, ACS Applied Materials & Interfaces, Vol. 12, pp. 28368, May 2020.
• Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya. Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO3, BaSnO3, and SrTiO3, Phys. Rev. B, 101, 125206-1-10, Mar. 2020.
• Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo. Fabrication and characterization of CaxSr1-x)Si2 films prepared by co-sputtering method, MRS Advances, Jan. 2020.
• Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo. Thermoelectric (BaxSr1–x)Si2 films prepared by sputtering method over the barium solubility limit, Jpn. J. Appl. Phys., vol. 59, p. SFFB02-1-6, Jan. 2020.
• Christian A. Niedermeier, Junichi Yamaura, Jiazhen Wu, Xinyi He, Takayoshi Katase, Hideo Hosono, Toshio Kamiya. New crystal structure built from a GeO6-GeO5 polyhedra network with high thermal stability: -SrGe2O5, ACS Appl. Electron. Mater., vol. 1, p. 1989-1993, Sept. 2019.
• Kenji M. Kojima, Masatoshi Hiraishi, Hirotaka Okabe, Akihiro Koda, Rryosuke Kadono, Keisuke Ide, Satoru Matsuishi, Hideya Kumomi, Toshio Kamiya, Hideo Hosono. Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon, Applied Physics Letters, 115, 122104-1-5, Sept. 2019.
• Hiroshi Mizoguchi, Joonho Bang, Takeshi Inoshita, Toshio Kamiya, Hideo Hosono. On the origin of the negative thermal expansion behavior of YCu, INORG. CHEM., American Chemical Society, Vol. 58, pp. 11819-11827, Aug. 2019.
• Kosuke Matsuzaki, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. Symmetric Ambipolar Thin-Film Transistors and High-Gain CMOS-like Inverters Using Environmentally Friendly Copper Nitride, ACS Appl. Mater. Interfaces, vol. 11, p. 35132-35137, Aug. 2019.
• Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya. Intrinsic and Extrinsic Defects in Layered Nitride Semiconductor, SrTiN2, Journal of Physical Chemistry C, vol. 123, p. 32, July 2019.
• Chia-En Wu, Keisuke Ide, Takayoshi Katase, Hidenori Hiramastu, Hideo Hosono, Chih-Lung Lin, Toshio Kamiya. New Amorphous In-Ga-Zn-O Thin-Film Transistor-Based Optical Pixel Sensor for Optical Input Signal with Short Wavelength, IEEE Transactions on Electron Devices, vol. 66, p. 3841-3846, July 2019.
• Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Transition Metal‐Doped Amorphous Oxide Semiconductor Thin‐Film Phosphor, Chromium‐Doped Amorphous Gallium Oxide, physica status solidi (a), Vol. 216, no. 5, p. 1800198, Mar. 2019.  公式リンク  
  
• Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Multiple Color Inorganic Thin‐Film Phosphor, RE‐Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature, physica status solidi (a), Vol. 216, No. 5, p. 1700833, Mar. 2019.  公式リンク  
  
• Kota Hanzawa, Yuta Yamaguchi, Yukiko Obata, Satoru Matsuishi, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Insulator-like behavior coexisting with metallic electronic structure in strained FeSe thin films grown by molecular beam epitaxy, Phys. Rev. B, 99, 035148-1 -11, Jan. 2019.
• Hidenori Hiramatsu, Kota Hanzawa, Toshio Kamiya, Hideo Hosono. Particulate Generation on Surface of Iron Selenide Films by Air Exposure, Journal of Superconductivity and Novel Magnetism, Jan. 2019.
• Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Transition metal-doped amorphous oxide semiconductor thin film phosphor, chromium-doped amorphous gallium oxide, Phys. Status Solidi A, 216, 1800198, Aug. 2018.
• Zewen Xiao, Fan-Yong Ran, Min Liao, Hidenori Hiramatsu, Keisuke Ide, Hideo Hosono, Toshio Kamiya. Multiple states and roles of hydrogen in p-type SnS semiconductors, 30, pp. 4498-4502, July 2018.
• Qi Yanpeng, Zewen Xiao, Guo Jiangang, Lei Hechang, Toshio Kamiya, Hideo Hosono. uperconductivity in non-centrosymmetric sulfide YxS₄, Europhys Lett., May 2018.
• Kunkun Li, Qing-Zhen Huang, Qinghua Zhang, Zewen Xiao, Toshio Kamiya, Hideo Hosono, Duanduan Yuan, Jiangang Guo, Xiaolong Chen. CsFe₄−δSe₄: A Compound Closely Related to Alkali-Intercalated FeSe Superconductors, Inorganic Chemistry, 57, 4502-4509, Mar. 2018.
• Keisuke Ide, * Kyohei Ishikawa, Haochun Tang, Takayoshi Katase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In‐Ga‐Zn‐O: Ultralow Optimum Oxygen Supply and Bandgap Widening, physica status solidi (a), 1700832, 1-6, Feb. 2018.
• Zewen Xiao, Yuanyuan Zhou, Hideo Hosono, Toshio Kamiya, Md. Nitin F. Padture. Bandgap optimization of perovskite semiconductors for photovoltaic applications, Chemistry A Europen Journal, 24, 1-13, Jan. 2018.
• Gang Tang, Zewen Xiao, Hideo Hosono, Toshio Kamiya, Daining Fang, Jiawang Hong. Layered Halide Double Perovskites Cs₃+nM(II)nSb₂X₉₊₃n (M = Sn, Ge) for Photovoltaic Applications, J. Phys. Chem. Lett, 9, Jan. 2018.
• Zewen Xiao, Yanfa Yan, Hideo Hosono, Toshio Kamiya. Roles of Pseudo-Closed s²Orbitals for Different Intrinsic Hole Generation between Tl−Bi and In−Bi Bromide Double Perovskites, J. Phys. Chem. Lett., 9, 258-262, Dec. 2017.
• Hidenori Hiramatsu, Hitoshi Yusa, Ryo Igarashi, Yasuo Ohishi, Toshio Kamiya, Hideo Hosono. An Exceptionally Narrow Band-Gap (~4 eV) Silicate Predicted in the Cubic Perovskite Structure: BaSiO₃, Inorg. Chem., 56, 10535 - 10542, Aug. 2017.
• Yaoqing Zhang, Bosen Wang, Zewen Xiao, Yangfan Lu, Toshio Kamiya, Yoshiya Uwatoko, Hiroshi Kageyama, Hideo Hosono. Electride and superconductivity behaviors in Mn₅Si₃-type intermetallics, npj Quantum Mater., 2, 45-1-7, Aug. 2017.
• Haochun Tang, Yosuke Kishida, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Satoru Matsuishi, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Multiple Roles of Hydrogen Treatments in Amorphous In-Ga-Zn-O Films, ECS J. Sol. State Sci. Technol., 6, 365-372, May 2017.
• Hiroshi Mizoguchi, Yoshinori Muraba, Daniel Clifford Fredrickson, Satoru Matsuishi, TOSHIO KAMIYA, HIDEO HOSONO. The Unique Electronic Structure of Mg2Si: Shaping the Conduction Bands of Semiconductors with Multi-center Bonding, Angewandte Chemie International Edition, Wiley-VCH, Vol. 56, pp. 10135-10139, May 2017.  公式リンク  
  
• Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya. Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass, ECS Journal of Solid State Science and Technology, Vol. 6, pp. 410-414, May 2017.  公式リンク  
  
• Christian A. Niedermeier, Sneha Rhode, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya, Michelle A. Moram. Electron effective mass and mobility limits in degenerate perovskite stannate BaSnO₃, Physical Review B Rapid Communications, 95, 161202(R)-1 - 6, Apr. 2017.  公式リンク  
  
• Junghwan Kim, Takumi Sekiya, Norihiko Miyokawa, Naoto Watanabe, Koji Kimoto, Keisuke Ide, Yoshitake Toda, Shigenori Ueda, Naoki Ohashi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor, NPG Asia Materials, vol. 9, p. e359, Mar. 2017.  公式リンク  
  
• Hideo Hosono, Junghwan Kim, Yoshitake Toda, Toshio Kamiya, Satoru Watanabe. Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs, Proceedings of the National Academy of Sciences, vol. 114, no. 2, pp. 233-238, Jan. 2017.  公式リンク  
  
• Keisuke Ide, Mitsuho Kikuchi, Masato Ota, Masato Sasase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors, Jpn. J. Appl. Phys., Vol. 56, pp. 03BB03-1 - 5, Jan. 2017.
• K.Ide, M. Kikuchi, M. Sasase, H. Hiramatsu, H. Kumomi, H. Hosono, T. Kamiya. Why high-pressure sputtering must be avoided to deposit a-In-Ga-Zn-O films, ; Proc. Active-Matrix Flatpanel Displays and Devices (AMFPD2016) (2016 The 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices), Vol. 7-2/298-301, 7-2/298-301, 2017.
• Kota Hanzawa, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Key Factors for Insulator - Superconductor Transition in FeSe Thin Films by Electric Field, IEEE Trans. Appl. Supercond., Vol. 27, p. 7500405, 2017.
• Hidenori Hiramatsu, Hikaru Sato, Toshio Kamiya, Hideo Hosono. BaFe₂(As_1-xP_x)₂ (x = 0.22-0.42) thin films grown on practical metal-tape substrates and their critical current densities, Supercond. sci. technol., Vol. 30, p. 044003, 2017.
• Junghwan Kim, Norihiko Miyokawa, Takumi Sekiya, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O, Thin Solid Films, Vol. 614, pp. 84-89, Sept. 2016.  公式リンク  
  
