論文

• "Y. Wu", "H. Hasegawa", "K. Kakushima", "K. Ohmori", "T. Watanabe", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "Y. Kataoka", "K. Natori", "K. Yamada", "H. Iwai". A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability, Microelectronics Reliability, Vol. 54, No. 5, pp. 899-904, May 2014.

国際会議発表 (査読なし・不明)

• H. Hasegawa, Y.Wu, J.Song, K. Kakushima, Y.Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.

学位論文

• A Study on Process and Device Structure for Schottky and Heterojunction Tunnel FETs using Silicide-Silicon interface,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2014/03/26,   
• ショットキー及びヘテロシリサイド・シリコン接合トンネルFETのプロセス及び構造因子に関する研究,  論文要旨,  博士(工学),  東京工業大学,  2014/03/26,   
• A Study on Process and Device Structure for Schottky and Heterojunction Tunnel FETs using Silicide-Silicon interface,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2014/03/26,   

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