@article{CTT100647720,
  author = {H Wong and B.L. Yang and S. Dong and HIROSHI IWAI and Kuniyuki KAKUSHIMA and Ahmet Parhat},
  title = {Current conduction and stability of CeO2/La2O3 stacked gate dielectric},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2012,
}

@article{CTT100647718,
  author = {Miyuki Kouda and 鈴木 拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and 安田哲二},
  title = {Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100647654,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs},
  journal = {Solid-State Electronics},
  year = 2012,
}

@article{CTT100647653,
  author = {鈴木 拓也 and 久保田透 and Ahmet Parhat and HIROSHI IWAI},
  title = {La2O3 gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La2O3 stacks for improved metal-oxide-semiconductor characteristics},
  journal = {Journal of Vacuum Science & Technology A},
  year = 2012,
}

@article{CTT100647652,
  author = {マイマイティ マイマイティレャアティ and 久保田透 and 関拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡好則 and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647651,
  author = {unknown unknown and W. Yasenjiang and Kuniyuki KAKUSHIMA and Ahmet Parhat and M. Geni and Kenji Natori and HIROSHI IWAI},
  title = {Influence of strained drain on performance of ballistic channel devices},
  journal = {Semiconductor Science and Technology},
  year = 2012,
}

@article{CTT100647591,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and 片岡好則 and 西山彰 and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Valance number transition and silicate formation of cerrium oxide on Si(100)},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647649,
  author = {C. Dou and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647590,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡 好則 and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs},
  journal = {Semiconductor Science and Technology},
  year = 2012,
}

@article{CTT100647588,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2},
  journal = {IEEE ELECTRON DEVICE LETTERS},
  year = 2012,
}

@article{CTT100647574,
  author = {Takamasa Kawanago and 鈴木 拓也 and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process},
  journal = {Solid-State Electronics},
  year = 2012,
}

@article{CTT100647577,
  author = {H Wong and B.L. Yang and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Effects of aluminum doping on lanthanum oxide gate dielectric films},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647576,
  author = {H Wong and B.L. Yang and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647573,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature},
  journal = {IEEE Transactions on Electron Devices},
  year = 2012,
}

@article{CTT100647571,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure},
  journal = {Solid-State Electronics},
  year = 2011,
}

@article{CTT100647426,
  author = {Miyuki Kouda and Takamasa Kawanago and Ahmet Parhat and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices},
  journal = {Journal of Vacuum Science and Technology B},
  year = 2011,
}

@article{CTT100647421,
  author = {ダリューシュザデ and Takashi Kanda and 山下晃司 and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647420,
  author = {unknown unknown and W. Yasenjiang and Kuniyuki KAKUSHIMA and Ahmet Parhat and M. Geni and KENJI NATORI and HIROSHI IWAI},
  title = {Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n+–i–n+  Diode},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647417,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5nm},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647416,
  author = {Miyuki Kouda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and ト部友二 and 安田哲二},
  title = {Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647415,
  author = {Miyuki Kouda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and ト部友二 and 安田哲二},
  title = {Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647422,
  author = {来山大祐 and 久保田透 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {[ 183]	D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layer”, Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100626838,
  author = {ダリューシュザデ and Kuniyuki KAKUSHIMA and Takashi Kanda and Y.C.Lin and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y.Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques},
  journal = {Microelectronic Engineering},
  year = 2011,
}

@article{CTT100626839,
  author = {来山大祐 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2 O3},
  journal = {Microelectronic Engineering},
  year = 2011,
}

@article{CTT100622438,
  author = {HIROSHI IWAI and KENJI NATORI and Kenji Shiraishi and 岩田 潤一 and 押山  淳 and Keisaku Yamada and Kenji Ohmori and Kuniyuki KAKUSHIMA and Ahmet Parhat},
  title = {Si nanowire FET and its modeling},
  journal = {Science China},
  year = 2011,
}

@article{CTT100621284,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors},
  journal = {Microelectronics Reliability},
  year = 2011,
}

@article{CTT100621281,
  author = {DARYOUSH ZADEH and Soshi Sato and Kuniyuki KAKUSHIMA and A. Srivastava and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and C.K. Sarkar and HIROSHI IWAI},
  title = {Effects of La2O3  incorporation in HfO2 gated nMOSFETs on low-frequency noise},
  journal = {Microelectronics Reliability},
  year = 2011,
}

@article{CTT100621278,
  author = {Soshi Sato and Kenji Ohmori and Kuniyuki KAKUSHIMA and Ahmet Parhat and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Experimental Characterization of Quasi-Fermi Pontential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry},
  journal = {Applied Physics Express},
  year = 2011,
}

@article{CTT100614619,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Selection of rare earth silicates for highly scaled gate dielectrics},
  journal = {Microelectronic Engineering},
  year = 2010,
}

@article{CTT100607472,
  author = {Kuniyuki KAKUSHIMA and Kiichi Tachi and M.Adachi and Koichi Okamoto and Soshi Sato and Jaeyeol Song and Takamasa Kawanago and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Interface and electrical properties of La-silicate for direct contact of high-k with silicon},
  journal = {Solid-State Electronics},
  year = 2010,
}