• Hiroshi Yanagi, Yuki Iguchi, Taiki Sugiyama, Toshio Kamiya, Hideo Hosono. N-type conduction in SnS by anion substitution with Cl, Appl. Phys. Express, Vol. 9, pp. 051201-1 - 3, 2016.
• Junghwan KIM, Norihiko MIYOKAWA, Keisuke IDE, Hidenori HIRAMATSU, Hideo HOSONO, Toshio KAMIYA. Transparent amorphous oxide semiconductor thin film phosphor, In–Mg–O:Eu, J. Cerm. Soc. Jpn., Vol. 124, pp. 532-535, 2016.
• Min Liao, Seiji Takemoto, Zewen Xiao, Yoshitake Toda, Tomofumi Tada, Shigenori Ueda, Toshio Kamiya, Hideo Hosono. Difficulty of carrier generation in orthorhombic PbO, J. Appl. Phys, Vol. 119, pp. 165701-1 - 7, 2016.
• Zewen Xiao, Fan-Yong Ran, Min Liao, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Amorphous pnictide semiconductor BaZn₂As₂ exhibiting high hole mobility, Appl. Phys. Lett., Vol. 109, pp. 242105-1 - 4, 2016.
• Junghwan Kim, Norihiko Miyokawa, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor, AIP Advances, Vol. 6, p. 015106, 2016.
• Fan-Yong Ran, Zewen Xiao, Hidenori Hiramatsu, Keisuke Ide, Hideo Hosono, Toshio Kamiya. SnS thin films prepared by H2S-free process and its p-type thin film transistor, AIP Adv., Vol. 6, pp. 015112-1 - 6, 2016.
• Taisuke Hatakeyama, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Novel solid-phase epitaxy for multi-component materials with extremely high vapor pressure elements: An application to KFe₂As₂, Appl. Phys. Express, Vol. 9, p. 055505, 2016.
• Takeshi Inoue, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Nonequilibrium Rock-Salt-Type Pb-Doped SnSe with High Carrier Mobilities ≈ 300 cm²/(Vs), Chem. Mater., Vol. 28, pp. 2278-2286, 2016.
• Kota Hanzawa, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Electric field-induced superconducting transition of insulating FeSe thin film at 35 K, Proc. Natl. Acad. Sci. USA, Vol. 113, pp. 3986-3990, 2016.
• Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Enhanced critical-current in P-doped BaFe₂As₂ thin films on metal substrates arising from poorly aligned grain boundaries, Sci. Rep., Vol. 6, p. 36828, 2016.
• 渡邉暁, 伊藤和弘, 渡邉俊成, 中村伸宏, 宮川直通, 金正煥, 戸田喜丈, 神谷利夫, 細野秀雄. 非晶質C12A7エレクトライドの有機ELへの応用, 旭硝子研究報告, Vol. 66, pp. 26-31, 2016.
• Haochun Tang, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors, Thin Solid Films, Vol. 614, 73-78, 2016.
• Christian A. Niedermeier, Sneha Rhode, Sarah Fearn, Keisuke Ide, Michelle A. Moram, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Solid phase epitaxial growth of high mobility La:BaSnO₃ thin films co-doped with interstitial hydrogen, Appl. Phys. Lett., Vol. 108, pp. 172101-1 -5, 2016.
• Hao-Chun TANG, Junghwan KIM, Hidenori HIRAMATSU, Hideo HOSONO, Toshio KAMIYA. Fabrication and opto-electrical properties of amorphous (Zn,B)O thin film by pulsed laser deposition, J. Ceram. Soc. Jpn., Vol. 123, pp. 523-526, 2015.
• Junghwan KIM, Hidenori HIRAMATSU, Hideo HOSONO, Toshio KAMIYA. Effects of sulfur substitution in amorphous InGaZnO4: optical properties and first-principles calculations, J. Ceram. Soc. Jpn., Vol. 123, pp. 537-541, 2015.
• Fan-Yong Ran, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya, Masataka Taniguti. Detection of dead layers and defects in polycrystalline Cu2O thin-film transistors by x-ray reflectivity and photoresponse spectroscopy analyses, J. Vac. Sci. Technol. B, Vol. 33, p. 051211, 2015.
• Fan-Yong Ran, Masataka Taniguti, Hideo Hosono, Toshio Kamiya. Analyses of Surface and Interfacial Layers in Polycrystalline Cu₂O Thin-Film Transistors, J. Displ. Technol., Vol. 11, pp. 720-724, 2015.
• Zewen Xiao, Yuanyuan Zhou, Hideo Hosono, Toshio Kamiya. Intrinsic defects in a photovoltaic perovskite variant Cs₂SnI₆, Phys. Chem. Chem. Phys., Vol. 17, pp. 18900-18903, 2015.
• Hideya Kumomi, Toshio Kamiya, Hideo Hosono. Advances in Oxide Thin-Film Transistors in Recent Decade and Their Future, (in Japanse, Hakumaku Transistor Gijutsu no Subete), Vol. 67, pp. 3-8, 2015.
• Jakub Grochowski, Yuichiro Hanyu, Katsumi Abe, Jakub Kaczmarski, Jan Dyczewski, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Origin of Lower Film Density and Larger Defect Density in Amorphous In-Ga-Zn-O Deposited at High Total Pressure, J. Disp. Technol., Vol. 11, pp. 523-527, 2015.
• Takatoshi Orui, Johannes Herms, Yuichiro Hanyu, Shigenori Ueda, Ken Watanabe, Isao Sakaguchi, Naoki Ohashi, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Charge Compensation by Excess Oxygen in Amorphous In-Ga-Zn-O Films Deposited by Pulsed Laser Deposition, J. Disp. Technol., Vol. 11, pp. 518-522, 2015.
• Fan-Yong Ran, Zewen Xiao, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route, Sci. Rep., Vol. 5, pp. 10428-1 - -8, 2015.
• Zewen Xiao, Fan-Yong Ran, Hideo Hosono, Toshio Kamiya. Route to n-type doping in SnS, Appl. Phys. Lett., Vol. 106, pp. 152103-1 - 4, 2015.
• Hiroshi Yanagi, Chiyuki Sato, Yota Kimura, Issei Suzuki, Takahisa Omata, Toshio Kamiya, Hideo Hosono. Widely bandgap tunable amorphous Cd-Ga-O oxide semiconductors exhibiting electron mobilities ≥ 10cm²LV^-1s^-1, Appl. Phys. Lett., Vol. 106, p. 082106, 2015.
• Min Liao, Zewen Xiao, Fan-Yong Ran, Hideya Kumomi, Toshio Kamiya, Hideo Hosono. Effects of Pb Doping on Hole Transport Properties and Thin-Film Transistor Characteristics of SnO Thin Films, ECS J. Solid State Sci. Technol., Vol. 4, pp. Q26-Q30, 2015.
• Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Vortex Pinning Properties of Phosphorous-Doped BaFe₂As₂ Epitaxial Films: Comparison between (La,Sr)(Al,Ta)O₃ and MgO Substrates, IEEE Trans. Appl. Supercond., Vol. DOI: 10.1109/TASC.2014.2368073, 2015.
• Yaoqing Zhang, Zewen Xiao, Toshio Kamiya, Hideo Hosono. Electron Confinement in Channel Spaces for One-Dimensional Electride, J. Phys. Chem. Lett., Vol. 6, pp. 4966-4971, 2015.
• Haochun Tang, Kyohei Ishikawa, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films, J. Appl. Phys., Vol. 118, pp. 205703-1-6, 2015.
• Takeshi Inoue, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Heteroepitaxial growth of SnSe films by pulsed laser deposition using Se-rich targets, J. Appl. Phys., Vol. 118,, pp. 205302-1 - 205302-14, 2015.
• Zewen Xiao, Hechang Lei, Xiao Zhang, Yuanyuan Zhou, Hideo Hosono, Toshio Kamiya. Ligand-Hole in [SnI6] Unit and Origin of Band Gap in Photovoltaic Perovskite Variant Cs2SnI6, Bulletin of the Chemical Society of Japan, Vol. 88, pp. 1250-1255, 2015.
• Hidenori Hiramatsu, Hikaru Sato, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition, Appl. Phys. Lett., vol. 104, p. 172602, May 2014.
• Fan-Yong Ran, Zewen Xiao, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Growth of high-quality SnS epitaxial films by H₂S flow pulsed laser deposition, Appl. Phys. Lett., Vol. 104, No. 7, pp. 072106-1 - 4, Feb. 2014.
• Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Electric double-layer transistor using layered iron selenide Mott insulator TlFe_1.6Se₂, Proc. Natl. Acad. Sci. USA, Vol. 111, No. 11, pp. 3979-3983, Feb. 2014.
• Hidenori Hiramatsu, Shogo Matsuda, Hikaru Sato, Toshio Kamiya, Hideo Hosono. Growth of c-Axis-Oriented Superconducting KFe₂As₂ Thin Films, ACS Appl. Mater. Interfaces, Vol. DOI: 10.1021/am5036016, 2014.
• Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. High critical-current density with less anisotropy in BaFe2(As,P)2 epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers, Appl. Phys. Lett.,, Vol. 104, pp. 182603-1 - 5, 2014.
• Hidenori Hiramatsu, Shogo Matsuda, Hikaru Sato, Toshio Kamiya, Hideo Hosono. Growth of c-Axis-Oriented Superconducting KFe2As2 Thin Films, ACS Appl. Mater. Interfaces, Vol. 6, pp. 14293-14301, 2014.
• Xiao Zhang, Zewen Xiao, Hechang Lei, Yoshitake Toda, Satoru Matsuishi, Toshio Kamiya, Shigenori Ueda, Hideo Hosono. Two-Dimensional Transition-Metal Electride Y2C, Chem. Mater., Vol. 26, pp. 6638-6643, 2014.
• K. Domen, T. Miyase, K. Abe, H. Hosono, T. Kamiya. Positive-Bias Stress Test on Amorphous In–Ga–Zn–O Thin Film Transistor: Annealing-Temperature Dependence, J. Displ. Technol., Vol. 10, pp. 975-978, 2014.
• Yanpeng Qi, Jiangang Guo, Hechang Lei, Zewen Xiao, Toshio Kamiya, Hideo Hosono. Superconductivity in noncentrosymmetric ternary equiatomic pnictides LaMP (M = Ir and Rh; P = P and As), Phys. Rev. B, Vol. 89, 024517-1 -, pp. 024517-1 - 6, 2014.
• Hidenori Hiramatsu, Hikaru Sato, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. Critical factor for epitaxial growth of cobalt-doped BaFe₂As₂ films by pulsed laser deposition, Appl. Phys. Lett., Vol. 104, pp. 172602-1 - 5, 2014.
• Y. Hanyu, K. Abe, K. Domen, K. Nomura, H. Hiramatsu, H. Kumomi, H. Hosono, T. Kamiya. Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs, J. Displ. Technol., pp. 979-983, 2014.
• Zewen Xiao, Hidenori Hiramatsu, Shigenori Ueda, Yoshitake Toda, Fan-Yong Ran, Jiangang Guo, Hechang Lei, Satoru Matsuishi, Hideo Hosono, Toshio Kamiya. Narrow Bandgap in β-BaZn₂As₂ and Its Chemical Origins, J. Am. Chem. Soc., Vol. 136, pp. 14959-14965, 2014.
• Takaya Miyase, Ken Watanabe, Isao Sakaguchi, Naoki Ohashi, Kay Domen, Kenji Nomura, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering, ECS J. Solid State Sci. Technol., Vol. 3, pp. Q3085-Q3090, 2014.
• Po-Ching Hsu, Chung-Chih Wu, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Film Texture, Hole Transport and Field-Effect Mobility in Polycrystalline SnO Thin Films on Glass, ECS Journal of Solid State Science and Technology, Vol. 3, pp. Q3040-Q3044, 2014.
• Kay Domen, Takaya Miyase, Katsumi Abe, Hideo Hosono, Toshio Kamiya. Positive Gate Bias Instability Induced by Diffusion of Neutral Hydrogen in Amorphous In–Ga–Zn–O Thin-Film Transistor, IEEE Electron Dev. Lett., Vol. 35, pp. 832-834, 2014.
• 朴 相源, 溝口 拓, 樹神 克明, 社本 真一, 大友季哉, 松石 聡, 神谷 利夫, 細野 秀雄. Magnetic Structure and Electromagnetic Properties of LnCrAsO witha ZrCuSiAs-type Structure (Ln = La, Ce, Pr, and Nd), INORG. CHEM., American Chemical Society, Vol. 52, p. 13363, Nov. 2013.
• Yuichiro Hanyu, Kay Domen, Kenji Nomura, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors, Appl. Phys. Lett., Vol. 103, No. 20, pp. 202114-1 - 3, Nov. 2013.
• Takayoshi Katase, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Unusual pressure effects on the superconductivity of indirectly electron-doped (Ba_1-xLa_x)Fe₂As₂ epitaxial films, Phys. Rev. B, Vol. 88, No. 14, pp. 140503(R)-1 - 5, Oct. 2013.
• Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe₂As₂ epitaxial films, New J. Phys., Vol. 15, pp. 073019-1 - 15, July 2013.
• Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. Superconducting Properties and Phase Diagram of Indirectly Electron-Doped (Sr_1-xLa_x)Fe₂As₂ Epitaxial Films Grown by Pulsed Laser Deposition, IEEE Trans. Appl. Supercond., Vol. 23, No. 3, p. 7300405, June 2013.
• Hikaru Sato, Takayoshi Katase, Won Nam Kang, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe₂As₂ epitaxial film with a high critical current density over 1 MA/cm², Phys. Rev. B, Vol. 87, No. 6, pp. 064504-1 - 7, Feb. 2013.
• Ken Watanabe, Dong-Hee Lee, Isao Sakaguchi, Kenji Nomura, Toshio Kamiya, Hajime Haneda, Hideo Hosono, Naoki Ohashi. Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere, Appl. Phys. Lett., Vol. 103, pp. 201904-1 - 5, 2013.
• Katsumi Abe, Ayumu Sato, Kenji Takahashi, Hideya Kumomi, Toshio Kamiya, Hideo Hosono. Mobility^- and temperature-dependent device model for amorphous In–Ga–Zn–O thin-film transistors, Thin Solid Films, Vol. 559, pp. 40-43, 2013.
• Zewen Xiao, Fan-Yong Ran, Hidenori Hiramatsu, Satoru Matsuishi, Hideo Hosono, Toshio Kamiya. Epitaxial growth and electronic structure of a layered zinc pnictide semiconductor, β-BaZn₂As₂, Thin Solid Films, Vol. 559, pp. 100-104, 2013.
• Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Fabrication and characterization of ZnS:(Cu,Al) thin film phosphors on glass substrates by pulsed laser deposition Original Research Article, Thin Solid Films, Vol. 559, pp. 18-22, 2013.
• Zewen Xiao, Kay Domen, Toshio Kamiya, Hideo Hosono. Apparent high mobility ~30 cm²/Vs of amorphous In–Ga–Zn–O thin-film transistor and its origin, J. Ceram. Soc. Jpn.,, Vol. 121, pp. 295-298, 2013.
• Kenji Nomura, Toshio Kamiya, Hideo Hosono. Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O, ECS J. Solid State Sci. Technol, Vol. 2, pp. 5-8, 2013.
• Takayoshi Katase, Soshi Iimura, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono:. Identical effects of indirect and direct electron doping of superconducting BaFe2As2 thin films, Phys. Rev. B, Vol. 85, No. 140516(R), pp. 1 - 4, Apr. 2012.
• Mutsumi Kimura, Takayuki Hasegawa, Keisuke Ide, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Exposed to Ozone Annealing, IEEE Electron Dev. Lett., Vol. 33, No. 3, pp. 384-386, Feb. 2012.
• S. Sallis, L. F. J. Piper, J. Francis, J. Tate, H. Hiramatsu, T. Kamiya, H. Hosono. Role of lone pair electrons in determining the optoelectronic properties of BiCuOSe, Phys. Rev. B, Vol. 85, No. 085207, pp. 1 - 6, 2012.
• Katsumi Abe, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice, Phys. Rev. B Rapid Communications, Vol. 86, pp. 081202(R)-1 - 4, 2012.
• Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. Thin film growth and device fabrication of iron-based superconductors, J. Phys. Soc. Jpn., 81, 011011, 1-25, 2012.
• Dong Hee Lee, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Metal-Semiconductor Field-Effect Transistor Made Using Amorphous In-Ga-Zn-O Channel and Bottom Pt Schottky Contact Structure at 200°C, ECS Solid State Letters, Vol. 1, pp. Q8-Q10, 2012.
• Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono:. Thin film growth by pulsed laser deposition and properties of 122-type iron-based superconductor AE(Fe_1-xCo_x)₂As₂ (AE = alkaline earth), Supercond. Sci. Technol, Vol. 25, No. 84015, pp. 1 -12, 2012.
• Mutsumi Kimura, Takayuki Hasegawa, Keisuke Ide, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Maximum applied voltage detector using amorphous In-Ga-Zn-O thin film transistor exposed to ozone annealing, Solid-State Electronics, Vol. 75, pp. 74-76, 2012.
• Keisuke Ide, Kenji Nomura, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Structural relaxation in amorphous oxide semiconductor, J. Appl. Phys, Vol. 111, No. 073513, pp. 1 - 6, 2012.
• Hidenori Hiramatsu, Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono. Microstructure and transport properties of [0 0 1]-tilt bicrystal grain boundariesin iron pnictide superconductor, cobalt-doped BaFe₂As₂, Mater. Sci. Eng. B, Vol. 177, pp. 515-519, 2012.
• Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono. Photovoltaic properties of n-type amorphous In-Ga-Zn-O and p-type single crystal Si heterojunction solar cells: Effects of Ga content, Thin Solid Films, Vol. 520, pp. 3808-3812, 2012.
• Hiroshi Mizoguchi, Toshio Kamiya, Hideo Hosono. Superconducting compounds with metallic square net, Solid State Commun, Vol. 152, pp. 666-670, 2012.
• Kenji Nomura, Toshio Kamiya, Hideo Hosono:. Stability and high-frequency operation of amorphous In-Ga-Zn-O thin-film transistors with various passivation layers, Thin Solid Films, Vol. 520, pp. 3778-3782, 2012.
• Keisuke Ide, Yutomo Kikuchi, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors, Thin Solid Films, Vol. 520, pp. 3787-3790, 2012.
• Katsumi Abe, Kenji Takahashi, Ayumu Sato, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Operation model with carrier-density dependent mobility for amorphous In-Ga-Zn-O thin-film transistors, Thin Solid Films, Vol. 520, pp. 3791-3795, 2012.
• Hiroshi Yanagi, Toshifumi Kuroda, Ki-Beom Kim, Yoshitake Toda, Toshio Kamiya, Hideo Hosono. Electron injection barriers between air-stable electride with low work function, C12A7:e^-, and pentacene, C60 and copper phthalocyanine, J. Mater. Chem, Vol. 22, pp. 4278-4281, 2012.
• Kyeongmi Lee, Eiji Ikenaga, Takeharu Sugiyama, Keisuke Kobayashi, Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Eiji Ikenaga, Takeharu Sugiyama, Keisuke Kobayashi, Hideo Hosono. Band alignment of InGaZnO₄/Si interface by hard x-ray photoelectron spectroscopy, J. Appl. Phys, Vol. 112,, pp. 033713-1 - 6, 2012.
• Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono. Advantageous grain boundaries in iron pnictide superconductors, Nat. Commun, Vol. 2, No. 409, pp. 1-6, Aug. 2011.
• Takayoshi Katase, Hidenori Hiramatsu, Vladimir Matias, Chris Sheehan, Yoshihiro Ishimaru, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono. Biaxially textured cobalt-doped BaFe₂As₂ films with high critical current density over 1 MA/cm² on MgO-buffered metal-tape flexible substrates, Appl. Phys. Lett., Vol. 98, pp. 242510-1 - 3, June 2011.
• D.H. Lee, K. Nomura, T. Kamiya, H. Hosono. Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200oC on a Flexible Substrate, IEEE Electron Device Letters, Vol. 32, pp. 1695-1697, 2011.
• K. Abe, N. Kaji, H. Kumomi, K. Nomura, T.Kamiya, M. Hirano, H. Hosono. Simple Analytical Model of On Operation of Amorphous In–Ga–Zn–O Thin-Film Transistors, IEEEE Trans. Electron Dev, Vol. 58, 3463-3471, pp. 3463-3471, 2011.
• Keisuke Ide, Yutomo Kikuchi, Kenji Nomura, Mutsumi Kimura, Toshio Kamiya, Hideo Hosono. Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors, Appl. Phys. Lett, Vol. 99, No. 093507, pp. 1 - 3, 2011.
• Kenji Nomura, Toshio Kamiya, Hideo Hosono. Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects, Appl. Phys. Lett.,, Vol. 99, No. 053505, pp. 1 - 3, 2011.
• Hiroshi Mizoguchi, Toshio Kamiya, Satoru Matsuishi, Hideo Hosono. A germanate transparent conductive oxide, Nature Comm, Vol. 2, No. 470, pp. 1 - 5, 2011.
• Tao Chen, Meng-Yue Wu, Ryoichi Ishihara, Kenji Nomura, Toshio Kamiya, Hideo Hosono, C. I. M. Beenakker. Solid-phase epitaxial growth of (111)-oriented Si film on InGaO₃(ZnO)₅ buffer layer, J Mater Sci: Mater Electron, Vol. 22, pp. 920-923, 2011.
• Kenji Nomura, Toshio Kamiya, Hideo Hosono. Ambipolar Oxide Thin-Film Transistor, Adv. Mater., Vol. 23, pp. 3431-3434, 2011.
• Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono. Electronic Structure and Photovoltaic Properties of n-Type Amorphous In-Ga-Zn-O and p-Type Single Crystal Si Heterojunctions, Electrochemical and Solid-State Letters, Vol. 14, pp. H346-349, 2011.
• Hiroshi Mizoguchi, Toshiaki Kuroda, Toshio Kamiya, Hideo Hosono. LaCo₂B₂: A Co-Based Layered Superconductor with a ThCr₂Si₂-Type Structure, Phys. Rev. Lett., Vol. 106, pp. 237001-1 ～ 237001-4, 2011.
• Kenji Nomura, Toshio Kamiya, Eiji Ikenaga, Hiroshi Yanagi, Keisuke Kobayashi, Hideo Hosono. Depth analysis of subgap electronic states in amorphous oxide semiconductor, a_-In_-Ga_-Zn_-O, studied by hard x_-ay photoelectron spectroscopy, JOURNAL OF APPLIED PHYSICS, Vol. 109, p. 073726, 2011.
• Lijie Shao, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Operation Characteristics of Thin-Film Transistors Using Very Thin Amorphous In-Ga-Zn-O Channels, Electrochemical and Solid-State Letters, Vol. 14, pp. 197-200, 2011.
• Hideo Hosono, Yoichi Ogo, Hiroshi Yanagi, Toshio Kamiya. Bipolar Conduction in SnO Thin Films, Electrochemical and Solid-State Letters, Vol. 14, pp. 13-16, 2011.
• Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Fabrication of Atomically Flat ScAlMgO₄ Epitaxial Buffer Layer and Low-Temperature Growth of High-Mobility ZnO Films, Cryst. Growth & Des., vol. 10, pp. 1084-1089, 2010.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Origin of denite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors, Appl. Phys. Lett., vol. 96, pp. 122103-1 - 3, 2010.
• Yutomo Kikuchi, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing, Thin Solid Films, vol. 518, pp. 3017-3021, 2010.
• Kenji Nomura, Toshio Kamiya, Yutomo Kikuchi, Masahiro Hirano, Hideo Hosono. Comprehensive studies on the stabilities of a-In-Ga-Zn-O based thin film transistor by constant current stress, Thin Solid Films, Vol. 518, pp. 3012-3016, 2010.
• Dong Hee Lee, Ken-ichi Kawamura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Steady-state photoconductivity of amorphous In–Ga–Zn–O, Thin Solid Films, vol. 518, pp. 3000-3003, 2010.
• Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono. Josephson junction in cobalt-doped BaFe₂As₂ epitaxial thin lms on (La,Sr)(Al,Ta)O₃ bicrystal substrates, Appl. Phys. Lett., vol. 96, pp. 142507-1 - 3, 2010.
• Tomomasa Shinozaki, Kenji Nomura, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Fabrication of GaN epitaxial thin film on InGaZnO₄ single-crystalline buffer layer, Thin Solid Films, vol. 518, pp. 2996-2999, 2010.
• Hidenori Hiramatsu, Toshio Kamiya, Tetsuya Tohei, Eiji Ikenaga, Teruyasu Mizoguchi, Yuichi Ikuhara, Keisuke Kobayashi, Hideo Hosono. Origins of Hole Doping and Relevant Optoelectronic Properties of Wide Gap p-Type Semiconductor, LaCuOSe, J. Am. Chem. Soc., vol. 132, pp. 15060-15067, 2010.
• Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits, APPLIED PHYSICS LETTERS, vol. 97, p. 072111, 2010.
• Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. High Critical Current Density 4 MA/cm² in Co-doped BaFe₂As₂ Epitaxial Films Grown on (La,Sr)(Al,Ta)O₃ Substrates without Buffer Layers, Applied Physics Express, Vol. 3, p. 063101, 2010.
• Mutsumi Kimura, Toshio Kamiya, Takashi Nakanishi, Kenji Nomura, Hideo Hosono. Intrinsic carrier mobility in amorphous InGaZnO thin-film transistors determined by combined field-effect technique, APPLIED PHYSICS LETTERS, vol. 96, p. 262105, 2010.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory, Phys. Status Solidi A, vol. 207, pp. 1698-1703, 2010.
• Hidenori Hiramatsu, Toshio Kamiya, Kazushige Ueda, Masahiro Hirano, Hideo Hosono. Origin of high-density hole doping and anisotropic hole transport in a wide gap layered semiconductor LaCuOSe studied by first-principles calculations, Phys. Status Solidi A, vol. 207, pp. 1636–1641, 2010.
• Kenji Nomura, Takashi Aoki, kiyosi Nakamura, Toshio Kamiya, Takashi Nakanishi, Takayuki Hasegawa, Mutsumi Kimura, Takeo Kawase, Masahiro Hirano, Hideo Hosono. Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In-Ga-Zn-O and p-type poly-(9,9-dioctylfluorene-co-bithiophene)thin-film transistors, APPLIED PHYSICS LETTERS, vol. 96, pp. 263509-1～263509-3, 2010.
• Y. Nishio, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono. Short-channel nanowire transistor using a nanoporous crystal semiconductor 12CaO•7Al₂O₃, Materials Science and Engineering B, vol. 173, p. 3740, 2010.
• Hiroshi Yanagi, Katsutoshi Fukuma, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Electrical and magnetic properties of quaternary compounds LnMnPO (Ln = Nd, Sm, Gd) with ZrCuSiAs-type structure, Materials Science and Engineering B, vol. 173, pp. 47-50, 2010.
• Masashi Miyakawa, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Fabrication and electron transport properties of epitaxial lms of electron-doped 12CaO•7Al₂O₃ and 12SrO•7Al₂O₃, Journal of Solid State Chemistry, vol. 183, pp. 385-391, 2010.
• Toshio Kamiya, Hidenori Hiramatsu, Takayoshi Katase, Masahiro Hirano, Hideo Hosono. Impurities in FeAs-based superconductor, SrFe₂As₂, studied by first-principles calculations, Materials Science and Engineering B, vol. 173, pp. 244-247, 2010.
• Toshio Kamiya, Hiroshi Yanagi, Takumi Watanabe, Masahiro Hirano, Hideo Hosono. Electronic structures of MnP-based crystals: LaMnOP, BaMn₂P₂, and KMnP, Materials Science and Engineering B, vol. 173, pp. 239-243, 2010.
• Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono. DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe₂As₂ epitaxial films, Supercond. Sci. Technol., vol. 23, pp. 082001-1 - 4, 2010.
