@article{CTT100918374,
  author = {Gen Nakada and Yoshiharu Kihara and Akira Yasui and Kuniyuki KAKUSHIMA and Hiroshi Nohira},
  title = {Estimation of the band alignment of metal/AlScN interfaces by hard X-ray photoelectron spectroscopy},
  journal = {Japanese Journal of Applied Physics},
  year = 2024,
}

@article{CTT100918393,
  author = {Tomoya Tsutsumi and Kazuki Goshima and Yoshiharu Kirihara and Tatsuki Okazaki and Akira Yasui and Mitani Yuichiro and Kuniyuki KAKUSHIMA and Hiroshi Nohira},
  title = {Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES},
  journal = {},
  year = 2024,
}

@article{CTT100830094,
  author = {"J. Chen" and "T. Kawanago" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "D. Nohata" and "H. Nohira" and "K. Kakushima"},
  title = {La2O3 gate dielectrics for AlGaN/GaN HEMT},
  journal = {Microelectronics Reliability},
  year = 2016,
}

@article{CTT100658723,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Hiroshi Nohira and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode},
  journal = {Solid-State Electronics},
  year = 2013,
}

@article{CTT100647591,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and 片岡好則 and 西山彰 and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Valance number transition and silicate formation of cerrium oxide on Si(100)},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647425,
  author = {山下晃司 and 沼尻 侑也 and M. Watanabe and Kuniyuki KAKUSHIMA and HIROSHI IWAI and Hiroshi Nohira},
  title = {Study of High-k/Ino.53Ga.0.47As interface by Hard X-ray Photoemission Spectroscopy},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647421,
  author = {ダリューシュザデ and Takashi Kanda and 山下晃司 and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100604483,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {SrO capping effect for La2O3/ Ce-Silicate gate dielectrics},
  journal = {Microelectronics Reliability 50},
  year = 2010,
}

@article{CTT100600446,
  author = {Kuniyuki KAKUSHIMA and Kiichi Tachi and Jaeyeol Song and Soshi Sato and Hiroshi Nohira and E. Ikenaga and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film},
  journal = {JOURNAL OF APPLIED PHYSICS},
  year = 2009,
}

@article{CTT100588767,
  author = {KAZUO TSUTSUI and T Matsuda and M Watanabe and Cheng-Guo Jin and 佐々木雄一朗 and Bunji Mizuno and E Ikenaga and Kuniyuki KAKUSHIMA and Ahmet Parhat and T Maruizumi and Hiroshi Nohira and takeo hattori and HIROSHI IWAI},
  title = {Activated Boron and its Concentration Profiles in Heavily Doped Si Studied by Soft X-ray Photoelectron Spectroscopy and Hall Measurements},
  journal = {Journal of Applied Physics},
  year = 2008,
}

@article{CTT100588755,
  author = {Ahmet Parhat and 中川健太郎 and Kuniyuki KAKUSHIMA and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack},
  journal = {Microelectronics Reliability},
  year = 2008,
}

@article{CTT100586827,
  author = {Ahmet Parhat and Nakagawa Kentaro and Kuniyuki KAKUSHIMA and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack},
  journal = {Microelectronics Reliability 48},
  year = 2008,
}

@article{CTT100600433,
  author = {Hiroshi Nohira and T. Yoshida and H. Okamoto and S. Shinagawa and W. Sakai and K. Nakajima and M. Suzuki and K. Kimura and NJ. Aun and Y. Kobayashi and Shun-ichiro OHMI and HIROSHI IWAI and E. Ikenaga and Y. Tanaka and K. Kobayashi and takeo hattori},
  title = {Thermal stability of Gd2O3/Si(100) interfacial transition layer},
  journal = {JOURNAL DE PHYSIQUE IV},
  year = 2006,
}