@article{CTT100607582,
  author = {M.K. Bera and Jaeyeol Song and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices},
  journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  year = 2010,
}

@article{CTT100613519,
  author = {M.K.Bera and Jaeyeol Song and Ahmet Parhat and Kuniyuki KAKUSHIMA and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices},
  journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  year = 2010,
}

@article{CTT100604483,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {SrO capping effect for La2O3/ Ce-Silicate gate dielectrics},
  journal = {Microelectronics Reliability 50},
  year = 2010,
}

@article{CTT100604479,
  author = {Yusuke Kobayashi and Kuniyuki KAKUSHIMA and Ahmet Parhat and V.Rampogal Rao and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness},
  journal = {Microelectronics Reliability 50},
  year = 2010,
}

@article{CTT100607464,
  author = {Kuniyuki KAKUSHIMA and M. Nakagawa and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Radio-frequency performance of a sub-100 nm metal-oxide field-effect transistor with high-k gate dielectric},
  journal = {Semiconductor Science and Technology},
  year = 2010,
}

@article{CTT100607466,
  author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and Kiichi Tachi and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric},
  journal = {Solid-State Electronics},
  year = 2010,
}

@article{CTT100588545,
  author = {Tomotsune Koyanagi and Kiichi Tachi and Koichi Okamoto and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation},
  journal = {Japanese Journal of Applied Physics},
  year = 2009,
}

@article{CTT100600446,
  author = {Kuniyuki KAKUSHIMA and Kiichi Tachi and Jaeyeol Song and Soshi Sato and Hiroshi Nohira and E. Ikenaga and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film},
  journal = {JOURNAL OF APPLIED PHYSICS},
  year = 2009,
}

@article{CTT100588886,
  author = {Reyes Joel Molina and A. Torres and W. Calleja and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Degradation and breakdown of W-La2O3 stack after annealing in N-2},
  journal = {JAPANESE JOURNAL OF APPLIED PHYSICS},
  year = 2008,
}

@article{CTT100588982,
  author = {Kuniyuki KAKUSHIMA and K. Okamoto and M. Adachi and Kiichi Tachi and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion},
  journal = {SOLID-STATE ELECTRONICS},
  year = 2008,
}

@article{CTT100586827,
  author = {Ahmet Parhat and Nakagawa Kentaro and Kuniyuki KAKUSHIMA and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack},
  journal = {Microelectronics Reliability 48},
  year = 2008,
}

@article{CTT100588755,
  author = {Ahmet Parhat and 中川健太郎 and Kuniyuki KAKUSHIMA and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack},
  journal = {Microelectronics Reliability},
  year = 2008,
}

@article{CTT100588767,
  author = {KAZUO TSUTSUI and T Matsuda and M Watanabe and Cheng-Guo Jin and 佐々木雄一朗 and Bunji Mizuno and E Ikenaga and Kuniyuki KAKUSHIMA and Ahmet Parhat and T Maruizumi and Hiroshi Nohira and takeo hattori and HIROSHI IWAI},
  title = {Activated Boron and its Concentration Profiles in Heavily Doped Si Studied by Soft X-ray Photoelectron Spectroscopy and Hall Measurements},
  journal = {Journal of Applied Physics},
  year = 2008,
}

@article{CTT100588871,
  author = {KAZUO TSUTSUI and T. Shiozawa and K. Nagahiro and Y. Ohishi and Kuniyuki KAKUSHIMA and Ahmet Parhat and N. Urushihara and M. Suzuki and HIROSHI IWAI},
  title = {Improvement of Thermal Stability of Ni Silicide on N+-Si by Direct Deposition of Group III Element (Al, B) Thin Film at Ni/Si Interface},
  journal = {Microelectronic Engineering},
  year = 2008,
}

@article{CTT100588880,
  author = {KAZUO TSUTSUI and Ruifei Xiang and K. Nagahiro and T. Shiozawa and Ahmet Parhat and Y. Okuno and M. Matsumoto and M. Kubota and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2},
  journal = {Microelectronic Engineering},
  year = 2008,
}

@article{CTT100588896,
  author = {N. Urushihara and S. Iida and N. Sanada and M. Suzuki and D.F. Paul and S. Bryan and Y. Nakajima and T. Hanajiri and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Three dimensional image construction and spectrum extraction from two dimensional elemental mapping in Auger electron spectroscopy},
  journal = {JOURNAL OF VACUUM SCIENCE & TECHNOLOGY},
  year = 2008,
}

@article{CTT100586854,
  author = {Soshi Sato and Kiichi Tachi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Thermal-stability improvement of LaON thin film formed using nitrogen radicals},
  journal = {Microelectronic Engineering},
  year = 2007,
}

@article{CTT100586852,
  author = {Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Improvement of interfacial properties with interfacial layer in La2O3  / Ge structure},
  journal = {Microelectronic Engineering},
  year = 2007,
}