• Dong Hee Lee, Ken-ichi Kawamura, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Large Photoresponse in Amorphous InGaZnO and Origin of Reversible and Slow Decay, Electrochemical and Solid-State Letters, vol. 13, pp. H324-H327, 2010.
• Kenji Nomura, Toshio Kamiya, Hideo Hosono. Interface and bulk effects for bias-light-illumination instability in amorphous-In-Ga-Zn-O thin-film transistors, J. Soc. Inf. Display, vol. 18, p. 789, 2010.
• Katsuro Hayashi, Hiroki Muramatsu, Satoru Matsuishi, Toshio Kamiya, Hideo Hosono. Humidity-Sensitive Electrical Conductivity in Ca₁₂Al_14-xSi_xO₃₂Cl_2+x (0 < x < 3.4) Ceramics, Electrochem. Solid-State Lett., 12, 2, J11-J13, Feb. 2009.
• Hiroshi Yanagi, Ki-Beom Kim, Ikue Koizumi, Maiko Kikuchi, Hidenori Hiramatsu, Masashi Miyakawa, Toshi Kamiya, Masahiro Hirano, Hideo Hosono. Low Threshold Voltage and Carrier Injection Properties of Inverted Organic Light-Emitting Diodes with [Ca₂₄Al₂₈O₆₄]⁴⁺(4e^-)Cathode and Cu_2-xSe Anode, J.Phys.Chem.C,, vol. 113, pp. 18379-18384, 2009.
• Kentaro Kayanuma, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Epitaxial film growth and optoelectrical properties of layered semiconductors, LaMnXO (X = P, As, and Sb), J. Appl. Phys., Vol. 105, p. 073903, 2009.
• Hiroshi Yanagi, Takumi Watanabe, Katsuaki Kodama, Satoshi Iikubo, Shin-ichi Shamoto, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Antiferromagnetic bipolar semiconductor LaMnPO with ZrCuSiAs-type structure, J. Appl. Phys, vol. 105, pp. 093936-1 - 8, 2009.
• Hideyuki Omura, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. First-principles study of native point defects in crystalline indium gallium zinc oxide, J. Appl. Phys., vol. 105, pp. 093712-1 - 8, 2009.
• Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Heteroepitaxial film growth of layered compounds with the ZrCuSiAs-type and ThCr2Si2-type structures: From Cu-based semiconductors to Fe-based superconductor, Physica C, vol. 469, pp. 657–666, 2009.
• Y.Adachi, S-W.Kim, T.Kamiya, H.Hosono. Bistable resistance switching in surface –oxidized C12A7:e-single-crystal, Mater.Sci. & Eng.B, vol. 161, pp. 76 -79, 2009.
• Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO₄, Mater. Sci. & Eng. B, vol. 161, pp. 66-70, 2009.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Electronic structure of the amorphous oxide semiconductor a-InGaZnO4–x: Tauc–Lorentz optical model and origins of subgap states, Phys. Status Solidi A, vol. 206, pp. 860-867, 2009.
• Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors, Appl. Phys. Lett., vol. 95, pp. 013502-1 - 3, 2009.
• Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Water-induced superconductivity in SrFe₂As₂, Phys. Rev. B, vol. 80, pp. 052501-1 - 4, 2009.
• Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, Hideo Hosono. Tin monoxide as an s-orbital-based p-type semiconductor:Electronic structures and TFT application, Physics Status Solidi A, pp. 1-5, 2009.
• Hitoshi Sugawara, Kenji Ishida, Yusuke Nakai, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono. Two-Dimensional Spin Dynamics in the Itinerant Ferromagnet LaCoPO Revealed by Magnetization and ³¹P-NMR Measurements, Journal of the Physical Society of Japan, vol. 78, pp. 113705-113708, 2009.
• Kosuke Matsuzaki, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Effects of post-annealing on (110) Cu₂O epitaxial lms and origin oflow mobility in Cu₂O thin-film transistor, phys. stat. sol. (a), vol. 206, pp. 2192-2197, 2009.
• Takayoshi Katase, Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped BaFe₂As₂, Solid State Commun., vol. 149, pp. 2121-2124, 2009.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping, J. Displ. Technol., vol. 5, p. 273, 2009.
• Ayumu Sato, Katsumi Abe, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor, Appl. Phys. Lett., Vol. 94, pp. 133502-1 - 3, 2009.
• Y. Kamihara, T. Watanabe, T. Nomura, S. W. Kim, T. Kamiya, M. Hirano, H. Hosono. Electromagnetic properties of undoped LaFePnO (Pn = P, As), J. Phys. Conf., vol. 150, p. 052090, 2009.
• Ayumu Sato, Mikio Shimada, Katsumi Abe, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Amorphous In.Ga.Zn-O thin-film transistor with coplanar homojunction structure, Thin Solid Films, vol. 518, pp. 1309-1313, 2009.
• Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, Hideo Hosono. Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application, Phys. Status Solidi A, vol. 206, pp. 2187-2191, 2009.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model, J. Display Technol., Vol. 5, 2009.
• Hidenori Hiramatsu, Yoichi Kamihara, Hiroshi Yanagi, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Layered mixed-anion compounds: Epitaxial growth, active function exploration, and device application, J. Europ. Ceram. Soc., Vol. 29, pp. 245-253, 2009.
• K Igawa, K Arii, Y Takahashi, H Okada, H Takahashi, Y Kamihara, M Hirano, H Hiramatsu, T Watanabe, H Yanagi, T Kamiya, H Hosono, K Matsubayashi, Y. Uwatoko. Pressure effects on Tc of Iron-based Layered Superconductor LaTMPO (TM = Fe, Ni), J. Phys. Conf., vol. 150, pp. 052075-052078, 2009.
• TOSHIO KAMIYA. ZnO-Based Semiconductors as Building Blocks for Active Devices, MRS Bulletin, 33, 1061-1066, Nov. 2008.
• TOSHIO KAMIYA. Electronic structure of oxygen deficient amorphous oxide semiconductr a-InGaZnO4-x: Optical analysis and first-principle calculations, phys. stat. solidi (c), 5, 3098, June 2008.
• TOSHIO KAMIYA. Interface electronic structures of zin oxide and metals: First-principle study, phys. stat. solidi (a), 205, 1929, June 2008.
• Satoru Matsuishi, Sung Wng Kim, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Localized and Delocalized Electrons in Room-Temperature Stable Electride [Ca24Al28O64]4+(O2-)2-x(e-)2x: Analysis of Optical Reflectance Spectra, Journal of Physical Chemistry C, Vol. 112, No. 12, pp. 4573-4760, Apr. 2008.
• Hideo Hosono, SungWng Kim, Masashi Miyakawa, Satoru Matsuishi, Toshio Kamiya. Thin film and bulk fabrication of room-tenperature-stable electride C12A7:e^- utilizing reduced amorphous 12CaO·7Al₂O₃(C12A7), J. Non-Cryst. Sol., Volume 354, Page 2772-2776, Apr. 2008.
• N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, TOSHIO KAMIYA, H. Hosono. Zn-In-O based thin-film transistors: Compositional dependence, phys. stat. solidi (a), Vol. 205, pp. 1915-1919, 2008.
• Kosuke Matsuzaki, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Epitaxial growth of high mobility Cu₂O thin films and application to p-channel thin film transistor, Appl. Phys. Lett., Vol. 93, pp. 202107-1-3, 2008.
• Hidenori Hiramatsu, Ikue Koizumi, Ki-Beom Kim, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Noriaki Matsunami, Hideo Hosono. Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors, J. Appl. Phys., Vol. 104, p. 113723, 2008.
• Hironari OKADA, Yuki TAKAHASHI, Kazumi IGAWA, Kazunobu ARII, Hiroki TAKAHASHI, Takumi WATANABE, Hiroshi YANAGI, Yoichi KAMIHARA, Toshio KAMIYA, Masahiro HIRANO, Hideo HOSONO, Satoshi NAKANO, Takumi KIKEGAWA. Pressure effects on superconducting and structural properties for nickel-based superconductors LaNiXO (X = P and As), J. Phys. Soc. Jpn. Suppl. C, Vol. 77, pp. 119-120, 2008.
• Kenji Nomura, Toshio Kamiya, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono. Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing, Appl. Phys. Lett., Vol. 93, pp. 192107-1～192107-3, 2008.
• Yoichi Kamihara, Hidenori Hiramatsu, Masahiro Hirano, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono. Electronic and magnetic properties of layered LnFePO (Ln=La and Ce), Journal of Physics and Chemistry of Solids, Vol. 69, pp. 2916-2918,, 2008.
• Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO, Appl. Phys. Lett, Vol. 93, p. 162504, 2008.
• Katsuro Hayashi, Naoto Ueda, Satoru Matsuishi, Masahiro Hirano, Toshio Kamiya, Hideo Hosono. Solid State Syntheses of 12SrO·7Al₂O₃ and Formation of High Density Oxygen Radical Anions, O^-and O₂^-, Chemstry of Materials,, Vol. 20, pp. 5987-5996, 2008.
• Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Superconductivity in Epitaxial Thin Films of Co-Doped SrFe2As2 with Bilayered FeAs Structures and their Magnetic Anisotropy, Appl. Phys. Express, Vol. 1, p. 101702, 2008.
• Hiroshi Yanagi, Maiko Kikuchi, Ki-Beom Kim, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Low and small resistance hole-injection barrier for NPB realized by wide-gap p-type degenerate semiconductor, LaCuOSe:Mg, Organic Electronics, Vol. 9, pp. 890-894, 2008.
• Takumi Watanabe, Hiroshi Yanagi, Yoichi Kamihara, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Nickel-based layered superconductor, LaNiOAs, J. Sol. State Chem, Vol. 181, pp. 2117-2120, 2008.
• Yoshimasa Nishio, Kenji Nomura, Masashi Miyakawa, Katsuro Hayashi, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Fabrication and Transport Properties of 12CaO•7Al₂O₃ (C12A7) Electride Nanowire, European Mater. Res. Soc. Symp. Spring Meeting, phys. stat. solidi (a), Vol. 205, pp. 2047-2051, 2008.
• Youichi Ogo, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Amorphous Sn-Ga-Zn-O channel thin-film transistors, phys. stat. solidi (a), Vol. 205, pp. 1920-1924, 2008.
• K. Nomura, T. Kamiya, H. Ohta, K. Shimizu, M. Hirano, H. Hosono. Relationship between non-localized tail states and carrier transport in amorphous oxide semiconductor, In-Ga-Zn-O, phys. stat. solidi (a), Vol. 205, pp. 1910-1914, 2008.
• Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. p-channel thin-film transistor using p-type oxide semiconductor, SnO, Appl. Phys. Lett., Vol. 93, pp. 032113-1～032113-3, 2008.
• K. Tajima, K. Nomura, T. Kamiya, Hiroshi Yanagi, H. Hosono. Interface electronic structures of zin oxide and metals: First-principle study, physica status solidi (a), Vol. 205, pp. 1929-1933, 2008.
• Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Noriaki Matsunami, Ken-ichi Shimizu, Hideo Hosono. Electrical and optical properties of copper-based chalcogenide thin films deposited by pulsed laser deposition at room temperature: Toward p-channel thin film transistor fabricable at room temperature, physica status solidi (a), Vol. 205, pp. 2007-2012, 2008.
• Hiroshi Yanagi, Ryuto Kawamura, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Tetsuya Nakamura, Hitoshi Osawa, Hideo Hosono. Itinerant ferromagnetism in the layered crystals LaCoOX (X = P,As), Physical Review B, Vol. 77, p. 224431, 2008.
• Yoichi Kamihara, Masahiro Hirano, Hiroshi Yanagi, Toshio Kamiya, Yuji Saitoh, Eiji Ikenaga, Keisuke Kobayashi, Hideo Hosono. Electromagnetic properties and electronic structure of the iron-based layered superconductor LaFePO, Phys. Rev. B, Vol. 77, pp. 214515-1～214515-9, 2008.
• Takashi Mine, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono. Nickel-based phosphide superconductor with infinite-layer structure, BaNi2P2, Solid State Communications, Vol. 147, pp. 111-113, 2008.
• Kenji Nomura, Eiji Ikenaga, Ke Yang, Keisuke Kobayashi, Masahiro Hirano, Kenji Nomura, Toshio Kamiya, Hiroshi Yanagi, Eiji Ikenaga, Ke Yang, Keisuke Kobayashi, Masahiro Hirano, Hideo Hosono. Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy, Appl. Phys. Lett., Vol. 92, p. 202117, 2008.
• Yasuhiro Shimura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes, Thin Solid Films, Vol. 516, pp. 5899-5902, 2008.
• Takashi Mine, Hiroshi Yanagi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Control of carrier concentration and surface flattening of CuGaO2 itaxial films for a p-channel transparent transistor, Thin Solid Films, Vol. 516, pp. 5790-5794, 2008.
• Kentaro Kayanuma, Ryuto Kawamura, Hidenori Hiramatsu, Hiroshi Yanagi, Masahiro Hirano, Toshio Kamiya, Hideo Hosono. Heteroepitaxial growth of layered semiconductors, LaZnOPn (Pn=P and As), Thin Solid Films, Vol. 516, pp. 5800-5804, 2008.
• Madambi K. Jayaraj, Kachirayil J. Saji, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application, J. Vac. Sci. Technol.B, Vol. 26, p. 495, 2008.
• Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Amorphous oxide channel TFTs, Thin Solid Films, Vol. 516, p. 1516, 2008.
• Hiroshi Yanagi, Toshio Kamiya, Kazushige Ueda, Masahiro Hirano, Hideo Hosono. Crystal Structures, Optoelectronic Properties, and Electronic Structures of Layered Oxychalcogenides MCuOCh (M = Bi, La; Ch = S, Se, Te): Effects of Electronic Configurations of M3+ Ions, Chem. Mater., Vol. 20, p. 326, 2008.
• Toshio Kamiya, Kenji Nomura, Masahiro Hirano, Hideo Hosono. Electronic structures of oxygen deficient amorphous oxide semiconductor, a-InGaZnO_4-x: Optical analyses and first-principle calculations, physica status solidi (c), Vol. 5, pp. 3098-3100, 2008.
• Hsing-Hung Hsieh, Toshio Kamiya, Kenji Nomura, Hideo Hosono, Chung-Chih Wu. Modeling of amorphous InGaZnO₄ thin film transistors and their subgap density of states, Appl. Phys. Lett., Vol. 92, p. 133503, 2008.
• Mutsumi Kimura, Takashi Nakanishi, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Trap densities in amorphous-InGaZnO₄ thin-film transistors, Appl. Phys. Lett., Vol. 92, p. 133512, 2008.
• Takatoshi Nomura, Sung Wng Kim, Satoru Matsuishi, Takatoshi Nomura, Yoshiki Kubota, Masaki Takata, Katsuro Hayashi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Metallic state in a Lime-Alumina Compound with Nanoporous Structure, Nano Letters, Volume 7, pp. 1138-1143, May 2007.
• Ken-ichi Kawamura, Takukazu Otsuka, Masahiro Hirano, Toshio Kamiya, Hideo Hosono. Development of latent images due to transient free carrier electrons by femtosecond laser pulses and its application to grating shape trimming, Appl. Phys. Lett., Vol. 90, pp. 011107, Jan. 2007.
• Takumi Watanabe, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Hidenori Hiramatsu, Masahiro Hirano, Hideo Hosono. Nickel-Based Oxyphosphide Superconductor with a Layered Crystal Structure, LaNiOP, Inorg. Chem., No. 46, pp. 7719-7721, 2007.
• Yoshitake Toda, Hiroshi Yanagi, Eiji Ikenaga, Jung Jin Kim, Masaaki Kobata, Sigenori Ueda, Toshio Kamiya, Masahiro Hirano, Keisuke Kobayashi, Hideo Hosono. Work function of a room- temperature stable electride [Ca24Al28O64]4+(e-)4: a low intrinsic value (2.4 eV) and bias-induced negative work function, Adv. Mater., Vol. 19, pp. 3564, 2007.
• Hayato Kamioka, Takashi Yamaguchi, Masahiro Hirano, Toshio Kamiya, Hideo Hosono. Structural and photo-induced properties of Eu²⁺-doped Ca₂ZnSi₂O₇: A red phosphor for white light generation by blue ray excitation, J. Luminescence, Vol. 122-123, pp. 355, 2007.
• Youichi Ogo, Hiroshi Yanagi, Toshio Kamiya, Kenji Nomura, Masahiro Hirano, Hideo Hosono. Epitaxial film growth, optical, electrical, and magnetic properties of layered oxide In3FeTi2O10, JOURNAL OF APPLIED PHYSICS, Vol. 101, pp. 103714, 2007.
• Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Masahiro Hirano, Maiko Kikuchi, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono. Heavy hole doping of epitaxial thin films of a widegap p-type semiconductor, LaCuOSe, and analysis of the effective mass, Appl. Phys. Lett., Vol. 91, pp. 012104, 2007.
• Ki-Beom Kim, Maiko Kikuchi, Masashi Miyakawa, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Photoelectron Spectroscopic Study of C12A7:e- and Alq3 Interface: The Formation of a Low Electron-Injection Barrier, J. Phys. Chem. C, Vol. 111, No. 24, pp. 8403, 2007.
• Yoichi Kamihara, Hidenori Hiramatsu, Masahiro Hirano, Ryuto Kawamura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono. Iron-Based Layered Superconductor: LaOFeP, J. Am. Chem. Soc., Vol. 128, No. 31, pp. 10012-10013, July 2006.
• Hideo HOSONO, Toshio KAMIYA, Masahiro HIRANO. Function Cultivation of Transparent Oxides Utilizing Built-in Nanostructure, Bulletin of Chemical Society of Japan, Vol. 79, pp. 1-24, 2006.
• Kazushige Ueda, Hidenori Hiramatsu, Masahiro Hirano, Toshio Kamiya, Hideo Hosono. Wide-gap layered oxychalcogenide semiconductors: materials, electronic structures and optoelectronic properties, Thin Solid Films submitted, Vol. 496, pp. 8-16, 2006.
• M. Ofuji, K. Abe, N. Kaji, R. Hayashi, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, H. Hosono. Integrated circuits based on amorphous indium-gallium-zinc-oxide-channel thin-film transistors, ECS Transactions, Vol. 3, pp. 293-309, 2006.
• K. MATSUZAKI, Hiroshi Yanagi, Toshio Kamiya, H. HIRAMATSU, K. NOMURA, M. HIRANO, H. HOSONO. Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga₂O₃, Appl. Phys. Lett., Vol. 88, pp. 092106-1～092106-3, 2006.
• M. Miyakawa, H. Kamioka, M. Hirano, T. Kamiya, H. Hosono. Photoluminescence of Au⁺ formed in 12CaO·7Al₂O₃ single crystal by Au⁺-implantation, Nuclear Instruments and Methods in Physics Research B, Vol. 250, pp. 368-371, 2006.
• T. Kamiya, H. Hosono. Recent progress in device applications of transparent oxide semiconductors, Proceedings of International Conference on Optoelectronic Materials and Thin Films for Advanced Technology (OMTAT 2005) (24-27, Oct., 2005, Kochi, India), pp. 217-234, 2006.
• M. Miyakawa, M. Hirano, T. Kamiya, H. Hosono. Large conductivity enhancement in polycrystalline 12CaO·7Al₂O₃ thin films induced by extrusion of clathrated O₂ ions by hot Au⁺ implantation and ultraviolet light illumination, Nuclear Instruments and Methods in Physics Research B, Vol. 250, pp. 155-158, 2006.
• Ken-ich Kawamura, Masahiro Hirano, Toshio Kamiya, Hideo Hosono. Femtosecond-laser-encoded distributed-feedback color center laser in lithium fluoride single crystal, J. Non-Cryst. Sol., Vol. 352, pp. 2347-2350, 2006.
• Hisato Yabuta, Masafumi Sano, Katsumi Abe, Toshiaki Aiba, Tohru Den, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering, Appl. Phys. Lett., Vol. 89, pp. 112123-1 - 3, 2006.
• Hiroshi Yanagi, Shuichi Ohno, Toshio Kamiya, Hidenori Hiramatsu, Masahiro Hirano, Hideo Hosono. Magnetic and carrier transport properties of Mn-doped p-type semiconductor LaCuOSe: An investigation of the origin of ferromagnetism, J. Appl. Phys., Vol. 100, pp. 033717-1 - 5, 2006.
• Hidenori Hiramatsu, Hayato Kamioka, Kazushige Ueda, Hiromichi Ohta, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Opto-electronic properties and light-emitting device application of widegap layered oxychalcogenides: LaCuOCh (Ch = chalcogen) and La₂CdO₂Se₂, phys. stat. sol. (a), Vol. 203, pp. 2800-2811, 2006.
• Masashi Miyakawa, Hayato Kamioka, Masahiro Hirano, Toshio Kamiya, Peter V. Sushko, Alexander L. Shluger, Noriaki Matsunami, Hideo Hosono. Photoluminescence from Au ion-implanted nanoporous single-crystal 12CaO·7Al₂O₃, Phys. Rev. B, Vol. 73, pp. 2005108-1 - 7, 2006.
• T. Kamiya, Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, M. Hirano, H. Hosono. Self-Adjusted, Three-Dimensional Lattice-Matched Buffer Layer for Growing ZnO Epitaxial Film: Homologous Series Layered Oxide, InGaO₃(ZnO)₅, Cryst. Growth Des., Vol. 6, pp. 2451-2456, 2006.
• Masahiro Miyauchi, Hiromasa Tokudome, Yoshitake Toda, Toshio Kamiya, Hideo Hosono. Electron field emission from TiO₂ nanotube arrays synthesized by hydrothermal reaction, Appl. Phys. Lett., Vol. 89, pp. 043114-1～043114-3, 2006.
• Masahiro Hirano, Yoshitake Toda, Sung Wng Kim, Katsuro Hayashi, Masahiro Hirano, Toshio Kamiya, Hideo Hosono, Takeshi Haraguchi, Hiroshi Yasuda. Intense thermal field electron emission from room temperature stable electride, Applied Physics Letter, Volume 87, pp. 254103-1～254103-3, Dec. 2005.
• Toshio Kamiya, Kazushige Ueda, Hidenori Hiramatsu, Hayato Kamioka, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono. Two-dimensional electronic structure and multiple excitonic states in layered oxychalcogenide semiconductors, LaCuOCh (Ch=S, Se, Te): Relativistic ab-initio study, Thin Solid Films, Vol. 486, pp. 98-103, 2005.
• Youichi Ogo, Kenji Nomura, Hiroshi Yanagi, Hiromichi Ohta, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Growth and structure of heteroepitaxial thin films of homologous compounds RAO3(MO)m by reactive solid-phase epitaxy: applicability to a variety of materials and epitaxial template layers, Thin Solid Films, Vol. 496, pp. 64, 2005.
• Kosuke Matsuzaki, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor, Thin Solid Films, Vol. 496, pp. 37, 2005.
• Toshio Kamiya, Shouzou Aiba, Masashi Miyakawa, Kenji Nomura, Satoru Matsuishi, Katsuro Hayashi, Kazushige Ueda, Masahiro Hirano, Hideo Hosono. Field-induced current modulation in nanoporous semiconductor, electron-doped 12CaO center dot 7Al(2)O(3), CHEMISTRY OF MATERIALS, Vol. 17, No. 25, pp. 6311-6316, 2005.
• Hideo Hosono, Toshiob Kamiya, Kenji Nomura. Transparent High Performance FET using Amorphous Oxide Semiconductors, Digest of Technical papers of AM-LCD, pp. 83, 2005.
• Akihiro Takagi, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4, Thin Solid Films, Vol. 486, pp. 38-41, 2005.
• Yujiro Takeda, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film, Thin Solid Films, Vol. 486, pp. 28-32, 2005.
• Masashi Miyakawa, Yoshitake Toda, Katsuro Hayashi, Masahiro Hirano, Toshio Kamiya, Noriaki Matsunami, Hideo Hosono. Formation of inorganic electride thin films via site-selective extrusion by energetic inert gas ions, J. Appl. Phys., Vol. 79, pp. 023510, 2005.
• Ken-ichi Kawamura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Interaction of femto/UV lasers with transparent dielectrics, Materials Processing for Properties and Performance (MP3) (Ed. K.A. Khor, K. Hanada, T. Sano, A. Matsumuro and T. Eiju), Vol. 4, pp. 285, 2005.
• T. Kamiya, S. Aiba, M. Miyakawa, K. Nomura, S. Matsuishi, K. Hayashi, K. Ueda, M. Hirano, H. Hosono. Field-Induced Current Modulation in Nanoporous Semiconductor, Electron-Doped 12CaO・7Al2O3, Chem. Mater., Vol. 17, pp. 6311, 2005.
• Y. Toda, S.W. Kim, K. Hayashi, M. Hirano, T. Kamiya, H. Hosono, T. Haraguchi, H. Yasuda. Intense Thermal Field Electron Emission From Room Temperature Stable Electride, Appl. Phys. Lett., Vol. 87, pp. 254103, 2005.
• H. Hiramatsu, K. Ueda, H. Ohta, T. Kamiya, M. Hirano, H. Hosono. Excitonic Blue Luminescence From P-LaCuOSe/N-InGaZn5O8 Light-Emitting Diode at Room Temperature, Appl. Phys. Lett., Vol. 87, pp. 211107, 2005.
• K. Hayashi, Y. Toda, T. Kamiya, M. Hirano, M. Yamanaka, I. Tanaka, T. Yamamoto, H. Hosono. Electronic Insulator-Conductor Conversion in Hydride Ion-Doped 12CaO・7Al2O3 by Electron-Beam Irradiation, Appl. Phys. Lett., Vol. 86, pp. 022109, 2005.
• T. Kamiya, S. Narushima, H. Mizoguchi, K. Shimizu, K. Ueda, H. Ohta, M. Hirano, H. Hosono. Electrical properties and structure of p-type amorphous oxide semiconductor xZnO·Rh2O3, Adv. Funct. Mater., Vol. 15, pp. 968-974, 2005.
• Masashi Miyakawa, Yoshitake Toda, Katsuro Hayashi, Masahiro Hirano, Toshio Kamiya, Noriaki Matsunami, Hideo Hosono. Formation of inorganic electride thin films via site-selective extrusion by energetic inert gas ions, J. Appl. Phys., Vol. 97, pp. 023510, 2005.
• H Kamioka, H Hiramatsu, M Hirano, K Ueda, T Kamiya, H. Hosono. Excitonic properties related to valence band levels split by spin-orbit interaction in layered oxychalcogenide LaCuOCh(Ch=S,Se), J. Luminescence, Vol. 112, pp. 66, 2005.
• Toshio Kamiya, Hideo Hosono. Electronic structures and device applications of transparent oxide semiconductors: What is the real merit of oxide semiconductors?, Int. J. Appl. Ceram. Technol., Vol. 2, pp. 285-294, 2005.
• H. Mizuta, Y. Furuta, T. Kamiya, Y.T. Tan, Z.A.K. Durrani, S. Amakawa, K. Nakazato, H. Ahmed. Nanosilicon for single-electron devices, Current Applied Physics, Vol. 4, pp. 98-101, Apr. 2004.  公式リンク  
  