@inproceedings{CTT100830077,
  author = {Tomoyuki Suzuki and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Hiroshi Nohira and Kuniyuki Kakushima},
  title = {Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100654598,
  author = {Kouhei Akita and Jun Kanehara and Hiroshi Nohira and Y. Izumi and TAKAYUKI MURO and 木下豊彦 and パールハットアヘメト and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
  title = {[517]	Y. Miyata, K. Akita, J. Kanehara, H. Nohira, Y. Izumi, T. Muro, T. Kinoshita, P. Analysis of Boron Doped in Si Fin Structure by Soft X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100831028,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Yuya Suzuki and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654596,
  author = {Jun Kanehara and Yusuke Takei and Youhei Miyata and Hiroshi Nohira and Y. Izumi and TAKAYUKI MURO and 木下豊彦 and パールハットアヘメト and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
  title = {Depth Profiling of As with Various Chemical Bonding States Doped in Si Shallow Junction by Using Soft X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654678,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and 中塚理 and パールハットアヘメト and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100)},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100830548,
  author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori1 and Hiroshi Iwai},
  title = {Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657548,
  author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Y. Izumi and T. Muro and 木下豊彦 and パールハットアヘメト and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
  title = {Soft X-ray Photoelectron Spectroscopy Study of Boron Doped on Top Surfaces and Sidewalls of Si Fin Structures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830559,
  author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
  title = {Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100830554,
  author = {Jun Kanehara and Youhei Miyata and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
  title = {Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628219,
  author = {宮田陽平 and 金原潤 and 難波覚 and 三角元力 and 筒井一生 and 野平博司 and 室隆桂之 and 木下豊彦 and 角嶋邦之 and パールハットアヘメト and 服部健雄 and 岩井洋},
  title = {軟X線光電子分光法を用いたFin構造中の不純物化学結合状態分析},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628213,
  author = {沢尻 侑也 and 山下晃司 and 小松 新 and ダリューシュザデ and 角嶋邦之 and 岩井洋 and 野平博司},
  title = {AR-XPSによる(NH４) ２S処理したIn0.53Ga0.47As表面の化学結合状態の評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628814,
  author = {金原潤 and 宮田陽平 and 秋田洸平 and 筒井一生 and 野平博司 and 室隆桂之 and 木下豊彦 and パールハットアヘメト and 角嶋邦之 and 服部健雄 and 岩井洋},
  title = {Si中に極浅ドープされたAsの軟X線光電子分光による化学結合状態の検出とその深さ方向分布},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654673,
  author = {Hiroshi Nohira and 小松新 and 山下晃司 and Kuniyuki KAKUSHIMA and HIROSHI IWAI and Y. Hioshi and K. Sawano and Y. Shiraki},
  title = {XPS Study on Chemical Bonding States of high-k/high-μ Gate Stacks for Advanced CMOS},
  booktitle = {ECS Transactions},
  year = 2011,
}

@inproceedings{CTT100615527,
  author = {KAZUO TSUTSUI and Masaoki Tanaka and Norifumi Hoshino and Hiroshi Nohira and Kuniyuki KAKUSHIMA and Ahmet Parhat and 佐々木雄一朗 and Bunji Mizuno and T. Muro and T. Kinoshita and takeo hattori and HIROSHI IWAI},
  title = {Soft X-ray Photoelectron Spectroscopy Study of Activation and Deactivation of Impurities in Shallow Junctions},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616060,
  author = {田中正興 and 金原潤 and 宮田陽平 and 角嶋邦之 and パールハットアヘメト and 室隆桂之 and 木下豊彦 and 野平博司 and 筒井一生 and 室田 淳一 and 服部健雄 and 岩井洋},
  title = {Siエピタキシャル層にドープされたボロンの軟X線光電子分光},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613529,
  author = {角嶋邦之 and 小柳友常 and 来山大祐 and 幸田みゆき and 宋在烈 and 佐藤創志 and 川那子高暢 and M. マイマイティ and 舘喜一 and M.K. Bera and パールハットアヘメト and 野平博司 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 山田啓作 and 岩井洋},
  title = {LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御},
  booktitle = {，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）},
  year = 2010,
}

