国際会議発表 (査読なし・不明)

• 宋 禛漢, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, 杉井信之, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 87-91, Oct. 2013.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Si nanowire FET with asymmetric channel, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. An analytical model of a tunnel FET with Schottky junction, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• K.Tuokedaerhan, 金田翼, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of annealing ambient for La2O3/Si capacitor, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 来山大祐, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. [Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 中島一裕, Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 中島一裕, Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Ryuji Hosoi, Yuya Suzuki, ダリューシュザデ, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Kazuki Matsumoto, 小山将央, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si fin and nanowire structures, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characterization of atomically flat NiSi2 Schottky diode, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of metal electrode material on resistive switching properties of Ce oxides, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 田中祐樹, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Kana Tsuneishi, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical properties of Tm2O3 gate dielectric and its scaling issues, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Michihiro Hosoda, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Size dependent phonon limited electron mobility of Si nanowire, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.

国内会議発表 (査読なし・不明)

• パールハット アヘメト, 筒井一生, 角嶋邦之, 杉井 信之, 知京 豊裕, 服部健雄, 長田 貴弘, 岩井洋. 高濃度n+-Si 及びp+-Si基板上のNiシリサイドの熱安定性の違い, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, No. 0, pp. 896, Mar. 2008.
• 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Sub-1.0nm EOTにおけるW／La2O3ゲートスタックｎMOSFETの電子移動度解析, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, No. 2, pp. 849, Mar. 2008.

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