• Masashi Miyakawa, Katsuro Hayashi, Yoshitake Toda, Toshio Kamiya, Masahiro Hiirano, Hideo Hosono. Persistent electronic conduction in 12CaO 7Al2O3 thin films produced by Ar ion implantation: Selective kick-out effect leads to electride thin films, Mater. Res. Soc. Symp. Proc., Vol. 811, pp. E2.7, 2004.
• Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Carrier transport of extended and localized states in InGaO₃(ZnO)₅, Mater. Res. Soc. Symp. Proc., Vol. 811, pp. E2.9, 2004.
• Hidenori Hiramatsu, Kazushige Ueda, Toshio Kamiya, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono. Synthesis of Single-Phase Layered Oxychalcogenide La₂CdO₂Se₂: Crystal Structure, Optical and Electrical Properties, J. Mater. Chem., Vol. 14, pp. 2946, 2004.
• H. Hiramatsu, K. Ueda, K. Takafuji, H. Ohta, M. Hirano, T. Kamiya, H. Hosono. Degenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln = La, Pr and Nd; Ch = S or Se), Appl. Phys. A, Vol. 79, pp. 1521, 2004.
• H. Hiramatsu, K. Ueda, K. Takafuji, H. Ohta, M. Hirano, T. Kamiya, H. Hosono. Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy, Appl. Phys. A, Vol. 79, pp. 1517, 2004.
• Hidenori Hiramatsu, Kazushige Ueda, Toshio Kamiya, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono. Optical Properties and Two-Dimensional Electronic Structure in Wide-Gap Layered Oxychalcogenide: La₂CdO₂Se₂, J. Phys. Chem. B, Vol. 108, pp. 17344, 2004.
• Kenji Nomura, Hiromichi Ohta, Akihiro Takagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Room-Temperature Fabrication of Transparent Flexible Thin Film Transistors Using Amorphous Oxide Semiconductor, Nature, Vol. 488, pp. 432, 2004.
• Kenji Nomura, Hiromichi Ohta, Toshiyuki Suzuki, Chizuru Honjyo, Kazushige Ueda, Toshio Kamiya, Masahiro Orita, Yuichi Ikuharac, Masahiro Hirano, Hideo Hosono. Growth Mechanism for Single-Crystalline Thin Film of InGaO3(ZnO)5 by Reactive Solid-Phase Epitaxy, J. Appl. Phys., Vol. 95, pp. 5532, 2004.
• Kazushige Ueda, Hidenori Hiramatsu, Hiromichi Ohta, Masahiro Hirano, Toshio Kamiya, Hideo Hosono. Single-atomic-layered quantum wells built in wide-gap semiconductors, LnCuOCh (Ln=lanthanide, Ch=chalcogen), Phys. Rev. B, Vol. 69, pp. 155305, 2004.
• Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Carrier Transport in Transparent Oxide Semiconductor with Intrinsic Structural Randomness Probed Using Single-Crystalline InGaO3(ZnO)5 Films, Appl. Phys. Lett., Vol. 85, pp. 1993, 2004.
• Kenij Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. All oxide transparent MISFET using high-k dielectrics gates, Microelectronic Engineering, Vol. 72, pp. 294, 2004.
• H. Kamioka, H. Hiramatsu, H. Ohta, H. Hirano, K. Ueda, T. Kamiya, H. Hosono. Enhancement of third-order optical nonlinearity due to room temperature exciton in layered compounds LaCuOS/Se, Appl. Phys. Lett., Vol. 84, pp. 879, 2004.
• Takuya Sugawara, Wataru Futako, Toshio Kamiya, Isamu Shimizu. High electric field response of wide bandgap a-Si:H photodiodes probed by transient current measurements, J. Non-Cryst. Sol., Vol. 338-340, pp. 802, 2004.
• Hidenori Hiramatsu, Hiromichi Ohta, Toshiyuki Suzuki, Chizuru Honjo, Yuichi Ikuhara, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Mechanism for Heteroepitaxial Growth of Transparent P-type Semiconductor: LaCuOS by Reactive Solid-Phase Epitaxy, Crystal Growth & Design, Vol. 4, pp. 301-307, 2004.
• Hidenori Hiramatsu, Kazushige Ueda, Kouhei Takafuji, Hiromichi Ohta, Masahiro Hirano, Toshio Kamiya, Hideo Hosono. Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln= La - Nd; Ch= S - Te) by reactive solid-phase epitaxy, J. Mater. Res., Vol. 19, pp. 2137, 2004.
• Toshio Kamiya, Kazushige Ueda, Hidenori Hiramatsu, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono. Two-Dimensional Electronic Structures in Layered Oxychalcogenide Semiconductors, LaCuOCh (Ch=S, Se, Te) and La2CdO2Se2, Mater. Res. Soc. Symp. Proc., Vol. 811, pp. E4.10, 2004.
• H. Ohta, K. Nomura, H. Hiramatsu, T. Suzuki, K. Ueda, T. Kamiya, M. Hirano, Y. Ikuhara, H. Hosono. High-quality epitaxial film growth of transparent oxide semiconductors, J. Ceram. Soc. Jpn. Suppl., Vol. 112, pp. S602, 2004.
• Toshio Kamiya, Hiromichi Ohta, Hidenori Hiramatsu, Katsuro Hayashi, Kenji Nomura, Satoru Matsuishi, Kazushige Ueda, Masahiro Hirano, Hideo Hosono. Natural nanostructures in ionic semiconductors, Microelectron. Eng., Vol. Apr-73, pp. 620-626, 2004.
• Y. Toda, S. Matsuishi, K. Hayashi, K. Ueda, T. Kamiya, M. Hirano, H. Hosono. Field emission of electron anions clathrated in subnanometer-sized cages of [Ca24Al28O64]4+(4e-), Adv. Mater., Vol. 16, No. 8, pp. 685, 2004.
• H. KAMIOKA, H. HIRAMATSU, M. HIRANO, K. UEDA, Toshio Kamiya, H. HOSONO. Quantum beat between two excitonic levels split by spin-orbit interactions in the oxychalcogenide LaCuOS, Optics Letter, Vol. 29, No. 14, pp. 1659-1661, 2004.
• Ken-ichi Kawamura, Masahiro Hirano, Toshio Kurobori, Daijyu Takamizu, Toshio Kamiya, HIDEO HOSONO. Femtosecond-laser-encoded distributed-feedback color center laser in lithium fluoride single crystals, Applied Physics Letters, Vol. 84, No. 3, pp. 311-313, 2004.
• T. Kamiya, H. Ohta, M. Kamiya, K. Nomura, K. Ueda, M. Hirano, H. Hosono. Li-doped NiO epitaxial thin film with atomically-flat surface, J. Mater. Res., Vol. 19, pp. 913-920, 2004.
• Ken-ichi Kawamura, Daijyu Takamizuc, Toshio Kuroborib, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Nano-fabrication of optical devices in transparent dielectrics: Volume gratings in SiO2 and DFB Color center laser in LiF, Nuc. Instr. and Met. in Phys. Res. B, Vol. 218, pp. 332, 2004.
• Katsuro Hayashi, Satoru Matsuishi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Photo-Induced Insulator-Semiconductor Transition in 12CaO·7Al2O3 (C12A7), MSR Symposium Proceedings, 747, 247-256, Oct. 2003.
• Satoru Matsuishi, yoshitake toda, masashi miyakawa, KATSURO HAYASHI, TOSHIO KAMIYA, Masahiro Hirano, Isao Tanaka, HIDEO HOSONO. High-Density Electron Anions in a Nanoporous Single Crystal: [Ca₂₄Al₂₈O₆₄]⁴⁺(4e^-), Science, Vol. 301, No. 5633, pp. 626-629, Aug. 2003.
• Hiromichi Ohta, Satoru Narushima, Hiroshi Mizoguchi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Fabrication and characterization of p-n heterojunction diode composed of wide-gap oxide semiconductors, p-ZnRh₂O₄ / n-ZnO, Appl. Phys. Lett., Vol. 82, pp. 823, 2003.
• H. Mizuta, Y. Furuta, T. Kamiya, Y. T. Tan, Z.A.K. Durrani, K. Nakazato, H. Ahmed. Single-electron charging phenomena in nano/polycrystalline silicon point contact transistors, Solid State Phenomena, Vol. 93, pp. 419, 2003.
• Toshio Kamiya, Yoshikazu Furuta, Yong-Tsong Tan, Z.A.K. Durrani, Hiroshi Mizuta, Haroon Ahmed. Effects of Oxidation and Annealing Temperature on Grain Boundary Properties in Polycrystalline Silicon Probed Using Nanometre-Scale Point-Contact Devices, Solid State Phenomena, Vol. 93, pp. 4192, 2003.
• K. Ueda, K. Takafuji, H. Hiramatsu, H. Ohta, T. Kamiya, M. Hirano, H. Hosono. Electrical and optical properties and electronic structures of LnCuOS (Ln=La~Nd), Chem. Mater., Vol. 15, pp. 3692, 2003.
• M. Miyakawa, K. Hayashi, M. Hirano, Y. Toda, T. Kamiya, H. Hosono. The fabrication of highly conductive 12CaO・7Al₂O₃ thin films containing hydride ions by proton implantation, Adv. Mater., Vol. 13, pp. 1100, 2003.
• Y.T. Tan, T. Kamiya, Z.A.K. Durrani, H. Ahmed. Room temperature nanocrystaline silicon single-electron transistors, J. Appl. Phys., Vol. 94, pp. 633, 2003.
• Y. Toda, M. Miyakawa, K. Hayashi, T. Kamiya, M. Hirano, H. Hosono. Thin film fabrication of 12CaO・7Al2O3 with zeolitic structure, Thin Solid Films, Vol. 445, pp. 309-312, 2003.
• H. Hiramatsu, K. Ueda, H. Ohta, M. Hirano, T. Kamiya, H. Hosono. Wide gap P-type degenerate semiconductor: Mg-doped LaCuOSe, Thin Solid Films, Vol. 445, pp. 304-308, 2003.
• K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono. Transparent MISFETs using homologous compounds, RMO3(ZnO)m (R=In, Lu; M= In, Ga; m=integer) single crystalline thin films, Thin Solid Films, Vol. 445, pp. 322-326, 2003.
• Katsuro Hayashi, Satoru Matsuishi, Tohsio Kamiya, Masahiro Hirano, Hideo Hosono. Photo-induced insulator-semiconductor transition in 12CaO.7Al2O3 (C12A7), Mater. Res. Soc. Symp. Proc., Vol. 747, pp. 247, 2003.
• Hiromichi Ohta, Kenji Nomura, Hidenori Hiramatsu, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Frontier of transparent oxide semiconductors, Solid-State Electronics, Vol. 47, pp. 2261, 2003.
• Satoru Matsuishi, Yoshitake Toda, Masashi Miyakawa, Katsuro Hayashi, Toshio Kamiya, Masahiro Hirano, Isao Tanaka, Hideo Hosono. High Density Electron Anion in a Nano-porous Single Crystal: [Ca₂₄Al₂₈O₆₄]⁴⁺(4e^-), Science, Vol. 301, pp. 626, 2003.
• Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Thin film transistor fabricated in single-crystalline transparent oxide semiconductor, Science, Vol. 300, pp. 1269, 2003.
• Satoru Narushima, Kazushige Ueda, Hiroshi Mizoguchi, Hiromichi Ohta, Masahiro Hirano, Ken-ichi Shimizu, Toshio Kamiya, Hideo Hosono. P-type amorphous oxide semiconductor, ZnRh₂O₄, and room temperature fabrication of amorphous oxide P-N hetero-junction diodes, Adv. Mater., Vol. 15, pp. 1409, 2003.
• H. Ohta, M. Kamiya, T. Kamiya, M. Hirano, H. Hosono. UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO / n-ZnO, Thin Solid Films, Vol. 445, pp. 317-321, 2003.
• Hiromichi Ohta, Satoru Narushima, Hiroshi Mizoguchi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh₂O₄ / n-ZnO, Appl.Phys.Lett., Vol. 82, No. 5, pp. 823-825, 2003.
• Hiromichi Ohta, Masahiro Hirano, Ken Nakahara, Hideaki Maruta, Tetsuhiro Tanabe, Masao Kamiya, Toshio Kamiya, HIDEO HOSONO. Fabrication and photo-response of pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO, Appl. Phys. Lett., Vol. 83, No. 5, pp. 1029-1031, 2003.
• Hidenori Hiramatsu, Kazushige Ueda, Kouhei Takafuji, Hiromichi Ohta, Masahiro Hirano, Toshio Kamiya, Hideo Hosono. Intrinsic excitonic photoluminescence and band gap engineering of wide gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln = Lanthanides, Ch = S or Se) semiconductor alloys, J. Appl. Phys., Vol. 94, pp. 5805-5808, 2003.
• Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Masahiro Hirano, Toshio Kamiya, Hideo Hosono. Degenerate p-type conductivity in wide-gap LaCuOS_1-xSe_x (x = 0 - 1) epitaxial films, Appl.Phys.Lett., Vol. 82, No. 7, pp. 1048-1050, 2003.
• 神谷利夫. 英国ケンブリッジ大学における協同研究, プラズマエレクトロニクス分科会会報, Vol. 36, pp. 14, 2002.
• 神谷利夫. 孤独な(?)材料屋の英国ケンブリッジ留学記, 現代化学, Vol. 376, pp. 47, 2002.
• 神谷利夫. 英国ケンブリッジ滞在記, 東工大クロニクル, Vol. 366, pp. 11, 2002.
• 神谷利夫. 英国ケンブリッジ滞在記, セラミックス, Vol. 37, pp. 120, 2002.
• Z.A.K. Durrani, T. Kamiya, Y.T. Tan, H. Ahmed. Single-electron charging in nanocrystalline silicon point-contacts, Microelectronic Engineering, Vol. 63, pp. 267, 2002.
• Y. Furuta, H. Mizuta, K. Nakazato, T. Kamiya, Y.T. Tan, Z.A.K. Durrani, K. Taniguchi. Characterisation of tunnel-barriers in polycrystalline Si point-contact single-electron transistors, Jpn. J. Appl. Phys., Vol. 41, pp. 2675, 2002.
• T. Kamiya, Y.T. Tan, Z.A.K. Durrani, H. Ahmed. Modification of the tunneling barrier in a nanocrystalline silicon single-electron transistor, J. Non-Cryst. Solids, Vol. 299-302, pp. 405, 2002.
• 鳴島暁, 溝口拓, 折田政寛, 太田裕道, 平野正浩, 神谷利夫, 清水健一, 細野秀雄. P型アモルファス酸化物の発見とアモルファス酸化物PN接合の形成, 第29回アモルファス物質の物性と応用セミナーテキスト, 2002.
• Ken-ichi Kawamura, Masahiro Hirano, Toshio Kamiya, Hideo Hosono. Holographic writing of volume-type micro-gratings in silica glass by a single chirped laser pulse, Appl. Phys. Lett., Vol. 81, pp. 1137, 2002.
• Toshio Kamiya, Zahid A.K. Durrani, Haroon Ahmed. Control of grain-boundary tunneling barriers in polycrystalline silicon, Appl. Phys. Lett., Vol. 81, pp. 2388, 2002.
• Katsuro Hayashi, Satoru Matsuishi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono.. Light-induced conversion of an insulating refractory oxide into a persistent electronic conductor, NATURE, Vol. 419, No. 6906, pp. 462-456, 2002.
• A. Suemasu, K. Nakahata, K. Ro, T. Kamiya, C.M. Fortmann, I. Shimizu. In-situ hydrogen plasma treatment for improved transport of (400) oriented polycrystalline silicon films, Solar Energy Materials and Solar Cells, Vol. 66, pp. 313, 2001.
• 神谷利夫, Y.T. Tan, Z.A.K. Durrani, H. Ahmed. ナノ結晶シリコン単電子トランジスタ, 第28回アモルファス物質の物性と応用セミナーテキスト, pp. 31, 2001.
• T. Kamiya, Y.T. Tan, Z.A.K. Durrani, H. Ahmed. Single-electron devices and nanostructures in silicon, Proc. 7th Internaational Symposium on Advanced Physical Fields, pp. 16, 2001.
• T. Kamiya, Y.T. Tan, Y. Furuta, H.Mizuta, Z.A.K. Durrani, H. Ahmed. Carrier transport in ultra-thin nano/polycrystalline silicon films and nanowires, Mater. Res. Soc. Symp. Proc., Vol. 664, pp. A16.2.1, 2001.
• Yoshikazu Furuta, Hiroshi Mizuta, Kazuo Nakazato, Yong Tsong Tan, Toshio Kamiya, Zahid A.K. Durrani, Haroon Ahmed, Kenji Taniguchi:. Carrier transport across a few grain boundaries in highly doped polycrystalline silicon, Jpn. J. Appl. Phys., Vol. 40, pp. L615, 2001.
• T. Watanabe, T. Sameshima, K. Nakahata, T. Kamiya, I. Shimizu. Free carrier optical absorption used to analyze the electrical properties of polycrystalline silicon films formed by plasma enhanced chemical vapor deposition, Thin Solid Films, Vol. 383, pp. 248, 2001.
• T. Kamiya, K. Nakahata, Y.T. Tan, Z.A.K. Durrani, I. Shimizu. Growth, structure and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single electron transistor, J. Appl. Phys., Vol. 89, pp. 6265, 2001.
• Y.T. Tan, T. Kamiya, Z.A.K. Durrani, H. Ahmed. Single-electron effects in side-gated point contacts fabricated in low-temperature deposited nanocrystalline silicon films, Appl. Phys. Lett., Vol. 78, pp. 1083, 2001.
• T. Kamiya, K. Nakahata, K. Ro, I. Shimizu. Structure and transport properties of p-type polycrystalline silicon fabricated from fluorinated source gas, Thin Solid Films, Vol. 394, pp. 230, 2001.
• Toshio Kamiya, Atsushi Suemasu, Tadashi Watanabe, Toshiyuki Sameshima, Isamu Shimizu. Improvement of transport properties for polycrystalline silicon prepared by plasma enhanced chemical vapor deposition, Appl. Phys. A, Vol. 73, pp. 151, 2001.
• H. Sato, K. Fukutani, W. Futako, T. Kamiya, C.M. Fortmann, I. Shimizu. High quality narrow gap (~1.52eV) a-Si:H with improved stability fabricated by excited inert gas treatment, Solar Energy Materials and Solar Cells, Vol. 66, pp. 321, 2001.
• K. Ohkawa, S. Shimizu, H. Sato, K. Komaru, W. Futako, T. Kamiya, C.M. Fortmann, I. Shimizu. Stability of a-Si:H solar cells deposited by Ar-treatment or by ECR techniques, Solar Energy Materials and Solar Cells, Vol. 66, pp. 297, 2001.
• T. Komaru, H. Sato, W. Futako, T. Kamiya, C.M. Fortmann, I. Shimizu. Improved p-i-n solar cells structure for narrow bandgap a-Si:H prepared by Ar^* chemical annealing at high temperatures, Solar Energy Materials and Solar Cells, Vol. 66, pp. 329, 2001.
• Satoshi Shimizu, Kojiro Okawa, Toshio Kamiya, C.M. Fortmann, Isamu Shimizu. Properties of amorphous silicon solar cells fabricated from SiH₂Cl₂, Solar Energy Materials and Solar Cells, Vol. 66, pp. 289, 2001.
• D. Matsuura, T. Kamiya, C. M. Fortmann, I. Shimizu. Microstructure control of very thin polycrystalline silicon layers on glass substrate by plasma enhanced CVD, Solar Energy Materials and Solar Cells, Vol. 66, pp. 305, 2001.
• K. Ro, K. Nakahata, T. Kamiya, C.M. Fortmann, I. Shimizu. Microstructure and photovoltaic properties of low temperature polycrystalline silicon solar cells fabricated by VHF-GD CVD using fluorinated gas, Journal of Non-Crystalline Solids, Vol. 266-269, pp. 1088, 2000.
• K. Nakahata, K.Ro, A.Suemasu, T. Kamiya, C.M.Fortmann, I. Shimizu. Fabrication of Polycrystalline Silicon Films from SiF₄/H₂/SiH₄ Mixture Gases Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition with In Situ Plasma Diagnostics and Their Structural Properties, Jpn. J. Appl. Phys., Vol. 39, pp. 3294, 2000.
• Toshio Kamiya, Kouichi Nakahata, Atsushi Suemasu, Kazuyoshi Ro, Charles M. Fortmann, Isamu Shimizu. Transport properties of polycrystalline silicon with various textures and microstructures, Mater. Res. Soc. Symp. Proc., Vol. 609, pp. A27.1, 2000.
• W. Futako, T. Sugawara, T. Kamiya, I. Shimizu. High electric field photocurrent of Vidicon and diode devices using wide band gap a-Si:H prepared with intentional control of silicon network by chemical annealing, J. Organometallic Chemistry, Vol. 611, pp. 525, 2000.
• T. Kamiya, K. Nakahata, C.M. Fortmann, I. Shimizu. Structural properties of polycrystalline silicon films having varied textures fabricated with intentional control of surface reactions using SiF₄/H₂/SiH₄ mixing gas, Journal of Non-Crystalline Solids, Vol. 266-269, pp. 120, 2000.
• K. Nakahata, T. Kamiya, C.M. Fortmann, I. Shimizu, H. Stuchlíková, A.Fejfar, J. Koèka. Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very high frequency plasma enhanced chemical vapor deposition using fluorinated source gas, Journal of Non-Crystalline Solids, Vol. 266-269, pp. 341, 2000.
• Toshio Kamiya, Takashi Komaru, Satoshi Shimizu, Mika Kanbe, Charles M. Fortmann, Isamu Shimizu. Transparent Conductive Oxide for Solar Cells Having Resistance to High Density Hydrogen Plasma and/or High Temperature, Key Engineering Materials, Vol. 181, pp. 125, 2000.
• Toshio Kamiya, Kouichi Nakahata, Toshiyuki Sameshima, Kazuyoshi Ro, Atsushi Suemasu, Charles M. Fortmann, Isamu Shimi. Growth and Transport Property of Polycrystalline Silicon Fabricated with Intentional Orientation Control on Glass, Key Engineering Materials, Vol. 181, pp. 125, 2000.
• Wataru Futako, Toshio Kamiya, Charles M. Fortmann, Isamu Shimizu. The structure of 1.5 to 2.0 eV Band Gap Amorphous Silicon Films Prepared by Chemical Annealing, Journal of Non-Crystalline Solids, Vol. 266-269, pp. 630, 2000.
• Satoshi Shimizu, Kojiro Okawa, Toshio Kamiya, C.M.Fortmann, Isamu Shimizu. Amorphous silicon solar cells techniques for reactive conditions, Mater. Res. Soc. Symp. Proc., Vol. 557, pp. 791, 1999.
• T. Kamiya, K. Nakahata, K. Ro, C. M. Fortmann, I. Shimizu. High rates and very low temperature fabrication of polycrystalline silicon from fluorinated source gas, Mater. Res. Soc. Symp. Proc., Vol. 557, pp. 513, 1999.
• M. Kanbe, T. Komaru, K. Fukutani, T. Kamiya, C.M. Fortmann, I. Shimizu. Amorphous Silicon Solar Cell Techniques for High Temperature and/or Reactive Deposition Conditions, Mater. Res. Soc. Symp. Proc., Vol. 557, pp. 767, 1999.
• Satoshi Shimizu, Takashi Komaru, Kojiro Okawa, Toshio Kamiya, C.M.Fortmann, Isamu Shimizu. Fabrication of Solar Cells Having SiH₂Cl₂ Based I-layer Materials, Jpn. J. Appl. Phys., Vol. 38, No. 12, pp. 6617, 1999.
• Toshio KAMIYA, Kouichi NAKAHATA, Kazuyoshi RO, Charles Michael FORTMANN, Isamu SHIMIZU. Comparison of Microstructure and Crystal Structure of Polycrystalline Silicon Exhibiting Varied Textures Fabricated by Microwave and Very High Frequency Plasma Enhanced Chemical Vapor Deposition and their transport properties, Jpn. J. Appl. Phys., Vol. 38, No. 10, pp. 5750, 1999.
• Toshio KAMIYA, Kazuyoshi RO, Charles Michael FORTMANN, Isamu SHIMIZU. Role of Seed Crystal Layer in Two-Step-Growth Procedure for Low Temperature Growth of Polycrystalline Silicon Thin Film from SiF4 by a Remote-Type Microwave Plasma Enhanced Chemical Vapor Deposition, Jpn. J. Appl. Phys, Vol. 38, No. 10, pp. 5762, 1999.
• Takashi KOMARU, Satoshi SHIMIZU, Mika KANBE, Yoshiteru MAEDA, Toshio KAMIYA, Charles Michael FORTMANN, I. SHIMIZU. Optimization of Transparent Conductive Oxide for Improved Resistance to Reactive and/or High Temperature Optoelectronic Device Processing, Jpn. J. Appl. Phys., Vol. 38, No. 10, pp. 5796, 1999.
• T. Kamiya, K. Nakahata, A. Miida, C. M. Fortmann, I.Shimizu. Control of orientation from randome to(220) or (400) orientation in polycrystalline silicon films, Thin Solid Films, Vol. 337, pp. 18, 1999.
• K. Nakahata, A. Miida, T. Kamiya, C. M. Fortmann, I. Shimizu. Carrier transport, structure and orientation in polycrystalline silicon on glass, Thin Solid Films, Vol. 337, pp. 45, 1999.
• 神谷利夫, 前田佳輝, 中畑浩一, 小丸貴史, C.M.Fortmann, 清水勇. ガラス基板上に低温成長させた多結晶シリコン薄膜の構造に与えるハロゲンの影響, 日本セラミックス協会学術論文誌, Vol. 107, pp. 1099, 1999.
• Toshio KAMIYA, Kouichi NAKAHATA, Kazuyoshi RO, Jurat TOHTI, Charles Michael FORTMANN, Isamu SHIMIZU. Structure Control of Polycrystalline Silicon Films on Glass Substrates and their properties, Key Engineering Materials, Vol. 169-170, pp. 171, 1999.
• Kazuhiko FUKUTANI, Tatsuya SUGAWARA, Wataru FUTAKO, Toshio KAMIYA, Charles Michael FORTMANN, Isamu SHIMIZU. Extremely Narrow Band Gap, ~1.50eV, Amorphous Silicon, Mater. Res. Soc. Symp. Proc., Vol. 507, pp. 211, 1998.
• W. Futako, T. Kamiya, C.M. Fortmann, I. Shimizu. Photoconductivity gain over 10 at a large electric field in wide gap a-Si:H, J. Non-Crystalline Solids, Vol. 227-230, pp. 220, 1998.
• Wataru FUTAKO, Tatsuya SUGAWARA, Toshio KAMIYA, Charles Michael FORTMANN, Isamu SHIMIZU. Wide Band Gap a-Si:H-Based High Gain Visicon Devices Prepared by Chemical Annealing, Mater. Res. Soc. Symp. Proc., Vol. 507, pp. 357, 1998.
• Kouichi NAKAHATA, Atsushi MIIDA, Toshio KAMIYA, Yoshiteru MAEDA, Charles Michael FORTMANN, Isamu SHIMIZU. Control of Orientation for Polycrystalline Silicon Thin Films Fabricated from Fluorinated Source Gas, Jpn. J. Appl. Phys. Lett.,, Vol. 37, No. 9AB, pp. 1026, 1998.
• K. Fukutani, M. Kanbe, W. Futako, T. Kamiya, C.M. Fortmann, I. Shimizu. Bandgap tuning of a-Si:H from 1.55 eV to 2.10 eV by promoting intentionally structural relaxation, J. Non-crystalline Solids, Vol. 227-230, pp. 632, 1998.
• Y.Yamamoto, W. Futako, K.Fukutani, M.Hagino, T. Sugawara, T.Kamiya, C.M.Fortmann, I. Shimizu. Stable Solar Cells Prepared from Dichlorosilane, Mater. Res. Soc. Symp. Proc., Vol. 507, pp. 199, 1998.
• M. Kambe, Y.Yamamoto, K.Fukutani, T.Kamiya, C.M.Fortmann, I. Shimizu. Narrow Bandgap Amorphous Silicon-Based Solar Cells Prepared by High-Temperature Processing, Mater. Res. Soc. Symp. Proc., Vol. 507, pp. 205, 1998.
• Toshio KAMIYA, Takaaki TSURUMI, Ryuichi MISHIMA, Etsuo SAKAI, Masaki DAIMON. Frequency, electric field and temperature dependence of piezoelectric constant of Pb(Zr,Ti)O3 based ceramics under high electric field, Ferroelectrics, Vol. 196, pp. 277, 1997.
• W.Futako, K. Fukutani, M. Kannbe, T. Kamiya, C.M.Fortmann, I. Shimizu. Progress in Growth of High Quality Amorphous Silicon Materials, Proc. IEEE 26th PVSC, pp. 581, 1997.
• 坂井悦郎, 星野清一, 大場陽子, 神谷利夫, 大門正機. 無機粉体の特性とセメントペーストの流動性, 第23回セメント・コンクリート研究討論会論文報告集, pp. 104, 1996.
• T. KAMIYA. Determination of Interatomic Potential by Ab-Initio Periodic Calculation for MgO, Jpn. J. Appl. Phys., Vol. 35, pp. 3688, 1996.
• Yutaka Kumano, Takaaki Tsurumi, Toshio Kamiya. Detection of 90degrees Domain Rotation in PZT Ceramics by X-ray Diffraction Method, Trans. Mater. Res Soc. Jpn., Vol. 20, pp. 656, 1996.
• 坂井悦郎, 田中丈士, 神谷利夫, 大門正機. 分子系分散剤によるエーライトの分散, セメント・コンクリート論文集, pp. 886, 1996.
• T.KAMIYA. Calculation of Crystal Structure, Dielectric and Piezoelectric Properties of Wurtzite-Type Crystals Using Ab-initio Periodic Hartree-Fock Method, Jpn. J. Appl. Phys., Vol. 35, pp. 4421, 1996.
• 坂井悦郎, 大門正機, 大場陽子, 神谷利夫. 石灰石微粉末の反応性と流動性, 第２２回セメント・コンクリート研究討論会論文報告集, pp. 73, 1995.
• Takaaki Tsurumi, Kouji Soejima, Toshio Kamiya, Masaki Daimon. Mechanism of Diffuse Phase Transition in Relaxor Ferroelectrics, Jpn. J. Appl. Phys., Vol. 33, pp. 1959, 1994.
• T. KAMIYA, T. TANAKA, T. TSURUMI, M. DAIMON. Calculation of Band Structures for Perovskite-Type Crystals Using Discrete variational Xa Method;, Jpn. J. Appl. Phys., Vol. 33, No. 7A, pp. 3965, 1994.
• Takaaki Tsurumi, Kouji Soejima, Toshio Kamiya, Masaki Daimon. Dielectric Dispersion of Relaxor Ferroelectrics, Trans. Mater. Res. Soc. Jpn., Vol. 14, pp. 1691, 1994.
• Jong Hee Kim, Takaaki Tsurumi, Toshio Kamiya, Masaki Daimon. Growth of Bismuth Silicate Thin Film on Si and Its Dielectric Properties, J. Appl. Phys. , Vol. 75, pp. 2924, 1994.
• Takaaki Tsurumi, Masaki Daimon, Toshio Kamiya, Yoshinobu Hirano. Crystal Structure and Hydration of Belite, Ceramic Transaction, Vol. 40, pp. 19, 1994.
• 大門正機, 坂井悦郎, 大場陽子, 神谷利夫, 金尚杢. 高炉スラグ微粉末を混合したセメント硬化体の炭酸化反応, 第２１回セメント・コンクリート研究討論会論文報告集 , pp. 29, 1994.
• Takaaki Tsurumi, Kouji Soejima, Toshio Kamiya, Masaki Daimon. Dielectric Dispersion of Relaxor Ferroelectrics, Trans. Mater. Res. Soc. Jpn., Vol. 14B, pp. 1694, 1994.
• Takaaki Tsurumi, Kouji Soejima, Toshio Kamiya, Masaki Daimon. Diffuse Phase Transition of Pb(Mg1/3Nb2/3)O3, Ext. Abs. The 6th US-Jpn Seminar Dielectr. Piezo. Ceram. , pp. 215, 1993.
• Jong Hee Kim, Takaaki Tsurumi, Hideyuki Hirano, Toshio Kamiya, Nobuyasu Mizutani, Masaki Daimon. Preparation of Bismuth Silicate Films on Si Wafer by Metalorganic Chemical Vapor Deposition, Jpn. J. Appl. Phys. , Vol. 32, pp. 135, 1993.
• Toshio KAMIYA, Ryuuichi MISHIMA, Takaaki TSURUMI, Masaki DAIMON. Mechanism of Temperature Dependence of Piezoelectric Properties for Pb(Zr, Ti)O3, Jpn. J. Appl. Phys. , Vol. 32, No. 9B, pp. 4223, 1993.
• TOSHIO KAMIYA. Quantum Calculation of molecular orbital for PZT solid Solutions, Computer Aided Innovation of New Materials II, pp. 225, 1993.
• TOSHIO KAMIYA. Effects of Manganese addition on piezoelectric properties of Pb(Zr_0.5Ti_0.5)O₃, Jpn. J. Appl. Phys., Vol. 31, pp. 3058, 1992.