@article{CTT100586853,
  author = {Takamasa Kawanago and Kiichi Tachi and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application},
  journal = {Microelectronic Engineering},
  year = 2007,
}

@inproceedings{CTT100654576,
  author = {K.Tuokedaerhan and 金田翼 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of annealing ambient for La2O3/Si capacitor},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658130,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658131,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658132,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658129,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654161,
  author = {マイマイティ マイマイティレャアティ and 関拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100649139,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Metal Inserted Poly-Si wirh High Temperature Annealing for Achieving EOT of 0.62nm in La-silicate MOSFET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100622706,
  author = {来山大祐 and 久保田 透 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Precise Control of Silicate Reaction with La2O3 Gate Dielectrics towards Equivalent Oxide Thickness of 0.5 nm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654662,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics},
  booktitle = {ECS Transactions},
  year = 2011,
}

@inproceedings{CTT100631047,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {La2O3 のALD成長のための原料選択：シクロペンタジエニル錯体とアミディネート錯体の比較},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100631046,
  author = {佐藤創志 and 角嶋邦之 and パールハットアヘメト and 大毛利健治 and 名取研二 and 山田啓作 and 岩井洋},
  title = {Effects of corners of channel cross-section on electrical performance of silicon nanowire field-effect transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628848,
  author = {細田倫央 and 李映勲 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {矩形断面SiナノワイヤMOSFETにおけるフォノン散乱に制限された移動度のサイズ依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628847,
  author = {叶真一 and MokhammadSholihul Hadi and 竇春萌 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希土類酸化物(CeOX)を用いたMIM構造の抵抗スイッチング特性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628833,
  author = {LiWei and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {コンダクタンス法による立体チャネルを有するMOSキャパシタの界面準位密度の評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628830,
  author = {吉原 亮 and 角嶋邦之 and パールハットアヘメト and 中塚理 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Ni/Si積層から形成されるNiシリサイドのショットキーダイオードの電流特性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628819,
  author = {田村雄太 and 角嶋邦之 and 中塚 理 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {NiとSiの積層薄膜によって形成したシリサイドのシート抵抗に対する熱処理温度の影響},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628814,
  author = {金原潤 and 宮田陽平 and 秋田洸平 and 筒井一生 and 野平博司 and 室隆桂之 and 木下豊彦 and パールハットアヘメト and 角嶋邦之 and 服部健雄 and 岩井洋},
  title = {Si中に極浅ドープされたAsの軟X線光電子分光による化学結合状態の検出とその深さ方向分布},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628219,
  author = {宮田陽平 and 金原潤 and 難波覚 and 三角元力 and 筒井一生 and 野平博司 and 室隆桂之 and 木下豊彦 and 角嶋邦之 and パールハットアヘメト and 服部健雄 and 岩井洋},
  title = {軟X線光電子分光法を用いたFin構造中の不純物化学結合状態分析},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628215,
  author = {松本一輝 and 小山将央 and 呉研 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628214,
  author = {鈴木佑哉 and 細井隆司 and ダリューシュザデ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628208,
  author = {常石佳奈 and 来山大祐 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {W/Tm2O３/n-Si構造キャパシタの電気特性におけるTm2O３膜厚依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628207,
  author = {Kamale Tuokedaerhan and 金田翼 and マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {La2O3/n-Si 構造に対するPost Deposition Annealの電気特性への影響},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627782,
  author = {鈴木 拓也 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and 安田哲二},
  title = {ALDによるMgO添加La2O3ゲート絶縁膜の形成及び電気特性評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627781,
  author = {関 拓也 and 来山大祐 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {High-k/Si 直接接合構造における界面準位の定量評価について},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627777,
  author = {田中 祐樹 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {シリコン基板上に堆積したナノカーボン薄膜への高温短時間アニーリングの影響},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623994,
  author = {C. Dou and 向井 弘樹 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structure},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623983,
  author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High –k Gate Stacks},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623969,
  author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623967,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Structural Effects of Channel Cross-section on a Gate Capacitance of Silicon Nanowire Field-Effect Transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622712,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Metal Inserted Poly-Si Stacks with La2O3 Gate Dielectrics for Scaled EOT and VFB Control by Oxygen Incorporation},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622711,
  author = {Takashi Kanda and ダリューシュザデ and Y. C. Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y. Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622704,
  author = {マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and HIROSHI IWAI},
  title = {Remote-surface-roughness scattering-limited electron, mobility in ultrathin high-k gate stacked MOSFETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622703,
  author = {金田翼 and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effect of rare earth oxide capping for La-based gate oxides},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622686,
  author = {Takamasa Kawanago and 鈴木 拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {An effective process for oxygen defect suppression for La-based oxide gate dielectric},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622685,
  author = {中島一裕 and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Interface State Density Measurement of Three Dimensional Silicon Structures by Charge Pumping Method},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622684,
  author = {小山将央 and Naoto Shigemori and Hideaki Arai and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Lateral encroachment of Ni silicide into silicon nanowire},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622683,
