論文

• Lv Jianguo, Shizuo Fujita, Toshiyuki Kawaharamura, Hiroyuki Nishinaka, Yudai Kamada, Takayoshi Oshima. Carrier concentration dependence of band gap shift in n -type ZnO:Al films, Journal of Applied Physics, Vol. 101, 083705, Apr. 2007.
• Lv Jianguo, Toshiyuki Kawaharamura, Hiroyuki Nishinaka, Yudai Kamada, Takayoshi Oshima, Shizuo Fujita. ZnO-based thin films synthesized by atmospheric pressure mist chemical vapor deposition, Journal of Crystal Growth, Vol. 299, 1, Feb. 2007.
• Lv Jianguo, Shizuo Fujita, Toshiyuki Kawaharamura, Hiroyuki Nishinaka, Yudai Kamada, Takayoshi Oshima. Carrier concentration induced band-gap shift in Al-doped Zn_1-xMg_xO thin films, Applied Physics Letters, Vol. 89, 26, Dec. 2006.

国際会議発表 (査読有り)

• Daisuke Shinohara, Hiroyuki Nishinaka, Takayoshi Oshima, Shizuo Fujita. Epitaxial growth of wide bandgap semiconductor: α-Ga₂O₃ thin film on α-AlGa₂O₃ by ultrasonic spray chemical vapor deposition, 14th International Workshop on Oxide Electronics, PII-54, Oct. 2007.

国内会議発表 (査読なし・不明)

• 篠原大輔, 西中浩之, 大島孝仁, 騎馬啓嗣, 鎌田雄大, 川原村敏幸, 藤田静雄. ミストCVD法によるsapphire基板上α-Ga₂O₃ 薄膜の成長, 2008年春季第55回応用物理学会関係連合講演会, 28a-W-2, Mar. 2008.

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