著書

• 片瀬貴義, 神谷利夫. 第II編、第8章 熱伝導制御材料, 熱制御に向けた相変化材料PCMの開発と応用, シーエムシー出版, Apr. 2024.
• 片瀬貴義, ホシンイ, 神谷利夫. 毒性元素を含まない熱電材料で過去最高の変換効率－逆ペロブスカイト酸化物で実現－, セラミックス, Vol. 59, No. 3, pp. 220, Mar. 2024.
• 片瀬貴義, 神谷利夫. セレン化スズ半導体の極性を多段階制御 排熱を電気に変える高性能熱電素子実現へ, クリーンエネルギー, 日本工業出版, Vol. 30, No. 4, pp. 19-22, Apr. 2021.
• Toshio Kamiya, Hidenori Hiramatsu, Keisuke Ide, Takayoshi Katase, Hideo Hosono. Exotic Crystal Structures and Electronic Structures in Novel Structured Inorganic Materials, Chapter 6, Novel Structured Metallic and Inorganic Materials, ed. by Yuichi Setsuhara, Toshio Kamiya, and Shin-ichi Yamaura, Springer Nature Singapore Pte Ltd, p. 107-120, July 2019.
• 井手啓介, 片瀬貴義, 野村研二, 雲見日出也, 細野秀雄, 神谷利夫. アモルファス酸化物半導体：In－Ga－Zn－O, 21世紀版薄膜作製応用ハンドブック 4編 2章 光部品 7節 透明導電膜, June 2019.
• Toshio Kamiya, Hideo Hosono. Oxide TFTs, Handbook of Visual Display Technology, pp. 1111-1144, 2016.
• 神谷利夫. １４章 高機能性無機材料 編集, 化学便覧 応用化学編 第7版, Jan. 2014.
• David Ginley, Claes Granqvist, Toshio Kamiya, Yuzo Shigesato, Hideo Hosono. Preface; Thin Soild Films, Vol. 559, pp. 1, 2014.
• 神谷利夫, 細野秀雄. 第25節 光学法、X線法によるアモルファスIGZO薄膜の構造・物性解析; 光学薄膜の最適設計・成膜技術と膜厚・膜質・光学特性の制御, 2013/6/28 株式会社 技術情報協会発行, pp. 367-376, 2013.
• Toshi Kamiya, Hideo Hosono. Chap. 13 Amorphous In-Ga-Zn-O thin film transistors: fabrication and properties, Handbook of Zinc Oxide and Related Materials (CRC),, pp. 485-535, 2012.
• 野村研二, 神谷利夫, 細野秀雄. 第6章：N型a-In-Ga-Zn-O/P型c-Siヘテロ接合型太陽電池の開発, ; 高効率太陽電池（株式会社エヌ・ティー・エス, ISBN：978-4-86469-034-8）, pp. 306-318, 2012.
• 細野秀雄, 神谷利夫. 計算機セラミックス設計（安定構造、電子構造、物性）; セラミックス機能化ハンドブック, 株式会社エヌ・ティー・エス, pp. 12-27, Jan. 2011.
• 神谷利夫, 柳博, 戸田喜丈, 細野秀雄. 透明導電体のバンドアライメントとヘテロ接合; バンドギャップエンジニアリング －次世代高効率デバイスへの挑戦－, 監修 大橋直樹、シーエムシー出版, 2011.
• 神谷利夫. 第2章 1 概要 －透明酸化物の材料設計－, 酸化物半導体と鉄系超伝導：新物質・新機能・応用展開 (細野秀雄、平野正浩(監修）, シーエムシー出版), pp. 12-31, 2010.
• H. Hosono, T. Atou, T. Kamiya, Y. Matsumoto. Special Issue of STAC-3, Materials Science and Engineering B, 173, 2010.
• 神谷利夫. 薄膜トランジスタ, 薄膜トランジスタ, コロナ社, Oct. 2008.
• Hideo Hosono, David Ginley, Yuzo Shigesato, Toshio Kamiya. Transparent Conductive Oxide Thin Films 2007, Thin Solid Films, Vol. 516, pp. 5749-5927, 2008.
• 神谷利夫, 野村研二, 細野秀雄. 酸化物薄膜トランジスタ: 透明結晶TFTからフレキシブルアモルファスTFTまで, シーエムシー出版, Feb. 2007.
• 細野秀雄, 神谷利夫. 透明導電膜の技術 改訂第2版 第4章 透明導電膜の新しい展開, オーム社, Dec. 2006.
• 神谷利夫. p型アモルファス酸化物半導体と室温で形成したpn接合ダイオード 「透明酸化物機能材料とその応用」, pp. 114-123, Nov. 2006.
• 神谷利夫. 透明酸化物の電子構造概論, シーエムシー出版, pp. 11-32, Nov. 2006.
• 細野秀雄, 神谷利夫. 透明金属が拓く驚異の世界　不可能に挑むナノテクノロジーの錬金術, ソフトバンク クリエイティブ株式会社, Nov. 2006.
• 細野秀雄, 神谷利夫. 2.2 電子状態の理解はセラミックスの研究にどう役立つか ～酸化物半導体のバンドラインアップを例として～, 社団法人 日本セラミックス協会, pp. 11-17, Aug. 2006.
• 野村研二, 太田裕道, 神谷利夫, 細野秀雄. 自然超格子構造をもつ透明酸化物半導体の単結晶薄膜成長と透明トランジスタへの応用 「材料開発のための顕微鏡法と応用写真集」, 日本金属学会, pp. 222, 2006.
• Toshio Kamiya, Naoki Ohashi, Junzo Tanaka. Chap. 4 Ceramics, in Hartree-Fock-Slater Method for Materials Science -The DV-X Alpha Method for Design and Characterization of Materials- (Eds. Hirohiko Adachi, Takeshi Mukoyama, Jun Kawai), Springer, pp. 85, Dec. 2005.
• 神谷利夫, 天川修平, 水田博. 単一電子デバイス 実験化学講座 第5版 28巻 ナノテクノロジーの化学, 日本化学会編、丸善株式会社, Vol. 28, pp. 212-250, 2005.
• 神谷利夫, 太田裕道, 平松秀典, 上岡隼人, 野村研二. 透明酸化物半導体とデバイスへの展開, オプトロニクス「機能性透明酸化物とオプトエレクトロニクス －ERATO細野透明電子活性プロジェクト成果」 , オプトロニクス「機能性透明酸化物とオプトエレクトロニクス －ERATO細野透明電子活性プロジェクト成果」 , Vol. 274, pp. 128, 2004.
• 林克郎, 松石聡, 宮川仁, Peter V. Sushko, 神谷利夫. 透明ナノポ－ラス結晶：12CaO・7Al₂O₃, オプトロニクス 「機能性透明酸化物とオプトエレクトロニクス －ERATO細野透明電子活性プロジェクト成果」, オプトロニクス 「機能性透明酸化物とオプトエレクトロニクス －ERATO細野透明電子活性プロジェクト成果」, Vol. 274, pp. 140, 2004.
• 細野秀雄, 神谷利夫. ナノ構造を利用した透明酸化物の高機能化 －ユビキタス元素を使って新機能に迫る－, セラミックスと建築材料 (応用セラミックス研究所 創立70周年記, セラミックスと建築材料 (応用セラミックス研究所 創立70周年記, pp. 45, 2004.
• 神谷利夫, 野村研二, 細野秀雄. 透明酸化物半導体： 材料設計からデバイス応用まで, セラミックデータブック, セラミックデータブック, Vol. 32, pp. 158, 2004.
• 細野秀雄, 神谷利夫. 透明酸化物のナノ構造を活用した機能開拓, 化学工業, 化学工業, pp. 683, 2004.
• 神谷利夫. 台湾工業技術研究院に招かれて, 東工大クロニクル, 東工大クロニクル, Vol. 373, pp. 9, 2003.
• 細野秀雄, 神谷利夫. 電子状態の理解はセラミックスの研究にどう役立つか ～酸化物半導体のバンドラインナップを例として～, セラミックス, セラミックス, Vol. 38, pp. 825, 2003.
• Toshio Kamiya, Wataru Futako, Isamu Shimizu. Control of bandgap and network structure in hydrogenated amorphous silicon, Recent Developments in Non-Crystalline Solids (Transworld Research Network, Kerala, India), Recent Developments in Non-Crystalline Solids (Transworld Research Network, Kerala, India), Vol. 2, pp. 311, 2002.
• T. Kamiya, Y.T. Tan, Z.A.K. Durrani, H. Ahmed. Room temperature single-electron effects in nanostructured silicon, FEMD News Letter, FEMD News Letter, Vol. 3, pp. 6, 2001.
• Y. Furuta, H. Mizuta, K. Nakazato, Y.T. Tan, T. Kamiya, Z.A.K. Durrani, H. Ahmed. Carrier transport across a few grain boudnaries in polycrystallien silicon, FEMD News Letter, FEMD News Letter, Vol. 2, pp. 5, 2001.
• 清水勇, 神谷利夫. 分光エリプソメトリによる多(微)結晶Si成長のその場観察, 学術振興会薄膜第131委員会第189回研究会資料, 学術振興会薄膜第131委員会第189回研究会資料, pp. 16, 1997.
• 神谷利夫, 鶴見敬章. 強誘電性ペロブスカイト酸化物の材料設計と計算機シミュレーション, セラミックスデータブック1993, セラミックスデータブック1993, pp. 44, 1993.
• 鶴見敬章, 神谷利夫. ペロブスカイト強誘電体物性のシミュレーション, セラミックス, セラミックス, Vol. 27, No. 8, pp. 707, 1992.

国際会議発表 (査読有り)

• Takayoshi Katase, Xinyi He, Shigeru Kimura, Terumasa Tadano, Satru Matsuishi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Design of high-performance mixed anion thermoelectric oxides, MRS-J, Dec. 2024.
• Loku Singgappulige Rosantha Kumara, Sakura Yoshikawa, Atsushi Shimizu, Linwei Li, Takayoshi Katase, Seo Okkyun, Takeshi Watanabe, Masugu Sato, Osami Sakata, Atsushi Fukuchi, Toshio Kamiya. Atomic Scale and Electronic Structure Characterization of Amorphous Tantalum Oxide Thin Films via Synchrotron X-ray Techniques, AsCA2024, Dec. 2024.
• Y. Tsuruma, K. Yamaguchi, D. Sasaki, E. Kawashima, T. Kadono, K. Ide, T. Katase, M. Kimura, T. Kamiya. Why Poly-OS IGO Exhibits Mobilities > 50cm2/Vs, PRiME 2024, Oct. 2024.
• Zan Yang, Xinyi He, Takayoshi Katase, Toshio Kamiya. Acceleration of Thermoelectric Materials Discovery by Extracting Phonon and Carrier Transport Information from Dielectric Response, The Fourteenth International Conference on the Science and Technology for Advanced Ceramics (STAC14), Oct. 2024.
• Ryusei Higuchi, Xinyi He, Takayoshi Katase, Toshio Kamiya. Eco-friendly thermoelectric semiconductor layered AE2ZnN2 (AE=Ca, Sr, Ba) with low thermal conductivity, The Fourteenth International Conference on the Science and Technology for Advanced Ceramics (STAC14), Oct. 2024.
• Sanjin Choi, Takayoshi Katase, Toshio Kamiya. Hydrogen substitution effect on thermoelectric properties of BaTiO3-xHx films with low thermal conductivity, The Fourteenth International Conference on the Science and Technology for Advanced Ceramics (STAC14), Oct. 2024.
• Tomoya Suzuki, Kaname Sakaban, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Impact of Oxygen Pressure and Substrate Temperature on Epitaxial Film Growth of Rutile-type GeO2, The Fourteenth International Conference on the Science and Technology for Advanced Ceramics (STAC14), Oct. 2024.
• Zhongxu Hu, Xinyi He, Takayoshi Katase, Hiroyuki Noto, Hiyori Uehara, Toshio Kamiya. Fabrication and thermoelectric properties of La-doped Ba(Zr,Hf)S3 bulk polycrystals with ultra-low thermal conductivity, The Fourteenth International Conference on the Science and Technology for Advanced Ceramics (STAC14), Oct. 2024.
• Xinyi He, Takayoshi Katase, Satoru Matsuishi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Inverse-Perovskite Oxides with High Thermoelectric Performance and Air Stability, The Fourteenth International Conference on the Science and Technology for Advanced Ceramics (STAC14), Oct. 2024.
• Tomoya Suzuki, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya. What determines electron effective mass and structural stability in crystalline semiconductors with InGaZnO4 isostructures, IMID 2024, Aug. 2024.
• Takayoshi Katase, Xinyi He, Toshio Kamiya. Eco-friendly high-performance thermoelectric mixed-anion oxides, Euro-MRS, May 2024.
• Atsushi Fukuchi, Takayoshi Katase, Toshio Kamiya. Stable observation of the current-induced insulator–metal transition in nonequilibrium steady states using Ca2RuO4 epitaxial thin films, 15th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-15), May 2024.
• Atsushi Fukuchi, Takayoshi Katase, Toshio Kamiya. Stable observation of the current-induced insulator–metal transition in nonequilibrium steady states using Ca2RuO4 epitaxial thin films, 15th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-15), May 2024.
• Xinyi He, Shigeru Kimura, Takayoshi Katase, Terumasa Tadano, Satoru Matsuishi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Low Thermal Conductivity and High Thermoelectric Performance in Toxic-Element-Free Inverse-Perovskite Oxide, 2024 Materials Research Society Spring Meeting & Exhibit, Apr. 2024.
• Zhongxu Hu, Mari Hiramatsu, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Reversible thermal conductivity modulation above room temperature by 2D-3D structural phase transition in non-equilibrium (Sn1-xPbx)S solid solution, STAC - D2MatE 2024, Feb. 2024.
• Sakura Yoshikawa, Xinyi He, Takayoshi Katase, Shigenori Ueda, Shunsuke Kobayashi, Kei Nakayama, Takeharu Kato, Hiroki Moriwake, Toshio Kamiya. Origin of electronic conduction in H-doped ultra-wide bandgap SrO thin film, STAC - D2MatE 2024, Feb. 2024.
• Zan Yang, Linwei Li, Xinyi He, Takayoshi Katase, Toshio Kamiya. Ultra-low Lattice Thermal Conductivity of SnSb2Se4 with Pseudo-1D Atomic Chains, STAC - D2MatE 2024, Feb. 2024.
• Takayoshi Katase, Xinyi He, Shigeru Kimura, Terumasa Tadano, Satoru Matsuishi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Inverse-perovskite Ba3BO (B = Si and Ge): a potential high performance eco-friendly thermoelectric material with low lattice thermal conductivity, STAC - D2MatE 2024, Feb. 2024.
• Xinyi He, Shigeru Kimura, Takayoshi Katase, Terumasa Tadano, Satoru Matsuishi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Origin of high thermoelectric performance and low lattice thermal conductivity in inverse-perovskite Oxide, Ba3BO (B = Si and Ge), STAC - D2MatE 2024, Feb. 2024.
• Atsushi Shimizu, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Optimization of deposition parameters for porous a-IGZO thin films using machine learning regression, STAC - D2MatE 2024, Feb. 2024.
• Xinyi He, Seiya Nomoto, Takayoshi Katase, Terumasa Tadano, Toshio Kamiya. Enhancing Thermoelectric Performance of SrTiO3 with strong phonon scattering by hydride anion substitution, MRM2023/IUMRS-ICA2023, Dec. 2023.
• Atsushi Tsurumaki-Fukuchi, Keiji Tsubaki, Takayoshi Katase, Toshio Kamiya. Nonthermal Mott Resistive Switching in Ca2RuO4 thin films with independence from the temperature-driven transition characteristics, MRM2023/IUMRS-ICA2023, Dec. 2023.
• Keisuke Ide, Takayoshi Katase, Toshio Kamiya. Amorphous-oxide-semiconductor-based phosphors for inorganic light-emitting diodes, The 3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture, Oct. 2023.
• Takayoshi Katase, Xinyi He, Yusaku Nishimura, Keisuke Ide, Hidenori Hiramatsu, Toshio Kamiya. Thermal conductivity modulation using morphotropic phase boundary of 2D-3D chalcogenide semiconductors, The 3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture, Oct. 2023.
• Keisuke Ide, Tasuke Kadono, Atsushi Shimizu, Koji Yamaguchi, Emi Kawashima, Yuki Tsuruma, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Mobility analysis for polycrystalline and amorphous oxide semiconductors using Seto model combined with in-grain scattering factors, The 23rd International Meeting on Information Display, Aug. 2023.
• Atsushi Shimizu, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Search of optimal deposition conditions and regression model of a-In-Ga-Zn-O by machine learning, The 23rd International Meeting on Information Display, Aug. 2023.
• Keiji Tsubaki, Atsushi Tsurumaki-Fukuchi, Takayoshi katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi. Epitaxial strain engineering of nonlinear transport phenomena in an electrically tunable Mott insulator Ca2RuO4, The 9th International Symposium on Organic and Inorganic Electronic materials and Related nanotechnologies, June 2023.
• Masashi Kurosawa, Takayoshi Katase, Yukihiro Imai, Masaya Nakata, Masatoshi Kimura, Toshio Kamiya, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka. Low-temperature Thermoelectric Properties of GeSn Alloys Films, ICSI-ISTDM2023, May 2023.
• Masashi Kurosawa, Takayoshi Katase, Yukihiro Imai, Masaya Nakata, Masatoshi Kimura, TOSHIO KAMIYA, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka. Low-temperature Thermoelectric Properties of GeSn Alloys Films, ICSI-ISTDM2023, May 2023.
• Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya. Transport properties of Zn3N2 investigated by ionic liquid gated electric-double-layer transistors, Materials Research Meeting 2021, Dec. 2021.
• Masatoshi Kimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Jan M. Tomczak, Makoto Minohara, Ryotaro Aso, Hideto Yoshida, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya. Appearance and large enhancement of phonon drag thermopower by epitaxial strain and phonon leaking from LaAlO3 in LaNiO3, Materials Research Meeting 2021, Dec. 2021.
• Shigeru Kimura, Akihiro Shiraishi, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. High-purity bulk synthesis and electronic properties of a two-dimensional layered semiconductor, alkaline earth transition metal nitrides, Materials Research Meeting 2021, Dec. 2021.
• Tasuke Kadono, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Fabrication and characterization of resistive random-access memory device using amorphous 12CaO·7Al2O3, Materials Research Meeting 2021, Dec. 2021.
• Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Enhanced thermoelectric figure-of-merit ZT in layered SnSe doped with isovalent Te and its origin clarified by density functional theory, Materials Research Meeting 2021, Dec. 2021.
• Shigeru Kimura, Akihiro Shiraishi, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Two-dimensional layered semiconductors AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf); high-purity bulk synthesis and electronic property characterization, 2021 Materials Research Society Fall Meeting & Exhibit, Nov. 2021.
• Masatoshi Kimura, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Large phonon drag thermopower enhancement by epitaxial strain and phonon leaking in LaAlO3 / LaNiO3 / LaAlO3 heterostructure, 2021 Materials Research Society Fall Meeting & Exhibit, Nov. 2021.
• Xinyi He, Chihiro Yamamoto, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Double charge polarity conversion by Sb doping in layered SnSe with switchable substitution sites, 2021 Materials Research Society Fall Meeting & Exhibit, Nov. 2021.
• Keiji Tsubaki, Atsushi Turumaki-Fukuchi, Yasuo Takahashi, Takayoshi Katase, Toshio Kamiya, Masashi Arita. Fast and Reliable Resistance Switching in Ca2RuO4 Thin Films Driven by the Current-Induced Phase Transitions, 2021 International Conference on Solid State Devices and Materials (SSDM), Sept. 2021.
• Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya. Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density, 2021 International Conference on Solid State Devices and Materials (SSDM 2021), Sept. 2021.
• Keiji Tsubaki, Tenki Ishida, Yasuo Takahashi, Takayoshi Katase, Toshio Kamiya, Atsushi Tsurumaki-Fukuchi, Masashi Arita. Current-driven metal-insulator transition observed in epitaxial thin films of the Mott Semiconductor Ca2RuO4, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Takumi Nose, Xinyi He, Haoyun Zhang, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Degenerate hole conduction and ultra-low lattice thermal conductivity of SnSe by nonequilibrium isovalent Te substitution, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Masatoshi Kimura, Yuhi Higuchi, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Strain-induced large power-factor enhancement by breaking thermoelectric trade-off relation in lanthanum nickel oxide, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Xinyi He, Tatsuya Cho, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Electronic structures and electro-optical properties of layered oxychalcogenide semiconductor, AE2CuInO3Ch (AE: Alkaline earth, Ch: Chalcogen), The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Keisuke Ide, Yukari Kasai, Akihiro Kato, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Effect of hydrogen doping on transport property of ultrawide bandgap amorphous oxide semiconductor, amorphous Ga-O, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Qun Zhang, Toshio Kamiya. Fabrication of Zn3N2 electric double layer transistor by ionic liquid gating, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Keisuke Ide, Yukari Kasai, Akihiro Kato, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Effect of hydrogen doping on transport property of ultrawide bandgap amorphous oxide semiconductor, amorphous Ga-O, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Takayoshi Katase, Xinyi He, Terumasa Tadano, Keisuke Ide, Hideto Yoshida, Shiro Kawachi, Junichi Yamaura, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. 3D-2D structural phase transition and giant electronic conductivity modulation in non-equilibrium hetero-structural alloy, (Pb1-xSnx)Se, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Shigeru Kimura, Akihiro Shiraishi, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Electronic structures and electronic properties of 2-dimensional layered semiconductors, AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf), The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Mari Hiramatsu, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. High electron conductivity and extremely low thermal conductivity of layered SnS semiconductor by geometrical Pb doping, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Ryusei Higuchi, Takayoshi Katase, Kota Hanzawa, Shintaro Yasui, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Thermoelectric properties of non-equilibrium SnSe thin films stabilized by epitaxial strain, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Origin of high-density hole doping by isovalent Te substitution in SnSe, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Masatoshi Kimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Phonon-drag driven giant anisotropic thermopower in epitaxially strained LaNiO3 (110) ultra-thin films, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Keiji Tsubaki, Tenki Ishida, Yasuo Takahashi, Takayoshi Katase, Toshio Kamiya, Atsushi Tsurumaki-Fukuchi, Masashi Arita. Solid-phase epitaxial growth of Ca2RuO4 thin films with current-induced metal-insulator transition, The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), Mar. 2021.
• Keiji Tsubaki, Tenki Ishida, Yasuo Takahashi, Takayoshi Katase, Toshio Kamiya, Atsushi Tsurumaki-Fukuchi, Masashi Arita. Current-induced insulator-to-metal transition of Ca2RuO4 thin films observed in local electrical measurements, 33rd International Microprocesses and Nanotechnology Conference (MNC 2020), Nov. 2020.
• Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo. Expansion of Ba and Ca solubility limit into SrSi2 thin film and their thermoelectric properties, 2019 MRS Fall Meeting & Exhibit, Dec. 2019.
• Atsushi Tsurumaki-Fukuchi, Keiji Tusubaki, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi. Observation of Field-Induced Resistive Phase Transition in Ca2RuO4 Thin Films, 26th International Workshop on Oxide Electronics (iWOE 26), Oct. 2019.
• Yutaro Kobayashi, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Opto-Electrical Properties and Structural Transition in BaSnO3-BaCeO3 Oxide Semiconductor Solid-Solution System, 4th International Conference on Advanced Electromaterials (ICAE 2017), Nov. 2017.
• K. Ide, M. Ota, T. Katase, K. Takenaka, Y. Setsuhara, A. Hiraiwa, H. Kawarada, H. Hiramatsu, H. Hosono, T. Kamiya. Effects of film microstructures on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors, International Conference on Materials and Systems for Sustainability (ICMaSS) 2017, Sept. 2017.
• Junghwan Kim, Toshio Kamiya, Hideo Hosono. Material Design and Development of New Amorphous Oxide Semiconductors for Future Electronics, ICMass/iLIM 2017, Sept. 2017.
• Junghwan Kim, Hideo Hosono, Toshio Kamiya. Development of Amorphous Gallium Oxide Semiconductor and its Application to future Electronic Devices, International Workshop on Ga2O3 and Related Materials (IWGO), Sept. 2017.
• Yutaro Kobayashi, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Sequential structural transition and optoelectronic properties of BaSnO3-BaCeO3 oxide semiconductor solid solution system, The Tenth International Conference on the Science and Technology for Advanced Ceramics (STAC-10), Aug. 2017.
• Junghwan Kim, Toshio Kamiya, Hideo Hosono. Correlation between Electronic Structures and Instabilities in Amorphous Oxide Semiconductors: Strategies for High-Performance and Stable AOS-TFTs, International Meeting on Information Display (IMID), IMID 2017 DIGEST, p. 266, Aug. 2017.
• Junghwan Kim, Nobuhiro Nakamura, Toshio Kamiya, Hideo Hosono. Material Design of Ultra-Wide Bandgap AOSs and their Applications in Photostable Electronic Devices, Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2017, 2017 24th International Workshop on. IEEE, pp. 299-301, Aug. 2017.
• Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Electronic structure of amorphous oxide semiconductor-based light emitting thin film, A-GaOx:Eu, The Tenth International Conference on the Science and Technology for Advanced Ceramics (STAC-10), Aug. 2017.
• Masato Ohta, Keisuke Ide, Takayoshi Katase, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Growth Dynamics, Annealing Effects, and Microstructure Evolution in Amorphous In-Ga-Zn-O Observed by HAADF STEM, 10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics, July 2017.
• Y. Futakado, N. Watanabe, K. Ide, J. Kim, T. Katase, H. Hiramats, H. Hosono, T. Kamiya. Exploration of New Oxide Light-Emitting Semiconductor Thin Films Using Transition Metals, 10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics, July 2017.
• 渡邉 脩人, 井手 啓介, 金 正煥, 平松 秀典, 片瀬 貴義, 細野 秀雄, 神谷 利夫. Room Temperature Fabricated Multi-Color Liight-Emitting Thin Films Based on Ultra-Wide Bandgap Amorphous Oxide Semiconductor, 10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics, July 2017.
• Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Strain-Induced Modulation of Thermopower and Electrical Conductivity of LaTiO3 Epitaxial Films on LaAlO3 Substrate, 10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics, July 2017.
• Nobuhiro Nakamura, Junghwan Kim, Koji Yamamoto, Satoru Watanabe, Naomichi Miyakawa, Toshio Kamiya, Hideo Hosono. OLED Lighting with High Out-Coupling Efficiency and Reliability, Society for Information Display (SID), SID Symposium Digest of Technical Papers, Wiley, Vol. 48, No. 1, pp. 2035-2038, May 2017.  公式リンク  
  
• Hideo Hosono, Junghwan Kim, Toshio Kamiya, Nobuhiro Nakamura, Satoru Watanabe. Novel Inorganic Electron Injection and Transport Materials Enabling Large‐Sized Inverted OLEDs Driven by Oxide TFTs, Society for Information Display (SID), SID Symposium Digest of Technical Papers, Wiley, vol. 47, pp. 401-404, May 2016.  公式リンク  
  
• Junghwan Kim, Nobuhiro Nakamura, Toshio Kamiya, Hideo Hosono. NBIS-Stable Oxide Thin-Film Transistors Using Ultra-Wide Bandgap Amorphous Oxide Semiconductors, Society for Information Display, SID Symposium Digest of Technical Papers, vol. 47, pp. 951-953, May 2016.  公式リンク  
  