  author = {Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {An effective suppression process for Ni silicide enchroachment into Si nanowire},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622611,
  author = {unknown unknown and Kuniyuki KAKUSHIMA and Ahmet Parhat and KENJI NATORI and HIROSHI IWAI},
  title = {Influence of Phonon Generation of Hot Electrons in Drain Region on Ballistic Transport},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622609,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Influence of the cross-sectional shape for Si nanowire FETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622598,
  author = {ダリューシュザデ and Takashi Kanda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622594,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of CVD and ALD processes},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622593,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Rare earth oxide capping effect on La2O3 gate dielectrics toward EOT of 0.5nm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100615527,
  author = {KAZUO TSUTSUI and Masaoki Tanaka and Norifumi Hoshino and Hiroshi Nohira and Kuniyuki KAKUSHIMA and Ahmet Parhat and 佐々木雄一朗 and Bunji Mizuno and T. Muro and T. Kinoshita and takeo hattori and HIROSHI IWAI},
  title = {Soft X-ray Photoelectron Spectroscopy Study of Activation and Deactivation of Impurities in Shallow Junctions},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100615539,
  author = {Kenji Ozawa and Miyuki Kouda and Y. Urabe and T. Yasuda and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {La2O3  insulators prepared by ALD using La(iPrCp)3 source: self-limiting growth conditions and electrical properties},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100615536,
  author = {Ahmet Parhat and 来山大祐 and 金田 翼 and 鈴木  拓也 and Tomotsune Koyanagi and Miyuki Kouda and M. Mamatrishat and Takamasa Kawanago and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Scaling of EOT Beyond 0.5nm},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100615530,
  author = {unknown unknown and Kuniyuki KAKUSHIMA and Ahmet Parhat and M. Geni and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {The Effect of Isotropic and Anisotropic Scattering in Drain Region of Ballistic Channel Diode},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613732,
  author = {Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613726,
  author = {Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Impact of Alkali-Earth-Elements Incorporation on Vfb R0ll-Off Characteristics of La2O3  Gated MOS Device},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613728,
  author = {M.Bera and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Nobuyuki Sugii and 西山彰 and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Yttrium-Titanium Oxide High-k Gate Dielectric on Ge},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613731,
  author = {M. Mamatrishat and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and A. Aierken and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and HIROSHI IWAI},
  title = {Effect of Remote-Surface –Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613733,
  author = {来山大祐 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {TiN Capping Effect on High Temperature Annealed RE-Oxide MOS Capacitors for Scaled EOT},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613735,
  author = {Y. Wu and Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and 西山彰 and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616068,
  author = {小山 将央 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {窒素導入によるSiナノワイヤ内へのNiシリサイド侵入抑制機構の検討},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616063,
  author = {マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {High-kゲートスタックMOSFETにおける電子移動度のリモート界面ラフネス散乱依存性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616058,
  author = {竇 春萌 and マイマイティ  マイマイティレャアティ and ダリューシュザデ and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希土類(Ce,Eu)酸化物MIM構造の抵抗スイッチング特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616055,
  author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {トンネルFET動作に向けたNiシリサイド/Si接触におけるトンネル電流の観測},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616062,
  author = {鈴木 拓也 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希釈酸素雰囲気熱処理を用いたLaシリケート/Si MOS構造のVFB/Vthシフトの低EOTへの適用},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616054,
  author = {細井隆司 and 神田高志 and ダリューシュザデ and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
  title = {絶縁膜材料を用いたIn0.53Ga0.47As MOSキャパシタの電気特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616050,
  author = {金田翼 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Tm-oxide/La2O3構造ゲート絶縁膜の界面特性評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616049,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {La(iPrCp)3 を原料としたLa2O3のALD: Self-limiting 成長条件の明確化},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616048,
  author = {幸田みゆき and 小澤健児 and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部 友二 and 安田 哲二},
  title = {CVD法によるCeOx絶縁膜の作製と特性評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616061,
  author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {高温短時間熱処理を用いた希土類MOSキャパシタへのTiNキャップ効果},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616060,
  author = {田中正興 and 金原潤 and 宮田陽平 and 角嶋邦之 and パールハットアヘメト and 室隆桂之 and 木下豊彦 and 野平博司 and 筒井一生 and 室田 淳一 and 服部健雄 and 岩井洋},
  title = {Siエピタキシャル層にドープされたボロンの軟X線光電子分光},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613532,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Optimized Oxygen Annealing Process for Vth Tuning of p-MOSFET with High-k/Metal Gate Stacks},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613533,
  author = {Soshi Sato and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Gate Semi-Around Si Nanowire FET Fabricated by Conventional CMOS Process with Very High Drivability},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616070,
  author = {中島 一裕 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {チャージポンピング法による立体Si構造の界面準位密度の評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613529,
  author = {角嶋邦之 and 小柳友常 and 来山大祐 and 幸田みゆき and 宋在烈 and 佐藤創志 and 川那子高暢 and M. マイマイティ and 舘喜一 and M.K. Bera and パールハットアヘメト and 野平博司 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 山田啓作 and 岩井洋},
  title = {LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御},
  booktitle = {，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）},
  year = 2010,
}