@inproceedings{CTT100607843,
  author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and 来山大祐 and Miyuki Kouda and Jaeyeol Song and Takamasa Kawanago and M. Mamatrishat and Kiichi Tachi and M. K. Bera and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and Keisaku Yamada and HIROSHI IWAI},
  title = {Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100605137,
  author = {KAZUO TSUTSUI and Norifumi Hoshino and Yasumasa Nakagawa and Masaoki Tanaka and Hiroshi Nohira and Kuniyuki KAKUSHIMA and Ahmet Parhat and 佐々木雄一朗 and Bunji Mizuno and takeo hattori and HIROSHI IWAI},
  title = {Depth Profiling of Chemical Bonding States of Impurity Atoms and Their Correlation with Electrical Activity in Si Shallow Junctions},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603767,
  author = {田中正興 and 星野憲文 and 筒井一生 and 野平博司 and 室隆桂之 and 加藤有香子 and 木下豊彦 and パールハットアヘメト and 角嶋邦之 and 服部健雄 and 岩井洋},
  title = {光電子分光により検出したSi中のAsおよびPの化学結合状態の評価},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100630817,
  author = {山下晃司 and 野平博司 and 角嶋邦之 and 岩井洋},
  title = {HfO2/La2O３/In0.53Ga0.47As構造の熱安定性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597770,
  author = {Hiroshi Nohira and Yoichiro Kon and Koji Kitamura and Miyuki Kouda and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx / LaOx/Si and LaOx/CeOx /Si Structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597922,
  author = {Miyuki Kouda and Naoto Umezawa and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and Kenji Shiraishi and 知京豊裕 and Keisaku Yamada and HIROSHI IWAI},
  title = {Charged defects reduction in gate insulator with multivalent materials},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585372,
  author = {Tomoyuki Kurihara and Yohei Nagahama and Daisuke Kobayshi and Hiroki Niikura and Yoshishige Tsuchiya and Hiroshi Mizuta and Hiroshi Nohira and Ken Uchida and Shunri Oda},
  title = {Engineering of Heterostructured Tunnel Barrier for Non-Volatile Memory Applications: Potential of Pr-based Heterostructured Barrier as a Tunneling Oxide},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585303,
  author = {野平博司 and 今陽一郎 and 北村幸司 and 幸田みゆき and 角嶋邦之 and 岩井 洋},
  title = {CeO2 /La2O3/Si(100)構造の熱安定性(2)},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585442,
  author = {星野憲文 and 中川恭成 and 野平博司 and 室 隆桂之 and 加藤 有香子 and 甲斐隆行 and 金成国 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 木下 豊彦 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {光電子分光によるSi中Asの化学結合状態評価},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100830628,
  author = {H. Nohira and Y. Takenaga and K. Kakushima and P. Ahmet and K. Tsutsui and H. Iwai},
  title = {Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100585107,
  author = {中川恭成 and 野平博司 and 酒井一憲 and 横田 知之 and 甲斐 隆行 and 金成国 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 服部健雄 and 筒井一生 and 岩井洋},
  title = {光電子分光によるSi中Asの活性化状態の深さ方向分布評価},
  booktitle = {応用物理学会},
  year = 2008,
}

@inproceedings{CTT100585097,
  author = {野平博司 and 今 陽一郎 and 北村幸司 and 幸田みゆき and 角嶋邦之 and 岩井洋},
  title = {CeO2/La2O3/Si(100)構造の熱安定性},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100830635,
  author = {K. Tsutsui and M. Watanabe and Y. Nakagawa and T. Matsuda and Y. Yoshida and E. Ikenaga and K. Kakushima and P. Ahmet and H. Nohira and T. Maruizumi and A. Ogura and T. Hattori and H. Iwai},
  title = {New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576428,
  author = {北村 幸司 and 舘喜一 and 角嶋邦之 and 野平 博司 and 岩井洋},
  title = {HfLaOx/SiO2/Siの組成分布に及ぼす熱処理の効果},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100600007,
  author = {野平博司 and 白石 貴義 and 高橋 健介 and 柏木 郁未 and 大島 千鶴 and 大見俊一郎 and 岩井洋 and 城森 慎司 and 中嶋 薫 and 鈴木 基史 and 木村 健二 and 服部 健雄},
  title = {極薄希土類酸化膜/Si(100)界面構造（極薄ゲート絶縁膜・シリコン界面の評価技術・解析技術）},
  booktitle = {電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス},
  year = 2003,
}