• Junghwan Kim, Satoru Watanabe, Eiji Matsuzaki, Nobuhiro Nakamura, Naomichi Miyakawa, Yoshitake Toda, Toshio Kamiya, Hideo Hosono. Highly Efficient Inverted OLEDs Using a New Transparent Amorphous Oxide Semiconductor, SID 2015, SID 2015 DIGEST, Vol. P-177L, pp. 1714-1716, June 2015.
• Hidenori Hiramatsu, Hikaru Sato, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. Excitation laser dependence and control factor for crystallinity of cobalt-doped BaFe2As2 epitaxial films by pulsed laser deposition, Applied Superconductivity Conference 2014 (ASC2014), Aug. 2014.
• M. Kimura, T. Hasegawa, T. Matsuda, K. Ide, K. Nomura, T. Kamiya, H. Hosono. Light Irradiation and Applied Voltage History Sensors Using Amorphous In-Ga-Zn-O Thin- Film Transistors Exposed to Ozone Annealing and Fabricated under High Oxygen Pressure, THE 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES, Digest of AM-FPD2014, Vol. 5-3, p. 319, July 2014.
• H. Hiramatsu, H. Sato, T. Katase, T. Kamiya, H. Hosono. Heteroepitaxial Growth of Superconducting Ba(Fe,Co)2As2 Thin Films by Pulsed Laser Deposition Using Four Different Laser Wavelengths, The 8th International Conference on the Science and Technology for Advanced Ceramics (STAC-8), June 2014.
• Toshio Kamiya, Hideya Kumomi, Hideo Hosono. Multiple Origins of Near-VBM Defects and Passivation Effects in a-In-Ga-Zn-O; Digest of The 21st International Display Workshops 2014 (IDW'14), IDW'14(Dec.3-5, Niigata, Japan), AMD2-1, 2014.
• TOSHIO KAMIYA, K. Kimoto, N. Ohashi, Katsumi Abe, Yuichirou Hanyu, hideya kumomi, HIDEO HOSONO. Electron-Beam-Induced Crystallization of Amorphous In-Ga-Zn-O Thin Films Fabricated by UHV Sputtering, Proc. IDW'13, p. 280, Dec. 2013.
• T. Hasegawa, M. Inoue, T. Matsuda, M. Kimura, K. Nomura, T. Kamiya, H. Hosono. 3-D Stacked Complementary TFT Devices Using n-Type a-IGZO and p-Type F8T2 TFTs - Comparison between Stacked and Sided Configurations -, Proc. IDW'13, p. AMD6-3L, Dec. 2013.
• T. Kamiya, K. Ide, K. Nomura, H. Kumomi, H. Hosono. Structural Relaxation, Crystallization, and Defect Passivation in Amorphous In-Ga-Zn-O, Proc. IDW'13, p. 478, Dec. 2013.
• K. Abe, H. Kumomi, T. Kamiya, H. Hosono. Modeling of Transparent Amorphous Oxide Semiconductor Thin-Film Transistor, Proc. IDW'13, p. 311, Dec. 2013.
• H. Sato, T. Katase, H. Hiramatsu, T. Kamiya, H. Hosono. Pressure effects on superconducting properties of 122-type iron pnictide epitaxial films on several substrates, 6th International Symposium on Superconductivity (ISS 2013), Nov. 2013.
• Hidenori Hiramatsu, Takayoshi Katase, Hikaru Sato, Toshio Kamiya, Hideo Hosono. Unusual pressure effects on the superconductivity of 122-type (Ba1-xLax)Fe2As2 epitaxial films, International Workshop on Novel Superconductors and Super Materials 2013 (NS22013), Nov. 2013.
• H. Hiramatsu, T. Katase, H. Sato, T. Kamiya, H. Hosono. Enhancement of critical temperature up to 30 K of (Ba1-xLax)Fe2As2 epitaxial films by high pressures, The 12th Asia Pacific Physics Conference (APPC12), July 2013.
• Shogo Matsuda, Hikaru Sato, Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Thin Film Growth and Superconducting Properties of KFe2As2, The 7th International Conference on the Science and Technology of Advanced Ceramics (STAC-7), June 2013.
• Hidenori Hiramatsu, Takayoshi Katase, Hikaru Sato, Toshio Kamiya, Hideo Hosono. Effects of External Pressure on Superconducting Properties of (Ba1-xLax)Fe2As2 Epitaxial Films, The 7th International Conference on the Science and Technology of Advanced Ceramics (STAC-7), June 2013.
• Satoru Watanabe, Toshinari Watanabe, Kazuhiro Ito, Naomichi Miyakawa, Yoshitake Toda, Yudai Tomota, Setsuro Ito, Toshio Kamiya, Hideo Hosono. Electron Injecting Material for OLEDs driven by Oxide TFTs: Amorphous C12A7 Electride, SID 2013 DIGEST, Vol. 1473-1476, pp. P-142L, 2013.
• Mutsumi Kimura, Takayuki Hasegawa, Masashi Inoue, Kenji Nomura, Toshio Kamiya, Hideo Hosono. 3-D Stacked Complementary TFT Devicesusing n-type -IGZO and p-type F8T2 TFTs Operation Confirmation of NOT and NAND Logic Circuits, SID 2013 DIGEST, Vol. 995-998, p. 3, 2013.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Electronic Structure, Carrier Transport, Defects and Impurities in Amorphous Oxide Semiconductor, SID 2013 DIGEST, Vol. 11-13, No. 4, pp. 1, 2013.
• H. Hiramatsu, T. Katase, T. Kamiya, H. Hosono. Film growth of metastable rare-earth doped AeFe2As2 (Ae = Sr and Ba) and their superconducting properties, Applied Superconductivity Conference 2012 (ASC 2012), Oct. 2012.
• H. Sato, T. Katase, W. Kang, H. Hiramatsu, T. Kamiya, H. Hosono. Scaling of Mixed-State Hall Effect in Optimally Cobalt-Doped BaFe2As2 Epitaxial Films, Applied Superconductivity Conference 2012 (ASC 2012), Oct. 2012.
• Hidenori Hiramatsu, Takayoshi Katase, Soshi Iimura, Toshio Kamiya, Hideo Hosono. Metastable Rare-Earth (La and Ce) Doping and Superconductivity in BaFe2As2 Epitaxial Films, The 6th International Conference on the Science and Technology for Advanced Ceramics (STAC-6), June 2012.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Present Status, Knowledge and Issues of Oxide Semiconductor Technology, Proc.IDW '12 (2012/12/4-7, ) AMD3-1, Vol. 19, pp. 0405-0408, 2012.
• Hidenori Hiramatsu, Takayoshi Katase, Chris Sheehan, Vladimir Matias, Yoshihiro Ishimaru, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono. Iron Pnictide Films on Metal Tape Substrates with High Critical Current Density, International Conference on Novel SuperConductivity in Taiwan 2011 (ICNSCT 2011), Aug. 2011.
• T. Katase, Y. Ishimaru, A. Tsukamoto, H. Hiramatsu, T. Kamiya, K. Tanabe, H. Hosono. Robust grain boundary nature of iron pnictide Superconductors, Mater. Res. Soc. Spring Meeting, 2011.
• T. Katase, Y. Ishimaru, A. Tsukamoto, H. Hiramatsu, A. Tsukamoto, K. Tanabe, H. Hosono. Bicrystal grain boundary junction of Fe-based superconductor Co-doped BaFe2As2, The 15th Japan-US Workshop on Advanced Superconductors, 2011.
• T. Katase, Y. Ishimaru, A. Tsukamoto, H. Hiramatsu, T. Kamiya, K. Tanabe, H. Hosono. Josephson junction with Fe-based superconductor Co doped BaFe2As2 epitaxial film, Applied Superconductivity Conference, 2011.
• H. Hiramatsu, T. Katase, Y. Ishimaru, A. Tsukamoto, T. Kamiya, K. Tanabe, H. Hosono. Critical Current Density across Bicrystal Grain Boundary in Fe-based Superconductor Cobalt-Doped BaFe2As2, 5th Int. Conf. Sci. Technol. for Advanced Ceramics (STAC5) - 2nd Int. Conf. Advanced Materials Development and Integration (AMDI2), 2011.
• H. Hiramatsu, T. Katase, T. Kamiya, H. Hosono, Y. Ishimaru, A. Tsukamoto, K. Tanabe. High Critical Angle of Strong Link – Weak Link Transition in Co-Doped BaFe2As2, International Workshop on Novel Superconductors and Super Materials 2011 (NS22011), 2011.
• Hideo Hosono, Kenji Nomura, Toshio Kamiya. An Ambipolar Oxide TFT, SID Digest, Vol. 11, pp. 476-477, 2011.
• Kenji Nomura, Toshio Kamiya, Hideo Hosono. Bias stability for a-In-Ga-Zn-O-TFTs: Origin of threshold voltage instability and the role of thermal annealing and passivation, Proc. IDW'11, pp. 587-590, 2011.
• Hidenori Hiramatsu, Takayoshi Katase, Chris Sheehan, Vladimir Matias, Yoshihiro Ishimaru, Akira Tsukamoto, Toshio Kamiya, KeiichiTanabe, Hideo Hosono. Grain boundary transport properties and high Jc films on metal substrates of BaFe2As2:Co, Superconductivity Centennial Conference 2011 (EUCAS-ISEC-ICMC 2011), 2011.
• T. Katase, H. Hiramatsu, T. Kamiya, H. Hosono. Chemical Stability of Co-doped AEFe2As2 (AE = Ba and Sr) Epitaxial Thin Films and Improvement of Crystalline Qualities and Superconducting Properties, Mater. Res. Soc. Spring Meeting, 2010.
• T. Katase, Y. Ishimaru, A. Tsukamoto, H. Hiramatsu, T. Kamiya, K. Tanabe, H. Hosono. Grain boundary properties of iron-pnictide superconductor, Co-doped BaFe2As2, The 23rd International Symposium on Superconductivity 2010, 2010.
• Toshio Kamiya, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono. Chemical stability of AeCuFCh and AeFe2As2 (Ae = Mg–Ba, Eu; Ch = S, Se) studied by first-principles calculations, 4th International Conference on Science and Technology for Advanced Ceramics (STAC-4), 2010.
• Toshio KAMIYA, Kenji NOMURA, Hideo HOSONO. Defects and doping in amorphous oxide semiconductor studied by first-principles calculations, Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics, 2B-I_1, Nov. 2009.
• Toshio KAMIYA, Hidenori HIRAMTSU, Hiroshi YANAGI, Hideo HOSONO. Electronic structures of defects and impurities in layered mixed anion compounds, Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics, P4-01, Nov. 2009.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Impact of Subgap States on Peculiar Characteristics of Amorphous Oxide Thin-Film Transistor, Proc. IDW'09, 1673,, Nov. 2009.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Amorphous oxide semiconductor: Factors determining TFT performance and stability, 9th Int. Meeting on Inf. Display (IMID2009), 26-2, Oct. 2009.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. What have been clarified for amorphous oxide semiconductors?, IDMC•3DSA•Asia Display'09, Thu-S22-03, Oct. 2009.
• Toshio Kamiya, Hidenori Hiramatsu, Takayoshi Katase, Masahiro Hirano, Hideo Hosono. Impurities in FeAs-based superconductor, SrFe2As2, 3rd International Symposium on Science and Technology of Advanced Ceramics(STAC-3), June 2009.
• Tomomasa Shinozaki, Kenji Nomura, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Epitaxial growth of GaN films on InGaZnO4 single crystalline buffer layer, 6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-6), Apr. 2009.
• Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Heteroepitaxial thin film growth of layered iron-based pnictide superconductors and their electrical properties, The 14th US-Japan Workshop on Advanced Superconductors, 2009.
• T. Katase, K. Nomura, H. Yanagi, H. Ohta, T. Kamiya, M. Hirano, H. Hosono. Atomic and electronic structures of ScAlMgO4 and over-grown GaN epitaxial film, 3rd International Symposium on Science and Technology of Advanced Ceramics (STAC-3),, 2009.
• T. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono. Low-Temperature, Large-Domain Growth of ZnO and GaN Epitaxial Films on Lattice-Matched Buffer Layers, STAC-STSI, 2008.
• T. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono. Atomically-flat ScAlMgO4 single-crystalline films fabricated by reactive solid-phase epitaxy (R-SPE): Effects on growth of ZnO and GaN, 2008 Euro Mater. Res. Soc. Fall Meeting, 2008.
• Chiao-Shun Chuang, Tze-Ching Fung, Barry G. Mullins, Kenji Nomura, Toshio Kamiya, Han-Ping David Shieh, Hideo Hosono, Jerzy Kanicki. Photosensitivity of Amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays, SID '08 Proc., 13, 2008.
• Hiroshi Yanagi, Ki-Beom Kim, Maiko Kikuchi, Masashi Miyakawa, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Interfacial electronic structure and electron injection property at C12A7:e- cathode/Alq3 interface., E-MRS 2007 Spring Meeting, May 2007.
• T. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono. Fabrication of ScAlMgO4 single-crystalline thin films and its application to lattice-matched buffer layer for ZnO, Korea-Japan Workshop on Nanomaterials for IT, Thin Solid Films,, Vol. 516, pp. 5842-5846, 2007.

国内会議発表 (査読有り)

• Xinyi He, Takayoshi Katase, Toshio Kamiya. Simultaneous realization of high thermoelectric performance and air stability of inverse-perovskite oxides, 日本セラミックス協会第37回秋季シンポジウム, Sept. 2024.
• Zhongxu Hu, Xinyi He, Takayoshi Katase, Hiroyuki Noto, Hiyori Uehara, Toshio Kamiya. Synthesis and thermoelectric properties of perovskite chalcogenides Ba(Zr,Hf)S3 with ultra-low thermal conductivity, 日本セラミックス協会第37回秋季シンポジウム, Sept. 2024.
• Choi Sangjin, 片瀬 貴義, 神谷 利夫. BaTiO3-xHxエピタキシャル薄膜成長と熱電特性, 日本セラミックス協会第37回秋季シンポジウム, Sept. 2024.
• 落合 将寛, 片瀬 貴義, 神谷 利夫. 歪みを制御したSrTiO3薄膜への水素ドーピングと熱電特性, 日本セラミックス協会第37回秋季シンポジウム, Sept. 2024.
• Zan Yang, Xinyi He, Takayoshi Katase, Toshio Kamiya. Extracting Phonon and Carrier Transport Information from Dielectric Response to Accelerate Thermoelectric Materials Discovery, 日本セラミックス協会第37回秋季シンポジウム, Sept. 2024.
• Xinyi He, Shigeru Kimura, Takayoshi Katase, Terumasa Tadano, Satru Matsuishi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Toxic-Element-Free Inverse-Perovskite Oxide Ba3BO (B = Ge, Si) with Low Thermal Conductivity and High Thermoelectric Performance, 2024年 応用物理学会 秋季学術講演会, Sept. 2024.
• 片瀬 貴義, 牛島 廉, 小松 武人, 平松 秀典, 細野 秀雄, 神谷 利夫. SrTiO3-xHx焼結体の高温直接合成と熱電特性, 日本セラミックス協会第37回秋季シンポジウム, Sept. 2024.
• 樋口龍生, ホシンイ, 片瀬 貴義, 神谷 利夫. AE2ZnN2 (AE = Ca, Sr, Ba)の電子・熱伝導特性の第一原理計算, 日本セラミックス協会第37回秋季シンポジウム, Sept. 2024.
• 老田知樹, ホシンイ, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 層状半導体Bi2OS2高純度試料のメカノケミカル合成と電気特性, 日本セラミックス協会2024年会, Mar. 2024.
• 熊谷颯士, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. バッファ層挿入による(100)配向岩塩型(Sn1-xCax)Se薄膜の移動度向上, 日本セラミックス協会2024年会, Mar. 2024.
• 鈴木 朝也, 井手 啓介, 片瀬 貴義, 細野 秀雄, 神谷 利夫. 元素置換InGaZnO4の構造安定性と電子構造の支配因子, 応用物理学会第71回春季学術講演会, Mar. 2024.
• 木村 公俊, Kuan-Ju Zhou, 井手 啓介, 片瀬 貴義, 平松 秀典, 細野 秀雄, Ting-Chang Chang, 神谷 利夫. 機械学習による多値逆問題解析:アモルファス酸化物半導体トランジスタの欠陥分布・電子輸送を例に, 応用物理学会第71回春季学術講演会, Mar. 2024.
• 片瀬貴義, ホシンイ, 木村茂, 只野央将, 松石聡, 平松秀典, 細野秀雄, 神谷利夫. 逆ペロブスカイト型Ba3BO（B = Si, Ge）：低い格子熱伝導率と高い変換効率を有する環境調和型熱電材料, 日本セラミックス協会2024年会, Mar. 2024.
• 片瀬貴義, ホシンイ, 木村茂, 只野央将, 松石聡, 平松秀典, 細野秀雄, 神谷利夫. 逆ペロブスカイト型Ba3BO（B = Si, Ge）：低い格子熱伝導率と高い変換効率を有する環境調和型熱電材料, 日本セラミックス協会2024年会, Mar. 2024.
• 牛島廉, 小松 武人, 片瀬貴義*, 平松秀典, 細野秀雄, 神谷利夫. SrTiO3-xHx焼結体の高温直接合成と窒素アニオン部分置換による熱電特性向上, 日本セラミックス協会2024年会, Mar. 2024.
• 小縣克馬, 片瀬貴義, 神谷利夫. Fe欠損構造を有する層状TlFe1.6Se2の低熱伝導率と熱電変換特性, 日本セラミックス協会第43回電子材料研究討論会, Nov. 2023.
• 吉川桜良, ホシンイ, 片瀬貴義, 上田茂典, 小林俊介, 仲山啓, 加藤丈晴, 森分博紀, 神谷利夫. 超ワイドギャップ酸化物SrO薄膜の水素化により観測された電子伝導性と起源, 日本セラミックス協会第43回電子材料研究討論会, Nov. 2023.
• 清水篤, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 機械学習による多孔質アモルファス In-Ga-Zn-O 薄膜の成膜条件最適化, 薄膜材料デバイス研究会第20回研究集会「薄膜材料デバイス研究会が見据える次世代技術・未来デバイス」, Nov. 2023.
• 南島悠人, ホシンイ, 井手啓介, 片瀬貴義, 神谷利夫. 第一原理計算による環境調和型熱電変換材料の探索システム構築, 薄膜材料デバイス研究会第20回研究集会「薄膜材料デバイス研究会が見据える次世代技術・未来デバイス」, Nov. 2023.
• 木村公俊, K. Zhou, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, T. Chang, 神谷利夫. 機械学習を用いたアモルファス In-Ga-Zn-O トランジスタの高速特性予測および欠陥解析, 薄膜材料デバイス研究会第20回研究集会「薄膜材料デバイス研究会が見据える次世代技術・未来デバイス」, Nov. 2023.
• 鈴木朝也, 井手啓介, 片瀬貴義, 細野秀雄, 神谷利夫. InGaZnO4 型ホモロガス酸化物における高移動度半導体の設計, 薄膜材料デバイス研究会第20回研究集会「薄膜材料デバイス研究会が見据える次世代技術・未来デバイス」, Nov. 2023.
• 福地厚, 片瀬貴義, 神谷利夫. Ruddlesden–Popper構造Ca2RuO4薄膜における陽イオンインターカレーション型反応の観測と室温電流誘起相転移の実現, 日本セラミックス協会第43回電子材料研究討論会, Nov. 2023.
• 片瀬貴義, 阿部聡太, 神谷利夫. 非平衡(Pb1-xSnx)Se薄膜トランジスタの電界誘起抵抗変化, 日本セラミックス協会第43回電子材料研究討論会, Nov. 2023.
• Xinyi He, Seiya Nomoto, Takayoshi Katase, Terumasa Tadano, Toshio Kamiya. Strong phonon scattering and thermoelectric property enhancement of SrTiO3 by hydride anion substitution, 日本セラミックス協会第36回秋季シンポジウム, Sept. 2023.
• 片瀬貴義, 木村公俊, ホシンイ, 神谷利夫. 水素置換によるSrTiO3エピタキシャル薄膜の熱電変換効率向上, 日本セラミックス協会第36回秋季シンポジウム, Sept. 2023.
• 椿 啓司, 福地 厚, 有田 正志, 片瀬 貴義, 神谷 利夫, 高橋 庸夫. Ca2RuO4薄膜が示す電流誘起転移型の非線形伝導現象に対する基板エピタキシャル応力の影響, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• Xinyi He, Seiya Nomoto, Takayoshi Katase, Terumasa Tadano, Toshio Kamiya. Thermoelectric Performance Enhancement of SrTiO3 with Reduced Thermal Conductivity by Hydride Anion Substitution, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• Zhongxu Hu, Mari Hiramatsu, Xinyi He, Takayoshi Katase, Toshio Kamiya. Thermal Conductivity Switching by 2D-3D Structural Phase Transition in (Sn1xPbx)S above Room Temperature, 日本セラミックス協会第36回秋季シンポジウム, Sept. 2023.
• Zan Yang, Linwei Li, Xinyi He, Takayoshi Katase, Toshio Kamiya. Ultra-low lattice thermal conductivity of SnSb2Se4 with one-dimensional Sn-Se chains, 日本セラミックス協会第36回秋季シンポジウム, Sept. 2023.
• 今井志明, 中田壮哉, 木村公俊, 片瀬貴義, 神谷利夫, 柴山茂久, 坂下満男, 中塚理, 黒澤昌志. 半絶縁性基板上Ge1−xSnx薄膜の低温熱電物性, 第70回 応用物理学会春季学術講演会, Mar. 2023.
• 福地 厚, 椿 啓司, 片瀬 貴義, 神谷 利夫, 有田 正志, 高橋 庸夫. Ca2RuO4 薄膜が示す温度誘起金属–絶縁体転移に依存しないモット型抵抗スイッチング現象, 第70回 応用物理学会春季学術講演会, Mar. 2023.
• 椿 啓司, 福地 厚, 片瀬 貴義, 神谷 利夫, 有田 正志, 高橋 庸夫. 急峻な温度誘起金属絶縁体転移を持たないCa 2RuO 4 薄膜で観測された高速・不連続的な抵抗スイッチング現象, 第58回応用物理学会北海道支部/第19回日本光学会北海道支部合同学術講演会, Jan. 2023.
• ホ シンイ, 片瀬貴義, 井手啓介, 細野秀雄, 神谷利夫. ZnO中の水素複合欠陥, 薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」, Nov. 2022.
• 嵯峨野太一, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. スパッタリング法によるアモルファス酸化ガリウム薄膜の作製とダイオー ド特性の評価, 薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」, Nov. 2022.
• 門野太助, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. アモルファス 12CaO・7Al2O3 を用いた ReRAM, 薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」, Nov. 2022.
• フゾンシュ, 平松茉莉, ホシンイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 非平衡(Sn1-xPbx)S固溶体の格子間Snによる高濃度電子ドーピング, 日本セラミックス協会第42回電子材料研究討論会, Nov. 2022.
• 清水篤, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 超高真空スパッタリング装置を用いた高移動度多結晶 Zn3N2 薄膜, 薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」, Nov. 2022.
• Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, hidenori hiramatsu, HIDEO HOSONO, TOSHIO KAMIYA. Degenerated hole doping and enhanced thermoelectric figure-of-merit ZT in layered SnSe by isovalent Te ion substitution, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 樋口龍生, 片瀬貴義, 半沢幸太, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 層状SnSe非平衡相のエピタキシャル膜による安定化と構造・電気特性, 日本セラミックス協会 第35回秋季シンポジウム, Sept. 2022.
• ホシンイ, チェン ジンシュアイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. (111)配向非平衡岩塩型(Sn,Ca)Seエピタキシャル薄膜のドメイン境界の電気特性, 日本セラミックス協会 第35回秋季シンポジウム, Sept. 2022.
• フゾンシュ, 平松茉莉, ホシンイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 非平衡(Sn,Pb)S固溶体の合成: 格子間Snによる電子ドーピングと強フォノン散乱, 日本セラミックス協会 第35回秋季シンポジウム, Sept. 2022.
• 片瀬貴義, 西村優作, ホ シンイ, 只野央将, 井手啓介, 気谷卓, 半沢幸太, 平松秀典, 川路均, 細野秀雄, 神谷利夫. 準安定(Pb1-xSnx)Se固溶体の2次元-3次元構造転移に伴う熱伝導率変調, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 片瀬貴義, ホ シンイ, チェン ジンシュアイ, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 高移動度岩塩型(Sn,Ca)Se準安定相のエピタキシャル薄膜成長とキャリア輸送特性, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• フゾンシュ, 平松茉莉, ホシンイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. (Sn1-xPbx)S固溶体の非平衡合成と熱・電気特性制御, 応用物理学会第6回フォノンエンジニアリング研究会, July 2022.
• Liwei Li, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya. Local bonding structures in amorphous oxide semiconductors studied by DFT and machine-learning potential, 第60回日本セラミックス協会 セラミックス基礎科学討論会, Jan. 2022.
• ホ シンイ, チェン ジンシュアイ, 片瀬 貴義, 井手 啓介, 平松 秀典, 細野 秀雄, 神谷 利夫. 300cm2/Vs以上の粒内正孔移動度を示す非平衡岩塩型(Sn,Ca)Seエピタキシャル薄膜, 薄膜材料デバイス研究会 第18回研究集会, Nov. 2021.
• 木村茂, ホ シンイ, 片瀬 貴義, 井手 啓介, 平松 秀典, 細野 秀雄, 神谷 利夫. 逆ペロブスカイト型酸化物Ba3(Si,Ge)Oの高純度バルク合成と電気特性評価, 薄膜材料デバイス研究会 第18回研究集会, Nov. 2021.
• 福地厚, 椿啓司, 高橋庸夫, 片瀬貴義, 神谷利夫, 有田正志. Ca2RuO4薄膜における非線形伝導現象の高速化と不連続転移の観測, 日本物理学会2021年秋季大会, Sept. 2021.
• 椿 啓司, 福地 厚, 高橋 庸夫, 片瀬 貴義, 神谷 利夫, 有田 正志. Ca2RuO4エピタキシャル薄膜における電流誘起非線形伝導現象の高速化, 第82回応用物理学会秋季学術講演会, Sept. 2021.
• 福地 厚, 椿 啓司, 石田 典輝, 片瀬 貴義, 神谷 利夫, 有田 正志, 高橋 庸夫. Ca2RuO4薄膜における電流誘起抵抗転移のRu欠損量依存性, 2021年第68回応用物理学会春季学術講演会, Mar. 2021.
• 高橋 雄大, 片瀬 貴義, ホ シンイ, 只野 央将, 井手 啓介, 吉田 秀人, 河智 史朗, 山浦 淳一, 笹瀬 雅人, 平松 秀典, 細野 秀雄, 神谷 利夫. 準安定(Pb1-xSnx)Se薄膜の2次元-3次元構造転移と巨大電子物性変調, 2021年第68回応用物理学会春季学術講演会, Mar. 2021.
• 井手啓介, 笠井悠莉華, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 超ワイドギャップアモルファス酸化物半導体を用いたショットキーバリアダイオードの逆バイアス特性, 2021年第68回応用物理学会春季学術講演会, Mar. 2021.
• 福地厚, 椿啓司, 石田典輝, 片瀬貴義, 神谷利夫, 高橋庸夫, 有田正志. Ca2RuO4エピタキシャル薄膜が示す電流誘起絶縁体-金属転移とその抵抗変化特性, 日本セラミックス協会 第40回電子材料研究討論会, Nov. 2020.
• ホーシンイ, 片瀬貴義, 井手啓介, 細野秀雄, 神谷利夫. Density functional study on electronic structure, defect formation and carrier doping control of AETMN2 (AE=Ca,Sr,Ba, TM=Ti,Zr,Hf), 日本セラミックス協会 第40回電子材料研究討論会, Nov. 2020.
• 橋本幸花, ホーシンイ, 片瀬貴義, 井手啓介, 細野秀雄, 神谷利夫. 超ワイドギャップアルカリ土類酸化物への電子ドーピングの理論的検討, 日本セラミックス協会 第40回電子材料研究討論会, Nov. 2020.
• 西村優作, ホーシンイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 準安定(Pb1-xSnx)Se固溶体バルク試料の合成と2次元-3次元構造転移に伴う巨大電子物性変調, 日本セラミックス協会 第40回電子材料研究討論会, Nov. 2020.
• 長達也, ホーシンイ, 森大介, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 層状半導体AE2CuInO3Ch (AE :アルカリ土類、Ch :カルコゲン)の光電子物性と両極性伝導制御の可能性, 日本セラミックス協会 第40回電子材料研究討論会, Nov. 2020.
• 白石明浩, ホー シンイ, 渡邉脩人, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 2次元層状半導体AETMN2 (AE = Sr, Ba, TM = Ti, Zr, Hf)の高純度試料合成と電気・磁気特性, 日本セラミックス協会 第40回電子材料研究討論会, Nov. 2020.
• 木村公俊, 樋口雄飛, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. LaNiO3極薄膜の金属-絶縁体転移に伴う巨大フォノンドラッグ熱電効果の発現, 日本セラミックス協会 第40回電子材料研究討論会, Nov. 2020.
• 木村公俊, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. LaNiO3超薄膜の表面終端処理によるフォノンドラッグ熱電能の増強効果, 薄膜材料デバイス研究会 第17回研究会「薄膜デバイスの原点」, Nov. 2020.
• 加藤昭宏, 笠井悠莉華, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 超ワイドギャップa-Ga-O薄膜トランジスタへの水素プラズマ処理効果, 薄膜材料デバイス研究会 第17回研究会「薄膜デバイスの原点」, Nov. 2020.
• 片瀬貴義, 樋口雄飛, 木村公俊, 只野央将, 藤岡淳, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. トレードオフの相関を破る酸化物熱電材料の高出力化, 第17回 日本熱電学会学術講演会, Sept. 2020.
• 椿啓司, 石田典輝, 福地厚, 片瀬貴義, 神谷利夫, 有田正志, 高橋庸夫. 電流誘起型金属絶縁体転移物質Ca2RuO4薄膜が示す高い安定性を持った抵抗スイッチング動作, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 福地厚, 椿啓司, 石田典輝, 高橋庸夫, 片瀬貴義, 神谷利夫, 有田正志. Ca2RuO4エピタキシャル薄膜における非線形伝導現象, 日本物理学会 2020年秋季大会, Sept. 2020.
• 西間木祐紀, 井手啓介, 渡邊脩人, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 希土類添加アモルファス酸化物半導体の電気物性とトランジスタ特性, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 森大介, 渡邊脩人, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 層状半導体Sr2CuMO3S(M= Ga, In)の合成と光電子物性, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 山本千紘, 半沢幸太, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫:. FeSb2薄膜のヘテロエピタキシャル成長と熱電特性, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• ホシンイ, シャオチーウェン, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 第一原理計算による層状 (AE = Ca, Sr, Ba)の電子構造と欠陥生成・キャリアドーピング機構の理論解析, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 松尾健志, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. ガラス上に成長させた層状セレン化スズ薄膜の電気特性と薄膜トランジスタ, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 樋口雄飛, 井手啓介, Christian A. Niedermeier, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. エピタキシャル歪により増強されるLaNiO3極薄膜のフォノンドラッグ熱電特性, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 井手啓介, 二角勇毅, 渡邉脩人, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. Cr添加アモルファス酸化ガリウム薄膜のフォトルミネッセンス特性, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 渡邊脩人, 井手啓介, 片瀬貴義, 笹瀬雅人, 戸田喜丈, 金正煥, 上田茂典, 堀場弘司, 組頭広志, 平松秀典, 細野秀雄, 神谷利夫. アモルファス酸化物半導体をホストとする蛍光体を用いた直流駆動型発光素子の室温形成, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 笠井悠莉華, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 超ワイドバンドギャップアモルファス酸化物半導体a-Ga-Oを用いたショットキーダイオードの作製, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 二角勇毅, 渡邉脩人, 井手啓介, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 遷移金属元素を発光中心としたアモルファス酸化物半導体蛍光体薄膜の探索, 第56回 セラミックス基礎科学討論会, Jan. 2018.
• 井手 啓介, 岸田 陽介, 片瀬 貴義, 平松 秀典, 上田 茂典, 雲見 日出也, 細野 秀雄, 神谷 利夫. アモルファス酸化物半導体の価電子帯直上欠陥の分離, 第78回 応用物理学会秋季学術講演会, Sept. 2017.
• 平松秀典, 片瀬貴義, 神谷利夫, 細野秀雄. 層状鉄セレン化物モット絶縁体TlFe1.6Se2を使った電気二重層トランジスタ, 第75回応用物理学会秋季学術講演会, Sept. 2014.
• 平松 秀典, 佐藤 光, 片瀬 貴義, 神谷 利夫, 細野 秀雄. PLD法による鉄系超伝導体BaFe2As2薄膜の膜質決定要因の解明と等方的な高臨界電流密度の実現, 日本金属学会 2014年秋期(第155回)講演大会, Sept. 2014.
• 平松秀典, 佐藤光, 片瀬貴義, 神谷利夫, 細野秀雄. PLD法によるCo添加BaFe2As2エピタキシャル成長の励起波長依存性と膜質の決定要因, 第61回応用物理学会春季学術講演会, Mar. 2014.
• 平松秀典, 片瀬貴義, 佐藤光, 神谷利夫, 細野秀雄. 鉄系超伝導体(Ba1-xLax)Fe2As2薄膜の特異な圧力相図, 第52回セラミックス基礎科学討論会, Jan. 2014.
• 松田匠悟, 佐藤光, 片瀬貴義, 平松秀典, 神谷利夫, 細野秀雄. カリウムを主成分とする鉄系超伝導体薄膜のヘテロエピタキシャル成長, 第52回セラミックス基礎科学討論会, Jan. 2014.
• Hideo Hosono, Eiji Matsuzaki, Yoshitake Toda, Junghwan Kim, Toshio Kamiya, Satoru Watanabe, Nobuhiro Nakamura, Naomichi Miyakawa. Transparent Amorphous Oxide Semiconductors for Efficient and Stable Electron Transport Layers in Organic LEDs and Lightings, Proc. the International Display Workshops (IDW2014), Vol. 21, pp. 649-650 (OLED2-4L), 2014.
• 平松秀典, 片瀬貴義, 佐藤光, 神谷利夫, 細野秀雄. 高圧下における(Ba1-xLax)Fe2As2エピタキシャル薄膜の臨界温度上昇, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 佐藤 光, 片瀬貴義, ワンナン カン, 平松秀典, 神谷利夫, 細野秀雄. 高Jc BaFe2As2:Coエピタキシャル薄膜における特異なホールスケーリング, 第73回応用物理学会学術講演会, Sept. 2012.
• 片瀬 貴義, 平松 秀典, 神谷 利夫, 細野 秀雄. バルク不安定相(Ba,RE)Fe2As2のエピタキシャル薄膜成長と超伝導特性, 2012年秋季 第73回応用物理学会学術講演会, 2012.
• 片瀬貴義, 平松秀典, 神谷利夫, 細野秀雄. High critical current density 4MA/cm2 in Co-doped BaFe2As2 epitaxial films grown on (La,Sr)(Al,Ta)3 substrates without buffer layers, 2011年秋季 第72回応用物理学会学術講演会, 2011.
• 平松秀典, 片瀬貴義, ヴラディミル マティアス, クリス シーハン, 石丸喜康, 神谷利夫, 田辺圭一, 細野秀雄. 金属テープ基板上への高臨界電流密度Co添加BaFe2As2薄膜の作製, 第72回応用物理学会学術講演会, 2011.
• 片瀬貴義, 石丸喜康, 塚本晃, 平松秀典, 神谷利夫, 田辺圭一, 細野秀雄. 鉄系超伝導体Co添加BaFe2As2エピタキシャル薄膜の粒界特性, 2011年春季 第58回応用物理学会関係連合講演会, 2011.
• 片瀬貴義, 石丸喜康, 塚本晃, 平松秀典, 神谷利夫, 田辺圭一, 細野秀雄. Co添加BaFe2As2薄膜のバイクリスタル接合を用いた超伝導量子干渉素子, 2010年秋季 第71回応用物理学会学術講演会, 2010.
• 片瀬貴義, 石丸喜康, 塚本晃, 平松秀典, 神谷利夫, 田辺圭一, 細野秀雄. 鉄系超伝導体Co添加BaFe2As2エピタキシャル薄膜によるジョセフソン接合, 2010年春季 第57回応用物理学会関係連合講演会, 2010.
• 篠崎智正, 野村研二, 片瀬貴義, 神谷利夫, 平野正浩, 細野秀雄. 層状酸化物結晶InGaZnO4の単結晶薄膜作製とバッファー層への応用, 薄膜材料デバイス研究会 第６回研究集会, Nov. 2009.
• 河村賢一, 平松秀典, 片瀬貴義, 神谷利夫, 平野正浩, 細野秀雄. 時間分解テラヘルツ分光によるFeAs系エピ膜の測定, 第56回応用物理学関係連合講演会, 2009.
• 片瀬貴義, 平松秀典, 神谷利夫, 細野秀雄. 原子平坦面を有する鉄系高温超伝導体Co添加BaFe2As2薄膜の作製, 2009年秋季 第70回応用物理学会学術講演会, 2009.
• 平松秀典, 片瀬貴義, 神谷利夫, 平野正浩, 細野秀雄. Superconductivity in Epitaxial Thin Films of Co-doped SrFe2As2 with Bilayered FeAs structures and their Magnetic Anisotropy, 2009年秋季 第70回 応用物理学会 学術講演会, 2009.
• 平松秀典, 片瀬貴義, 神谷利夫, 平野正浩, 細野秀雄. SrFe2As2における水誘起超伝導, 2009年秋季 第70回 応用物理学会 学術講演会, 2009.
• 片瀬貴義, 野村研二, 篠崎智正, 柳博, 太田裕道, 神谷利夫, 平野正浩, 細野秀雄. GaN薄膜成長におけるScAlMgO4格子整合バッファ層の効果, 薄膜材料デバイス研究会第5回研究集会, 2008.
• 片瀬貴義, 野村研二, 太田裕道, 柳博, 神谷利夫, 平野正浩, 細野秀雄. R-SPE法によるScAlMgO4単結晶薄膜の作製とZnO格子整合バッファ層への応用, 2008年春季 第55回応用物理学関係連合講演会, 2008.
• 片瀬貴義, 野村研二, 太田裕道, 柳博, 神谷利夫, 平野正浩, 細野秀雄. 反応性固相エピタキシャル成長法におけるホモロガスInGaO3(ZnO)m薄膜成長のBiフラックス効果, 日本セラミックス協会 2007年年会, 2007.
• 片瀬貴義, 野村研二, 太田裕道, 柳博, 神谷利夫, 平野正浩, 細野秀雄. ホモロガス酸化物InGaO3(ZnO)m単結晶薄膜のBiフラックスによる高品質化, 薄膜材料デバイス研究会第3回研究集会, 2006.