@inproceedings{CTT100607843,
  author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and 来山大祐 and Miyuki Kouda and Jaeyeol Song and Takamasa Kawanago and M. Mamatrishat and Kiichi Tachi and M. K. Bera and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and Keisaku Yamada and HIROSHI IWAI},
  title = {Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100608700,
  author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {EOT=0.5nmに向けた希土類MOSデバイスの高温短時間熱処理の検討},
  booktitle = {電子情報通信学会技術研究報告 pp.43-48},
  year = 2010,
}

@inproceedings{CTT100608701,
  author = {茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {SiナノワイヤへのNiシリサイド形成と過剰な侵入とその抑制に関する検討},
  booktitle = {電子情報通信学会技術研究報告 pp.17-22},
  year = 2010,
}

@inproceedings{CTT100608715,
  author = {佐藤創志 and 角嶋邦之 and パールハットアヘメト and 大毛利健二 and 名取研二 and 岩井洋 and 山田啓作},
  title = {キャリア移動度評価によるシリコンナノワイヤトランジスタの電気特性解析},
  booktitle = {電子情報通信学会技術研究報告 pp.11-16},
  year = 2010,
}

@inproceedings{CTT100605146,
  author = {Ahmet Parhat and Wataru Hosoda and unknown unknown and Yoshihisa Ohishi and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Er Inserted Ni Silicide Metal Source/Drain for Schottky MOSFETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100605137,
  author = {KAZUO TSUTSUI and Norifumi Hoshino and Yasumasa Nakagawa and Masaoki Tanaka and Hiroshi Nohira and Kuniyuki KAKUSHIMA and Ahmet Parhat and 佐々木雄一朗 and Bunji Mizuno and takeo hattori and HIROSHI IWAI},
  title = {Depth Profiling of Chemical Bonding States of Impurity Atoms and Their Correlation with Electrical Activity in Si Shallow Junctions},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100605147,
  author = {Ahmet Parhat and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Towards the Ultimate Scaling of MOSFET Gate Dielectrics - Direct Contact of High-k and Silicon},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100604217,
  author = {Ahmet Parhat and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Towards the Ultimate Scaling of MOSFET Gate Dielectrics - Direct Contact of High-k and Silicon-},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603770,
  author = {佐藤創志 and 新井英朗 and 角嶋邦之 and パールハットアヘメト and 大毛利 健治 and 名取研二 and 岩井洋 and 山田啓作},
  title = {Siナノワイヤトランジスタの電気特性の断面形状依存症},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603767,
  author = {田中正興 and 星野憲文 and 筒井一生 and 野平博司 and 室隆桂之 and 加藤有香子 and 木下豊彦 and パールハットアヘメト and 角嶋邦之 and 服部健雄 and 岩井洋},
  title = {光電子分光により検出したSi中のAsおよびPの化学結合状態の評価},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603768,
  author = {茂森直登 and 新井英朗 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸化膜中のSiナノワイヤへのNi拡散の制御},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603766,
  author = {川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸素添加がWゲートMOSデバイスの電気特性に与える影響},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603758,
  author = {ダリューシュ ザデ and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {界面にLa2O3 絶縁膜層を挿入したHf系high-kゲートMOSFETの評価},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603756,
  author = {来山 大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {来山大祐，小柳友常，角嶋邦之，パールハット アヘメト，筒井一生，西山彰，杉井信之，名取研二，服部健雄，岩井洋“EOT=0.5nm に向けたTaSi2/La2O3/CeOxゲートスタック構造の検討},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603745,
  author = {AbudukelimuAbudureheman and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and HIROSHI IWAI and takeo hattori and KENJI NATORI},
  title = {Performance of Silicon Ballistic Nanowire MOSFET with Diverse Orientations and Diameters},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603744,
  author = {Wataru Hosoda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603743,
  author = {Katuya Matano and Kiyohisa Funamizu and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characteristics of Rare Earth (La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603759,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {La2O3 MOSFETへのCeOxキャップによる電気特性の改善},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603760,
  author = {幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希土類酸化物をキャップすることによるMOSFETの電気特性の改善},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603761,
  author = {小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {La2O3 MOSデバイスへのアルカリ土類元素キャップによる電気特性の変化},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603765,
  author = {神田高志 and 船水清永 and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
  title = {HfO2/ La2O3/ In0.53 Ga0.47As構造の界面特性の変化},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100630960,
  author = {小山将央 and 茂森直登 and 新井英朗 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Lateral encroachment of Ni silicide into Si nanowire},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630958,
  author = {茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630957,
  author = {AbudukelimuAbudureheman and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {The Effect of Scattering in Drain Region of Ballistic Channel Diode},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630955,
  author = {佐藤創志 and 角嶋邦之 and パールハットアヘメト and 大毛利健治 and 山田啓作 and 名取研二 and 岩井洋},
  title = {Influence of the cross-sectional shape for Si nanowire FETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630961,
  author = {中島一裕 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Interface state density of 3-D structured Si using charge pumping method},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630991,
  author = {小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Flatband Voltage Shift of La-based Gate Oxides with Alkali-earth-elements Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630992,
  author = {金田翼 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Effect of Rare Earth Oxide Capping for La-based Gate Oxides},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630993,
  author = {マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {Remote Coulomb and roughness scatterings in gate oxide scaling},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631006,
  author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631005,
  author = {竇春萌 and 向井弘樹 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Feasibility study of Ce oxide for resistive RAM application},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631002,
  author = {ダリューシュザデ and 神田高志 and 細井隆司 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631000,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {Self-limited growth of La oxides with ALD},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630998,