国際会議発表 (査読なし・不明)

• Takayoshi Katase, Xinyi He, Shigeru Kimura, Masashi Kurosawa, Terumasa Tadano, Satoru Matsuishi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Design of environmentally-benign high-ZT thermoelectric materials, The 4th International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture (DEJI2MA2024), Oct. 2024.
• Toshio Kamiya, Masatoshi Kimura, Keisuke Ide, Takayoshi Katase. Tandem neural network for direct solution of multivalued inverse problem, The 4th International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture (DEJI2MA2024), Oct. 2024.
• Takayoshi Katase, Xinyi He, Toshio Kamiya. Design of low thermal conductivity and thermal switching materials, MRM2023/IUMRS-ICA2023, Dec. 2023.
• Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya. Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density, 2021 International Conference on Solid State Devices and Materials (SSDM 2021), Sept. 2021.
• Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Enhanced thermoelectric power-factors by strain control in stongly correlated lanthunum titanate, Materials Research Meeting 2019, Dec. 2019.
• Keiji Tsubaki, Atsushi Tsurumaki-Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi. Metal-insulator transition in Ca2RuO4 thin films with a high sensitivity to electrical stiumuli, The 3rd Workshop on Functional Materials Science (FMS2019), Dec. 2019.
• Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya. Single crystal growth and intrinsic electron mobility of cubic SrGeO3, Materials Research Meeting 2019, Dec. 2019.
• Keisuke Ide, Yurika Kasai, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Hydrogen doping in ultra-widegap amorphous oxide semiconductor, amorphous Ga-O, Materials Research Meeting 2019, Dec. 2019.
• Naoto Watanabe, Keisuke Ide, Takayoshi Katase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Light emitting diodes on glass using amorphous oxide semiconductor thin-film phosphors, rare-earth doped a-Ga-O, Materials Research Meeting 2019, Dec. 2019.
• Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya. Density Functional Study on Defects and Doping for Layered Ternary Nitride, SrTiN2, Materials Research Meeting 2019, Dec. 2019.
• Yutaro Kobayashi, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Structural phase transition and opto-electronic properties of oxide semiconductor solid solution, (Ba,Sr)(Sn,Ti)O3, Materials Research Meeting 2019, Dec. 2019.
• Toshio Kamiya, Xinyi He, Zewen Xiao, Keisuke Ide, Takayoshi Katase, Hideo Hosono. Structures and Electronic States of Hydrogen in Inorganic Semiconductors with Different Anions, Materials Research Meeting 2019, Dec. 2019.
• Keisuke Ide, Naoto Watanabe, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Low-temperature fabrication of phosphor thin-film and light emitting device using amorphous oxide semiconductor, International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019), Nov. 2019.
• Takayoshi Katase, Yuhi Higuchi, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Epitaxial structure and phonon-drag thermoelectric properties of strain controlled LaNiO3 thin films, The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4), Oct. 2019.
• Keisuke Ide, Yurika Kasai, Kosuke Takenaka, Yuichi Setsuhara, Atsushi Hiraiwa, Hiroshi Kawarada, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Effect of hydrogen plasma treatment for ultra-wide bandgap amorphous oxide semiconductor, amorphous Ga-O, The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4), Oct. 2019.
• Masashi Kurosawa, Masaya Nakata, Keisuke Ide, Takayoshi Katase, Toshio Kamiya. Temperature dependence of thermoelectric properties of Ge1−xSnx layers grown by molecular beam epitaxy, The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4), Oct. 2019.
• Masatoshi Kimura, Yuhi Higuchi, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Epitaxial structure and thickness dependent phonon-drag thermoelectric properties of LaNiO3 thin film on LaAlO3 (001) substrate, 11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11), Oct. 2019.
• Keisuke Ide, Yuki Nishimagi, Naoto Watanabe, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Optoelectrical properties and thin-film transistor operation of rare-earth-doped amorphous oxide semiconductors, 11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11), Oct. 2019.
• Tatsuya Cho, Daisuke Mori, Xiyi He, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Synthesis and opto-electronic properties of layered oxychalcogenides, AE2CuInO3Ch (AE = Ca, Sr, Ba, and Ch = S, Se, Te), 11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11), Oct. 2019.
• Yuhi Higuchi, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Biaxial-strain induced power-factor enhancement in metallic strongly correlated transition metal oxide LaNiO3, 11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11), Oct. 2019.
• Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya. Single crystal growth of cubic SrGeO3 and estimation of intrinsic electron mobility, 11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11), Oct. 2019.
• Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Transition Metal-Doped Amorphous Oxide Semiconductor Thin-Film Phosphor, Chromium-Doped Amorphous Gallium Oxide, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Yutaro Kobayashi, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Structural phase transition and optoelectronic properties of Ba(Sn,Ce)O3 oxide semiconductor solid-solution system, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Yuhi Higuchi, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Power-factor enhancement by breaking trade-off relation of thermopower and electrical conductivity in epitaxially strained lanthanum nickelate, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Chihiro Yamamoto, Kota Hanzawa, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Epitaxial structure and phonon-drag thermoelectric properties of FeSb2 thin film on SrTiO3 (001) substrate, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya. Intrinsic and Extrinsic Defects in Layered Nitride Semiconductor", SrTiN2, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Naoto Watanabe, Keisuke Ide, Takayoshi Katase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Low-temperature fabrication of direct-current driven electroluminescent device using amorphous oxide semiconductor thin-film phosphor, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya. SrGeO3 single crystal growth and optical phonon spectrum analysis, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Yurika Kasai, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Hydrogen doping and carrier transport properties of amorphous Ga-O, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo. Thermoelectric property of MxSr1-xSi2 (M = Ca, Ba) film prepared by co-sputtering method, The Fifth Asia-Pacific Conference on Semiconducting Silicates and Related Materials, July 2019.
• Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Epitaxial strain-induced enhancement of thermoelectric power-factors, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• T. Kamiya, K. Ide, K. Takenaka, Y. Setsuhara, A. Hiraiwa, H. Kawarada, T. Katase, H. Hiramatsu, H. Hosono. Device characteristics of rare-earth doped amorphous oxide semiconductors, The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3), Sept. 2018.
• Yasuo Azuma, Yusaku Kobayashi, Keisuke Ide, Takayoshi Katase, Toshio Kamiya. Electrical characteristics of microfabricatd ferromagneticl material La0.67Sr0.33MnO3, The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development, Sept. 2018.
• K. Ide, K. Takenaka, Y. Setsuhara, A. Hiraiwa, H. Kawarada, T. Katase, H. Hiramatsu, H. Hosono, T. Kamiya. Effects of base pressure on optoelectronic properties of amorphous In–Ga–Zn–O, The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3), Sept. 2018.
• T. Katase, K. Ide, H. Hiramatsu, H. Hosono, T. Kamiya. Electric double layer transistor and electron-transport properties of (Tl,K)2Fe4Se5 thin films, The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3), Sept. 2018.
• Keisuke Ide, Masato Ota, Takayoshi Katase, Hidenori Hiramatsu, Shigenori Ueda, Hideo Hosono, Toshio Kamiya. Depth Analysis of Near Valence Band Mximum Defect States in Amorphous Oxide Semiconductors: In-Ga-Zn-O, Americas international Meeting on Electrochemistry and Solid state science (AiMES), Sept. 2018.
• Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Phonon-drag thermopower of epitaxially strained LaTiO3 thin films, International Conference on Materials and Systems for Sustainability 2017, Sept. 2017.
• Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Thermopower and electron carrier transport properties of epitaxially strained Nb-doped LaTiO3 thin films, The Tenth International Conference on the Science and Technology for Advanced Ceramics (STAC-10), Aug. 2017.
• Hidenori Hiramatsu, Hikaru Sato, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. Progress in Thin Films and Devices of Iron-based Layered Materials, EMN Qingdao Meeting: Iron and Iridium based Superconductivity, July 2015.
• Hidenori Hiramatsu, Hikaru Sato, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. Thin Films and Devices of Iron-based Layered Compounds, BIT's 4th Annual World Congress of Advanced Materials 2015 (WCAM 2015), May 2015.
• Hidenori Hiramatsu, Hikaru Sato, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. Thin Film Growth and Device Fabrication of Iron-Based Layered Materials: High-Performance Superconducting Films and Electric Double-Layer Transistors, The 27th International Symposium on Superconductivity 2014 (ISS2014), Nov. 2014.
• Hidenori Hiramatsu, Hikaru Sato, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. Superconductivity of indirectly electron-doped and isovalent-doped 122-type epitaxial films, nergy Materials Nanotechnology Summer Meeting 2014 (EMN 2014), June 2014.
• Hidenori Hiramatsu, Hikaru Sato, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. External pressure effects and critical current density of 122-type iron-pnictide thin films, Electronic Materials and Applications 2014, Jan. 2014.
• Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Metastable La doping and superconductivity of iron-pnictide BaFe2As2 epitaxial films, THE 14th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “網” [mou], Dec. 2013.
• Hidenori Hiramatsu, Hikaru Sato, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. Non-equilibrium impurity doping and critical current density of 122-type iron-pnictide superconductors, International Union of Materials Research Societies – International Conference in Asia – 2013 (IUMRS-ICA-2013), Dec. 2013.
• Hidenori Hiramatsu, Hikaru Sato, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. Thin film growth and vortex pinning of 122-type iron-pnictide superconductors, Energy Materials Nanotechnology (EMN) WEST Meeting 2013, Jan. 2013.
• Hidenori Hiramatsu, Takayoshi Katase, Hikaru Sato, Won Nam Kang, Toshio Kamiya, Hideo Hosono. Epitaxial growth and transport properties of 122-type iron-pnictide films, International Union of Materials Research Societies - International Conference on Electronic Materials 2012 (IUMRS-ICEM2012), Sept. 2012.
• Hidenori Hiramatsu, Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono. Thin film growth and device fabrication of iron-based superconductor, BaFe2As2, The 2012 Villa Conference on Iron-based Superconductors (VCFeSc 2012), Aug. 2012.
• Hiroshi Mizoguchi, Toshiaki Kuroda, Toshio Kamiya, Hideo Hosono. Superconducting compounds with square net, International Conference on Novel SuperConductivity in Taiwan, Aug. 2011.
• H. Mizoguchi, M. Hirano, H. Hosono, S. Matsuishi, T. Kuroda, T. Kamiya, H. Kawaji, M. Tachibana, E. Takayama-muromachi. Superconducting compounds with square net, International Workshop on Novel Superconductors and Super Materials 2011 (NS2 2011), Mar. 2011.
• Tetsuya Chiba, Toshio Kamiya, Hideo Hosono, Katsuro Hayashi. Low Temperature Oxidation of Si Using Novel Ceramic Atomic Oxygen Source, The Third International Conference on the Science and Technology for Advanced Ceramics (STAC-3), June 2009.