  author = {幸田みゆき and 小澤健児 and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {Electrical characterization of CVD deposited Ce oxides},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630997,
  author = {久保田透 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Spectroscopic analysis of interface state density in high-k/Si structure},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630995,
  author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Process Optimization of Rare-Earth Oxides Gated MOS Devices for Future EOT Scaling},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630990,
  author = {川那子高暢 and 鈴木 拓也 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {An Effective Process for Oxygen Defects Suppression for La-based Oxide Gate Dielectric},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597900,
  author = {Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Effect of Ultrathin Si Passivation Layer for La2O3/Ge MOS structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598270,
  author = {Wataru Hosoda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {A Study of Schottky Barrier Height Modulation of NiSi by Interlayer Insertion and Its Application to SOI SB-MOSFETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597929,
  author = {Kiyohisa Funamizu and Takashi Kanda and Y.C.Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y.Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597926,
  author = {Hideaki Arai and Hideyuki Kamimura and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and 西山彰 and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Annealing Reaction for Ni Silicidation of Si Nanowire},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597925,
  author = {Hiroto Nakayama and Kuniyuki KAKUSHIMA and Ahmet Parhat and E.Ikenaga and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597922,
  author = {Miyuki Kouda and Naoto Umezawa and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and Kenji Shiraishi and 知京豊裕 and Keisaku Yamada and HIROSHI IWAI},
  title = {Charged defects reduction in gate insulator with multivalent materials},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597921,
  author = {A.Abudukelimu and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Current-Voltage Characteristics of Ballistic Nanowire MOSFET by Numerical Analysis},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597917,
  author = {M.Mamatrishat and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Study on Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/ La2O3 Gate Stacks},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597913,
  author = {Soshi Sato and Hideaki Arai and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Evaluation of Channel Potential Profile of Si Nanowire Field Effect Transistor},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597907,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Experimental Investigation of VFB shift and Effective Mobility in La2O3 MOS Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597891,
  author = {M.K. Bera and Jaeyeol Song and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Rare-earth based mixed oxide as high-k gate dielectrics for Ge MOSFET},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597775,
  author = {Hiroto Nakayama and Kuniyuki KAKUSHIMA and Ahmet Parhat and E.Ikenaga and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597769,
  author = {Kiyohisa Funamizu and Y.C. Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and E.Y. Chang and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597766,
  author = {M.K.Bera and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Lanthanum-scandate Gate Dielectric Directly Deposited on Ge},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597764,
  author = {Tomotsune Koyanagi and Koichi Okamoto and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and AKIRA NISHIYAMA and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La2O3 Gated MOS Device},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597761,
  author = {Hideaki Arai and Hideyuki Kamimura and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Annealing Reaction for Ni Silicidation of Si Nanowire},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597758,
  author = {Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Overwhelming the o.5 nm EOT Level for CMOS Gate Dielectric},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598273,
  author = {Katuya Matano and Kuniyuki KAKUSHIMA and Ahmet Parhat and Nobuyuki Sugii and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
  title = {Threshold Voltage Control in p-MOSFET with High-k Gate dielectric},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598275,
  author = {Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Influence of Alkali Earth Elements Capping on Electrical Characteristics of La2O3 Gated MOS Device},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598280,
  author = {Yusuke Kobayashi and Kuniyuki KAKUSHIMA and Ahmet Parhat and V.Ramgopal Rao and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Short-channel effects on FinFETs induced by inappropriate fin widths},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597754,
  author = {Soshi Sato and Hideyuki Kamimura and Hideaki Arai and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and Keisaku Yamada and HIROSHI IWAI},
  title = {High-Performance Si Nanowire FET with a Semi Gate-Around Structure Suitable for Integration},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597756,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Kiichi Tachi and Miyuki Kouda and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597760,
  author = {M.Mamatrishat and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Analysis of Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/La2O3 Gate Stacks},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585316,
  author = {船水清永 and Yueh-Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and Edward Yi Chang and 服部健雄 and 岩井洋},
  title = {High-k ゲート絶縁膜を用いたInxGa1-xAs MOS構造の研究},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100586499,
  author = {Takamasa Kawanago and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Experimental Study for High Efffective Mobility with directly deposited HfO2/La2O3 MOSFET},
  booktitle = {INFOS2009},
  year = 2009,
}

@inproceedings{CTT100585083,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Naoto Umezawa and Ahmet Parhat and Kenji Shiraishi and Toyohiro Chikyow and Keisaku Yamada and HIROSHI IWAI},
  title = {Charged defects reduction in gate insulator with multivalent materials},
  booktitle = {2009 Symposium on VLSI Technology Digest of Technical Papers},
  year = 2009,
}

@inproceedings{CTT100586498,
  author = {Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Post metallization annealing study in La2O3/Ge MOS structure},
  booktitle = {INFOS2009},
  year = 2009,
}

@inproceedings{CTT100585433,
  author = {中山寛人 and 日野雅文 and 永田晃基 and 小瀬村大亮 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 小椋厚志 and 服部健雄 and 岩井洋},
  title = {As注入とSiN応力膜によるpoly-Siへの歪記憶の検討},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100586581,
  author = {小柳友常 and 岡本晃一 and 角嶋邦之 and パールハットアヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {La2O3MOSデバイスへのSrO導入による電気特性の変化},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100586495,
  author = {Hideyuki Kamimura and Hideaki Arai and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact},
  booktitle = {ISTC /CSTIC2009},
  year = 2009,
}

@inproceedings{CTT100586472,
  author = {Hiroki Fujisawa and A Srivastava and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and C.K. Sarkar and HIROSHI IWAI},
  title = {Electrical Characterization of W/HfO2 MOSFETs with La2O3 Incorporation},
  booktitle = {ISTC /CSTIC2009},
  year = 2009,
}

@inproceedings{CTT100585445,
  author = {小林勇介 and 角嶋邦之 and パールハットアヘメト and V.R. Rao and 筒井一生 and 岩井洋},
  title = {FinFETの構造ばらつきによるオン電流のばらつきの検討},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585442,
  author = {星野憲文 and 中川恭成 and 野平博司 and 室 隆桂之 and 加藤 有香子 and 甲斐隆行 and 金成国 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 木下 豊彦 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {光電子分光によるSi中Asの化学結合状態評価},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585430,
  author = {又野克哉 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Ge層挿入によるLa2O3-MOSキャパシタのVFB制御},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585427,
  author = {横田知之 and 酒井一憲 and パールハットアヘメト and 筒井一生 and 岩井洋},
  title = {反復剥離法による3次元Fin構造中ドーピングプロファイル測定の提案},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585426,
  author = {新井英朗 and 上村英之 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {SiナノワイヤへのNiシリサイド形成の評価},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585423,
  author = {佐藤創志 and 上村英之 and 新井英朗 and 角嶋邦之 and パールハットアヘメト and 大毛利健二 and 筒井一生 and 杉井信之 and 服部健雄 and 山田啓作 and 岩井洋},
  title = {四端子測定TEGを用いたSiナノワイヤトランジスタのチャネル内電位の測定},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585313,
  author = {幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {CeO2 /La2O3積層ゲート絶縁膜のリーク電流特性の膜厚依存性},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585312,
  author = {細田亘 and 野口浩平 and パールハットアヘメト and 角嶋邦之 and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用},
  booktitle = {第56回応用物理学会予稿集},
  year = 2009,
}

@inproceedings{CTT100585306,
  author = {宋在烈 and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {極薄Si界面層を挿入したLa2O3/Ge MIS構造における界面準位密度低減に関する検討},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585302,
  author = {岩井洋 and 名取研二 and 白石賢二 and 山田啓作 and 大毛利健二 and 筒井一生 and 角嶋邦之 and パールハットアヘメト},
  title = {シリコンナノワイヤFET研究の現状とロードマップ作成の考え方},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585291,
  author = {岩井洋 and 山田啓作 and 大毛利健二 and 筒井一生 and 角嶋邦之 and パールハットアヘメト and 佐藤創志 and 上村英之 and 新井英朗},
  title = {トップダウンSiナノワイヤFETの作製法とその電気的特性のサーベイ},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585128,
  author = {幸田みゆき and 梅澤直人 and 角嶋邦之 and パールハットアヘメト and 白石賢二 and 知京豊裕 and 山田啓作 and 岩井洋 and 服部健雄},
  title = {低電子揺動Ce酸化物を利用したhigh－k膜中の固定電荷の抑制},
  booktitle = {ゲートスタック研究会－材料･プロセス・評価の物理－（第14回研究会）},
  year = 2009,
}

@inproceedings{CTT100585107,
  author = {中川恭成 and 野平博司 and 酒井一憲 and 横田 知之 and 甲斐 隆行 and 金成国 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 服部健雄 and 筒井一生 and 岩井洋},
  title = {光電子分光によるSi中Asの活性化状態の深さ方向分布評価},
  booktitle = {応用物理学会},
  year = 2008,
}