国内会議発表 (査読なし・不明)

• 片瀬貴義, ホ シンイ, チェン ジンシュアイ, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. (111)配向非平衡岩塩型(Sn,Ca)Seエピタキシャル薄膜のドメイン境界の電気特性, 日本セラミックス協会第42回電子材料研究討論会, Nov. 2022.
• K. Zhou, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, B. Huang, P. Yen, T. Chang, S. M. Sze. Suppressing Hydrogen Diffusion and Enhancing Reliability of Short-Channel InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering, 薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」, Nov. 2022.
• 片瀬貴義, ホ シンイ, チェン ジンシュアイ, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 準安定(Pb1-xSnx)Se固溶体の合成：2次元-3次元構造転移の誘起と電気・熱伝導率変調, 日本セラミックス協会第42回電子材料研究討論会, Nov. 2022.
• 福地厚, 椿啓司, 石田典輝, 有田正志, 片瀬貴義, 神谷利夫, 高橋庸夫. Ca2RuO4薄膜における電流/電場誘起金属絶縁体転移の観測, 日本物理学会 第75回年次大会, Mar. 2020.
• 木村 公俊, 樋口 雄飛, 片瀬 貴義, 蓑原 誠人, 麻生 亮太郎, 吉田 秀人, 井手 啓介, 平松 秀典, 上田 茂典, 組頭 広志, 細野 秀雄, 神谷 利夫. モット絶縁体LaNiO3超薄膜に発現する巨大フォノンドラッグ熱電効果, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 山本 千紘, ホ シンイ, 橋本 幸花, 片瀬 貴義, 井手 啓介, 平松 秀典, 上田 茂典, 細野 秀雄, 神谷 利夫. Sb添加SnSeのゼーベック・ホール係数の二重極性反転機構, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 樋口 雄飛, 片瀬 貴義, 只野 央将, 藤岡 淳, 井手 啓介, 平松 秀典, 細野 秀雄, 神谷 利夫. 熱起電力と導電率のトレードオフの関係を破る酸化物熱電材料LaNiO3の高出力特性, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 椿 啓司, 福地 厚, 石田 典輝, 有田 正志, 片瀬 貴義, 神谷 利夫, 高橋 庸夫. 電流誘起金属絶縁体転移を示すCa2RuO4 薄膜の電流–電圧特性の評価, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 山神 光平, 池田 啓祐, Yujun Zhang, 保井 晃, 高木 康多, 片瀬 貴義, 神谷利夫, 和達 大樹. 硬X 線光電子分光を用いたLaNiO3 薄膜の電子構造の基板応力依存性, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 加藤昭宏, 笠井悠莉華, 井手啓介, 片瀬貴義, 平松 秀典, 細野 秀雄, 神谷 利夫. 水素ドープアモルファス酸化ガリウムを用いた薄膜トランジスタ, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 渡邉 脩人, 白石 明浩, ホ シンイ, 片瀬 貴義, 井手 啓介, 松崎 功佑, 平松 秀典, 細野 秀雄, 神谷 利夫. 層状結晶半導体SrTiN2の高純度試料合成と光電子輸送特性, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 青山航大, 清水荘雄, 倉持豪人, 召田雅実, 秋池良, 井手啓介, 片瀬貴義, 神谷利夫, 舟窪浩. 二元同時スパッタ法で作製したAeSi2 膜(Ae= Ca, Sr, Ba)の構成相と電気特性, 日本セラミックス協会 第58回セラミックス基礎科学討論会, Jan. 2020.
• 山本千紘, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 層状SnSeへのSbドーピングと二重極性反転現象, 日本セラミックス協会 第58回セラミックス基礎科学討論会, Jan. 2020.
• 片瀬貴義, 樋口雄飛, 只野 央将, 藤岡 淳, 井手 啓介, 平松 秀典, 細野 秀雄, 神谷 利夫. トレードオフの相関を破る酸化物熱電材料の高出力特性, 応用物理学会新領域、第10回強的秩序とその操作に関わる研究グループ研究会, Jan. 2020.
• Takayoshi Katase, Yuhi Higuchi, Terumasa Tadano, Jun Fujioka, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Power-factor enhancement by breaking trade-off relation of electrical conductivity and thermopower in strain-controlled transition metal oxide, 日本セラミックス協会 第58回セラミックス基礎科学討論会, Jan. 2020.
• 井手啓介, 金正煥, 片瀬貴義, 細野秀雄, 神谷利夫. アモルファス酸化物半導体を用いた新規デバイスの開拓, 薄膜材料デバイス研究会 第16回研究集会「新時代に向けた薄膜材料のデバイス技術」, Nov. 2019.
• ホシンイ, 長達也, 森大介, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 層状半導体AE2CuInO3Ch (AE = Ca,Sr,Ba, Ch =S,Se,Te)の光電子輸送特性, 日本セラミックス協会 第39回電子材料研究討論会, Nov. 2019.
• 山本千紘, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. アンチモン添加による層状セレン化スズの二重極性反転, 日本セラミックス協会 第39回電子材料研究討論会, Nov. 2019.
• 笠井悠莉華, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. アモルファス酸化ガリウム薄膜への電子ドーピングとショットキーダイオード, 日本セラミックス協会 第39回電子材料研究討論会, Nov. 2019.
• 井手啓介, 渡邉脩人, 片瀬貴義, 笹瀬雅人, 金正煥, 上田茂典, 堀場弘司, 組頭広志, 平松秀典, 細野秀雄, 神谷利夫. 希土類添加アモルファス酸化物蛍光体薄膜の作製と発光素子への応用, 日本セラミックス協会 第39回電子材料研究討論会, Nov. 2019.
• 笠井悠莉華, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. アモルファス酸化ガリウムを用いたショットキーバリアダイオード特性と光応答, 薄膜材料デバイス研究会 第16回研究集会「新時代に向けた薄膜材料のデバイス技術」, Nov. 2019.
• Kaiwen Li, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Dong Lin, Jinhua Ren, Qun Zhang. Silicon doping and N2 ambient annealing effects on Zn3N2 thin film transistors, 薄膜材料デバイス研究会 第16回研究集会「新時代に向けた薄膜材料のデバイス技術」, Nov. 2019.
• 木村公俊, 樋口雄飛, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. LaNiO3エピタキシャル極薄膜に発現する巨大フォノンドラッグ熱電能, 応用物理学会結晶工学分科会・電子材料若手交流会共催 第2回結晶工学xISYSE 合同研究会, Nov. 2019.
• 片瀬貴義, 樋口雄飛, 木村公俊, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 引張歪から圧縮歪まで制御したLaNiO3薄膜の構造とフォノンドラッグ熱電特性, 日本セラミックス協会 第39回電子材料研究討論会, Nov. 2019.
• 青山 航大, 清水 荘雄, 倉持 豪人, 召田 雅実, 秋池 良, 井手 啓介, 片瀬 貴義, 神谷 利夫, 木村 好里, 舟窪 浩. 二元同時スパッタ法で作製したAeSi2膜の作製, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 椿 啓司, 福地 厚, 片瀬 貴義, 神谷 利夫, 有田 正志, 高橋 庸夫. 固相エピタキシャル成長Ca2RuO4薄膜における電流依存金属絶縁体転移の観測, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya. Density functional study on intrinsic and impurity defect formation in layered SrTiN2, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 山本 航平, 田久保 耕, Niko Pontius, Christian Schüßler-Langeheine, 片瀬 貴義, 神谷利夫, 和達 大樹. 時間分解共鳴軟X線回折でみるSrFeO3薄膜の反強磁性磁気秩序の光誘起過渡状態, 日本物理学会第74回年次大会, Mar. 2019.
• 青山 航大, 清水 荘雄, 倉持 豪人, 召田 雅実, 秋池 良, 井手 啓介, 片瀬 貴義, 神谷 利夫, 木村 好里, 舟窪 浩. 共スパッタ法で作製したBaxSr1-xSi2膜の熱電特性, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 笠井悠莉華, 井手啓介, 片瀬貴義, 平松 秀典, 細野 秀雄, 神谷 利夫. アモルファス酸化ガリウムへの水素ドープ効果とキャリア輸送特性, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 渡邉脩人, 井手啓介, 片瀬貴義, 笹瀬雅人, 戸田喜丈, 金正煥, 上田茂典, 堀場弘司, 組頭広志, 平松秀典, 細野秀雄, 神谷利夫. アモルファス酸化物半導体a-GaOxをホストとする蛍光体を用いた直流駆動型発光素子の低温作製, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 青山航大, 清水荘雄, 倉持豪人, 召田雅実, 秋池良, 井出啓介, 片瀬貴義, 神谷利夫, 木村好里, 舟窪浩. 共スパッタ法で作製したBaxSr1-xSi2膜の熱電特性, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 青山航大, 清水荘雄, 倉持豪人, 召田雅実, 秋池良, 井手啓介, 片瀬貴義, 神谷利夫, 木村好里, 舟窪 浩. 共スパッタ法で作製したBaxSr1-xSi2膜の作製と熱電特性評価, 第57回セラミックス基礎科学討論会, Jan. 2019.
• 西間木祐紀, 井手啓介, 渡邉脩人, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. アモルファス酸化物半導体薄膜トランジスタの希土類添加効果, 第57回セラミックス基礎科学討論会, Jan. 2019.
• 青山航大, 清水荘雄, 倉持豪人, 召田雅実, 秋池良, 井出啓介, 片瀬貴義, 神谷利夫, 木村好里, 舟窪浩. 共スパッタ法で作製したBaxSr1-xSi2膜の作製と熱電特性評価, 第57回セラミックス基礎討論会, Jan. 2019.
• 平松秀典, 半沢幸太, 佐藤 光, 片瀬貴義, 神谷利夫, 細野秀雄. 鉄系超伝導体の薄膜成長とデバイス作製, 鉄系高温超伝導体発見１０周年記念合同シンポジウム, June 2018.
• 井手 啓介, 太田 雅人, 岸田 陽介, 片瀬 貴義, 平松 秀典, 上田 茂典, 雲見 日出也, 細野 秀雄, 神谷 利夫. [講演奨励賞受賞記念講演] 全反射硬X線光電子分光法によるアモルファス酸化物半導体の価電子帯直上欠陥の深さ方向分布, 第65回応用物理学会春季学術講演会, Mar. 2018.
• 溝口拓, 村場善行, フレッドリクソンダニエル, 松石聡, 神谷利夫, 細野秀雄. 多中心結合からなる伝導帯を持つ半導体Mg2Si, 日本セラミックス協会第30回秋季シンポジウム, Sept. 2017.
• 佐藤 光, 片瀬貴義, 平松秀典, 神谷利夫, 細野秀雄. 4種類の励起レーザー波長を使ったパルスレーザー堆積法による鉄系超伝導体Co添加BaFe2As2薄膜のヘテロエピタキシャル成長, 新学術領域研究「ナノ構造情報のフロンティア開拓―材料科学の新展開」第2回若手の会, July 2014.
• 松田 匠悟, 佐藤 光, 片瀬 貴義, 平松 秀典, 神谷 利夫, 細野 秀雄. KFe2As2薄膜の作製と超伝導特性, 新学術領域研究 平成25年度若手の会, Sept. 2013.
• 佐藤 光, 片瀬 貴義, 平松 秀典, 神谷 利夫, 細野 秀雄. 122型鉄系超伝導体薄膜の圧力効果, 新学術領域研究 平成25年度若手の会, Sept. 2013.
• 平松秀典, 片瀬貴義, 石丸喜康, 塚本 晃, 神谷利夫, 田辺圭一, 細野秀雄. 鉄系超伝導体BaFe2As2の薄膜成長とデバイス作製, 2012年春季 第59回 応用物理学関係連合講演会, Feb. 2012.
• 平松 秀典, 片瀬 貴義, 石丸 喜康, 塚本 晃, 神谷 利夫, 田辺 圭一, 細野 秀雄. 鉄系超伝導体薄膜の臨界電流密度とジョセフソン接合, 第4回超電導応用研究会・第3回材料研究会合同シンポジウム, Feb. 2012.
• 千葉 哲也, 神谷 利夫, 細野 秀雄, 林 克郎. 固体酸化物を放出源とした真空中への原子状酸素の発生とその照射効果, 応用物理学会2009年秋季 学術講演会, Sept. 2009.

その他の論文・著書など

• 片瀬貴義, 神谷利夫. 環境に優しい熱電材料を目指して―水素を用いた酸化物の熱電変換効率改善, セラミックス 特集「熱エネルギー利用に向けた熱電変換材料・デバイス革新」, Vol. 59, No. 6, June 2024.
• 片瀬貴義, 神谷利夫. 毒性元素を含まない熱電変換材料の高性能化－新アプローチによる挑戦－, クリーンエネルギー, Vol. 33, No. 5, May 2024.
• 片瀬貴義, ホシンイ, 神谷利夫. 熱電変換効率改善の新アプローチ : Ｈ－置換により低い格子熱伝導率と高い電気伝導度を同時に実現, セラミックス, Vol. 58, No. 7, pp. 498, Oct. 2023.
• 片瀬貴義, 神谷利夫. 電気伝導度と熱起電力のトレードオフ解消による酸化物熱電変換材料の高性能化, 機能材料 シーエムシー出版, Vol. 43, No. 4, pp. 17-24, Aug. 2023.
• Keisuke Ide, Kenji Nomura, Hideo Hosono, Toshio Kamiya. Electronic Defects in Amorphous Oxide Semiconductors, A Review; Phys. Status Solidi A, 216, 1800372, 2018.
• 川原田洋, 神谷利夫, 細野秀雄. エレクトロニクス材料開発分野の活動状況, まてりあ, Vol. 54, pp. 232-235, 2015.
• 神谷利夫. 酸化物薄膜トランジスタ, 応用物理, Vol. 82, No. 8, pp. 698-702, July 2014.
• 神谷利夫, 雲見日出也, 細野秀雄. 省電力技術としてのアモルファス酸化物半導体, J. Soc. Inorg. Mater. Jpn., Vol. 21, pp. 389-394, 2014.
• 神谷利夫, 細野秀雄. 透明酸化物半導体がもたらすディスプレイの変革と今後の展望, 研究開発リーダー, pp. 19-24, May 2013.
• 神谷利夫, 雲見日出也, 細野秀雄. 酸化物半導体TFTの研究動向と課題; 月間ディスプレイ10月号, 1-8,, 月間ディスプレイ, Vol. 10月号, pp. 1-8, 2013.
• 神谷利夫, 雲見日出也, 細野秀雄:. アモルファス酸化物半導体薄膜; 表面技術 (2013年7月号), Vol. 64, pp. 392-395, 2013.
• Fuji FUNABIKI, Toshio KAMIYA, Hideo HOSONO. Doping effects in amorphous oxides, Journal of the Ceramic Society of Japan, Vol. 120, pp. 447-457, 2012.
• Hideo Hosono, Katsuro Hayashi, Toshio Kamiya, Toshiyuki Atou, Tomofumi Susaki. New functionalities in abundant element oxides: ubiquitous element strategy, Science and Technology of Advanced Materials, Vol. 12, p. 034303, June 2011.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Present status of amorphous InGaZnO thin-film transistors, Sci. Technol. Adv. Mater., vol. 11, pp. 044305-1 - 23, 2010.
• 神谷利夫, 細野秀雄. 酸化物半導体新材料の設計とアモルファス酸化物TFT開発の現状, 鉱山, pp. 20-30, 2010.
• Toshio Kamiya, Hideo Hosono. Material characteristics and applications of transparent amorphous oxide semiconductors, NPG Asia Mater., vol. 2, pp. 1522, 2010.
• Hidenori Hiramatsu, Yoichi Kamihara, Hiroshi Yanagi, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Layered mixed-anion compounds: Epitaxial growth, active function exploration, and device application, J. Euro. Ceram. Soc., vol. 29, pp. 245-253, 2009.
• 神谷利夫, 野村研二, 細野秀雄. アモルファス酸化物半導体の物性とデバイス開発の現状, 固体物理, vol. 44, pp. 621-633, 2009.
• 神谷利夫. 酸化物が電気を流す！, 化学と教育, 56, 12, 598, Dec. 2008.
• 神谷利夫. バンド構造を用いた材料開発（実践編）, 第14回結晶工学スクールテキスト, Aug. 2008.
• 野村研二, 神谷利夫, 太田裕道, 平野正浩, 細野秀雄. 酸化物半導体の薄膜トランジスタへの応用, 機能材料, Vol. 28, 3月号, pp. 42－53, 2008.
• 平松秀典, 神谷利夫, 平野正浩, 細野秀雄. ワイドギャップp型半導体LaCuOSeの高濃度正孔ドーピングと発光デバイス応用, 機能材料, Vol. 28, 3月号, pp. 34－41, 2008.
• 宮川仁, 金起範, 神谷利夫, 平野正浩, 細野秀雄. ﾅﾉ構造を利用したｾﾒﾝﾄ鉱物C12A7の金属化： 高透光性導電体薄膜の作製と停止後と関数を利用した電子注入電極への応用, 表面科学, Vol. 29, pp. 2-9, 2008.
• 柳博, 神谷利夫. n型透明導電性酸化物の特徴と進展, セラミックス, Vol. 42, pp. 37, 2007.
• Kenji Nomura, Akihiro Takagi, Toshio Kamiya, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono. Amorphous Oxide Semiconductors Towards High-Performance Flexible Thin-Film Transistors, Jpn. J. Appl. Phys., Vol. 45, pp. 4303-4308, 2006.
• 細野秀雄, 神谷利夫, 野村研二. アモルファス酸化物半導体を能動層とする透明フレキシブルトランジスタ, 応用物理, Vol. 74, pp. 910-916, 2005.
• 細野秀雄, 神谷利夫, 野村研二. ZnO基半導体を使った透明トランジスタ, 応用物理学会応用電子物性分科会誌, Vol. 11, pp. 16, 2005.
• 野村研二, 神谷利夫, 細野秀雄. 高性能フレキシブルTFT用材料としてのアモルファス酸化物半導体の材料探索とTFT特性, 第32回アモルファスセミナー テキスト, pp. 17, 2005.
• 野村研二, 神谷利夫, 細野秀雄. 高性能フレキシブルTFT実現に向けたアモルファス酸化物半導体の材料探索とフレキシブルTFT特性, 成形加工（プラスチック成形加工学会誌）, Vol. 17, pp. 588-592, 2005.
• 細野秀雄, 神谷利夫, 野村研二. ZnO基半導体を使った透明トランジスタ, 応用物理学会応用電子物性分科会誌, Vol. 11, pp. 16, 2005.
• 神谷利夫. 透明酸化物半導体：透明導電性酸化物から拓けた新しいフロンティア, 機能材料, pp. 10, 2005.
• 神谷利夫, 野村研二, 細野秀雄. アモルファス透明酸化物半導体を用いた高性能フレキシブル薄膜トランジスタの室温形成, マテリアルステージ, pp. 85, 2005.
• Toshio Kamiya, Hideo Hosono. Creation of New Functions in Transparent Oxides Utilizing Nanostructures Embedded in Crystal and Artificially Encoded by Laser Pulses, Semiconductor Science and Technology, Vol. 20, pp. S92, 2005.
• Toshio Kamiya, Hideo Hosono. Built-in Quantum Dots in Nano-Porous Crystal 12CaO·7Al2O3: Simplified Views for Electronic Structure and Carrier Transport, Jpn. J. Appl. Phys., Vol. 44, pp. 774, 2005.
• 神谷利夫, 野村研二, 細野秀雄. 透明酸化物半導体を使った高性能な薄膜トランジスタ, 電子ペーパー実用化最前線, pp. 267-280, 2005.
• 野村研二, 太田裕道, 神谷利夫, 平野正浩, 細野秀雄. 透明酸化物半導体を用いた透明電界効果トランジスタ, マテリアルインテグレーション, Vol. 18, pp. 3, 2005.
• 神谷利夫, 野村研二, 細野秀雄. 高移動度(>10cm²(Vs)^-1)を有するアモルファス酸化物半導体と薄膜トランジスタの室温形成, 第31回アモルファス物質の物性と応用セミナ―テキスト, pp. 1, 2004.
• 細野秀雄, 神谷利夫. 一枚の写真:セメントからつくる電界電子放射発光デバイス, O plus E, Vol. 26, pp. 367, 2004.
• 神谷利夫, 戸田喜丈, 細野秀雄. 自然ナノ構造を利用した新機能開拓―安定なエレクトライドの合成と冷電子源としての応用―, ファインケミカル, Vol. 33, pp. 22, 2004.
• 河村賢一, 平野正浩, 神谷利夫, 細野秀雄. フェムト秒レーザーのシングルパルス干渉による透明物質のナノ加工, 光アライアンス, Vol. 15, pp. 41, 2004.

特許など

• 片瀬貴義, 神谷利夫, 細野秀雄. アルカリ土類金属酸化物の半導体膜、半導体デバイス、及び半導体膜の作製方法. 特許. 公開. 国立大学法人東京工業大学. 2022/01/21. 特願2022-008130. 2023/08/02. 特開2023-107040. 2023.
• 片瀬貴義, 神谷利夫, 細野秀雄. カルコゲナイド薄膜、及び熱電変換素子. 特許. 公開. 国立大学法人東京工業大学. 2021/08/31. 特願2021-141736. 2023/03/13. 特開2023-035115. 2023.
• 片瀬貴義, 山本隆文, 神谷利夫, 細野秀雄. 水素置換酸化物バルク焼結体の製造方法、水素置換酸化物バルク焼結体、及び熱電変換素子. 特許. 公開. 国立大学法人東京工業大学. 2021/01/26. 特願2021-010569. 2022/08/05. 特開2022-114315. 2022.
• 片瀬貴義, 神谷利夫, 西村優作, 中村　伸宏　. 熱伝導率可変材料、およびそのような材料を含む膜. 特許. 公開. 国立大学法人東京工業大学, AGC株式会社. 2020/06/25. 特願2020-109946. 2022/01/13. 特開2022-007173. 2022.
• 細野秀雄, 神谷利夫, 雲見日出也, 金正煥, 中村　伸宏, 渡邉　暁, 宮川　直通. 酸化物半導体化合物の層、酸化物半導体化合物の層を備える半導体素子、および積層体. 特許. 登録. 国立大学法人東京工業大学, AGC株式会社. 2017/02/23. 特願2018-503092. 2019/01/10. 再表2017/150351. 特許第7130209号. 2022/08/26 2022.
• 細野秀雄, 野村研二, 神谷利夫. アモルファス酸化物半導体を活性層とした薄膜トランジスタ構造とその製造方法. 特許. 登録. 国立大学法人東京工業大学. 2012/07/03. 特願2012-149286. 2014/01/20. 特開2014-011425. 特許第5946130号. 2016/06/10 2016.
• 細野秀雄, 神谷利夫, 野村研二, 中川　克己, 佐野　政史. 非晶質酸化物、及び電界効果型トランジスタ. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2012/07/02. 特願2012-148444. 2012/12/13. 特開2012-248853. 特許第5589030号. 2014/08/01 2014.
• 細野秀雄, 神谷利夫, 野村研二, 安部　勝美. 非晶質酸化物を利用した半導体デバイス. 特許. 公開. 国立大学法人東京工業大学. 2012/06/15. 特願2012-135638. 2012/11/22. 特開2012-231153. 2012.
• 細野秀雄, 神谷利夫, 野村　研二, 斉藤　恵志. センサ及び非平面撮像装置. 特許. 公開. 国立大学法人東京工業大学, キヤノン株式会社. 2012/03/22. 特願2012-065329. 2012/07/26. 特開2012-142600. 2012.
• 細野秀雄, 野村研二, 神谷利夫, 藪田　久人, 佐野　政史, 岩崎　達哉. 電界効果型トランジスタの製造方法. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2012/03/15. 特願2012-058163. 2012/06/28. 特開2012-124532. 特許第5401571号. 2013/11/01 2013.
• 細野秀雄, 神谷利夫, 野村研二, 雲見　日出也. 画像表示装置. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2012/03/09. 特願2012-053401. 2012/08/09. 特開2012-151485. 特許第5401570号. 2013/11/01 2013.
• 細野秀雄, 野村　研二, 神谷利夫, 藪田　久人, 佐野　政史, 岩崎　達哉. 酸化物膜を用いた薄膜トランジスタの製造方法. 特許. 公開. 国立大学法人東京工業大学, キヤノン株式会社. 2012/03/15. 特願2012-058163. 2012/06/28. 特開2012-124532. 2012.
• 細野秀雄, 野村研二, 神谷利夫, 藪田　久人, 佐野　政史, 岩崎　達哉. 電界効果型トランジスタの製造方法 . 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2012/03/15. 特願2012-058087. 2012/08/23. 特開2012-160740. 特許第5451801号. 2014/01/10 2014.
• 細野秀雄, 野村研二, 神谷利夫, 藪田　久人, 佐野　政史, 岩崎　達哉. 電界効果型トランジスタの製造方法 . 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2012/03/15. 特願2012-058252. 2012/08/30. 特開2012-164986. 特許第5401572号. 2013/11/01 2013.
• 細野秀雄, 野村研二, 神谷利夫, 藪田　久人, 佐野　政史, 岩崎　達哉. 電界効果型トランジスタの製造方法 . 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2012/03/15. 特願2012-058253. 2012/08/30. 特開2012-164987. 特許第5401573号. 2013/11/01 2013.
• 神谷利夫, 細野秀雄, 木村　睦. 薄膜トランジスタ、及びそれを用いた最大印加電圧検出センサ及び照射光履歴センサ. 特許. 公開. 国立大学法人東京工業大学, 学校法人龍谷大学. 2011/09/13. 特願2011-200040. 2013/04/04. 特開2013-062384. 2013.
• 細野秀雄, 神谷利夫, 野村　研二, 佐野　政史, 中川　克己. 非晶質酸化物、及び電界効果型トランジスタ. 特許. 公開. 国立大学法人東京工業大学, キヤノン株式会社. 2011/07/15. 特願2011-156724. 2011/12/22. 特開2011-256108. 2011.
• 細野秀雄, 神谷利夫, 野村研二, 佐野　政史, 中川　克己. 非晶質酸化物、及び電界効果型トランジスタ. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2011/07/15. 特願2011-156723. 2011/12/08. 特開2011-249823. 特許第5337849号. 2013/08/09 2013.
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• 神谷利夫, 木村　睦, 中西　孝. 人工網膜. 特許. 公開. 国立大学法人東京工業大学, 学校法人龍谷大学. 2008/05/15. 特願2008-128621. 2009/11/26. 特開2009-273712. 2009.
• 細野秀雄, 神谷利夫, 野村研二, 安部　勝美. 非晶質酸化物を利用した半導体デバイス. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2005/11/09. 特願2005-325370. 2006/06/22. 特開2006-165532. 特許第5053537号. 2012/08/03 2012.
• 細野秀雄, 神谷利夫, 野村研二, 田　透, 岩崎　達哉. 発光装置及び表示装置. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2005/11/09. 特願2005-325367. 2006/07/13. 特開2006-186319. 特許第5118811号. 2012/10/26 2012.
• 細野秀雄, 神谷利夫, 野村　研二, 長田　芳幸. 電界効果型トランジスタ. 特許. 公開. 国立大学法人東京工業大学, キヤノン株式会社. 2005/11/09. 特願2005-325364. 2006/06/22. 特開2006-165527. 2006.
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• 細野秀雄, 神谷利夫, 野村　研二, 安部　勝美. 非晶質酸化物を利用した半導体デバイス. 特許. 公開. 国立大学法人東京工業大学, キヤノン株式会社. 2005/11/09. 特願2005-325370. 2006/06/22. 特開2006-165532. 2006.
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• 細野秀雄, 神谷利夫, 野村　研二, 雲見　日出也. 画像表示装置. 特許. 公開. 国立大学法人東京工業大学, キヤノン株式会社. 2005/11/09. 特願2005-325365. 2006/06/22. 特開2006-165528. 2006.
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学位論文

• 第一原理および分子シミュレーション法による誘電性無機結晶の研究,  本文,  博士(工学),  東京工業大学,  1996/12/31,    (Organization name: Tokyo Institute of Technology)

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