@inproceedings{CTT100585094,
  author = {船水清永 and 幸田みゆき and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {CeOX/La2O3積層ゲート絶縁膜構造の膜特性評価},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576524,
  author = {川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {La2O3/Si直接接合構造における界面特性の評価},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100585126,
  author = {小林勇介 and 角嶋邦之 and パールハットアヘメト and ラオ ラムゴパル and 筒井一生 and 岩井洋},
  title = {FinFETの閾値変動における短チャネル効果による影響の切り分け},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100585122,
  author = {又野克哉 and 野口 浩平 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Hf層界面挿入によるNiシリサイドのショットキー障壁変調技術},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100585118,
  author = {細田亘 and 野口浩平 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100585117,
  author = {酒井一憲 and 中川恭成 and 横田知之 and 金成国 and 岡下勝己 and 佐々木雄一朗 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 服部健雄 and 筒井一生 and 岩井洋},
  title = {3次元Fin構造中不純物プロファイリングのための反復犠牲酸化エッチング},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100585114,
  author = {中山寛人 and 日野雅文 and 服部健雄 and 杉井信之 and 筒井一生 and パールハットアヘメト and 角嶋邦之 and 小椋厚志 and 永田 晃基 and 吉田 哲也 and 小瀬村大亮 and 岩井洋},
  title = {Ar注入とSiN応力膜によるパターン付Si基板への歪記憶技術の検討},
  booktitle = {応用物理学会},
  year = 2008,
}

@inproceedings{CTT100585100,
  author = {佐藤創志 and 上村英之 and 新井英朗 and 大毛利健二 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 服部健雄 and 杉井信之 and 山田啓作 and 岩井洋},
  title = {Si Finのアスペクト比最適化により作製した円形Siナノワイヤの形状に関する研究},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576517,
  author = {新井英朗 and 上村英之 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 服部健雄 and 杉井信之 and 岩井洋},
  title = {熱酸化によるSi ナノワイヤの作製とその電気特性},
  booktitle = {応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576519,
  author = {小柳友常 and 岡本晃一 and 角嶋邦之 and パールハットアヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {La203系MOSFETへのMg挿入による電気特性の変化},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576391,
  author = {上村英之 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 大毛利 健二 and 服部健雄 and 岩井洋},
  title = {熱酸化によるSiナノワイヤ形状の酸化条件依存性},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576388,
  author = {日野雅文 and 吉田哲也 and 小瀬村 大亮 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 小椋 厚志 and 服部健雄 and 岩井洋},
  title = {SiN応力膜によるSi基板への歪記憶の検討},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576403,
  author = {小林 勇介 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and V.R. Rao and 岩井洋},
  title = {FinFETにおけるショートチャンネル効果のフィン幅依存症},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576432,
  author = {酒井一憲 and 渡邉将光 and 中川恭成 and 金 成国 and 岡下 勝己 and 佐々木雄一朗 and パールハットアヘメト and 角嶋邦之 and 水野 文二 and 服部健雄 and 筒井一生 and 岩井洋},
  title = {極浅接合プロファイリングのための反復犠牲酸化エッチング技術},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576382,
  author = {幸田みゆき and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {CeO2/La2O3積層ゲート絶縁膜の電気特性評価},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576383,
  author = {野口浩平 and 大石善久 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Er層界面挿入によるNiシリサイドのショットキー障壁変調技術},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576425,
  author = {中野 美尚 and 村上 裕彦 and DARYOUSHHASSANZADEH and パールハットアヘメト and 角嶋邦之 and 岩井洋},
  title = {基板並行方向へのCNT成長制御},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100599990,
  author = {佐藤創志 and 舘喜一 and 宋在烈 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {ラジカル窒化によるLa<sub>2O</sub>3ゲート絶縁膜への窒素導入効果 : 堆積時窒化によるEOT増加抑制効果（ゲート絶縁膜、容量膜、機能幕及びメモリ技術）},
  booktitle = {電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス},
  year = 2007,
}

@inproceedings{CTT100533619,
  author = {小林勇介 and 筒井一生 and 角嶋邦之 and V. Hariharan and V.R. Rao and パールハットアヘメト and 岩井洋},
  title = {FinFETのSpacer領域形状変化のデバイス特性への影響},
  booktitle = {春季第54回応用物理学会学術講演会予稿集},
  year = 2007,
}

@inproceedings{CTT100830712,
  author = {J. Molina and K. Tachi and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and I. Hiroshi},
  title = {Charge Trapping Characteristics of W-La2O3-nSi Mis Capacitors After Post-Metallization Annealing PMA in N2},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830713,
  author = {Y. Shiino and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
  title = {La2O3 Gate Dielectric Thin Film with Sc2O3 Buffer Layer for High Temperature Annealing},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830716,
  author = {H. Nohira and T. Matsuda and K. Tachi and Y. Shiino and J. Song and Y. Kuroki and J. Ng and P. Ahmet and K. Kakushima and K. Tsutsui and E. Ikenaga and K. Kobayashi and H. Iwai and T. Hattori},
  title = {Effect of Deposition Temperature on Thermal Stability of Lanthanum Oxide/Si Interfacial Transition Layer},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830714,
  author = {H. Sauddin and Y. Sasaki and H. Ito and B. Mizuno and P. Ahmet and K. Kakushima and N. Sugii and K. Tsutsui and H. Iwai},
  title = {Leakage Current Characteristics of Ultra-Shallow Junctions formed by B2H6 Plasma Doping},
  booktitle = {},
  year = 2006,
}